JPH09208934A - Composition for polishing and polishing of magnetic disk substrate - Google Patents
Composition for polishing and polishing of magnetic disk substrateInfo
- Publication number
- JPH09208934A JPH09208934A JP3417996A JP3417996A JPH09208934A JP H09208934 A JPH09208934 A JP H09208934A JP 3417996 A JP3417996 A JP 3417996A JP 3417996 A JP3417996 A JP 3417996A JP H09208934 A JPH09208934 A JP H09208934A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- magnetic disk
- fumed silica
- disk substrate
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、コンピュータ等の
記憶装置に使用される磁気ディスク基板、特にＮｉＰメ
ッキしたアルミディスク基板を高鏡面に研磨することが
でき、高密度な磁気ディスク基板を製造するのに適した
研磨用組成物及び磁気ディスク基板の研磨方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention makes it possible to polish a magnetic disk substrate used in a storage device such as a computer, especially an NiP-plated aluminum disk substrate to a high mirror surface, and to manufacture a high density magnetic disk substrate. And a method for polishing a magnetic disk substrate.
【０００２】[0002]
【従来の技術】従来、磁気ディスク基板、特にアルミデ
ィスク基板の研磨は、アルミナ微粒子に各種の研磨促進
剤を添加した研磨スラリーを使用する方法が一般的に採
られている。磁気ディスクの記憶密度の向上と共にアル
ミナ微粒子、研磨促進剤の改良が行われ、研磨面精度も
向上してきた。しかし、この方法によって達成される研
磨表面粗さは、Ｒａで１０Å程度である。最近に至り、
３．５インチ磁気ディスクで１ギガバイト以上の高密度
磁気ディスクに対応し得る基板が求められている。この
要求を達成するためには、研磨表面の平均面粗さＲａが
１０Å以下、望ましくは７Å以下であって、しかも従来
問題にならなかった微小の研磨痕やマイクロピット等の
表面欠陥を極少レベルにする必要がある。このような要
求に対し、前記のアルミナ微粒子をベースにした研磨ス
ラリーで研磨する従来法では前記の必要条件を満足し得
ない。2. Description of the Related Art Conventionally, for polishing a magnetic disk substrate, particularly an aluminum disk substrate, a method of using a polishing slurry prepared by adding various polishing accelerators to alumina fine particles is generally adopted. Along with the improvement of the storage density of the magnetic disk, the alumina fine particles and the polishing accelerator have been improved, and the polishing surface accuracy has also been improved. However, the polishing surface roughness achieved by this method is about 10Å in Ra. Recently,
There is a demand for a substrate capable of supporting a high density magnetic disk of 1 gigabyte or more with a 3.5 inch magnetic disk. In order to achieve this requirement, the average surface roughness Ra of the polished surface is 10 Å or less, preferably 7 Å or less, and the surface defects such as minute polishing marks and micropits which have not been a problem in the past are minimized. Need to In order to meet such requirements, the above-mentioned required conditions cannot be satisfied by the conventional method of polishing with the above-mentioned polishing slurry based on alumina fine particles.
