JPH10116778A - Scanning aligner - Google Patents
Scanning alignerInfo
- Publication number
- JPH10116778A JPH10116778A JP8285917A JP28591796A JPH10116778A JP H10116778 A JPH10116778 A JP H10116778A JP 8285917 A JP8285917 A JP 8285917A JP 28591796 A JP28591796 A JP 28591796A JP H10116778 A JPH10116778 A JP H10116778A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- pulse
- intensity
- scanning
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、スキャン露光装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure apparatus.
【０００２】[0002]
【従来の技術】スキャン露光装置には各種のものがある
が、半導体製造用のものは、ウエハとレチクルをそれぞ
れ移動可能なテーブルに載せて同時に駆動することによ
り、露光光を投影レンズまたはミラーを介して走査しレ
チクルの像をウエハに焼き付ける。最近この種の装置で
も、半導体プロセスの微細化に伴って、露光光源として
より波長の短いエキシマレーザなどを採用するものがあ
る。周知のとおり、エキシマレーザはパルス状に発光す
ることが特徴である。2. Description of the Related Art There are various types of scan exposure apparatuses. For a semiconductor exposure apparatus, a wafer and a reticle are placed on a movable table and driven simultaneously to expose exposure light to a projection lens or a mirror. Through which the image of the reticle is printed on the wafer. Recently, even with this type of apparatus, an excimer laser having a shorter wavelength or the like is used as an exposure light source in accordance with miniaturization of a semiconductor process. As is well known, an excimer laser is characterized by emitting light in a pulse.
【０００３】[0003]
【発明が解決しようとする課題】近年、露光装置用のエ
キシマレーザは種々の改良がなされ、性能および信頼性
が上がってきている。その一方で、大パワー化や繰り返
し周波数の高速化に伴って、発光パルス強度が急激に落
ちるパルス欠陥や発振指令に対してミスファイヤを起こ
すパルス欠落などの現象も報告されている。In recent years, excimer lasers for exposure apparatuses have been variously improved, and their performance and reliability have been improved. On the other hand, phenomena such as a pulse defect in which the emission pulse intensity sharply decreases and a pulse drop causing misfire in response to an oscillation command are reported with an increase in power and an increase in repetition frequency.
【０００４】ところで、こうしたパルス発光型の光源を
用いたスキャン露光装置の露光制御アルゴリズムは、光
源の発光パルス強度の変動に対して、そのパルス強度そ
のものを変化させて制御したり、スキャンスピードや発
光周波数を変化させて制御し露光むらを抑えている。し
かしながら、先述したようなパルス欠陥やパルス欠落な
ど、発光強度の急激かつ大幅な変動に対して必ずしも有
効に機能しない場合がある。An exposure control algorithm of a scan exposure apparatus using such a pulsed light source controls the variation of the light emission pulse intensity of the light source by changing the pulse intensity itself, or controls the scan speed or light emission. The frequency is changed to control to reduce exposure unevenness. However, it may not always function effectively against sudden and large fluctuations in light emission intensity, such as a pulse defect or a missing pulse as described above.
【０００５】本発明は、このような急激かつ大幅なパル
ス強度変化に対しても有効に照度むらを抑える手段を提
供することを目的とする。An object of the present invention is to provide means for effectively suppressing illuminance unevenness even in such a rapid and large change in pulse intensity.
【０００６】[0006]
【課題を解決するための手段および作用】上記目的を達
成するために本発明は、露光パルスの強度をモニタする
露光パルスモニタ手段と、該モニタ手段によって得られ
た露光パルスによる露光量を記憶する露光パルス記憶手
段と、該露光パルス発光時の装置各部の走査位置を記憶
する位置記憶手段とを有することを特徴とし、それらを
用いて露光むらを補正するための補正露光を行なうこと
を可能にしている。In order to achieve the above object, the present invention provides an exposure pulse monitoring means for monitoring the intensity of an exposure pulse, and stores an exposure amount by the exposure pulse obtained by the monitoring means. An exposure pulse storage means, and a position storage means for storing a scanning position of each unit of the apparatus at the time of emission of the exposure pulse, wherein correction exposure for correcting exposure unevenness can be performed using the exposure pulse storage means. ing.
