JPH07100865B2 - Cleaning method of low pressure CVD processing apparatus - Google Patents
Cleaning method of low pressure CVD processing apparatusInfo
- Publication number
- JPH07100865B2 JPH07100865B2 JP61055434A JP5543486A JPH07100865B2 JP H07100865 B2 JPH07100865 B2 JP H07100865B2 JP 61055434 A JP61055434 A JP 61055434A JP 5543486 A JP5543486 A JP 5543486A JP H07100865 B2 JPH07100865 B2 JP H07100865B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- processing apparatus
- fluorine
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔概要〕 減圧CVD装置に残留する不所望の堆積物をNF3のプラズマ
によってエッチング除去すると、その処理に伴って装置
内壁に弗素ガスが吸着するので、さらにH2＋N2ガスのプ
ラズマ処理によって、吸着した弗素を除去する。DETAILED DESCRIPTION OF THE INVENTION [Outline] When undesired deposits remaining in a low pressure CVD apparatus are removed by etching with NF 3 plasma, fluorine gas is adsorbed on the inner wall of the apparatus in association with the processing, and therefore H 2 + N Adsorbed fluorine is removed by plasma treatment of 2 gases.
〔産業上の利用分野〕 本発明は半導体装置の製造に用いられる減圧処理装置の
クリーニング処理に関わり、特に減圧CVD装置などに残
留する堆積物をプラズマエッチングで除去した後、装置
の内壁に吸着する弗素を除去するクリーニング処理に関
わる。[Field of Industrial Application] The present invention relates to a cleaning process of a low-pressure processing apparatus used for manufacturing a semiconductor device, and in particular, after removing deposits remaining in a low-pressure CVD apparatus by plasma etching, it is adsorbed on the inner wall of the apparatus. Involved in the cleaning process to remove fluorine.
半導体装置の製造に於いて、ポリSi層やSiO2層を堆積形
成するのにCVD法が用いられる。近年、その処理室の圧
力を減じ、さらに原料ガスをプラズマ化してCVD処理
し、良好な特性の皮膜を堆積させることが行われるよう
になった。In manufacturing a semiconductor device, a CVD method is used to deposit and form a poly-Si layer and a SiO 2 layer. In recent years, the pressure in the processing chamber is reduced, and the raw material gas is turned into plasma to perform a CVD process to deposit a film having good characteristics.
この種のCVD装置では、堆積処理後に半導体基板の支持
台などに残留する不要の堆積物を、プラズマ発生機能を
利用して、エッチング除去することが出来る。例えばWF
6を原料とし、プラズマCVD法によってタングステン層あ
るいは珪化タングステン層を堆積した場合、ウエファ支
持台などにもこれ等の生成物が堆積するので、所定の回
数のCVD処理を行った後、処理室にNF3ガスを導入し、プ
ラズマを発生させてこれ等の堆積物をエッチング除去す
る。In this type of CVD apparatus, unnecessary deposits remaining on the support base of the semiconductor substrate after the deposition process can be removed by etching using the plasma generation function. Eg WF
When 6 is used as the raw material and a tungsten layer or a tungsten silicide layer is deposited by the plasma CVD method, these products are also deposited on the wafer support, etc., so after performing a predetermined number of CVD treatments, place them in the treatment chamber. NF 3 gas is introduced and plasma is generated to remove these deposits by etching.
通常は上記の処理だけでウエファを装填しての処理に戻
る。しかし本発明者達の得た新規な知見によれば、上記
のNF3ガスによるプラズマ処理工程、或いはそれ以前の
処理工程で、処理室の壁面などに弗素が吸着し、ウエフ
ァを装填してのプラズマ処理時にこれが放出されて製造
した半導体装置の特性に好ましくない影響を及ぼすよう
である。Normally, the above process alone returns to the process of loading the wafer. However, according to the new knowledge obtained by the present inventors, in the plasma treatment step using the above NF 3 gas, or in the treatment step before that, fluorine is adsorbed on the wall surface of the treatment chamber and the wafer is loaded. It seems that this is released during plasma processing, which adversely affects the characteristics of the manufactured semiconductor device.
プラズマCVD装置では、生成物の堆積を避けるため壁面
等を冷却しているが、そのため弗素の吸着が起こり易く
なっているという事情もある。In the plasma CVD apparatus, the wall surface and the like are cooled in order to avoid the accumulation of products, but there is also a situation in which the adsorption of fluorine is likely to occur.
NF3ガスによるプラズマ処理を行っただけで通常の工程
を再開すると、例えば堆積した珪化タングステン層が気
泡を抱き込んだり、剥離し易くなるといったことが起こ
る。When the normal process is restarted only by performing the plasma treatment with the NF 3 gas, for example, the deposited tungsten silicide layer may contain bubbles or be easily peeled off.
