JPH09124390A - Device for growing single crystal - Google Patents
Device for growing single crystalInfo
- Publication number
- JPH09124390A JPH09124390A JP30526095A JP30526095A JPH09124390A JP H09124390 A JPH09124390 A JP H09124390A JP 30526095 A JP30526095 A JP 30526095A JP 30526095 A JP30526095 A JP 30526095A JP H09124390 A JPH09124390 A JP H09124390A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- container
- single crystal
- moving
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体、酸化物、
各種の無機化合物等の単結晶を成長する装置に関するも
のである。TECHNICAL FIELD The present invention relates to semiconductors, oxides,
The present invention relates to an apparatus for growing a single crystal of various inorganic compounds.
【０００２】[0002]
【従来の技術】従来より、半導体、酸化物、各種の無機
化合物等の単結晶の成長では、結晶原料を坩堝やアンプ
ル等の容器に入れ、これをヒ−タ−に対して相対的に移
動することにより結晶を成長する方法が広く行なわれて
いる。即ち、ブリッジマン法、ゾ−ンメルティング法等
がこの方法に属する。2. Description of the Related Art Conventionally, in the growth of single crystals of semiconductors, oxides, various inorganic compounds, etc., a crystal raw material is placed in a container such as a crucible or an ampoule and moved relative to a heater. A method of growing a crystal by doing so is widely used. That is, the Bridgman method, the zone melting method and the like belong to this method.
【０００３】ブリッジマン法の概要を図５を用いて説明
する。ブリッジマン法では、結晶原料は坩堝やアンプル
等の容器１に入れられ、ヒ−タ−２により加熱、溶解さ
れる。さらに、相対的にこの容器を低温部側へ徐々に移
動することによって、溶融した原料３から単結晶４を容
器の低温側に析出、成長させるものである。An outline of the Bridgman method will be described with reference to FIG. In the Bridgman method, the crystal raw material is placed in a container 1 such as a crucible or an ampoule, and heated and melted by a heater-2. Furthermore, the single crystal 4 is deposited and grown from the molten raw material 3 on the low temperature side of the container by gradually moving the container relatively to the low temperature side.
【０００４】次に、ゾ−ンメルティング法の概要を図６
を用いて説明する。ゾ−ンメルティング法では、原料５
を坩堝やアンプル等の容器１に入れ、容器中の一部の原
料のみを局部的に加熱溶解して、溶融帯６を形成する。
さらに、相対的にこの容器１をヒ−タ−２に対して徐々
に移動することによって、溶融帯６の一方で原料の溶解
を、反対側で単結晶４の成長を行なうものである。尚、
溶融帯を始めに形成する部分に、結晶の溶媒となる材料
を加えて、成長する結晶の融点よりも低温で溶融帯を形
成する方法であるトラベリングヒ−タ−法もこのゾ−ン
メルティング法のひとつであるといえる。Next, an outline of the zone melting method is shown in FIG.
This will be described with reference to FIG. In the zone melting method, raw material 5
Is placed in a container 1 such as a crucible or an ampoule, and only a part of the raw material in the container is locally heated and melted to form a melting zone 6.
Further, by gradually moving the container 1 relative to the heater-2, the raw material is melted on one side of the melting zone 6 and the single crystal 4 is grown on the opposite side. still,
A traveling heater method, which is a method of forming a melting zone at a temperature lower than the melting point of a growing crystal by adding a material serving as a solvent for the crystal to a portion where the melting zone is formed first, is also a zone melting method. It can be said to be one of the laws.
【０００５】図７は、従来のトラベリングヒ−タ−法に
よる結晶成長装置を示す図であり、架台に固定されたヒ
−タ−２に対し結晶原料を入れた結晶成長アンプル１が
移動ステ−ジ１１にチャック１２で固定されており、こ
の移動ステ−ジ１１は、パルスモ−タ−１３、減速ギア
１４、ボ−ルネジ１５およびガイドレ−ル１６によって
構成される一組の移動機構によって、ヒ−タ−２の軸方
向に対して下向きに移動して単結晶を成長させる。FIG. 7 is a diagram showing a conventional crystal growth apparatus by a traveling heater method, in which a crystal growth ampoule 1 containing a crystal raw material is moved to a heater-2 fixed on a gantry. The moving stage 11 is fixed to the gear 11 by a chuck 12, and the moving stage 11 is moved by a set of moving mechanism composed of a pulse motor 13, a reduction gear 14, a ball screw 15 and a guide rail 16. -Move downward with respect to the axial direction of the second axis to grow a single crystal.
