JPH1012577A - Treating gaas mirror surface wafer - Google Patents
Treating gaas mirror surface waferInfo
- Publication number
- JPH1012577A JPH1012577A JP16481596A JP16481596A JPH1012577A JP H1012577 A JPH1012577 A JP H1012577A JP 16481596 A JP16481596 A JP 16481596A JP 16481596 A JP16481596 A JP 16481596A JP H1012577 A JPH1012577 A JP H1012577A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning
- mirror
- oxide film
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＧａＡｓ鏡面ウェハ
の処理方法に係り、特に長期保管したＧａＡｓ鏡面ウェ
ハの品質を改善するのに好適な処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a GaAs mirror-finished wafer, and more particularly to a method suitable for improving the quality of a long-term stored GaAs mirror-finished wafer.
【０００２】[0002]
【従来の技術】ＧａＡｓウェハは、一般的には、ラッピ
ング、エッチング、ポリッシング加工の後、検査、洗浄
を施され、鏡面ウェハとして完成する。この完成された
ＧａＡｓ鏡面ウェハは、顧客要求に応じて種々の容器に
収納されて出荷される。このＧａＡｓ鏡面ウェハの表面
は活性であり、長期間保管したものはその収納された容
器の影響や、保管場所の雰囲気の影響を受け、鏡面品質
は劣化する。2. Description of the Related Art Generally, a GaAs wafer is inspected and cleaned after lapping, etching and polishing, and is completed as a mirror-finished wafer. The completed GaAs mirror-finished wafer is shipped in various containers according to customer requirements. The surface of the GaAs mirror surface wafer is active, and the one stored for a long period of time is affected by the container in which the wafer is stored and the atmosphere of the storage place, and the mirror surface quality is degraded.
【０００３】この様な長期保管により鏡面品質が劣化し
た鏡面ウェハは顧客でＭＯＶＰＥやＭＢＥ等のエピタキ
シャル成長を行ったとき、または、プロセス投入前の前
処理として化学エッチングを行ったときに、ウェハ表面
にくもりや面荒れ等を発生させる場合がある。[0003] Such mirror-polished wafers, whose mirror surface quality has deteriorated due to long-term storage, can be deposited on the wafer surface when the customer performs epitaxial growth such as MOVPE or MBE, or when chemical etching is performed as a pre-treatment before the process introduction. Clouding and surface roughness may occur.
【０００４】このため、従来は鏡面ウェハとして完成し
てから保管が長期間にわたるものは、再加工を行い、そ
の表面を除去することにより、表面品質を確保し顧客へ
出荷していた。保管期間がどのくらい経過したら再加工
を必要とするかは、保管場所の雰囲気などにより変る
が、大気雰囲気保管では約１か月、Ｎ2 雰囲気保管では
約２か月を目途に再加工していた。[0004] For this reason, conventionally, mirror wafers that have been stored for a long period of time after being completed have been reworked and their surfaces removed to ensure surface quality and be shipped to customers. How long the storage period must elapse before reworking depends on the atmosphere of the storage place, etc., but it was about one month in air atmosphere storage and about two months in N 2 atmosphere storage. .
【０００５】[0005]
【発明が解決しようとする課題】しかし、上述した従来
の再加工方法では、図３に示すように、ウェハ貼付→ポ
リッシング→ウェハ取外し→検査→洗浄と多くの工程を
経て再加工するため、効率が悪く、しかも一度完成した
ウェハであるにも関わらず再度加工するため、歩留りが
低下するという問題があった。特に、表面品質を保管前
の初期表面品質と同等にするために、ポリッシング加工
により表面を数μｍ単位で除去する必要があるが、そう
するとスクラッチ等の不良が発生する可能性があるた
め、大幅に歩留りが低下するという問題があった。However, in the above-described conventional reworking method, as shown in FIG. 3, since reworking is performed through many steps of wafer attachment → polishing → wafer removal → inspection → cleaning, the efficiency is reduced. However, there is a problem that the yield is reduced because the wafer is processed again even though it is a completed wafer. In particular, in order to make the surface quality equal to the initial surface quality before storage, it is necessary to remove the surface in units of several μm by polishing, but if this occurs, defects such as scratches may occur, There was a problem that the yield was reduced.
