JPH0934133A - Removing method for resist - Google Patents
Removing method for resistInfo
- Publication number
- JPH0934133A JPH0934133A JP20647295A JP20647295A JPH0934133A JP H0934133 A JPH0934133 A JP H0934133A JP 20647295 A JP20647295 A JP 20647295A JP 20647295 A JP20647295 A JP 20647295A JP H0934133 A JPH0934133 A JP H0934133A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- resist
- state
- layer
- resist material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体、回路、各
種プリント基板、各種マスク、リ―ドフレ―ムなどの微
細加工部品の製造に際し、半導体基板などの物品上の不
要となつたレジスト材を除去する方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist material which is not needed on an article such as a semiconductor substrate when manufacturing microfabricated parts such as semiconductors, circuits, various printed boards, various masks, and lead frames. It concerns the method of removal.
【0002】[0002]
【従来の技術】半導体のデバイス製造では、ウエハ上に
レジスト材を塗布し、通常のフオトプロセスにてレジス
トパタ―ンからなる画像を形成し、これをマスクとして
エンツチングしたのち、不要となつたレジスト材を除去
して回路を形成する。つぎの回路を形成するため、再度
レジスト材を塗布し、画像形成−エツチング−レジスト
材の除去というサイクルを繰り返し行う。各種基板に回
路を形成する場合も、レジストパタ―ンの形成後、不要
となつたレジスト材を除去する。2. Description of the Related Art In the manufacture of semiconductor devices, a resist material is applied onto a wafer, an image consisting of a resist pattern is formed by a normal photo process, and an etching is performed using this as a mask. Are removed to form a circuit. In order to form the next circuit, the resist material is applied again, and the cycle of image formation-etching-resist material removal is repeated. When forming circuits on various substrates, unnecessary resist material is removed after the resist pattern is formed.
【0003】ここで、不要となつたレジスト材の除去
は、アツシヤ―(灰化手段)や、溶剤(剥離液)などで
行われるのが一般的である。しかしながら、レジスト材
の除去にアツシヤ―を用いると、作業に長時間を要した
り、レジスト材中の不純物イオンがウエハに注入される
おそれがあり、好ましくない。また、溶剤を用いると、
作業環境を害するという問題があつた。Here, the unnecessary resist material is generally removed by an asher (ashing means) or a solvent (peeling solution). However, if an asher is used for removing the resist material, it may take a long time for the work and impurity ions in the resist material may be injected into the wafer, which is not preferable. Moreover, if a solvent is used,
There was a problem that it harmed the working environment.
【0004】そこで、本件出願人は、たとえば、特開平
4−345015号公報において、レジスト材の除去
に、シ―ト状やテ―プ状などの接着シ―ト類を用い、こ
れをレジストパタ―ンの上面に貼り付けたのち、レジス
ト材と一体に剥離するという方法を提案している。この
方法によれば、レジスト材中の不純物イオンがウエハに
注入されたり、作業環境を害するといつた問題は回避さ
れる。Therefore, the applicant of the present application, for example, in Japanese Unexamined Patent Publication No. 4-345015, uses an adhesive sheet such as a sheet or tape for removing the resist material, which is used as a resist pattern. We have proposed a method in which it is attached to the upper surface of the photoresist and then peeled off integrally with the resist material. According to this method, when the impurity ions in the resist material are implanted into the wafer or the working environment is damaged, problems are avoided.
【0005】[0005]
【発明が解決しようとする課題】しかし、本発明者らの
検討によると、上記の接着シ―ト類を用いる方法では、
除去されるべきレジスト材の一部または微小部分が剥離
されないでそのまま物品上に残ることがあり、全面残さ
ず剥離除去することが難しかつた。However, according to the studies by the present inventors, in the method using the above-mentioned adhesive sheets,
A part or minute part of the resist material to be removed may remain on the article as it is without being peeled off, and it was difficult to peel off the entire surface without removing it.
【0006】したがつて、本発明は、物品上の不要とな
つたレジスト材を、接着シ―ト類を用いて確実に除去す
る方法を提供することを目的としている。SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide a method for surely removing unnecessary resist material on an article by using adhesive sheets.