【０００３】最近公開された特開平７−２４００２５号
公報には、コロイダルシリカに化学的腐食剤を添加した
スラリーを使った研磨方法が提案されている。この方法
に基づいて磁気ディスク基板を研磨すると、表面粗さＲ
ａは前記の必要条件を満足する。[0003] Recently published Japanese Patent Application Laid-Open No. 7-240025 proposes a polishing method using a slurry in which a chemical corrosive agent is added to colloidal silica. When the magnetic disk substrate is polished based on this method, the surface roughness R
a satisfies the above requirement.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、本発明
者らが前記特開平７−２４００２５号公報の方法を試行
したところ、アルミナ微粒子をベースにした従来法に比
較すると縁ダレが大きく、また研磨速度が極めて低いも
のであった。また、研磨後にリンス（洗浄）を行った
際、研磨機に残った研磨液のｐＨが中性域になるにつ
れ、ゲル化が急速に発生することが見出された。このよ
うなゲル化の発生は研磨パッドの目詰りを生じさせ、そ
の結果、研磨操作の継続が困難となるため、前記研磨速
度が低いこととあいまって実用的方法とは言えない。高
密度磁気ディスク基板の研磨方法は現在上記の状況にあ
り、工業的に採用し得る方法は見つかっていない。その
ため、高密度磁気ディスク基板に要求される前記研磨表
面アラサの必要条件を満足し、しかも形状精度が高く
（縁ダレが極めて小さく）、研磨速度が高い研磨方法の
開発が求められている。However, when the inventors of the present invention tried the method disclosed in Japanese Patent Laid-Open No. 7-240025, the edge sag was larger than that of the conventional method based on alumina fine particles, and the polishing rate was high. Was extremely low. It was also found that when rinsing (washing) was performed after polishing, gelation occurred rapidly as the pH of the polishing liquid remaining in the polishing machine became in the neutral range. The occurrence of such gelation causes clogging of the polishing pad, and as a result, it becomes difficult to continue the polishing operation. Therefore, it cannot be said to be a practical method in combination with the low polishing rate. The polishing method for the high-density magnetic disk substrate is currently in the above-mentioned situation, and no method that can be industrially adopted has been found. Therefore, there is a demand for development of a polishing method that satisfies the requirements for the polished surface roughness required for a high-density magnetic disk substrate, has a high shape accuracy (the edge sag is extremely small), and has a high polishing rate.
【０００５】[0005]
【課題を解決するための手段】かかる状況下に鑑み、本
発明者らは、前記特開平７−２４００２５号公報の方法
においてはゲル化の発生が継続的な研磨操作を困難にさ
せている点を見出し、ゲル化発生防止を重点に検討を行
い、工業的に採用可能であって、高密度磁気ディスク基
板に要求される研磨表面粗さＲａ１０Å以下で、微小の
研磨痕やマイクロピット等の表面欠陥を極少レベルにす
ることができ、さらには形状精度が高く（縁ダレが極め
て小さく）、研磨速度が高い研磨用組成物及び研磨方法
を検討した。本発明者らは、上記の目的を達成すべく鋭
意努力し、検討した結果、水、ヒュームドシリカ粒子、
硝酸アルミニウムからなる研磨スラリーに、ホスホン
酸、フェナントロリン、アセチルアセトンアルミニウム
塩の一種若しくは二種以上の混合物であるゲル化防止剤
を含有させてなることを特徴とする研磨用組成物を見出
した。In view of such circumstances, the present inventors have found that gelation in the method disclosed in Japanese Patent Laid-Open No. 7-240025 makes continuous polishing operation difficult. The present inventors have found that the surface roughness such as micro pits and micro pits, which is industrially applicable and has a polishing surface roughness Ra of 10 Å or less, which is required for a high-density magnetic disk substrate, has been studied. A polishing composition and a polishing method that can minimize defects, have high shape accuracy (edge sag is extremely small), and have a high polishing rate were studied. The present inventors have made diligent efforts to achieve the above-mentioned object, and as a result of investigation, water, fumed silica particles,
The present inventors have found a polishing composition characterized by comprising an anti-gelling agent which is a mixture of one or more of phosphonic acid, phenanthroline, and acetylacetone aluminum salt in a polishing slurry made of aluminum nitrate.
【０００６】[0006]
【発明の実施の形態】本発明に用いるヒュームドシリカ
粒子は、揮発性シラン化合物（一般には四塩化ケイ素が
用いられる。）を酸素と水素の混合ガスの炎の中（１０
００℃内外）で加水分解させたもので、極めて微細で高
純度なシリカ粒子である。例えばイオン交換法（ケイ酸
ナトリウムとカチオン交換樹脂とを反応させて得た超微
粒シリカを粒子成長させて作る。）などで得られるコロ
イダルシリカと比べると、コロイダルシリカが個々に分
散した一次粒子として存在するのに対し、ヒュームドシ
リカは数ｎｍ〜１００ｎｍ程度の一次粒子が多数凝集し
て鎖状につながり０．１〜１０μｍの二次粒子を形成し
ている。この二次粒子の形成により研磨パッドヘの保持
力が高くなり、研磨レートを飛躍的に向上することがで
きる。上記ヒュームドシリカは一次粒子の平均粒子径が
５〜１２０ｎｍであることが好ましい。平均粒子径が５
ｎｍ未満では加工レートが著しく低く、また１２０ｎｍ
より大きい粒子は工業的に安定に製造することが難しい
という傾向があるからである。また、ヒュームドシリカ
の研磨スラリーへの添加量は、１〜４０重量％が望まし
い。添加量が１重量％未満では研磨レー卜が著しく低
く、また４０重量％を越えても研磨レートの向上が見ら
れないだけでなく、ゲル化し易くなる傾向があるからで
ある。BEST MODE FOR CARRYING OUT THE INVENTION The fumed silica particles used in the present invention contain a volatile silane compound (generally silicon tetrachloride is used) in a flame of a mixed gas of oxygen and hydrogen (10).
