JP3162974B2 - Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same - Google Patents
Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the sameInfo
- Publication number
- JP3162974B2 JP3162974B2 JP26092595A JP26092595A JP3162974B2 JP 3162974 B2 JP3162974 B2 JP 3162974B2 JP 26092595 A JP26092595 A JP 26092595A JP 26092595 A JP26092595 A JP 26092595A JP 3162974 B2 JP3162974 B2 JP 3162974B2
- Authority
- JP
- Japan
- Prior art keywords
- silica glass
- glassy carbon
- jig
- film
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリカガラス治
具、さらに詳しくは半導体素子の製造における、気相化
学反応による成膜工程で使用するＣＶＤ成膜用シリカガ
ラス治具、及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silica glass jig, and more particularly to a silica glass jig for CVD film formation used in a film formation step by a gas phase chemical reaction in the manufacture of a semiconductor device, and a method of manufacturing the same. .
【０００２】[0002]
【従来技術】従来、半導体素子の製造において、１種以
上の化合物ガスを気相で化学反応させ生成した珪素、窒
化珪素、二酸化珪素等を薄膜状にウエハ上に形成する、
いわゆる気相化学反応法（Ｃｈｅｍｉｃａｌ Ｖａｐｏ
ｒ ＤｅｐｏｓｉｔｉｏｎＭｅｔｈｏｄ、以下ＣＶＤ法
という）が採用されてきた。前記成膜法では炉心管やウ
エハボート等のシリカガラス治具を使用することが多
く、ＣＶＤ法で形成した成膜物質がウエハにとどまらず
前記シリカガラス治具の表面にも堆積する。成膜物質の
うち珪素、窒化珪素は成膜温度である数百度では安定し
てシリカガラス表面に付着しているが、室温まで冷却さ
れると、成膜物質の熱膨張係数がシリカガラスより大き
いことから治具表面に堆積した成膜物質に引張り応力が
生じる。その結果、固くて脆いこれらの成膜物質にクラ
ックが発生する。また、二酸化珪素は、構成成分が生地
のシリカガラスと同じところから熱膨張係数の差に基づ
くクラックの発生は原理的に生じない筈である。しか
し、例えばＴＥＯＳ（正珪酸四エチルエステル）からＣ
ＶＤ法でシリカ膜を成膜する場合には、堆積した時化学
量論的組成ではないので、その後の熱処理で化学量論比
に近付けるのが普通である。その時に起こる収縮が原因
で成膜物質にクラックが発生する。前記珪素、窒化珪
素、二酸化珪素はシリカガラスとの接合が良いところか
ら成膜物質に発生した前記クラックはシリカガラス生地
にまで進行し１０μｍに満たない厚さの成膜物質の付着
で厚さ３ｍｍ以上のシリカガラス管や直径６ｍｍ以上の
シリカガラス棒が破断することが珍しくない。こうした
治具の破損を防止するため従来では治具に付着する成膜
物質の引張り応力が大きくなる前に該成膜物質を洗浄除
去することが行われていた。ところが治具の洗浄回数が
頻繁であるところから装置の稼働率が低下し製造コスト
を引き上げるといった不都合があった。2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, silicon, silicon nitride, silicon dioxide, and the like generated by chemically reacting one or more compound gases in a gas phase are formed on a wafer in a thin film form.
The so-called chemical vapor reaction method (Chemical Vapo)
r Deposition Method (hereinafter referred to as CVD method) has been adopted. In the film forming method, a silica glass jig such as a furnace tube or a wafer boat is often used, and a film forming material formed by the CVD method is deposited not only on the wafer but also on the surface of the silica glass jig. Among the film forming materials, silicon and silicon nitride are stably attached to the silica glass surface at a film forming temperature of several hundred degrees, but when cooled to room temperature, the coefficient of thermal expansion of the film forming material is larger than that of silica glass. Therefore, a tensile stress is generated in the film-forming substance deposited on the jig surface. As a result, cracks occur in these hard and brittle film-forming materials. In principle, silicon dioxide should not generate cracks based on the difference in the coefficient of thermal expansion from the same place as the constituent silica glass of the base material. However, for example, from TEOS (tetrasilicic acid tetraethyl ester) to C
When a silica film is formed by the VD method, the composition does not have a stoichiometric composition when deposited, so that the stoichiometric ratio is usually approximated by a subsequent heat treatment. Cracks occur in the film-forming material due to the shrinkage that occurs at that time. The silicon, silicon nitride, and silicon dioxide have good bonding with silica glass, and the cracks generated in the film-forming material progress to the silica glass material, and the thickness of the film-forming material having a thickness of less than 10 μm is 3 mm. It is not uncommon for the above silica glass tube or silica glass rod having a diameter of 6 mm or more to break. Conventionally, in order to prevent such damage to the jig, the film-forming substance has been washed and removed before the tensile stress of the film-forming substance attached to the jig increases. However, since the jig is frequently cleaned, the operation rate of the apparatus is reduced and the manufacturing cost is increased.
