JPH0977534A - Silica glass jig for cvd film forming with glassy carbon film and its preparation - Google Patents
Silica glass jig for cvd film forming with glassy carbon film and its preparationInfo
- Publication number
- JPH0977534A JPH0977534A JP26092595A JP26092595A JPH0977534A JP H0977534 A JPH0977534 A JP H0977534A JP 26092595 A JP26092595 A JP 26092595A JP 26092595 A JP26092595 A JP 26092595A JP H0977534 A JPH0977534 A JP H0977534A
- Authority
- JP
- Japan
- Prior art keywords
- silica glass
- glassy carbon
- jig
- film
- glass jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリカガラス治
具、さらに詳しくは半導体素子の製造における、気相化
学反応による成膜工程で使用するＣＶＤ成膜用シリカガ
ラス治具、及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silica glass jig, and more specifically to a silica glass jig for CVD film formation used in a film forming process by a gas phase chemical reaction in the manufacture of semiconductor devices, and a method for manufacturing the same. .
【０００２】[0002]
【従来技術】従来、半導体素子の製造において、１種以
上の化合物ガスを気相で化学反応させ生成した珪素、窒
化珪素、二酸化珪素等を薄膜状にウエハ上に形成する、
いわゆる気相化学反応法（Ｃｈｅｍｉｃａｌ Ｖａｐｏ
ｒ ＤｅｐｏｓｉｔｉｏｎＭｅｔｈｏｄ、以下ＣＶＤ法
という）が採用されてきた。前記成膜法では炉心管やウ
エハボート等のシリカガラス治具を使用することが多
く、ＣＶＤ法で形成した成膜物質がウエハにとどまらず
前記シリカガラス治具の表面にも堆積する。成膜物質の
うち珪素、窒化珪素は成膜温度である数百度では安定し
てシリカガラス表面に付着しているが、室温まで冷却さ
れると、成膜物質の熱膨張係数がシリカガラスより大き
いことから治具表面に堆積した成膜物質に引張り応力が
生じる。その結果、固くて脆いこれらの成膜物質にクラ
ックが発生する。また、二酸化珪素は、構成成分が生地
のシリカガラスと同じところから熱膨張係数の差に基づ
くクラックの発生は原理的に生じない筈である。しか
し、例えばＴＥＯＳ（正珪酸四エチルエステル）からＣ
ＶＤ法でシリカ膜を成膜する場合には、堆積した時化学
量論的組成ではないので、その後の熱処理で化学量論比
に近付けるのが普通である。その時に起こる収縮が原因
で成膜物質にクラックが発生する。前記珪素、窒化珪
素、二酸化珪素はシリカガラスとの接合が良いところか
ら成膜物質に発生した前記クラックはシリカガラス生地
にまで進行し１０μｍに満たない厚さの成膜物質の付着
で厚さ３ｍｍ以上のシリカガラス管や直径６ｍｍ以上の
シリカガラス棒が破断することが珍しくない。こうした
治具の破損を防止するため従来では治具に付着する成膜
物質の引張り応力が大きくなる前に該成膜物質を洗浄除
去することが行われていた。ところが治具の洗浄回数が
頻繁であるところから装置の稼働率が低下し製造コスト
を引き上げるといった不都合があった。2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, silicon, silicon nitride, silicon dioxide and the like produced by chemically reacting one or more compound gases in a vapor phase are formed on a wafer in a thin film form.