【０００６】以上示したように、半導体、酸化物、各種
無機化合物等の単結晶の成長では、原料の入った容器を
ヒ−タ−に対して徐々に移動することによって行なわれ
ることが多い。As described above, the growth of single crystals of semiconductors, oxides, various inorganic compounds, etc. is often carried out by gradually moving the container containing the raw material with respect to the heater.
【０００７】[0007]
【発明が解決しようとする課題】以上のような結晶成長
方法においては、成長装置内の温度が極めて安定してい
ること、原料の入った容器がヒ−タ−に対して相対的に
極めてスム−ズに動くことが要求される。相対的な動き
とは、即ち、容器が不動のままヒ−タ−が移動しても良
いし、ヒ−タ−が不動のまま容器が移動してもかまわな
いことをいう。In the above crystal growth method, the temperature in the growth apparatus is extremely stable, and the container containing the raw material is extremely smooth relative to the heater. -It is required to move. Relative movement means that the heater may move while the container remains stationary, or the container may move while the heater remains stationary.
【０００８】成長装置内の温度安定性は、近年の温度コ
ントロ−ラ−の進歩により、十分な性能（例えば温度の
安定性が±０．１℃以内）を低コストで実現できるよう
になっている。With regard to the temperature stability in the growth apparatus, due to the recent progress of the temperature controller, it has become possible to realize sufficient performance (for example, temperature stability within ± 0.1 ° C.) at low cost. There is.
【０００９】一方、容器とヒ−タ−の相対的な移動は、
その移動速度が一般に極めて小さい（トラベリングヒ−
タ−法では２〜５ｍｍ／日、通常のゾ−ンメルティング
法やブリッジマン法で２０〜５０ｍｍ／日）ため、この
速度域でスム−ズな動きを得るための装置はかなり高価
になるという問題がある。On the other hand, the relative movement of the container and the heater is
The traveling speed is generally extremely low (traveling hear
(2-5 mm / day for the Turer method and 20-50 mm / day for the normal zone-melting method and Bridgman method), the device for obtaining smooth movement in this speed range is considerably expensive. There is a problem.
【００１０】一般的なブリッジマン結晶成長装置の場
合、概ねヒ−タ−と、原料が入った容器（或いはヒ−タ
−）の移動装置にかかるコストは同程度である。ゾ−ン
メルティング法による結晶成長装置に於いては、ヒ−タ
−は小型で安価となるため、コストのほとんどが移動装
置にかかる。In the case of a general Bridgman crystal growth apparatus, the cost of the heater and the cost of the apparatus for moving the container (or the heater) containing the raw materials are almost the same. In the crystal growth apparatus using the zone melting method, since the heater is small and inexpensive, most of the cost is spent on the moving apparatus.
【００１１】このように、原料が入った容器をヒ−タ−
に対して相対的に移動することによって単結晶を成長す
る方法に於いては、容器（もしくはヒ−タ−）の移動装
置に多大のコストがかかり、結果的に製造された単結晶
のコストを大きく押し上げてしまうといった問題があっ
た。As described above, the container containing the raw material is heated by the heater.
In the method of growing a single crystal by moving it relative to, the container (or heater) moving device requires a great deal of cost, and as a result, the cost of the manufactured single crystal is reduced. There was a problem of pushing it up significantly.
【００１２】[0012]
【課題を解決するための手段および作用】本発明者ら
は、以上のように単結晶成長装置において、原料が入っ
た容器或いはヒ−タ−の移動装置が単結晶成長装置のコ
ストを引き上げていることに着目し、本発明に至った。As described above, the inventors of the present invention have found that, in the single crystal growth apparatus, the container or the heater moving device containing the raw material raises the cost of the single crystal growth apparatus. The present invention has been made paying attention to the fact that it is present.
【００１３】即ち、本発明は、結晶原料が入った容器
を、ヒ−タ−に対して相対的に移動することによって、
単結晶を成長する装置において、当該容器とヒ−タ−と
の組が複数あり、かつ、当該容器とヒ−タ−とを相対的
に移動するための機構がひとつであることを特徴とする
単結晶成長装置を提供するものである。That is, according to the present invention, by moving the container containing the crystal raw material relative to the heater,
An apparatus for growing a single crystal is characterized in that there are a plurality of sets of the container and the heater, and that there is one mechanism for relatively moving the container and the heater. A single crystal growth apparatus is provided.
【００１４】以下に、トラベリングヒ−タ−法の結晶製
造装置を例に、本発明の実施方法について図１，２およ
び３を用いて、具体的に述べる。The method for carrying out the present invention will be described in detail below with reference to FIGS. 1, 2 and 3 by taking as an example a crystal producing apparatus of the traveling heater method.