【０００３】[0003]
【発明が解決しようとする課題】こうした現状に鑑み、
本発明者等はシリカガラス治具の破損について検討して
いたところ、ガラス状カーボンが高い表面硬度を持ち、
パーテクルや不純物ガスの発生が少ないことから、該ガ
ラス状カーボンでシリカガラス基材を被覆すれば上記問
題が解決できると考え被覆を行ったところ、滑らかな表
面を有するシリカガラス基材ではガラス状カーボン膜
が、半導体素子のＣＶＤ処理中に大きな薄片となって剥
離し、それが堆積した成膜物質とともに落下し半導体素
子を汚染するという欠点があることを発見した。In view of the current situation,
The present inventors were examining the damage of the silica glass jig, glassy carbon has a high surface hardness,
Since the generation of particles and impurity gas is small, it is thought that the above problem can be solved by coating the silica glass substrate with the glassy carbon.When the coating is performed, the silica glass substrate having a smooth surface has a glassy carbon. It has been discovered that the film has the disadvantage that during the CVD process of the semiconductor device it peels off as large flakes, which fall with the deposited film-forming material and contaminate the semiconductor device.
【０００４】そこで前記ガラス状カーボン膜の接着性を
最適化すべく鋭意研究を続けた結果、ガラス状カーボン
を被覆するシリカガラス基材の表面を特定の範囲の粗さ
にすることで接着強度が最適化され薄片の剥離がないこ
と、特にシリカガラス基材を化学的処理で粗面化すると
適切な接着強度を有するガラス状カーボン膜が得られる
ことを見出し、本発明を完成したものである。すなわ
ち、Therefore, as a result of intensive studies to optimize the adhesiveness of the glassy carbon film, the surface of the silica glass substrate coated with the glassy carbon is made to have a specific range of roughness to optimize the adhesive strength. It has been found that the present invention has completed the present invention because it has been found that a glassy carbon film having an appropriate adhesive strength can be obtained when the silica glass substrate is roughened by a chemical treatment, particularly when the silica glass substrate is roughened by a chemical treatment. That is,
【０００５】本発明は、ガラス状カーボン膜を有するＣ
ＶＤ成膜用シリカガラス治具を提供することを目的とす
る。[0005] The present invention relates to a C-containing glassy carbon film.
An object of the present invention is to provide a silica glass jig for VD film formation.
【０００６】また、本発明は、化学的処理で粗面化した
シリカガラス基材にガラス状カーボンを被覆してなるＣ
ＶＤ成膜用シリカガラス治具を提供することを目的とす
る。The present invention also relates to a C-coated glass substrate coated with glassy carbon on a silica glass substrate roughened by a chemical treatment.
An object of the present invention is to provide a silica glass jig for VD film formation.