So-called vapor phase chemical reaction method (Chemical Vapo)
r Deposition Method (hereinafter referred to as the CVD method) has been adopted. A silica glass jig such as a furnace tube or a wafer boat is often used in the film forming method, and the film forming material formed by the CVD method is not limited to depositing on the wafer but is deposited on the surface of the silica glass jig. Silicon and silicon nitride among the film-forming substances are stably attached to the silica glass surface at the film-forming temperature of several hundred degrees, but when cooled to room temperature, the thermal expansion coefficient of the film-forming substance is larger than that of silica glass. Therefore, tensile stress is generated in the film-forming substance deposited on the jig surface. As a result, cracks are generated in these hard and brittle film forming materials. In principle, silicon dioxide should not generate cracks due to the difference in the coefficient of thermal expansion, since the constituent components of the silicon dioxide are the same as those of the silica glass of the base material. However, for example, from TEOS (tetrasilicic acid tetraethyl ester) to C
When a silica film is formed by the VD method, since it does not have a stoichiometric composition at the time of deposition, it is usual to bring it closer to the stoichiometric ratio in the subsequent heat treatment. The shrinkage that occurs at that time causes cracks in the film-forming material. The silicon, silicon nitride, and silicon dioxide have a good bonding with silica glass, and the cracks that have occurred in the film-forming substance progress to the silica glass substrate, and the film-forming substance having a thickness of less than 10 μm adheres to a thickness of 3 mm. It is not uncommon for the above silica glass tubes and silica glass rods with a diameter of 6 mm or more to break. In order to prevent such damage to the jig, conventionally, the film-forming material is washed and removed before the tensile stress of the film-forming material attached to the jig becomes large. However, since the jigs are frequently cleaned, the operating rate of the apparatus is lowered, and the manufacturing cost is increased.
【０００３】[0003]
【発明が解決しようとする課題】こうした現状に鑑み、
本発明者等はシリカガラス治具の破損について検討して
いたところ、ガラス状カーボンが高い表面硬度を持ち、
パーテクルや不純物ガスの発生が少ないことから、該ガ
ラス状カーボンでシリカガラス基材を被覆すれば上記問
題が解決できると考え被覆を行ったところ、滑らかな表
面を有するシリカガラス基材ではガラス状カーボン膜
が、半導体素子のＣＶＤ処理中に大きな薄片となって剥
離し、それが堆積した成膜物質とともに落下し半導体素
子を汚染するという欠点があることを発見した。In view of the current situation,
The present inventors have been studying the damage of the silica glass jig, glassy carbon has a high surface hardness,
Since the generation of particles and impurity gas is small, it was thought that the above problems could be solved by coating the silica glass base material with the glassy carbon, and the coating was performed. It has been discovered that the film has a drawback in that during the CVD process of the semiconductor device, it peels into large flakes and is peeled off, and it drops together with the deposited film forming material to contaminate the semiconductor device.
【０００４】そこで前記ガラス状カーボン膜の接着性を
最適化すべく鋭意研究を続けた結果、ガラス状カーボン
を被覆するシリカガラス基材の表面を特定の範囲の粗さ
にすることで接着強度が最適化され薄片の剥離がないこ
と、特にシリカガラス基材を化学的処理で粗面化すると
適切な接着強度を有するガラス状カーボン膜が得られる
ことを見出し、本発明を完成したものである。すなわ
ち、Therefore, as a result of continuing intensive studies to optimize the adhesiveness of the glassy carbon film, the adhesive strength is optimized by making the surface of the silica glass substrate coating the glassy carbon a specific range of roughness. The present invention has been completed by finding that the glass-like carbon film having an appropriate adhesive strength can be obtained when the silica glass base material is not peeled off and the silica glass substrate is roughened by a chemical treatment. That is,
【０００５】本発明は、ガラス状カーボン膜を有するＣ
ＶＤ成膜用シリカガラス治具を提供することを目的とす
る。The present invention relates to C having a glassy carbon film.
It is an object to provide a silica glass jig for VD film formation.
【０００６】また、本発明は、化学的処理で粗面化した
シリカガラス基材にガラス状カーボンを被覆してなるＣ
ＶＤ成膜用シリカガラス治具を提供することを目的とす
る。Further, according to the present invention, a silica glass substrate roughened by a chemical treatment is coated with glassy carbon C
It is an object to provide a silica glass jig for VD film formation.
