JPH0878346A - Plasma film-formation apparatus - Google Patents
Plasma film-formation apparatusInfo
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- JPH0878346A JPH0878346A JP23598994A JP23598994A JPH0878346A JP H0878346 A JPH0878346 A JP H0878346A JP 23598994 A JP23598994 A JP 23598994A JP 23598994 A JP23598994 A JP 23598994A JP H0878346 A JPH0878346 A JP H0878346A
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- mounting table
- electrode
- conductor
- plasma
- deposition
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラズマＣＶＤ（Chem
ical Vapor Deposition ）法により成膜を行うプラズマ
成膜装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a plasma CVD (Chem
The present invention relates to a plasma film forming apparatus for forming a film by the ical vapor deposition method.
【０００２】[0002]
【従来の技術】半導体ウエハ（以下ウエハという）に成
膜を行う手法の一つとしてプラズマＣＶＤ法が知られて
いる。この方法は、処理ガスに電気エネルギーを与えて
プラズマを発生させ、そのプラズマ中の粒子を被処理面
に堆積する方法であり、例えばＴＥＯＳ（テトラエチル
オルソシリケート）及び酸素ガスを処理ガスとして用
い、これをプラズマ化すると共にウエハを加熱して気相
反応により層間絶縁膜であるＳｉＯ2 膜が半導体ウエハ
（以下ウエハという）の表面に形成される。2. Description of the Related Art A plasma CVD method is known as one of methods for forming a film on a semiconductor wafer (hereinafter referred to as a wafer). This method is a method in which electric energy is applied to a processing gas to generate plasma, and particles in the plasma are deposited on a surface to be processed. For example, TEOS (tetraethyl orthosilicate) and oxygen gas are used as the processing gas. And the wafer is heated to form a SiO 2 film which is an interlayer insulating film on the surface of a semiconductor wafer (hereinafter referred to as a wafer) by a gas phase reaction.
【０００３】従来のプラズマＣＶＤ装置について図４を
参照しながら述べると、真空室１内には処理時における
加熱部２０を内蔵した載置台２が設置されると共にこの
載置台２の上方側に載置台２と対向するように対向電極
３が配設されている。前記対向電極３は、処理ガス供給
管３１から真空室１内に処理ガスを供給するガス供給部
を兼用している。一方載置台２は昇降機構２１により昇
降できるように構成されている。その理由については、
載置台２と対向電極３との距離が例えば４０ｍｍ程度と
短く、この領域ではウエハＷの受け渡しを行うことが困
難であることから、ウエハＷの受け渡し時と処理時とに
おいて載置台２の高さを変える必要があるからである。
図では載置台２はウエハの受け渡し位置にある。なお載
置台２の下部側には載置台２を囲むようにリング状のベ
ローズ体４が設けられ、昇降機構２１などを真空室１の
雰囲気から気密に隔離している。A conventional plasma CVD apparatus will be described with reference to FIG. 4. A mounting table 2 having a heating unit 20 incorporated therein during processing is installed in the vacuum chamber 1 and mounted on the upper side of the mounting table 2. A counter electrode 3 is arranged so as to face the stand 2. The counter electrode 3 also serves as a gas supply unit for supplying the processing gas from the processing gas supply pipe 31 into the vacuum chamber 1. On the other hand, the mounting table 2 is constructed so that it can be lifted and lowered by a lifting mechanism 21. For the reason,
The distance between the mounting table 2 and the counter electrode 3 is short, for example, about 40 mm, and it is difficult to transfer the wafer W in this region. Therefore, the height of the mounting table 2 is set between the transfer of the wafer W and the processing. Because it is necessary to change.
In the figure, the mounting table 2 is at the wafer transfer position. A ring-shaped bellows body 4 is provided on the lower side of the mounting table 2 so as to surround the mounting table 2, and the lifting mechanism 21 and the like are airtightly isolated from the atmosphere of the vacuum chamber 1.
【０００４】載置台２は、ウエハＷが載置される下部電
極２２を絶縁性の電極支持体２３の上に設けてなり、こ
の載置台２の側周部には、これを囲むように例えばアル
ミニウムやステンレスなどから構成される防着板５が設
けられている。この防着板５は真空室１の内壁面及び載
置台２側周面にＣＶＤ処理時の反応生成物が付着するの
を防止するものである。The mounting table 2 is provided with a lower electrode 22 on which a wafer W is mounted on an insulative electrode support 23, and a side peripheral portion of the mounting table 2 surrounds the lower electrode 22, for example. A deposition preventive plate 5 made of aluminum, stainless steel or the like is provided. The deposition preventive plate 5 prevents the reaction product during the CVD process from adhering to the inner wall surface of the vacuum chamber 1 and the peripheral surface of the mounting table 2 side.
