JPH08288221A - Low-pressure chemical vapor deposition device - Google Patents
Low-pressure chemical vapor deposition deviceInfo
- Publication number
- JPH08288221A JPH08288221A JP6163179A JP16317994A JPH08288221A JP H08288221 A JPH08288221 A JP H08288221A JP 6163179 A JP6163179 A JP 6163179A JP 16317994 A JP16317994 A JP 16317994A JP H08288221 A JPH08288221 A JP H08288221A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- source gas
- compound source
- boat
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims description 32
- 239000010453 quartz Substances 0.000 claims abstract description 93
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 150000001875 compounds Chemical class 0.000 claims abstract description 91
- 238000006243 chemical reaction Methods 0.000 claims abstract description 80
- 235000012431 wafers Nutrition 0.000 claims abstract description 58
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000007740 vapor deposition Methods 0.000 claims description 69
- 238000002347 injection Methods 0.000 claims description 41
- 239000007924 injection Substances 0.000 claims description 41
- 238000003780 insertion Methods 0.000 claims description 11
- 230000037431 insertion Effects 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000006200 vaporizer Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 31
- 238000000034 method Methods 0.000 abstract description 28
- 239000010408 film Substances 0.000 abstract description 15
- 239000007789 gas Substances 0.000 description 71
- 230000008569 process Effects 0.000 description 26
- 238000000151 deposition Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005019 vapor deposition process Methods 0.000 description 8
- 230000002265 prevention Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 101100328887 Caenorhabditis elegans col-34 gene Proteins 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は低圧化学蒸着装置に関す
るもので、詳しくはウェーハ上に良質の化合物を蒸着し
て半導体素子をより高集積化し得るようにした低圧化学
蒸着装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-pressure chemical vapor deposition apparatus, and more particularly to a low-pressure chemical vapor deposition apparatus capable of vapor-depositing a high-quality compound on a wafer so that semiconductor elements can be highly integrated.
【０００２】[0002]
【従来の技術】一般に、半導体の製造に必要な絶縁膜、
誘電膜及び導電膜等を蒸着するためには低圧化学蒸着(l
ow pressure chemical vapor deposition)技術を用いて
いる。このような蒸着技術は、真空状態で加熱して化合
物ソースガスであるＳｉＨ4、Ｓｉ2 Ｈ6 、ＴＥＯＳ、
ＰＨ3 、ＮＨ3 、Ｎ2 Ｏ、ＴＭＯＢ、ＴＭＯＰ、Ｏ2、
Ｎ2 等を熱分解してからウェーハ上に蒸着するものであ
る。しかし、化合物ソースガスは熱分解温度がそれぞれ
違うため、温度につれて最適の蒸着工程条件を維持する
ための管理上の問題があり、かつ化合物薄膜の蒸着工程
温度が高くてウェーハ上に蒸着されている種々の薄膜間
に熱衝撃が発生し、物理的特性が変化して電気的特性が
劣化するため半導体の高集積化及び大量生産に差し支え
を招来する。特に低圧化学蒸着技術において、反応炉内
のウェーハの位置に応じてウェーハ上に蒸着される化合
物薄膜の組成が互いにやや違うため、蒸着工程だけでな
く後続工程でも問題が発生する可能性が大変高い。又、
このような化学的反応条件を完全に満足させることが難
しいため化学的反応過程で汚染が発生する心配がある。2. Description of the Related Art Generally, an insulating film necessary for manufacturing a semiconductor,
Low pressure chemical vapor deposition (l
ow pressure chemical vapor deposition) technology is used. Such a deposition technique is performed by heating in a vacuum state and compound source gases such as SiH 4 , Si 2 H 6 , TEOS,
PH 3 , NH 3 , N 2 O, TMOB, TMOP, O 2 ,
N 2 and the like are thermally decomposed and then vapor-deposited on the wafer. However, since the compound source gases have different thermal decomposition temperatures, there is a management problem to maintain the optimum deposition process conditions depending on the temperature, and the deposition temperature of the compound thin film is high and is deposited on the wafer. Thermal shock occurs between various thin films, and physical properties change and electrical properties deteriorate, which hinders high integration and mass production of semiconductors. Especially in the low pressure chemical vapor deposition technology, the composition of the compound thin film deposited on the wafer is slightly different from each other depending on the position of the wafer in the reaction furnace, so there is a high possibility that problems will occur not only in the vapor deposition process but also in subsequent processes. . or,
Since it is difficult to completely satisfy such chemical reaction conditions, there is a concern that contamination may occur during the chemical reaction process.
【０００３】以下、従来の低圧化学蒸着装置の代表的例
を添付図面に基づいて説明する。図１９は従来の低圧化
学蒸着装置の一例の蒸着工程の進行状態を示す断面図、
図２０はボートが分離された状態を示す断面図である。
同図に示すように、この装置は、一側に化合物ソースガ
ス注入管１ａが連結され、他側に排出管１ｂが連結され
た蒸着機ベース１と、該蒸着機ベース１に気密に結合さ
れる外部石英管２ｂとこの外部石英管２ｂの内部に設置
され内部に形成された蒸着反応空間Ｓが前記化合物ソー
スガス注入管１ａに連通され、外部石英管２ｂとの間に
前記排出管１ｂに連通される化合物ソースガス排出路２
ｃが形成される内部石英管２ａとの二重管形態の反応炉
２と、前記蒸着機ベース１の下端の開口部を開閉する開
閉板３と、該開閉板３上に安着され複数のウェーハＷが
搭載されるボート４と、前記反応炉２の周囲に設置され
る反応炉加熱手段５とから構成されている。A typical example of a conventional low pressure chemical vapor deposition apparatus will be described below with reference to the accompanying drawings. FIG. 19 is a cross-sectional view showing the progress of the vapor deposition process of an example of a conventional low pressure chemical vapor deposition apparatus,
FIG. 20 is a sectional view showing a state where the boat is separated.
As shown in the figure, this apparatus is connected to a vapor deposition machine base 1 having a compound source gas injection pipe 1a connected to one side and an exhaust pipe 1b connected to the other side, and the vapor deposition machine base 1 is hermetically connected to the vapor deposition machine base 1. The external quartz tube 2b and the vapor deposition reaction space S formed inside the external quartz tube 2b are communicated with the compound source gas injection tube 1a, and the exhaust tube 1b is connected to the external quartz tube 2b. Compound source gas discharge path 2 in communication
a double-tube type reaction furnace 2 with an internal quartz tube 2a in which c is formed, an opening / closing plate 3 for opening and closing the opening at the lower end of the vapor deposition machine base 1, and a plurality of opening / closing plates 3 It is composed of a boat 4 on which a wafer W is mounted and a reaction furnace heating means 5 installed around the reaction furnace 2.
【０００４】図面のうち、未説明符号１ｃは蒸着機ベー
ス１の内部に突出形成された支持片、６は蒸着設備本
体、７は蒸着機ベース１を蒸着設備本体６に固定するた
めの固定ボルト、８はボート４を乗降させるラムで、そ
の上端にはボート支持板８ａが形成されている。In the drawings, an unexplained reference numeral 1c is a support piece projectingly formed inside the vapor deposition machine base 1, 6 is a vapor deposition equipment body, and 7 is a fixing bolt for fixing the vapor deposition equipment base 1 to the vapor deposition equipment body 6. , 8 are rams for getting on and off the boat 4, and a boat support plate 8a is formed at the upper end thereof.
【０００５】このように構成された装置によりウェーハ
Ｗに化合物薄膜を蒸着するためには、図１９に示すよう
に、ボート４を分離してボート４に複数のウェーハＷを
搭載し、ラム８を用いてボート４を反応炉２の蒸着反応
空間Ｓ内に挿入するとともに開閉板３を閉じたあと、真
空装置（図示せず）及び加熱手段５により反応炉２の蒸
着反応空間Ｓ内の真空度及び温度を蒸着工程に適するよ
うに維持しながら化合物ソースガス注入管１ａを通じて
化合物ソースガスを蒸着反応空間Ｓ内に注入する。反応
炉２の下端に注入された化合物ソースガスは内部石英管
２ａの下部を経て上昇する間、熱分解及び蒸着反応する
ことにより化合物薄膜がウェーハＷ上に蒸着される。こ
の際に、生成される反応生成物は真空装置（図示せず）
の吸入力により上端部から内部石英管２ａと外部石英管
２ｂ間に形成された排出路２ｃと排出管１ｂを通じて外
部へ排出される。In order to deposit a compound thin film on the wafer W by the apparatus thus constructed, as shown in FIG. 19, the boat 4 is separated, a plurality of wafers W are mounted on the boat 4, and the ram 8 is mounted. After the boat 4 is inserted into the vapor deposition reaction space S of the reaction furnace 2 and the opening / closing plate 3 is closed, the degree of vacuum in the vapor deposition reaction space S of the reaction furnace 2 is set by a vacuum device (not shown) and heating means 5. And, the compound source gas is injected into the deposition reaction space S through the compound source gas injection pipe 1a while maintaining the temperature suitable for the deposition process. While the compound source gas injected into the lower end of the reaction furnace 2 passes through the lower part of the internal quartz tube 2a and rises, a compound thin film is deposited on the wafer W by thermal decomposition and deposition reaction. At this time, the reaction product produced is a vacuum device (not shown).
