JPH09114100A - Laser aligning and drawing device - Google Patents

Laser aligning and drawing device

Info

Publication number
JPH09114100A
JPH09114100A JP7274479A JP27447995A JPH09114100A JP H09114100 A JPH09114100 A JP H09114100A JP 7274479 A JP7274479 A JP 7274479A JP 27447995 A JP27447995 A JP 27447995A JP H09114100 A JPH09114100 A JP H09114100A
Authority
JP
Japan
Prior art keywords
laser
optical system
light source
drawing apparatus
exposure drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7274479A
Other languages
Japanese (ja)
Inventor
Shigeru Akao
茂 赤尾
Keiichi Kimura
景一 木村
Motohisa Haga
元久 羽賀
Hiroaki Tanaka
宏明 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP7274479A priority Critical patent/JPH09114100A/en
Publication of JPH09114100A publication Critical patent/JPH09114100A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To remove polarizing optics to realize a small-size device by using a laser light source having a specified resonator and an external resonator and aligning the laser light source, optics and the body to be irradiated along a straight line in such a manner that the optical pass from the laser light source to the objective body is a straight line. SOLUTION: The laser light source 11 is equipped with a resonator to generate second harmonic waves such as a Nd:YAG laser and an external resonator to generate fourth harmonic waves of the Nd:YAG laser. The resonator is equipped with a 1/4 wavelength plate and a nonlinear optical crystal KTiOPO4 (KTP) internally and has a structure to generate second harmonic waves by excitation with light through an optical fiber bundle connected to a ultrahigh output semiconductor laser. The external resonator is equipped with β-BaB2 O4 and external resonant mirrors driven by a voice coil-type electromagnetic device. The illuminating optics 14, reticle 15, projecting optics or reducing optics 16, and a wafer 31 are aligned along a straight line, and thereby, the optical pass is a straight line.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子、マス
ク、レクチル等の製造においてレーザを利用して微細加
工を行うためのレーザ露光描画装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser exposure drawing apparatus for performing fine processing using a laser in manufacturing semiconductor elements, masks, reticles and the like.

【０００２】[0002]

【従来の技術】半導体素子、マスク、レクチル等の製造
分野では、ウエハに微細パターンを形成するためのレー
ザ露光描画装置が使用される。斯かるレーザ露光描画装
置は、典型的には、レーザ光源と投影光学系又は縮小光
学系を含む光学系と被照射体と被照射体を光軸に対して
直交する面内にて移動させるための移動装置とを有す
る。2. Description of the Related Art A laser exposure drawing apparatus for forming a fine pattern on a wafer is used in the field of manufacturing semiconductor devices, masks, reticles and the like. Such a laser exposure drawing apparatus typically moves an optical system including a laser light source and a projection optical system or a reduction optical system, an irradiated body, and an irradiated body in a plane orthogonal to the optical axis. And a moving device.

【０００３】半導体素子を製造する場合には、光学系に
は原型パターンを有するレクチル又はマスクが配置され
る。レーザビームによってレクチル又はマスクの像が被
照射体であるウエハ上に形成される。When manufacturing a semiconductor device, a reticle or mask having an original pattern is arranged in an optical system. An image of a reticle or mask is formed on the wafer to be irradiated by the laser beam.

【０００４】レーザ光源として波長が４００ｎｍ以下の
レーザ、即ち、紫外線レーザが使用されている。紫外線
レーザを使用すると、加工中に熱が発生しにくく熱歪み
が少ない非熱加工、即ちアブレーション加工が可能であ
る。A laser having a wavelength of 400 nm or less, that is, an ultraviolet laser is used as a laser light source. When an ultraviolet laser is used, it is possible to perform non-thermal processing, that is, ablation processing in which heat is hardly generated during processing and thermal distortion is small.