【０００５】そしてＣＶＤ処理を行う場合には、下部電
極２２上にウエハＷを載置し、例えば、下部電極２２に
高周波電源Ｅを接続する一方対向電極３を接地して電極
２２、３間に高周波電圧を印加し、処理ガスをプラズマ
化してウエハＷ上に反応生成物を被着堆積する。このと
き防着板５は電気的にフロ−ティングの状態にすると、
防着板５に電荷が蓄積して異常放電を起こし、これによ
りプラズマ密度の均一性が悪くなることがあるため、下
部電極２２に対して固定するための固定ネジを介して下
部電極２２と同電位（カソード）としていた。When performing the CVD process, the wafer W is placed on the lower electrode 22 and, for example, the high frequency power source E is connected to the lower electrode 22 while the counter electrode 3 is grounded and the electrodes 22 and 3 are grounded. A high-frequency voltage is applied and the processing gas is turned into plasma to deposit reaction products on the wafer W by deposition. At this time, if the deposition preventive plate 5 is electrically floated,
Since charges may accumulate on the deposition-inhibiting plate 5 and abnormal discharge may occur, which may deteriorate the uniformity of plasma density, the fixing screw for fixing the same to the lower electrode 22 is used to fix the same to the lower electrode 22. The potential (cathode) was used.
【０００６】[0006]
【発明が解決しようとする課題】ところでデバイスのパ
ターンが増々微細化する傾向にあることから成膜すべき
凹部のアスペクト比が大きくなりつつあり、このため異
方性を大きくする必要がある。ここに従来の装置では防
着板５の電位を下部電極２２の電位と同じにしているた
め、電界が下部電極２２の周囲に広がって処理ガスのプ
ラズマ粒子の垂直性が悪くなり、大きな異方性が確保で
きないので微細パターンに対して良好な成膜処理を行う
ことができないという問題がある。By the way, since the pattern of the device tends to become finer and finer, the aspect ratio of the concave portion to be formed is becoming larger, and therefore it is necessary to increase the anisotropy. Here, in the conventional device, since the potential of the deposition preventive plate 5 is set to be the same as the potential of the lower electrode 22, the electric field spreads around the lower electrode 22 and the perpendicularity of the plasma particles of the processing gas deteriorates, resulting in a large anisotropy. Therefore, there is a problem that a good film forming process cannot be performed on a fine pattern because the property cannot be secured.
【０００７】本発明は、このような事情の下になされた
ものであり、その目的は、異常放電を起こすことなくし
かも大きな異方性で成膜処理を行うことのできるプラズ
マ成膜装置を提供することにある。The present invention has been made under the above circumstances, and an object thereof is to provide a plasma film forming apparatus capable of performing film forming processing with large anisotropy without causing abnormal discharge. To do.
【０００８】[0008]
【課題を解決するための手段】請求項１の発明は、真空
室内に設けられ、被処理体が載置される第１の電極を備
えた載置台と、前記第１の電極に対向する第２の電極
と、前記載置台の周囲に設けられた蒸着物シールド用の
防着板とを有し、前記第１の電極及び第２の電極間に電
圧を印加して処理ガスをプラズマ化し、そのプラズマに
より載置台上の被処理体に成膜処理を行う装置におい
て、前記防着板をバイアス電源部に接続して、防着板が
第１の電極とは異なる電位となるように構成したことを
特徴とする。According to a first aspect of the present invention, there is provided a mounting table provided in a vacuum chamber, the mounting table having a first electrode on which an object to be processed is mounted, and a mounting table facing the first electrode. 2 electrode and a deposition shield shield plate provided around the mounting table described above, a voltage is applied between the first electrode and the second electrode to turn the processing gas into plasma, In the apparatus for performing the film forming process on the object to be processed on the mounting table by the plasma, the deposition preventing plate is connected to the bias power source unit so that the deposition preventing plate has a potential different from that of the first electrode. It is characterized by
【０００９】請求項２の発明は、真空室内に設けられ、
被処理体が載置される第１の電極と加熱部とを備えた昇
降自在な載置台と、前記第１の電極に対向する第２の電
極と、前記載置台の周囲に設けられた蒸着物シールド用
の防着板と、前記載置台を昇降させる昇降機構と真空室
内雰囲気とを気密に隔離するために載置台を囲むように
かつ一縁が載置台に固定されたリング状のベロース体
と、を有し、前記第１の電極及び第２の電極間に電圧を
印加して処理ガスをプラズマ化し、載置台上の加熱され
た被処理体にプラズマにより成膜処理を行う装置におい
て、前記載置台の外側に設けられ、一端部及び他端部が
夫々載置台側及びベローズ体の固定部側に固定されると
共に載置台の昇降に追従して長さが変わる導電体を備
え、この導電体の一端部及び他端部を夫々防着板及びバ
イアス電源部に接続し、このバイアス電源部により前記
防着板が第１の電極と異なる電位となるように構成した
ことを特徴とする。The invention of claim 2 is provided in a vacuum chamber,
An elevating and lowering mounting table including a first electrode on which the object to be processed is mounted and a heating unit, a second electrode facing the first electrode, and vapor deposition provided around the mounting table. A ring-shaped bellows body that surrounds the mounting table and has one edge fixed to the mounting table in order to airtightly separate the deposition shield plate for the object shield, the elevating mechanism for moving the mounting table up and down, and the atmosphere in the vacuum chamber. And an apparatus for applying a voltage between the first electrode and the second electrode to turn the processing gas into plasma, and performing film formation processing on the heated object to be processed on the mounting table with plasma. Provided on the outside of the mounting table, one end and the other end are fixed to the mounting table side and the fixed portion side of the bellows body, respectively, and a conductor whose length changes according to the elevation of the mounting table, Connect one end and the other end of the conductor to the deposition shield and the bias power supply, respectively. It said deposition preventing plate by the bias power supply unit is characterized by being configured such that the potential different from the first electrode.