【０００７】さらに、本発明は、上記ＣＶＤ成膜用シリ
カガラス治具の製造方法を提供することを目的とする。A further object of the present invention is to provide a method for manufacturing the above silica glass jig for CVD film formation.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成する本発
明は、表面にガラス状カーボン膜を有するシリカガラス
治具において、表面粗さが中心線平均粗さ（Ｒa）で
０．０３〜０．３０μｍのシリカガラス基材をガラス状
カーボンで被覆したＣＶＤ成膜用シリカガラス治具及び
その製造方法に関する。前記ガラス状カーボンとは、例
えば「炭素」Ｎｏ．４５（１９６６）第１９〜２５頁に
記載されているようにフラン樹脂、フェノール樹脂又は
それらの共縮合樹脂等、特に好ましくはフルフラールと
フェノールとの共縮合樹脂、の熱硬化性樹脂を原料と
し、それをＣＶＤ成膜用シリカガラス基材に塗布したの
ち炭化することで形成されるガラス状組織を有するカー
ボンをいう。前記原料の炭化処理は不活性ガス雰囲気
中、好ましくはアルゴン雰囲気中でシリカガラスの変形
温度以下、すなわち約１１００℃以下の加熱処理で実施
される。本発明のＣＶＤ成膜用シリカガラス治具の作成
においてシリカガラス基材の表面を粗にしておくことが
必須である。前記表面の粗さは中心線平均粗さ（Ｒａ）
で０．０３〜０．３０μｍの範囲で選ばれる。前記範囲
の表面粗さを有することにより堆積した成膜物質に引張
り応力が発生してもガラス状カーボン膜にクラックが入
るにとどまり、シリカガラス生地自体にクラックが進行
することがない。しかしながら、シリカガラス基材の表
面粗さが０．３μｍを超えると、接着が強過ぎガラス状
カーボン膜に発生したクラックがガラス生地自体にまで
進行しシリカガラスを損傷する。また、表面粗さが０．
０３μｍ未満ではガラス状カーボン膜との接着強度の改
善が不十分である。The present invention for achieving the above object provides a silica glass jig having a glassy carbon film on the surface thereof, the surface roughness of which is 0.03 to about center line average roughness ( Ra ). The present invention relates to a silica glass jig for CVD film formation in which a 0.30 μm silica glass base material is coated with glassy carbon, and a method for manufacturing the same. The glassy carbon is, for example, “carbon” No. 45 (1966) p. 19 to 25, a thermosetting resin of furan resin, phenolic resin or co-condensed resin thereof, particularly preferably co-condensed resin of furfural and phenol, is used as a raw material, It refers to carbon having a glassy structure formed by applying it to a silica glass substrate for CVD film formation and then carbonizing it. The carbonization treatment of the raw material is carried out in an inert gas atmosphere, preferably an argon atmosphere, by a heat treatment at a temperature not higher than the deformation temperature of silica glass, that is, not higher than about 1100 ° C. In producing the silica glass jig for CVD film formation of the present invention, it is essential to roughen the surface of the silica glass substrate. The surface roughness is the center line average roughness (Ra).
Is selected in the range of 0.03 to 0.30 μm. Even if a tensile stress is generated in the deposited film-forming material having a surface roughness within the above range, the glassy carbon film is only cracked and the silica glass fabric itself is not cracked. However, when the surface roughness of the silica glass substrate exceeds 0.3 μm, the adhesion is so strong that cracks generated in the glassy carbon film propagate to the glass substrate itself and damage the silica glass. Further, the surface roughness is 0.
If it is less than 03 μm, the improvement of the adhesive strength with the glassy carbon film is insufficient.
【０００９】上記範囲の表面粗さを有するシリカガラス
基材にガラス状カーボン原料を塗布しそれを加熱炭化す
ると適度の接着強度をもつガラス状カーボン膜が形成さ
れる。その際、堆積成膜物質の厚さとガラス状カーボン
の厚さとの合計が一定の厚さになったとき、洗浄する必
要があることからガラス状カーボン膜は薄い方がよい。
そこで、ガラス状カーボン膜厚は０．５〜１．５μｍの
範囲で選ばれる。前記ガラス状カーボンの膜厚が０．５
μｍ未満では均一な膜になりにくく、またガラス状カー
ボンの膜厚を１．５μｍを超える厚さにするにはガラス
状カーボン原料の塗布、炭化工程を多数繰り返す必要が
あり経済的でない。When a glassy carbon raw material is applied to a silica glass substrate having a surface roughness within the above range and carbonized by heating, a glassy carbon film having an appropriate adhesive strength is formed. At this time, when the total thickness of the deposited film forming material and the glassy carbon becomes a certain thickness, it is necessary to wash the glassy carbon film, and therefore the glassy carbon film is preferably thin.
