JPH08306645A - Forming method of au thin film - Google Patents
Forming method of au thin filmInfo
- Publication number
- JPH08306645A JPH08306645A JP10960395A JP10960395A JPH08306645A JP H08306645 A JPH08306645 A JP H08306645A JP 10960395 A JP10960395 A JP 10960395A JP 10960395 A JP10960395 A JP 10960395A JP H08306645 A JPH08306645 A JP H08306645A
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- JP
- Japan
- Prior art keywords
- substrate
- gold
- thin film
- single crystal
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は金薄膜の形成方法に関す
る。本発明の方法は、半導体集積回路・光集積回路・磁
気回路等の電子素子、光素子、圧電素子等、あるいは電
子放出素子、記録媒体用電極等の作製に適する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a gold thin film. The method of the present invention is suitable for producing an electronic device such as a semiconductor integrated circuit, an optical integrated circuit, a magnetic circuit, an optical device, a piezoelectric device, an electron-emitting device, a recording medium electrode, or the like.
【０００２】[0002]
【従来の技術】従来、金薄膜は、リードフレーム・ＩＣ
等の厚膜分野の配線や電極、ＧａＡｓ半導体の薄膜配線
等に広く用いられてきた。2. Description of the Related Art Conventionally, gold thin films have been used for lead frames and ICs.
It has been widely used for wirings and electrodes in the field of thick films such as, and thin film wirings of GaAs semiconductors.
【０００３】最近では、Ｓｉ半導体デバイスの高密度化
から、Ａｌ配線のエレクトロマイグレーションが深刻な
問題となっており、重金属である金が配線材料として有
望視されている。特に、耐エレクトロマイグレーション
・対腐食性・低抵抗性・耐メルト性等で優れている大粒
径の単結晶群からなる金結晶薄膜を、基板上に形成する
ことが望まれている。Recently, electromigration of Al wiring has become a serious problem due to high density of Si semiconductor devices, and gold, which is a heavy metal, is regarded as a promising wiring material. In particular, it is desired to form a gold crystal thin film composed of a single crystal group having a large grain size, which is excellent in electromigration resistance, corrosion resistance, low resistance, and melt resistance, on a substrate.
【０００４】従来の金結晶薄膜の形成方法としては、真
空蒸着法・ＣＶＤ法・電解メッキ法・無電解メッキ法等
によるものが知られている。真空蒸着法による金結晶薄
膜の形成方法は次のようにして行う。Ｓｉ、ＳｉＯ2、
ＳｉＮ、ＧａＡｓ、サファイア、Ｃｒ、Ｔｉ、Ｃｕ等の
基板を５００〜７００℃程度に加熱する。この基板へ、
通常１０-6Ｔｏｒｒ以下の真空中で電子ビーム加熱や抵
抗加熱により蒸気にした金を搬送し、堆積させる。この
ような真空蒸着法により得られた比較的大きな単結晶と
しては、粒径が数１０μｍの金単結晶をマイカ（雲母）
上に形成した報告がある（Dennis J.Trevor他 Physical
Review Letters Vol.62 No.8）。また、熱ＣＶＤ法、
ＰＥＣＶＤ法により、Ｓｉ上に金の多結晶薄膜を形成し
た報告がある（N.Misawa他第３７回半導体・集積回路技
術シンポジウムDec.7,1989）。As a conventional method for forming a gold crystal thin film, there are known methods such as a vacuum vapor deposition method, a CVD method, an electrolytic plating method and an electroless plating method. The gold crystal thin film is formed by the vacuum evaporation method as follows. Si, SiO 2 ,
A substrate made of SiN, GaAs, sapphire, Cr, Ti, Cu or the like is heated to about 500 to 700 ° C. To this board,
Usually, gold vaporized by electron beam heating or resistance heating is transported and deposited in a vacuum of 10 -6 Torr or less. As a comparatively large single crystal obtained by such a vacuum deposition method, a gold single crystal having a grain size of several tens of μm is mica (mica).
