JPH09260635A - Current control device - Google Patents
Current control deviceInfo
- Publication number
- JPH09260635A JPH09260635A JP6410096A JP6410096A JPH09260635A JP H09260635 A JPH09260635 A JP H09260635A JP 6410096 A JP6410096 A JP 6410096A JP 6410096 A JP6410096 A JP 6410096A JP H09260635 A JPH09260635 A JP H09260635A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- variable resistance
- current control
- output terminals
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電流制御素子に関す
る。TECHNICAL FIELD The present invention relates to a current control element.
【０００２】[0002]
【従来の技術】現在のデジタル電子素子では、シリコン
微細加工技術の進歩により「集積化の容易性」と「低消
費電力」，「高速度処理」という三つの特徴をもつシリ
コンＭＯＳトランジスタを使用したものが主流となって
いる。2. Description of the Related Art In the current digital electronic device, a silicon MOS transistor having three characteristics of "ease of integration", "low power consumption", and "high speed processing" is used due to the progress of silicon microfabrication technology. Things are the mainstream.
【０００３】年々素子の小型化が進んでいるが、シリコ
ンＭＯＳトランジスタが上記三つの特徴を保ちながら動
作するのは、電極の大きさ，間隔が０.１μｍ 程度が限
界といわれている。現在の小型化の進歩の割合でいくと
２０１０年には０.１μｍに達してしまう。そのため、
シリコンＭＯＳトランジスタよりも小さくかつ高性能な
次の世代の素子の開発が要望されている。Although the size of the device has been reduced year by year, it is said that the size of the electrode and the interval between the electrodes are about 0.1 μm for the silicon MOS transistor to operate while maintaining the above three characteristics. The current rate of miniaturization will reach 0.1 μm in 2010. for that reason,
There is a demand for the development of next-generation devices that are smaller and have higher performance than silicon MOS transistors.
【０００４】[0004]
【発明が解決しようとする課題】シリコンＭＯＳトラン
ジスタの次の世代の素子として、原子を並べて作製する
原子素子、あるいは単独の分子の機能性を直接利用した
分子素子などが有力な候補に挙げられている。原子素
子，分子素子を用いて集積化回路を作製する際には電流
を制御する素子が必要になる。As the next-generation element of the silicon MOS transistor, an atomic element prepared by arranging atoms, or a molecular element directly utilizing the functionality of a single molecule is cited as a strong candidate. There is. When manufacturing an integrated circuit using atomic elements and molecular elements, an element that controls current is required.
【０００５】本発明の目的は、原子，分子を用いて集積
化回路を作製する際の超小型電流制御素子を提供するこ
とである。It is an object of the present invention to provide a microminiature current control element for manufacturing an integrated circuit using atoms and molecules.
【０００６】[0006]
【課題を解決するための手段】本発明によれば、可変抵
抗部分にドープ量により導電性が変化する物質の機能性
を利用し、一つの入力端子と複数の出力端子をもち、入
力端子の先に分岐点をもち、前記分岐点で複数の導線に
分岐し、分岐した先に可変抵抗部分があり出力端子につ
ながる構造を作ることにより、分子，原子素子で回路を
作製するときに必要な超小型電流制御素子が提供され
る。According to the present invention, by utilizing the functionality of a substance whose conductivity changes depending on the doping amount in the variable resistance portion, it has one input terminal and a plurality of output terminals, and Necessary when making a circuit with a molecular or atomic element by having a branch point first, branching into a plurality of conducting wires at the branch point, and forming a structure in which there is a variable resistance part at the branched point and is connected to an output terminal A miniature current control device is provided.
【０００７】本発明によれば、ゲートに電圧を印加し、
可変抵抗部分の電気抵抗を変化させることにより入出力
端子間の電流量の制御，スイッチを印加電圧の大きさに
よって自由に行うことができる。According to the present invention, a voltage is applied to the gate,
By changing the electric resistance of the variable resistance portion, the amount of current between the input and output terminals can be controlled and the switch can be freely performed according to the magnitude of the applied voltage.
