JPH0849080A - Gas cleaning method in plasma cvd device - Google Patents
Gas cleaning method in plasma cvd deviceInfo
- Publication number
- JPH0849080A JPH0849080A JP20603594A JP20603594A JPH0849080A JP H0849080 A JPH0849080 A JP H0849080A JP 20603594 A JP20603594 A JP 20603594A JP 20603594 A JP20603594 A JP 20603594A JP H0849080 A JPH0849080 A JP H0849080A
- Authority
- JP
- Japan
- Prior art keywords
- gas cleaning
- gas
- cleaning
- processing chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はプラズマＣＶＤ装置に於
けるクリーニング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for a plasma CVD apparatus.
【０００２】[0002]
【従来の技術】半導体製造工程の１つに基板上に所定の
成膜を行うプラズマＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐ
ｏｒ Ｄｅｐｏｓｉｔｉｏｎ）成膜工程がある。該工程
は対峙する一対の電極が設けられた気密な処理室に基板
を装填し、該処理室内に反応ガスを供給しつつ前記電極
に高周波電力を印加してプラズマを発生させ、気相のガ
ス分子をプラズマにより分離させ、基板表面に薄膜を生
成するものである。2. Description of the Related Art Plasma CVD (Chemical Vap) for forming a predetermined film on a substrate in one of semiconductor manufacturing processes.
or Deposition) film forming step. In this step, a substrate is loaded in an airtight processing chamber provided with a pair of electrodes facing each other, high frequency power is applied to the electrodes while supplying a reaction gas into the processing chamber to generate plasma, and gas in a gas phase is generated. The molecules are separated by plasma to form a thin film on the substrate surface.
【０００３】ところが、このＣＶＤ成膜処理では基板上
だけでなく、電極表面や処理室内壁にも成膜される。こ
の為、成膜工程を繰返し行うと、電極表面や処理室内壁
に付着・堆積した膜はやがて剥離し、パーティクルとな
って処理中の基板上に付着して基板を汚染してしまう。
斯かる汚染は、膜機能を著しく低下させ、歩留りの低下
の原因となり生産性の低下を招く為、是非とも排除され
なければならない。従って、従来より処理室を分解し処
理室内を定期的に清掃して、この汚染を排除していた。However, in this CVD film forming process, not only the substrate, but also the electrode surface and the inner wall of the processing chamber are formed. Therefore, when the film forming process is repeated, the film adhered / deposited on the surface of the electrode or the inner wall of the processing chamber is eventually peeled off, and becomes a particle to adhere to the substrate being processed to contaminate the substrate.
Such contamination significantly reduces the membrane function, causes a reduction in yield, and causes a reduction in productivity, and thus must be eliminated by all means. Therefore, conventionally, the processing chamber is disassembled and the processing chamber is regularly cleaned to eliminate this contamination.
【０００４】然し、処理室の清掃は処理室の構成部品を
交換する等して時間短縮が図られているが、相当の時間
を要している。更に、処理室の温度降下、処理室の大気
開放等の事前工程、或は、清掃後の処理室の真空排気や
温度上昇及び圧力、温度の安定化等の事後工程が付随
し、装置の稼働率を低下させていた。However, the cleaning of the processing chamber is shortened by replacing the components of the processing chamber, but it takes a considerable amount of time. In addition, pre-processes such as temperature drop in the process chamber and opening to the atmosphere in the process chamber, or post-processes such as vacuum evacuation of the process chamber after cleaning, temperature rise and pressure, and temperature stabilization are accompanied, and the operation of the equipment is performed. The rate was decreasing.
【０００５】近年、処理室清掃の他の方法として成膜と
同様にプラズマによる処理室内を清掃するガスクリーニ
ング方法が注目を集めている。これは、成膜と同様に、
ＮＦ3 等のクリーニングガスを処理室内に供給しなが
ら、電極に高周波電力を印加してプラズマを発生させ、
気相のクリーニングガス分子をプラズマにより分離し
て、電極表面や処理室内壁に付着・堆積した膜をエッチ
ングして除去するものである。In recent years, as another method of cleaning the processing chamber, a gas cleaning method of cleaning the inside of the processing chamber with plasma has attracted attention as in the case of film formation. This is similar to film formation,
While supplying a cleaning gas such as NF 3 into the processing chamber, high frequency power is applied to the electrodes to generate plasma,
The gas phase cleaning gas molecules are separated by plasma, and the film adhered / deposited on the electrode surface or the inner wall of the processing chamber is removed by etching.