【００１０】請求項３の発明は、請求項２の発明におい
て、導電体は、載置台側に固定された第１の導電体と、
ベローズ体の固定部側に固定された第２の導電体とに分
割されると共に、載置台の昇降時にこれら導電体同士が
摺動するように構成され、前記第１の導電体及び第２の
導電体は夫々防着板及びバイアス電源部に接続されてい
ることを特徴とする。According to a third aspect of the invention, in the second aspect of the invention, the conductor is a first conductor fixed to the mounting table side.
The first conductor and the second conductor are divided into a second conductor fixed to the fixing portion side of the bellows body, and these conductors slide with each other when the mounting table is moved up and down. The conductors are respectively connected to the deposition preventive plate and the bias power source section.
【００１１】請求項４の発明は、請求項３の発明におい
て、第１の導電体または第２の導電体の一方は、弾性構
造体よりなり、その弾性力により他方の導電体に圧接さ
れていることを特徴とする。According to a fourth aspect of the invention, in the third aspect of the invention, one of the first conductor and the second conductor is made of an elastic structure, and the elastic force presses the other conductor. It is characterized by being
【００１２】[0012]
【作用】ＣＶＤ処理時において反応副生成物が生成され
るが、防着板の存在により、載置台の側周部及び真空室
の内壁面ヘの反応副生成物等の付着が防止される。そし
てこれら防着板と第１の電極の電位は異なり、例えば第
１の電極が高周波電源に接続され、防着板が例えば接地
されるため、防着板は電気的に浮遊することなく、異常
放電が防止され、また第１の電極付近の電界の横方向の
広がりが抑えられ、第１の電極へ引き寄せられるイオン
の垂直性が高くなり、異方性が大きくなる。この場合載
置台の外部において導電体を構成して防着板をバイアス
電源部（例えばア−ス）に接続すれば、載置台の熱が導
電部を通じて放熱することを抑えることができる。さら
に導電体を分割して弾性力により互いに摺動するように
構成すれば、確実な電気的接触を図ることができる。The reaction by-product is generated during the CVD process, but the presence of the deposition preventive plate prevents the reaction by-product from adhering to the side peripheral portion of the mounting table and the inner wall surface of the vacuum chamber. The potentials of the deposition preventive plate and the first electrode are different, for example, the first electrode is connected to a high frequency power source, and the deposition preventive plate is grounded, for example, so that the deposition preventive plate does not electrically float and is abnormal. Discharge is prevented, the lateral spread of the electric field near the first electrode is suppressed, the verticality of the ions attracted to the first electrode is increased, and the anisotropy is increased. In this case, if a conductor is formed outside the mounting table and the deposition preventive plate is connected to the bias power source section (for example, ground), it is possible to suppress the heat of the mounting table from radiating through the conductive section. Further, if the conductors are divided and configured to slide with each other by elastic force, reliable electrical contact can be achieved.
【００１３】[0013]
【実施例】以下本発明の実施例について説明する。図１
は本発明の一実施例に係るプラズマ成膜装置の全体構成
を示す略断面図である。図中の符号のうち、既述の図４
に示す従来のプラズマＣＶＤ装置の符号と同一の部分は
同一の構造を示している。図中１はアースに接続された
例えばアルミニウムよりなる真空室であり、この真空室
１には外側壁にロードロック室１１との間を気密にシー
ルするゲートバルブ１２が設けられると共に、下部側壁
に図示しない真空ポンプに接続された排気管１３が設け
られている。EXAMPLES Examples of the present invention will be described below. FIG.
FIG. 1 is a schematic cross-sectional view showing the overall configuration of a plasma film forming apparatus according to an embodiment of the present invention. Among the reference numerals in the figure, FIG.