【0007】[0007]
【課題を解決するための手段】本発明者らは、上記の目
的に対し、鋭意検討した結果、接着シ―ト類の剥離操作
において、レジスト材が剥離されないまま部分的に残る
のは、接着剤からなる層がレジスト材に対し十分に密着
していないことが原因であると考え、この考えに基づ
き、剥離操作前に、特定の密着付与処理を施すようにし
たところ、上記のような剥離性不良の問題が回避され、
レジスト材の確実な剥離除去を達成できることを知り、
本発明を完成するに至つた。Means for Solving the Problems The inventors of the present invention have diligently studied the above object, and as a result, in the peeling operation of the adhesive sheet, the resist material is partially left without being peeled off. It is thought that the cause is that the layer composed of the agent is not sufficiently adhered to the resist material, and based on this idea, a specific adhesion-imparting treatment was applied before the peeling operation. The problem of poor sex is avoided,
Knowing that we can achieve reliable stripping and removal of the resist material,
The present invention has been completed.
【0008】すなわち、本発明は、レジストパタ―ンが
存在する物品上に、接着剤からなる層を設け、この層と
レジスト材とを一体に剥離するレジストの除去方法にお
いて、上記の剥離に先立ち、接着剤からなる層を軟化状
態から硬化ないし固化状態に変化させる密着付与処理を
施して、この層のレジスト材への密着性を高めておくこ
とを特徴とするレジストの除去方法に係るものである。That is, the present invention provides a method of removing a resist in which a layer made of an adhesive is provided on an article having a resist pattern and the layer and the resist material are integrally peeled, prior to the above peeling. The present invention relates to a method for removing a resist, which comprises subjecting a layer made of an adhesive to an adhesion imparting treatment for changing the layer from a softened state to a hardened or solidified state, thereby enhancing the adhesiveness of this layer to a resist material. .
【0009】[0009]
【発明の実施の形態】本発明のレジストの除去方法にお
いては、まず、レジストパタ―ンが存在する物品上に、
接着剤からなる層を設ける。この設け方は、接着剤を上
記物品上に直接塗布する方式で行つてもよいし、あらか
じめ接着剤よりシ―ト状やテ―プ状などの形態とした接
着シ―ト類を作製し、この接着シ―ト類を上記物品に貼
り合わせるようにしてもよい。接着剤からなる層の厚さ
は、とくに限定されないが、通常は約10〜200μm
である。BEST MODE FOR CARRYING OUT THE INVENTION In the method of removing a resist of the present invention, first, on an article on which a resist pattern is present,
A layer of adhesive is provided. This method of providing may be carried out by a method of directly applying an adhesive onto the article, or by preparing adhesive sheets in the form of a sheet or tape from the adhesive in advance, The adhesive sheets may be attached to the above article. The thickness of the adhesive layer is not particularly limited, but is usually about 10 to 200 μm.
It is.
【0010】ここで、接着剤からなる層を補強するため
に、基材を使用してもよい。基材の使用により、剥離操
作時の上記層の破断が防がれ、レジスト材の効率的な剥
離が容易となる。基材を使用する場合、接着剤を物品上
に直接塗布する方式では、その塗布面に裏打ち材として
基材を貼り合わせればよい。また、接着シ―ト類を貼り
合わせる方式では、基材上に接着剤からなる層を設けて
シ―ト状やテ―プ状などの接着シ―ト類を作製しておけ
ばよい。A substrate may be used here to reinforce the layer of adhesive. The use of the base material prevents breakage of the layer during the peeling operation, and facilitates efficient peeling of the resist material. When a base material is used, in the method of directly applying the adhesive onto the article, the base material may be attached to the application surface as a backing material. In addition, in the method of adhering the adhesive sheets, a layer made of an adhesive may be provided on the base material to prepare sheet-shaped or tape-shaped adhesive sheets.