【０００６】[0006]
【発明が解決しようとする課題】上記したガスクリーニ
ング方法は、処理室を分解して清掃を行う従来からの清
掃作業に比較して、処理室の温度降下や大気開放或は真
空排気や温度上昇といった付随工程を省略することがで
きる為、稼働率向上に非常に有効である。然し、該ガス
クリーニング方法では電極や処理室内壁に付着・堆積し
た膜をエッチングクリーニングする際に、エッチングさ
れた膜の再付着や、電極の周辺や処理室内壁のコーナ部
のクリーニング度が低い等のエッチング分布の不均一を
伴いクリーニング時間の長時間化が問題となっていた。SUMMARY OF THE INVENTION The above-described gas cleaning method has a lower temperature in the processing chamber, opening to the atmosphere, evacuation, or an increase in temperature than the conventional cleaning work in which the processing chamber is disassembled for cleaning. It is very effective for improving the operating rate because it is possible to omit the accompanying process. However, in the gas cleaning method, when etching and cleaning the film adhered / deposited on the electrode or the inner wall of the processing chamber, the re-adhesion of the etched film, the degree of cleaning around the electrode or the corner of the inner wall of the processing chamber is low, etc. There is a problem in that the cleaning time is prolonged due to the non-uniform etching distribution.
【０００７】本発明は斯かる実情に鑑み、ガスクリーニ
ング方法に於いてエッチングされた膜の再付着の抑制、
エッチング分布の不均一の改善を図るものである。In view of the above situation, the present invention suppresses redeposition of an etched film in a gas cleaning method,
It is intended to improve the non-uniformity of etching distribution.
【０００８】[0008]
【課題を解決するための手段】本発明は、エッチングガ
スを導入し高周波電力を供給してプラズマを発生させ、
プラズマエッチングによりガスクリーニングを行うガス
クリーニング方法に於いて、ガスクリーニング時の圧力
を変動させることをことを特徴とするものである。According to the present invention, an etching gas is introduced and high-frequency power is supplied to generate plasma.
In a gas cleaning method in which gas cleaning is performed by plasma etching, the pressure at the time of gas cleaning is changed.
【０００９】[0009]
【作用】ガスクリーニング時の圧力を変動させること
で、膜の再付着の抑制、エッチング分布の不均一が改善
され、ガスクリーニング時間の短縮が図れる。By varying the pressure at the time of gas cleaning, re-deposition of the film can be suppressed, nonuniform etching distribution can be improved, and the gas cleaning time can be shortened.
【００１０】[0010]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１１】図１に於いて本発明が実施されるプラズマ
ＣＶＤ装置について説明する。A plasma CVD apparatus in which the present invention is implemented will be described with reference to FIG.
【００１２】処理室１の天井面に電極ホルダ２が設けら
れ、該電極ホルダ２の内部に絶縁体３を介して上電極
（カソード）４が設けられる。該上電極４にはカソード
ヒータ１６が埋設され、又上電極４の下面にはシャワー
プレート５が設けられ、前記上電極４とシャワープレー
ト５間には間隙６が形成される。該間隙６には前記処理
室１とは絶縁された反応ガス導入管１３が連通されてい
る。前記シャワープレート５には多数のガス分散孔７が
穿設され、前記反応ガス導入管１３より導入された反応
ガスを前記ガス分散孔７より後述するプラズマ処理空間
１４に供給する様になっている。An electrode holder 2 is provided on the ceiling surface of the processing chamber 1, and an upper electrode (cathode) 4 is provided inside the electrode holder 2 via an insulator 3. A cathode heater 16 is embedded in the upper electrode 4, a shower plate 5 is provided on the lower surface of the upper electrode 4, and a gap 6 is formed between the upper electrode 4 and the shower plate 5. A reaction gas introduction pipe 13 insulated from the processing chamber 1 is communicated with the gap 6. A large number of gas dispersion holes 7 are formed in the shower plate 5, and the reaction gas introduced from the reaction gas introduction pipe 13 is supplied to the plasma processing space 14 described later from the gas dispersion holes 7. .
