JPH095551A - Production of quartz glass waveguide element - Google Patents
Production of quartz glass waveguide elementInfo
- Publication number
- JPH095551A JPH095551A JP15464495A JP15464495A JPH095551A JP H095551 A JPH095551 A JP H095551A JP 15464495 A JP15464495 A JP 15464495A JP 15464495 A JP15464495 A JP 15464495A JP H095551 A JPH095551 A JP H095551A
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- Prior art keywords
- glass
- quartz glass
- silica
- core
- waveguide element
- Prior art date
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- Optical Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、石英系ガラス導波路素
子の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a silica glass waveguide device.
【０００２】[0002]
【従来の技術】石英系ガラス導波路素子は、石英ガラス
基板に、屈折率の高いコア（導波路）を所望の形状に形
成し、その上に屈折率の低いクラッドを形成したもので
あり、薄膜形成、フォトリソグラフィ、エッチング等の
技術を応用して製造されている。2. Description of the Related Art A silica-based glass waveguide element is one in which a core (waveguide) having a high refractive index is formed in a desired shape on a silica glass substrate, and a clad having a low refractive index is formed thereon. It is manufactured by applying techniques such as thin film formation, photolithography, and etching.
【０００３】また、石英系ガラス導波路素子は、光を伝
搬するコアを任意形状に形成できるため、光通信分野に
おいて広範囲に応用されている。Further, the silica-based glass waveguide device is widely applied in the field of optical communication since the core for propagating light can be formed in an arbitrary shape.
【０００４】従来より、石英系ガラス導波路素子の製造
方法として、図６に示すような方法が採用されている。Conventionally, a method shown in FIG. 6 has been adopted as a method of manufacturing a silica glass waveguide element.
【０００５】まず、石英ガラス基板１０上に、電子ビー
ム蒸着法により組成ＳｉＯ2 −ＴｉＯ2 のコアガラス膜
１１を形成する。次に、コアガラス膜１１をフォトリソ
グラフィー及び反応性イオンエッチング（ＲＩＥ）によ
りコア導波路１２を形成させ、火炎堆積法によりＳｉＯ
2 −Ｂ2 Ｏ3 −Ｐ2 Ｏ5 系多孔質ガラス層１３を３００
〜４００μｍの膜厚で堆積させる。First, a core glass film 11 having a composition SiO 2 —TiO 2 is formed on a quartz glass substrate 10 by an electron beam evaporation method. Next, a core waveguide 12 is formed on the core glass film 11 by photolithography and reactive ion etching (RIE), and SiO 2 is formed by a flame deposition method.
The 2- B 2 O 3 -P 2 O 5 based porous glass layer 13 is set to 300.
Deposit to a film thickness of ˜400 μm.
【０００６】その後、電気炉（図示せず）内にＳｉＣか
らなる板１５を載置して、その上に上記石英ガラス基板
１０を乗せて１３３０℃の高温熱処理を施し、多孔質ガ
ラス層１３を、焼結・透明ガラス化させてクラッド層１
４を形成していた。Thereafter, a plate 15 made of SiC is placed in an electric furnace (not shown), the quartz glass substrate 10 is placed on the plate 15 and subjected to a high temperature heat treatment at 1330 ° C. to form a porous glass layer 13. , Sintered / transparent vitrified clad layer 1
4 was formed.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述の
方法では、石英ガラス基板２０は図７に示すように高温
熱処理による変形、すなわち反りＬが生じていた。反り
Ｌは最大で１００μｍに達する場合もあり、設計寸法通
りの導波路コアが得られないという問題があった。However, in the above-mentioned method, the quartz glass substrate 20 is deformed by the high temperature heat treatment, that is, the warp L is generated as shown in FIG. The warpage L may reach 100 μm at the maximum, and there is a problem in that a waveguide core having a design dimension cannot be obtained.