【０００８】[0008]
（実施例１）図１に本発明の実施例に基づく電流制御素
子の構造を示す。導線２は分岐点３で二股に分かれ、そ
の先に各々ドープ量により導電性が変化する可変抵抗部
４，５があり、再び導線９，１０につながる。可変抵抗
部４，５の片側にはそれぞれゲート電極６，７がある。
可変抵抗部４，５の間には電荷移動部８がある。(Embodiment 1) FIG. 1 shows the structure of a current control element according to an embodiment of the present invention. The conducting wire 2 is bifurcated at a branch point 3, and variable resistance portions 4 and 5 whose conductivity changes depending on the doping amount are provided at the ends thereof, and are connected to the conducting wires 9 and 10 again. Gate electrodes 6 and 7 are provided on one side of the variable resistance portions 4 and 5, respectively.
The charge transfer unit 8 is provided between the variable resistance units 4 and 5.
【０００９】導線２，６，７，ゲート電極９，１０は厚
さ，幅ともに約２ｎｍの白金線である。可変抵抗部４，
５はポリアセチレンのフィブリル。電荷移動部８にはド
ーパントとしてヨウ素を封入した。また、この素子は酸
化シリコン基板の上に作製し、さらに上から酸化シリコ
ンで挟み込む構造にしてある。The conductors 2, 6, 7 and the gate electrodes 9, 10 are platinum wires each having a thickness and a width of about 2 nm. Variable resistance part 4,
5 is fibril of polyacetylene. Iodine was enclosed in the charge transfer portion 8 as a dopant. In addition, this element is manufactured on a silicon oxide substrate and further sandwiched by silicon oxide from above.
【００１０】図２は上記素子のゲート電圧による電流制
御，スイッチング特性を示す。横軸はゲート電極に印加
する電圧量、縦軸は入出力端子間に電圧をかけた場合の
電流量である。ドーパントはＩ3 -という形で負に帯電し
ている。可変抵抗部４，５に使用したポリアセチレンは
ドーパントのドープ量によって抵抗値が変化する。FIG. 2 shows current control and switching characteristics by the gate voltage of the above device. The horizontal axis represents the amount of voltage applied to the gate electrode, and the vertical axis represents the amount of current when a voltage is applied between the input and output terminals. The dopant is negatively charged in the form I 3 − . The resistance value of the polyacetylene used for the variable resistance parts 4 and 5 changes depending on the doping amount of the dopant.
【００１１】ゲート電極６，７に電圧をかけない状態で
は可変抵抗部４，５にドーパントが均等にドープされて
いるため、可変抵抗部４，５の抵抗値は等しい。したが
って、入出力端子間に電圧をかけた場合、出力端子１
１，１２の電流値は等しい。When no voltage is applied to the gate electrodes 6 and 7, the variable resistance portions 4 and 5 are uniformly doped with a dopant, so that the resistance values of the variable resistance portions 4 and 5 are equal. Therefore, when a voltage is applied between the input and output terminals, the output terminal 1
The current values of 1 and 12 are equal.
【００１２】ゲート電極６，７間に電圧を印加するとク
ーロン力により正の電極側にドーパントが引き寄せられ
る。ゲート電極６を正とした場合、ゲート電極への印加
電圧量の増大に伴い、可変抵抗部４の抵抗値が小さくな
り、可変抵抗部５の抵抗値が大きくなる。したがって、
入出力端子間に電圧をかけた場合、出力端子１１の方が
出力端子１２より電流は多く流れる。When a voltage is applied between the gate electrodes 6 and 7, the Coulomb force attracts the dopant to the positive electrode side. When the gate electrode 6 is positive, the resistance value of the variable resistance portion 4 decreases and the resistance value of the variable resistance portion 5 increases as the amount of voltage applied to the gate electrode increases. Therefore,
When a voltage is applied between the input and output terminals, a larger amount of current flows in the output terminal 11 than in the output terminal 12.
【００１３】逆に、ゲート電極６を負とした場合、ゲー
ト電極への印加電圧量の増大に伴い、可変抵抗部４の抵
抗値が大きくなり、可変抵抗部５の抵抗値が小さくな
る。したがって、入出力端子間に電圧をかけた場合、出
力端子１２の方が出力端子１１より電流は多く流れる。On the contrary, when the gate electrode 6 is made negative, the resistance value of the variable resistance portion 4 increases and the resistance value of the variable resistance portion 5 decreases as the applied voltage amount to the gate electrode increases. Therefore, when a voltage is applied between the input and output terminals, a larger amount of current flows in the output terminal 12 than in the output terminal 11.
