JPH09167752A - Method and device for chemical solution treatment - Google Patents
Method and device for chemical solution treatmentInfo
- Publication number
- JPH09167752A JPH09167752A JP32556195A JP32556195A JPH09167752A JP H09167752 A JPH09167752 A JP H09167752A JP 32556195 A JP32556195 A JP 32556195A JP 32556195 A JP32556195 A JP 32556195A JP H09167752 A JPH09167752 A JP H09167752A
- Authority
- JP
- Japan
- Prior art keywords
- impurities
- chemical
- impurity removing
- liquid
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Treatment Of Liquids With Adsorbents In General (AREA)
- Electrostatic Separation (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体の製造過程
における半導体基板の薬液処理を行う装置および薬液処
理方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for chemical treatment of a semiconductor substrate in a semiconductor manufacturing process.
【０００２】[0002]
【従来の技術】半導体の製造工程では、半導体基板（以
下、基板と称す）表面に微細な素子を形成するため、清
浄な基板表面が必要となる。このため基板の洗浄工程で
は、高純度な各種の酸・アルカリ溶液を用いて洗浄を行
う。従来の洗浄装置は、例えば図３に示すように、基板
１を例えばアンモニア水／過酸化水素水の混合液などの
アルカリ性溶液から成る洗浄液２に浸漬して洗浄する処
理槽３を内槽３ａと外槽３ｂとの二重構造とし、内槽３
ａから外槽３ｂにオーバーフローした洗浄液２をエア駆
動式ポンプ４によって循環して樹脂フィルタ５（以下、
フィルタ５と称す）を経て内槽３ａに還流させるように
した装置が知られている。フィルタ５では洗浄液２中に
含まれる粒径０．０５〜０．１μｍ以上の粒子状不純物
を除去する。2. Description of the Related Art In the manufacturing process of semiconductors, fine elements are formed on the surface of a semiconductor substrate (hereinafter referred to as a substrate), so that a clean substrate surface is required. Therefore, in the substrate cleaning step, cleaning is performed using various highly pure acid / alkali solutions. In a conventional cleaning apparatus, for example, as shown in FIG. 3, a processing tank 3 for cleaning a substrate 1 by immersing the substrate 1 in a cleaning liquid 2 composed of an alkaline solution such as a mixed solution of ammonia water / hydrogen peroxide solution is called an inner tank 3a. Double structure with outer tank 3b, inner tank 3
The cleaning liquid 2 overflowing from a to the outer tub 3b is circulated by the air-driven pump 4 and the resin filter 5 (hereinafter,
A device is known in which the inner tank 3a is caused to flow back through a filter 5). The filter 5 removes particulate impurities contained in the cleaning liquid 2 and having a particle size of 0.05 to 0.1 μm or more.
【０００３】また、近年の半導体装置の微細化により、
より清浄な基板表面を形成できる洗浄装置が要求され、
フィルタ５の孔径以下の例えば粒径０．０５μｍ以下の
微小な粒子状不純物（以下、微粒子不純物と称す）やメ
タル不純物が除去できる不純物除去装置を備えた洗浄装
置も考案されている。図４は例えば特開平４−６１３２
９号公報記載の不純物除去装置６を示す構成図であり、
図に示すように、導電性材料から成る吸着板７に電位を
加え、洗浄液２中の電荷を帯びた不純物８を吸着板７に
吸着させて捕獲するものである。Further, due to recent miniaturization of semiconductor devices,
A cleaning device that can form a cleaner substrate surface is required,
A cleaning device provided with an impurity removing device capable of removing fine particulate impurities (hereinafter referred to as fine particle impurities) and metal impurities having a pore diameter of the filter 5 or less, for example, a particle diameter of 0.05 μm or less, has also been devised. FIG. 4 shows, for example, Japanese Patent Laid-Open No. 4-6132.
It is a block diagram which shows the impurity removal apparatus 6 of the 9th publication.
As shown in the figure, a potential is applied to the adsorption plate 7 made of a conductive material, and the charged impurities 8 in the cleaning liquid 2 are adsorbed by the adsorption plate 7 and captured.
【０００４】このような不純物除去装置６を図３に示す
ような洗浄装置における洗浄液２の循環系に備えること
により、微粒子不純物およびメタル不純物も除去でき
る。ここで、洗浄液２中で粒子状不純物は表面に電荷を
帯びた層が形成され、また、Ａｌ、Ｆｅ、Ｃｕなどの各
種メタル不純物も正あるいは負の電荷を帯びているた
め、フィルタ５を通過した微粒子不純物およびメタル不
純物は電荷を帯びた不純物８として除去される。By providing such an impurity removing device 6 in the circulation system of the cleaning liquid 2 in the cleaning device as shown in FIG. 3, fine particle impurities and metal impurities can also be removed. Here, a layer having a charge is formed on the surface of the particulate impurities in the cleaning liquid 2, and various metal impurities such as Al, Fe, and Cu also have a positive or negative charge, and thus pass through the filter 5. The formed fine particle impurities and metal impurities are removed as charged impurities 8.
【０００５】[0005]
【発明が解決しようとする課題】従来の洗浄装置は以上
のように構成されているため、洗浄液２が不純物除去装
置６内を流れる間に、洗浄液２中の微粒子不純物および
メタル不純物を吸着板７に吸着させて捕獲するものであ
る。この不純物除去装置６による不純物の捕獲は、フィ
ルタ５のように網目で捕獲するものと違い、微粒子不純
物およびメタル不純物を完全に捕獲することは難しく、
一部は通過してしまうものであった。また、基板１の洗
浄を繰り返し行うことにより、吸着板７には吸着された
不純物が増加するが、さらにその状態で不純物の捕獲を
続けることになり、捕獲率は徐々に低下するものであっ
た。このため洗浄液２中には微粒子不純物およびメタル
不純物等の不純物が蓄積され、その不純物が基板１表面
に付着して基板１を再汚染させてしまうという問題点が
あった。Since the conventional cleaning device is configured as described above, while the cleaning liquid 2 flows through the impurity removing device 6, the particulate plate 7 and the metal impurities in the cleaning liquid 2 are adsorbed on the adsorption plate 7. It is adsorbed on and captured. It is difficult for the impurity removing device 6 to capture the impurities completely unlike the filter 5 in which the impurities are captured by a mesh like the filter 5,
Some passed. Further, by repeating the cleaning of the substrate 1, the amount of impurities adsorbed on the adsorption plate 7 increases, but the impurities are further trapped in this state, and the trapping ratio gradually decreases. . Therefore, there is a problem that impurities such as fine particle impurities and metal impurities are accumulated in the cleaning liquid 2, and the impurities adhere to the surface of the substrate 1 to recontaminate the substrate 1.