【０００６】本発明の目的は、上述した従来技術の問題
点を解消して、再加工することなく、保管後のＧａＡｓ
鏡面ウェハを保管前の初期表面品質に簡単かつ高歩留り
に改善することが可能なＧａＡｓ鏡面ウェハの処理方法
を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the prior art, and to store GaAs after storage without reprocessing.
It is an object of the present invention to provide a method for processing a GaAs mirror-polished wafer, which can easily improve the mirror-polished wafer to an initial surface quality before storage and a high yield.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の発明
は、保管後のＧａＡｓ鏡面ウェハにエピタキシャル成長
などのウェハ処理工程を施すに際して、前記ＧａＡｓ鏡
面ウェハの表面を強制酸化して強制酸化膜を形成した
後、前記強制酸化膜を酸またはアルカリによって除去す
ることにより、保管期間中に鏡面の劣化が生じている層
を同時に除去するようにしたことを特徴とするＧａＡｓ
鏡面ウェハの処理方法である。According to a first aspect of the present invention, when a wafer processing step such as epitaxial growth is performed on a GaAs mirror-finished wafer after storage, the surface of the GaAs mirror-finished wafer is forcibly oxidized to form a forced oxide film. After the formation, the forced oxide film is removed with an acid or an alkali, thereby simultaneously removing layers whose mirror surfaces have deteriorated during the storage period.
This is a method for processing a mirror wafer.
【０００８】保管により鏡面の劣化が生じている層は通
常自然酸化膜でできている。ＧａＡｓ鏡面ウェハの表面
に付く自然酸化膜は、後述するように１５オングストロ
ーム前後程度の厚さしかないため、この自然酸化膜のみ
を除去することは技術的に困難である。このため保管に
より付いた自然酸化膜のみを取り除くには、従来のよう
に再加工するしか方法がない。しかし酸化膜層の合計膜
厚を厚くしてやれば除去が容易になる。この点で本発明
のように、保管後のＧａＡｓ鏡面ウェハの表面を強制酸
化させた後に、その酸化膜を除去することにより、保管
により表面についた自然酸化膜を同時に除去するように
すれば、簡単かつ高歩留りで、鏡面の劣化が生じている
層を除去することができ、その結果、ＧａＡｓ鏡面ウェ
ハを完成した直後のウェハと同等の鏡面品質を得ること
ができる。The layer in which the mirror surface has deteriorated due to storage is usually made of a natural oxide film. Since the natural oxide film on the surface of the GaAs mirror-finished wafer has a thickness of only about 15 angstroms as described later, it is technically difficult to remove only the natural oxide film. For this reason, the only way to remove the natural oxide film deposited by storage is to rework as in the prior art. However, if the total thickness of the oxide film layers is increased, the removal becomes easier. In this regard, as in the present invention, if the surface of the GaAs mirror-finished wafer after storage is forcibly oxidized and the oxide film is removed, the natural oxide film attached to the surface by storage is removed at the same time. With a simple and high yield, it is possible to remove the layer in which the mirror surface has been degraded, and as a result, it is possible to obtain a mirror surface quality equivalent to that of a wafer immediately after a GaAs mirror surface wafer is completed.
【０００９】請求項２に記載の発明は、ＧａＡｓ鏡面ウ
ェハの表面に形成する強制酸化膜の厚さを２０オングス
トローム以上とした請求項１に記載の処理方法である。
保管が長期にわたった場合に最大２０オングストローム
厚まで自然酸化膜が付く可能性があるが、膜の厚さが２
０オングストローム以上となるように強制酸化膜を形成
するようにした場合には、最大厚の自然酸化膜が付いて
も、それを除去することができる。The invention according to claim 2 is the processing method according to claim 1, wherein the thickness of the forced oxide film formed on the surface of the GaAs mirror-finished wafer is 20 Å or more.