【０００７】本発明の好ましい実施例においては、前記
の補正露光を自動的に行なう、補正露光手段を有してい
る。この補正露光手段は、前記露光パルスモニタ手段に
よって得られた露光パルスによる露光量が、ある量より
少ない場合、すなわち過少露光の場合、露光のための走
査が終了した後に、該過少露光の露光パルス発光時の装
置各部の走査位置を前記位置記憶手段から読み出して、
当該位置に装置各部を駆動して、補正露光を行なう。こ
の場合、前記補正露光手段は、前記過少露光の露光パル
スおよびその前後のパルス列による露光量を前記露光パ
ルス記憶手段から読み出して、最適な補正露光のための
露光量を算出するための演算手段を備え、該演算手段に
よって算出された値に基づいて前記補正露光を行なう。
また、前記走査露光中は、前記露光パルスモニタ手段に
よって得られた露光パルスによる露光量が、ある量より
少ない場合、すなわち過少露光の場合でも、その過少露
光であったパルス発光をその露光過程において正常とみ
なしうる量のパルス強度があったものとして、以後の露
光制御を実施する。In a preferred embodiment of the present invention, a correction exposure means for automatically performing the correction exposure is provided. When the exposure amount by the exposure pulse obtained by the exposure pulse monitoring unit is smaller than a certain amount, that is, in the case of underexposure, the exposure pulse of the underexposure is completed after the scanning for exposure is completed. Reading the scanning position of each part of the device at the time of light emission from the position storage means,
Each part of the apparatus is driven to the position to perform correction exposure. In this case, the correction exposure unit reads out the exposure amount of the underexposure exposure pulse and the pulse train before and after the underexposure from the exposure pulse storage unit, and calculates a calculation unit for calculating an exposure amount for optimal correction exposure. And performing the correction exposure based on the value calculated by the calculation means.
In addition, during the scanning exposure, when the exposure amount by the exposure pulse obtained by the exposure pulse monitoring means is less than a certain amount, that is, even in the case of underexposure, the underexposure pulse emission is performed in the exposure process. Exposure control is performed assuming that there is a pulse intensity of an amount that can be regarded as normal.
【０００８】[0008]
（第１の実施例）図１は、本発明の一実施例に係るスキ
ャン露光装置のブロック構成を示す。同図において、１
はスキャン露光装置全体を制御する主制御部、２は露光
領域を制限するための露光マスクを制御する露光マスク
制御システム、３はウエハに転写されるパターンが描画
されているレチクルの走査のためのレチクルステージを
制御するレチクル走査制御システム、４は該レチクル上
の転写パターンの像面にウエハの露光面が一致するよう
にウエハ姿勢を合わせるためウエハステージを制御する
ウエハ姿勢制御システム、５はウエハを走査するための
Ｘ−Ｙステージを制御するウエハ走査制御システム、６
は露光条件を満足するように光源であるエキシマレーザ
の発光強度、発光周波数および発光タイミング等を制御
する露光制御システム、７は露光パルスの発光強度をモ
ニタするパルス強度モニタ、８は該パルス強度モニタ７
のデータを記憶するための露光パルス記憶部、９は露光
パルス発光毎の露光マスク、レチクルステージ、ウエハ
ステージおよびＸ−Ｙステージ等の位置情報を記憶する
ための露光位置記憶部、１０は前記露光パルス記憶部８
および露光位置記憶部１０の情報を読み出して補正露光
のための処理を行ない、主制御部に補正露光を行なわせ
るための補正露光制御手段である。(First Embodiment) FIG. 1 shows a block configuration of a scan exposure apparatus according to one embodiment of the present invention. In the figure, 1
Is a main control unit for controlling the entire scanning exposure apparatus, 2 is an exposure mask control system for controlling an exposure mask for limiting an exposure area, and 3 is for scanning a reticle on which a pattern to be transferred to a wafer is drawn. A reticle scanning control system for controlling the reticle stage; 4, a wafer attitude control system for controlling the wafer stage to adjust the wafer attitude so that the exposure surface of the wafer coincides with the image plane of the transfer pattern on the reticle; Wafer scanning control system for controlling XY stage for scanning, 6
Is an exposure control system for controlling the emission intensity, emission frequency and emission timing of an excimer laser as a light source so as to satisfy exposure conditions, 7 is a pulse intensity monitor for monitoring the emission intensity of an exposure pulse, and 8 is the pulse intensity monitor. 7
An exposure pulse storage unit 9 for storing data of an exposure mask, a reticle stage, a wafer stage, and an XY stage for each exposure pulse emission; Pulse storage unit 8
And correction exposure control means for reading out information from the exposure position storage unit 10 and performing processing for correction exposure, and causing the main control unit to perform correction exposure.