There is a report formed above (Dennis J. Trevor et al. Physical
Review Letters Vol.62 No.8). In addition, the thermal CVD method,
There is a report of forming a polycrystalline gold thin film on Si by PECVD (N.Misawa et al. 37th Semiconductor and Integrated Circuit Technology Symposium Dec. 7, 1989).
【０００５】しかし、真空蒸着法やＣＶＤ法では、マイ
カ（雲母）や高配向グラファイト等の不活性基板には、
数１０μｍ径の単結晶群からなる金結晶薄膜は形成でき
るが、Ｓｉ・ＧａＡｓ等の半導体材料上やＳｉＯ2・Ｓ
ｉＮ・Ａｌ2Ｏ3等の絶縁体上では、サブミクロン径の単
結晶群か又は多結晶膜になってしまう。However, in the vacuum deposition method or the CVD method, an inert substrate such as mica (mica) or highly oriented graphite is
A gold crystal thin film consisting of a single crystal group with a diameter of several tens of μm can be formed, but on a semiconductor material such as Si / GaAs or SiO 2 · S.
On the insulator such as iN.Al 2 O 3, a single crystal group having a submicron diameter or a polycrystalline film is formed.
【０００６】さらに、真空蒸着法やＣＶＤ法で大粒径単
結晶群からなる金結晶薄膜を形成するには、基板温度を
高温にする必要があるため、高温下に置くことにできな
いデバイスに対しては、多くの制約がある。例えば、Ｓ
ｉ上に金薄膜を形成する場合、共晶温度３６３℃を越え
るとＡｕ−Ｓｉ合金（共晶）が形成されてしまうため、
高温を必要とする大粒径の単結晶群からなる金薄膜の作
製は困難である。Further, in order to form a gold crystal thin film composed of a large grain size single crystal group by a vacuum vapor deposition method or a CVD method, it is necessary to raise the substrate temperature to a high temperature. There are many restrictions. For example, S
When a gold thin film is formed on i, an Au—Si alloy (eutectic) will be formed if the eutectic temperature exceeds 363 ° C.,
It is difficult to prepare a gold thin film composed of a single crystal group with a large grain size that requires high temperature.
【０００７】また、電解メッキ法・無電解メッキ法は、
装飾用の金薄膜形成やリードフレームのメッキ等で古く
から利用されている方法であり、あらかじめ基板表面に
金、銅又はニッケル面を形成した後に金薄膜を形成する
ものである。しかし、これらの方法では、通常、多結晶
膜となり、製法上、単結晶群を形成するような系の制御
は困難である。The electrolytic plating method and the electroless plating method are
This is a method that has been used for a long time for forming a gold thin film for decoration, plating a lead frame, etc., and forming a gold thin film after forming a gold, copper or nickel surface on a substrate surface in advance. However, with these methods, a polycrystalline film is usually formed, and it is difficult to control the system for forming a single crystal group in the manufacturing method.
【０００８】一方、最近、金錯体溶液中の金錯体を分解
処理することにより溶液中の金を過飽和状態にし、単結
晶の金を基板上に堆積・成長させて金薄膜を形成する方
法が提案されている（特願平０３−１３２１７６号）。
この方法においては、平均粒径５０μｍ〜１ｍｍの大粒
径の金単結晶からなる金薄膜が得られている。On the other hand, recently, a method of forming a gold thin film by decomposing a gold complex in a gold complex solution to make the gold in the solution supersaturated and depositing and growing single crystal gold on a substrate is proposed. (Japanese Patent Application No. 03-132176).
In this method, a gold thin film made of a gold single crystal having a large grain size with an average grain size of 50 μm to 1 mm is obtained.