【００１４】可変抵抗部４，５に、ポリパラフェニレン
ビニレン，ポリチオール，ポリピロール，Ｃ60，Ｃ70，
ＬａＣ82，ＹＣ82，カーボンナノチューブを、電荷移動
部８に封入するドーパントに臭素（Ｂｒ）をそれぞれ用
いても同様な結果が得られた。In the variable resistance parts 4 and 5, polyparaphenylene vinylene, polythiol, polypyrrole, C 60 , C 70 ,
Similar results were obtained when LaC 82 , YC 82 , and carbon nanotubes were used and bromine (Br) was used as the dopant to be sealed in the charge transfer portion 8.
【００１５】これらのことから、ゲート電極に印加する
電圧量により出力端子の電流量を制御できることが実証
できた。また、ゲート電極に印加する電圧量の大きさに
より二つの出力端子のスイッチングもできることが実証
できた。From the above, it was proved that the amount of current at the output terminal can be controlled by the amount of voltage applied to the gate electrode. It was also proved that two output terminals can be switched depending on the amount of voltage applied to the gate electrode.
【００１６】（実施例２）電荷移動部８に封入するドー
パントにカリウム（Ｋ）を用いて実施例１と同様の構造
を作製し、実施例１と同様にゲート間に電圧を印加し入
出力端子間に電圧をかけた場合の電流量を測定した。(Embodiment 2) A structure similar to that of Embodiment 1 is prepared by using potassium (K) as a dopant to be sealed in the charge transfer portion 8, and a voltage is applied between the gates as in Embodiment 1 to input / output. The amount of current when a voltage was applied between the terminals was measured.
【００１７】その結果、実施例１とは逆に、ゲート電極
６を正として、入出力端子間に電圧をかけた場合、ゲー
ト電極への印加電圧量の増大に伴い、出力端子１２の方
が出力端子１１より電流は多く流れるようになる。ま
た、ゲート電極６を負として、入出力端子間に電圧をか
けた場合、出力端子１１の方が出力端子１２より電流は
多く流れる。As a result, contrary to the first embodiment, when the gate electrode 6 is positive and a voltage is applied between the input and output terminals, the output terminal 12 is more likely to be connected with the increase of the voltage applied to the gate electrode. A larger amount of current will flow from the output terminal 11. When the gate electrode 6 is negative and a voltage is applied between the input and output terminals, a larger amount of current flows in the output terminal 11 than in the output terminal 12.
【００１８】これは、ドーパントのカリウムがＫ+ とい
う形で正に帯電しているためと考えられる。また、可変
抵抗部４，５に、ポリパラフェニレンビニレン，ポリチ
オール，ポリピロール，Ｃ60，Ｃ70，ＬａＣ82，Ｙ
Ｃ82，カーボンナノチューブを、電荷移動部８に封入す
るドーパントにナトリウム，ルビジウムをそれぞれ用い
ても同様な結果が得られた。It is considered that this is because the dopant potassium is positively charged in the form of K +. Further, polyparaphenylene vinylene, polythiol, polypyrrole, C 60 , C 70 , LaC 82 , Y are added to the variable resistance parts 4 and 5.
Similar results were obtained when C 82 and carbon nanotubes were used as the dopants to be encapsulated in the charge transfer portion 8 and sodium and rubidium were used, respectively.
【００１９】これらのことから、実施例１の時と同様に
ゲート電極に印加する電圧量により出力端子の電流量を
制御することができ、二つの出力端子のスイッチングも
できることが実証できた。From these facts, it was proved that the amount of current applied to the gate electrode can be controlled by the amount of voltage applied to the gate electrode and switching between two output terminals can be performed, as in the first embodiment.