Hydrolyzed at (inside and outside of 00 ° C.), which are extremely fine and highly pure silica particles. Compared with colloidal silica obtained by, for example, ion exchange method (ultrafine silica obtained by reacting sodium silicate and cation exchange resin is made to grow), as compared with colloidal silica obtained as primary particles in which colloidal silica is individually dispersed. Whereas, in the fumed silica, a large number of primary particles of about several nm to 100 nm are aggregated and connected in a chain to form secondary particles of 0.1 to 10 μm. By the formation of the secondary particles, the holding power on the polishing pad is increased, and the polishing rate can be dramatically improved. The fumed silica preferably has an average primary particle size of 5 to 120 nm. Average particle size is 5
If it is less than nm, the processing rate is remarkably low, and it is 120 nm.
This is because larger particles tend to be difficult to produce industrially stably. Further, the amount of fumed silica added to the polishing slurry is preferably 1 to 40% by weight. This is because if the addition amount is less than 1% by weight, the polishing rate is remarkably low, and if it exceeds 40% by weight, not only the polishing rate is not improved but also gelation tends to occur.
【０００７】本発明に用いる硝酸アルミニウム（Ａｌ
（ＮＯ3 ）3 ・９Ｈ2 Ｏ）は、研磨促進剤としての働き
があり、添加量は０．１〜２０重量％が望ましく、最も
好ましい添加量は１〜２０重量％である。添加量が０．
１重量％未満ではその機能が充分に果たされず、２０重
量％を越えるとよりゲル化し易くなる傾向があるからで
ある。また、硝酸アルミニウムの他に、硝酸を添加して
も良い。硝酸は硝酸アルミニウムの研磨促進剤としての
効果を更に向上させる効果、ｐＨ調整剤としてヒューム
ドシリカのゲル化を防止させる効果がある。Aluminum nitrate (Al used in the present invention
(NO 3) 3 · 9H 2 O) , there is the action of the polishing accelerator, the addition amount is desirably 0.1 to 20 wt%, the most preferred amount is 1 to 20% by weight. The amount added is 0.
This is because if it is less than 1% by weight, its function is not sufficiently fulfilled, and if it exceeds 20% by weight, gelation tends to occur more easily. In addition to aluminum nitrate, nitric acid may be added. Nitric acid has the effect of further improving the effect of aluminum nitrate as a polishing accelerator and the effect of preventing gelation of fumed silica as a pH adjuster.