【０００６】図５は洗浄液２中の各種メタル不純物濃度
と、そのメタル不純物の基板１への付着量との相関を示
すグラフである。このような基板１の再汚染を防止する
ため、従来は頻繁に洗浄液２を新しく交換したり、不純
物除去装置６を取り換える必要があった。FIG. 5 is a graph showing the correlation between the concentration of various metal impurities in the cleaning liquid 2 and the amount of the metal impurities deposited on the substrate 1. In order to prevent such recontamination of the substrate 1, it has conventionally been necessary to frequently replace the cleaning liquid 2 with a new one or replace the impurity removing device 6.
【０００７】この発明は、以上のような問題点を解消す
るためになされたものであって、基板の洗浄装置等の薬
液処理装置において、薬液の清浄度を容易に安価に保持
できて、薬液中の不純物による基板表面の再汚染を有効
に防止することを目的とする。The present invention has been made to solve the above problems, and in a chemical treatment apparatus such as a substrate cleaning apparatus, the cleanliness of the chemical can be easily maintained at a low cost, The purpose is to effectively prevent recontamination of the substrate surface due to impurities therein.
【０００８】[0008]
【課題を解決するための手段】この発明の請求項１に係
わる薬液処理装置は、薬液を循環させる機構と、上記薬
液の循環系に配設され、導電性材料から成る吸着板に電
位を与えて不純物を吸着することによって、上記薬液中
の不純物を除去する不純物除去装置と、上記不純物除去
装置を上記薬液の循環系から切り離し、上記吸着板に吸
着した不純物を脱離させて上記不純物除去装置を再生す
る機構と、を備えたものである。According to a first aspect of the present invention, there is provided a chemical solution treating apparatus, wherein a mechanism for circulating a chemical solution and a circulation system for the chemical solution are provided to apply an electric potential to an adsorption plate made of a conductive material. The impurity removing device for removing impurities in the chemical liquid by adsorbing the impurities by disconnecting the impurity removing device from the circulation system of the chemical liquid, and desorbing the impurities adsorbed on the adsorption plate to remove the impurities. And a mechanism for reproducing.
【０００９】この発明の請求項２に係わる薬液処理装置
は、薬液中の粒子状不純物を除去するフィルタを、上記
薬液の循環系の不純物除去装置の入口側に備えたもので
ある。The chemical solution treating apparatus according to a second aspect of the present invention is provided with a filter for removing particulate impurities in the chemical solution on the inlet side of the impurity removing apparatus of the chemical solution circulating system.
【００１０】この発明の請求項３に係わる薬液処理装置
は、複数の不純物除去装置を並列に備え、上記複数の不
純物除去装置を交替に薬液の循環系に用いて、上記薬液
中の不純物を除去し、上記薬液中の不純物除去と上記不
純物除去装置の再生とを同時進行で処理可能にしたもの
である。A chemical treatment apparatus according to a third aspect of the present invention is provided with a plurality of impurity removing devices in parallel, and the plurality of impurity removing devices are alternately used in a chemical liquid circulation system to remove impurities in the chemical liquid. However, the removal of impurities in the chemical liquid and the regeneration of the impurity removal device can be performed simultaneously.
【００１１】この発明の請求項４に係わる薬液処理装置
は、不純物除去装置を再生する機構に、吸着板に吸着し
た不純物を液中に脱離させる再生液の供給装置と、使用
済みの上記再生液を置換する純水あるいはエアーの供給
装置とを備えたものである。According to a fourth aspect of the present invention, there is provided a chemical liquid treatment device, wherein a mechanism for regenerating the impurity removing device has a regenerator supply device for desorbing impurities adsorbed by the adsorption plate into the liquid, and the used regenerating device. A device for supplying pure water or air for replacing the liquid is provided.
【００１２】この発明の請求項５に係わる薬液処理装置
は、再生液に酸性溶液あるいは上記酸性溶液に酸化剤を
混合した溶液を用いるものである。The chemical solution treating apparatus according to a fifth aspect of the present invention uses an acidic solution as a regenerating solution or a solution obtained by mixing the acidic solution with an oxidizing agent.
【００１３】この発明の請求項６に係わる薬液処理装置
は、不純物処理装置が、耐薬品性の筒状の壁面と、この
筒状の壁面内に導電性材料から成り電圧を印加できる２
ヶの相対向する櫛状の吸着板とを有し、上記２ヶの櫛状
の吸着板の櫛の歯に当たる部分の複数の板が互い違いに
交互に配設されたものである。In the chemical liquid processing apparatus according to claim 6 of the present invention, the impurity processing apparatus comprises a chemical-resistant cylindrical wall surface, and a voltage is applied to the cylindrical wall surface made of a conductive material.
A plurality of comb-shaped suction plates opposed to each other, and a plurality of plates corresponding to comb teeth of the two comb-shaped suction plates are alternately arranged.
【００１４】この発明の請求項７に係わる薬液処理装置
は、不純物除去装置が耐薬品性の筒状の壁面と、この筒
状の壁面内に導電性材料から成り電圧を印加できる吸着
板とを有し、上記吸着板表面が凹凸状であるものであ
る。According to a seventh aspect of the present invention, in the chemical solution treating apparatus, the impurity removing apparatus comprises a chemical-resistant cylindrical wall surface and an adsorption plate made of a conductive material and capable of applying a voltage in the cylindrical wall surface. In addition, the surface of the suction plate is uneven.