【００１３】前記電極ホルダ２の下端に内室外壁８が連
設され、該内室外壁８の内側に内室内壁９が設けられ、
前記内室外壁８、内室内壁９の下端に下電極（アノー
ド）１０が設けられ、該下電極１０にはアノードヒータ
１７が埋設されている。前記下電極１０には基板載置台
１１を介して基板１２が装填され、前記プラズマ処理空
間１４には排気管１５が連通されている。尚、図中、１
８，１９は基板搬入搬出用の開口部を示す。An inner chamber outer wall 8 is connected to the lower end of the electrode holder 2, and an inner chamber inner wall 9 is provided inside the inner chamber outer wall 8.
A lower electrode (anode) 10 is provided at the lower ends of the inner and outer walls 8 and 9 and an anode heater 17 is embedded in the lower electrode 10. A substrate 12 is loaded on the lower electrode 10 via a substrate mounting table 11, and an exhaust pipe 15 is connected to the plasma processing space 14. In the figure, 1
Reference numerals 8 and 19 denote openings for loading and unloading the substrate.
【００１４】前記シャワープレート５、内室内壁９、下
電極１０により囲繞される空間でプラズマ処理空間１４
が形成され、前記反応ガス導入管１３よりシャワープレ
ート５を介して前記プラズマ処理空間１４に反応ガスを
供給しつつ前記上電極４、下電極１０間に高周波電源２
０により高周波電力を印加することでシャワープレート
５下方にプラズマを発生させ、前記基板１２を処理す
る。The plasma processing space 14 is a space surrounded by the shower plate 5, the inner chamber wall 9 and the lower electrode 10.
And a high frequency power source 2 between the upper electrode 4 and the lower electrode 10 while supplying a reaction gas from the reaction gas introducing pipe 13 to the plasma processing space 14 via the shower plate 5.
High frequency power is applied to generate plasma under the shower plate 5 to process the substrate 12.
【００１５】基板１２に所要の薄膜を生成する場合は、
前記反応ガス導入管１３より反応ガスとしてＳｉＨ4 、
Ｓｉ2 Ｈ6 、ＳｉＨ2 ｃｌ2 、ＮＨ3 、ＰＨ3 等を導入
して行う。When the required thin film is formed on the substrate 12,
SiH 4 as a reaction gas from the reaction gas introducing pipe 13,
Performed by introducing Si 2 H 6, SiH 2 cl 2, NH 3, PH 3 or the like.
【００１６】又、所定時間経過した場合ガスクリーニン
グを実施する。ガスクリーニングする場合は反応ガスと
してＮＦ3 、ＣＦ4 、ＳＦ6 等を導入してガスクリーニ
ングする。クリーニングする際のプラズマ処理空間１４
の圧力を所定のサイクルで変動させる。When a predetermined time has passed, gas cleaning is carried out. When performing gas cleaning, NF 3 , CF 4 , SF 6 or the like is introduced as a reaction gas for gas cleaning. Plasma processing space 14 for cleaning
Vary the pressure in a given cycle.
【００１７】次に、本発明の具体例を説明する。Next, a specific example of the present invention will be described.
【００１８】クリーニング効果の確認の為、基板載置台
１１にガラス基板１２を装填してプラズマ処理空間１４
に反応ガスを供給し成膜速度１４００オングストローム
/min（Ａ/min）、エッチング速度４００オングストロー
ム/minの条件でＳｉＮ膜を４００００オングストローム
成膜した。次いで処理室１内に供給する反応ガスをＮＦ
3 に変更し、高周波電力密度を０．８Ｗ /cm2 として５
分間ガスクリーニングを行った。尚、クリーニング時の
圧力の変化を０．８〜０．２Torrとし変化の周期を２０
秒サイクルとした。In order to confirm the cleaning effect, the glass substrate 12 is loaded on the substrate mounting table 11 and the plasma processing space 14 is provided.
Reaction gas is supplied to the film to form a film at a rate of 1400 Å
/ min (A / min) and an etching rate of 400 angstrom / min, a SiN film was formed at 40,000 angstrom. Then, the reaction gas supplied into the processing chamber 1 is NF
Change to 3 and set high frequency power density to 0.8W / cm 2 and 5
Gas cleaning was performed for a minute. The change in pressure during cleaning is 0.8 to 0.2 Torr and the change cycle is 20
Seconds cycle.
【００１９】又、本発明に係る具体例と従来方法でガス
クリーニングした比較例を説明する。A specific example according to the present invention and a comparative example in which gas cleaning is performed by a conventional method will be described.
【００２０】比較例に於いてガスクリーニング時の圧力
を０．４Torrと固定した外は、本発明の具体例と同様に
してガスクリーニングを行った。Gas cleaning was performed in the same manner as in the specific example of the present invention except that the pressure during gas cleaning was fixed at 0.4 Torr in the comparative example.