The same parts as those of the conventional plasma CVD apparatus shown in FIG. In the figure, reference numeral 1 denotes a vacuum chamber made of, for example, aluminum, which is connected to the ground. The vacuum chamber 1 is provided with a gate valve 12 that hermetically seals the load lock chamber 11 from the outer wall and a lower side wall. An exhaust pipe 13 connected to a vacuum pump (not shown) is provided.
【００１４】真空室１内には、ウエハＷを載置するため
の載置台２が設置されている。この載置台２は、加熱部
２０を内蔵した例えばアルミニウム製の第１の電極をな
す下部電極２２を、例えばＡｌ2 Ｏ3 （アルミナ）から
構成される絶縁性の電極支持体２３の上に設けてなり、
下部電極２２は電極支持体２３を通して高周波電源Ｅに
接続されると共に、電極支持体２３の下部には昇降軸２
１ａを介して昇降機構２１が接続されていて、載置台２
が昇降できるように構成されている。In the vacuum chamber 1, a mounting table 2 for mounting the wafer W is installed. In this mounting table 2, a lower electrode 22 serving as a first electrode made of, for example, aluminum and having a built-in heating unit 20 is provided on an insulating electrode support 23 made of, for example, Al 2 O 3 (alumina). Tena,
The lower electrode 22 is connected to the high-frequency power source E through the electrode support 23, and the lifting shaft 2 is provided below the electrode support 23.
An elevating mechanism 21 is connected via 1a, and the mounting table 2
Is configured to be able to move up and down.
【００１５】また下部電極２２には、ウエハＷの搬送時
に載置面に対して接離するための例えば３本のプッシャ
−ピン２４が設けられており、このプッシャ−ピン２４
は電極支持体２３の中心の中空部及び昇降軸２１ａの中
を通る図示しないエアシリンダ部のエアの圧力を変える
ことにより駆動される。Further, the lower electrode 22 is provided with, for example, three pusher pins 24 that come into contact with and separate from the mounting surface when the wafer W is transferred, and the pusher pins 24 are provided.
Is driven by changing the pressure of air in an air cylinder portion (not shown) passing through the hollow portion at the center of the electrode support 23 and the elevating shaft 21a.
【００１６】電極支持体２３の下部側には、電極支持体
２３を囲むようにリング状の金属製ベローズ体４が設け
られ、一端側（上端側）のフランジ部４１は電極支持体
２３の段部に固定される一方他端側は真空室１の内壁部
に固定されている。また電極支持体２３の側周部には、
蒸着物シールド用の、つまりＣＶＤ処理時の反応副生成
物などをここでシールドして載置台２に付着しないよう
にするための例えばアルミニウムやステンレス等よりな
る防着板５が設けられている。A ring-shaped metal bellows body 4 is provided on the lower side of the electrode support body 23 so as to surround the electrode support body 23, and a flange portion 41 on one end side (upper side) is a step of the electrode support body 23. The other end side is fixed to the inner wall of the vacuum chamber 1. Further, on the side peripheral portion of the electrode support 23,
A deposition-preventing plate 5 made of, for example, aluminum or stainless steel is provided for shielding the deposit, that is, for shielding reaction by-products and the like at the time of the CVD process and preventing them from adhering to the mounting table 2.
【００１７】この防着板５は電極支持体２３に固定さ
れ、載置台２を囲むように鉛直に配設された筒状部５１
と、載置台２と真空室１の内壁部との間に下部電極２２
を囲むように、筒状部５１の上端部に設けられた水平な
リング状部５２とから構成される。筒状部５１の内周面
は、後述のように所定の電位にするため確実な電気的接
触が確保できるようにフランジ部４１の外周部に固定さ
れている。The deposition-inhibiting plate 5 is fixed to the electrode support 23 and is vertically arranged so as to surround the mounting table 2.
And the lower electrode 22 between the mounting table 2 and the inner wall of the vacuum chamber 1.
And a horizontal ring-shaped portion 52 provided at the upper end of the tubular portion 51 so as to surround the. The inner peripheral surface of the tubular portion 51 is fixed to the outer peripheral portion of the flange portion 41 so as to secure a reliable electrical contact because the inner peripheral surface has a predetermined potential as described later.