Therefore, the glassy carbon film thickness is selected in the range of 0.5 to 1.5 μm. The film thickness of the glassy carbon is 0.5
If it is less than μm, it is difficult to form a uniform film, and in order to make the thickness of the glassy carbon more than 1.5 μm, it is necessary to repeat the steps of coating and carbonizing the glassy carbon raw material, which is not economical.
【００１０】シリカガラス基材の表面を粗にする方法と
してはサンドブラスト法等の機械的手段や化学的処理法
等を挙げることができるが、機械的手段はシリカガラス
基材にクラックを発生させ易く、そこに汚染物質が取り
込まれ、それが半導体製品処理中に開放されて半導体製
品を汚染することがあるので好適とはいえない。これに
対し、化学的処理法では基材表面にクラックの発生がな
く汚染物質による汚染がない上に、適切な表面粗さを形
成できる。ガラス状カーボン膜の接着強度と表面粗さが
ほぼ比例することを利用して、成膜物質の珪素、窒化珪
素、二酸化珪素の成膜条件毎にガラス状カーボン膜の接
着強度を最適に制御する。最適な接着強度の場合には成
膜物質にクラックが発生しそれがガラス状カーボン膜に
まで進行してもシリカガラス生地との境界でガラス状カ
ーボン膜の剥離が起こりクラックのシリカガラス基材へ
の進行が防止できる。その結果、成膜物質が１０μｍを
超えて堆積してもシリカガラス基材にクラックの発生が
なくそのまま使用でき、装置の稼働率を上げることがで
きる。前記化学的処理法で使用される処理液としてはフ
ッ化アンモニウム、酢酸、さらに必要によりフッ化水素
及び水を含有する処理液が好適に使用される。前記化学
的処理においてシリカガラス治具の表面の粗さを大きく
するにはフッ化アンモニウムの一部をフッ化水素に代え
るのがよい。このフッ化水素をフッ化水素酸（フッ化水
素５０重量％で残部が水からなる酸）で代行できる。As a method for roughening the surface of the silica glass base material, a mechanical means such as a sand blast method or a chemical treatment method can be mentioned. However, the mechanical means easily causes cracks in the silica glass base material. However, it is not preferable because pollutants are taken in there and they are released during the processing of semiconductor products and may contaminate the semiconductor products. On the other hand, in the chemical treatment method, cracks are not generated on the surface of the base material, contamination by contaminants is prevented, and appropriate surface roughness can be formed. By utilizing the fact that the adhesive strength of the glassy carbon film and the surface roughness are almost proportional, the adhesive strength of the glassy carbon film is optimally controlled for each film forming condition of silicon, silicon nitride, and silicon dioxide as film forming substances. . When the adhesive strength is optimal, cracks occur in the film-forming substance, and even if it progresses to the glass-like carbon film, the glass-like carbon film peels off at the boundary with the silica glass substrate and cracks occur on the silica-glass substrate. Can be prevented. As a result, even if the film-forming substance is deposited to a thickness of more than 10 μm, the silica glass substrate can be used as it is without cracking, and the operating rate of the device can be increased. As the treatment liquid used in the chemical treatment method, a treatment liquid containing ammonium fluoride, acetic acid, and optionally hydrogen fluoride and water is preferably used. In order to increase the roughness of the surface of the silica glass jig in the chemical treatment, it is preferable to replace part of ammonium fluoride with hydrogen fluoride. This hydrogen fluoride can be substituted by hydrofluoric acid (an acid consisting of 50% by weight of hydrogen fluoride and the balance being water).
【００１１】本発明のＣＶＤ成膜用シリカガラス治具
は、シリカガラス基材を表面粗さが中心線平均粗さ（Ｒ
a）で０．０３〜０．３０μｍの範囲に処理し、その上
にフルフラール樹脂、フェノール樹脂、又はそれらの共
縮合樹脂等の熱硬化性樹脂液を塗布し、それを不活性ガ
ス雰囲気中で加熱炭化してガラス状カーボン膜とする方
法で製造できる。前記製造方法におけるシリカガラス治
具の粗面化を化学的処理法で行う場合には、化学的処理
液にシリカガラス基材を２〜５時間浸漬したのち水洗す
ればよい。これにより所望の粗面を有するシリカガラス
基材が得られる。In the silica glass jig for CVD film formation of the present invention, the surface roughness of the silica glass substrate is the center line average roughness (R
a ) in the range of 0.03 to 0.30 μm, and then a thermosetting resin liquid such as furfural resin, phenol resin, or a co-condensation resin thereof is applied on it, and it is treated in an inert gas atmosphere. It can be manufactured by a method of carbonizing by heating to form a glassy carbon film. When the surface roughening of the silica glass jig in the manufacturing method is performed by a chemical treatment method, the silica glass substrate may be immersed in the chemical treatment liquid for 2 to 5 hours and then washed with water. As a result, a silica glass substrate having a desired rough surface is obtained.