【０００７】さらに、本発明は、上記ＣＶＤ成膜用シリ
カガラス治具の製造方法を提供することを目的とする。Another object of the present invention is to provide a method for producing the above silica glass jig for CVD film formation.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成する本発
明は、表面にガラス状カーボン膜を有するシリカガラス
治具において、表面粗さが中心線平均粗さ（Ｒa）で
０．０３〜０．３０μｍのシリカガラス基材を厚さ０．
５〜１．５μｍのガラス状カーボンで被覆したことを特
徴とするＣＶＤ成膜用シリカガラス治具及びその製造方
法に関する。前記ガラス状カーボンとは、例えば「炭
素」Ｎｏ．４５（１９６６）第１９〜２５頁に記載され
ているようにフラン樹脂、フェノール樹脂又はそれらの
共縮合樹脂等、特に好ましくはフルフラールとフェノー
ルとの共縮合樹脂、の熱硬化性樹脂を原料とし、それを
ＣＶＤ成膜用シリカガラス基材に塗布したのち炭化する
ことで形成されるガラス状組織を有するカーボンをい
う。前記原料の炭化処理は不活性ガス雰囲気中、好まし
くはアルゴン雰囲気中でシリカガラスの変形温度以下、
すなわち約１１００℃以下の加熱処理で実施される。本
発明のＣＶＤ成膜用シリカガラス治具の作成においてシ
リカガラス基材の表面を粗にしておくことが必須であ
る。前記表面の粗さは中心線平均粗さ（Ｒa）で０．０
３〜０．３０μｍの範囲で選ばれる。前記範囲の表面粗
さを有することにより堆積した成膜物質に引張り応力が
発生してもガラス状カーボン膜にクラックが入るにとど
まり、シリカガラス生地自体にクラックが進行すること
がない。しかしながら、シリカガラス基材の表面粗さが
０．３０μｍを超えると、接着が強過ぎガラス状カーボ
ン膜に発生したクラックがガラス生地自体にまで進行し
シリカガラスを損傷する。また、表面粗さが０．０３μ
ｍ未満ではガラス状カーボン膜との接着強度の改善が不
十分である。In order to achieve the above object, the present invention provides a silica glass jig having a glassy carbon film on its surface, wherein the surface roughness of the jig is 0.03 to 0.73 in terms of center line average roughness ( Ra ). A 0.30 μm silica glass substrate having a thickness of 0.
The present invention relates to a silica glass jig for CVD film formation, which is coated with glassy carbon of 5 to 1.5 μm, and a method for manufacturing the same. The glassy carbon is, for example, “carbon” No. 45 (1966), pp. 19-25, a thermosetting resin of a furan resin, a phenol resin or a co-condensation resin thereof, particularly preferably a co-condensation resin of furfural and phenol, as a raw material; Carbon having a glassy structure formed by applying it to a silica glass substrate for CVD film formation and then carbonizing. The carbonization treatment of the raw material is performed in an inert gas atmosphere, preferably in an argon atmosphere, at or below the deformation temperature of the silica glass,
That is, the heat treatment is performed at about 1100 ° C. or less. In preparing the silica glass jig for CVD film formation of the present invention, it is essential to roughen the surface of the silica glass substrate. The surface roughness is a center line average roughness (R a ) of 0.0
It is selected in the range of 3 to 0.30 μm. Even if a tensile stress is generated in the deposited film-forming substance due to having the surface roughness in the above range, the glass-like carbon film is only cracked, and the crack does not progress in the silica glass material itself. However, if the surface roughness of the silica glass substrate exceeds 0.30 μm, the adhesion is too strong and cracks generated in the glassy carbon film progress to the glass fabric itself and damage the silica glass. The surface roughness is 0.03μ
If it is less than m, the improvement of the adhesive strength with the glassy carbon film is insufficient.
【０００９】上記範囲の表面粗さを有するシリカガラス
基材にガラス状カーボン原料を塗布しそれを加熱炭化す
ると適度の接着強度をもつガラス状カーボン膜が形成さ
れる。その際、堆積成膜物質の厚さとガラス状カーボン
の厚さとの合計が一定の厚さになったとき、洗浄する必
要があることからガラス状カーボン膜は薄い方がよい。
そこで、ガラス状カーボン膜厚は０．５〜１．５μｍの
範囲で選ばれる。前記ガラス状カーボンの膜厚が０．５
μｍ未満では均一な膜になりにくく、またガラス状カー
ボンの膜厚を１．５μｍを超える厚さにするにはガラス
状カーボン原料の塗布、炭化工程を多数繰り返す必要が
あり経済的でない。When a glassy carbon material is applied to a silica glass substrate having a surface roughness in the above range and carbonized by heating, a glassy carbon film having an appropriate adhesive strength is formed. At this time, when the sum of the thickness of the deposited film-forming substance and the thickness of the glassy carbon becomes a certain thickness, it is necessary to clean the glassy carbon film.