【０００８】本発明に用いるゲル化防止剤がホスホン
酸、フェナントロリン、アセチルアセトンアルミニウム
塩の一種若しくは二種以上の混合物であることは既に説
明した通りであるが、より具体的には、ホスホン酸とし
ては１−ヒドロキシエチリデン−１，１−ジホスホン酸
（Ｃ2 Ｈ6 Ｏ7 Ｐ2 ）若しくはアミノトリメチレンホス
ホン酸（Ｃ2 Ｈ12Ｏ9 Ｐ3 Ｎ）を、フェナントロリンと
しては１，１０−フェナントロリン一水和物（Ｃ12Ｈ8
Ｎ2 ・Ｈ2 Ｏ）を、アセチルアセトンアルミニウム塩と
してはアセチルアセトンのアルミニウム錯塩（Ａｌ〔Ｃ
Ｈ（ＣＯＣＨ3 ）3 〕）をそれぞれ例示することができ
る。また、含有量は０．１〜１０重量％が望ましいが、
前記フェームドシリカの濃度（添加量）、粒子径及びｐ
Ｈさらに前記ゲル化防止剤の種類によって最適添加量が
異なるので、実際はそれぞれの組成に合わせてその添加
量を調節する必要がある。ゲル化防止剤は、添加量が少
なすぎて例えば０．１重量％未満であるとゲル化防止効
果が表われず、多すぎて例えば１０重量％を越えるとそ
れ自身の働きでゲル化を引き起こしてしまうので、添加
量調整には注意が必要である。As described above, the gelling agent used in the present invention is one kind or a mixture of two or more kinds of phosphonic acid, phenanthroline and acetylacetone aluminum salt. More specifically, the phosphonic acid is 1-hydroxyethylidene-1,1-diphosphonic acid (C 2 H 6 O 7 P 2) or amino trimethylene phosphonic acid (C 2 H 12 O 9 P 3 N), as the phenanthroline 1,10-phenanthroline monohydrate Japanese products (C 12 H 8
N 2 · H 2 O) as an aluminum acetylacetone aluminum salt, an aluminum complex salt of acetylacetone (Al [C
H (COCH 3 ) 3 ]) can be exemplified. Further, the content is preferably 0.1 to 10% by weight,
Concentration (addition amount), particle size and p of the above-mentioned famed silica
Further, since the optimum addition amount differs depending on the type of H and the gelation inhibitor, it is actually necessary to adjust the addition amount according to each composition. When the amount of the gelling agent added is too small, for example, less than 0.1% by weight, the gelation preventing effect is not exhibited, and when it is too large, for example, more than 10% by weight, gelation occurs by itself. Therefore, it is necessary to be careful when adjusting the addition amount.
【０００９】前記各成分からなる本発明の研磨用組成物
において、前記フェームドシリカ粒子の表面には−Ｓｉ
ＯＨ基及び−ＯＨ- イオンが存在し、アルカリイオンに
より電気二重層が形成され、粒子間の反発力により安定
化しているが、前記硝酸アルミニウムを研磨促進剤とし
て添加すると研磨促進効果が付与される反面、アルミニ
ウムイオンが表面電荷に干渉し、バランスが崩れ、粒子
どうしが接触してゲル化が起こる。しかし、前記ホスホ
ン酸、フェナントロリン、アセチルアセトンアルミニウ
ム塩を硝酸アルミニウムを添加する前に添加しておく
と、アルミニウムイオンの緩衝を防止し、その結果ゲル
化を防ぐことができるのである。In the polishing composition of the present invention comprising each of the above-mentioned components, -Si is formed on the surface of the famed silica particles.
OH groups and -OH - ion present, the electric double layer is formed by alkali ions, although stabilized by repulsive forces between the particles, the polishing accelerating effect is imparted upon the addition of the aluminum nitrate as a polishing accelerator On the other hand, aluminum ions interfere with the surface charge, resulting in imbalance and gelation due to contact between particles. However, if the phosphonic acid, phenanthroline, and acetylacetone aluminum salt are added before the addition of aluminum nitrate, the buffering of aluminum ions can be prevented, and as a result, gelation can be prevented.
【００１０】尚、本発明の研磨用組成物は、前記の各成
分の他に、界面活性剤、分散剤、防腐剤、安定化剤、及
びｐＨ調整のための酸又はアルカリ剤を含有しても良
い。しかし、その種類及び添加量はゲル化を引き起こさ
ないよう細心の注意が必要である。The polishing composition of the present invention contains a surfactant, a dispersant, a preservative, a stabilizer, and an acid or alkali agent for pH adjustment, in addition to the above components. Is also good. However, it is necessary to pay close attention to the kind and amount of addition so as not to cause gelation.