【０００５】斯かる紫外線レーザとして、例えば、エキ
シマレーザ（ＡｒＦ：λ＝１９３ｎｍ）、エキシマレー
ザ（ＫｒＦ：λ＝２４９ｎｍ）、Ｎｄ：ＹＡＧレーザの
第４高調波（λ＝２６６ｎｍ）等がある。Examples of such an ultraviolet laser include an excimer laser (ArF: λ = 193 nm), an excimer laser (KrF: λ = 249 nm), and a fourth harmonic (λ = 266 nm) of an Nd: YAG laser.

【０００６】[0006]

【発明が解決しようとする課題】従来のレーザ露光描画
装置では、レーザ光源の容積が大きいために、レーザ光
源と投影光学系又は縮小光学系を収容するハウジングと
を互いに近接して配置することができなかった。従っ
て、レーザ光源と投影光学系又は縮小光学系の間に偏向
光学系が設けられ、レーザ光源からのレーザ光は偏向光
学系を経由して投影光学系又は縮小光学系に導かれてい
た。In the conventional laser exposure drawing apparatus, since the volume of the laser light source is large, the laser light source and the housing for accommodating the projection optical system or the reduction optical system may be arranged close to each other. could not. Therefore, the deflection optical system is provided between the laser light source and the projection optical system or the reduction optical system, and the laser light from the laser light source is guided to the projection optical system or the reduction optical system via the deflection optical system.

【０００７】従来のレーザ露光描画装置は、偏向光学系
を含み、光路が長くなり、外乱の影響を受け易いという
欠点があった。The conventional laser exposure drawing apparatus has a drawback that it includes a deflection optical system, has a long optical path, and is easily affected by disturbance.

【０００８】従来のレーザ露光描画装置は、偏向光学系
を含み、偏向毎に光の波面が乱れるという欠点があっ
た。The conventional laser exposure drawing apparatus includes a deflection optical system and has a drawback that the wavefront of light is disturbed for each deflection.

【０００９】従来のレーザ露光描画装置は、偏向光学系
を含み、光路が長くなり、装置が大型化するという欠点
があった。The conventional laser exposure drawing apparatus has a drawback that it includes a deflection optical system, the optical path becomes long, and the apparatus becomes large.

【００１０】[0010]

【課題を解決するための手段】本発明によると、レーザ
光源からのレーザ光束を走査させて被照射体の表面に露
光描画を形成するためのレーザ露光描画装置において、
上記レーザ光源はＮｄ：ＹＡＧレーザの第２高調波を発
生させるための共振器とＮｄ：ＹＡＧレーザの第４高調
波を発生させるための外部共振器とを有し、上記レーザ
光源から上記被照射体までの光路が１直線になるよう
に、上記レーザ光源と光学系と上記被照射体は１直線に
沿って配置されている。According to the present invention, in a laser exposure drawing apparatus for forming an exposure drawing on the surface of an object to be irradiated by scanning a laser beam from a laser light source,
The laser light source has a resonator for generating the second harmonic of the Nd: YAG laser and an external resonator for generating the fourth harmonic of the Nd: YAG laser. The laser light source, the optical system, and the irradiated body are arranged along a straight line so that the optical path to the body is a straight line.

【００１１】従ってレーザ露光描画装置より偏向光学系
が除去されている。本発明のレーザ露光描画装置は、偏
向光学系を含まないから、レーザ光源から被照射体まで
の光路が短く、外乱の影響を受けることはない。更に、
偏向毎に光の波面が乱れるという欠点がない。Therefore, the deflection optical system is removed from the laser exposure drawing apparatus. Since the laser exposure drawing apparatus of the present invention does not include the deflection optical system, the optical path from the laser light source to the irradiation target is short and is not affected by disturbance. Furthermore,
There is no drawback that the wavefront of light is disturbed with each deflection.