Therefore, the glassy carbon film thickness is selected in the range of 0.5 to 1.5 μm. The thickness of the glassy carbon is 0.5
If the thickness is less than μm, it is difficult to form a uniform film, and if the thickness of the glassy carbon exceeds 1.5 μm, it is necessary to repeat many steps of coating and carbonizing the glassy carbon material, which is not economical.
【００１０】シリカガラス基材の表面を粗にする方法と
してはサンドブラスト法等の機械的手段や化学的処理法
等を挙げることができるが、機械的手段はシリカガラス
基材にクラックを発生させ易く、そこに汚染物質が取り
込まれ、それが半導体製品処理中に開放されて半導体製
品を汚染することがあるので好適とはいえない。これに
対し、化学的処理法では基材表面にクラックの発生がな
く汚染物質による汚染がない上に、適切な表面粗さを形
成できる。ガラス状カーボン膜の接着強度と表面粗さが
ほぼ比例することを利用して、成膜物質の珪素、窒化珪
素、二酸化珪素の成膜条件毎にガラス状カーボン膜の接
着強度を最適に制御する。最適な接着強度の場合には成
膜物質にクラックが発生しそれがガラス状カーボン膜に
まで進行してもシリカガラス生地との境界でガラス状カ
ーボン膜の剥離が起こりクラックのシリカガラス基材へ
の進行が防止できる。その結果、成膜物質が１０μｍを
超えて堆積してもシリカガラス基材にクラックの発生が
なくそのまま使用でき、装置の稼働率を上げることがで
きる。前記化学的処理法で使用される処理液としてはフ
ッ化アンモニウム、酢酸、さらに必要によりフッ化水素
及び水を含有する処理液が好適に使用される。前記化学
的処理においてシリカガラス治具の表面の粗さを大きく
するにはフッ化アンモニウムの一部をフッ化水素に代え
るのがよい。このフッ化水素をフッ化水素酸（フッ化水
素５０重量％で残部が水からなる酸）で代行できる。As a method for roughening the surface of the silica glass substrate, mechanical means such as a sand blast method or a chemical treatment method can be used, but the mechanical means easily causes cracks in the silica glass substrate. It is not preferable because contaminants are taken therein and may be released during processing of the semiconductor product to contaminate the semiconductor product. On the other hand, in the case of the chemical treatment method, cracks are not generated on the substrate surface, there is no contamination by contaminants, and an appropriate surface roughness can be formed. Using the fact that the adhesive strength of glassy carbon film and surface roughness are almost proportional, the adhesive strength of glassy carbon film is optimally controlled for each film forming condition of silicon, silicon nitride and silicon dioxide. . In the case of the optimum adhesive strength, cracks occur in the film-forming substance, and even when the cracks progress to the glassy carbon film, the glassy carbon film peels off at the boundary with the silica glass substrate, and the cracks on the silica glass substrate Progress can be prevented. As a result, even if the film-forming substance is deposited in a thickness exceeding 10 μm, the silica glass substrate can be used as it is without cracks, and the operation rate of the apparatus can be increased. As the treatment solution used in the chemical treatment method, a treatment solution containing ammonium fluoride, acetic acid, and, if necessary, hydrogen fluoride and water is preferably used. In order to increase the roughness of the surface of the silica glass jig in the chemical treatment, a part of ammonium fluoride is preferably replaced with hydrogen fluoride. This hydrogen fluoride can be substituted by hydrofluoric acid (acid consisting of 50% by weight of hydrogen fluoride and the balance being water).