【０００９】[0009]
【発明が解決しようする課題】しかしながら、上述の従
来方法には以下のような問題点がある。すなわち、金単
結晶及び金単結晶からなる金薄膜を基板上に形成し、次
いでこの基板を超音波等で洗浄したとき、基板の表面形
状が荒れていると、金単結晶及び金単結晶からなる金薄
膜と基板との間に微小な空間が生じ、この空間に洗浄液
が入り込むことによって、金単結晶及び金単結晶からな
る金薄膜が基板から脱落する危険性が発生する。However, the above-mentioned conventional method has the following problems. That is, when a gold single crystal and a gold thin film composed of a gold single crystal are formed on a substrate and then this substrate is cleaned by ultrasonic waves or the like, when the surface shape of the substrate is rough, the gold single crystal and the gold single crystal are removed. A minute space is formed between the gold thin film and the substrate, and the cleaning liquid enters the space, so that there is a risk that the gold single crystal and the gold thin film made of the gold single crystal fall off the substrate.
【００１０】そこで本発明の目的は、大粒径の金単結晶
及びその金単結晶からなる金薄膜を基板上に形成させた
とき、金単結晶及び金単結晶からなる金薄膜と基板との
密着性が優れ、基板から脱落しにくい金薄膜の形成方法
を提供することである。Therefore, an object of the present invention is to form a gold single crystal having a large grain size and a gold thin film made of the gold single crystal on a substrate, thereby forming a gold single crystal and a gold thin film made of the gold single crystal and the substrate. It is an object of the present invention to provide a method for forming a gold thin film which has excellent adhesion and does not easily fall off the substrate.
【００１１】[0011]
【課題を解決するための手段】本発明者らは、上記の目
的を達成するために種々の検討を行った結果、本発明を
完成した。すなわち本発明は、金錯体溶液中の金錯体を
分解処理することにより溶液中の金を過飽和状態にし、
金単結晶を基板上に析出・成長させて金薄膜を形成する
金薄膜の形成方法において、前記基板の表面をエッチン
グした後、基板上に金薄膜を形成することを特徴とする
金薄膜の形成方法に関する。The present inventors have completed the present invention as a result of various investigations in order to achieve the above object. That is, the present invention, by decomposing the gold complex in the gold complex solution by supersaturating the gold in the solution,
In a method for forming a gold thin film by depositing and growing a gold single crystal on a substrate, a gold thin film is formed on the substrate after etching the surface of the substrate. Regarding the method.
【００１２】以下、本発明を詳細に説明する。本発明の
方法における基板のエッチングの方法は、特に制限はな
く、通常のエッチング方法で行われる。例えば、ウエッ
トエッチング又はドライエッチングのいずれかの方法で
行うことができる。具体的には、例えば次のようにして
行う。Ｓｉウエハを基板とし、この基板をクロム酸混
液、１０％フッ酸水溶液、バッファーフッ酸水溶液の順
で洗浄し、エッチングする。または、Ｓｉウエハ上にＴ
ｉを真空蒸着してこれを基板とし、この基板をＯ2プラ
ズマを用いてエッチングする。その他として、ガラス上
にＩＴＯを真空蒸着してこれを基板とし、この基板を硫
酸−過酸化水素水混合液を用いてエッチングするなどの
方法がある。The present invention will be described in detail below. The method of etching the substrate in the method of the present invention is not particularly limited, and a usual etching method is used. For example, either wet etching or dry etching can be used. Specifically, for example, it is performed as follows. A Si wafer is used as a substrate, and this substrate is washed with a chromic acid mixed solution, a 10% hydrofluoric acid aqueous solution and a buffer hydrofluoric acid aqueous solution in this order, and then etched. Or T on a Si wafer
i is vacuum-deposited and used as a substrate, and this substrate is etched using O2 plasma. As another method, there is a method in which ITO is vacuum-deposited on glass to form a substrate, and the substrate is etched with a sulfuric acid-hydrogen peroxide mixture solution.