【００１２】本発明によると、レーザ露光描画装置にお
いて、上記第２高調波を発生させるための共振器は、そ
の内部に１／４波長板と非線形光学結晶ＫＴｉＯＰＯ4
（ＫＴＰ）とを有し、超高出力半導体レーザ結合の光フ
ァイバーバンドル励起によって第２高調波を発生させる
ように構成されている。また、上記第４高調波を発生さ
せるための外部共振器はβ−ＢａＢ2 Ｏ4 とボイスコイ
ル型電磁デバイスにより駆動される外部共振ミラーを有
する。According to the present invention, in the laser exposure drawing apparatus, the resonator for generating the second harmonic wave has a quarter-wave plate and a nonlinear optical crystal KTiOPO 4 therein.
(KTP), and is configured to generate the second harmonic by the optical fiber bundle excitation of the ultra-high power semiconductor laser coupling. The external resonator for generating the fourth harmonic has an external resonant mirror driven by β-BaB 2 O 4 and a voice coil type electromagnetic device.

【００１３】本発明によると、レーザ露光描画装置にお
いて、上記レーザ光源の、励起用光源を除く共振器の部
分の寸法、即ち、上記１／４波長板からＮｄ：ＹＡＧレ
ーザの第４高調波の射出部までの寸法は、幅２１０ｍ
ｍ、奥行３００ｍｍ、高さ１００ｍｍのハウジング内に
収容されることができる。従って装置を小型化すること
ができる。According to the present invention, in the laser exposure drawing apparatus, the size of the resonator portion of the laser light source excluding the excitation light source, that is, from the quarter wavelength plate to the fourth harmonic of the Nd: YAG laser Width up to the injection part is 210m
m, depth 300 mm, height 100 mm. Therefore, the size of the device can be reduced.

【００１４】本発明によると、レーザ露光描画装置にお
いて、上記光学系は照明光学系と投影光学系又は縮小光
学系とを有する。また上記照明光学系と投影光学系又は
縮小光学系との間にレクチル又はマスクが配置されてい
る。According to the present invention, in the laser exposure drawing apparatus, the optical system has an illumination optical system and a projection optical system or a reduction optical system. Further, a reticle or a mask is arranged between the illumination optical system and the projection optical system or the reduction optical system.

【００１５】[0015]

【発明の実施の形態】以下に図１を参照して本発明の実
施例について説明する。図１は本発明によるレーザ露光
描画装置の外観を示す。DETAILED DESCRIPTION OF THE INVENTION An embodiment of the present invention will be described below with reference to FIG. FIG. 1 shows the appearance of a laser exposure drawing apparatus according to the present invention.

【００１６】本例のレーザ露光描画装置はレーザ光源１
１と照明光学系１４とレクチル１５と投影光学系又は縮
小光学系１６とウエハ３１を移動可能に支持するウエハ
ステージ３２とウエハステージ３２を支持する支持台３
４とウエハステージ３２の移動量を検出する測長器又は
レーザ干渉系３３とを有する。The laser exposure drawing apparatus of this example is a laser light source 1.
1, an illumination optical system 14, a reticle 15, a projection optical system or a reduction optical system 16, a wafer stage 32 that movably supports the wafer 31, and a support base 3 that supports the wafer stage 32.
4 and a length measuring device or a laser interference system 33 for detecting the amount of movement of the wafer stage 32.

【００１７】ウエハステージ３２はウエハ３１をＸ軸方
向に移動させるためのＸウエハステージ３２Ｘとウエハ
３１をＹ軸方向に移動させるためのＹウエハステージ３
２Ｙとを有し、測長器３３はＸウエハステージ３２Ｘの
Ｘ軸方向の移動量を検出するためのＸ測長器３３ＸとＹ
ウエハステージ３２ＹのＹ軸方向の移動量を検出するた
めのＹ測長器３３Ｙとを有する。The wafer stage 32 is an X wafer stage 32X for moving the wafer 31 in the X axis direction and a Y wafer stage 3 for moving the wafer 31 in the Y axis direction.
2Y, and the length measuring device 33 has X length measuring devices 33X and Y for detecting the movement amount of the X wafer stage 32X in the X axis direction.
It has a Y length measuring device 33Y for detecting the amount of movement of the wafer stage 32Y in the Y-axis direction.