【００１１】本発明のＣＶＤ成膜用シリカガラス治具
は、シリカガラス基材を表面粗さが中心線平均粗さ（Ｒ
a）で０．０３〜０．３０μｍの範囲に処理し、その上
にフルフラール樹脂、フェノール樹脂、又はそれらの共
縮合樹脂等の熱硬化性樹脂液を塗布し、それを不活性ガ
ス雰囲気中で加熱炭化してガラス状カーボン膜とする方
法で製造できる。前記製造方法におけるシリカガラス治
具の粗面化を化学的処理法で行う場合には、化学的処理
液にシリカガラス基材を２〜５時間浸漬したのち水洗す
ればよい。これにより所望の粗面を有するシリカガラス
基材が得られる。In the silica glass jig for CVD film formation according to the present invention, the silica glass substrate has a center line average roughness (R
a ) in the range of 0.03 to 0.30 μm, and then apply a thermosetting resin liquid such as furfural resin, phenol resin, or a co-condensation resin thereof, and then apply it in an inert gas atmosphere. It can be manufactured by a method of heating and carbonizing to form a glassy carbon film. When the surface roughening of the silica glass jig in the above manufacturing method is performed by a chemical treatment method, the silica glass substrate may be immersed in a chemical treatment solution for 2 to 5 hours and then washed with water. As a result, a silica glass substrate having a desired rough surface is obtained.
【００１２】[0012]
【発明の実施の形態】次に実施例に基づいて本発明をさ
らに詳細に説明するが、本発明はこれらの例によって何
ら限定されるものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００１３】実施例１〜４ シリカガラスをガラス細工で珪素の低圧ＣＶＤ用炉芯管
とウエハボートを作成し、それを表１に示す組成比の化
学的処理液に２〜５時間浸漬したのち、洗浄して表１に
示す中心線平均粗さを有するシリカガラス基材を得た。
得られたシリカガラス基材にフルフラールとフェノール
との共縮合樹脂液を塗布し、固化した後アルゴン雰囲気
中で最高１１００℃まで加熱、炭化処理し厚さ０．８μ
ｍのガラス状カーボン膜を形成した。得られた治具を珪
素の低圧ＣＶＤ工程で使用したところ、１５μｍの珪素
堆積物があってもシリカガラス生地にクラックが発生し
なかった。一方、前記ガラス状カーボン膜のないシリカ
ガラス治具を前記工程で使用したところ、シリカガラス
生地へのクラックの発生を防止するため珪素成膜物質の
堆積厚さが８μｍ毎に洗浄する必要があった。Examples 1 to 4 Silica glass was glass-worked to prepare a furnace core tube and a wafer boat for low-pressure CVD of silicon, which were immersed in a chemical treatment solution having a composition ratio shown in Table 1 for 2 to 5 hours. After washing, a silica glass substrate having a center line average roughness shown in Table 1 was obtained.
A co-condensation resin solution of furfural and phenol is applied to the obtained silica glass substrate, solidified, heated to a maximum of 1100 ° C. in an argon atmosphere, and carbonized to a thickness of 0.8 μm.
m glassy carbon film was formed. When the obtained jig was used in a silicon low-pressure CVD process, no crack was generated in the silica glass material even if a silicon deposit of 15 μm was present. On the other hand, when a silica glass jig without the glassy carbon film was used in the above process, it was necessary to clean the silicon film material every 8 μm in thickness in order to prevent cracks from occurring in the silica glass material. Was.
【００１４】[0014]
【表１】 [Table 1]
【００１５】比較例１、２ シリカガラスをガラス細工で実施例１〜４と同様に低圧
ＣＶＤ用炉芯管とウエハボートを作成し、比較例１で示
す組成比の処理液に浸漬して表面に凹凸を形成した（比
較例１）。この治具と化学的処理を施さず表面平滑な治
具（比較例２）との表面に実施例１と同様にガラス状カ
ーボン膜を形成した。得られた治具を用いて実施例１と
同じく珪素の低圧ＣＶＤ処理を行ったところ、比較例１
の治具には生地のシリカガラスまでクラックが成長し、
また比較例２の治具からは数ｍｍの大きさの薄片が珪素
の堆積物とともに剥離した。Comparative Examples 1 and 2 A low pressure CVD furnace core tube and a wafer boat were prepared in the same manner as in Examples 1 to 4 using silica glass by glasswork, and immersed in a processing solution having the composition ratio shown in Comparative Example 1 to obtain a surface. In this case, irregularities were formed (Comparative Example 1). A glassy carbon film was formed on the surface of this jig and the jig (Comparative Example 2) having a smooth surface without being subjected to a chemical treatment in the same manner as in Example 1. Using the obtained jig, low-pressure CVD of silicon was performed in the same manner as in Example 1. Comparative Example 1
Cracks grow up to the silica glass of the dough on the jig,
Further, a flake having a size of several mm was peeled off from the jig of Comparative Example 2 together with the silicon deposit.