Is discharged from the upper end to the outside through the discharge passage 2c formed between the inner quartz tube 2a and the outer quartz tube 2b and the discharge tube 1b.
【０００６】一方、半導体の製造工程では、ウェーハＷ
上に自然酸化膜(native oxide)が形成される場合に蒸着
される化合物薄膜の化学的、物理的特性が変換するの
で、良質の薄膜を蒸着させるためにはウェーハＷ上に自
然酸化膜が形成されることを防止すべきである。従っ
て、一般に酸化剤である酸素を除去し、不活性雰囲気
（通常Ｎ2 雰囲気）でボート４を反応炉２の内部又は外
部に移動させている。On the other hand, in the semiconductor manufacturing process, the wafer W
Since the chemical and physical characteristics of the compound thin film deposited when a native oxide film is formed on the wafer W are changed, a native oxide film is formed on the wafer W in order to deposit a good quality thin film. Should be prevented. Therefore, oxygen, which is generally an oxidant, is removed, and the boat 4 is moved inside or outside the reaction furnace 2 in an inert atmosphere (usually N 2 atmosphere).
【０００７】又、一般に蒸着過程では化合物薄膜がウェ
ーハＷだけに蒸着されなく、内外部石英管２ａ，２ｂに
も蒸着され、このように内外部石英管２ａ，２ｂに薄膜
が蒸着されると蒸着機ベース１から内外部石英管２ａ，
２ｂを分離し、洗浄して蒸着物質を除去するか又は新し
い石英管で交替しなければならない。In general, in the vapor deposition process, the compound thin film is not vapor-deposited only on the wafer W, but is vapor-deposited on the inner and outer quartz tubes 2a and 2b as well. From the machine base 1 to the inner and outer quartz tubes 2a,
2b must be separated and washed to remove the deposited material or replaced with a new quartz tube.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の装置においては、冷たい化合物ソースガスが
反応炉２の内部石英管２ａの下端に直接注入されるた
め、反応炉２の下部に位置するウェーハＷに対しては化
合物ソースガスが十分に加熱及び活性化されなかった状
態で蒸着反応が起こってドーピングが不均一になるた
め、蒸着される薄膜が不安定となり、かつ蒸着炉内のウ
ェーハの位置に応じて膜質の組成及び厚さが不均一にな
る。However, in such a conventional apparatus, since the cold compound source gas is directly injected into the lower end of the inner quartz tube 2a of the reaction furnace 2, it is located in the lower part of the reaction furnace 2. For the wafer W, the deposition reaction occurs in a state where the compound source gas is not sufficiently heated and activated, and the doping becomes non-uniform, so that the thin film to be deposited becomes unstable, and The composition and thickness of the film quality become non-uniform depending on the position.
【０００９】又、化合物ソースガスが内部石英管２ａを
通じて上昇した後、その上部で内外部石英管２ａ，２ｂ
間に形成された排出路２ｃを通じて流動されるため、反
応炉加熱手段５の熱が排出される過程にある化合物ソー
スガス側に先ず伝達され、流入される過程にある化合物
ソースには遅く伝達されるので、加熱手段５の加熱効果
を低下するのみならず、反応炉２内で薄膜を蒸着させる
時にウェーハだけに蒸着されなく反応炉２の内外部石英
管２ａ，２ｂにも薄膜が蒸着され、累積されて加熱手段
５の輻射熱を遮断するので加熱手段５の加熱効果を低下
させる。さらに他の要因となるため、内外部石英管２
ａ，２ｂを使用する反応炉２では加熱手段５の加熱効果
低下による電力消費が高く、温度調節が難しく、内外部
石英管２ａ，２ｂの管理も面倒であった。Further, after the compound source gas rises through the inner quartz tube 2a, the inner and outer quartz tubes 2a and 2b are formed above it.
Since it is flowed through the discharge passage 2c formed between the two, the heat of the reactor heating means 5 is first transferred to the compound source gas side in the process of being discharged and then slowly transferred to the compound source in the process of flowing in. Therefore, not only the heating effect of the heating means 5 is lowered, but also when the thin film is deposited in the reaction furnace 2, the thin film is not deposited only on the wafer but also on the inner and outer quartz tubes 2a and 2b of the reaction furnace 2. Since the radiation heat of the heating means 5 is accumulated and cut off, the heating effect of the heating means 5 is reduced. The inner and outer quartz tubes 2
In the reaction furnace 2 using a and 2b, power consumption is high due to a decrease in heating effect of the heating means 5, temperature control is difficult, and control of the inner and outer quartz tubes 2a and 2b is troublesome.
【００１０】又、従来の装置においては、図２０に示す
ように、開閉板３を開放しウェーハＷ及びボート４を反
応炉２から分離した状態で不活性ガスであるＮ2 ガスを
内部石英管２ａの下部から上部に流入する過程中に上昇
気流が形成されながら酸化剤である酸素がＮ2 ガスとと
もに反応炉２の内部に流入され、ウェーハＷが搭載され
たボート４を反応炉２内の蒸着位置に上昇移動させる過
程で反応炉２の内部の高温度及び流入酸素によりウェー
ハＷ上に不必要な酸素膜が形成されるため、化合物薄膜
の特性を低下させる問題点があった。Further, in the conventional apparatus, as shown in FIG. 20, with the opening / closing plate 3 opened and the wafer W and the boat 4 separated from the reaction furnace 2, N 2 gas, which is an inert gas, is fed into the internal quartz tube. Oxygen, which is an oxidant, is introduced into the reaction furnace 2 together with N 2 gas while an ascending air current is formed during the process of flowing from the lower part to the upper part of the 2a, and the boat 4 on which the wafer W is mounted is moved to the inside of the reaction furnace 2. Since the unnecessary oxygen film is formed on the wafer W due to the high temperature inside the reaction furnace 2 and the inflowing oxygen during the process of moving up to the deposition position, there is a problem that the characteristics of the compound thin film are deteriorated.
【００１１】終わりに、従来の装置においては、蒸着機
ベース１が蒸着設備本体６に固定ボルト７により固定さ
れ、内外部石英管２ａ，２ｂは単に蒸着機１に載せられ
た状態にあるため、内外部石英管２ａ，２ｂを蒸着機ベ
ース１等から分離するか組立するのに長時間が所要さ
れ、その作業が面倒である問題がある。Finally, in the conventional apparatus, the vapor deposition machine base 1 is fixed to the vapor deposition equipment main body 6 by the fixing bolts 7, and the inner and outer quartz tubes 2a and 2b are simply placed on the vapor deposition machine 1. It takes a long time to separate or assemble the inner and outer quartz tubes 2a and 2b from the vapor deposition machine base 1 and the like, and there is a problem that the work is troublesome.
【００１２】従って、本発明は前述したような従来の問
題点に鑑みてなされたもので、反応炉を構成する内外部
石英管の間に化合物ソースガス供給路を形成して化合物
ソースガスがウェーハを搭載したボートの上部から下部
に下降供給されるようにすることにより、これらの化合
物ソースガスを十分に混合及び予熱された状態で蒸着反
応空間に注入して、均一膜質及び厚さの化合物薄膜を得
るようにした低圧化学蒸着装置を提供することをその目
的とする。本発明の他の目的は、Ｎ2 を用いる洗浄時に
周囲の酸素が混入されなくて不必要な酸化膜が形成され
ることによる不良率を極小化することである。Therefore, the present invention has been made in view of the above-mentioned conventional problems, and a compound source gas supply path is formed between the inner and outer quartz tubes forming the reaction furnace so that the compound source gas is transferred to the wafer. These compound source gases are sufficiently mixed and preheated to be injected into the vapor deposition reaction space by being supplied downward from the upper part to the lower part of a boat equipped with a compound thin film having a uniform film quality and thickness. It is an object of the present invention to provide a low pressure chemical vapor deposition apparatus adapted to obtain Another object of the present invention is to minimize the defective rate due to the formation of an unnecessary oxide film without the inclusion of ambient oxygen during cleaning with N 2 .