【００１５】本発明を実施するには図１および２のよう
にヒ−タ−２を不動とし、アンプルなどの結晶成長容器
１を移動するか、図３のようにヒ−タ−２を移動し、ア
ンプルなどの結晶成長容器１を不動とするかの２通りが
ある。図１および２では、２本の結晶成長容器は、移動
ステ−ジ１１にチャック１２で固定されており、この移
動ステ−ジ１１は、パルスモ−タ−１３、減速ギア１
４、ボ−ルネジ１５およびガイドレ−ル１６によって構
成される一組の移動機構によって、ヒ−タ−２の軸方向
に対して移動する。移動ステ−ジ１１は図１のようにヒ
−タ−２の下部に設けても図２のようにヒ−タ−２の上
部に設けることもできる。図３では、２つのヒ−タ−２
を移動ステ−ジ１１に固定し、この移動ステ−ジ１１
を、パルスモ−タ−１３、減速ギア１４、ボ−ルネジ１
５およびガイドレ−ル１６によって構成される一組の移
動機構によって、不動の結晶成長容器に対して移動す
る。To carry out the present invention, the heater-2 is immovable as shown in FIGS. 1 and 2, and the crystal growth container 1 such as an ampoule is moved, or the heater-2 is moved as shown in FIG. However, there are two ways of immobilizing the crystal growth container 1 such as an ampoule. In FIGS. 1 and 2, two crystal growth vessels are fixed to a moving stage 11 by a chuck 12, and the moving stage 11 includes a pulse motor 13 and a reduction gear 1.
4, a set of moving mechanism constituted by the ball screw 15 and the guide rail 16 moves in the axial direction of the heater-2. The moving stage 11 can be provided below the heater-2 as shown in FIG. 1 or above the heater-2 as shown in FIG. In FIG. 3, two heaters-2
Is fixed to the moving stage 11, and this moving stage 11
Pulse motor 13, reduction gear 14, ball screw 1
A set of moving mechanism constituted by 5 and the guide rail 16 moves the fixed crystal growth container.
【００１６】図１，２および３では結晶成長容器及びヒ
−タ−は２組としてあるが、本発明は、もちろんこれ以
上とすることもできる。また、移動ステ−ジの駆動機構
もここで示したパルスモ−タ−、減速ギア、ボ−ルネジ
を使用した以外の方法でも構わない。さらに、ここでは
トラベリングヒ−タ−法の結晶成長装置について示した
が、他のブリッジマン法やゾ−ンメルティング法の装置
でも同様の構造で、本発明を実施できるのは明白であ
る。以下に実施例と比較例を示し、詳細に本発明を説明
する。In FIGS. 1, 2 and 3, the crystal growth container and the heater are provided in two sets, but the present invention can of course be provided in more sets. The drive mechanism for the moving stage may be a method other than the one using the pulse motor, reduction gear and ball screw shown here. Further, although the crystal growth apparatus of the traveling heater method has been shown here, it is obvious that the present invention can be implemented by other apparatuses of the Bridgman method and the zone melting method with a similar structure. Hereinafter, the present invention will be described in detail by showing Examples and Comparative Examples.
【００１７】[0017]
【発明の実施の形態】図４に本発明を実施したトラベリ
ングヒ−タ−法による単結晶成長装置を示す。この結晶
成長装置は、結晶成長アンプルの移動機構１台とヒ−タ
−４台からなり、４本の単結晶を同時に成長することが
できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 4 shows an apparatus for growing a single crystal by the traveling heater method embodying the present invention. This crystal growth apparatus comprises one crystal growth ampoule moving mechanism and four heaters, and can grow four single crystals at the same time.
【００１８】原料の入った石英アンプル１の底部には支
持棒１７がついており、これは固定チャック１２で移動
ステ−ジ１１に固定される。移動ステ−ジ１１の上下に
より、４本すべてのアンプル１の移動が同時に可能であ
る。移動ステ−ジ１１の上下駆動は、モ−タ−１２、減
速ギア１４、ボ−ルねじ１５およびガイドレ−ル１６を
介して行われる。A support rod 17 is attached to the bottom of the quartz ampoule 1 containing the raw material, which is fixed to the moving stage 11 by a fixed chuck 12. By moving the moving stage 11 up and down, all four ampoules 1 can be moved at the same time. The vertical movement of the moving stage 11 is performed via the motor 12, the reduction gear 14, the ball screw 15, and the guide rail 16.
【００１９】本結晶成長装置の作製に要するコストは図
７に示す従来型の装置の１．６倍であるが、生産量が４
倍となることにより、単結晶１本当りの装置のコストを
従来の４割に低減できる。The production cost of this crystal growth apparatus is 1.6 times that of the conventional apparatus shown in FIG. 7, but the production amount is 4 times.
By doubling the cost, the cost of the device per single crystal can be reduced to 40% of the conventional cost.