【００１３】本発明で用いる基板としては、後述する金
錯体溶液によって、腐食等の大きな損傷を受けないもの
が望ましい。例えば、Ｓｉ、ＳｉＮ、ガラス等が用いら
れる。また、これらの基板上に、Ｃｒ、Ｔｉ、Ｐｔ、Ｉ
ＴＯ（Indiumu Tin Oxide）等を電子ビーム加熱や抵抗
加熱、スパッタ法等によって真空蒸着したものを用いて
もよい。The substrate used in the present invention is preferably one that is not significantly damaged by corrosion or the like by the gold complex solution described later. For example, Si, SiN, glass or the like is used. In addition, Cr, Ti, Pt, I
You may use what vacuum-deposited TO (Indiumu Tin Oxide) etc. by electron beam heating, resistance heating, a sputtering method, etc.
【００１４】上述のエッチングは、エッチング後の基板
表面の凹凸のＰＶ値が１０ｎｍ以下になるように行うこ
とが適当である。好ましくは５ｎｍ以下、より好ましく
は１ｎｍ以下である。さらには、基板表面の凹凸のピッ
チが結晶の大きさより大きいことが望ましく、５００ｎ
ｍ以上とすることが適当である。好ましくは８００μｍ
以上、より好ましくは１μｍ以上である。The above-mentioned etching is suitably performed so that the PV value of the unevenness on the substrate surface after etching is 10 nm or less. It is preferably 5 nm or less, more preferably 1 nm or less. Furthermore, it is desirable that the pitch of the irregularities on the surface of the substrate is larger than the size of the crystal.
It is suitable to be m or more. Preferably 800 μm
As described above, more preferably 1 μm or more.
【００１５】以下、上述のようにしてエッチングを行っ
た基板への金薄膜の形成方法について説明をする。金薄
膜の形成は、金錯体溶液中の金錯体を分解処理すること
により溶液中の金を過飽和状態にし、金単結晶を基板上
に析出・成長させて行う。The method of forming the gold thin film on the substrate etched as described above will be described below. The gold thin film is formed by decomposing the gold complex in the gold complex solution to make the gold in the solution supersaturated and depositing and growing a gold single crystal on the substrate.
【００１６】好ましい具体例を次に説明する。まず、蒸
留水にヨウ化カリウム及びヨウ素を投入してヨウ素水溶
液を調製し、この水溶液へ金を添加し、十分に攪拌して
溶解させ、［ＡｕＩ4］-を含有する金錯体水溶液を形成
する。このとき水溶液中には、金錯体の他、Ｉ3-、Ｋ+
が存在するものと考えられる。A preferred specific example will be described below. First, potassium iodide and iodine are added to distilled water to prepare an aqueous iodine solution, and gold is added to this aqueous solution and sufficiently stirred to dissolve it to form an aqueous gold complex solution containing [AuI 4 ] -. . At this time, in the aqueous solution, in addition to the gold complex, I 3- , K +
Are believed to exist.
【００１７】次いで、溶液を３０〜２００℃に加熱・昇
温し、ヨウ素成分の揮発を促進させる。溶液系内では、
Ｉ3-の状態で存在するヨウ素成分の気化により、溶液系
内の平衡状態の維持のために［ＡｕＩ4］-の分解が進行
し、金が過飽和の状態となる。Next, the solution is heated to 30 to 200 ° C. and heated to accelerate the volatilization of the iodine component. In the solution system,
The vaporization of the iodine components present in I 3- state, to maintain the equilibrium in the solution system [AuI 4] - decomposition proceeds, the gold is supersaturated.
【００１８】金が過飽和状態になったところで、あらか
じめエッチングを施して平滑性を向上させた基板を溶液
中に速やかに投入する。これにより、基板上に金単体が
析出し、結晶核が形成される。そして、新たな結晶核の
発生と結晶成長が同時に進行する。このとき、結晶核は
自己整合的に単結晶成長する。その後、結晶成長を続け
ることで、平板状に形成した金単結晶同士の衝突が生
じ、単結晶群からなる金結晶薄膜が基板上に形成され
る。When the gold becomes supersaturated, the substrate which has been subjected to etching in advance to improve the smoothness is immediately put into the solution. As a result, simple gold is deposited on the substrate to form crystal nuclei. Then, the generation of new crystal nuclei and the crystal growth proceed at the same time. At this time, the crystal nuclei grow in a single crystal in a self-aligned manner. After that, by continuing the crystal growth, the gold single crystals formed into a flat plate collide with each other, and a gold crystal thin film composed of a single crystal group is formed on the substrate.