【0011】基材の材質には、ポリエチレン、ポリプロ
ピレン、ポリエチレンテレフタレ―ト、アセチルセルロ
―ス、ポリイミド、紙、木綿、硬質ないし軟質のアルミ
ニウム、ステンレス、ガラスなどがある。基材の形状に
は、フイルム、板状のものがあるが、とくに好ましいの
は多孔質の基材である。多孔質の基材は、基材と接着剤
からなる層との結合力を高め、レジスト剥離時に基材と
上記層との投錨破壊を防ぐことができる。また、接着剤
からなる層を紫外線などの光の照射により硬化させると
きには、光透過性の基材が用いられる。Examples of the material of the base material include polyethylene, polypropylene, polyethylene terephthalate, acetyl cellulose, polyimide, paper, cotton, hard or soft aluminum, stainless steel and glass. The shape of the substrate may be a film or a plate, and a porous substrate is particularly preferable. The porous base material enhances the bonding force between the base material and the layer made of an adhesive, and can prevent anchoring damage between the base material and the layer at the time of peeling the resist. A light-transmissive base material is used when the layer made of an adhesive is cured by irradiation with light such as ultraviolet rays.
【0012】接着剤は、尿素樹脂、フエノ―ル樹脂、エ
ポキシ樹脂、ポリイソシアネ―ト、ポリ酢酸ビニル、ポ
リビニルアセタ―ル、ポリビニルアルコ―ル、ポリ(メ
タ)アクリル酸エステル、ポリシアノアクリル酸エステ
ル、ポリアミド、各種天然高分子などの熱硬化性樹脂や
熱可塑性樹脂を、接着性ポリマ―として使用したもの、
これらに重合性単量体やオリゴマ―、さらに光ないし熱
重合開始剤などを加えたものなど、公知の接着剤を広く
使用できる。Adhesives include urea resin, phenol resin, epoxy resin, polyisocyanate, polyvinyl acetate, polyvinyl acetate, polyvinyl alcohol, poly (meth) acrylic acid ester, polycyanoacrylic acid ester. , Which uses thermosetting resin or thermoplastic resin such as polyamide, various natural polymers, etc. as an adhesive polymer,
Well-known adhesives, such as those obtained by adding a polymerizable monomer, an oligomer, and a photo or thermal polymerization initiator to these, can be widely used.
【0013】本発明においては、物品上にこのような接
着剤からなる層を設け、これを剥離する前に、接着剤の
種類に応じた適宜の密着付与処理、すなわち、接着剤か
らなる層を軟化状態から硬化ないし固化状態に変化させ
る密着付与処理を施すことを大きな特徴とする。ここ
で、上記の“軟化状態”とは、粘度が1012ポアズ以下
になる状態を指している。In the present invention, a layer made of such an adhesive is provided on an article, and an appropriate adhesion-imparting treatment depending on the type of the adhesive, that is, a layer made of the adhesive is provided before peeling the layer. A major feature is that an adhesion-imparting treatment for changing from a softened state to a hardened or solidified state is performed. Here, the above-mentioned "softened state" refers to a state where the viscosity becomes 10 12 poise or less.
【0014】このような密着付与処理のひとつとして、
常態において軟化状態にある硬化性の接着剤からなる層
を光照射または加熱により硬化状態とする処理方式があ
る。この処理方式では、光照射または加熱により硬化す
るタイプのもので、常態において軟化状態にある接着剤
を使用し、これをこの状態のまま層形成して、その剥離
操作前に硬化させるものである。As one of such adhesion-imparting treatments,
There is a treatment method in which a layer made of a curable adhesive which is normally in a softened state is brought into a cured state by irradiation with light or heating. This treatment method is of a type that is cured by light irradiation or heating, and uses an adhesive that is in a softened state in the normal state, and forms a layer in this state and cures it before the peeling operation. .
【0015】密着付与処理の他のひとつとして、接着剤
からなる層を接着性ポリマ―のガラス転移点以上の温度
に加熱して軟化状態(10秒以下のうちに流動)とした
のち、上記ポリマ―のガラス転移点より低い温度に冷却
して固化状態とする処理方式がある。この処理方式は、
接着性ポリマ―として熱可塑性樹脂を選択し、これを用
いた接着剤からなる層に熱を加えて軟化させるととも
に、その剥離操作前に冷却して固化させるものである。As one of the adhesion-imparting treatments, a layer made of an adhesive is heated to a temperature not lower than the glass transition point of the adhesive polymer to bring it into a softened state (flow within 10 seconds or less), and then the above-mentioned polymer is added. -There is a treatment method in which it is cooled to a temperature lower than the glass transition point to make it a solidified state. This processing method is
A thermoplastic resin is selected as the adhesive polymer, and a layer made of an adhesive using the thermoplastic polymer is heated to soften it, and is cooled and solidified before the peeling operation.