【００１２】[0012]
【発明の実施の形態】次に実施例に基づいて本発明をさ
らに詳細に説明するが、本発明はこれらの例によって何
ら限定されるものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００１３】実施例１〜４ シリカガラスをガラス細工で珪素の低圧ＣＶＤ用炉芯管
とウエハボートを作成し、それを表１に示す組成比の化
学的処理液に２〜５時間浸漬したのち、洗浄して表１に
示す中心線平均粗さを有するシリカガラス基材を得た。
得られたシリカガラス基材にフルフラールとフェノール
との共縮合樹脂液を塗布し、固化した後アルゴン雰囲気
中で最高１１００℃まで加熱、炭化処理し厚さ０．８μ
ｍのガラス状カーボン膜を形成した。得られた治具を珪
素の低圧ＣＶＤ工程で使用したところ、１５μｍの珪素
堆積物があってもシリカガラス生地にクラックが発生し
なかった。一方、前記ガラス状カーボン膜のないシリカ
ガラス治具を前記工程で使用したところ、シリカガラス
生地へのクラックの発生を防止するため珪素成膜物質の
堆積厚さが８μｍ毎に洗浄する必要があった。Examples 1 to 4 Silica glass was glass-worked to prepare a silicon low-pressure CVD furnace core tube and a wafer boat, which were immersed in a chemical treatment liquid having a composition ratio shown in Table 1 for 2 to 5 hours. After washing, a silica glass substrate having the center line average roughness shown in Table 1 was obtained.
The silica glass substrate thus obtained was coated with a co-condensation resin solution of furfural and phenol, and after solidification, it was heated to a maximum of 1100 ° C in an argon atmosphere and carbonized to a thickness of 0.8μ.
m glassy carbon film was formed. When the obtained jig was used in a low-pressure CVD process for silicon, no crack was generated in the silica glass material even if there was a 15 μm silicon deposit. On the other hand, when the silica glass jig having no glassy carbon film was used in the above step, it was necessary to wash the deposited silicon film substance every 8 μm in order to prevent the occurrence of cracks in the silica glass material. It was
【００１４】[0014]
【表１】 [Table 1]
【００１５】比較例１、２ シリカガラスをガラス細工で実施例１〜４と同様に低圧
ＣＶＤ用炉芯管とウエハボートを作成し、比較例１で示
す組成比の処理液に浸漬して表面に凹凸を形成した（比
較例１）。この治具と化学的処理を施さず表面平滑な治
具（比較例２）との表面に実施例１と同様にガラス状カ
ーボン膜を形成した。得られた治具を用いて実施例１と
同じく珪素の低圧ＣＶＤ処理を行ったところ、比較例１
の治具には生地のシリカガラスまでクラックが成長し、
また比較例２の治具からは数ｍｍの大きさの薄片が珪素
の堆積物とともに剥離した。Comparative Examples 1 and 2 Silica glass was glass-worked to prepare a low pressure CVD furnace core tube and a wafer boat in the same manner as in Examples 1 to 4, and the surfaces were immersed in a treatment liquid having a composition ratio shown in Comparative Example 1. Concavities and convexities were formed (Comparative Example 1). A glassy carbon film was formed on the surface of this jig and a jig having a smooth surface (Comparative Example 2) which was not subjected to chemical treatment, in the same manner as in Example 1. Using the obtained jig, a low pressure CVD process of silicon was performed in the same manner as in Example 1, and Comparative Example 1
In the jig, cracks grow up to the silica glass of the fabric,
Further, from the jig of Comparative Example 2, a thin piece having a size of several mm was peeled off together with the silicon deposit.