【０００８】例えば、石英系ガラス導波路素子の中に、
複数の光ファイバを一定の間隔で載置しテープ状に加工
したテープファイバと接続するものがあるが、この種の
ガラス導波路素子は、コア導波路が各光ファイバに接続
するよう、導波路間隔が所定の設計値で製造されている
ため、石英ガラス基板が熱処理により反ってしまうと、
導波路のピッチがずれてしまい、テープファイバと接続
させると接続損失及び光損失が増大してしまうという問
題があった。For example, in a silica glass waveguide element,
There is one that connects a plurality of optical fibers placed at a fixed interval and processed into a tape-shaped tape fiber, but this kind of glass waveguide element is a waveguide so that the core waveguide is connected to each optical fiber. Since the spacing is manufactured with a predetermined design value, if the quartz glass substrate warps due to heat treatment,
There is a problem that the pitch of the waveguide is displaced and the connection loss and the optical loss are increased when the waveguide is connected to the tape fiber.
【０００９】そこで、本発明の目的は、高温熱処理を施
しても石英ガラス基板の変形及び反り量が極めて小さい
石英系ガラス導波路素子の製造方法を提供することにあ
る。Therefore, an object of the present invention is to provide a method of manufacturing a silica-based glass waveguide device in which the deformation and warpage of the silica glass substrate are extremely small even when subjected to high temperature heat treatment.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に本発明は、石英ガラス基板にコアガラス膜を形成し、
該コアガラス膜にフォトリソグラフィ及びエッチングを
施してコア導波路を形成した後、この周囲に多孔質ガラ
ス層を形成し、該多孔質ガラス層を焼結して透明ガラス
化するために高温熱処理を施して石英系ガラス導波路素
子を製造する方法において、上記高温熱処理を施す際
に、上記石英ガラス基板を、表面に複数の溝を有するＳ
ｉＣ板に載置するものである。In order to achieve the above object, the present invention provides a core glass film on a quartz glass substrate,
After the core glass film is subjected to photolithography and etching to form a core waveguide, a porous glass layer is formed around this, and a high-temperature heat treatment is performed to sinter the porous glass layer into a transparent glass. In the method of manufacturing a silica-based glass waveguide device by applying the above-mentioned quartz glass substrate, the quartz glass substrate is provided with
It is placed on the iC plate.
【００１１】また、上記ＳｉＣ板の溝は格子状に設けら
れ、上記溝の幅が０．１ｍｍ〜２．０ｍｍであることが
望ましい。Further, it is desirable that the grooves of the SiC plate are provided in a grid pattern and the width of the grooves is 0.1 mm to 2.0 mm.
【００１２】更に、上記ＳｉＣ板の少なくとも表面に薄
膜のＳｉＯ2 がコーティングされていてもよく、溝の格
子角が、辺長４ｍｍ〜９ｍｍとしたものでもよい。Furthermore, at least the surface of the SiC plate may be coated with a thin film of SiO 2 , and the lattice angle of the groove may be a side length of 4 mm to 9 mm.
【００１３】[0013]
【作用】上記構成によれば、石英系ガラス導波路素子の
高温熱処理工程において、複数の溝を有するＳｉＣ板を
用いることにより、石英ガラス基板の変形及び反り量を
極めて小さくすることができる。According to the above construction, the deformation and warpage of the quartz glass substrate can be made extremely small by using the SiC plate having a plurality of grooves in the high temperature heat treatment step of the quartz glass waveguide element.
【００１４】本発明において、ＳｉＣ板に溝を設けた理
由を以下に述べる。In the present invention, the reason why the groove is provided in the SiC plate will be described below.
【００１５】ＳｉＣ板の溝部分は、ＳｉＣ板と石英ガラ
ス基板との間の間隙となるため、高温熱処理時に断熱層
となり、石英ガラス基板とＳｉＣ板が接する部分は熱が
伝導して電気炉と同等の温度になるが、溝部分に接する
石英ガラス基板は、ＳｉＣ板が接する部分より若干低い
温度つまり電気炉内の雰囲気ガスとほぼ同じ温度にな
る。Since the groove portion of the SiC plate serves as a gap between the SiC plate and the quartz glass substrate, it serves as a heat insulating layer during high temperature heat treatment, and heat is conducted to a portion where the quartz glass substrate and the SiC plate are in contact with each other to form an electric furnace. Although the temperature is the same, the temperature of the quartz glass substrate in contact with the groove is slightly lower than the temperature of the part in contact with the SiC plate, that is, almost the same temperature as the atmospheric gas in the electric furnace.