【００１３】[0013]
【課題を解決するための手段】このような目的を達成す
るために本発明は、一側に化合物ソースガス供給管が設
置され他側に排出管が設置された蒸着機ベースと、前記
蒸着機ベースに気密に結合される反応炉と、前記蒸着機
ベースの下端開口部を開閉する開閉板と、前記開閉板を
貫通して昇降し上端にボート支持板が形成されたラム
と、前記ボート支持板上に安着され複数のウェーハが搭
載されるボートと、前記化合物ソースガス供給管に下端
が連結され、上端はボートの上端に臨む注入器及び前記
反応炉の周囲に設置される反応炉加熱手段とから構成さ
れることを特徴とする低圧化学蒸着装置を提供する。In order to achieve such an object, the present invention provides a vapor deposition machine base having a compound source gas supply pipe on one side and a discharge pipe on the other side, and the vapor deposition machine. A reaction furnace airtightly coupled to the base, an opening / closing plate that opens and closes the lower end opening of the vapor deposition machine base, a ram that passes through the opening and closing plate and moves up and down to form a boat support plate, and the boat support. A boat on which a plurality of wafers are settled on a plate and a lower end is connected to the compound source gas supply pipe, and an upper end is an injector facing the upper end of the boat, and a reactor heating device installed around the reactor. And a low pressure chemical vapor deposition apparatus.
【００１４】[0014]
【実施例】以下、本発明による低圧化学蒸着装置を添付
図面に示す実施例に基づいて詳細に説明する。図１及び
図２は本発明による低圧化学蒸着装置の一実施例を示す
もので、図１は本発明による低圧化学蒸着装置の蒸着工
程進行状態を示す縦断面図、図２は本発明による低圧化
学蒸着装置のボートの分離状態を示す縦断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A low pressure chemical vapor deposition apparatus according to the present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings. 1 and 2 show an embodiment of a low pressure chemical vapor deposition apparatus according to the present invention. FIG. 1 is a longitudinal sectional view showing a state of progress of a vapor deposition process of the low pressure chemical vapor deposition apparatus according to the present invention, and FIG. It is a longitudinal cross-sectional view which shows the separated state of the boat of a chemical vapor deposition apparatus.
【００１５】同図に示すように、本発明による低圧化学
蒸着装置は、一側に化合物ソースガス供給管１１が設置
され、他側に排出管１２が設置された蒸着機ベース１０
と、前記蒸着機ベース１０に気密に結合される石英管２
１を有する反応炉２０と、前記蒸着機ベース１０の下端
開口部を開閉する開閉板３０と、前記開閉板３０を貫通
して昇降し上端にボート支持板４１が形成されたラム４
０と、前記ボート支持板４１上に安着され、複数のウェ
ーハが搭載されるボート５０と、前記化合物ソースガス
供給管１１に下端が連結され上端はボート５０の上端に
臨む注入器６０及び前記反応炉２０の周囲に設置される
反応炉加熱手段７０とから構成される。As shown in the figure, the low pressure chemical vapor deposition apparatus according to the present invention has a vapor deposition machine base 10 having a compound source gas supply pipe 11 installed on one side and an exhaust pipe 12 installed on the other side.
And a quartz tube 2 that is hermetically coupled to the vapor deposition machine base 10.
1 and the opening / closing plate 30 for opening / closing the lower end opening of the vapor deposition machine base 10, and the ram 4 having the boat support plate 41 formed at the upper end by going up and down through the opening / closing plate 30.
0, a boat 50 seated on the boat support plate 41, on which a plurality of wafers are mounted, a lower end connected to the compound source gas supply pipe 11, and an upper end facing the upper end of the boat 50. It is composed of a reactor heating means 70 installed around the reactor 20.
【００１６】前記蒸着器ベース１０は蒸着設備本体（図
示せず）に結合されるもので、石英管２１を分離し得る
ように分解及び結合可能に設置される。前記反応炉２０
を構成する石英管２１は全体的に一定直径を有し、上端
が閉鎖され下端が開放された円筒形に形成される。前記
開閉板３０はウェーハＷが搭載されたボート５０をロー
ディング及びアンローディングさせる時に蒸着機ベース
１０の下端の開口部を開閉するもので、その上面には開
閉板３０の上面に薄膜が蒸着されることを防止するため
にボート支持板４１を取り囲む蒸着防止リング３１が装
着されている。前記蒸着防止リング３１はボート支持板
４１を取り囲む円筒形本体３２と開閉板３０の上面に密
着固定されるフランジ部３３とから構成される。前記ラ
ム４０は油圧シリンダー等の直線運動機構（図示せず）
により昇降可能に設置されたものである。前記ボート５
０は複数（通常１００枚程度）のウェーハＷを所定間隔
を搭載し得るように複数（通常三つ）の支柱にウェーハ
Ｗの縁部が掛かる掛止段を形成したもので、下端には反
応生成物が円滑に排出されるよう空間を確保するための
ボート支持部５１が結合される。The vaporizer base 10 is coupled to a vapor deposition equipment body (not shown), and is installed so that the quartz tube 21 can be disassembled and coupled so as to be separated. The reaction furnace 20
The quartz tube 21 constituting the above has a constant diameter as a whole, and is formed in a cylindrical shape having an upper end closed and a lower end opened. The opening / closing plate 30 opens and closes the opening at the lower end of the vapor deposition machine base 10 when loading and unloading the boat 50 on which the wafer W is loaded, and a thin film is deposited on the upper surface of the opening / closing plate 30 on the upper surface thereof. In order to prevent this, a vapor deposition prevention ring 31 that surrounds the boat support plate 41 is attached. The vapor deposition prevention ring 31 is composed of a cylindrical main body 32 surrounding the boat support plate 41 and a flange portion 33 that is closely fixed to the upper surface of the opening / closing plate 30. The ram 40 is a linear movement mechanism (not shown) such as a hydraulic cylinder.
It was installed so that it can be raised and lowered by. The boat 5
Reference numeral 0 denotes a plurality of (usually about 100) wafers W having a plurality of (usually three) support posts formed with hooking steps for engaging the edges of the wafers W so that a plurality of (usually about 100) wafers W can be mounted at predetermined intervals. A boat support 51 for securing a space for smoothly discharging the product is connected.
【００１７】前記注入器６０は下端が化合物ソースガス
供給管１１に連結される状態で蒸着機１０の内側壁に固
定され、上端は少なくともローディングされたボート５
０の上端に至るように設置され、化合物ソースガス供給
管１１から供給された化合物ソースガスが蒸着反応空間
Ｓの上端から噴出されるようになっている。又、注入器
６０は石英材で形成されたもので、化合物ソースガス供
給管１１との結合は通常の管ジョイント(pipe joint)を
使用できる。前記加熱蒸着７０は通常の電熱ヒーター
で、上端は反応炉２０を形成する石英管２１の上端より
高く設置され、下端はローディングされたボート５０の
最下端に搭載されたウェーハＷの高さに一致する高さに
至るように設置される。The injector 60 is fixed to the inner wall of the vapor deposition machine 10 with its lower end connected to the compound source gas supply pipe 11, and its upper end is at least loaded with the boat 5.
It is installed so as to reach the upper end of 0, and the compound source gas supplied from the compound source gas supply pipe 11 is ejected from the upper end of the vapor deposition reaction space S. Further, the injector 60 is made of a quartz material, and the compound source gas supply pipe 11 can be connected by using a normal pipe joint. The heating vapor deposition 70 is an ordinary electric heater, the upper end of which is installed higher than the upper end of the quartz tube 21 forming the reaction furnace 20, and the lower end of which is the same as the height of the wafer W mounted at the lowermost end of the loaded boat 50. It is installed so as to reach the height.