【００１８】前記ベローズ体４の内方側には、第１の導
電体６１をなす、例えば厚さ３．０ｍｍ、幅１０ｍｍの
板状体が鉛直方向に沿って設けられており、その一端部
（上端部）はＬ字状に屈曲されてフランジ部４１の下面
に接合して固定されると共に、下端部がベローズ体４の
下端部よりも更に下方側の位置まで伸びている。一方ベ
ローズ体４の下方側のフランジ部４２が固定されている
真空室１の内壁部には、板状体を屈曲させて、屈曲方向
に力が加わって曲げられたときに、その力の方向と反対
方向に弾性力を生じるように構成された、第２の導電体
６２をなす弾性構造体がフランジ部４２に接合して固定
されている。On the inner side of the bellows body 4, a plate-like body having a thickness of 3.0 mm and a width of 10 mm, for example, which is a first conductor 61, is provided along the vertical direction, and one end thereof is provided. The (upper end portion) is bent into an L shape and is joined and fixed to the lower surface of the flange portion 41, and the lower end portion extends to a position further below the lower end portion of the bellows body 4. On the other hand, when the plate-like body is bent on the inner wall portion of the vacuum chamber 1 to which the lower flange portion 42 of the bellows body 4 is fixed and the force is applied in the bending direction to bend, the direction of the force An elastic structure forming the second electric conductor 62, which is configured to generate an elastic force in the opposite direction, is joined and fixed to the flange portion 42.
【００１９】この弾性構造体は屈曲部分の外周面が、外
方側（図１中右側）に復元力が作用する状態で前記第１
の導電体６１に圧接されており、載置台２が昇降したと
きに、その復元力により第１の導電体６１に圧接した状
態で相対的に摺動するようになっている。第１の導電体
６１及び第２の導電体６２は例えばアルミニウムやステ
ンレス等により構成されており、防着板５はベローズ体
４の上部フランジ部４１、第１の導電体６１、第２の導
電体６２、ベローズ体４の下部フランジ部４２、真空室
１を介して、バイアス電源部例えばアースに電気的に接
続されている。なお防着板５はベローズ体４を介してア
ースに接続してもよいが、通常ベローズ体４は薄い材料
で構成されているため、確実な電気的接触を確保するた
めには本実施例の構成が好ましい。In this elastic structure, the outer peripheral surface of the bent portion is in a state where the restoring force acts on the outer side (the right side in FIG. 1).
When the mounting table 2 moves up and down, the resting table 2 relatively slides while being pressed against the first conductor 61. The first conductor 61 and the second conductor 62 are made of, for example, aluminum or stainless steel, and the attachment-preventing plate 5 has the upper flange portion 41 of the bellows body 4, the first conductor 61, and the second conductor. The body 62, the lower flange portion 42 of the bellows body 4, and the vacuum chamber 1 are electrically connected to a bias power supply unit such as ground. Although the deposition preventive plate 5 may be connected to the ground via the bellows body 4, since the bellows body 4 is usually made of a thin material, in order to secure a reliable electrical contact, the present embodiment does not. The configuration is preferred.
【００２０】そして真空室１内の載置台２の上方側に
は、載置台２と対向するように第２の電極をなし、多数
のガス噴射口を備えたガス拡散板よりなる対向電極３が
配設されている。この対向電極３は真空室１内に処理ガ
スを供給するガス供給部を兼用するものであり、頂部に
は処理ガス供給管３１が接続されている。On the upper side of the mounting table 2 in the vacuum chamber 1, a second electrode is formed so as to face the mounting table 2, and a counter electrode 3 composed of a gas diffusion plate having a large number of gas injection ports is provided. It is arranged. The counter electrode 3 also serves as a gas supply unit for supplying a processing gas into the vacuum chamber 1, and a processing gas supply pipe 31 is connected to the top thereof.
【００２１】次に上述実施例の作用について述べる。先
ず被処理体である半導体ウエハＷを、ロードロック室１
１から図示しない搬送アームによりゲートバルブ１２を
介して、真空室１内に搬入し、下部電極２２のウエハ載
置面上にプッシャ−ピン２４を介して載置した後、昇降
機構２１により載置台２を所定の位置例えば載置台２と
対向電極３との距離が例えば４０ｍｍの位置まで上昇さ
せる。そして処理ガス供給管３１より、対向電極３を介
して真空室１内に例えばＴＥＯＳ及び酸素ガスからなる
処理ガスを供給すると共に、排気管１３を介して真空ポ
ンプにより排気し、真空室１内を所定の真空度に維持し
ながら、更に載置台２と対向電極３との間に、高周波電
源Ｅにより、例えば１３．５６ＭＨｚ、１０００Ｗの高
周波電圧を印加して電極２、３間にプラズマを発生さ
せ、ウエハＷの表面にＳｉＯ2 膜（シリコン酸化膜）を
成膜する。成膜処理後、昇降機構２１より載置台２を、
図１に示すウエハＷの受け渡し位置まで下降させる。こ
の後昇降軸２１ａ内のエアの圧力を調整してプッシャ−
ピン２４を駆動し、このプッシャ−ピン２４によりウエ
ハＷを押し上げて、図示しない搬送アームにより真空室
１から搬出する。Next, the operation of the above embodiment will be described. First, the semiconductor wafer W, which is an object to be processed, is placed in the load lock chamber 1
1 is loaded into the vacuum chamber 1 via the gate valve 12 by a transfer arm (not shown), and is placed on the wafer placement surface of the lower electrode 22 via the pusher pin 24, and then is raised by the lifting mechanism 21. 2 is raised to a predetermined position, for example, a position where the distance between the mounting table 2 and the counter electrode 3 is, for example, 40 mm. Then, while supplying a processing gas composed of, for example, TEOS and oxygen gas into the vacuum chamber 1 from the processing gas supply pipe 31 via the counter electrode 3, the processing chamber is evacuated by a vacuum pump via the exhaust pipe 13 so that the inside of the vacuum chamber 1 is While maintaining a predetermined degree of vacuum, a high frequency voltage of, for example, 13.56 MHz and 1000 W is applied by a high frequency power supply E between the mounting table 2 and the counter electrode 3 to generate plasma between the electrodes 2 and 3. A SiO 2 film (silicon oxide film) is formed on the surface of the wafer W. After the film formation process, the mounting table 2 is lifted by the lifting mechanism 21.