既述したように、本発明者の見解によれば、これは処理
室内壁に吸着した弗素に起因するものであるから、CVD
工程を開始する前にこれを除去することが必要である。As described above, according to the present inventor's view, this is due to the fluorine adsorbed on the inner wall of the processing chamber, so that the CVD
It is necessary to remove this before starting the process.
この吸着弗素による好ましくない効果は、特許請求の範
囲の範囲の項に記された本発明の方法によって解消され
る。後出の実施例に従って要約すれば、本発明の方法
は、NF3ガスによるプラズマ処理によって処理室内に残
留する堆積物をエッチング除去した後、水素ガスと窒素
ガスの混合ガスを処理室に導入し、プラズマを発生させ
て処理室内壁に吸着した弗素を解放除去するものであ
る。This undesired effect of adsorbed fluorine is eliminated by the method according to the invention as claimed in the claims. In summary according to the examples described later, the method of the present invention is to remove a deposit remaining in the processing chamber by plasma treatment with NF 3 gas and then introduce a mixed gas of hydrogen gas and nitrogen gas into the processing chamber. The plasma is generated to release and remove the fluorine adsorbed on the inner wall of the processing chamber.
本発明ではエッチング作用の大きなNF3ガスによるプラ
ズマ処理で基板の支持台等に残留する不用な堆積物、例
えばタングステン層或いは珪化タングステン層をエッチ
ング除去するが、かかる工程を経た後、処理室でのNF3
ガスを水素ガスと窒素ガスの混合ガスに置換し、プラズ
マを発生させる。In the present invention, unnecessary deposits, such as a tungsten layer or a tungsten silicide layer, remaining on the support of the substrate are removed by etching by plasma treatment with NF 3 gas having a large etching action. NF 3
The gas is replaced with a mixed gas of hydrogen gas and nitrogen gas to generate plasma.
かかるイオン化によって水素は処理装置の壁面等に残留
し、吸着している弗素と反応してNFとなり、排気装置に
よって処理装置外に排気される。Due to such ionization, hydrogen remains on the wall surface of the processing apparatus, reacts with the adsorbed fluorine to become NF, and is exhausted to the outside of the processing apparatus by the exhaust device.
また水素はその取扱いが非常に困難な危険な気体である
が、本発明では、窒素ガスによって水素ガスを希釈し、
水素の危険性を低減するようにしている。Further, hydrogen is a dangerous gas whose handling is very difficult, but in the present invention, hydrogen gas is diluted with nitrogen gas,
We are trying to reduce the risk of hydrogen.
またかかる窒素は水素と共にプラズマ化され水素ラジカ
ルと窒素ラジカルが発生し、水素は上述の如く弗素と反
応するが、窒素は前のNF3によるエッチング工程を経た
後もなお残留している不用な堆積物をさらにエッチング
除去しながら、かかる堆積物中に吸着している弗素に対
する水素との反応を促進する。Also, such nitrogen is plasmatized with hydrogen to generate hydrogen radicals and nitrogen radicals, and hydrogen reacts with fluorine as described above, but nitrogen remains after the previous NF 3 etching step, and unnecessary deposition is caused. While further etching away the material, it promotes the reaction of hydrogen with the fluorine adsorbed in the deposit.
第１図は本発明を効果的に実施し得るプラズマCVD装置
を示す図である。FIG. 1 is a diagram showing a plasma CVD apparatus capable of effectively implementing the present invention.
ここで１は処理室、２は原料ガスの放出口で、シャワー
と呼ばれる部分、３はCVD処理の際ウエファが載置され
る支持台、４は処理室を所定の圧力に下げ或いは反応生
成物を排出するための排気口、５はウエファを加熱する
ためのヒータ、６はウエファの出入口、７は予備排気の
ための準備室である。図では省略されているが、処理室
の壁面を冷却するための冷却水配管も通常の装置には設
けられている。Here, 1 is a processing chamber, 2 is a source gas discharge port, a portion called a shower, 3 is a support on which a wafer is placed during the CVD processing, 4 is a processing chamber for lowering a predetermined pressure or a reaction product Is an exhaust port for discharging the wafer, 5 is a heater for heating the wafer, 6 is an entrance / exit of the wafer, and 7 is a preparation chamber for preliminary exhaust. Although not shown in the figure, a cooling water pipe for cooling the wall surface of the processing chamber is also provided in the normal apparatus.