【００１１】[0011]
【実施例】公称３．５”（φ９５ｍｍ）ＮｉＰメッキし
たディスクを表１に示す組成の実施例８種及び比較例３
種の研磨用組成物を用い、以下に示す研磨条件で研磨
し、その研磨性能について測定した。研磨性能の測定方
法は表３に示す。 （研磨条件） 研磨機；４ウェイ式両面ポリッシングマシン（定盤径φ
６４０ｍｍ） 研磨パッド；スエードタイプ（ポリテックスＤＧ ロデ
ール（株）製） 下定盤回転数；６０ｒｐｍ スラリー供給量；３０ｍｌ／ｍｉｎ 研磨時間；５分間 加工圧力；５０ｇ／ｃｍ2 尚、表１には研磨砥粒、ゲル化防止剤の種類及び添加量
を記載したが、全ての研磨用組成物に５重量％の硝酸ア
ルミニウムを添加し、残部を水とした。また、スラリー
性状についても表３に示す測定方法に沿って測定した。
さらに、研磨後の基板上に直流スパッタ装置で厚さ１０
０ｎｍのＣｒ層、厚さ４０ｎｍのＣｏ86Ｃｒ12Ｔａ2 磁
性層及び厚さ２５ｎｍのカーボン保護膜を成膜し、最後
に潤滑剤を２ｎｍの厚さに塗布してそれぞれ磁気ディス
クを作製した。これらの磁気ディスクの磁気特性につい
ても表３に示す測定方法に沿って測定した。全ての結果
（研磨性能、スラリー性状、磁気特性）については、表
２に示した。EXAMPLE Nominal 3.5 ″ (φ95 mm) NiP-plated disks having the composition shown in Table 1 were used in Example 8 and Comparative Example 3.
Polishing was performed under the polishing conditions shown below using one of the polishing compositions, and the polishing performance was measured. Table 3 shows the method of measuring the polishing performance. (Polishing conditions) Polishing machine: 4-way double-sided polishing machine (Plate diameter φ
640 mm) Polishing pad; Suede type (manufactured by Polytex DG Rodel Co., Ltd.) Lower platen rotation speed; 60 rpm Slurry supply amount; 30 ml / min Polishing time; 5 minutes Processing pressure; 50 g / cm 2 Although the types and amounts of the particles and the antigelling agent were described, 5% by weight of aluminum nitrate was added to all the polishing compositions, and the balance was water. The slurry properties were also measured according to the measurement method shown in Table 3.
Further, the thickness of the polished substrate is 10
A 0 nm Cr layer, a 40 nm thick Co 86 Cr 12 Ta 2 magnetic layer and a 25 nm thick carbon protective film were formed, and finally a lubricant was applied to a thickness of 2 nm to form magnetic disks. The magnetic characteristics of these magnetic disks were also measured according to the measuring method shown in Table 3. All results (polishing performance, slurry properties, magnetic properties) are shown in Table 2.
【００１２】[0012]
【表１】 [Table 1]
【００１３】[0013]
【表２】 [Table 2]
【００１４】[0014]
【表３】 [Table 3]
【００１５】前記表２より明らかなように、比較例１の
アルミナを使用した研磨用組成物では、研磨速度は高い
ものの表面粗さが大きいため、高密度磁気ディスク基板
用の研磨には適さないものであった。また、コロイダル
シリカ、ヒュームドシリカにゲル化防止剤を使用しない
比較例２，３の研磨用組成物では、何れもゲル化現象が
確認された。これに対し、１−ヒドロキシエチリデン−
１，１−ジホスホン酸、アミノトリメチレンホスホン
酸、１，１０−フェナントロリン一水和物、アセチルア
セトンアルミニウム塩を添加した実施例１〜７の研磨用
組成物で研磨したところ、ゲル化防止剤の添加効果によ
りゲル化は発生しなかった。また、ゲル化防止剤を添加
したことによる研磨速度、研磨表面精度（表面粗さ、研
磨痕、縁ダレ）、磁気ディスクとしての性能（表面欠
陥、グライドテスト、サーティファイヤーテスト）の低
下は見られなかった。As is clear from Table 2, the polishing composition using alumina of Comparative Example 1 is not suitable for polishing a high-density magnetic disk substrate because the polishing rate is high but the surface roughness is large. It was a thing. Further, in the polishing compositions of Comparative Examples 2 and 3 in which the gelling inhibitor was not used for colloidal silica and fumed silica, the gelation phenomenon was confirmed in all cases. On the other hand, 1-hydroxyethylidene-
After polishing with the polishing composition of Examples 1 to 7 to which 1,1-diphosphonic acid, aminotrimethylenephosphonic acid, 1,10-phenanthroline monohydrate and acetylacetone aluminum salt were added, an anti-gelling agent was added. No gelation occurred due to the effect. In addition, the addition of an anti-gelling agent showed a decrease in polishing rate, polishing surface accuracy (surface roughness, polishing marks, edge sag), and magnetic disk performance (surface defects, glide test, certifier test). I didn't.