【００１６】従って、高温熱処理を施す際に、高温部
分、つまり粘性が高い部分の面積が減少するため、石英
ガラス基板上に形成された多孔質ガラス層を焼結・透明
ガラス化させた後、冷却させる過程で生じる石英ガラス
基板の変形及び反り部分の面積を減少させることがで
き、よって、石英ガラス基板の変形及び反り量を極めて
小さくすることができる。Therefore, when the high temperature heat treatment is performed, the area of the high temperature portion, that is, the portion having high viscosity is reduced. Therefore, after the porous glass layer formed on the quartz glass substrate is sintered and made into a transparent glass, It is possible to reduce the deformation and the area of the warp portion of the quartz glass substrate that occurs during the cooling process, and thus it is possible to make the deformation and the warp amount of the quartz glass substrate extremely small.
【００１７】また、本発明においてＳｉＣ板にＳｉＯ2
膜をコーティングしたのは、高温熱処理の際に、石英ガ
ラス基板の裏面にＳｉＣ板の微小の凹凸を転写するのを
防ぐことができるからである。In the present invention, the SiC plate is coated with SiO 2
The reason why the film is coated is that it is possible to prevent the transfer of the minute irregularities of the SiC plate to the back surface of the quartz glass substrate during the high temperature heat treatment.
【００１８】[0018]
【実施例】以下、本発明の一実施例を添付図面に基づい
て詳述する。An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
【００１９】（実施例１）図１に示すように本発明の方
法は、まず、外径３インチ、厚さ１ｍｍの石英ガラス基
板１上に、電子ビーム蒸着法により組成ＳｉＯ2 −Ｔｉ
Ｏ2 のコアガラス膜２を厚さ８μｍまで蒸着させる。こ
こで石英ガラス基板１の屈折率はｎ0 ＝１．４５７６コ
アガラス膜の屈折率はｎ1 ＝１．４６２０であり、比屈
折率差はΔ＝０．３０％である。尚、屈折率はＭｅｔｒ
ｉｏｎ社製のプリズム・カプラ（ＰＣ−２０１０）で測
定した。Example 1 As shown in FIG. 1, according to the method of the present invention, first, a composition SiO 2 —Ti is formed on a quartz glass substrate 1 having an outer diameter of 3 inches and a thickness of 1 mm by an electron beam evaporation method.
A core glass film 2 of O 2 is deposited to a thickness of 8 μm. Here, the refractive index of the quartz glass substrate 1 is n 0 = 1.4576, and the refractive index of the core glass film is n 1 = 1.4620, and the relative refractive index difference is Δ = 0.30%. The refractive index is Metr
It was measured with a prism coupler (PC-2010) manufactured by Ion.
【００２０】次に、コアガラス膜２上に、マグネトロン
・スパッタリング法によりＷＳｉ膜を１μｍ形成し、こ
の上にレジストを塗布し、マスクアライナーでコアパタ
ーンを露光後、反応性イオンエッチングによりエッチン
グを施してコア導波路３を形成する。Next, a WSi film having a thickness of 1 μm is formed on the core glass film 2 by a magnetron sputtering method, a resist is applied on the WSi film, the core pattern is exposed by a mask aligner, and etching is performed by reactive ion etching. To form the core waveguide 3.