【００１５】この発明の請求項８に係わる薬液処理方法
は、再生液供給時に、不純物除去装置の吸着板に、不純
物吸着時と正負逆の電位を与えて、吸着していた不純物
を上記再生液中に脱離させるものである。In the chemical treatment method according to the eighth aspect of the present invention, when the regenerant is supplied, the adsorbing plate of the impurity removing device is applied with a positive and negative electric potential opposite to that at the time of adsorbing the impurities to adsorb the adsorbed impurities into the regenerant. It is to be detached inside.
【００１６】[0016]
実施の形態１．以下、この発明の実施の形態１を図につ
いて説明する。なお、従来の技術と重複する箇所は適宜
その説明を省略する。図１はこの発明の実施の形態１に
よる薬液処理装置としての洗浄装置を示す構成図であ
る。図において、１〜５は従来のものと同じもので特に
２は薬液としての洗浄液、９ａ，９ｂは洗浄液２の循環
系に並列に２ケ備えられ、微粒子不純物およびメタル不
純物等の電荷を帯びた不純物を除去する不純物除去装
置、１０は不純物除去装置９ａ，９ｂに接続され、電位
を調整するためのコントローラ、１１は不純物除去装置
９ａ，９ｂを再生処理するための再生液供給装置、１２
は同じく不純物除去装置９ａ，９ｂを再生処理する際に
用いる純水の供給装置、１３はパージ用エアーの供給装
置である。１４〜１８は配管に設けられたバルブで、１
４ａ，１４ｂはそれぞれ洗浄液２が通る配管の不純物除
去装置９ａ，９ｂの前後に設けられたバルブ、１５ａ，
１５ｂはそれぞれ再生処理のための配管の不純物除去装
置９ａ，９ｂの前後に設けられたバルブ、１６は再生液
の供給を制御するバルブ、１７は純水の供給を制御する
バルブ、１８はパージ用エアーの供給を制御するバルブ
であり、１９は再生処理に用いた再生液および純水の廃
液口である。Embodiment 1 FIG. Embodiment 1 of the present invention will be described below with reference to the drawings. Note that the description of the same parts as those of the conventional technique will be appropriately omitted. 1 is a configuration diagram showing a cleaning device as a chemical liquid processing device according to a first embodiment of the present invention. In the figure, 1 to 5 are the same as the conventional ones, particularly 2 is a cleaning liquid as a chemical liquid, and 9a and 9b are provided in parallel in the circulation system of the cleaning liquid 2 and are charged with charges such as fine particle impurities and metal impurities. Impurity removing device for removing impurities, 10 is a controller connected to the impurity removing devices 9a, 9b for adjusting the potential, 11 is a regenerant supply device for regenerating the impurity removing devices 9a, 9b, 12
Is a pure water supply device used when regenerating the impurity removing devices 9a and 9b, and 13 is a purge air supply device. 14 to 18 are valves provided in the pipe,
4a and 14b are valves provided before and after the impurity removing devices 9a and 9b of the pipe through which the cleaning liquid 2 passes, and 15a and
Reference numeral 15b is a valve provided in front of and behind the impurity removing devices 9a and 9b of the pipe for the regenerating process, 16 is a valve for controlling the supply of the regenerant, 17 is a valve for controlling the supply of pure water, and 18 is for purging. A valve that controls the supply of air, and 19 is a waste liquid port for the regenerating liquid and pure water used in the regenerating process.
【００１７】図２は不純物除去装置９ａ，９ｂの構造を
示す断面図で、図２（ａ）は全体の縦方向断面図、図２
（ｂ）は図２（ａ）におけるＡ−Ａ線による断面図、図
２（ｃ）は図２（ａ）におけるＢ−Ｂ線による断面図で
ある。図において、２０は耐薬品性の樹脂から成る筒状
の壁面（以下、樹脂筒と称す）、２１ａ，２１ｂは樹脂
筒２０内部に設置され、例えばケイ素、あるいはケイ素
化合物等の導電性材料から成る吸着板で、それぞれコン
トローラ１０に接続され（図１参照）電圧を印加するこ
とによって電荷を帯びた不純物を吸着するものである。
図２に示すように、樹脂筒２０内部には２ケの櫛状の吸
着板２１ａ，２１ｂが向かい合い、この櫛状の吸着板２
１ａ，２１ｂの櫛の歯に当たる部分の複数の板が互い違
いに交互に配設される。FIG. 2 is a sectional view showing the structure of the impurity removing devices 9a and 9b. FIG. 2 (a) is a longitudinal sectional view of the whole, and FIG.
2B is a sectional view taken along the line AA in FIG. 2A, and FIG. 2C is a sectional view taken along the line BB in FIG. 2A. In the figure, 20 is a cylindrical wall made of a chemical resistant resin (hereinafter referred to as a resin cylinder), and 21a and 21b are installed inside the resin cylinder 20 and are made of a conductive material such as silicon or a silicon compound. Each of the suction plates is connected to the controller 10 (see FIG. 1) to adsorb a charged impurity by applying a voltage.
As shown in FIG. 2, two comb-shaped suction plates 21 a and 21 b face each other inside the resin cylinder 20.
A plurality of plates corresponding to the teeth of the combs 1a and 21b are alternately arranged.