【0016】密着付与処理のさらに他のひとつとして、
接着剤からなる層を水もしくは溶剤により膨潤または溶
解して軟化状態(10秒以下のうちに流動)としたの
ち、水もしくは溶剤を乾燥除去して固化状態とする処理
方式がある。この処理方式では、接着性ポリマ―として
水もしくは溶剤により膨潤または溶解する性質を有する
ものが選択され、溶剤としては各種の有機溶剤を使用で
きる。水もしくは溶剤は、物品上のレジスト材の表面に
接着剤からなる層を設ける前に、接着剤中にあらかじめ
含ませておいてもよいし、上記層を設けたのちに供給す
るようにしてもよい。供給方式は、物品表面への供給、
上記層表面への供給のいずれでもよい。基材として多孔
質のものを用いると、上記供給が容易となり、またその
乾燥除去も容易となるため、好ましい。水もしくは溶剤
は、液状で供給してもよいし、蒸気として供給してもよ
い。As still another one of the adhesion imparting treatments,
There is a treatment method in which a layer made of an adhesive is swollen or dissolved by water or a solvent to bring it into a softened state (flow within 10 seconds or less), and then water or the solvent is dried and removed into a solidified state. In this treatment method, an adhesive polymer having a property of swelling or dissolving in water or a solvent is selected, and various organic solvents can be used as the solvent. Water or a solvent may be contained in the adhesive in advance before forming a layer made of the adhesive on the surface of the resist material on the article, or may be supplied after the layer is formed. Good. The supply method is the supply to the surface of the article,
Any of the above-mentioned supply to the layer surface may be used. It is preferable to use a porous material as the base material, because the above-mentioned supply becomes easy and the removal by drying becomes easy. Water or a solvent may be supplied in a liquid state or may be supplied as a vapor.
【0017】このような密着付与処理を施すと、接着剤
からなる層のレジスト材への密着性が著しく高められ
る。この状態で、上記の層を基材を有するときはこの基
材と一緒に剥離操作することにより、物品上のレジスト
材は、この層と一体となつて、簡単かつ完全に剥離除去
される。すなわち、この剥離操作によれば、物品上にレ
ジスト材が部分的に残るといつた問題はもはや生じな
い。When such adhesion-imparting treatment is applied, the adhesion of the layer made of the adhesive to the resist material is remarkably enhanced. In this state, when the above layer has a substrate, the resist material on the article is peeled off together with the substrate, whereby the resist material on the article is easily and completely peeled off. That is, this stripping operation no longer causes problems when the resist material partially remains on the article.
【0018】[0018]
【実施例】つぎに、本発明の実施例を記載して、より具
体的に説明する。Next, an embodiment of the present invention will be described in more detail.
【0019】実施例1 1リツトルの撹拌機付きフラスコに、2−エチルヘキシ
ルアクリレ―ト37.5g、メチルアクリレ―ト22.
5g、アクリル酸90g、メタノ―ル225gを仕込
み、窒素ガス雰囲気下、60℃に昇温し、重合開始剤と
してアゾビスイソブチロニトリル0.3gを入れ、8時
間重合した。重合率はほぼ100重量%で、得られたポ
リマ―の重量平均分子量は20万であつた。このポリマ
―溶液を、厚さが50μmのポリエステルフイルムの上
に、乾燥後の厚さが40μmとなるように塗布し、14
0℃で5分間乾燥して、接着シ―トを作製した。Example 1 A 3-liter flask equipped with a stirrer was charged with 37.5 g of 2-ethylhexyl acrylate and 22.