【００１８】このように構成された本発明による低圧化
学蒸着装置によりウェーハＷに化合物薄膜を蒸着する過
程を説明する。先ず、図１に示すように、複数のウェー
ハＷが搭載されたボート５０を反応炉２０の蒸着反応空
間Ｓ内に挿入し開閉板３０を閉じてローディングを完了
した後、真空装置（図示せず）及び加熱手段７０により
反応炉２０の内部真空度と温度を蒸着工程に適するよう
に維持する状態で化合物ソースガスを供給管１１を通じ
て供給すると、化合物ソースガスは供給管１１に連結さ
れた注入器６０を通じて上昇する。化合物ソースガスは
注入器６０内で上昇する間にはウェーハＷに接触しな
く、注入器６０の上端に至るまで加熱手段７０により十
分に予熱及び混合されてから蒸着反応空間Ｓ内に噴出さ
れ、ボート５０に搭載されたウェーハＷに接触しながら
熱分解及び反応してウェーハＷ上に望む薄膜として蒸着
される。A process of depositing a compound thin film on the wafer W by the low pressure chemical vapor deposition apparatus according to the present invention having the above structure will be described. First, as shown in FIG. 1, a boat 50 on which a plurality of wafers W are mounted is inserted into the vapor deposition reaction space S of the reaction furnace 20 and the opening / closing plate 30 is closed to complete loading, and then a vacuum device (not shown). ) And heating means 70 to supply the compound source gas through the supply pipe 11 while maintaining the internal vacuum degree and temperature of the reaction furnace 20 suitable for the deposition process, the compound source gas is injected into the injector. Rise through 60. The compound source gas does not come into contact with the wafer W while rising in the injector 60, is sufficiently preheated and mixed by the heating means 70 up to the upper end of the injector 60, and is then jetted into the deposition reaction space S. While contacting the wafer W mounted on the boat 50, the wafer W is thermally decomposed and reacted to be deposited as a desired thin film on the wafer W.
【００１９】このような蒸着過程により生成される反応
生成物等は真空装置（図示せず）の吸入力により石英管
２１の上端部から矢印方向に回流し、石英管２１の下端
でこれに連通された蒸着機ベース１０の排出管１２を通
じて外部へ排出される。この際に、化合物ソースガス供
給管１１を通じて注入された化合物ソースガスは反応炉
２０の石英管２１の一側に設置された注入器６０を通じ
て注入されて石英管２１の上端部に至る過程で混合され
ながらボート５０の最上端に位置するウェーハＷに接触
される前に十分に混合されるとともに注入器６０を通過
する間に石英管２１の周囲に設置された反応炉加熱手段
７０により十分に予熱されるのでボート５０の最上端に
位置するウェーハＷにも安定した薄膜が蒸着され、これ
によりパーティクル等の汚染が発生しなく、最上端に位
置するウェーハＷにも十分に混合及び予熱された化合物
ソースガスが接触するとともに化合物ソースガスが上部
から下部に下降流動しながら各ウェーハＷに接触するの
で、蒸着反応空間Ｓの上部と下部等の全領域での熱効率
が均一になるので、ウェーハＷを搭載して工程を進行し
得る領域が拡大され、ドーピングが均一になって均一な
膜質及び厚さを得ることができるとともに薄膜蒸着温度
を低めて薄膜の成長速度を向上させることができて工程
時間を２０％以上短縮し得ることになる。Reaction products and the like produced by such a vapor deposition process are circulated in the direction of the arrow from the upper end of the quartz tube 21 by the suction force of a vacuum device (not shown), and communicate with the lower end of the quartz tube 21. It is discharged to the outside through the discharge pipe 12 of the vapor deposition machine base 10. At this time, the compound source gas injected through the compound source gas supply pipe 11 is injected through an injector 60 installed on one side of the quartz tube 21 of the reaction furnace 20 and mixed in the process of reaching the upper end of the quartz tube 21. While being sufficiently mixed before being brought into contact with the wafer W located at the uppermost end of the boat 50, it is sufficiently preheated by the reactor heating means 70 installed around the quartz tube 21 while passing through the injector 60. As a result, a stable thin film is vapor-deposited on the wafer W located at the uppermost end of the boat 50, whereby contamination such as particles does not occur, and the wafer W located at the uppermost end is sufficiently mixed and preheated. Since the source gas comes into contact with the compound source gas and comes into contact with each wafer W while flowing downward from the upper part to the lower part, the entire area of the upper and lower parts of the deposition reaction space S and the like. Since the thermal efficiency in the process is uniform, the region where the process can be advanced by mounting the wafer W is expanded, the doping is uniform, and the uniform film quality and thickness can be obtained. The growth rate can be improved and the process time can be shortened by 20% or more.
【００２０】又、化合物ソースガスが注入器６０を通じ
て供給される過程において、反応炉加熱手段７０の熱が
石英管２１を介在して直接伝達されるので予熱及び加熱
効果が向上して反応炉２０内部の温度を適宜な温度に加
熱及び維持させるのに所要される電力を節減することが
でき、温度調節が容易になる。Further, in the process of supplying the compound source gas through the injector 60, the heat of the reactor heating means 70 is directly transferred through the quartz tube 21, so that the preheating and heating effects are improved and the reactor 20 is improved. The electric power required to heat and maintain the internal temperature to an appropriate temperature can be saved, and the temperature control becomes easy.
【００２１】一方、図２に示すように、開閉板３０を開
放し、ウェーハＷ及びボート５０を反応炉２０から分離
した状態で、ウェーハＷの自然酸化を防止するために不
活性ガスであるＮ2 ガスを注入する過程でＮ2 ガスを供
給管１１を通じて注入すると、化合物ソースガスを注入
する過程と同様に注入器６０を通じて石英管２１の上端
に上昇してから石英管２１の内部を通じて下部に下降流
動し、その下端で排出口１２に排出されながら下降気流
が形成されるので、開放された下部側から酸素が流入さ
れなくてウェーハＷ上に不必要な酸化膜が形成されな
く、これにより不良率を大幅減らすことができるように
なる。On the other hand, as shown in FIG. 2, with the opening / closing plate 30 opened and the wafer W and the boat 50 separated from the reaction furnace 20, an inert gas, N, is used to prevent the natural oxidation of the wafer W. When N 2 gas is injected through the supply pipe 11 in the process of injecting 2 gas, it rises to the upper end of the quartz pipe 21 through the injector 60 and then to the lower portion through the inside of the quartz pipe 21 as in the process of injecting the compound source gas. A downward flow is formed while flowing downward and being discharged to the discharge port 12 at the lower end thereof, so that oxygen is not introduced from the open lower side and an unnecessary oxide film is not formed on the wafer W. The defect rate can be greatly reduced.
【００２２】図３は前記反応炉２０の変形例を示すもの
で、ここでは反応炉２０を構成する石英管２１を蒸着機
ベース１０に安着し得るように大直径の下端結合部２２
と、前記下端結合部２２より小さい直径を有し上向に延
長形成された反応室部２３とから構成することにより、
反応室部２３の内壁とボート５０に搭載されたウェーハ
Ｓ間の間隔を減らして化合物ソースガスの接触がより円
滑になるようにしたものである。即ち、低圧化学蒸着工
程中にはＨＴＯ(high temperature oxide deposition)
工程のように薄膜の厚さ均一度(uniformity)がボート５
０と石英間２１の周壁間の距離に敏感に依存する工程が
あるもので、本例においては反応室部２３の内径を減ら
したため厚さ均一度が優秀な薄膜を蒸着できるようにな
る。FIG. 3 shows a modified example of the reaction furnace 20. Here, a large-diameter lower end connecting portion 22 so that the quartz tube 21 constituting the reaction furnace 20 can be seated on the vapor deposition machine base 10.
And a reaction chamber portion 23 having a diameter smaller than that of the lower end coupling portion 22 and extending upwardly,
The gap between the inner wall of the reaction chamber portion 23 and the wafer S mounted on the boat 50 is reduced to make the contact of the compound source gas smoother. That is, during the low pressure chemical vapor deposition process, HTO (high temperature oxide deposition)
As in the process, the thickness uniformity of the thin film is
Since there is a process which depends on the distance between the peripheral wall of 0 and quartz 21 and the inner diameter of the reaction chamber 23 is reduced in this example, a thin film having excellent thickness uniformity can be deposited.