半導体装置の製造工程で、例えばWSiXを堆積する場合
は、原料供給装置８からWF6とSiH4を供給し、支持台上
のウエファに向けてシャワーから放出される。処理室の
圧力を0.3torr程度の低圧に保ち、高周波電源８から13.
56MHz,300W程度の高周波電力を供給すると、流入したガ
スはプラズマ化し、WSiXが生成し堆積する。In the case of depositing WSi X in the semiconductor device manufacturing process, for example, WF 6 and SiH 4 are supplied from the raw material supply device 8 and discharged from the shower toward the wafer on the support table. Keep the pressure in the processing chamber at a low pressure of about 0.3 torr, and use the high frequency power supplies 8 to 13.
When high-frequency power of 56MHz and 300W is supplied, the inflowing gas becomes plasma and WSi X is generated and deposited.
所定の枚数を処理すると、支持台やシャワー等に堆積し
た不要のWSiXを除去するために、原料ガス供給部からNF
3とN2の混合ガスを送り込み、高周波電界を印加してプ
ラズマを発生させる。このプラズマにより堆積したWSiX
がエッチングされ、排気口から室外に排出される。この
処理は通常行われるものと同じであってもよい。After processing a predetermined number of sheets, in order to remove unnecessary WSi X accumulated on the support and shower, etc.
A mixed gas of 3 and N 2 is sent, and a high frequency electric field is applied to generate plasma. WSi X deposited by this plasma
Is etched and discharged to the outside from the exhaust port. This process may be the same as that normally performed.
本発明ではこの後さらにH2とN2の混合ガスを送り込み、
プラズマ処理を行う。H2とN2との混合比は1:5程度で水
素ガスを窒素ガスで希釈することによって水素ガスの危
険性を低減する。圧力や高周波電力の条件は上述の場合
と同様である。処理時間は装置の大きさや履歴によって
増減すべきであるが30分程度である。In the present invention, after that, a mixed gas of H 2 and N 2 is further fed,
Plasma treatment is performed. The mixing ratio of H 2 and N 2 is about 1: 5, and the danger of hydrogen gas is reduced by diluting hydrogen gas with nitrogen gas. The conditions of pressure and high frequency power are the same as those in the above case. The processing time should be increased or decreased depending on the size and history of the device, but it is about 30 minutes.
この処理では Ｆ＋Ｈ→HF↑ なる反応によって、吸着した弗素が取り出され、排出さ
れるものと考えられる。In this process, it is considered that the adsorbed fluorine is taken out and discharged by the reaction F + H → HF ↑.
また窒素はNF3によるエッチング工程後もなお残留して
いる不要な堆積物をさらにエッチング除去し、この際か
かる堆積物に吸着している弗素を解き放ち、水素との反
応を容易とする。Nitrogen also etches away unwanted deposits that still remain after the NF 3 etching step, at this time releasing fluorine adsorbed on such deposits and facilitating reaction with hydrogen.
以上の処理を行った後、ウエファプロセスの一環である
通常のCVD処理を行う。After performing the above processing, the normal CVD processing which is a part of the wafer process is performed.
Si単結晶上にWSiXをプラズマCVD法で堆積した後、これ
をアニールすると表面に小さな突起が多数発生すること
がある。これは堆積層内に気泡が生じたもので、堆積層
と下地との接着力が弱いと、内蔵されたH2等のガスが表
面に抜けないで界面に集まり、気泡になると考えられ
る。After depositing WSi X on Si single crystal by plasma CVD method and annealing it, many small protrusions may be generated on the surface. This is because bubbles are generated in the deposited layer, and if the adhesive force between the deposited layer and the base is weak, it is considered that the gas such as H 2 contained therein does not escape to the surface and collects at the interface to form bubbles.
処理室内壁から弗素が放出される状態でCVD処理を行う
と、壁面から放出された弗素の影響で接着力が弱まり、
気泡の発生をもたらす。本発明の処理を行うと弗素の放
出がないので、この種の不良が発生しない。この状況を
次表に示す。If the CVD process is performed in a state where fluorine is released from the inner wall of the processing chamber, the adhesive force is weakened due to the effect of the fluorine released from the wall surface,
It causes the generation of bubbles. When the treatment of the present invention is performed, no fluorine is released, so that this kind of defect does not occur. This situation is shown in the table below.
ここで良品というのは、200nmのWSiXを堆積した後、N2
中で1000℃,30分のアニールを行って気泡発生の無かっ
たものである。 Here, a good product is N 2 after deposition of 200 nm WSi X.
No air bubbles were generated after annealing at 1000 ° C for 30 minutes.
この数値からも明らかなように、本発明はウエファプロ
セスの歩留りを大幅に改善するものである。As is clear from this numerical value, the present invention greatly improves the yield of the wafer process.