5 g, 90 g of acrylic acid and 225 g of methanol were charged, the temperature was raised to 60 ° C. under a nitrogen gas atmosphere, 0.3 g of azobisisobutyronitrile was added as a polymerization initiator, and polymerization was carried out for 8 hours. The polymerization rate was about 100% by weight, and the weight average molecular weight of the obtained polymer was 200,000. This polymer solution was applied onto a polyester film having a thickness of 50 μm so that the thickness after drying would be 40 μm.
An adhesive sheet was prepared by drying at 0 ° C for 5 minutes.
【0020】一方、シリコンウエハ(半導体基板)の表
面に、ノボラツクとナフトキノンジアジドからなるレジ
スト材を塗布し、加熱、露光および現像を行い、レジス
トパタ―ンをウエハの全表面に形成したのち、Asイオ
ンを加速エネルギ―80KeVでド―ズ量1×1016i
ons/cm3 の濃度で全面に注入した。On the other hand, a resist material composed of novolak and naphthoquinone diazide is applied to the surface of a silicon wafer (semiconductor substrate), heated, exposed and developed to form a resist pattern on the entire surface of the wafer, and then As ions are formed. At an acceleration energy of 80 KeV and a dose of 1 × 10 16 i
It was injected over the entire surface at a concentration of ons / cm 3 .
【0021】このシリコンウエハ上のレジストパタ―ン
の全面に、上記の接着シ―トを貼り付け、80℃のホツ
トプレ―ト上に1分間のせて加熱することにより、感圧
性接着剤の層を軟化状態としたのち、室温(20℃)に
戻して固化した。その後、この接着シ―トを剥離する
と、レジスト材が一体に剥離除去された。シリコンウエ
ハの表面を蛍光顕微鏡で観察したところ、ウエハ表面に
付着残存するレジスト材は全く認められなかつた。The pressure sensitive adhesive layer was softened by pasting the above adhesive sheet on the entire surface of the resist pattern on this silicon wafer and heating it on a hot plate at 80 ° C. for 1 minute to heat it. After the state, it was returned to room temperature (20 ° C.) and solidified. After that, when the adhesive sheet was peeled off, the resist material was peeled off integrally. When the surface of the silicon wafer was observed with a fluorescence microscope, no resist material adhered and remained on the surface of the wafer was observed.
【0022】実施例2 紫外線硬化性エポキシ樹脂を、厚さ100μmのポリエ
チレン不織布からなる基材上に、厚さが40μmとなる
ように塗布し、接着シ―トを作製し、これを、実施例1
の方法でシリコンウエハ上に形成しかつAsイオンを全
面に注入したレジストパタ―ンの全面に、貼り付け、6
00mj/cm2 の紫外線を照射して、エポキシ樹脂を硬
化させた。その後、この接着シ―トを剥離すると、レジ
スト材が一体に剥離除去された。シリコンウエハの表面
を蛍光顕微鏡で観察したところ、ウエハ表面に付着残存
するレジスト材は全く認められなかつた。Example 2 An ultraviolet-curable epoxy resin was applied on a substrate made of polyethylene nonwoven fabric having a thickness of 100 μm so as to have a thickness of 40 μm to prepare an adhesive sheet. 1
Affixed to the entire surface of the resist pattern formed on the silicon wafer by the method described above and having As ions implanted into the entire surface, 6
The epoxy resin was cured by irradiating with ultraviolet rays of 00 mj / cm 2 . After that, when the adhesive sheet was peeled off, the resist material was peeled off integrally. When the surface of the silicon wafer was observed with a fluorescence microscope, no resist material adhered and remained on the surface of the wafer was observed.