【０００９】これらの構成で、主制御部１がスキャン露
光指令を、露光マスク制御システム２、レチクル走査制
御システム３、ウエハ姿勢制御システム４、ウエハ走査
制御システム５および露光制御システム６にそれぞれ出
力すると、一連のスキャン露光動作が開始される。露光
中はパルス強度モニタ７の出力をモニタしながら露光ア
ルゴリズムにしたがって、露光パルス強度等を変化させ
て露光を実行する。この際、各露光パルス発光時の露光
パルス強度が露光パルス記憶部８に、前記露光マスクの
位置、前記レチクルステージの位置、前記ウエハステー
ジの姿勢および前記Ｘ−Ｙステージの位置等が露光位置
記憶部９に記憶される。With these configurations, when the main control unit 1 outputs a scan exposure command to the exposure mask control system 2, the reticle scan control system 3, the wafer attitude control system 4, the wafer scan control system 5, and the exposure control system 6, respectively. , A series of scan exposure operations is started. During the exposure, the exposure is executed by changing the exposure pulse intensity and the like according to the exposure algorithm while monitoring the output of the pulse intensity monitor 7. At this time, the exposure pulse intensity at the time of emission of each exposure pulse is stored in the exposure pulse storage unit 8, and the position of the exposure mask, the position of the reticle stage, the attitude of the wafer stage, the position of the XY stage, and the like are stored in the exposure position. Stored in the unit 9.
【００１０】スキャン露光中のウエハに照射される露光
パルス列を模式的に表わしたものが図２である。通常の
露光では同図のごとく、強度がほぼ揃った露光パルス列
がウエハ上にほぼ等間隔で並んだように露光され、図３
に示すようにその積算値は、ウエハ上の各点で露光量が
等しくなる、すなわち露光むらのない状態で露光されて
いる。図４は、スキャン露光の途上で、露光パルスが１
つだけ抜けた場合を表わす図である。一般的な露光アル
ゴリズムでは、当該露光パルス以前の露光パルス列のパ
ルス強度等から当該露光パルスのパルス強度を決定して
いるため、同図に見られるように欠落の影響を補正する
ために、露光パルス欠落直後の露光パルスはその強度が
増加している。さらにその次の露光パルスは前露光パル
スの強度が大きかったためその影響を受けて、そのパル
ス強度は逆に小さくなっている。図５はこの場合の露光
パルスの積算値を表わしたものである。同図からわかる
ように、露光パルス欠落の影響で露光むらが発生してい
るのがわかる。このように走査露光中に露光パルスが欠
落した場合には、走査露光中の今までの露光パルス列の
パルス強度等から次の露光パルスのパルス強度を決定す
る従来の露光量制御方式では露光むらの補正はできず、
むしろ露光むらが増加する場合もある。この理由から、
露光パルス欠落のように、本来露光パルスに期待される
強度が、ある値以下であった場合に露光を停止する装置
もある。FIG. 2 schematically shows an exposure pulse train applied to a wafer during scan exposure. In the normal exposure, as shown in the figure, the exposure pulse trains having almost the same intensity are exposed so as to be arranged at substantially equal intervals on the wafer.
As shown in the above, the integrated value has the same exposure amount at each point on the wafer, that is, the exposure is performed without exposure unevenness. FIG. 4 shows that the exposure pulse is 1 during the scanning exposure.
It is a figure showing the case where only one missing. In the general exposure algorithm, since the pulse intensity of the exposure pulse is determined from the pulse intensity of the exposure pulse train before the exposure pulse, etc., as shown in FIG. The intensity of the exposure pulse immediately after the drop is increased. Further, the intensity of the pre-exposure pulse of the next exposure pulse is large, and the intensity of the pre-exposure pulse is conversely reduced. FIG. 5 shows the integrated value of the exposure pulse in this case. As can be seen from the figure, it can be seen that uneven exposure has occurred due to the effect of the lack of the exposure pulse. In the case where the exposure pulse is lost during the scanning exposure as described above, the conventional exposure amount control method of determining the pulse intensity of the next exposure pulse from the pulse intensity of the previous exposure pulse train during the scanning exposure, etc. Correction is not possible,
Rather, exposure unevenness may increase. For this reason,
There is also an apparatus that stops exposure when the intensity originally expected for an exposure pulse is equal to or less than a certain value, such as when the exposure pulse is missing.