When stored for a long period of time, a native oxide film may be formed up to a maximum thickness of 20 Å,
In the case where the forced oxide film is formed so as to have a thickness of 0 Å or more, even if the natural oxide film having the maximum thickness is formed, it can be removed.
【００１０】請求項３に記載の発明は、ＵＶオゾンまた
はオゾン含有の超純水を用いて強制酸化膜を形成するよ
うにした請求項１または２に記載のＧａＡｓ鏡面ウェハ
の処理方法である。ＵＶオゾンまたはオゾン含有の超純
水を用いて強制酸化膜を形成すると、その形成が容易に
なる。According to a third aspect of the present invention, there is provided the method for processing a GaAs mirror surface wafer according to the first or second aspect, wherein the forced oxide film is formed using UV ozone or ultrapure water containing ozone. The formation of the forced oxide film using UV ozone or ultrapure water containing ozone facilitates the formation.
【００１１】請求項４に記載の発明は、有機洗浄とアル
カリ液による洗浄とを組合わせるか、またはアルカリ液
のみによる洗浄により強制酸化膜を除去するようにした
請求項１ないし３のいずれかに記載のＧａＡｓ鏡面ウェ
ハの処理方法である。The invention according to claim 4 is characterized in that the forced oxide film is removed by combining the organic cleaning with the cleaning with an alkaline solution or by cleaning only with an alkaline solution. It is a processing method of the GaAs mirror surface wafer described in the above.
【００１２】請求項５に記載の発明は、有機洗浄と酸に
よる洗浄とを組合わせるか、または酸のみによる洗浄に
より強制酸化膜を除去するようにした請求項１ないし３
のいずれかに記載のＧａＡｓ鏡面ウェハの処理方法であ
る。According to a fifth aspect of the present invention, the forced oxide film is removed by combining the organic cleaning and the cleaning with an acid, or by cleaning only with an acid.
5. The method for processing a GaAs mirror-finished wafer according to any one of the above.
【００１３】請求項４または５に記載の発明のように、
ＧａＡｓ鏡面ウェハで一般的に用いられている洗浄法を
利用して酸化膜を除去するようにしたので、設備費を安
価にすることができる。According to the invention described in claim 4 or 5,
Since the oxide film is removed by using a cleaning method generally used for a GaAs mirror-finished wafer, the equipment cost can be reduced.
【００１４】[0014]
【発明の実施の形態】以下に本発明のＧａＡｓ鏡面ウェ
ハの処理方法の実施の形態を図面を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for processing a GaAs mirror-finished wafer according to the present invention will be described below with reference to the drawings.
【００１５】本実施の形態は、保管後のＧａＡｓ鏡面ウ
ェハにエピタキシャル成長などのウェハ処理工程を施す
に際して、図１に示すように、ＧａＡｓ鏡面ウェハの表
面を強制酸化して、保管期間中に鏡面の劣化が生じてい
る層の上に強制酸化膜を形成し、この強制酸化膜を形成
したＧａＡｓ鏡面ウェハを洗浄して、これらの強制酸化
膜と劣化が生じている層とを酸またはアルカリによって
同時に除去するようにしたものである。In this embodiment, when a wafer processing step such as epitaxial growth is performed on a GaAs mirror-finished wafer after storage, the surface of the GaAs mirror-finished wafer is forcibly oxidized as shown in FIG. A forced oxide film is formed on the degraded layer, the GaAs mirror surface wafer on which the forced oxide film has been formed is cleaned, and the forced oxide film and the degraded layer are simultaneously treated with acid or alkali. It is intended to be removed.