【００２３】図４は前記反応炉２０のさらに他の変形例
を示す横断面図で、ここでは反応炉２０を構成する石英
管２１の一側周壁に注入器６０が挿入される溝２４を形
成して蒸着反応空間Ｓ内で注入器６０が化合物ソースガ
スの循環に影響を及ぼさないようにすることにより蒸着
反応がより円滑になるようにしたものである。FIG. 4 is a cross-sectional view showing still another modified example of the reaction furnace 20, in which a groove 24 into which the injector 60 is inserted is formed on one side wall of the quartz tube 21 constituting the reaction furnace 20. Then, the injector 60 does not affect the circulation of the compound source gas in the vapor deposition reaction space S so that the vapor deposition reaction becomes smoother.
【００２４】図５（Ａ）及び図５（Ｂ）は前記蒸着防止
リング３１の変形例を示すもので、ここでは円筒形本体
３２の底面にフランジ部３３と同一平面をなす底板３４
を一体的に形成し、その底板３４の中心にラム４０が貫
通されるラム貫通孔３５を穿孔することにより、ラム４
０の昇降動作に支障がなく開閉板３０上に薄膜が蒸着さ
れることをより確かに防止し得るようにしたものであ
る。これらの図３〜図５の変形例のその他の部分の構成
及び作用効果は前述した実施例と同一であるので、同一
部分に対しては同一符号を付け、具体的説明は省略す
る。5 (A) and 5 (B) show a modified example of the vapor deposition prevention ring 31, in which a bottom plate 34 which is flush with the flange 33 on the bottom surface of the cylindrical body 32 is shown.
Is integrally formed, and a ram through hole 35 through which the ram 40 penetrates is formed at the center of the bottom plate 34 of the ram 4.
It is possible to surely prevent the thin film from being deposited on the opening / closing plate 30 without hindrance to the lifting operation of 0. The configuration and operation and effect of the other parts of the modified examples of FIGS. 3 to 5 are the same as those of the above-described embodiment, and therefore, the same parts are designated by the same reference numerals and detailed description thereof will be omitted.
【００２５】図６及び図７は本発明による他の実施例を
示すもので、反応炉２０を構成する石英管２１を大直径
の下端結合部２２と該下端結合部２２から上方に延長形
成される小直径の反応室部２３とから構成し、その下端
結合部２２の一側上端部と反応室部２３の上端一側壁に
それぞれ通孔２２ａ，２３ａを穿孔し、この通孔２２
ａ，２３ａを化合物ソースガス通路管２５で連結し、こ
の通路管２５内に前記注入器６０を挿入設置したもので
ある。FIGS. 6 and 7 show another embodiment according to the present invention, in which a quartz tube 21 constituting the reaction furnace 20 is formed by a large diameter lower end joint 22 and extending upward from the lower end joint 22. And a reaction chamber portion 23 having a small diameter, and through holes 22a and 23a are formed in one upper end portion of the lower end coupling portion 22 and one upper end side wall of the reaction chamber portion 23, respectively.
a and 23a are connected by a compound source gas passage pipe 25, and the injector 60 is inserted and installed in the passage pipe 25.
【００２６】図６では通路管２５の上端が連結される通
孔２３ａがローディングされたボート５０の上端の高さ
とおおよそ同じ高さに穿孔されて、注入器６０から噴出
される化合物ソースガスがボート５０の上端と同一高さ
で噴出されるようにしたものであり、図７では通路管２
５の上端が連結される通孔２３ａが石英管２１の最上端
に穿孔されて、注入器６０から噴出される化合物ソース
ガスがボート５０の上端より高い位置で噴出されるよう
にしたもので、その他の部分の構成及び作動は前述した
実施例と同一であるので同一部分には同一符号を付け、
具体的説明は省略する。特に、本実施例においては、石
英管２１の内壁とボート５０間の距離を減らすことがで
きるので薄膜厚さの均一度が向上し、特にＨＴＯのよう
に厚さ均一度を維持しにくい工程に有利である。又、注
入器６０が石英管２１の外周に一体形で結合されて化合
物ソースガスが十分に予熱及び混合されるので蒸着され
る薄膜の特性が優秀になり組成の均一な膜質の薄膜を蒸
着し得ることになる。In FIG. 6, the through hole 23a to which the upper end of the passage pipe 25 is connected is bored at a height approximately the same as the height of the upper end of the loaded boat 50, and the compound source gas ejected from the injector 60 is injected into the boat. It is designed to be jetted at the same height as the upper end of 50, and in FIG.
A through hole 23a to which the upper end of 5 is connected is bored in the uppermost end of the quartz tube 21 so that the compound source gas ejected from the injector 60 is ejected at a position higher than the upper end of the boat 50. Since the configuration and operation of the other parts are the same as those of the above-described embodiment, the same parts are designated by the same reference numerals,
Detailed description is omitted. Particularly, in the present embodiment, the distance between the inner wall of the quartz tube 21 and the boat 50 can be reduced, so that the uniformity of the thin film thickness is improved, and particularly in the process where it is difficult to maintain the uniformity of thickness like HTO. It is advantageous. In addition, since the injector 60 is integrally connected to the outer circumference of the quartz tube 21 and the compound source gas is sufficiently preheated and mixed, the characteristics of the deposited thin film are excellent and a thin film having a uniform composition is deposited. You will get it.
【００２７】図８及び図９は前記注入器６０の変形例を
示すもので、注入器６０は石英管２１の一側又は通路管
２５内に挿入される垂直形注入管６１と、この注入管６
１と前記化合物ソースガス供給管１１とを連結する導入
管６１とから構成され、注入器６０を蒸着機ベース１０
に固定設置するとともに石英管２１内に挿入設置するこ
とが簡便になるようにしたものである。前記垂直形注入
管６１は単純な直線形に形成され、導入管６２は短い垂
直部６２ａと供給管１１に連結される水平部６２ｂとか
ら構成され、図８の例においては、導入管６２の垂直部
６２ａの注入管６１の下端に内挿されるものであり、図
９の例においては、導入管６２の垂直部６２ａが注入管
６１の下端に外挿されるものである。8 and 9 show a modification of the injector 60. The injector 60 is a vertical injection pipe 61 inserted into one side of the quartz tube 21 or the passage tube 25, and this injection tube 61. 6
1 and an introduction pipe 61 connecting the compound source gas supply pipe 11 to each other.
In addition to being fixedly installed in the quartz tube 21, it can be easily inserted and installed in the quartz tube 21. The vertical injection pipe 61 is formed in a simple linear shape, and the introduction pipe 62 is composed of a short vertical portion 62a and a horizontal portion 62b connected to the supply pipe 11. In the example of FIG. The vertical portion 62a is inserted into the lower end of the injection pipe 61, and in the example of FIG. 9, the vertical portion 62a of the introduction pipe 62 is externally inserted into the lower end of the injection pipe 61.
【００２８】図１０は本発明のさらに他の実施例を示す
もので、反応炉２０が上下部が開放された内部石英管２
６と、この内部石英管２６を取り囲み下端が開放され上
端が塞がった外部石英管２７とから構成され、内外部石
英管２６、２７間に前記化合物ソースガス供給管１１に
連通される化合物ソースガス注入路２８が形成され、こ
の化合物ソースガス注入路２８の上端は内部石英管２６
により限定される蒸着反応空間Ｓに連通され、その下端
は蒸着機ベース１０の内周面に沿って突出形成され内部
石英管２６の下端を支える支持片１３により密閉され
て、化合物ソースガス供給管１１から供給される化合物
ソースガスが化合物ソースガス注入路２８を通じて内部
石英管２６の上端から蒸着反応空間Ｓ内に注入されるよ
うにしたものである。FIG. 10 shows still another embodiment of the present invention, in which the reaction furnace 20 has an inner quartz tube 2 whose upper and lower parts are open.
6 and an outer quartz tube 27 surrounding the inner quartz tube 26 and having an open lower end and a closed upper end, and a compound source gas communicating with the compound source gas supply pipe 11 between the inner and outer quartz tubes 26, 27. An injection path 28 is formed, and the upper end of the compound source gas injection path 28 has an inner quartz tube 26.
Is connected to the vapor deposition reaction space S, and the lower end thereof is formed so as to project along the inner peripheral surface of the vapor deposition machine base 10 and is closed by a support piece 13 that supports the lower end of the internal quartz tube 26, and a compound source gas supply pipe The compound source gas supplied from No. 11 is injected into the vapor deposition reaction space S from the upper end of the internal quartz tube 26 through the compound source gas injection passage 28.