【００１６】以上本発明の実施例を記載したが、本発明
は前記実施例に限定されるものではなく、特許請求の範
囲に記載の構成を変更しない限りどのようにでも実施す
ることができる。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments and can be implemented in any manner as long as the configuration described in the claims is not changed.
【００１７】[0017]
【発明の効果】以上説明したように本発明の研磨用組成
物及び研磨方法は、高密度磁気ディスク基板に要求され
る研磨表面粗さＲａ１０Å以下で、微小の研磨痕やマイ
クロピット等の表面欠陥を極少レベルにした研磨面を得
ることができ、研磨パッドの目詰りなどを生ずることが
なく、継続的に研磨操作を行うことができる。しかも形
状精度が高く（縁ダレが極めて小さく）、高速で研磨す
ることができる。したがって、本発明は、コンピュータ
等の記憶装置に使用される磁気ディスク基板、特に高密
度な磁気ディスク基板を製造するのに適している。As described above, the polishing composition and the polishing method of the present invention have a polishing surface roughness Ra of 10 Å or less required for a high-density magnetic disk substrate and have surface defects such as minute polishing marks and micropits. It is possible to obtain a polishing surface with a minimal level, and it is possible to continuously perform the polishing operation without causing clogging of the polishing pad. Moreover, the shape accuracy is high (the edge sag is extremely small), and polishing can be performed at high speed. Therefore, the present invention is suitable for manufacturing a magnetic disk substrate used for a storage device such as a computer, particularly a high-density magnetic disk substrate.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/304 ３２１ Ｈ０１Ｌ 21/304 ３２１ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI Technical display location H01L 21/304 321 H01L 21/304 321
Claims (9)
組成物において、水、ヒュームドシリカ、硝酸アルミニ
ウム及びゲル化防止剤からなることを特徴とする研磨用
組成物。1. A polishing composition for mirror-polishing a magnetic disk substrate, which comprises water, fumed silica, aluminum nitrate and an anti-gelling agent.
（四塩化ケイ素）の酸水素炎中における加水分解によっ
て製造される無定形の微粒子ケイ酸であることを特徴と
する請求項１に記載の研磨用組成物。2. The polishing according to claim 1, wherein the fumed silica is amorphous fine particle silicic acid produced by hydrolysis of a volatile silane compound (silicon tetrachloride) in an oxyhydrogen flame. Composition.
均径で５〜１２０ｎｍであることを特徴とする請求項２
に記載の研磨用組成物。3. The average particle size of fumed silica primary particles is 5 to 120 nm.
The polishing composition according to.
％であることを特徴とする請求項２又は３に記載の研磨
用組成物。4. The weight ratio of fumed silica is 1 to 40.
%, And the polishing composition according to claim 2 or 3.
２０％であることを特徴とする請求項１〜４のいずれか
一項に記載の研磨用組成物。5. The weight ratio of aluminum nitrate is 0.1 to 0.1.
It is 20%, The polishing composition as described in any one of Claims 1-4.
ることを特徴とする請求項１〜５のいずれか一項に記載
の研磨用組成物。6. The polishing composition according to any one of claims 1 to 5, wherein nitric acid is used in combination with aluminum nitrate.
ロリン、アセチルアセトアルミニウム塩の一種若しくは
二種以上の混合物であることを特徴とする請求項１〜６
のいずれか一項に記載の研磨用組成物。7. The anti-gelling agent is one or a mixture of two or more of phosphonic acid, phenanthroline, and acetylacetoaluminum salt.
The polishing composition according to any one of 1.