【００１８】以上のように構成された洗浄装置につい
て、以下その動作を説明する。まず、並列に備えられた
一方の不純物除去装置９ａに洗浄液２を通液して循環さ
せ基板１の洗浄を行い、同時に洗浄液２中の不純物除去
を行う。この間に他方の不純物除去装置９ｂの再生処理
を行う。この工程をＡ工程とする。次に、再生処理を完
了した不純物除去装置９ｂに洗浄液２を通液して循環さ
せ基板１の洗浄を行い、同時に洗浄液２中の不純物除去
を行う。この間にもう一方の不純物除去装置９ａの再生
処理を行う。この工程をＢ工程とする。このようなＡ工
程とＢ工程とを所定の時間で交互に繰り返すことによ
り、連続して洗浄液２中の不純物除去を行う。The operation of the cleaning apparatus constructed as above will be described below. First, the cleaning liquid 2 is passed through one of the impurity removing devices 9a provided in parallel and circulated to clean the substrate 1, and at the same time, the impurities in the cleaning liquid 2 are removed. During this period, the other impurity removing device 9b is regenerated. This process is called process A. Next, the cleaning liquid 2 is passed through the impurity removing device 9b that has completed the regeneration treatment and circulated to clean the substrate 1, and at the same time, the impurities in the cleaning liquid 2 are removed. During this period, the other impurity removing device 9a is regenerated. This step is called Step B. Impurities in the cleaning liquid 2 are continuously removed by alternately repeating the steps A and B for a predetermined time.
【００１９】以下、上記Ａ工程について詳細に説明す
る。まず、バルブ１４ａを開、バルブ１４ｂを閉にし、
不純物除去装置９ａの２ケの吸着板２１ａ，２１ｂにコ
ントローラ１０より正負逆の電位を、例えば±５〜５０
Ｖで与える。この状態で、処理槽３の内槽３ａから外槽
３ｂにオーバーフローした洗浄液２をエアー駆動式ポン
プ４によって吸引し、フィルタ５、不純物除去装置９ａ
を介し内槽３ａに還流させることにより連続して洗浄液
２を循環させる。この時、洗浄液２中に含まれる粒径
０．０５〜０．１μｍ以上の粒子状不純物はフィルタ５
で除去され、フィルタ５を通過した粒径０．０５μｍ以
下の微粒子不純物およびＡｌ、Ｆｅ、Ｃｕなどの各種メ
タル不純物は洗浄液２中で正あるいは負の電荷を帯びて
おり、不純物除去装置９ａ内の吸着板２１ａ，２１ｂに
電気吸着により捕獲される。The above step A will be described in detail below. First, open the valve 14a and close the valve 14b,
A controller 10 applies a positive and negative electric potential to the two adsorption plates 21a and 21b of the impurity removing device 9a, for example, ± 5 to 50.
Give with V. In this state, the cleaning liquid 2 overflowing from the inner tank 3a of the processing tank 3 to the outer tank 3b is sucked by the air-driven pump 4, and the filter 5 and the impurity removing device 9a.
The cleaning liquid 2 is continuously circulated by being refluxed to the inner tank 3a via the. At this time, particulate impurities having a particle size of 0.05 to 0.1 μm or more contained in the cleaning liquid 2 are filtered by the filter 5.
The fine particle impurities having a particle size of 0.05 μm or less and various metal impurities such as Al, Fe, and Cu which have been removed by the filter 5 and have a positive or negative charge in the cleaning liquid 2 are stored in the impurity removing device 9a. It is captured by the adsorption plates 21a and 21b by electroadsorption.
【００２０】この実施の形態による吸着板２１ａ，２１
ｂは図２に示すように２ケの吸着板２１ａ，２１ｂがそ
れぞれ櫛状で櫛の歯に当たる部分の複数の板が互い違い
に交互に配設されているため、洗浄液２と吸着板２１
ａ，２１ｂが対向する部分との接触面積が増大し、洗浄
液２中の電荷を帯びた不純物を有効に捕獲できる。The suction plates 21a, 21 according to this embodiment
As shown in FIG. 2, two suction plates 21a and 21b are comb-shaped, and a plurality of plates corresponding to the teeth of the comb are alternately arranged.
The contact area between the a and 21b facing each other is increased, and the charged impurities in the cleaning liquid 2 can be effectively captured.
【００２１】上記一方の不純物除去装置９ａを介した洗
浄液２の循環と同時進行で行う他方の不純物除去装置９
ｂの再生処理について、以下に説明する。まず、バルブ
１５ａを閉、バルブ１５ｂを開にし、バルブ１７を開に
して純水供給装置１２から不純物除去装置９ｂ内に純水
を導入する。これにより純水供給装置１２内に残存して
いた洗浄液２が純水で置換される。次にバルブ１７を
閉、バルブ１６を開にして再生液供給装置１１から不純
物除去装置９ｂ内に再生液を導入する。再生液には、例
えば希塩酸または希弗酸等の酸性溶液あるいはこれら酸
性溶液に過酸化水素水等の酸化剤を混合した溶液を使用
する。この再生液の導入の際、不純物除去装置９ｂ内の
吸着板２１ａ，２１ｂに、洗浄液２中の不純物を吸着さ
せる時と正負逆の電位をコントローラ１０より与える。
これにより吸着板２１ａ，２１ｂに電気的に吸着してい
た不純物は、再生液中に脱離する。このうち各種のメタ
ル不純物は、酸性溶液である再生液中に溶解する。The other impurity removing device 9 is operated simultaneously with the circulation of the cleaning liquid 2 through the one impurity removing device 9a.
The reproduction process of b will be described below. First, the valve 15a is closed, the valve 15b is opened, the valve 17 is opened, and pure water is introduced from the pure water supply device 12 into the impurity removing device 9b. As a result, the cleaning liquid 2 remaining in the pure water supply device 12 is replaced with pure water. Next, the valve 17 is closed and the valve 16 is opened to introduce the regenerant from the regenerant supply device 11 into the impurity removing device 9b. As the regenerating liquid, for example, an acidic solution such as dilute hydrochloric acid or dilute hydrofluoric acid or a solution obtained by mixing an oxidizing agent such as hydrogen peroxide solution with these acidic solutions is used. At the time of introducing the regenerant, the controller 10 gives the positive and negative potentials opposite to those when the impurities in the cleaning liquid 2 are adsorbed to the adsorption plates 21a and 21b in the impurity removing device 9b.