【００１９】上記の金薄膜の形成方法に用いられるヨウ
素水溶液は、ヨウ化カリウム以外のヨウ化化合物、例え
ばヨウ化アンモニウム等を使用してもよく、ヨウ化カリ
ウムに限定されない。The iodine aqueous solution used in the method for forming the gold thin film may use an iodide compound other than potassium iodide, such as ammonium iodide, and is not limited to potassium iodide.
【００２０】また溶媒は、メタノール・エタノール等の
アルコール、又はこれらのアルコールと水との混合溶液
を用いてもよい。The solvent may be an alcohol such as methanol or ethanol, or a mixed solution of these alcohols and water.
【００２１】上記溶液に溶解させる金は、金単体の他
に、適当な金化合物、例えばＡｕＩ、ＡｕＩ3等を用い
てもよい。その他溶液中で［ＡｕＩ4］-を十分に形成す
る金化合物を用いることができる。As the gold to be dissolved in the above solution, a suitable gold compound such as AuI or AuI 3 may be used in addition to gold itself. Alternatively, a gold compound that sufficiently forms [AuI 4 ] − in a solution can be used.
【００２２】さらに溶液中の金錯体も、［ＡｕＩ4］-に
限定されるものではなく、［ＡｕＩ 2］-、［ＡｕＣ
ｌ4］-、［Ａｕ（ＣＮ）2］-、［Ａｕ（ＣＮ）3］-等で
あってもよく、これらの金錯体を形成する金化合物又は
／及び溶液条件を用いてもよい。Further, the gold complex in the solution is also [AuIFour]-To
Without limitation, [AuI 2]-, [AuC
lFour]-, [Au (CN)2]-, [Au (CN)3]-Etc.
May be present, gold compounds forming these gold complexes or
/ And solution conditions may be used.
【００２３】溶液中の金錯体の分解処理の手段は、前述
の加熱による方法の他に、還元剤による方法がある。例
えば、ハイドロキノン・ピロガロール・パイロカテキン
・グクシン・メトールハドロキノン・アミドール・メト
ール・亜硫酸ソーダ・チオ硫酸ナトリウム・水酸化ナト
リウム等の溶液中で還元作用を有する各種の物質を作用
させる。As a means for decomposing the gold complex in the solution, there is a method using a reducing agent in addition to the above-mentioned method by heating. For example, various substances having a reducing action are allowed to act in a solution of hydroquinone / pyrogallol / pyrocatechin / gukcine / methol hadroquinone / amide / methol / sodium sulfite / sodium thiosulfate / sodium hydroxide.
【００２４】[0024]
【作用】エッチングで基板表面の凹凸を均一に小さく
し、基板の表面を平滑にすることによって、基板と金単
結晶との接触面積が増えるため、基板と金単結晶との密
着性が向上する。実際、基板上には微少な空間を形成せ
ずに面内方向に結晶方位の揃った平板状の金単結晶群が
形成し、この金単結晶群が結晶成長して金薄膜が形成さ
れる。このように形成された金薄膜は、基板との密着性
が非常に優れたものになっている。[Function] Since the unevenness of the substrate surface is uniformly reduced by etching and the surface of the substrate is made smooth, the contact area between the substrate and the gold single crystal is increased, so that the adhesion between the substrate and the gold single crystal is improved. . In fact, a flat plate-shaped gold single crystal group having a uniform crystal orientation in the in-plane direction is formed on the substrate without forming a minute space, and the gold single crystal group is crystal-grown to form a gold thin film. . The gold thin film thus formed has excellent adhesion to the substrate.
【００２５】[0025]
【実施例】以下、本発明を実施例および比較例によりさ
らに説明するが、本発明はこれらに限定されるものでは
ない。EXAMPLES The present invention will be further described below with reference to examples and comparative examples, but the present invention is not limited thereto.