【００２１】それぞれのガスクリーニングの効果を下記
するガスクリーニング前後のパーティクル測定及びエッ
チング速度測定及び電極、処理室内壁の目視により評価
した。評価の結果は表１に示す。The effect of each gas cleaning was evaluated by the following particle measurement before and after gas cleaning, etching rate measurement, and visual observation of the electrodes and the inner wall of the processing chamber. The evaluation results are shown in Table 1.
【００２２】パーティクル測定 ガラス基板上に４インチウェーハを２枚載置し、ガスク
リーニング前後に於いての処理室を空搬送させた時の
０．３μm 以上のパーティクル増加密度をパーティクル
カウンタにより測定した。Particle Measurement Two 4-inch wafers were placed on a glass substrate, and particle increase densities of 0.3 μm or more were measured by a particle counter when the processing chamber was idly transported before and after gas cleaning.
【００２３】エッチング速度及び分布測定 処理室内に装填したＳｉＮ膜付基板について、ガスクリ
ーニング３分経過後の残存膜厚からエッチング速度を測
定した。又、エッチング速度分布は中央と周辺４点を測
定し、（max. -min.）／（max. +min.）×１００により
±％として算出した。Measurement of Etching Rate and Distribution The etching rate of the SiN film-coated substrate loaded in the processing chamber was measured from the remaining film thickness after 3 minutes of gas cleaning. The etching rate distribution was calculated as ±% by measuring (max.-min.) / (Max. + Min.) × 100 by measuring four points at the center and the periphery.
【００２４】処理室に残留した膜の目視評価 電極や処理室内壁に残留した膜を目視により評価した。Visual Evaluation of Film Remaining in Processing Chamber The film remaining on the electrodes and the inner wall of the processing chamber was visually evaluated.
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【発明の効果】以上述べた如く本発明によれば、ガスク
リーニング時の圧力を変動させてガスクリーニングを行
うことにより、クリーニングでエッチングされた膜の再
付着を防止し、エッチング分布の不均一化を抑制してク
リーニング時間を短縮することができる。As described above, according to the present invention, the pressure during gas cleaning is changed to carry out gas cleaning, thereby preventing re-deposition of a film etched by cleaning and making the etching distribution non-uniform. The cleaning time can be shortened by suppressing this.
【図１】本発明が実施されるＣＶＤ装置の一例を示す断
面図である。FIG. 1 is a sectional view showing an example of a CVD apparatus in which the present invention is implemented.
１ 処理室 ４ 上電極 １０ 下電極 １２ 基板 １４ プラズマ処理空間 １５ 排気管 ２０ 高周波電源 1 Processing Chamber 4 Upper Electrode 10 Lower Electrode 12 Substrate 14 Plasma Processing Space 15 Exhaust Pipe 20 High Frequency Power Supply
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/304 ３４１ Ｄ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 21/304 341 D
Claims (1)
給してプラズマを発生させ、プラズマエッチングにより
ガスクリーニングを行うガスクリーニング方法に於い
て、ガスクリーニング時の圧力を変動させることを特徴
とするプラズマＣＶＤ装置に於けるガスクリーニング方
法。1. In a gas cleaning method, wherein an etching gas is introduced, high-frequency power is supplied to generate plasma, and gas cleaning is performed by plasma etching, the pressure during gas cleaning is varied, and plasma CVD is characterized. Gas cleaning method in equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20603594A JPH0849080A (en) | 1994-08-08 | 1994-08-08 | Gas cleaning method in plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20603594A JPH0849080A (en) | 1994-08-08 | 1994-08-08 | Gas cleaning method in plasma cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0849080A true JPH0849080A (en) | 1996-02-20 |
Family
ID=16516825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20603594A Pending JPH0849080A (en) | 1994-08-08 | 1994-08-08 | Gas cleaning method in plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0849080A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014170742A (en) * | 2013-02-28 | 2014-09-18 | Novellus Systems Incorporated | Ceramic showerhead with embedded rf electrode for capacitively coupled plasma reactor |
-
1994
- 1994-08-08 JP JP20603594A patent/JPH0849080A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014170742A (en) * | 2013-02-28 | 2014-09-18 | Novellus Systems Incorporated | Ceramic showerhead with embedded rf electrode for capacitively coupled plasma reactor |
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