【００２０】（実施例３）電荷移動部８の部分に強誘電
体チタン酸バリウムを用いて実施例１と同様の構造を作
製し、実施例１と同様にゲート間に電圧を印加し入出力
端子間に電圧をかけた場合の電流量を測定した。その結
果が図３である。(Embodiment 3) A structure similar to that of Embodiment 1 is prepared by using a ferroelectric barium titanate in the portion of the charge transfer portion 8, and a voltage is applied between the gates as in Embodiment 1 to input / output. The amount of current when a voltage was applied between the terminals was measured. The result is shown in FIG.
【００２１】ゲート電極６，７に電圧をかけない状態で
は可変抵抗部４，５にドープされていないため、可変抵
抗部４，５は絶縁体である。したがって、入出力端子間
に電圧を印加しても、出力端子１１，１２に電流は流れ
ない。ゲート電極６，７間に電圧を印加すると強誘電体
チタン酸バリウムが誘電分極する。ゲート電極６を正と
した場合、ゲート電極への印加電圧量の増大に伴い、可
変抵抗部４は誘電分極した強誘電体表面の電子が注入さ
れ抵抗値が小さくなる。可変抵抗部５も誘電分極した強
誘電体表面のホールが注入され抵抗値が小さくなるが、
可変抵抗部４と比べると遥かに大きい。これは、ポリア
セチレンの電子受容性が強いためである。Since the variable resistance portions 4 and 5 are not doped in a state where no voltage is applied to the gate electrodes 6 and 7, the variable resistance portions 4 and 5 are insulators. Therefore, even if a voltage is applied between the input and output terminals, no current flows in the output terminals 11 and 12. When a voltage is applied between the gate electrodes 6 and 7, the ferroelectric barium titanate is dielectrically polarized. When the gate electrode 6 is positive, the variable resistance portion 4 is injected with electrons on the surface of the dielectrically polarized ferroelectric substance as the applied voltage amount to the gate electrode increases, and the resistance value decreases. The variable resistance portion 5 is also injected with holes on the surface of the dielectrically polarized ferroelectric substance, so that the resistance value becomes small.
It is much larger than the variable resistance unit 4. This is because polyacetylene has a strong electron accepting property.
【００２２】したがって、入出力端子間に電圧をかけた
場合、出力端子１１の方が出力端子１２より電流は多く
流れる。また、可変抵抗部４，５に、ポリパラフェニレ
ンビニレン，ポリチオール，ポリピロール，Ｃ60，
Ｃ70，ＬａＣ82，ＹＣ82，カーボンナノチューブをそれ
ぞれ用いても、同様な結果が得られた。Therefore, when a voltage is applied between the input and output terminals, a larger amount of current flows in the output terminal 11 than in the output terminal 12. Further, the variable resistance parts 4 and 5 are provided with polyparaphenylene vinylene, polythiol, polypyrrole, C 60 ,
Similar results were obtained using C 70 , LaC 82 , YC 82 and carbon nanotubes, respectively.
【００２３】このことから、ゲート電極に印加する電圧
量により出力端子の電流量を制御することができること
がわかった。また、ゲート電極に印加する電圧量の大き
さにより二つの出力端子のスイッチングもできることが
実証できた。From this, it was found that the amount of current applied to the gate electrode can control the amount of current at the output terminal. It was also proved that two output terminals can be switched depending on the amount of voltage applied to the gate electrode.
【００２４】[0024]
【発明の効果】以上説明したように本発明によれば、ゲ
ートへの印加電圧により入出力端子間の電流量を制御で
きる超小型素子ができる。As described above, according to the present invention, it is possible to provide a microminiature element in which the amount of current between the input and output terminals can be controlled by the voltage applied to the gate.
【図１】本発明の一実施例の素子の構造図。FIG. 1 is a structural diagram of an element according to an embodiment of the present invention.
【図２】本発明の一実施例における素子の基本性能を示
す図。FIG. 2 is a diagram showing basic performance of an element according to an example of the present invention.
【図３】本発明の一実施例における素子の基本性能を示
す図。FIG. 3 is a diagram showing basic performance of an element according to an example of the present invention.
２…導線、３…分岐点、４…可変抵抗部…、５…可変抵
抗部、６…ゲート電極、７…ゲート電極、８…電荷移動
部、９…導線、１０…導線。2 ... Conductive wire, 3 ... Branch point, 4 ... Variable resistance part ... 5 ... Variable resistance part, 6 ... Gate electrode, 7 ... Gate electrode, 8 ... Charge transfer part, 9 ... Conductive wire, 10 ... Conductive wire.