As a result, the impurities electrically adsorbed on the adsorption plates 21a and 21b are desorbed in the regenerant. Of these, various metal impurities are dissolved in the regeneration solution, which is an acidic solution.
【００２２】次に、バルブ１６を閉、バルブ１７を開に
して、再び純水供給装置１２から不純物除去装置９ｂ内
に純水を導入して洗浄することにより、吸着板２１ａ，
２１ｂから脱離した不純物を再生液とともに廃液口１９
から排出する。さらに、バルブ１７を閉、バルブ１８を
開にしてエアー供給装置１３から不純物除去装置９ｂ内
にエアーを導入してパージする。再生処理に用いられた
再生液および純水は全て廃液口１９から排出される。こ
の後バルブ１８を閉にして不純物除去装置９ｂの再生処
理を完了する。Next, the valve 16 is closed and the valve 17 is opened, and pure water is again introduced from the pure water supply device 12 into the impurity removing device 9b to wash it, whereby the adsorption plates 21a,
Impurities desorbed from 21b, together with the regenerant, are drained 19
Discharged from Further, the valve 17 is closed and the valve 18 is opened to introduce air from the air supply device 13 into the impurity removing device 9b for purging. The regeneration liquid and the pure water used for the regeneration treatment are all discharged from the waste liquid port 19. Then, the valve 18 is closed to complete the regeneration process of the impurity removing device 9b.
【００２３】以上のようなＡ工程による処理の後、Ｂ工
程による処理を行う。Ｂ工程では、バルブ１４ａを閉、
１４ｂを開にし、バルブ１５ａを開、バルブ１５ｂを閉
にして、Ａ工程で再生処理をした不純物除去装置９ｂを
洗浄液２の循環系に用い、Ａ工程で洗浄液２の循環系に
用いた不純物除去装置９ａを上記循環系から切り離し再
生処理する。処理の方法はＡ工程と同様である。After the processing by the step A as described above, the processing by the step B is performed. In step B, the valve 14a is closed,
14b is opened, the valve 15a is opened, and the valve 15b is closed, and the impurity removing device 9b regenerated in the step A is used for the circulation system of the cleaning liquid 2, and the impurities removal used for the circulation system of the cleaning liquid 2 in the step A is performed. The device 9a is separated from the circulation system and regenerated. The method of treatment is the same as in step A.
【００２４】この実施の形態では、不純物除去装置９
ａ，９ｂを再生させる機構を洗浄装置に設けたため、吸
着板２１ａ，２１ｂによる不純物の捕獲率が低下して
も、吸着した不純物を吸着板２１ａ，２１ｂから脱離さ
せて再生することによって、不純物除去装置９ａ，９ｂ
の機能を保つことができる。このため、洗浄液２中の不
純物濃度を低減でき、基板１表面への不純物の付着を有
効に防止できる。また、一度作製した洗浄液２を、不純
物濃度を増加させることなく長時間使用可能にできるた
め、洗浄液２の交換をほとんど行う必要がなく、コスト
も低減できる。In this embodiment, the impurity removing device 9
Since the cleaning device is provided with a mechanism for regenerating a and 9b, even if the trapping rate of impurities by the adsorbing plates 21a and 21b is reduced, the adsorbed impurities are desorbed from the adsorbing plates 21a and 21b to regenerate the impurities. Removal device 9a, 9b
The function of can be maintained. Therefore, the concentration of impurities in the cleaning liquid 2 can be reduced, and the adhesion of impurities to the surface of the substrate 1 can be effectively prevented. Further, since the cleaning liquid 2 once prepared can be used for a long time without increasing the impurity concentration, it is almost unnecessary to replace the cleaning liquid 2, and the cost can be reduced.
【００２５】また、不純物除去装置９ａ，９ｂを再生処
理する際、再生液を供給することにより、吸着板２１
ａ，２１ｂに吸着していた不純物を再生液中に脱離す
る。この時、吸着板２１ａ，２１ｂに不純物吸着時と正
負逆の電位を与えるため、不純物の吸着板２１ａ，２１
ｂからの脱離が確実に行える。また、再生液に希塩酸ま
たは希弗酸等の酸性溶液あるいはこれら酸性溶液に過酸
化水素水等の酸化剤を混合した溶液を用いるため、メタ
ル不純物が再生液中に溶解し、不純物の吸着板２１ａ、
２１ｂから再生液への脱離が有効に行える。When the impurity removing devices 9a and 9b are regenerated, the adsorbing plate 21 is supplied by supplying a regenerating liquid.
The impurities adsorbed on a and 21b are desorbed into the regenerant. At this time, since positive and negative electric potentials are applied to the adsorption plates 21a and 21b, which are opposite to those when the impurities are adsorbed, the adsorption plates 21a and 21b
Detachment from b can be reliably performed. Further, since an acidic solution such as dilute hydrochloric acid or dilute hydrofluoric acid or a solution obtained by mixing an oxidizing agent such as hydrogen peroxide solution into the acidic solution is used as the regenerating solution, metal impurities are dissolved in the regenerating solution and the impurity adsorbing plate 21a is used. ,
The desorption from 21b to the regeneration liquid can be effectively performed.
【００２６】また、この実施の形態では、２ケの不純物
除去装置９ａ，９ｂを並列に備えて、Ａ工程では一方の
不純物除去装置９ａによる不純物除去を行い、同時に他
方の不純物除去装置９ｂの再生処理を行う。次に、Ｂ工
程では、不純物除去装置９ｂによる不純物除去を行い、
同時にもう一方の不純物除去装置９ａの再生処理を行
う。このようなＡ工程とＢ工程とを交互に行うものであ
る。すなわち、２ケの不純物除去装置９ａ，９ｂを交替
に洗浄液の循環系に用いることにより、再生処理中も洗
浄液２を循環させて連続して不純物除去を行うことがで
き、洗浄液２の清浄度を保持して、洗浄装置を長時間連
続使用することができる。Further, in this embodiment, two impurity removing devices 9a and 9b are provided in parallel, and in step A, one impurity removing device 9a removes impurities, and at the same time, the other impurity removing device 9b is regenerated. Perform processing. Next, in step B, impurities are removed by the impurity removing device 9b,
At the same time, the other impurity removing device 9a is regenerated. The process A and the process B are alternately performed. That is, by alternately using the two impurity removing devices 9a and 9b in the circulation system of the cleaning liquid, the cleaning liquid 2 can be circulated during the regeneration treatment to continuously remove impurities, and the cleanliness of the cleaning liquid 2 can be improved. The cleaning device can be held and used continuously for a long time.