【００１８】本例によると、レーザ光源１１は、Ｎｄ：
ＹＡＧレーザの第２高調波を発生させるための共振器と
Ｎｄ：ＹＡＧレーザの第４高調波を発生させるための外
部共振器とを有する。第２高調波を発生させるための共
振器は、その内部に１／４波長板と非線形光学結晶ＫＴ
ｉＯＰＯ4 （ＫＴＰ）とを有し、超高出力半導体レーザ
結合の光ファイバーバンドル励起によって第２高調波を
発生させるように構成されている。第４高調波を発生さ
せるための外部共振器はβ−ＢａＢ2 Ｏ4 とボイスコイ
ル型電磁デバイスにより駆動される外部共振ミラーを有
する。According to this example, the laser light source 11 has a Nd:
It has a resonator for generating the second harmonic of the YAG laser and an external resonator for generating the fourth harmonic of the Nd: YAG laser. The resonator for generating the second harmonic has a quarter wave plate and a nonlinear optical crystal KT inside.
iOPO 4 (KTP) and is configured to generate a second harmonic by pumping an optical fiber bundle with an ultra-high power semiconductor laser. The external resonator for generating the fourth harmonic has an external resonant mirror driven by β-BaB 2 O 4 and a voice coil type electromagnetic device.

【００１９】斯かるレーザ光源１１の例は、例えば、本
願出願人と同一の出願人によって出願された特願平４−
７９３５１号（特開平５−２４３６６２号公報）及び特
願平４−７８７５３号（特開平５−２４３６６１号公
報）に記載されており、詳細は同出願を参照されたい。An example of such a laser light source 11 is, for example, Japanese Patent Application No.
79351 (Japanese Patent Application Laid-Open No. 5-243662) and Japanese Patent Application No. 4-78753 (Japanese Patent Application Laid-Open No. 5-243661), the details of which are to be referred to.

【００２０】本例のレーザ光源１１によると、励起用光
源を除く共振器の部分の寸法、即ち、１／４波長板から
Ｎｄ：ＹＡＧレーザの第４高調波の射出部までの寸法
は、幅２１０ｍｍ、奥行３００ｍｍ、高さ１００ｍｍの
ハウジング内に収容されることができる。According to the laser light source 11 of this example, the dimension of the resonator portion excluding the pumping light source, that is, the dimension from the quarter-wave plate to the emission portion of the fourth harmonic of the Nd: YAG laser is wide. It can be housed in a housing of 210 mm, depth 300 mm, height 100 mm.

【００２１】こうして本例によると、レーザ光源１１は
小型でコンパクトであり、特に光軸方向の寸法（高さ）
が小さい。従って、斯かるレーザ光源１１を含むレーザ
露光描画装置は、偏向光学系を含むことなく、小型化す
ることができる。Thus, according to this example, the laser light source 11 is small and compact, and in particular, the dimension (height) in the optical axis direction.
Is small. Therefore, the laser exposure drawing apparatus including such a laser light source 11 can be downsized without including the deflection optical system.

【００２２】図示の例では、照明光学系１４とレクチル
１５と投影光学系又は縮小光学系１６とウエハ３１とは
１直線に沿って配置されており、従ってレーザ光源１１
からウエハ３１までの光路は１直線である。本例による
と偏向光学系を含まないから、レーザ露光描画装置をコ
ンパクトな縦型に構成することができる。In the illustrated example, the illumination optical system 14, the reticle 15, the projection optical system or the reduction optical system 16 and the wafer 31 are arranged along a straight line, and therefore the laser light source 11 is used.
The optical path from the wafer to the wafer 31 is a straight line. According to this example, since the deflection optical system is not included, the laser exposure drawing apparatus can be configured in a compact vertical type.