【００２１】コア導波路３が形成された上記石英ガラス
基板１を、膜形成装置（図示せず）内の加熱されたター
ンテーブル（図示せず）に載置して、ＳｉＣｌ4 とＢＣ
ｌ3 を酸水素バーナに供給して、膜厚２９０μｍのＳｉ
Ｏ2 −Ｂ2 Ｏ3 系多孔質ガラス層４１を形成する。その
後、酸水素バーナにＰＣｌ3 を添加して、上記ＳｉＯ2
−Ｂ2 Ｏ3 系多孔質ガラス層４１上に、膜厚１５μｍの
ＳｉＯ2 −Ｂ2 Ｏ3 −Ｐ2 Ｏ5 系多孔質ガラス４２を形
成し、多孔質ガラス４１及び４２からなる多孔質ガラス
４を形成する。The silica glass substrate 1 on which the core waveguide 3 is formed is placed on a heated turntable (not shown) in a film forming apparatus (not shown) to obtain SiCl 4 and BC.
supplies l 3 in oxyhydrogen burner, a thickness of 290 [mu] m Si
The O 2 —B 2 O 3 based porous glass layer 41 is formed. After that, PCl 3 is added to the oxyhydrogen burner to remove the SiO 2
A porous glass formed by forming a SiO 2 —B 2 O 3 —P 2 O 5 -based porous glass 42 having a film thickness of 15 μm on the —B 2 O 3 -based porous glass layer 41 and forming the porous glass 41 and 42. 4 is formed.
【００２２】ここで、多孔質ガラス層４にＢ2 Ｏ3 、Ｐ
2 Ｏ5 のドーパントを添加したのは、透明ガラスの溶融
温度を下げるためであり、屈折率を石英ガラス基板１と
同等にするためである。Here, B 2 O 3 and P are added to the porous glass layer 4.
The reason for adding the dopant of 2 O 5 is to lower the melting temperature of the transparent glass and to make the refractive index equal to that of the quartz glass substrate 1.
【００２３】その後、ＳｉＣからなり表面にＳｉＯ2 コ
ーティングが施され、図２に示すような、幅１ｍｍ、一
辺の長さが５ｍｍの正方形（５ｍｍ角）の格子状に溝７
を形成したＳｉＣ板６を、電気炉（図示せず）の石英ガ
ラス炉芯管内に載置し、その上に上記石英ガラス基板１
を載せ、Ｈｅガス雰囲気で１３３０℃で１時間加熱し、
多孔質ガラス層４を焼結・透明ガラス化させて、ＳｉＯ
2 −Ｂ2 Ｏ3 −Ｐ2 Ｏ5 系クラッド層５を形成する。
尚、透明ガラス化後のクラッド層５の膜厚は３０μｍで
あり、屈折率は石英ガラス基板と同じｎ3 ＝１．４５７
６である。After that, SiO 2 coating is applied to the surface of SiC, and the grooves 7 are formed in a square (5 mm square) grid having a width of 1 mm and a side length of 5 mm as shown in FIG.
The SiC plate 6 on which the above is formed is placed in a quartz glass furnace core tube of an electric furnace (not shown), and the quartz glass substrate 1 is placed thereon.
And heat it in a He gas atmosphere at 1330 ° C. for 1 hour,
The porous glass layer 4 is sintered and made into a transparent glass, and SiO
To form a 2 -B 2 O 3 -P 2 O 5 based cladding layer 5.
The thickness of the clad layer 5 after transparent vitrification was 30 μm, and the refractive index was the same as that of the quartz glass substrate, n 3 = 1.457.
It is 6.
【００２４】（実施例２）図３に示すように幅０．２ｍ
ｍ、一辺の長さが５ｍｍの正方形（５ｍｍ角）の格子状
に溝７を形成したＳｉＣ板６を用いた以外は実施例１と
同様の方法により石英系導波路素子を形成した。(Embodiment 2) As shown in FIG. 3, the width is 0.2 m.
A silica-based waveguide element was formed by the same method as in Example 1 except that the SiC plate 6 in which the grooves 7 were formed in a square (5 mm square) lattice having a length of m and a side of 5 mm was used.