【００２７】なお、上記実施の形態１では、洗浄装置に
２ケの不純物除去装置９ａ，９ｂを備えたが、３ケまた
はそれ以上の不純物除去装置を備えて交替に不純物除去
に用いても良い。In the first embodiment, the cleaning device is provided with the two impurity removing devices 9a and 9b, but the cleaning device may be provided with three or more impurity removing devices and may be alternately used for the impurity removal. .
【００２８】また、不純物除去装置９ａ，９ｂの吸着板
２１ａ，２１ｂは櫛状としたが、吸着板２１ａ，２１ｂ
表面を凹凸状にして洗浄液２との接触面積を増大させて
も、不純物除去に有効である。Further, although the suction plates 21a and 21b of the impurity removing devices 9a and 9b are formed in a comb shape, the suction plates 21a and 21b.
Even if the surface is made uneven to increase the contact area with the cleaning liquid 2, it is effective for removing impurities.
【００２９】また、上記実施の形態では、薬液処理装置
として基板１を洗浄する洗浄装置を用いたが、薬液にエ
ッチング液を用いたウェットエッチング装置でも同様の
効果を奏する。Further, in the above-described embodiment, the cleaning apparatus for cleaning the substrate 1 is used as the chemical processing apparatus, but a wet etching apparatus using an etching solution as the chemical also produces the same effect.
【００３０】[0030]
【発明の効果】以上のようにこの発明によると、薬液処
理装置に不純物除去装置を再生する機構を備えたため、
不純物除去装置の機能を保ち、薬液中の不純物濃度を低
減でき、半導体基板等の被処理基板表面に不純物が付着
して汚染させるのを有効に防止できる。また薬液を長時
間使用できてコストも低減できる。As described above, according to the present invention, the chemical treatment device is provided with the mechanism for regenerating the impurity removing device.
It is possible to maintain the function of the impurity removing device, reduce the impurity concentration in the chemical liquid, and effectively prevent impurities from adhering to and contaminating the surface of the substrate to be processed such as the semiconductor substrate. Further, the chemical solution can be used for a long time, and the cost can be reduced.
【００３１】また、この発明によると、フィルターを備
えたために、薬液中の不純物のうちフィルタの孔径以上
の粒径の粒子状不純物をフィルタで除去し、微細な粒子
状不純物およびメタル不純物を再生可能な不純物除去装
置で除去するため、薬液中の不純物除去が効率的に行え
る。Further, according to the present invention, since the filter is provided, it is possible to regenerate fine particulate impurities and metal impurities by removing particulate impurities having a particle diameter larger than the pore diameter of the filter from impurities in the chemical liquid. Since it is removed by a simple impurity removing device, impurities in the chemical solution can be removed efficiently.
【００３２】また、この発明によると、複数の不純物除
去装置を並列に備え、これらを交替に薬液の循環系に用
いて薬液中の不純物を除去し、薬液中の不純物除去と不
純物除去装置の再生とを同時進行で処理可能としたた
め、再生処理中も連続して不純物除去を行うことがで
き、薬液の清浄度を保持して、薬液処理装置を長時間連
続使用することができる。Further, according to the present invention, a plurality of impurity removing devices are provided in parallel, and these are alternately used for the circulation system of the chemical liquid to remove impurities in the chemical liquid to remove the impurities in the chemical liquid and regenerate the impurity removing device. Since it is possible to process simultaneously with and, impurities can be continuously removed during the regeneration process, the cleanliness of the chemical liquid can be maintained, and the chemical liquid processing device can be continuously used for a long time.
【００３３】また、この発明によると、不純物除去装置
を再生する機構に、再生液供給装置および純水あるいは
エアーの供給装置を備えたため、不純物除去装置の吸着
板に吸着していた不純物を再生液中に脱離でき、さらに
純水あるいはエアーで再生液を置換できるため、容易に
再生処理が行える。Further, according to the present invention, since the mechanism for regenerating the impurity removing device is provided with the regenerating liquid supplying device and the pure water or air supplying device, the impurities adsorbed on the adsorption plate of the impurity removing device are regenerated liquid. Since it can be desorbed inside and the regeneration liquid can be replaced with pure water or air, regeneration treatment can be easily performed.
【００３４】また、この発明によると、再生液に、酸性
溶液、あるいは酸性溶液に酸化剤を混合した溶液を用い
るため、メタル不純物が再生液中に溶解でき、吸着板に
吸着していた不純物の再生液中への脱離を有効に行え、
不純物除去装置の再生処理が一層確実に行える。Further, according to the present invention, since an acidic solution or a solution obtained by mixing an acidic solution with an oxidizing agent is used as the regenerating liquid, the metal impurities can be dissolved in the regenerating liquid and the impurities adsorbed on the adsorption plate can be dissolved. It can be effectively released into the regenerating liquid,
Regeneration of the impurity removing device can be performed more reliably.
【００３５】また、この発明によると、不純物除去装置
が導電性材料からなり電圧を印加できる２ヶの相対向す
る櫛状の吸着板を有し、２ヶの櫛状の吸着板の櫛の歯に
当たる部分の複数の板が互い違いに交互に配設されたた
め、薬液と、吸着板が対向する部分との接触面積が増大
し、不純物を有効に捕獲して除去できる。Further, according to the present invention, the impurity removing device is made of a conductive material and has two facing comb-shaped suction plates to which a voltage can be applied, and the comb teeth of the two comb-shaped suction plates. Since the plurality of plates corresponding to the contact part are alternately arranged, the contact area between the chemical solution and the part where the adsorption plate faces is increased, and the impurities can be effectively captured and removed.