図は本発明を効果的に実施し得るプラズマCVD装置を示
す図であって、 図に於いて、 １は処理室、２はシャワー、３は支持台、４は排気口、
５はヒータ、６はウエファ出入口、７は準備室、８は原
料供給部、９は高周波電源である。1 is a diagram showing a plasma CVD apparatus capable of effectively implementing the present invention, in which 1 is a processing chamber, 2 is a shower, 3 is a support, 4 is an exhaust port,
Reference numeral 5 is a heater, 6 is a wafer entrance / exit, 7 is a preparation room, 8 is a raw material supply section, and 9 is a high frequency power source.
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/31 Ｃ // Ｈ０１Ｌ 21/285 Ｚ Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI Technical display location H01L 21/31 C // H01L 21/285 Z
Claims (1)
膜形成を行なう減圧CVD処理装置において、基板に対す
る被膜形成工程終了後CVD装置内にNF3ガスを導入してプ
ラズマを発生する工程及び続いてNF3ガスを水素と窒素
との混合体に置き換えてプラズマを発生させる工程を含
むことを特徴とする減圧CVD処理装置のクリーニング
法。1. A low-pressure CVD processing apparatus for forming a film on a substrate by a plasma CVD method under reduced pressure, a step of introducing NF 3 gas into the CVD apparatus after completion of the film-forming step on the substrate, and a step of continuously generating plasma. And a step of replacing the NF 3 gas with a mixture of hydrogen and nitrogen to generate plasma, and cleaning the low pressure CVD processing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61055434A JPH07100865B2 (en) | 1986-03-13 | 1986-03-13 | Cleaning method of low pressure CVD processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61055434A JPH07100865B2 (en) | 1986-03-13 | 1986-03-13 | Cleaning method of low pressure CVD processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62214175A JPS62214175A (en) | 1987-09-19 |
| JPH07100865B2 true JPH07100865B2 (en) | 1995-11-01 |
Family
ID=12998483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61055434A Expired - Lifetime JPH07100865B2 (en) | 1986-03-13 | 1986-03-13 | Cleaning method of low pressure CVD processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07100865B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63267430A (en) * | 1987-04-27 | 1988-11-04 | Toshiba Corp | Cleaning method for inside of reaction chamber |
| JPH01152274A (en) * | 1987-12-09 | 1989-06-14 | Iwatani Internatl Corp | Method for removing pollutant after chlorine fluoride cleaning in film forming operation system |
| JP2810931B2 (en) * | 1988-03-22 | 1998-10-15 | 株式会社 半導体エネルギー研究所 | Method for removing unnecessary carbon in carbon production equipment |
| JP2717170B2 (en) * | 1988-12-27 | 1998-02-18 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus and heat treatment method |
| JPH02185977A (en) * | 1989-01-12 | 1990-07-20 | Sanyo Electric Co Ltd | Film forming vacuum device |
| JP2981749B2 (en) * | 1989-05-30 | 1999-11-22 | 日本真空技術株式会社 | Plasma processing equipment |
| DE69033760T2 (en) * | 1990-01-08 | 2001-10-25 | Lsi Logic Corp | Structure for filtering process gases for use in a chemical vapor deposition chamber |
| JP2837087B2 (en) * | 1993-12-28 | 1998-12-14 | アプライド マテリアルズ インコーポレイテッド | Thin film formation method |
| US5647953A (en) * | 1995-12-22 | 1997-07-15 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma process chamber |
| US6626185B2 (en) | 1996-06-28 | 2003-09-30 | Lam Research Corporation | Method of depositing a silicon containing layer on a semiconductor substrate |
| US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
| TW522475B (en) * | 2000-05-12 | 2003-03-01 | Applied Materials Inc | Method for improving chemical vapor deposition processing |
| US6770214B2 (en) | 2001-03-30 | 2004-08-03 | Lam Research Corporation | Method of reducing aluminum fluoride deposits in plasma etch reactor |
| US20050161060A1 (en) * | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
| JP2009027011A (en) * | 2007-07-20 | 2009-02-05 | Hitachi Kokusai Electric Inc | Substrate treatment device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6126051A (en) * | 1984-07-17 | 1986-02-05 | Stanley Electric Co Ltd | Production of amorphous silicon for electrophotographic sensitive body |
| JPS62200361A (en) * | 1986-02-27 | 1987-09-04 | Sharp Corp | Production of electrophotographic sensitive body |
-
1986
- 1986-03-13 JP JP61055434A patent/JPH07100865B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62214175A (en) | 1987-09-19 |
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