JPH09162220A - Bonding wire and wire bonding method - Google Patents

Bonding wire and wire bonding method

Info

Publication number
JPH09162220A
JPH09162220A JP7324217A JP32421795A JPH09162220A JP H09162220 A JPH09162220 A JP H09162220A JP 7324217 A JP7324217 A JP 7324217A JP 32421795 A JP32421795 A JP 32421795A JP H09162220 A JPH09162220 A JP H09162220A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
bonding
resin
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7324217A
Other languages
Japanese (ja)
Inventor
Yutaka Harada
豊 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP7324217A priority Critical patent/JPH09162220A/en
Publication of JPH09162220A publication Critical patent/JPH09162220A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45013—Cross-sectional shape being non uniform along the connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To increase the rigidity of a bonding wire, and to lessen the wire slipping and the disconnection of the wire when a resin sealing operation is conducted. SOLUTION: The cross-sectional shape of a wire bonding wire 6 is formed into an H-shaped having a polygon, especially a rugged surface and a plane surface. As a result, the rigidity of the bonding wire 6 can be improved greater than before. Also, the rigidity of the bonding wire against a resin flow an be greatly improved by conducting wire bonding in such a manner that the H- shaped plane surface side is opposing in the direction of the resin flow when mold resin is injected, and the slipping of the wire and the is connection of the wire caused by the resin flow can be lessened.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子とリー
ドフレームを電気的に接続するボンディング用ワイヤで
あって、その剛性を高め、曲げ強度を強めたワイヤ、お
よびそのボンディング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire for electrically connecting a semiconductor element and a lead frame, the wire having increased rigidity and bending strength, and a bonding method thereof.

【０００２】[0002]

【従来の技術】半導体装置の組立製造のワイヤボンディ
ング工程においては、図５に示すように、リードフレー
ム１上のダイパッド２上に接合剤３で接合された半導体
素子４と、リードフレーム１のインナーリード５とを電
気的に接続するための手段として、アルミニウム線（Ａ
ｌ）、金線（Ａｕ）などのボンディング用ワイヤ６が使
用されている。2. Description of the Related Art In a wire bonding process for assembling and manufacturing a semiconductor device, as shown in FIG. 5, a semiconductor element 4 bonded to a die pad 2 on a lead frame 1 with a bonding agent 3 and an inner portion of the lead frame 1 are used. As a means for electrically connecting to the lead 5, an aluminum wire (A
1), a bonding wire 6 such as a gold wire (Au) is used.

【０００３】従来から使用されているボンディング用ワ
イヤ６は、図６（ａ）の断面図、図６（ｂ）の部分平面
図に示すように、その断面形状においては円形であっ
た。The bonding wire 6 used conventionally has a circular cross-sectional shape as shown in the sectional view of FIG. 6A and the partial plan view of FIG. 6B.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うな断面形状が円形のボンディング用ワイヤでは、その
剛性が弱く、半導体素子の小型化、リードピッチの縮小
化に伴ってワイヤの細線化、また半導体素子とリードフ
レームとの間が広くなり、ボンディング用ワイヤ長が長
くなることにより、モールド樹脂で封止した際、ボンデ
ィング用ワイヤが流れたり、断線したりするという不都
合が生じていた。However, such a bonding wire having a circular cross-sectional shape has a low rigidity, and the wire becomes finer as the semiconductor element becomes smaller and the lead pitch becomes smaller. Since the distance between the element and the lead frame becomes wide and the length of the bonding wire becomes long, there has been a problem that the bonding wire flows or breaks when it is sealed with the molding resin.

【０００５】本発明は、前記従来の課題を解決するもの
で、ワイヤの剛性を強くし、樹脂封止の際のワイヤ流れ
や断線を低減することができるボンディング用ワイヤお
よびワイヤボンディング方法を提供することを課題とす
る。The present invention solves the above-mentioned conventional problems, and provides a bonding wire and a wire bonding method capable of increasing the rigidity of the wire and reducing the wire flow and disconnection at the time of resin sealing. This is an issue.