【００２３】レーザ光源１１より発生したレーザ光束１
２は照明光学系１４を経由してレクチル１５に導かれ
る。レーザ光束１２は、斯かる照明光学系１４を経由す
ることによってレーザエネルギ強度分布が均一になるよ
うに成形される。斯かるレーザ光束１２はレクチル１５
及び投影光学系１６を経由してウエハ３１上に導かれ
る。レーザ光束１２は、斯かる投影光学系１６を経由す
ることによってその球面収差及び非点収差が補正され
る。Laser beam 1 generated from laser light source 11
2 is guided to the reticle 15 via the illumination optical system 14. The laser light flux 12 is shaped so as to have a uniform laser energy intensity distribution by passing through the illumination optical system 14. Such a laser beam 12 is a reticle 15
And is guided onto the wafer 31 via the projection optical system 16. The laser light flux 12 is corrected for its spherical aberration and astigmatism by passing through the projection optical system 16.

【００２４】投影光学系１６によって形成されたレクチ
ル１５の焦点像がウエハ３１の被照射面上に乗るよう
に、ウエハ３１は投影光学系１６に対して配置される。The wafer 31 is arranged with respect to the projection optical system 16 so that the focus image of the reticle 15 formed by the projection optical system 16 is placed on the illuminated surface of the wafer 31.

【００２５】ウエハ３１の表面に所定の露光描画パター
ンを形成する場合には、ウエハステージ３２を使用して
光軸に直交する方向のウエハ３１の相対的位置が変化さ
れる。レーザ光束１２の光軸に直交する方向のウエハ３
１の位置の検出は測長器即ちレーザ干渉系３３によって
なされ、こうして、レクチルの焦点像はウエハ３１の被
照射面の所定位置に照射される。When a predetermined exposure drawing pattern is formed on the surface of the wafer 31, the relative position of the wafer 31 in the direction orthogonal to the optical axis is changed by using the wafer stage 32. Wafer 3 in a direction orthogonal to the optical axis of laser beam 12
The position 1 is detected by the length measuring device, that is, the laser interference system 33. In this way, the focus image of the reticle is irradiated to a predetermined position on the irradiated surface of the wafer 31.

【００２６】ウエハ３１はウエハステージ３２上にて光
軸に垂直な面即ち水平面に沿って配置されている。ウエ
ハステージ３２を作動することによって、ウエハ３１は
光軸に垂直な水平面に沿って移動される。The wafer 31 is arranged on the wafer stage 32 along a plane perpendicular to the optical axis, that is, a horizontal plane. By operating the wafer stage 32, the wafer 31 is moved along a horizontal plane perpendicular to the optical axis.

【００２７】以上本発明の実施例について詳細に説明し
てきたが、本発明は上述の実施例に限ることなく本発明
の要旨を逸脱することなく他の種々の構成が採り得るこ
とは当業者にとって容易に理解されよう。Although the embodiments of the present invention have been described above in detail, those skilled in the art will understand that the present invention is not limited to the above-mentioned embodiments and various other configurations can be adopted without departing from the gist of the present invention. Easy to understand.

【００２８】[0028]

【発明の効果】本発明によると、レーザ光源１１が小型
且つコンパクトな構成であるため、偏向光学系を除去す
ることができる利点がある。従って偏向毎に波面が乱れ
るという欠点がない利点を有する。According to the present invention, since the laser light source 11 is small and compact, the deflection optical system can be eliminated. Therefore, it has an advantage that the wavefront is not disturbed for each deflection.

【００２９】本発明によると、偏向光学系を除去するこ
とができるから、レーザ露光描画装置の全体寸法を小さ
くしコンパクトな構成とすることができる利点がある。According to the present invention, since the deflection optical system can be removed, there is an advantage that the overall size of the laser exposure drawing apparatus can be reduced and the structure can be made compact.