【００１６】[0016]
【発明の効果】本発明のＣＶＤ成膜用シリカガラス治具
は、その表面にガラス状カーボン膜を有し、成膜物質が
厚さ１０μｍを超えて堆積しても破損や薄片の落下がな
く安定して、しかも装置の稼働率よく半導体素子の成膜
ができる。前記治具は、特定の範囲の粗さに治具表面を
処理したのちガラス状カーボン原料を塗布し、それを炭
化するという簡便な方法で製造できるので工業的にも有
利である。EFFECT OF THE INVENTION The silica glass jig for CVD film formation of the present invention has a glassy carbon film on the surface thereof, and even if the film-forming substance is deposited to a thickness of more than 10 μm, there is no breakage or falling of flakes. It is possible to form a semiconductor element film in a stable manner and with a good operation rate of the apparatus. The jig is industrially advantageous because it can be manufactured by a simple method of treating the jig surface with a roughness within a specific range, applying a glassy carbon raw material, and carbonizing the raw material.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 剣持 克彦 東京都新宿区西新宿１丁目22番２号 信越 石英株式会社内 (72)発明者 ディートマ・ヘルマン ドイツ連邦共和国 63801 クラインオス トハイム ラインハルド・ヘラウス・リン グ 29 ヘラウス・クワルツグラス・ゲー エムベーハー ベライヒ ハルプライター ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Katsuhiko Kenmochi 1-22-2 Nishishinjuku, Shinjuku-ku, Tokyo Shin-Etsu Quartz Co., Ltd. Ring 29 Herlaus Quartz Glass GM Behr Berreich Hull Pryter
Claims (5)
ガラス治具において、表面粗さが中心線平均粗さ
（Ｒa）で０．０３〜０．３０μｍのシリカガラス基材
をガラス状カーボンで被覆した治具であることを特徴と
するＣＶＤ成膜用シリカガラス治具。1. A silica glass jig having a glassy carbon film on the surface thereof, wherein a silica glass substrate having a center line average roughness ( Ra ) of 0.03 to 0.30 μm is made of glassy carbon. A silica glass jig for CVD film formation, which is a covered jig.
５μｍであることを特徴とする請求項１記載のＣＶＤ成
膜用シリカガラス治具。2. The glassy carbon film has a thickness of 0.5-1.
The silica glass jig for CVD film formation according to claim 1, wherein the jig is 5 μm.
特徴とする請求項１記載のＣＶＤ成膜用シリカガラス治
具。3. The silica glass jig for CVD film formation according to claim 1, wherein the surface roughness is formed by a chemical treatment.
ガラス状カーボン原料を塗布し、固化し、それを不活性
ガス雰囲気中で炭化してガラス状カーボン膜を形成する
ことを特徴とするガラス状カーボン膜を有するＣＶＤ成
膜用シリカガラス治具の製造方法。4. After roughening the surface of a silica glass substrate,
Manufacture of a silica glass jig for CVD film formation having a glassy carbon film, characterized by coating a glassy carbon raw material, solidifying it, and carbonizing it in an inert gas atmosphere to form a glassy carbon film. Method.
理で中心線平均粗さ（Ｒa）で０．０３〜０．３０μｍ
に形成することを特徴とする請求項４記載のＣＶＤ成膜
用シリカガラス治具の製造方法。5. The center line average roughness ( Ra ) of the surface of the silica glass substrate is 0.03 to 0.30 μm by chemical treatment.
5. The method for manufacturing a silica glass jig for CVD film formation according to claim 4, wherein
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26092595A JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
| EP96114052A EP0763504B1 (en) | 1995-09-14 | 1996-09-03 | Silica glass member and method for producing the same |
| US08/714,209 US5807416A (en) | 1995-09-14 | 1996-09-16 | Silica glass member with glassy carbon coating method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26092595A JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0977534A true JPH0977534A (en) | 1997-03-25 |
| JP3162974B2 JP3162974B2 (en) | 2001-05-08 |
Family
ID=17354676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26092595A Expired - Fee Related JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3162974B2 (en) |
-
1995
- 1995-09-14 JP JP26092595A patent/JP3162974B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3162974B2 (en) | 2001-05-08 |
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