The wafer W is lowered to the delivery position shown in FIG. After this, the pressure of the air in the lifting shaft 21a is adjusted and the pusher
The pin 24 is driven, the pusher pin 24 pushes up the wafer W, and the wafer W is unloaded from the vacuum chamber 1 by a transfer arm (not shown).
【００２２】ここで載置台２の昇降時には、第１の導電
体６１は復元力により第２の導電体６２と圧接しながら
載置台２と共に昇降する。このため導電体６１、６２同
士は常に確実に電気的に接続されており、しかもこの導
電路の断面積を大きくとることができるので、防着板５
はフランジ部４１、第１の導電体６１、第２の導電体６
２及び真空室１を介して確実にアース電位に維持され
る。なお載置台２の昇降時ベローズ体４は伸縮し、昇降
機構２１、導電体６１、６２等は真空室１の雰囲気から
気密に隔離される。Here, when the mounting table 2 is moved up and down, the first conductor 61 moves up and down together with the mounting table 2 while being in pressure contact with the second conductor 62 due to the restoring force. Therefore, the conductors 61 and 62 are always reliably electrically connected to each other, and moreover, the cross-sectional area of this conductive path can be made large, so that the adhesion-preventing plate 5
Is the flange portion 41, the first conductor 61, the second conductor 6
2 and the vacuum chamber 1 are reliably maintained at the ground potential. The bellows body 4 expands and contracts when the mounting table 2 is moved up and down, and the lifting mechanism 21, the conductors 61 and 62, etc. are airtightly isolated from the atmosphere of the vacuum chamber 1.
【００２３】上述の成膜処理の際、ＳｉＯ2 と共にカー
ボンＣを中心とした種々の重合物などの反応中間生成物
も生成されるが、この反応副生成物は防着板５の筒状体
５１及びリング状体５２に付着する。従って載置台２の
側周部や真空室１の内壁部への反応副生成物の付着は防
止される。また防着板５はアースに接続されており、電
気的にフローティングの状態ではないため異常放電が防
止される上、下部電極２２は高周波電源Ｅに接続されて
おり、下部電極２２と防着板５との電位が異なるため、
電界の横方向の広がりが抑えられる。従って処理ガスの
プラズマ粒子の垂直性が高くなり、大きな異方性が確保
できるので、微細パターンに対しても良好な成膜処理を
行うことができる。また導電体６１、６２は載置台２の
外部に配設されているため、加熱部２０の熱が電極支持
体２３及び導電体６１、６２を通じて放熱されることを
抑えることができる。During the above-mentioned film forming process, reaction intermediate products such as various polymers centering on carbon C are produced together with SiO 2 , but these reaction by-products are the cylindrical body of the deposition-inhibitory plate 5. 51 and the ring-shaped body 52. Therefore, the reaction by-products are prevented from adhering to the side peripheral portion of the mounting table 2 and the inner wall portion of the vacuum chamber 1. Further, since the deposition preventive plate 5 is connected to the ground and is not in an electrically floating state, abnormal discharge is prevented, and the lower electrode 22 is connected to the high frequency power source E, so that the lower electrode 22 and the deposition preventive plate are connected. Because the potential is different from 5,
The lateral spread of the electric field is suppressed. Therefore, the perpendicularity of the plasma particles of the processing gas is increased, and a large anisotropy can be secured, so that a good film formation process can be performed even on a fine pattern. Further, since the conductors 61 and 62 are arranged outside the mounting table 2, it is possible to suppress the heat of the heating unit 20 from being radiated through the electrode support 23 and the conductors 61 and 62.