【００３０】本発明によると、偏向光学系を除去するこ
とができるから、照明光学系とレクチルと投影光学系又
は縮小光学系とウエハとを１直線に沿って配置すること
ができる利点を有する。According to the present invention, since the deflection optical system can be removed, there is an advantage that the illumination optical system, the reticle, the projection optical system or the reduction optical system and the wafer can be arranged along a straight line.

【００３１】本発明によると、偏向光学系を除去するこ
とができるから、レーザ光源からウエハまでの光路を１
直線とすることができる利点を有する。従って外乱等の
影響を受けることがない利点を有する。According to the present invention, since the deflection optical system can be eliminated, the optical path from the laser light source to the wafer is reduced to one.
It has the advantage that it can be a straight line. Therefore, it has an advantage that it is not affected by disturbance or the like.

【００３２】本発明によると、偏向光学系を除去するこ
とができるから、縦型のコンパクトな構成のレーザ露光
描画装置を得ることができる利点を有する。According to the present invention, since the deflection optical system can be removed, there is an advantage that a vertical type laser exposure drawing apparatus having a compact structure can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明によるレーザ露光描画装置の例を示す図
である。FIG. 1 is a diagram showing an example of a laser exposure drawing apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

１１ 光源 １２ レーザ光束 １４ 照明光学系 １５ レクチル １６ 投影光学系又は縮小光学系 ３１ ウエハ ３２ ウエハステージ ３２Ｘ Ｘウエハステージ ３２Ｙ Ｙウエハステージ ３３ 測長器又はレーザ干渉系 ３３Ｘ Ｘ測長器又はレーザ干渉系 ３３Ｙ Ｙ測長器又はレーザ干渉系 ３４ 支持台 Reference Signs List 11 light source 12 laser light flux 14 illumination optical system 15 reticle 16 projection optical system or reduction optical system 31 wafer 32 wafer stage 32X X wafer stage 32Y Y wafer stage 33 length measuring device or laser interference system 33X X length measuring device or laser interference system 33Y Y length measuring device or laser interference system 34 Support stand

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｓ 3/16 Ｈ０１Ｌ 21/30 ５２７ Ｈ０１Ｓ 3/08 (72)発明者 田中 宏明 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01S 3/16 H01L 21/30 527 H01S 3/08 (72) Inventor Hiroaki Tanaka Kitagawa, Shinagawa-ku, Tokyo Shinagawa 6-735 Sony Corporation