【００１１】この露光むらの問題を解決するために本実
施例では、先ず、露光パルスに極度の異常があった場
合、すなわち露光パルスのパルス強度がある値以下であ
った場合、露光アルゴリズムに対して露光アルゴリズム
が指定したとおりの露光パルスが得られたものとして、
以後の露光を実行するようにしている。なお露光パルス
の強度は前記パルス強度モニタ７で逐次モニタしてい
る。図６および図７は先述のように露光パルス欠落が発
生しかつ、露光アルゴリズムが欠落した露光パルスが正
常であったものとして一連の露光を終了した様子を表わ
している。この状態では、図７からわかるようにウエハ
のある部分に過少露光部分が存在している。そこでこの
一連の露光を終了した後に、補正露光制御手段１０は、
パルス強度記憶部８から、異常を起こした露光パルスと
その前後の露光パルス列を読み出し、さらにそれらに対
応した露光マスク位置、レチクルステージ位置、ウエハ
ステージ姿勢およびＸ−Ｙステージ位置等のデータを露
光位置記憶部９から読み出す。これらのデータから図７
の積算値を補正するための最適な補正露光パルス強度
と、最適な補正露光位置を算出して主制御部１にそれら
のデータを送出する。主制御部１はこのデータを受け
て、適切なタイミングで補正露光動作に入る。補正露光
は、補正露光制御手段１０から受け取ったデータをもと
に、補正露光に最適な位置に、露光マスク、レチクルス
テージ、ウエハステージおよびＸ−Ｙステージ等をそれ
ぞれ駆動する。ここで、主制御部１が補正露光に最適な
露光パルス強度およびパルス数等を指定して、露光制御
システム６に補正露光指令を出力すると、露光制御シス
テム６は指定されたデータにしたがってパルス発光を行
なう。このようにして補正露光の一連の動作が終了する
と、図７の積算値は、図３のごとく正常なスキャン露光
が行なわれたと同等に露光むらのない状態となる。In order to solve this problem of exposure unevenness, in this embodiment, first, when there is an extreme abnormality in the exposure pulse, that is, when the pulse intensity of the exposure pulse is below a certain value, the exposure algorithm The exposure pulse as specified by the exposure algorithm
The subsequent exposure is performed. The intensity of the exposure pulse is sequentially monitored by the pulse intensity monitor 7. FIGS. 6 and 7 show a state in which a series of exposures has been completed on the assumption that an exposure pulse has been lost and the exposure pulse for which the exposure algorithm has been lost is normal, as described above. In this state, as can be seen from FIG. 7, an underexposed portion exists in a certain portion of the wafer. Therefore, after ending this series of exposure, the correction exposure control means 10
The abnormal exposure pulse and the exposure pulse train before and after it are read out from the pulse intensity storage unit 8, and the corresponding exposure mask position, reticle stage position, wafer stage attitude, XY stage position, and other data are stored in the exposure position. Read from the storage unit 9. From these data, FIG.
The optimum correction exposure pulse intensity for correcting the integrated value and the optimum correction exposure position are calculated and transmitted to the main control unit 1. Upon receiving this data, the main control unit 1 starts a correction exposure operation at an appropriate timing. In the correction exposure, the exposure mask, the reticle stage, the wafer stage, the XY stage, and the like are respectively driven to the positions optimal for the correction exposure based on the data received from the correction exposure control unit 10. Here, when the main control unit 1 designates the optimum exposure pulse intensity and pulse number for the correction exposure, and outputs a correction exposure command to the exposure control system 6, the exposure control system 6 emits a pulse according to the specified data. Perform When a series of operations of the correction exposure is completed in this way, the integrated value in FIG. 7 is in a state in which there is no exposure unevenness as in the case where the normal scan exposure is performed as shown in FIG.