Claims (8)
をもち、入力端子は導電体による導線でその先に分岐点
をもち、前記分岐点で複数の導線に分岐し、分岐した先
に各々ドープ量により導電性が変化する可変抵抗部分が
あり出力端子につながる構造を有し、可変抵抗部分への
ドープ量により入出力端子間に電圧を印加した場合の出
力電流を制御することを特徴とする電流制御素子。1. An input terminal, a branch point, and a plurality of output terminals, wherein the input terminal is a conductor made of a conductor and has a branch point at the end thereof, and the branch point is branched to a plurality of conductor wires. Each has a variable resistance part whose conductivity changes depending on the doping amount and has a structure connected to the output terminal.The output current when a voltage is applied between the input and output terminals is controlled by the doping amount to the variable resistance part. Characteristic current control element.
化するπ電子系化合物を使用することを特徴とする請求
項１記載の電流制御素子。2. The current control element according to claim 1, wherein the variable resistance portion is made of a π-electron compound whose conductivity is changed by doping.
にポリアセチレン，ポリパラフェニレンビニレン，ポリ
チオール，ポリピロール等のドープにより伝導度が変化
する導電性高分子を使用することを特徴とする電流制御
素子。3. The device according to claim 2, wherein the variable resistance portion is made of a conductive polymer whose conductivity is changed by doping with polyacetylene, polyparaphenylene vinylene, polythiol, polypyrrole or the like. element.
にＣ60，Ｃ70，ＬａＣ82，ＹＣ82，カーボンナノチュー
ブ等のドープにより伝導度が変化するフラーレン類を使
用することを特徴とする電流制御素子。4. A device according to claim 2, characterized by the use of fullerenes which changes conductivity by doping of C 60, C 70, LaC 82 , YC 82, such as carbon nanotubes variable resistor Current control element.
側にゲート電極を配置し、複数の可変抵抗部分間に電圧
により電荷の移動が可能な電荷移動部分をもち、ゲート
電極に印加する電圧量により電荷移動部分の電荷を動か
し、可変抵抗部へドープ量を変化させることを特徴とす
る電流制御素子。5. A gate electrode is arranged on both sides of a variable resistance portion of the element according to claim 3 and has a charge transfer portion capable of transferring charges by a voltage between a plurality of variable resistance portions, and the gate electrode is provided on the gate electrode. A current control element characterized in that a charge of a charge transfer portion is moved according to an applied voltage amount to change a doping amount to a variable resistance portion.
動部分に、ヨウ素，臭素などの電子供与体を使用するこ
とを特徴とする電流制御素子。6. The current control device according to claim 5, wherein an electron donor such as iodine or bromine is used in the charge transfer portion.
動部分に、ナトリウム，カリウム，ルビジウムなどの電
子受容体を使用することを特徴とする電流制御素子。7. The current control element according to claim 5, wherein an electron acceptor such as sodium, potassium or rubidium is used in the charge transfer portion.
抵抗部分間の電圧により電荷の移動が可能な部分に、チ
タン酸バリウムなどの強誘電体を使用することを特徴と
する電流制御素子。8. The current control element according to claim 5, wherein a ferroelectric material such as barium titanate is used in a portion where charges can be moved by a voltage between a plurality of variable resistance portions. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6410096A JPH09260635A (en) | 1996-03-21 | 1996-03-21 | Current control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6410096A JPH09260635A (en) | 1996-03-21 | 1996-03-21 | Current control device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09260635A true JPH09260635A (en) | 1997-10-03 |
Family
ID=13248329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6410096A Pending JPH09260635A (en) | 1996-03-21 | 1996-03-21 | Current control device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09260635A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003005451A1 (en) * | 2001-07-05 | 2003-01-16 | Nec Corporation | Field-effect transistor constituting channel by carbon nano tubes |
-
1996
- 1996-03-21 JP JP6410096A patent/JPH09260635A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003005451A1 (en) * | 2001-07-05 | 2003-01-16 | Nec Corporation | Field-effect transistor constituting channel by carbon nano tubes |
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