【００３６】また、この発明によると、吸着板表面を凹
凸状としたため、薬液と、吸着板が対向する部分との接
触面積が増大し、不純物を有効に捕獲して除去できる。Further, according to the present invention, since the surface of the adsorption plate is made uneven, the contact area between the chemical solution and the portion facing the adsorption plate is increased, and the impurities can be effectively captured and removed.
【００３７】また、この発明による薬液処理方法は、再
生液供給時に、不純物除去装置の吸着板に、不純物吸着
時と正負逆の電位を与えるため、吸着板に吸着していた
不純物を再生液中に確実に脱離でき、不純物除去装置の
再生処理が確実に行える。Further, in the chemical treatment method according to the present invention, when the regenerant is supplied, the adsorption plate of the impurity removing device is applied with a positive and negative electric potential opposite to that at the time of adsorbing the impurities. Therefore, desorption can be surely performed, and the regeneration treatment of the impurity removing device can be reliably performed.
【図１】 この発明の実施の形態１による薬液処理装置
を示す構成図である。FIG. 1 is a configuration diagram showing a chemical liquid processing apparatus according to a first embodiment of the present invention.
【図２】 この発明の実施の形態１による不純物除去装
置の構造を示す断面図である。FIG. 2 is a sectional view showing the structure of the impurity removing apparatus according to the first embodiment of the present invention.
【図３】 従来の洗浄装置を示す構成図である。FIG. 3 is a configuration diagram showing a conventional cleaning device.
【図４】 従来の不純物除去装置を示す構成図である。FIG. 4 is a configuration diagram showing a conventional impurity removing apparatus.
【図５】 従来の洗浄装置の問題を説明するグラフであ
る。FIG. 5 is a graph illustrating a problem of a conventional cleaning device.
２ 薬液としての洗浄液、５ フィルタ、９ａ，９ｂ
不純物除去装置、１０ 電位調整コントローラ、１１
再生液供給装置、１２ 純水供給装置、１３ エアー供
給装置、２０ 筒状の壁面、２１ａ，２１ｂ 吸着板。2 Cleaning solution as chemical solution, 5 filters, 9a, 9b
Impurity remover, 10 Potential adjustment controller, 11
Regeneration liquid supply device, 12 pure water supply device, 13 air supply device, 20 cylindrical wall surface, 21a, 21b adsorption plate.
Claims (8)
環系に配設され、導電性材料から成る吸着板に電位を与
えて不純物を吸着することによって、上記薬液中の不純
物を除去する不純物除去装置と、上記不純物除去装置を
上記薬液の循環系から切り離し、上記吸着板に吸着した
不純物を脱離させて上記不純物除去装置を再生する機構
と、を備えたことを特徴とする薬液処理装置。1. An impurity for removing impurities in the chemical liquid by providing a mechanism for circulating the chemical liquid and a circulation system for the chemical liquid, and applying an electric potential to an adsorption plate made of a conductive material to adsorb the impurities. And a mechanism for separating the impurity removing device from the circulation system for the chemical liquid and desorbing the impurities adsorbed by the adsorption plate to regenerate the impurity removing device. .
タを、上記薬液の循環系の不純物除去装置の入口側に備
えたことを特徴とする請求項１記載の薬液処理装置。2. The chemical liquid treatment apparatus according to claim 1, wherein a filter for removing particulate impurities in the chemical liquid is provided on the inlet side of the impurity removal device in the chemical liquid circulation system.
記複数の不純物除去装置を交替に薬液の循環系に用い
て、上記薬液中の不純物を除去し、上記薬液中の不純物
除去と上記不純物除去装置の再生とを同時進行で処理可
能にしたことを特徴とする請求項１または２記載の薬液
処理装置。3. A plurality of impurity removing devices are provided in parallel, and the plurality of impurity removing devices are alternately used for a circulation system of the chemical liquid to remove impurities in the chemical liquid, and to remove impurities in the chemical liquid and the impurities. The chemical liquid treatment apparatus according to claim 1 or 2, wherein the removal apparatus can be regenerated at the same time.
板に吸着した不純物を液中に脱離させる再生液の供給装
置と、使用済みの上記再生液を置換する純水あるいはエ
アーの供給装置とを備えたことを特徴とする請求項１〜
３のいずれかに記載の薬液処理装置。4. A mechanism for regenerating the impurity removing device, a regenerator supply device for desorbing impurities adsorbed on the adsorption plate into the liquid, and a pure water or air supply device for replacing the used regenerant liquid. And 1 are provided.
3. The chemical treatment device according to any one of 3.
に酸化剤を混合した溶液を用いることを特徴とする請求
項４記載の薬液処理装置。5. The chemical treatment apparatus according to claim 4, wherein an acidic solution or a solution obtained by mixing an oxidizing agent with the acidic solution is used as the regenerating liquid.
不純物を電気的に吸着して除去する不純物除去装置とを
備えた薬液処理装置において、上記不純物処理装置が、
耐薬品性の筒状の壁面と、この筒状の壁面内に導電性材
料から成り電圧を印加できる２ヶの相対向する櫛状の吸
着板とを有し、上記２ヶの櫛状の吸着板の櫛の歯に当た
る部分の複数の板が互い違いに交互に配設されたことを
特徴とする薬液処理装置。6. A chemical solution treating apparatus comprising a mechanism for circulating a chemical solution and an impurity removing apparatus for electrically adsorbing and removing impurities in the chemical solution, wherein the impurity treating apparatus comprises:
A chemical-resistant cylindrical wall surface and two opposing comb-shaped suction plates made of a conductive material and capable of applying a voltage are provided in the cylindrical wall surface. A chemical treatment apparatus, wherein a plurality of plates corresponding to the teeth of a comb of the plates are alternately arranged.