【００２９】前記内部石英管２６の下端を支える支持片
１３は化合物ソースガス供給管１１の位置よりは下側に
かつ排出管１２よりは上側に位置して、内部石英管２６
の下端が化合物ソースガス供給管１１よりは低く排出管
１２よりは高く位置するように設置される。外部石英管
２７の外周面の下端側には掛止突起２７ａが突出形成さ
れ、蒸着設備本体８０には側方にスライド可能に設置さ
れて掛止突起２７ａを支えるようにしたスライド支持片
８１が備えられている。The support piece 13 for supporting the lower end of the internal quartz tube 26 is located below the position of the compound source gas supply tube 11 and above the discharge tube 12, and the internal quartz tube 26
Is installed so that its lower end is lower than the compound source gas supply pipe 11 and higher than the discharge pipe 12. A latching protrusion 27a is formed on the lower end side of the outer peripheral surface of the outer quartz tube 27, and a slide support piece 81 is slidably installed laterally on the vapor deposition equipment body 80 to support the latching protrusion 27a. It is equipped.
【００３０】前記掛止突起２７ａは環状帯形に形成され
るか二つ以上の突起に形成され、前記スライド支持片８
１は“フ”字形又は“レ”字形に形成され蒸着設備本体
８０に形成された案内溝８２内で内外側にスライド移動
可能に設置され、手動式に移動されるか又は動力例えば
空気圧又は油圧シリンダー又はソレノイド又はモーター
等を用いてスライド移動されるようになっている。前記
ボート５０はボート支持板４１の上面にボート支持部５
１を介して装着され、このボート支持部５１には複数の
通孔５１ａが穿孔される。前記通孔５１ａは２〜１０程
度に穿孔することが望ましい。The hooking protrusion 27a is formed in an annular band shape or in two or more protrusions.
Reference numeral 1 denotes a "F" shape or a "L" shape, which is slidably installed inward and outward in a guide groove 82 formed in the vapor deposition equipment body 80, and is manually moved or powered, for example, pneumatic or hydraulic. It can be slid using a cylinder, a solenoid, a motor, or the like. The boat 50 is mounted on the upper surface of the boat supporting plate 41 by the boat supporting portion 5.
The boat supporting portion 51 is provided with a plurality of through holes 51a. It is desirable that the through holes 51a be formed in about 2 to 10.
【００３１】本実施例において、前述した実施例と同一
部分には同一符号を付け、これに関する具体的構成及び
作用効果の説明は省略し、以下では本実施例の特徴的作
用効果に関して説明する。図１０に示すように、複数の
ウェーハＷが搭載されたボート５０を反応炉２０の蒸着
反応空間Ｓ内に挿入し開閉板３０を閉じてローディング
を完了した後、真空装置（図示せず）及び加熱手段７０
により反応炉２０の内部真空度及び温度を蒸着工程に適
するように維持する状態で化合物ソースガス供給管１１
を通じて供給すると、化合物ソースガス供給管１１に連
結された注入路２８を通じて上方に上昇する。化合物ソ
ースガスは注入路２８内で上昇する間にはウェーハＷに
接触しなく、注入路２８の上端に至るまで加熱手段７０
により十分に予熱及び混合された後に蒸着反応空間Ｓ内
に噴出されボート５０に搭載されたウェーハＷに接触し
ながら熱分解及び反応してウェーハＷ上に望む薄膜とし
て蒸着される。In the present embodiment, the same parts as those in the above-mentioned embodiment are designated by the same reference numerals, and the explanation of the concrete constitution and the effect thereof will be omitted. Below, the characteristic effect of the present embodiment will be explained. As shown in FIG. 10, after inserting the boat 50 on which a plurality of wafers W are mounted into the vapor deposition reaction space S of the reaction furnace 20 and closing the opening / closing plate 30 to complete loading, a vacuum device (not shown) and Heating means 70
The compound source gas supply pipe 11 while maintaining the internal vacuum degree and temperature of the reaction furnace 20 suitable for the deposition process.
When it is supplied through the injection path 28, it rises upward through the injection path 28 connected to the compound source gas supply pipe 11. The compound source gas does not come into contact with the wafer W while rising in the injection path 28, and the heating means 70 reaches the upper end of the injection path 28.
After being sufficiently preheated and mixed by the above method, it is sprayed into the vapor deposition reaction space S and thermally decomposes and reacts while contacting the wafer W mounted on the boat 50 to deposit a desired thin film on the wafer W.
【００３２】このような蒸着過程により生成される反応
生成物等は真空装置（図示せず）の吸入力により反応炉
２０の上端部から内部石英管２６の内部である蒸着反応
空間Ｓを経て、内部石英管２６の下端に連通された蒸着
機ベース１０の排出管１２に排出される。この際に、化
合物ソースガス供給管１１を通じて注入された化合物ソ
ースガスは反応炉２０の内外部石英管２６、２７間に設
置された注入路２８を通じて注入され外部石英管２７の
上端部に至るまで混合されながらボート５０の最上端に
位置するウェーハＷに接触する前に十分に混合されると
ともに注入路２８を通過する間に外部石英管２７の周囲
に設置された反応炉加熱手段７０により十分に予熱され
るのでボート５０の最上端に位置するウェーハＷにも安
定した薄膜が蒸着され、これによりパーティクル等の汚
染が発生しなく、最上端に位置するウェーハにも十分に
混合及び予熱された化合物ソースガスが接触するととも
にこの化合物ソースガスが上部から下部に下降流動しな
がら各ウェーハＷに接触するので蒸着反応空間Ｓの上部
と下部の全領域での熱効率が均一になってウェーハＷを
搭載して工程を進行させ得る領域が拡大され、ドーピン
グが均一になって均一な膜質及び厚さを得ることがで
き、薄膜蒸着温度を低めることができ、薄膜の成長速度
を向上させることができて、工程時間を２０％以上短縮
し得ることになる。The reaction products and the like generated by the vapor deposition process are sucked by a vacuum device (not shown) from the upper end of the reaction furnace 20 to the vapor deposition reaction space S inside the inner quartz tube 26, It is discharged to the discharge pipe 12 of the vapor deposition machine base 10 connected to the lower end of the internal quartz pipe 26. At this time, the compound source gas injected through the compound source gas supply pipe 11 is injected through an injection passage 28 installed between the inner and outer quartz tubes 26 and 27 of the reaction furnace 20 and reaches the upper end of the outer quartz tube 27. While being mixed, it is sufficiently mixed before contacting the wafer W located at the uppermost end of the boat 50 and is sufficiently mixed by the reactor heating means 70 installed around the outer quartz tube 27 while passing through the injection path 28. Since it is preheated, a stable thin film is vapor-deposited on the wafer W located at the uppermost end of the boat 50, so that contamination such as particles does not occur, and the wafer located at the uppermost end is sufficiently mixed and preheated. Since the source gas comes into contact with each other and the compound source gas comes into contact with each wafer W while flowing downward from the upper portion to the lower portion, the upper and lower portions of the deposition reaction space S are , The thermal efficiency is uniform in all areas, the area in which the wafer W can be mounted and the process can be advanced is expanded, the doping is uniform, uniform film quality and thickness can be obtained, and the thin film deposition temperature is lowered. Therefore, the growth rate of the thin film can be improved, and the process time can be shortened by 20% or more.
【００３３】又、化合物ソースガスが注入路２８を通じ
て供給される過程で反応炉加熱手段７０の熱が外部石英
管２７のみを介在して直接伝達されるので、予熱及び加
熱効果が向上して反応炉２０の内部の温度を適正温度に
加熱及び維持させるのに所要される電力を節減でき、温
度調節が容易である。Further, since the heat of the reactor heating means 70 is directly transferred through only the outer quartz tube 27 during the process of supplying the compound source gas through the injection path 28, the preheating and heating effects are improved and the reaction is performed. Electric power required to heat and maintain the internal temperature of the furnace 20 at an appropriate temperature can be saved, and the temperature can be easily adjusted.