【００１６】本実施の形態によれば、保管により鏡面の
劣化が生じている層を、強制酸化膜の除去に伴って除去
するようにしたので、ＧａＡｓウェハを長期保管前の初
期の表面品質と同等の品質に改善することができる。According to the present embodiment, the layer whose mirror surface has been deteriorated due to storage is removed along with the removal of the forced oxide film, so that the GaAs wafer has the same initial surface quality as before the long-term storage. It can be improved to the same quality.
【００１７】また、従来例の再加工プロセスを示す図３
と比較すれば分かるように、本発明のプロセスは大幅に
簡略化されているため効率が極めて良好となる。更に本
発明のプロセスでは表面層の除去量は強制酸化膜の厚み
分に鏡面の劣化が生じている劣化層を加えた分のみであ
り、ＧａＡｓ自体を削り取るわけではないので、ＧａＡ
ｓ鏡面ウェハに要求される加工精度、例えばＴＴＶ（To
tal Thickness Variation ）やＬＴＶ（Local Thicknes
s Variation ）に変化はない。また、本実施の形態では
ポリッシング加工を行わないので、ポリッシング加工で
生じるようなスクラッチ等の不良の発生は皆無であり、
大幅に歩留りが向上する。FIG. 3 shows a conventional reworking process.
As can be seen from the comparison, the process of the present invention is greatly simplified, resulting in very good efficiency. Further, in the process of the present invention, the removal amount of the surface layer is only the sum of the thickness of the forced oxide film and the degraded layer in which the mirror surface is degraded, and the GaAs itself is not scraped off.
Processing accuracy required for s-mirror wafers, such as TTV (To
tal Thickness Variation) and LTV (Local Thicknes)
s Variation) has not changed. Further, in this embodiment, since the polishing is not performed, there is no occurrence of defects such as scratches caused by the polishing,
The yield is greatly improved.
【００１８】[0018]
【実施例】本実施例では、φ３”引上法ＧａＡｓ鏡面ウ
ェハを試料として使用した。ラッピング、エッチング、
ポリッシング加工の後、検査、洗浄を施して鏡面に完成
された上述のＧａＡｓ鏡面ウェハを１．５か月間大気雰
囲気のクリーン保管庫内に保管した。この長期保管した
ＧａＡｓ鏡面ウェハを保管庫から取り出して、その表面
にＵＶオゾン処理を施して３０オングストローム厚の強
制酸化膜を付けた。この膜厚はエリプソメーターで測定
した。通常ＧａＡｓ鏡面ウェハの完成直後に表面に付く
自然酸化膜の厚さは８〜１２オングストロームであり、
長期保管品では１５オングストローム前後である。EXAMPLE In this example, a φ3 ″ pull-up GaAs mirror surface wafer was used as a sample.
After the polishing process, the above-mentioned mirror-finished GaAs wafer having been mirror-finished by inspection and cleaning was stored in a clean storage room in an air atmosphere for 1.5 months. The GaAs mirror-finished wafer stored for a long time was taken out of the storage and subjected to UV ozone treatment to form a 30 Å thick forced oxide film on the surface. This film thickness was measured with an ellipsometer. Normally, the thickness of the natural oxide film attached to the surface immediately after the completion of the GaAs mirror surface wafer is 8 to 12 Å,
For long-term storage, it is around 15 angstroms.
【００１９】この強制酸化膜を付けたＧａＡｓ鏡面ウェ
ハに、図２に示すＧａＡｓ鏡面ウェハで一般的に用いら
れている洗浄を施した。すなわち、有機洗浄→純水リン
ス→アルカリ洗浄→純水リンス→乾燥のプロセスを経て
酸化膜を除去した。洗浄後の酸化膜厚は１０オングスト
ロームであり、これはＧａＡｓ鏡面ウェハの完成直後の
自然酸化膜と同じレベルであった。The GaAs mirror surface wafer provided with the forced oxide film was subjected to cleaning generally used for the GaAs mirror surface wafer shown in FIG. That is, the oxide film was removed through a process of organic washing → pure water rinsing → alkali washing → pure water rinsing → drying. The oxide film thickness after cleaning was 10 angstroms, which was the same level as the natural oxide film immediately after completion of the GaAs mirror-finished wafer.