％であることを特徴とする請求項１〜７のいずれか一項
に記載の研磨用組成物。8. The weight ratio of the gelling inhibitor is 0.1-10.
%, And the polishing composition according to any one of claims 1 to 7.
おいて、請求項１〜８のいずれか一項に記載の研磨用組
成物を用いて研磨することを特徴とする磁気ディスク基
板の研磨方法。9. A method of polishing a magnetic disk substrate, which comprises polishing with the polishing composition according to claim 1 in a method for mirror-polishing a magnetic disk substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3417996A JP3825827B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3417996A JP3825827B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09208934A true JPH09208934A (en) | 1997-08-12 |
| JP3825827B2 JP3825827B2 (en) | 2006-09-27 |
Family
ID=12406992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3417996A Expired - Fee Related JP3825827B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3825827B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001207161A (en) * | 2000-01-24 | 2001-07-31 | Showa Denko Kk | Composition for abrading magnetic disk substrate |
| WO2001079377A1 (en) * | 2000-04-17 | 2001-10-25 | Showa Denko K.K. | Composition for use in polishing magnetic disk substrate and method for preparing the same |
| JP2003183630A (en) * | 2001-12-20 | 2003-07-03 | Fujimi Inc | Polishing composition |
| US6620216B2 (en) | 2001-08-21 | 2003-09-16 | Kao Corporation | Polishing composition |
| JP2004067897A (en) * | 2002-08-07 | 2004-03-04 | Kao Corp | Roll-off reducing agent |
| US6818031B2 (en) | 2001-04-27 | 2004-11-16 | Kao Corporation | Polishing composition |
| KR100614567B1 (en) * | 1999-12-10 | 2006-08-25 | 에포크 머티리얼 컴퍼니, 리미티드 | Chemical mechanical abrasive composition for use in semiconductor processing |
| WO2008078666A1 (en) * | 2006-12-27 | 2008-07-03 | Showa Denko K.K. | Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
| JP2008155368A (en) * | 1999-06-23 | 2008-07-10 | Jsr Corp | Polishing composition and polishing method |
-
1996
- 1996-01-30 JP JP3417996A patent/JP3825827B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008155368A (en) * | 1999-06-23 | 2008-07-10 | Jsr Corp | Polishing composition and polishing method |
| KR100614567B1 (en) * | 1999-12-10 | 2006-08-25 | 에포크 머티리얼 컴퍼니, 리미티드 | Chemical mechanical abrasive composition for use in semiconductor processing |
| JP2001207161A (en) * | 2000-01-24 | 2001-07-31 | Showa Denko Kk | Composition for abrading magnetic disk substrate |
| WO2001079377A1 (en) * | 2000-04-17 | 2001-10-25 | Showa Denko K.K. | Composition for use in polishing magnetic disk substrate and method for preparing the same |
| US6818031B2 (en) | 2001-04-27 | 2004-11-16 | Kao Corporation | Polishing composition |
| US6620216B2 (en) | 2001-08-21 | 2003-09-16 | Kao Corporation | Polishing composition |
| CN100390245C (en) * | 2001-08-21 | 2008-05-28 | 花王株式会社 | Polishing composition |
| JP2003183630A (en) * | 2001-12-20 | 2003-07-03 | Fujimi Inc | Polishing composition |
| JP2004067897A (en) * | 2002-08-07 | 2004-03-04 | Kao Corp | Roll-off reducing agent |
| WO2008078666A1 (en) * | 2006-12-27 | 2008-07-03 | Showa Denko K.K. | Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
| JP2008166329A (en) * | 2006-12-27 | 2008-07-17 | Showa Denko Kk | Aqueous polishing slurry for polishing silicon carbide single crystal substrate and polishing method |
| JP4523935B2 (en) * | 2006-12-27 | 2010-08-11 | 昭和電工株式会社 | An aqueous polishing slurry for polishing a silicon carbide single crystal substrate and a polishing method. |
| KR101110682B1 (en) * | 2006-12-27 | 2012-02-16 | 쇼와 덴코 가부시키가이샤 | Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
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| JP3825827B2 (en) | 2006-09-27 |
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