【００３４】一方、図１１に示すように、開閉板３０を
開放しウェーハＷ及びボート５０を反応炉２０から分離
した状態でウェーハＷの自然酸化を防止するために不活
性ガスであるＮ2 ガスを注入する過程でＮ2 ガスを供給
管１１を通じて注入すると、化合物ソースガスを注入す
る過程と同様に注入路２８を通じて外部石英管２７の上
端に上昇してから内部石英管２６の内部を通じて下部に
下降流動し、その下端で排出口１２に排出されながら下
向気流が形成されるので、開放された下部側から酸素が
流入されなくてウェーハＷ上に不必要な酸化膜が形成さ
れなく、これにより不良率を大きく減らすことができる
ことになる。On the other hand, as shown in FIG. 11, with the opening / closing plate 30 opened and the wafer W and the boat 50 separated from the reaction furnace 20, N 2 gas, which is an inert gas, is used to prevent natural oxidation of the wafer W. When N 2 gas is injected through the supply pipe 11 in the process of injecting the gas, as in the process of injecting the compound source gas, it rises to the upper end of the outer quartz pipe 27 through the injection passage 28 and then to the lower part through the inner quartz pipe 26. Since the downward flow is formed while flowing downward and being discharged to the discharge port 12 at the lower end thereof, unnecessary oxygen film is not formed on the wafer W because oxygen does not flow from the opened lower side. Therefore, the defect rate can be greatly reduced.
【００３５】又、蒸着過程で内外部石英管２６，２７に
化合物薄膜が蒸着されるため洗浄するか交替するために
内外部石英管２６，２７を分離することにおいては、開
閉板３０を完全に下降させラム４０の上端に形成された
ボート支持板４１からボート５０を分離した後、図１４
に示すように、開閉板３０を上昇させて蒸着機ベース１
０が開閉板３０により支持されるようにし、固定ボルト
１４を解いて蒸着機ベース１０を蒸着設備本体８０から
分離すると、蒸着機ベース１０は開閉板３０だけにより
支持される状態になり、この状態で開閉板３０を下降さ
せると外部石英管２７が蒸着機ベース１０とともに下降
し、この際に、図１２に示すように蒸着設備本体８０に
スライド可能に設置されたスライド支持片８１を内方に
移動させ開閉板３０を徐々に下降させると、図１３に示
すように外部石英管２７はその掛止突起２７ａがスライ
ド支持片８１に掛かってその以上に下降されなく内部石
英管２６だけが下降され、内部石英管２６が外部石英管
２７から完全に抜き出されると内部石英管２６を分離す
る。Also, since the compound thin film is deposited on the inner and outer quartz tubes 26 and 27 during the deposition process, the opening and closing plate 30 is completely removed when the inner and outer quartz tubes 26 and 27 are separated for cleaning or replacement. After the boat 50 is separated from the boat support plate 41 formed on the upper end of the ram 40 by descending, as shown in FIG.
As shown in FIG.
When 0 is supported by the opening / closing plate 30 and the fixing bolt 14 is unfastened to separate the vapor deposition machine base 10 from the vapor deposition equipment main body 80, the vapor deposition machine base 10 is supported only by the opening / closing plate 30. When the opening / closing plate 30 is lowered with, the outer quartz tube 27 is lowered together with the vapor deposition machine base 10, and at this time, as shown in FIG. 12, the slide support piece 81 slidably installed on the vapor deposition equipment main body 80 is moved inward. When the opening / closing plate 30 is moved and gradually lowered, as shown in FIG. 13, the latch protrusions 27a of the outer quartz tube 27 are hooked on the slide support pieces 81, and the inner quartz tube 26 is lowered. When the inner quartz tube 26 is completely extracted from the outer quartz tube 27, the inner quartz tube 26 is separated.
【００３６】内部石英管２６を分離した後、図１４に示
すように再び開閉板３０を上昇させて外部石英管２７の
掛止突起２７ａがスライド支持片８１から少し離脱され
るようにし、図１５に示すようにスライド支持片８１を
外方に移動させると外部石英管２７が蒸着設備本体８０
から分離されて蒸着機ベース１０に安着される。この状
態で開閉板３０を徐々に下降させると、図１６に示すよ
うに外部石英管２７は蒸着機ベース１０を通じて開閉板
３０に安着された状態で下降し、外部石英管２７がその
周囲に設置された加熱手段７０から完全に外れると外部
石英管２７を分離することにより内外部石英管２６，２
７の分離作業が完了される。内外部石英管２６，２７の
組立は前述した分離過程の逆順になる。従って、本発明
では内外部石英管２６，２７の洗浄及び交替のための分
離及び組立作業が簡便になる。After separating the inner quartz tube 26, the opening / closing plate 30 is raised again as shown in FIG. 14 so that the latching protrusion 27a of the outer quartz tube 27 is slightly separated from the slide support piece 81. When the slide supporting piece 81 is moved outward as shown in FIG.
And is mounted on the vapor deposition machine base 10. When the opening / closing plate 30 is gradually lowered in this state, the outer quartz tube 27 is lowered while being seated on the opening / closing plate 30 through the vapor deposition machine base 10 as shown in FIG. The inner and outer quartz tubes 26, 2 are separated by separating the outer quartz tube 27 when completely removed from the installed heating means 70.
The separation work of 7 is completed. The inner and outer quartz tubes 26 and 27 are assembled in the reverse order of the above-described separation process. Therefore, according to the present invention, the separation and assembly work for cleaning and replacing the inner and outer quartz tubes 26, 27 becomes simple.
【００３７】図１７は本発明にさらに他の実施例を示す
もので、化合物ソースガス供給管１１を内外部供給管１
１ａ，１１ｂの二重管に形成するとともに、図１０〜図
１６の実施例の化合物ソースガス注入炉２８内に内部供
給管１１が連結され上端が加熱手段７０の下端に一致す
るように設置された内部注入管６３と前記外部供給管１
１に連結されて前記内部注入管６３の周囲を取り囲む外
部注入管６４とからなる注入器６０を内装設置すること
により、二種の化合物ソースガスを注入する場合に、こ
の二種の化合物ソースガスが工程適正温度を維持しない
内部注入管６３の上端位置に至る低温領域では混合され
なく、工程適正温度を維持する内部注入管６３の上端位
置以上の工程適正温度領域では混合されるようにしてパ
ーティクルの発生を防止して望む膜質の薄膜を蒸着し得
るようにしたものである。FIG. 17 shows still another embodiment of the present invention, in which the compound source gas supply pipe 11 is connected to the inner / outer supply pipe 1.
1a and 11b are formed in a double pipe, and the internal supply pipe 11 is connected to the inside of the compound source gas injection furnace 28 of the embodiment shown in FIGS. 10 to 16 and installed so that the upper end thereof coincides with the lower end of the heating means 70. Internal injection pipe 63 and the external supply pipe 1
In the case of injecting two kinds of compound source gas by internally installing an injector 60 composed of an outer injection tube 64 connected to 1 and surrounding the inner injection tube 63, the two kinds of compound source gas Are not mixed in the low temperature region reaching the upper end position of the internal injection pipe 63 where the proper process temperature is not maintained, and are mixed in the proper process temperature region above the upper end position of the internal injection pipe 63 where the proper process temperature is maintained. It is possible to vapor-deposit a thin film having a desired film quality by preventing the occurrence of.
【００３８】前記外部注入管６４は、図１８に示すよう
に蒸着機ベース１０の内壁に固定されたホルダー６５に
より遊動されないように固定設置することにより工程中
に注入器６０を構成する内外部注入管６３，６４が振動
しながらパーティクルを発生させないようにしている。
前記ホルダー６５は蒸着機ベース１０の内壁に固定され
る固定棒６６と、前記固定棒６６が挿入され周面にセッ
トスクリュー６７が締結された挿入管部６８と、この挿
入管部６８の先端に形成された注入管挿入溝６９ａを有
する把持部６９とから構成される。As shown in FIG. 18, the external injection pipe 64 is fixedly installed so as not to be loosened by a holder 65 fixed to the inner wall of the vapor deposition machine base 10 to form the injector 60 during the process. The tubes 63 and 64 vibrate so as not to generate particles.
The holder 65 includes a fixing rod 66 fixed to an inner wall of the vapor deposition machine base 10, an insertion pipe portion 68 into which the fixing rod 66 is inserted and a set screw 67 is fastened to a peripheral surface thereof, and a tip of the insertion pipe portion 68. It is composed of a grip portion 69 having the formed injection tube insertion groove 69a.