【００２４】以上において第１の導電体６１及び第２の
導電体６２は例えば図３に示すようにベローズ体４の外
方側に設けてもよいし、上側に第１の導電体６１をなす
弾性構造体を設け、下側に第２の導電体６２をなす板状
体を設けるようにしてもよい。また導電体６１、６２は
アースに限らず、直流源よりなるバイアス電源部６０に
接続して所定の電位（下部電極２２とは異なる電位）と
してもよい。さらに導電体として、載置台２の前記段部
とベロ−ズ体４の固定部側との間で伸縮するバネを設け
てもよいし、導電体は載置台２の内部に設けてもよい。
そしてまた載置台側の第１の電極を接地し、対向電極で
ある第２の電極を高周波電源に接続する場合にも適用で
きる。In the above, the first conductor 61 and the second conductor 62 may be provided on the outer side of the bellows body 4 as shown in FIG. 3, or the first conductor 61 may be formed on the upper side. An elastic structure may be provided, and a plate-like body forming the second conductor 62 may be provided on the lower side. Further, the conductors 61 and 62 are not limited to ground, but may be connected to the bias power source unit 60 composed of a DC source to have a predetermined potential (potential different from that of the lower electrode 22). Further, as the conductor, a spring that expands and contracts between the stepped portion of the mounting table 2 and the fixed portion side of the bellows body 4 may be provided, or the conductor may be provided inside the mounting table 2.
Further, it is also applicable to the case where the first electrode on the mounting table side is grounded and the second electrode which is the counter electrode is connected to the high frequency power source.
【００２５】[0025]
【発明の効果】本発明によれば、防着板を電気的に浮遊
させることなく、バイアス電源部に接続して第１の電極
とは異なる電位に設定しているので異常放電が防止され
しかも第１の電極付近の電界の横方向の広がりが抑えら
れ、第１の電極へ引き寄せられるイオンの垂直性が高く
なり、異方性が大きくなる。また載置台の外部において
導電体を構成して防着板をバイアス電源部に接続してい
るので、載置台の熱が導電体を通じて放熱することを抑
えることができる。さらに導電体を分割して弾性力によ
り互いに摺動するように構成すれば、確実な電気的接触
を図ることができる。According to the present invention, since the deposition preventive plate is connected to the bias power source and set to a potential different from that of the first electrode without electrically floating, abnormal discharge can be prevented. The lateral spread of the electric field near the first electrode is suppressed, the perpendicularity of the ions attracted to the first electrode is increased, and the anisotropy is increased. Further, since the conductor is formed outside the mounting table and the deposition-prevention plate is connected to the bias power supply unit, it is possible to suppress the heat of the mounting table from radiating through the conductor. Further, if the conductors are divided and configured to slide with each other by elastic force, reliable electrical contact can be achieved.
【図１】本発明のプラズマ成膜装置の一例を示す断面図
である。FIG. 1 is a sectional view showing an example of a plasma film forming apparatus of the present invention.
【図２】本発明の導電体、ベローズ体、載置台を示す斜
視図である。FIG. 2 is a perspective view showing a conductor, a bellows body, and a mounting table of the present invention.
【図３】本発明の導電体の他の例を示す断面図である。FIG. 3 is a cross-sectional view showing another example of the conductor of the present invention.
【図４】従来のプラズマ成膜装置の断面図である。FIG. 4 is a sectional view of a conventional plasma film forming apparatus.
１ 真空室 ２ 載置台 ２１ 昇降機構 ２２ 下部電極 ２３ 電極支持体 ３ 対向電極 ４ ベローズ体 ５ 防着板 ５１ 筒状体 ５２ リング状体 ６１ 第１の導電体 ６２ 第２の導電体 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Mounting table 21 Elevating mechanism 22 Lower electrode 23 Electrode support 3 Counter electrode 4 Bellows body 5 Attachment plate 51 Cylindrical body 52 Ring-shaped body 61 First conductor 62 Second conductor
Claims (4)
れる第１の電極を備えた載置台と、前記第１の電極に対
向する第２の電極と、前記載置台の周囲に設けられた蒸
着物シールド用の防着板とを有し、前記第１の電極及び
第２の電極間に電圧を印加して処理ガスをプラズマ化
し、そのプラズマにより載置台上の被処理体に成膜処理
を行う装置において、 前記防着板をバイアス電源部に接続して、防着板が第１
の電極とは異なる電位となるように構成したことを特徴
とするプラズマ成膜装置。1. A mounting table provided in a vacuum chamber, the mounting table having a first electrode on which an object to be processed is mounted; a second electrode facing the first electrode; and a mounting table surrounding the mounting table. And a deposition-shielding plate provided for shielding the deposited material, applying a voltage between the first electrode and the second electrode to turn the processing gas into plasma, and the plasma causes the processing target to be placed on the mounting table. In an apparatus for performing a film forming process, the deposition preventive plate is connected to a bias power source unit,
The plasma film forming apparatus is configured to have a potential different from that of the electrode.