【００１６】[0016]
【発明の効果】本発明のＣＶＤ成膜用シリカガラス治具
は、その表面にガラス状カーボン膜を有し、成膜物質が
厚さ１０μｍを超えて堆積しても破損や薄片の落下がな
く安定して、しかも装置の稼働率よく半導体素子の成膜
ができる。前記治具は、特定の範囲の粗さに治具表面を
処理したのちガラス状カーボン原料を塗布し、それを炭
化するという簡便な方法で製造できるので工業的にも有
利である。The silica glass jig for CVD film formation according to the present invention has a glassy carbon film on its surface, and is free from breakage and falling of flakes even if the film formation material is deposited in a thickness exceeding 10 μm. A semiconductor element can be stably formed at a high operation rate of the apparatus. The jig is industrially advantageous because it can be manufactured by a simple method of treating the jig surface to a specific range of roughness, applying a glassy carbon raw material, and carbonizing it.
フロントページの続き (72)発明者 ディートマ・ヘルマン ドイツ連邦共和国 63801 クラインオ ストハイム ラインハルド・ヘラウス・ リング 29 ヘラウス・クワルツグラ ス・ゲーエムベーハー ベライヒ ハル プライター (56)参考文献 特開 平４−209781（ＪＰ，Ａ) 特開 平３−187954（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C03C 15/00 - 23/00 H01L 21/205 Continued on the front page (72) Inventor Dietma Hermann Germany 63801 Kleinstöstheim Reinhard-Helaus Ring 29 Heraus-Kwarzgrass-Gähmbeber Beleihull-Palter (56) References JP-A-4-209781 (JP, A) Kaihei 3-187954 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C03C 15/00-23/00 H01L 21/205
Claims (3)
ガラス治具において、表面粗さが中心線平均粗さ
（Ｒa）で０．０３〜０．３０μｍのシリカガラス基材
を厚さ０．５〜１．５μｍのガラス状カーボンで被覆し
たことを特徴とするＣＶＤ成膜用シリカガラス治具。1. A silica glass jig having a glassy carbon film on its surface, wherein a silica glass substrate having a surface roughness of 0.03 to 0.30 μm in center line average roughness (R a ) having a thickness of 0.03 to 0.30 μm. A silica glass jig for CVD film formation, which is coated with a glassy carbon of 5 to 1.5 μm .
粗さ（Ｒ a ）で０．０３〜０．３０μｍにしたのち、ガ
ラス状カーボン原料を塗布し、固化し、次いで不活性ガ
ス雰囲気中で炭化してガラス状カーボン膜を形成するこ
とを特徴とするＣＶＤ成膜用シリカガラス治具の製造方
法。2. The method according to claim 1, wherein the surface roughness of the silica glass substrate is determined by a center line average.
After setting the roughness (R a ) to 0.03 to 0.30 μm , a glassy carbon material is applied, solidified, and then carbonized in an inert gas atmosphere to form a glassy carbon film. Of producing a silica glass jig for CVD film formation.
理で形成することを特徴とする請求項２記載のＣＶＤ成
膜用シリカガラス治具の製造方法。3. The method of claim 1, wherein the surface roughness of the silica glass substrate is measured by a chemical treatment.
The method for producing a silica glass jig for CVD film formation according to claim 2, wherein the jig is formed by a process.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26092595A JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
| EP96114052A EP0763504B1 (en) | 1995-09-14 | 1996-09-03 | Silica glass member and method for producing the same |
| US08/714,209 US5807416A (en) | 1995-09-14 | 1996-09-16 | Silica glass member with glassy carbon coating method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26092595A JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0977534A JPH0977534A (en) | 1997-03-25 |
| JP3162974B2 true JP3162974B2 (en) | 2001-05-08 |
Family
ID=17354676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26092595A Expired - Fee Related JP3162974B2 (en) | 1995-09-14 | 1995-09-14 | Silica glass jig for CVD film formation having glassy carbon film and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3162974B2 (en) |
-
1995
- 1995-09-14 JP JP26092595A patent/JP3162974B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0977534A (en) | 1997-03-25 |
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