【００２６】実施例１ Ｓｉウエハを基板として用い、この基板をクロム酸混
液、１０％フッ酸水溶液、バッファ−フッ酸溶液の順で
洗浄し、エッチングした。この基板の表面を原子間力顕
微鏡で観察したところ、基板表面の凹凸は５００μｍ□
内でＰＶ値が０．２ｎｍであり、この表面の凹凸のピッ
チは１０００ｎｍであった。Example 1 A Si wafer was used as a substrate, and this substrate was washed with a chromic acid mixed solution, a 10% hydrofluoric acid aqueous solution, and a buffer-hydrofluoric acid solution in this order and etched. When the surface of this substrate was observed with an atomic force microscope, the unevenness of the substrate surface was 500 μm □.
Among them, the PV value was 0.2 nm, and the pitch of the surface irregularities was 1000 nm.
【００２７】蒸留水５００ｍｌにヨウ化カリウム４０ｇ
及びヨウ素６ｇを投入して攪拌し溶解させた。次いで、
この溶液に金２ｇを投入して攪拌し溶解させた。十分に
溶解させた後、溶液１００ｍｌを分取して開放系の反応
容器に入れ、この反応容器にさらに蒸留水１００ｍｌ加
えて攪拌し、結晶成長溶液Ａを調製した。この結晶成長
溶液Ａを約９０℃に加熱した。この結晶成長溶液Ａにエ
ッチングを行った前記の基板を速やかに投入し、温度を
９０℃に保ったまま放置した。40 g of potassium iodide in 500 ml of distilled water
And 6 g of iodine were added and stirred to dissolve. Then
2 g of gold was added to this solution and stirred to dissolve it. After sufficiently dissolving, 100 ml of the solution was sampled and placed in an open reaction container, and 100 ml of distilled water was further added to this reaction container and stirred to prepare a crystal growth solution A. This crystal growth solution A was heated to about 90 ° C. The etched substrate was immediately added to this crystal growth solution A, and the temperature was kept at 90 ° C. and allowed to stand.
【００２８】１時間後に基板を取り出したところ、基板
上に平板状の金単結晶群が形成されており、平均粒径が
約５００μｍ、厚さ５μｍの平板状単結晶からなる金薄
膜が形成していた。また、基板上に形成された金薄膜の
平板状単結晶は結晶方位が（１１１）に制御されてい
た。When the substrate was taken out after 1 hour, a flat gold single crystal group was formed on the substrate, and a gold thin film made of a flat single crystal having an average grain size of about 500 μm and a thickness of 5 μm was formed. Was there. Further, the crystal orientation of the flat single crystal of the gold thin film formed on the substrate was controlled to (111).
【００２９】金薄膜が形成された基板を超音波洗浄して
も、金薄膜は脱落しなかった。Even when the substrate on which the gold thin film was formed was ultrasonically cleaned, the gold thin film did not fall off.
【００３０】実施例２ Ｓｉウエハ上にＴｉを１０００ｎｍの厚さに真空蒸着
し、Ｏ2プラズマを用いてエッチングしたものを基板と
して用いた。この基板の表面の凹凸を原子間力顕微鏡で
観察したところ、基板の表面の凹凸は、５００μｍ□内
でＰＶ値が０．８ｎｍであり、この基板表面の凹凸のピ
ッチは１２００ｎｍであった。Example 2 A substrate was obtained by vacuum-depositing Ti on a Si wafer to a thickness of 1000 nm and etching it using O 2 plasma. When the irregularities on the surface of the substrate were observed by an atomic force microscope, the irregularities on the surface of the substrate had a PV value of 0.8 nm within 500 μm □, and the pitch of the irregularities on the surface of the substrate was 1200 nm.
【００３１】実施例１と同様にして調製した結晶成長溶
液Ａを９０℃に加熱した。この結晶成長溶液Ａにエッチ
ングを行った前記の基板を速やかに投入し、温度を９０
℃に保ったまま放置した。The crystal growth solution A prepared in the same manner as in Example 1 was heated to 90 ° C. The above-mentioned substrate that had been etched was rapidly charged into this crystal growth solution A, and the temperature was raised to 90
It was left as it was kept at ℃.