【０００６】[0006]

【課題を解決するための手段】この目的を達成するため
に、本発明のボンディング用ワイヤは、その断面形状を
非円形としたものである。To achieve this object, the bonding wire of the present invention has a non-circular cross-sectional shape.

【０００７】このようにボンディング用ワイヤの断面形
状を、円形ではなく、非円形としたことで、その剛性が
断面円形のワイヤに比べて剛性が向上し、モールド樹脂
で封止した場合のワイヤ流れや断線が低減される。Since the bonding wire has a non-circular cross-sectional shape instead of a circular shape, its rigidity is higher than that of a wire having a circular cross-section, and the wire flow when sealed with a mold resin. And wire breaks are reduced.

【０００８】また、ボンディング用ワイヤの断面形状を
凹凸面と平坦面とを有する形状とすることで、その剛性
をより一層高められる。Further, the rigidity of the bonding wire can be further increased by making the cross-sectional shape of the bonding wire into a shape having an uneven surface and a flat surface.

【０００９】さらにまた、ボンディング用ワイヤの断面
形状をＨ字型の凹凸面と平坦面とを有する形状とするこ
とが好ましい。Furthermore, it is preferable that the bonding wire has a cross-sectional shape having an H-shaped uneven surface and a flat surface.

【００１０】本発明のワイヤボンディング方法は、断面
形状が凹凸面と平坦面とを有するＨ字形状のボンディン
グ用ワイヤの、前記平坦面を、後工程のモールド樹脂を
注入して樹脂封止する際の樹脂流の方向に対向するよう
にボンディングするものである。According to the wire bonding method of the present invention, when the flat surface of an H-shaped bonding wire having a concave-convex surface and a flat surface in cross section is injected with a molding resin in a subsequent step, the resin is sealed. The bonding is performed so as to face the direction of the resin flow.

【００１１】このように、断面形状Ｈ字型のボンディン
グ用ワイヤの平坦面側をモールド樹脂の樹脂流方向に対
向させてボンディングをすることで、ボンディング用ワ
イヤの剛性が一段と向上し、樹脂流によるワイヤ流れや
断線の発生が低減する。As described above, the rigidity of the bonding wire is further improved by bonding by making the flat surface side of the bonding wire having an H-shaped cross section face the resin flow direction of the molding resin, and the bonding wire is further improved in rigidity. The occurrence of wire flow and wire breakage is reduced.

【００１２】[0012]

【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【００１３】図１〜図３は本発明のボンディング用ワイ
ヤ６の断面形状を示す図である。図１（ａ），（ｂ）は
それぞれ多角形状のボンディング用ワイヤの断面図と部
分平面図であり、四角形の断面形状の例を示す。図２
（ａ），（ｂ）はそれぞれ多角形状のボンディング用ワ
イヤの断面図と部分平面図であり、八角形の断面形状の
例を示す。図３（ａ），（ｂ）はそれぞれ凹凸形状のボ
ンディング用ワイヤの断面図と部分平面図であり、凹凸
面と平坦面とを有するＨ字型の断面形状の例を示す。な
お、図１〜図３に示したボンディング用ワイヤは、アル
ミニウム線（Ａｌ）、金線（Ａｕ）などの金属細線より
なり、長手方向に連続するものである。また、ボンディ
ング用ワイヤは、多角形または凹凸の形状のダイスによ
り伸線して型形成されるものである。1 to 3 are views showing the cross-sectional shape of the bonding wire 6 of the present invention. 1A and 1B are a cross-sectional view and a partial plan view of a polygonal bonding wire, showing an example of a quadrangular cross-sectional shape. FIG.
(A) and (b) are a cross-sectional view and a partial plan view, respectively, of a polygonal bonding wire, showing an example of an octagonal cross-sectional shape. 3A and 3B are a cross-sectional view and a partial plan view, respectively, of a bonding wire having an uneven shape, showing an example of an H-shaped cross-sectional shape having an uneven surface and a flat surface. The bonding wires shown in FIGS. 1 to 3 are made of thin metal wires such as aluminum wires (Al) and gold wires (Au) and are continuous in the longitudinal direction. The bonding wire is formed by drawing with a die having a polygonal shape or an uneven shape.