不純物を電気的に吸着して除去する不純物除去装置とを
備えた薬液処理装置において、上記不純物除去装置が耐
薬品性の筒状の壁面と、この筒状の壁面内に導電性材料
から成り電圧を印加できる吸着板とを有し、上記吸着板
表面が凹凸状であることを特徴とする薬液処理装置。7. A chemical solution treating apparatus comprising a mechanism for circulating a chemical solution and an impurity removing apparatus for electrically adsorbing and removing impurities in the chemical solution, wherein the impurity removing apparatus is a chemical-resistant tubular shape. A chemical treatment apparatus having a wall surface and an adsorption plate made of a conductive material and capable of applying a voltage in the cylindrical wall surface, wherein the adsorption plate surface is uneven.
用いた薬液処理方法において、再生液供給時に、不純物
除去装置の吸着板に、不純物吸着時と正負逆の電位を与
えて、吸着していた不純物を上記再生液中に脱離させる
ことを特徴とする薬液処理方法。8. The chemical treatment method using the chemical treatment apparatus according to claim 4 or 5, wherein when the regenerant is supplied, the adsorption plate of the impurity removal apparatus is applied with an electric potential that is opposite to that at the time of adsorbing the impurities to adsorb them. The chemical treatment method is characterized in that the impurities that have been used are desorbed into the regenerant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32556195A JPH09167752A (en) | 1995-12-14 | 1995-12-14 | Method and device for chemical solution treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32556195A JPH09167752A (en) | 1995-12-14 | 1995-12-14 | Method and device for chemical solution treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09167752A true JPH09167752A (en) | 1997-06-24 |
Family
ID=18178276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32556195A Pending JPH09167752A (en) | 1995-12-14 | 1995-12-14 | Method and device for chemical solution treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09167752A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007185581A (en) * | 2006-01-12 | 2007-07-26 | Nomura Micro Sci Co Ltd | Purification method and purification apparatus for oxidizing agent |
| US7472713B2 (en) | 2001-08-20 | 2009-01-06 | Tokyo Electron Limited | Substrate processing apparatus |
| JP2013186082A (en) * | 2012-03-09 | 2013-09-19 | Shinshu Univ | Device and method for purifying radioactive contaminated water |
| JP2014124576A (en) * | 2012-12-26 | 2014-07-07 | Disco Abrasive Syst Ltd | Effluent treatment apparatus |
| JP2016192473A (en) * | 2015-03-31 | 2016-11-10 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing device and substrate processing method |
| JP2017033991A (en) * | 2015-07-29 | 2017-02-09 | 東京エレクトロン株式会社 | Liquid processing method and liquid processing apparatus |
| TWI658173B (en) * | 2016-09-30 | 2019-05-01 | 日商斯庫林集團股份有限公司 | Substrate processing apparatus |
-
1995
- 1995-12-14 JP JP32556195A patent/JPH09167752A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7472713B2 (en) | 2001-08-20 | 2009-01-06 | Tokyo Electron Limited | Substrate processing apparatus |
| JP2007185581A (en) * | 2006-01-12 | 2007-07-26 | Nomura Micro Sci Co Ltd | Purification method and purification apparatus for oxidizing agent |
| JP2013186082A (en) * | 2012-03-09 | 2013-09-19 | Shinshu Univ | Device and method for purifying radioactive contaminated water |
| JP2014124576A (en) * | 2012-12-26 | 2014-07-07 | Disco Abrasive Syst Ltd | Effluent treatment apparatus |
| JP2016192473A (en) * | 2015-03-31 | 2016-11-10 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing device and substrate processing method |
| JP2017033991A (en) * | 2015-07-29 | 2017-02-09 | 東京エレクトロン株式会社 | Liquid processing method and liquid processing apparatus |
| TWI658173B (en) * | 2016-09-30 | 2019-05-01 | 日商斯庫林集團股份有限公司 | Substrate processing apparatus |
| US11217461B2 (en) | 2016-09-30 | 2022-01-04 | SCREEN Holdings Co., Ltd. | Substrate processing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0671540B2 (en) | Cleaning method of hollow fiber membrane filter | |
| JPH0684875A (en) | Method and apparatus for reduction of fine- particle concentration in working fluid | |
| JPH09167752A (en) | Method and device for chemical solution treatment | |
| KR20170015195A (en) | Liquid processing method and liquid processing apparatus | |
| JP3138901B2 (en) | Substrate immersion processing equipment | |
| JP2001017887A (en) | Method and apparatus for removing foreign matter during washing of wafer | |
| JP2576409B2 (en) | Method and apparatus for removing metal impurities | |
| JP5248209B2 (en) | Chemical recovery device and chemical recovery method | |
| JP2541443B2 (en) | Wet etching apparatus and filter regeneration method | |
| JPH0731810A (en) | Purification of filter in washing process | |
| JP2000058492A (en) | Immersion processing system for substrate | |
| JP2010192566A (en) | Substrate processing apparatus and solvent reproducing method | |
| JP2833944B2 (en) | Ultrapure water production method | |
| CN115889332B (en) | Wafer cleaning system | |
| JP3355827B2 (en) | Semiconductor processing method and semiconductor processing apparatus using processing liquid | |
| JP2685596B2 (en) | Silicon wafer etching method | |
| JPH088223A (en) | Method and apparatus for cleaning semiconductor substrate | |
| JP7364641B2 (en) | Regeneration system and method for pump filters for spin etching equipment | |
| JPH0263586A (en) | Cleaning device | |
| JPH0584402A (en) | Manufacture of filter for removing heavy metal in hf chemical | |
| JPH09308882A (en) | Water treatment apparatus | |
| JPH0521415A (en) | Semiconductor processor | |
| JP2967371B2 (en) | Aluminum alloy degreasing equipment | |
| JPS6031812A (en) | Filter material regenerating method | |
| JPH04290432A (en) | Semiconductor manufacturing device |