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 レーザ光源からのレーザ光束を走査させ
て被照射体の表面に露光描画を形成するためのレーザ露
光描画装置において、 上記レーザ光源はＮｄ：ＹＡＧレーザの第２高調波を発
生させるための共振器とＮｄ：ＹＡＧレーザの第４高調
波を発生させるための外部共振器とを有し、 上記レーザ光源から上記被照射体までの光路が１直線に
なるように、上記レーザ光源と光学系と上記被照射体は
１直線に沿って配置されていることを特徴とするレーザ
露光描画装置。1. A laser exposure drawing apparatus for scanning a laser beam from a laser light source to form an exposure drawing on the surface of an irradiated object, wherein the laser light source generates a second harmonic of an Nd: YAG laser. And an external resonator for generating the fourth harmonic of an Nd: YAG laser, and the laser light source is arranged so that the optical path from the laser light source to the irradiation target is a straight line. A laser exposure drawing apparatus characterized in that an optical system and the object to be irradiated are arranged along a straight line. 【請求項２】 請求項１記載のレーザ露光描画装置にお
いて、上記第２高調波を発生させるための共振器は、そ
の内部に１／４波長板と非線形光学結晶ＫＴｉＯＰＯ4
（ＫＴＰ）とを有し、超高出力半導体レーザ結合の光フ
ァイバーバンドル励起によって第２高調波を発生させる
ように構成されていることを特徴とするレーザ露光描画
装置。2. The laser exposure drawing apparatus according to claim 1, wherein the resonator for generating the second harmonic wave has a quarter wavelength plate and a nonlinear optical crystal KTiOPO 4 therein.
(KTP), and is configured to generate a second harmonic by exciting an optical fiber bundle of an ultra-high power semiconductor laser coupling. 【請求項３】 請求項１又は２記載のレーザ露光描画装
置において、上記第４高調波を発生させるための外部共
振器はβ−ＢａＢ2 Ｏ4 とボイスコイル型電磁デバイス
により駆動される外部共振ミラーを有することを特徴と
するレーザ露光描画装置。3. The laser exposure drawing apparatus according to claim 1, wherein the external resonator for generating the fourth harmonic is an external resonance driven by β-BaB 2 O 4 and a voice coil type electromagnetic device. A laser exposure drawing apparatus having a mirror. 【請求項４】 請求項１、２又は３記載のレーザ露光描
画装置において、上記レーザ光源の、励起用光源を除く
共振器の部分の寸法、即ち、上記１／４波長板からＮ
ｄ：ＹＡＧレーザの第４高調波の射出部までの寸法は、
幅２１０ｍｍ、奥行３００ｍｍ、高さ１００ｍｍのハウ
ジング内に収容されることができることを特徴とするレ
ーザ露光描画装置。4. The laser exposure drawing apparatus according to claim 1, 2 or 3, wherein the size of the resonator portion of the laser light source excluding the excitation light source, that is, the quarter wavelength plate to N.
The dimension up to the 4th harmonic emission part of the d: YAG laser is
A laser exposure drawing apparatus, which can be housed in a housing having a width of 210 mm, a depth of 300 mm, and a height of 100 mm. 【請求項５】 請求項１、２、３又は４記載のレーザ露
光描画装置において、上記光学系は照明光学系と投影光
学系又は縮小光学系とを有することを特徴とするレーザ
露光描画装置。5. The laser exposure drawing apparatus according to claim 1, 2, 3 or 4, wherein the optical system has an illumination optical system and a projection optical system or a reduction optical system. 【請求項６】 請求項５記載のレーザ露光描画装置にお
いて、上記照明光学系と投影光学系又は縮小光学系との
間にレクチル又はマスクが配置されていることを特徴と
するレーザ露光描画装置。6. The laser exposure drawing apparatus according to claim 5, wherein a reticle or a mask is arranged between the illumination optical system and the projection optical system or the reduction optical system.
JP7274479A 1995-10-23 1995-10-23 Laser aligning and drawing device Pending JPH09114100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7274479A JPH09114100A (en) 1995-10-23 1995-10-23 Laser aligning and drawing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7274479A JPH09114100A (en) 1995-10-23 1995-10-23 Laser aligning and drawing device

Publications (1)

Publication Number Publication Date
JPH09114100A true JPH09114100A (en) 1997-05-02

Family

ID=17542270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7274479A Pending JPH09114100A (en) 1995-10-23 1995-10-23 Laser aligning and drawing device

Country Status (1)

Country Link
JP (1) JPH09114100A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020651A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Exposure device with laser device
WO2001020398A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Exposure device with laser device
EP1158283B1 (en) * 2000-05-23 2003-07-30 Fuji Photo Film Co., Ltd. Dynamic change detecting method, dynamic change detecting apparatus and ultrasonic diagnostic apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020651A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Exposure device with laser device
WO2001020398A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Exposure device with laser device
US6901090B1 (en) 1999-09-10 2005-05-31 Nikon Corporation Exposure apparatus with laser device
US6947123B1 (en) 1999-09-10 2005-09-20 Nikon Corporation Exposure device with laser device
US7212275B2 (en) 1999-09-10 2007-05-01 Nikon Corporation Exposure apparatus with laser device
JP4517271B2 (en) * 1999-09-10 2010-08-04 株式会社ニコン Exposure apparatus equipped with a laser device
EP1158283B1 (en) * 2000-05-23 2003-07-30 Fuji Photo Film Co., Ltd. Dynamic change detecting method, dynamic change detecting apparatus and ultrasonic diagnostic apparatus

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