【００１４】このように、ボンディング用ワイヤ６の断
面形状を非円形、特にワイヤ外周面に角または凹凸を設
けた多角形としたので、ワイヤの剛性が上がり、モール
ド樹脂を注入して封止する際の樹脂流によるワイヤ流れ
や断線を低減させることができる。さらには、ボンディ
ング用ワイヤ６の断面形状を図３に示したようなＨ字型
とすることで、その効果をより一層高めることができ
る。As described above, since the bonding wire 6 has a non-circular cross-sectional shape, particularly, a polygonal shape in which corners or irregularities are provided on the outer peripheral surface of the wire, the rigidity of the wire is increased, and molding resin is injected to seal the wire. It is possible to reduce wire flow and disconnection due to the resin flow. Furthermore, by making the bonding wire 6 have an H-shaped cross section as shown in FIG. 3, the effect can be further enhanced.

【００１５】また、図３に示すような断面形状が凹凸面
７ａと平坦面８ａとを有するＨ字形状のボンディング用
ワイヤ６を用いてワイヤボンディングする際、後工程の
モールド樹脂の注入の際、樹脂流の方向にＨ字型の平坦
面８ａ側を対向させるようにワイヤボンディングするこ
とにより、ボンディング用ワイヤの剛性が一段と向上
し、樹脂流によるワイヤ流れや断線を低減させることが
できる。When wire bonding is performed using the H-shaped bonding wire 6 having a cross-sectional shape having an uneven surface 7a and a flat surface 8a, as shown in FIG. By performing wire bonding so that the H-shaped flat surface 8a side faces the direction of the resin flow, the rigidity of the bonding wire is further improved, and the wire flow and disconnection due to the resin flow can be reduced.

【００１６】図４はそのメカニズムを示す図であり、リ
ードフレームのダイパッド２上に接合された半導体素子
４とインナーリード５とをボンディング用ワイヤ６で接
続した状態を示す。樹脂封止の際にモールド樹脂が矢印
方向に流れ、その樹脂流に対してボンディング用ワイヤ
６のＨ字型の断面の凹部側ではなく平坦面８ａ側で樹脂
を受けるので、ボンディング用ワイヤ６自体の剛性が向
上し、ワイヤ流れや断線の発生が効果的に抑制される。FIG. 4 is a view showing the mechanism, showing a state in which the semiconductor element 4 bonded to the die pad 2 of the lead frame and the inner lead 5 are connected by the bonding wire 6. When the resin is sealed, the molding resin flows in the direction of the arrow, and the resin is received not by the recessed side of the H-shaped cross section of the bonding wire 6 but by the flat surface 8a side with respect to the resin flow. The rigidity is improved, and the occurrence of wire flow and wire breakage is effectively suppressed.

【００１７】なお、ワイヤボンディング工程の後、半導
体素子領域の、モールド樹脂による樹脂封止工程におい
て、リードフレームの角部からモールド樹脂を注入する
のであるが、その際には、ボンディングしたワイヤに樹
脂流が対向することになり、剛性の弱いワイヤは、ワイ
ヤ流れ、断線などをひき起こす。しかし、上述のように
断面形状が凹凸面と平坦面とを有するＨ字形状のボンデ
ィング用ワイヤを用い、かつ樹脂流の方向にＨ字型の平
坦面側を対向させるようにボンディングすることによ
り、ボンディング用ワイヤの剛性が一段と向上し、樹脂
流によるワイヤ流れや断線を低減させることができるも
のである。After the wire bonding step, the mold resin is injected from the corners of the lead frame in the resin sealing step of the semiconductor element region with the mold resin. The flows are opposed to each other, and the wire having low rigidity causes wire flow and disconnection. However, as described above, by using an H-shaped bonding wire whose cross-sectional shape has an uneven surface and a flat surface, and by bonding so that the H-shaped flat surface sides face each other in the resin flow direction, The rigidity of the bonding wire is further improved, and wire flow and disconnection due to the resin flow can be reduced.