【0023】実施例3 重量平均分子量41万のポリアクリル酸を濃度が20重
量%となるように蒸留水に溶解し、この溶液を、厚さが
80μm、密度が縦横共に40本/インチのガラスクロ
スに坪量が50g/m2となるように塗布し、接着シ―ト
を作製した。実施例1の方法でシリコンウエハ上に形成
しかつAsイオンを全面に注入したレジストパタ―ンの
全面に、蒸留水をスポイドによつてウエハ全体にいきわ
たるように滴下したうえで、上記の接着シ―トを貼り付
け、この状態でウエハを100℃のホツトプレ―ト上に
5分間のせて加熱することにより、蒸留水を乾燥させて
ポリアクリル酸を固化させのち、室温(20℃)に戻し
た。その後、この接着シ―トを剥離すると、レジスト材
が一体に剥離除去された。シリコンウエハの表面を蛍光
顕微鏡で観察したところ、ウエハ表面に付着残存するレ
ジスト材は全く認められなかつた。Example 3 Polyacrylic acid having a weight average molecular weight of 410,000 was dissolved in distilled water so that the concentration was 20% by weight, and this solution was a glass having a thickness of 80 μm and a density of 40 lines / inch in both length and width. The cloth was applied to a basis weight of 50 g / m 2 to prepare an adhesive sheet. Distilled water was dropped onto the entire surface of a resist pattern formed on a silicon wafer by the method of Example 1 and having As ions implanted into the entire surface by a spoid so that the entire surface of the wafer was spread. Then, the wafer was heated on a hot plate at 100 ° C. for 5 minutes in this state to dry the distilled water to solidify the polyacrylic acid and then return to room temperature (20 ° C.). After that, when the adhesive sheet was peeled off, the resist material was peeled off integrally. When the surface of the silicon wafer was observed with a fluorescence microscope, no resist material adhered and remained on the surface of the wafer was observed.
【0024】実施例4 実施例1の方法でシリコンウエハ上に形成しかつAsイ
オンを全面に注入したレジストパタ―ンの全面に、実施
例3で作製した接着シ―トを接触させ、この状態で上か
ら120℃に加熱したスチ―ムアイロンを用いてスチ―
ムを当てながら約3分間加熱圧着し、ウエハを100℃
のホツトプレ―ト上に5分間のせて水を乾燥させてポリ
アクリル酸を固化させたのち、室温(20℃)に戻し
た。その後、この接着シ―トを剥離すると、レジスト材
が一体に剥離除去された。シリコンウエハの表面を蛍光
顕微鏡で観察したところ、ウエハ表面に付着残存するレ
ジスト材は全く認められなかつた。Example 4 The adhesive sheet produced in Example 3 was brought into contact with the entire surface of a resist pattern formed on a silicon wafer by the method of Example 1 and having As ions implanted into the entire surface. Steam from above using a steam iron heated to 120 ° C
The wafer at 100 ℃
It was put on the hot plate of No. 5 for 5 minutes to dry the water to solidify the polyacrylic acid, and then the temperature was returned to room temperature (20 ° C.). After that, when the adhesive sheet was peeled off, the resist material was peeled off integrally. When the surface of the silicon wafer was observed with a fluorescence microscope, no resist material adhered and remained on the surface of the wafer was observed.
【0025】実施例5 実施例1の方法でシリコンウエハ上に形成しかつAsイ
オンを全面に注入したレジストパタ―ンの全面に、メタ
ノ―ルをスポイドによつてウエハ全体にいきわたるよう
に滴下したうえで、実施例1で作製した接着シ―トを接
触させ、この状態でウエハを100℃のホツトプレ―ト
上に5分間のせて加熱することにより、メタノ―ルを乾
燥させてポリマ―を固化させのち、室温(20℃)に戻
した。その後、この接着シ―トを剥離すると、レジスト
材が一体に剥離除去された。シリコンウエハの表面を蛍
光顕微鏡で観察したところ、ウエハ表面に付着残存する
レジスト材は全く認められなかつた。Example 5 On the entire surface of a resist pattern formed on a silicon wafer by the method of Example 1 and implanted with As ions on the entire surface, methanol was dropped by a spoid so as to spread over the entire wafer. Then, the adhesive sheet prepared in Example 1 is brought into contact with the wafer, and in this state, the wafer is heated on a hot plate at 100 ° C. for 5 minutes to dry the methanol and solidify the polymer. After that, the temperature was returned to room temperature (20 ° C.). After that, when the adhesive sheet was peeled off, the resist material was peeled off integrally. When the surface of the silicon wafer was observed with a fluorescence microscope, no resist material adhered and remained on the surface of the wafer was observed.