【００３２】１時間後に基板を取り出したところ、基板
上に平板状金単結晶群が形成されおり、平均粒径が約８
３０μｍ、厚さ１０μｍの平板状単結晶からなる金薄膜
が形成していた。また、基板上に形成された金薄膜の平
板状単結晶は結晶方位が（１１１）に制御されていた。When the substrate was taken out after 1 hour, a flat gold single crystal group was formed on the substrate and the average grain size was about 8
A gold thin film having a plate-like single crystal with a thickness of 30 μm and a thickness of 10 μm was formed. Further, the crystal orientation of the flat single crystal of the gold thin film formed on the substrate was controlled to (111).
【００３３】金薄膜が形成された基板を超音波洗浄して
も、１００個の結晶中、２個の結晶しか脱落しなかっ
た。Even if the substrate on which the gold thin film was formed was ultrasonically cleaned, only 2 out of 100 crystals fell off.
【００３４】実施例３ ガラス上にＩＴＯを５０００ｎｍの厚さに真空蒸着した
ものを基板として用いた。この基板を硫酸−過酸化水素
水混合液を用いてエッチングした。この基板の表面を原
子間力顕微鏡で観察したところ、基板の表面の凹凸は５
００μｍ□内でＰＶ値が１ｎｍであり、この基板表面の
凹凸のピッチは８５０ｎｍであった。Example 3 ITO was vacuum-deposited on glass to a thickness of 5000 nm and used as a substrate. This substrate was etched using a sulfuric acid-hydrogen peroxide mixture solution. When the surface of this substrate was observed with an atomic force microscope, the unevenness on the surface of the substrate was 5
The PV value was 1 nm in 00 μm, and the pitch of the irregularities on the substrate surface was 850 nm.
【００３５】実施例１と同様にして調製した結晶成長溶
液Ａを９０℃に加熱した。この結晶成長溶液Ａにエッチ
ングを行った前記の基板を速やかに投入し、温度を９０
℃に保ったまま放置した。The crystal growth solution A prepared in the same manner as in Example 1 was heated to 90 ° C. The above-mentioned substrate that had been etched was rapidly charged into this crystal growth solution A, and the temperature was raised to 90
It was left as it was kept at ℃.
【００３６】１時間後に基板を取り出したところ基板上
に平板状の金単結晶群が形成されており、平均粒径が約
３８０μｍ、厚さ５μｍの平板状単結晶からなる金薄膜
が形成していた。また、基板上に形成された金薄膜の平
板状単結晶は結晶方位が（１１１）に制御されていた。When the substrate was taken out after 1 hour, a flat gold single crystal group was formed on the substrate, and a gold thin film made of a flat single crystal having an average grain size of about 380 μm and a thickness of 5 μm was formed. It was Further, the crystal orientation of the flat single crystal of the gold thin film formed on the substrate was controlled to (111).
【００３７】金薄膜が形成された基板を超音波洗浄して
も、１００個の結晶中、３個の結晶しか脱落しなかっ
た。Even when the substrate on which the gold thin film was formed was ultrasonically cleaned, only 3 crystals fell out of 100 crystals.
【００３８】比較例 ガラス基板上にＩＴＯを５０００ｎｍの厚さに真空状着
し、エッチングを行わずに本比較例の基板とした。この
基板の表面の凹凸を原子間力顕微鏡で観察したところ、
基板表面の凹凸は５００μｍ□内でＰＶ値は１８ｎｍで
あり、この基板表面の凹凸のピッチは５００ｎｍであっ
た。Comparative Example ITO was vacuum-deposited on a glass substrate to a thickness of 5000 nm and was used as a substrate for this comparative example without etching. When observing the unevenness of the surface of this substrate with an atomic force microscope,
The unevenness on the substrate surface was 500 nm and the PV value was 18 nm, and the pitch of the unevenness on the substrate surface was 500 nm.