【００１２】これらの補正露光は、先述した露光パルス
の欠落や強度低下に対して有効であり、また複数の連続
あるいは不連続な露光パルス異常に対しても同等な効果
を発揮することはいうまでもない。It is needless to say that these correction exposures are effective for the above-mentioned exposure pulse dropout and intensity reduction, and also have the same effect on a plurality of continuous or discontinuous exposure pulse abnormalities. Nor.
【００１３】[0013]
【発明の効果】以上説明したように、本発明によればス
キャン露光における露光パルスの異常による露光むらの
悪化を防止することができる。As described above, according to the present invention, it is possible to prevent the exposure unevenness from being deteriorated due to the abnormality of the exposure pulse in the scanning exposure.
【図１】 本発明の一実施例に係るスキャン露光装置の
構成を示す図である。FIG. 1 is a diagram showing a configuration of a scan exposure apparatus according to one embodiment of the present invention.
【図２】 スキャン露光における露光パルス列を模式的
に表わした図である。FIG. 2 is a diagram schematically showing an exposure pulse train in scan exposure.
【図３】 スキャン露光における露光パルス列の積算値
を表わした図である。FIG. 3 is a diagram showing an integrated value of an exposure pulse train in scan exposure.
【図４】 スキャン露光で露光パルスの欠落が発生した
場合を模式的に表わした図である。FIG. 4 is a diagram schematically illustrating a case where a missing exposure pulse occurs in scan exposure.
【図５】 スキャン露光で露光パルスの欠落が発生した
場合の積算値を表わした図である。FIG. 5 is a diagram showing an integrated value in a case where a missing exposure pulse occurs in scan exposure.
【図６】 スキャン露光で露光パルスの欠落が発生し、
かつ露光アルゴリズムが正常な露光パルスが得られたも
のとして露光を継続した場合を模式的に表わした図であ
る。FIG. 6: Exposure pulses are missing during scan exposure,
FIG. 7 is a diagram schematically illustrating a case where exposure is continued assuming that a normal exposure pulse is obtained by an exposure algorithm.
【図７】 スキャン露光で露光パルスの欠落が発生し、
かつ露光アルゴリズムが正常な露光パルスが得られたも
のとして露光を継続した場合の積算値を表わした図であ
る。FIG. 7: Exposure pulses are missing during scan exposure,
FIG. 9 is a diagram illustrating an integrated value when exposure is continued assuming that a normal exposure pulse is obtained by an exposure algorithm.
１：主制御部、２：露光マスク制御システム、３：レチ
クル走査制御システム、４：ウエハ姿勢制御システム、
５：ウエハ走査制御システム、６：露光制御システム、
７：パルス強度モニタ、８：露光パルス記憶部、９：露
光位置記憶部、１０：補正露光制御手段。1: main control unit, 2: exposure mask control system, 3: reticle scanning control system, 4: wafer attitude control system,
5: Wafer scanning control system, 6: Exposure control system,
7: pulse intensity monitor, 8: exposure pulse storage unit, 9: exposure position storage unit, 10: correction exposure control unit.
Claims (4)
部を走査して露光を行なうスキャン露光装置において、 露光パルスの強度をモニタする露光パルスモニタ手段
と、該モニタ手段によって得られた露光パルスによる露
光量を記憶する露光パルス記憶手段と、該露光パルス発
光時の装置各部の走査位置を記憶する位置記憶手段を有
するスキャン露光装置。1. A scanning exposure apparatus which uses a pulse light as an exposure light source to scan each part of the apparatus to perform exposure, wherein an exposure pulse monitor means for monitoring the intensity of the exposure pulse, and an exposure pulse obtained by the monitor means. A scanning exposure apparatus comprising: an exposure pulse storage means for storing an exposure amount; and a position storage means for storing a scanning position of each unit of the apparatus when the exposure pulse is emitted.
された露光量が所定量より少ない過少露光の露光パルス
発光が発生した場合、露光のための走査が終了した後
に、該過少露光の露光パルス発光時の装置各部の走査位
置を前記位置記憶手段から読み出し、当該位置に装置各
部を駆動して補正露光を行なう補正露光手段をさらに有
する請求項１に記載のスキャン露光装置。2. When an underexposure exposure pulse emission in which the exposure amount detected by the exposure pulse monitoring means is smaller than a predetermined amount occurs, after the exposure scan is completed, the underexposure exposure pulse emission is performed. 2. The scanning exposure apparatus according to claim 1, further comprising: a correction exposure unit that reads a scanning position of each unit of the apparatus from the position storage unit and drives each unit of the apparatus at the position to perform a correction exposure.