【0026】比較例1 実施例1の方法でシリコンウエハ上に形成しかつAsイ
オンを全面に注入したレジストパタ―ンの全面に、実施
例1で作製した接着シ―トを、室温(20℃)下でハン
ドロ―ラを用いて貼り付けた。その後、この接着シ―ト
を剥離してみたところ、レジスト材は全く剥離されなか
つた。Comparative Example 1 The adhesive sheet prepared in Example 1 was placed on the entire surface of a resist pattern formed on a silicon wafer by the method of Example 1 and implanted with As ions, at room temperature (20 ° C.). I attached it using a hand roller below. After that, when the adhesive sheet was peeled off, the resist material was not peeled at all.
【0027】比較例2 実施例1の方法でシリコンウエハ上に形成しかつAsイ
オンを全面に注入したレジストパタ―ンの全面に、実施
例2で作製した接着シ―トを、室温(20℃)下でハン
ドロ―ラを用いて貼り付けた。その後、この接着シ―ト
を剥離してみようとしたところ、接着シ―ト中のエポキ
シ樹脂が大部分残存して、レジスト材は全く剥離されな
かつた。COMPARATIVE EXAMPLE 2 The adhesive sheet prepared in Example 2 was applied at room temperature (20 ° C.) to the entire surface of the resist pattern formed on the silicon wafer by the method of Example 1 and implanted with As ions. I attached it using a hand roller below. After that, when the adhesive sheet was tried to be peeled off, most of the epoxy resin in the adhesive sheet remained and the resist material was not peeled off at all.
【0028】比較例3 実施例1の方法でシリコンウエハ上に形成しかつAsイ
オンを全面に注入したレジストパタ―ンの全面に、実施
例3で作製した接着シ―トを、室温(20℃)下でハン
ドロ―ラを用いて貼り付けた。その後、この接着シ―ト
を剥離してみたところ、レジスト材は全く剥離されなか
つた。Comparative Example 3 The adhesive sheet prepared in Example 3 was applied to the entire surface of a resist pattern formed on a silicon wafer by the method of Example 1 and implanted with As ions on the entire surface at room temperature (20 ° C.). I attached it using a hand roller below. After that, when the adhesive sheet was peeled off, the resist material was not peeled at all.
【0029】[0029]
【発明の効果】以上のように、本発明のレジストの除去
方法によれば、物品上の不要となつたレジスト材を簡単
な方法で確実に除去できるから、半導体の製造工程や、
その他液晶などの各種の分野に利用することができる。As described above, according to the resist removing method of the present invention, the unnecessary resist material on the article can be surely removed by a simple method.
In addition, it can be used in various fields such as liquid crystal.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C09J 5/00 JGT C09J 5/00 JHB JHB 6921−4E H05K 3/22 Z H05K 3/22 H01L 21/30 572Z ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location C09J 5/00 JGT C09J 5/00 JHB JHB 6921-4E H05K 3/22 Z H05K 3/22 H01L 21 / 30 572Z
Claims (6)
接着剤からなる層を設け、この層とレジスト材とを一体
に剥離するレジストの除去方法において、上記の剥離に
先立ち、接着剤からなる層を軟化状態から硬化ないし固
化状態に変化させる密着付与処理を施して、この層のレ
ジスト材への密着性を高めておくことを特徴とするレジ
ストの除去方法。1. An article on which a resist pattern is present,
In a method of removing a resist in which a layer made of an adhesive is provided and the layer and a resist material are integrally peeled off, prior to the peeling, an adhesion imparting treatment for changing the layer made of the adhesive from a softened state to a cured or solidified state Is applied to increase the adhesion of this layer to the resist material.
状態にある硬化性の接着剤からなる層を光照射または加
熱により硬化状態とする請求項1に記載のレジストの除
去方法。2. The method for removing a resist according to claim 1, wherein, as the adhesion imparting treatment, a layer made of a curable adhesive which is in a softened state in a normal state is brought into a cured state by irradiation with light or heating.