【００２０】[0020]
【発明の効果】以上のように、本発明によれば、原料の
入った容器の移動装置（或いはヒ−タ−移動装置）一台
で複数の単結晶を一度に成長できることになり、即ちこ
れは、結晶成長炉一台当たりの移動装置のコストが大幅
に低下することを意味し、ひいては単結晶の製造コスト
を大幅に下げることができるという効果がある。As described above, according to the present invention, it is possible to grow a plurality of single crystals at one time with one moving device (or heater moving device) for a container containing raw materials, that is, Means that the cost of the moving device per one crystal growth furnace is significantly reduced, which in turn has the effect of significantly reducing the manufacturing cost of the single crystal.
【図１】 本発明の１実施例を示したもので、ヒ−タ−
を不動とし、アンプルなどの結晶成長容器を移動する場
合の装置の例である。FIG. 1 shows an embodiment of the present invention, in which a heater
Is an example of an apparatus in which a crystal growth container such as an ampoule is moved while making the unit immobile.
【図２】 本発明の１実施例を示したもので、ヒ−タ−
を不動とし、アンプルなどの結晶成長容器を移動する場
合の装置の他の例である。FIG. 2 shows an embodiment of the present invention, in which a heater
Is another example of an apparatus for moving a crystal growth container such as an ampoule while keeping a stationary state.
【図３】 本発明の１実施例を示したもので、ヒ−タ−
を移動し、アンプルなどの結晶成長容器を不動とした場
合の例である。FIG. 3 shows an embodiment of the present invention.
This is an example of a case in which the crystal growth container such as an ampoule is moved by moving the.
【図４】 本発明の１実施例を示したもので、１台のア
ンプル移動機構で、４つのアンプルを同時に移動し、結
晶成長することが可能なトラベリングヒ−タ−法による
結晶成長装置である。FIG. 4 shows an embodiment of the present invention, which is a crystal growth apparatus using a traveling heater method capable of simultaneously moving four ampoules by one ampoule moving mechanism to grow crystals. is there.
【図５】 ブリッジマン法による結晶成長方法の概要を
示す図である。FIG. 5 is a diagram showing an outline of a crystal growth method by a Bridgman method.
【図６】 ゾ−ンメルティング法による結晶成長方法の
概要を示す図である。FIG. 6 is a diagram showing an outline of a crystal growth method by a zone melting method.
【図７】 従来のトラベリングヒ−タ−法による結晶成
長装置を示す図である。FIG. 7 is a diagram showing a crystal growth apparatus by a conventional traveling heater method.
Claims (1)
して相対的に移動することによって、単結晶を成長する
装置において、当該容器とヒ−タ−との組が複数あり、
かつ、当該容器とヒ−タ−とを相対的に移動するための
機構がひとつであることを特徴とする単結晶成長装置。1. An apparatus for growing a single crystal by moving a container containing a crystal raw material relative to a heater, wherein there are a plurality of sets of the container and the heater,
A single crystal growth apparatus having one mechanism for relatively moving the container and the heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30526095A JP2933517B2 (en) | 1995-10-31 | 1995-10-31 | Single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30526095A JP2933517B2 (en) | 1995-10-31 | 1995-10-31 | Single crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09124390A true JPH09124390A (en) | 1997-05-13 |
| JP2933517B2 JP2933517B2 (en) | 1999-08-16 |
Family
ID=17942966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30526095A Expired - Fee Related JP2933517B2 (en) | 1995-10-31 | 1995-10-31 | Single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2933517B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0947610A3 (en) * | 1998-03-31 | 2002-01-23 | Ngk Insulators, Ltd. | A single crystal-manufacturing equipment and a method for manufacturing the same |
| JP2012519132A (en) * | 2009-02-26 | 2012-08-23 | コーニング インコーポレイテッド | Templated growth of porous or non-porous castings |
| JP2012528067A (en) * | 2009-05-28 | 2012-11-12 | コーニング インコーポレイテッド | Oriented porous substrate by directional melting and re-solidification |
-
1995
- 1995-10-31 JP JP30526095A patent/JP2933517B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0947610A3 (en) * | 1998-03-31 | 2002-01-23 | Ngk Insulators, Ltd. | A single crystal-manufacturing equipment and a method for manufacturing the same |
| JP2012519132A (en) * | 2009-02-26 | 2012-08-23 | コーニング インコーポレイテッド | Templated growth of porous or non-porous castings |
| US9238594B2 (en) | 2009-02-26 | 2016-01-19 | Corning Incorporated | Templated growth of porous or non-porous castings |
| JP2012528067A (en) * | 2009-05-28 | 2012-11-12 | コーニング インコーポレイテッド | Oriented porous substrate by directional melting and re-solidification |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2933517B2 (en) | 1999-08-16 |
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