【００２０】更に、このＧａＡｓ鏡面ウェハに無処理で
ＭＯＶＰＥエピタキシャル成長を施したところ、くもり
や面荒れ等の異常がなく、エピタキシャル層の特性も全
く問題のないレベルのものであった。また、顧客でプロ
セス投入前に行われる前処理であるアンモニア系エッチ
ング及び硫酸系のエッチングを行ったところ、くもり、
面荒れ等のない正常な鏡面を得た。Further, when the GaAs mirror surface wafer was subjected to MOVPE epitaxial growth without processing, no abnormalities such as clouding and surface roughness were found, and the characteristics of the epitaxial layer were at a level with no problem at all. In addition, when the customer performed ammonia-based etching and sulfuric acid-based etching, which are pre-treatments performed before the process was introduced,
A normal mirror surface without surface roughness was obtained.
【００２１】なお、上述した実施例では強制酸化の方法
としては、ＵＶオゾン処理を用いたが、オゾン含有の超
純水で処理するようにしてもよい。この場合、図２の洗
浄プロセスにおいて有機洗浄の前で処理するか、もしく
は有機洗浄後の純水リンスのときに処理するとよい。In the above embodiment, UV ozone treatment is used as a method of forced oxidation, but treatment with ultrapure water containing ozone may be used. In this case, the treatment may be performed before the organic cleaning in the cleaning process of FIG. 2 or at the time of pure water rinsing after the organic cleaning.
【００２２】また、図３における洗浄プロセスの有機洗
浄は省略することも可能である。さらにアルカリ洗浄
で、酸（例えばフッ酸、硫酸）と過酸化水素水と純水と
の混合液等で洗浄してもよい。The organic cleaning in the cleaning process shown in FIG. 3 can be omitted. Further, in alkaline washing, washing may be performed with a mixed solution of an acid (for example, hydrofluoric acid, sulfuric acid), a hydrogen peroxide solution and pure water, or the like.
【００２３】[0023]
【発明の効果】本発明によれば、ＧａＡｓ鏡面ウェハの
表面を強制酸化した後、その強制酸化膜を除去すること
により、保管により鏡面の劣化が生じている層を同時に
除去するようにしたので、従来の再加工方法と比べて、
きわめて簡単かつ高歩留で、保管後のＧａＡｓ鏡面ウェ
ハを保管前の初期の表面品質と同等の品質に改善するこ
とができる。According to the present invention, after the surface of the GaAs mirror-finished wafer is forcibly oxidized, the forcibly oxidized film is removed, so that the layer whose mirror surface has deteriorated due to storage is simultaneously removed. , Compared to traditional rework methods,
With very simple and high yield, the GaAs mirror-finished wafer after storage can be improved to the same quality as the initial surface quality before storage.
【図１】本発明のＧａＡｓ鏡面ウェハの処理方法の実施
の形態を示す工程図である。FIG. 1 is a process chart showing an embodiment of a method for processing a GaAs mirror-finished wafer of the present invention.
【図２】本実施の形態の洗浄部分の詳細な工程図であ
る。FIG. 2 is a detailed process diagram of a cleaning portion of the embodiment.
【図３】従来のＧａＡｓ鏡面ウェハの再加工方法を示す
工程図である。FIG. 3 is a process chart showing a conventional method of reworking a mirror-finished GaAs wafer.
Claims (5)
ャル成長などのウェハ処理工程を施すに際して、前記Ｇ
ａＡｓ鏡面ウェハの表面を強制酸化して強制酸化膜を形
成した後、前記強制酸化膜を酸またはアルカリによって
除去することにより、保管期間中に鏡面の劣化が生じて
いる層を同時に除去するようにしたことを特徴とするＧ
ａＡｓ鏡面ウェハの処理方法。When performing a wafer processing step such as epitaxial growth on a mirror-finished GaAs wafer,
After forming the forced oxide film by forcibly oxidizing the surface of the aAs mirror surface wafer, the forced oxide film is removed with an acid or an alkali, so that the layer whose mirror surface is deteriorated during the storage period is simultaneously removed. G characterized by doing
aAs mirror wafer processing method.