【００２５】（実施例３）図４に示すように幅１ｍｍ、
一辺の長さが９ｍｍの正方形（９ｍｍ角）の格子状に溝
７を形成したＳｉＣ板６を用いた以外は実施例１と同様
の方法により石英系導波路素子を形成した。(Embodiment 3) As shown in FIG. 4, a width of 1 mm,
A silica-based waveguide element was formed by the same method as in Example 1 except that the SiC plate 6 in which the grooves 7 were formed in the shape of a square (9 mm square) lattice having a side length of 9 mm was used.
【００２６】（実施例３）図５に示すように幅２ｍｍ、
一辺の長さが４ｍｍの正方形（４ｍｍ角）の格子状に溝
７を形成したＳｉＣ板６を用いた以外は実施例１と同様
の方法により石英系導波路素子を形成した。(Embodiment 3) As shown in FIG. 5, a width of 2 mm,
A silica-based waveguide element was formed by the same method as in Example 1 except that the SiC plate 6 in which the grooves 7 were formed in the shape of a square (4 mm square) grid having a side length of 4 mm was used.
【００２７】高温熱処理終了後、石英ガラス基板の反り
量を測定装置（ＤＥＫＴＡＫ）により測定した。実施例
１及び実施例２の反り量は５μｍであり、実施例３の反
り量は８μｍ、実施例４の反り量は１５μｍであった。After the high temperature heat treatment was completed, the amount of warpage of the quartz glass substrate was measured by a measuring device (DEKTAK). The amount of warpage in Examples 1 and 2 was 5 μm, the amount of warpage in Example 3 was 8 μm, and the amount of warpage in Example 4 was 15 μm.
【００２８】従って、本発明の石英系導波路素子の製造
方法によれば、石英ガラス基板の反り量を大幅に減少さ
せることができる。Therefore, according to the method for manufacturing a silica-based waveguide element of the present invention, the amount of warpage of the silica glass substrate can be greatly reduced.
【００２９】尚、溝の幅としては、０．１ｍｍ以上であ
ればよく２ｍｍ以下であればよい。また、高温熱処理の
温度は１２５０℃以上であればよい。更に、ＳｉＣ板に
ＳｉＯ2 膜をコーティングしたのは、高温熱処理の際
に、石英ガラス基板の裏面にＳｉＣ板の微小の凹凸を転
写するのを防ぐためである。The width of the groove may be 0.1 mm or more and 2 mm or less. The temperature of the high temperature heat treatment may be 1250 ° C or higher. Furthermore, the reason why the SiC plate is coated with the SiO 2 film is to prevent the transfer of minute irregularities of the SiC plate to the back surface of the quartz glass substrate during the high temperature heat treatment.
【００３０】[0030]
【発明の効果】以上要するに本発明によれば、複数の溝
を設けたＳｉＣ板を用いて、石英ガラス基板への熱伝導
を妨げることにより、石英ガラス基板の反り量を減少さ
せることができる。よって、接続損失及び光損失を抑止
することが可能となる。In summary, according to the present invention, it is possible to reduce the amount of warpage of a quartz glass substrate by using a SiC plate provided with a plurality of grooves to prevent heat conduction to the quartz glass substrate. Therefore, it is possible to suppress connection loss and optical loss.
【図１】本発明の石英系導波路素子の製造方法の一実施
例を示す図である。FIG. 1 is a diagram showing an embodiment of a method for manufacturing a silica-based waveguide element of the present invention.
【図２】図１のＳｉＣ板を示す拡大図である。FIG. 2 is an enlarged view showing the SiC plate of FIG.
【図３】その他の実施例を示す図である。FIG. 3 is a diagram showing another embodiment.
【図４】その他の実施例を示す図である。FIG. 4 is a diagram showing another embodiment.
【図５】その他の実施例を示す図である。FIG. 5 is a diagram showing another embodiment.
【図６】従来の石英系導波路素子の製造方法を示す図で
ある。FIG. 6 is a diagram showing a conventional method for manufacturing a silica-based waveguide element.
【図７】図６の方法により製造した石英系導波路素子の
石英ガラス基板を示す断面図である。7 is a cross-sectional view showing a silica glass substrate of a silica-based waveguide device manufactured by the method of FIG.