を接着性ポリマ―のガラス転移点以上の温度に加熱して
軟化状態としたのち、上記ポリマ―のガラス転移点より
低い温度に冷却して固化状態とする請求項1に記載のレ
ジストの除去方法。3. As the adhesion-imparting treatment, a layer made of an adhesive is heated to a temperature not lower than the glass transition point of the adhesive polymer to bring it into a softened state, and then cooled to a temperature lower than the glass transition point of the polymer. The method for removing a resist according to claim 1, wherein the resist is solidified.
を水もしくは溶剤により膨潤または溶解して軟化状態と
したのち、水もしくは溶剤を乾燥除去して固化状態とす
る請求項1に記載のレジストの除去方法。4. The resist according to claim 1, wherein as the adhesion-imparting treatment, a layer made of an adhesive is swollen or dissolved by water or a solvent to make it a softened state, and then the water or the solvent is dried and removed to be a solidified state. Removal method.
なる請求項1〜4のいずれかに記載のレジストの除去方
法。5. The method for removing a resist according to claim 1, wherein a layer made of an adhesive is reinforced by a base material.
ジストの除去方法。6. The method of removing a resist according to claim 5, wherein the substrate is porous.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20647295A JP3443486B2 (en) | 1995-07-19 | 1995-07-19 | How to remove resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20647295A JP3443486B2 (en) | 1995-07-19 | 1995-07-19 | How to remove resist |
Publications (2)
Publication Number | Publication Date |
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JPH0934133A true JPH0934133A (en) | 1997-02-07 |
JP3443486B2 JP3443486B2 (en) | 2003-09-02 |
Family
ID=16523949
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JP20647295A Expired - Fee Related JP3443486B2 (en) | 1995-07-19 | 1995-07-19 | How to remove resist |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000042921A (en) * | 1998-07-23 | 2000-02-15 | Fuji Seisakusho:Kk | Separation of masking and cleaning method |
JP2006328384A (en) * | 2005-04-28 | 2006-12-07 | Nippon Shokubai Co Ltd | Layer-forming material containing fluorine-containing aromatic polymer |
WO2012147235A1 (en) * | 2011-04-26 | 2012-11-01 | 日本メクトロン株式会社 | Method for producing transparent printed wiring board, and method for producing transparent touch panel |
US8487050B2 (en) | 2005-04-28 | 2013-07-16 | Nippon Shokubai Co., Ltd. | Composition containing fluorine-containing aromatic polymer and laminated body containing fluorine-containing aromatic polymer |
JP2014141612A (en) * | 2013-01-25 | 2014-08-07 | Lintec Corp | Separator and separation method |
-
1995
- 1995-07-19 JP JP20647295A patent/JP3443486B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000042921A (en) * | 1998-07-23 | 2000-02-15 | Fuji Seisakusho:Kk | Separation of masking and cleaning method |
JP2006328384A (en) * | 2005-04-28 | 2006-12-07 | Nippon Shokubai Co Ltd | Layer-forming material containing fluorine-containing aromatic polymer |
US8487050B2 (en) | 2005-04-28 | 2013-07-16 | Nippon Shokubai Co., Ltd. | Composition containing fluorine-containing aromatic polymer and laminated body containing fluorine-containing aromatic polymer |
WO2012147235A1 (en) * | 2011-04-26 | 2012-11-01 | 日本メクトロン株式会社 | Method for producing transparent printed wiring board, and method for producing transparent touch panel |
US20130056440A1 (en) * | 2011-04-26 | 2013-03-07 | Masayuki Iwase | Method for manufacturing transparent printed circuit and method for manufacturing transparent touch panel |
JP5774686B2 (en) * | 2011-04-26 | 2015-09-09 | 日本メクトロン株式会社 | Method for producing transparent printed wiring board and method for producing transparent touch panel |
US9198298B2 (en) * | 2011-04-26 | 2015-11-24 | Nippon Mektron, Ltd. | Method for manufacturing transparent printed circuit and method for manufacturing transparent touch panel |
JP2014141612A (en) * | 2013-01-25 | 2014-08-07 | Lintec Corp | Separator and separation method |
Also Published As
Publication number | Publication date |
---|---|
JP3443486B2 (en) | 2003-09-02 |
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