強制酸化膜の厚さを２０オングストローム以上とした請
求項１に記載の処理方法。2. The processing method according to claim 1, wherein the thickness of the forced oxide film formed on the surface of the GaAs mirror surface wafer is 20 Å or more.
ン含有の超純水を用いて形成するようにした請求項１ま
たは２に記載のＧａＡｓ鏡面ウェハの処理方法。3. A method for processing a GaAs mirror-finished wafer according to claim 1, wherein said forced oxide film is formed using UV ozone or ultrapure water containing ozone.
による洗浄との組合わせ、またはアルカリ液のみによる
洗浄により除去するようにした請求項１ないし３のいず
れかに記載のＧａＡｓ鏡面ウェハの処理方法。4. The GaAs mirror surface wafer according to claim 1, wherein said forced oxide film is removed by a combination of organic cleaning and cleaning with an alkaline solution, or by cleaning with an alkaline solution alone. Processing method.
浄との組合わせ、または酸のみによる洗浄により除去す
るようにした請求項１ないし３のいずれかに記載のＧａ
Ａｓ鏡面ウェハの処理方法。5. The Ga according to claim 1, wherein the natural oxide film is removed by a combination of organic cleaning and cleaning with an acid, or by cleaning with an acid alone.
As mirror wafer processing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16481596A JPH1012577A (en) | 1996-06-25 | 1996-06-25 | Treating gaas mirror surface wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16481596A JPH1012577A (en) | 1996-06-25 | 1996-06-25 | Treating gaas mirror surface wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1012577A true JPH1012577A (en) | 1998-01-16 |
Family
ID=15800455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16481596A Pending JPH1012577A (en) | 1996-06-25 | 1996-06-25 | Treating gaas mirror surface wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1012577A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10460924B2 (en) | 2013-02-15 | 2019-10-29 | Freiberger Compound Materials Gmbh | Process for producing a gallium arsenide substrate which includes marangoni drying |
| WO2021176750A1 (en) | 2020-03-02 | 2021-09-10 | 住友電気工業株式会社 | Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate |
| JP7327714B1 (en) * | 2022-09-16 | 2023-08-16 | 住友電気工業株式会社 | Gallium arsenide single crystal substrate and manufacturing method thereof |
-
1996
- 1996-06-25 JP JP16481596A patent/JPH1012577A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10460924B2 (en) | 2013-02-15 | 2019-10-29 | Freiberger Compound Materials Gmbh | Process for producing a gallium arsenide substrate which includes marangoni drying |
| US11170989B2 (en) | 2013-02-15 | 2021-11-09 | Freiberger Compound Materials Gmbh | Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity |
| WO2021176750A1 (en) | 2020-03-02 | 2021-09-10 | 住友電気工業株式会社 | Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate |
| CN115087767A (en) * | 2020-03-02 | 2022-09-20 | 住友电气工业株式会社 | Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate |
| US11891720B2 (en) | 2020-03-02 | 2024-02-06 | Sumitomo Electric Industries, Ltd. | Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate |
| CN115087767B (en) * | 2020-03-02 | 2024-02-20 | 住友电气工业株式会社 | Gallium arsenide single crystal substrate and method for manufacturing gallium arsenide single crystal substrate |
| JP7327714B1 (en) * | 2022-09-16 | 2023-08-16 | 住友電気工業株式会社 | Gallium arsenide single crystal substrate and manufacturing method thereof |
| WO2024057533A1 (en) * | 2022-09-16 | 2024-03-21 | 住友電気工業株式会社 | Gallium arsenide single crystal substrate and method for producing same |
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