【００３９】実施例１と同様にして調製した結晶成長溶
液Ａを９０℃に加熱した。この結晶成長溶液Ａに前記の
基板を速やかに投入し、温度を９０℃に保ったまま放置
した。The crystal growth solution A prepared in the same manner as in Example 1 was heated to 90 ° C. The above-mentioned substrate was immediately put into this crystal growth solution A, and left while keeping the temperature at 90 ° C.
【００４０】１時間後に基板を取り出したところ、基板
上に平板状の金単結晶群が形成されており、平均粒径が
約２８０μｍ、厚さ３μｍの平板状単結晶からなる金薄
膜が形成していた。また、基板上に形成された金薄膜の
平板状単結晶は結晶方位が（１１１）に制御されてい
た。When the substrate was taken out after 1 hour, a flat gold single crystal group was formed on the substrate, and a gold thin film made of a flat single crystal with an average grain size of about 280 μm and a thickness of 3 μm was formed. Was there. Further, the crystal orientation of the flat single crystal of the gold thin film formed on the substrate was controlled to (111).
【００４１】金薄膜が形成された基板を超音波洗浄する
ことにより、１００個の結晶中、８２個の結晶が脱落し
た。By ultrasonically cleaning the substrate on which the gold thin film was formed, 82 out of 100 crystals fell off.
【００４２】[0042]
【発明の効果】以上の説明から明らかなように本発明に
よれば、エッチングで基板表面の凹凸を均一に小さく
し、基板の表面を平滑にすることによって、密着性のよ
い金薄膜を基板上に形成させることが可能になる。その
結果、超音波等の洗浄処理においても金薄膜が基板から
脱落しにくくなり、金薄膜による優れた配線や電極を提
供することができる。As is apparent from the above description, according to the present invention, the unevenness of the surface of the substrate is uniformly reduced by etching, and the surface of the substrate is smoothed, so that a gold thin film having good adhesion is formed on the substrate. Can be formed. As a result, the gold thin film is less likely to fall off from the substrate even in the cleaning process such as ultrasonic waves, and it is possible to provide excellent wiring and electrodes made of the gold thin film.
Claims (3)
とにより溶液中の金を過飽和状態にし、金単結晶を基板
上に析出・成長させて金薄膜を形成する金薄膜の形成方
法において、前記基板の表面をエッチングした後、基板
上に金薄膜を形成することを特徴とする金薄膜の形成方
法。1. A method for forming a gold thin film, comprising decomposing a gold complex in a gold complex solution to bring the gold in the solution into a supersaturated state and depositing and growing a gold single crystal on a substrate to form a gold thin film. A method for forming a gold thin film, comprising forming a gold thin film on the substrate after etching the surface of the substrate.
となるようにエッチングを行う請求項１記載の金薄膜の
形成方法。2. The method for forming a gold thin film according to claim 1, wherein etching is performed so that the PV value of the irregularities on the substrate surface is 10 nm or less.
上となるようにエッチングを行う請求項２記載の金薄膜
の形成方法。3. The method for forming a gold thin film according to claim 2, wherein etching is performed so that the pitch of the irregularities on the substrate surface is 500 nm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10960395A JPH08306645A (en) | 1995-05-08 | 1995-05-08 | Forming method of au thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10960395A JPH08306645A (en) | 1995-05-08 | 1995-05-08 | Forming method of au thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08306645A true JPH08306645A (en) | 1996-11-22 |
Family
ID=14514476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10960395A Pending JPH08306645A (en) | 1995-05-08 | 1995-05-08 | Forming method of au thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08306645A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038350A1 (en) * | 1997-02-28 | 1998-09-03 | The Whitaker Corporation | Direct deposition of gold |
-
1995
- 1995-05-08 JP JP10960395A patent/JPH08306645A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038350A1 (en) * | 1997-02-28 | 1998-09-03 | The Whitaker Corporation | Direct deposition of gold |
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