【００１８】[0018]

【発明の効果】本発明は、ボンディング用ワイヤの断面
形状を非円形状、さらには外周面に角または凹凸を設け
た多角形状、もしくは凹凸形状としたので、ボンディン
グ用ワイヤの剛性が向上し、モールド樹脂で封止した場
合のワイヤ流れや断線を低減させることができる。According to the present invention, since the bonding wire has a non-circular cross-sectional shape, and further, the bonding wire has a polygonal shape or an uneven shape provided with corners or unevenness on the outer peripheral surface, the rigidity of the bonding wire is improved. It is possible to reduce wire flow and disconnection when the resin is sealed with the molding resin.

【００１９】また、本発明は断面形状が凹凸面と平坦面
とを有するＨ字型のボンディング用ワイヤを使用し、後
工程のモールド樹脂の注入の際に、樹脂流の方向にＨ字
型の平坦面側を対向させるようにワイヤボンディングす
るので、ボンディング用ワイヤの剛性が一段と向上し、
樹脂流によるワイヤ流れや断線を低減させることができ
る。Further, according to the present invention, an H-shaped bonding wire whose cross-sectional shape has an uneven surface and a flat surface is used, and when the molding resin is injected in the subsequent step, the H-shaped bonding wire is formed in the direction of the resin flow. Since wire bonding is performed so that the flat surface sides face each other, the rigidity of the bonding wire is further improved,
It is possible to reduce wire flow and disconnection due to resin flow.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（ａ）は本発明のボンディング用ワイヤにおけ
る実施の形態の一例の断面図 （ｂ）はその一部分の平面図1A is a cross-sectional view of an example of an embodiment of a bonding wire of the present invention, and FIG. 1B is a plan view of a part thereof.

【図２】（ａ）は本発明のボンディング用ワイヤにおけ
る実施の形態の他の例の断面図 （ｂ）はその一部分の平面図2A is a sectional view of another example of the embodiment of the bonding wire of the present invention, and FIG. 2B is a plan view of a part thereof.

【図３】（ａ）は本発明のボンディング用ワイヤにおけ
る実施の形態のさらに他の例の断面図 （ｂ）はその一部分の平面図FIG. 3A is a sectional view of yet another example of the embodiment of the bonding wire of the present invention, and FIG. 3B is a plan view of a part thereof.

【図４】本発明のワイヤボンディング方法における実施
の形態の一例を説明するための図FIG. 4 is a diagram for explaining an example of an embodiment of a wire bonding method of the present invention.

【図５】半導体装置のワイヤを用いた電気的接続を示す
概略断面図FIG. 5 is a schematic cross-sectional view showing electrical connection using wires of a semiconductor device.

【図６】（ａ）は従来のボンディング用ワイヤの断面図 （ｂ）はその一部分の平面図6A is a sectional view of a conventional bonding wire, and FIG. 6B is a plan view of a part thereof.