光パルスおよびその前後のパルス列による露光量を前記
露光パルス記憶手段から読み出して、最適な補正露光の
ための露光量を算出するための演算手段を有し、該演算
手段によって算出された値に基づいて前記補正露光を行
なう、請求項２に記載のスキャン露光装置。3. The correction exposure unit reads an exposure amount of the underexposure exposure pulse and a pulse train before and after the underexposure from the exposure pulse storage unit and calculates an exposure amount for optimal correction exposure. 3. The scan exposure apparatus according to claim 2, further comprising: means for performing the correction exposure based on the value calculated by the calculation means.
された露光量が所定量より少ない過少露光の露光パルス
発光が発生した場合、その過少露光であったパルス発光
をその露光過程においては正常とみなしうる量のパルス
強度があったものとして以後の露光制御を実施すること
を特徴とする、請求項２および３に記載のスキャン露光
装置。4. When underexposure exposure pulse light emission in which the exposure amount detected by the exposure pulse monitoring means is smaller than a predetermined amount occurs, the underexposure pulse light emission can be regarded as normal in the exposure process. 4. The scanning exposure apparatus according to claim 2, wherein the subsequent exposure control is performed assuming that the pulse intensity has been obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8285917A JPH10116778A (en) | 1996-10-09 | 1996-10-09 | Scanning aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8285917A JPH10116778A (en) | 1996-10-09 | 1996-10-09 | Scanning aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10116778A true JPH10116778A (en) | 1998-05-06 |
Family
ID=17697695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8285917A Pending JPH10116778A (en) | 1996-10-09 | 1996-10-09 | Scanning aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10116778A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094470A1 (en) * | 2006-02-16 | 2007-08-23 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
| US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
| US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
| US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
-
1996
- 1996-10-09 JP JP8285917A patent/JPH10116778A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
| US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
| US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
| US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
| US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
| US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
| US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US10241417B2 (en) | 2004-02-06 | 2019-03-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| WO2007094470A1 (en) * | 2006-02-16 | 2007-08-23 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| US7714982B2 (en) | 2006-02-16 | 2010-05-11 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9857599B2 (en) | 2007-10-24 | 2018-01-02 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5898477A (en) | Exposure apparatus and method of manufacturing a device using the same | |
| KR100531581B1 (en) | Laser-illuminated stepper or scanner with energy sensor feedback | |
| JPH07135167A (en) | Scanning aligner and device manufacturing method using the same | |
| JPH10116778A (en) | Scanning aligner | |
| JP2000323396A (en) | Exposure method, aligner, and manufacture thereof | |
| JPH05167162A (en) | Excimer laser control equipment and working equipment | |
| US6219367B1 (en) | Method for determining life of laser light source | |
| DE60121098T2 (en) | Laser control device, exposure apparatus and method for manufacturing a semiconductor device | |
| JP7254098B2 (en) | gas monitoring system | |
| TWI663668B (en) | System and methos of monitoring an optical lithography system | |
| US5567928A (en) | Scanning exposure apparatus and method including controlling irradiation timing of an irradiation beam with respect to relative movement between the beam and a substrate | |
| US20060093009A1 (en) | Gas laser device and exposure apparatus using the same | |
| KR102560079B1 (en) | Control system for multiple deep ultraviolet optical oscillators | |
| JP2785157B2 (en) | Light intensity control device and exposure device | |
| JPS6386593A (en) | Output control method for eximer laser and equipment therefor | |
| JP2526983B2 (en) | Exposure equipment | |
| JPH1012957A (en) | Beam controller and aligner employing the same | |
| JP2771927B2 (en) | Multiple light beam scanning device | |
| JP2881062B2 (en) | Substrate alignment method and apparatus | |
| KR100239628B1 (en) | Excimer laser output control method, excimer laser, exposure apparatus and method, and device manufacturing method | |
| NL2024949A (en) | Method for controlling a lithographic system | |
| JPH09199403A (en) | Peojection aligner | |
| EP1010040A4 (en) | Laser-illuminated stepper or scanner with energy sensor feedback | |
| JPH05343287A (en) | Exposing method | |
| JPH09180984A (en) | Exposure method |