１ 石英ガラス基板 ２ コアガラス膜 ３ コア導波路 ４ 多孔質ガラス層 ５ クラッド層 ６ ＳｉＣ板 ７ 溝 1 Quartz Glass Substrate 2 Core Glass Film 3 Core Waveguide 4 Porous Glass Layer 5 Cladding Layer 6 SiC Plate 7 Groove
Claims (5)
し、該コアガラス膜にフォトリソグラフィ及びエッチン
グを施してコア導波路を形成した後、この周囲に多孔質
ガラス層を形成し、該多孔質ガラス層を焼結して透明ガ
ラス化するために高温熱処理を施して石英系ガラス導波
路素子を製造する方法において、上記高温熱処理を施す
際に、上記石英ガラス基板を、表面に複数の溝を有する
ＳｉＣ板に載置することを特徴とする石英系ガラス導波
路素子の製造方法。1. A core glass film is formed on a quartz glass substrate, a core waveguide is formed by subjecting the core glass film to photolithography and etching, and then a porous glass layer is formed around the core waveguide to form the porous glass layer. In a method for producing a silica-based glass waveguide element by subjecting a glass layer to a high-temperature heat treatment to sinter the glass layer into a transparent glass, the quartz glass substrate is provided with a plurality of grooves on the surface when the high-temperature heat treatment is performed. A method for manufacturing a silica-based glass waveguide element, characterized by placing the glass-based waveguide element on a SiC plate.
ていることを特徴とする請求項１記載の石英系ガラス導
波路素子の製造方法。2. The method for manufacturing a silica-based glass waveguide device according to claim 1, wherein the grooves of the SiC plate are provided in a grid pattern.
であることを特徴とする請求項１または２に記載の石英
系ガラス導波路素子の製造方法。3. The groove has a width of 0.1 mm to 2.0 mm.
The method for producing a silica-based glass waveguide element according to claim 1 or 2, wherein
ＳｉＯ2 がコーティングされていることを特徴とする請
求項１から３のいずれかに記載の石英系ガラス導波路素
子の製造方法。4. The method for manufacturing a silica-based glass waveguide device according to claim 1, wherein at least the surface of the SiC plate is coated with a thin film of SiO 2 .
ｍ〜９ｍｍとしたものである請求項２から４のいずれか
に記載の石英系ガラス導波路素子の製造方法。5. The lattice angle of the groove of the SiC plate has a side length of 4 m.
The method for manufacturing a silica-based glass waveguide element according to any one of claims 2 to 4, wherein m is 9 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464495A JP3293411B2 (en) | 1995-06-21 | 1995-06-21 | Method for manufacturing quartz-based glass waveguide device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464495A JP3293411B2 (en) | 1995-06-21 | 1995-06-21 | Method for manufacturing quartz-based glass waveguide device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH095551A true JPH095551A (en) | 1997-01-10 |
| JP3293411B2 JP3293411B2 (en) | 2002-06-17 |
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ID=15588734
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15464495A Expired - Fee Related JP3293411B2 (en) | 1995-06-21 | 1995-06-21 | Method for manufacturing quartz-based glass waveguide device |
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| Country | Link |
|---|---|
| JP (1) | JP3293411B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023182348A1 (en) * | 2022-03-24 | 2023-09-28 | 三菱ケミカル株式会社 | Method for manufacturing quartz member, method for forming silica coating, and method for smoothing surface of member made from quartz |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008051973A1 (en) | 2006-10-24 | 2008-05-02 | Bradley Fixtures Corporation | Capacitive sensing for washroom fixture |
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1995
- 1995-06-21 JP JP15464495A patent/JP3293411B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023182348A1 (en) * | 2022-03-24 | 2023-09-28 | 三菱ケミカル株式会社 | Method for manufacturing quartz member, method for forming silica coating, and method for smoothing surface of member made from quartz |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3293411B2 (en) | 2002-06-17 |
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