【符号の説明】[Explanation of symbols]

１ リードフレーム ２ ダイパッド ３ 接合剤 ４ 半導体素子 ５ インナーリード ６ ボンディング用ワイヤ 1 Lead Frame 2 Die Pad 3 Bonding Agent 4 Semiconductor Element 5 Inner Lead 6 Bonding Wire

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 リードフレーム上のダイパッド上に接合
された半導体素子とインナーリードとを電気的に接続す
るボンディング用ワイヤであって、前記ボンディング用
ワイヤの断面形状が非円形であることを特徴とするボン
ディング用ワイヤ。1. A bonding wire for electrically connecting a semiconductor element bonded on a die pad on a lead frame and an inner lead, wherein the bonding wire has a non-circular cross-sectional shape. Bonding wire. 【請求項２】 リードフレーム上のダイパッド上に接合
された半導体素子とインナーリードとを電気的に接続す
るボンディング用ワイヤであって、前記ボンディング用
ワイヤの断面形状が多角形であることを特徴とするボン
ディング用ワイヤ。2. A bonding wire for electrically connecting a semiconductor element bonded on a die pad on a lead frame to an inner lead, wherein the bonding wire has a polygonal cross-sectional shape. Bonding wire. 【請求項３】 リードフレーム上のダイパッド上に接合
された半導体素子とインナーリードとを電気的に接続す
るボンディング用ワイヤであって、前記ボンディング用
ワイヤの断面形状が凹凸面と平坦面とを有する形状であ
ることを特徴とするボンディング用ワイヤ。3. A bonding wire for electrically connecting a semiconductor element bonded on a die pad on a lead frame and an inner lead, wherein the bonding wire has a concave-convex surface and a flat surface. A bonding wire having a shape. 【請求項４】 ボンディング用ワイヤの断面形状がＨ字
型の凹凸面と平坦面とを有する形状であることを特徴と
する請求項３記載のボンディング用ワイヤ。4. The bonding wire according to claim 3, wherein the bonding wire has a cross-sectional shape having an H-shaped uneven surface and a flat surface. 【請求項５】 ボンディング用ワイヤによりリードフレ
ーム上のダイパッド上に接合された半導体素子とインナ
ーリードとを電気的に接続するワイヤボンディング方法
において、断面形状が凹凸面と平坦面とを有するＨ字形
状のボンディング用ワイヤの前記平坦面を、後工程のモ
ールド樹脂を注入して樹脂封止する際の樹脂流の方向に
対向するようにボンディングすることを特徴とするワイ
ヤボンディング方法。5. A wire bonding method for electrically connecting a semiconductor element bonded on a die pad on a lead frame to an inner lead by a bonding wire, wherein an H-shaped cross-section has an uneven surface and a flat surface. The wire bonding method, wherein the flat surface of the bonding wire is bonded so as to face the direction of the resin flow at the time of injecting the molding resin in the subsequent step and sealing the resin.
JP7324217A 1995-12-13 1995-12-13 Bonding wire and wire bonding method Pending JPH09162220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7324217A JPH09162220A (en) 1995-12-13 1995-12-13 Bonding wire and wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7324217A JPH09162220A (en) 1995-12-13 1995-12-13 Bonding wire and wire bonding method

Publications (1)

Publication Number Publication Date
JPH09162220A true JPH09162220A (en) 1997-06-20

Family

ID=18163358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7324217A Pending JPH09162220A (en) 1995-12-13 1995-12-13 Bonding wire and wire bonding method

Country Status (1)

Country Link
JP (1) JPH09162220A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324605A (en) * 2006-06-02 2007-12-13 Robert Bosch Gmbh Bonding wire for connection between contacting surfaces and bonding wire connection portion between contacting surfaces
US8030578B2 (en) 2006-02-09 2011-10-04 Fujitsu Limited Electronic component and substrate unit
JP2013149802A (en) * 2012-01-19 2013-08-01 Shindengen Electric Mfg Co Ltd Method of manufacturing semiconductor device, semiconductor device, and connector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030578B2 (en) 2006-02-09 2011-10-04 Fujitsu Limited Electronic component and substrate unit
JP2007324605A (en) * 2006-06-02 2007-12-13 Robert Bosch Gmbh Bonding wire for connection between contacting surfaces and bonding wire connection portion between contacting surfaces
JP2013149802A (en) * 2012-01-19 2013-08-01 Shindengen Electric Mfg Co Ltd Method of manufacturing semiconductor device, semiconductor device, and connector

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