れる第１の電極と加熱部とを備えた昇降自在な載置台
と、前記第１の電極に対向する第２の電極と、前記載置
台の周囲に設けられた蒸着物シールド用の防着板と、前
記載置台を昇降させる昇降機構と真空室内雰囲気とを気
密に隔離するために載置台を囲むようにかつ一縁が載置
台に固定されたリング状のベロース体と、を有し、 前記第１の電極及び第２の電極間に電圧を印加して処理
ガスをプラズマ化し、載置台上の加熱された被処理体に
プラズマにより成膜処理を行う装置において、前記載置
台の外側に設けられ、一端部及び他端部が夫々載置台側
及びベローズ体の固定部側に固定されると共に載置台の
昇降に追従して長さが変わる導電体を備え、この導電体
の一端部及び他端部を夫々防着板及びバイアス電源部に
接続し、このバイアス電源部により前記防着板が第１の
電極と異なる電位となるように構成したことを特徴とす
るプラズマ成膜装置。2. A vertically movable mounting table, which is provided in a vacuum chamber and has a first electrode on which an object to be processed is mounted, and a heating section, and a second electrode facing the first electrode. The deposition shield for the deposition shield provided around the mounting table, and an edge to surround the mounting table to hermetically separate the vacuum chamber atmosphere and the elevating mechanism for moving the mounting table up and down. A ring-shaped bellows body fixed to a mounting table, and a voltage is applied between the first electrode and the second electrode to turn the processing gas into plasma, and the heated object to be processed on the mounting table. In the apparatus for performing the film forming process by plasma, the device is provided outside the mounting table, and one end and the other end are fixed to the mounting table side and the fixing portion side of the bellows body, respectively, and follow the elevation of the mounting table. A conductor whose length is changed, and one end and the other end of this conductor are supported. Connect to preventing plate and the bias power supply unit, a plasma film forming apparatus, wherein said deposition preventing plate is configured such that the potential different from the first electrode by the bias power supply unit.
導電体と、ベローズ体の固定部側に固定された第２の導
電体とに分割されると共に、載置台の昇降時にこれら導
電体同士が摺動するように構成され、 前記第１の導電体及び第２の導電体は夫々防着板及びバ
イアス電源部に接続されていることを特徴とする請求項
２記載のプラズマ成膜装置。3. The conductor is divided into a first conductor fixed to the mounting table side and a second conductor fixed to the fixing portion side of the bellows body, and when the mounting table is moved up and down. The plasma according to claim 2, wherein the conductors are configured to slide with each other, and the first conductor and the second conductor are connected to a deposition preventive plate and a bias power supply unit, respectively. Deposition apparatus.
は、弾性構造体よりなり、その弾性力により他方の導電
体に圧接されていることを特徴とする請求項３記載のプ
ラズマ成膜装置。4. The plasma according to claim 3, wherein one of the first conductor and the second conductor is made of an elastic structure and is pressed against the other conductor by its elastic force. Deposition apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06235989A JP3131865B2 (en) | 1994-09-05 | 1994-09-05 | Plasma film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06235989A JP3131865B2 (en) | 1994-09-05 | 1994-09-05 | Plasma film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0878346A true JPH0878346A (en) | 1996-03-22 |
| JP3131865B2 JP3131865B2 (en) | 2001-02-05 |
Family
ID=16994168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06235989A Expired - Fee Related JP3131865B2 (en) | 1994-09-05 | 1994-09-05 | Plasma film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3131865B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011037107A1 (en) * | 2009-09-24 | 2011-03-31 | 東京エレクトロン株式会社 | Placing table structure and plasma film forming apparatus |
| CN103367089A (en) * | 2012-03-30 | 2013-10-23 | 中微半导体设备(上海)有限公司 | Plasma processing device with double shell |
| CN114078680A (en) * | 2020-08-20 | 2022-02-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
-
1994
- 1994-09-05 JP JP06235989A patent/JP3131865B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011037107A1 (en) * | 2009-09-24 | 2011-03-31 | 東京エレクトロン株式会社 | Placing table structure and plasma film forming apparatus |
| JP2011068918A (en) * | 2009-09-24 | 2011-04-07 | Tokyo Electron Ltd | Structure of mounting table, and plasma film-forming apparatus |
| KR101347596B1 (en) * | 2009-09-24 | 2014-01-03 | 도쿄엘렉트론가부시키가이샤 | Placing table structure and plasma film forming apparatus |
| US9324600B2 (en) | 2009-09-24 | 2016-04-26 | Tokyo Electron Limited | Mounting table structure and plasma film forming apparatus |
| CN103367089A (en) * | 2012-03-30 | 2013-10-23 | 中微半导体设备(上海)有限公司 | Plasma processing device with double shell |
| CN103367089B (en) * | 2012-03-30 | 2016-04-06 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus with double casing |
| CN114078680A (en) * | 2020-08-20 | 2022-02-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN114078680B (en) * | 2020-08-20 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3131865B2 (en) | 2001-02-05 |
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