【００３９】前記固定棒６６はその端部に形成されたネ
ジ部６６ａを蒸着機ベース１０の内壁に形成されたネジ
溝１５に締結することにより蒸着機ベース１０に固定設
置され前記挿入管部６８に挿入され、この挿入管部６８
に締結されたセットスクリュー６７を締結して締めるこ
とにより挿入管部６８と把持部６９が固定棒６６を通じ
て蒸着機ベース１０の内壁に固定される。又、ホルダー
６５は挿入管部６８を固定棒６６に対して反応炉２０の
半径方向に移動させて蒸着機ベース１０の内壁からの突
出高さを調節してからセットスクリュー６７を締結する
ことにより注入器６０を適宜な位置に固定支持すること
ができる。The fixing rod 66 is fixedly installed on the vapor deposition machine base 10 by fastening a threaded portion 66a formed on the end thereof to the thread groove 15 formed on the inner wall of the vapor deposition machine base 10, and the insertion tube portion 68 is provided. Is inserted into the insertion tube portion 68
By inserting and tightening the set screw 67, the insertion tube portion 68 and the grip portion 69 are fixed to the inner wall of the vapor deposition machine base 10 through the fixing rod 66. Further, the holder 65 moves the insertion pipe portion 68 in the radial direction of the reaction furnace 20 with respect to the fixed rod 66 to adjust the protruding height from the inner wall of the vapor deposition machine base 10, and then fastens the set screw 67. The injector 60 can be fixedly supported at an appropriate position.
【００４０】[0040]
【発明の効果】以上説明したように、本発明によると、
反応炉を構成する内外部石英管の間に化合物ソースガス
供給路を形成して化合物ソースガスがウェーハを搭載し
たボートの上部から下部に下降供給されるようにするこ
とにより、これらの化合物ソースガスを十分に混合及び
予熱された状態で蒸着反応空間に注入して均一膜質及び
厚さの化合物薄膜を得ることができ、Ｎ2 を用いる洗浄
時に周囲の酸素が混入されなくて不必要な酸化膜が形成
されることによる不良率を極小化することができ、内外
部石英管の洗浄又は交替時に簡便に分離及び再組立で
き、生産費節減及び大量生産に有利に適用できる。As described above, according to the present invention,
By forming a compound source gas supply path between the inner and outer quartz tubes forming the reaction furnace so that the compound source gas is supplied downward from the upper part to the lower part of the boat on which the wafer is mounted, these compound source gas are supplied. Can be injected into the vapor deposition reaction space in a state of being sufficiently mixed and preheated to obtain a compound thin film having a uniform film quality and a thickness, and an unnecessary oxide film can be obtained because ambient oxygen is not mixed in at the time of cleaning using N 2. It is possible to minimize the defect rate due to the formation of the above, and to easily separate and reassemble the inner and outer quartz tubes when cleaning or replacing the inner and outer quartz tubes, which is advantageous in reducing production costs and mass production.
【図１】本発明の一実施例による低圧化学蒸着装置の蒸
着工程進行状態を示す縦断面図である。FIG. 1 is a vertical cross-sectional view showing a state of progress of a vapor deposition process of a low pressure chemical vapor deposition apparatus according to an embodiment of the present invention.
【図２】本発明の一実施例による低圧化学蒸着装置のボ
ート分離状態を示す縦断面図である。FIG. 2 is a vertical cross-sectional view showing a boat separated state of a low pressure chemical vapor deposition apparatus according to an embodiment of the present invention.
【図３】本発明による反応炉の変形例を示す縦断面図で
ある。FIG. 3 is a vertical sectional view showing a modified example of the reaction furnace according to the present invention.
【図４】本発明による反応炉の変形例を示す縦断面図で
ある。FIG. 4 is a vertical sectional view showing a modified example of the reaction furnace according to the present invention.
【図５】（Ａ）は本発明の蒸着防止リングの変形例を示
す平面図である。（Ｂ）は本発明の蒸着防止リングの変
形例を示す縦断面図である。FIG. 5A is a plan view showing a modified example of the vapor deposition prevention ring of the present invention. (B) is a longitudinal sectional view showing a modified example of the vapor deposition prevention ring of the present invention.
【図６】本発明の他の実施例を示す縦断面図である。FIG. 6 is a vertical sectional view showing another embodiment of the present invention.
【図７】本発明の他の実施例を示す縦断面図である。FIG. 7 is a vertical sectional view showing another embodiment of the present invention.
【図８】本発明の注入器の変形例を示す断面図である。FIG. 8 is a sectional view showing a modified example of the injector of the present invention.
【図９】本発明の注入器の変形例を示す断面図である。FIG. 9 is a sectional view showing a modified example of the injector of the present invention.
【図１０】本発明のさらに他の実施例による低圧化学蒸
着装置の縦断面図である。FIG. 10 is a vertical cross-sectional view of a low pressure chemical vapor deposition apparatus according to still another embodiment of the present invention.
【図１１】図１０において、ボート分離状態を示す縦断
面図である。FIG. 11 is a vertical cross-sectional view showing a boat separated state in FIG.
【図１２】図１０の実施例の作動を示す縦断面図であ
る。12 is a vertical sectional view showing the operation of the embodiment of FIG.
【図１３】図１０の実施例の作動を示す縦断面図であ
る。13 is a vertical cross-sectional view showing the operation of the embodiment of FIG.
【図１４】図１０の実施例の作動を示す縦断面図であ
る。14 is a vertical sectional view showing the operation of the embodiment of FIG.
【図１５】図１０の実施例の作動を示す縦断面図であ
る。15 is a vertical sectional view showing the operation of the embodiment of FIG.
【図１６】図１０の実施例の作動を示す縦断面図であ
る。16 is a vertical sectional view showing the operation of the embodiment of FIG.
【図１７】本発明のさらに他の実施例による低圧化学蒸
着装置を示す断面図である。FIG. 17 is a sectional view showing a low pressure chemical vapor deposition apparatus according to still another embodiment of the present invention.
【図１８】図１７の実施例に使用される注入器とホルダ
ーの結合状態を示す拡大断面図である。18 is an enlarged cross-sectional view showing a combined state of the injector and the holder used in the embodiment of FIG.
【図１９】従来の低圧化学蒸着装置の蒸着工程進行状態
を示す縦断面図である。FIG. 19 is a vertical sectional view showing a state of progress of a vapor deposition process of a conventional low pressure chemical vapor deposition apparatus.
【図２０】従来の低圧化学蒸着装置のボート分離状態を
示す縦断面図である。FIG. 20 is a vertical cross-sectional view showing a boat separated state of a conventional low pressure chemical vapor deposition apparatus.
１０ 蒸着機ベース １１ 化合物ソースガス供給管 １１ａ 内部供給管 １１ｂ 外部供給管 １２ 排出管 １３ 支持片 ２０ 反応炉 ２１ 石英管 ２２ 下端結合部 ２３ 反応室部 ２４ 溝 ２５ 通路管 ２６ 内部石英管 ２７ 外部石英管 ２７ａ 掛止突起 ２８ 注入路 ３０ 開閉板 ３１ 蒸着防止リング ３２ 円筒形本体 ３３ フランジ部 ３４ 底板 ３５ ラム貫通孔 ４０ ラム ４１ ボート支持板 ５０ ボート ５１ ボート支持部 ５１ａ 通孔 ６０ 注入器 ６１ 垂直形注入管 ６２ 導入管 ６２ａ 垂直部 ６２ｂ 水平部 ６３ 内部注入管 ６４ 外部注入管 ６５ ホルダー ６６ 固定棒 ６７ セットスクリュー ６８ 挿入管 ６９ 把持部 ７０ 加熱手段 ８０ 蒸着設備本体 ８１ スライド支持片 10 Evaporator base 11 Compound source gas supply pipe 11a Internal supply pipe 11b External supply pipe 12 Discharge pipe 13 Support piece 20 Reactor furnace 21 Quartz pipe 22 Lower end joint 23 Reaction chamber part 24 Groove 25 Passage pipe 26 Internal quartz pipe 27 External quartz Pipe 27a Hooking protrusion 28 Injection path 30 Opening plate 31 Evaporation prevention ring 32 Cylindrical body 33 Flange portion 34 Bottom plate 35 Ram through hole 40 Ram 41 Boat support plate 50 Boat 51 Boat support 51a Through hole 60 Injector 61 Vertical injection Pipe 62 Introduction pipe 62a Vertical part 62b Horizontal part 63 Internal injection pipe 64 External injection pipe 65 Holder 66 Fixing rod 67 Set screw 68 Insertion pipe 69 Gripping part 70 Heating means 80 Vapor deposition equipment main body 81 Slide support piece
Claims (11)
れ他側に排出管が設置された蒸着機ベースと、前記蒸着
機ベースに気密に結合される反応炉と、前記蒸着機ベー
スの下端開口部を開閉する開閉板と、前記開閉板を貫通
して昇降し上端にボート支持板が形成されたラムと、前
記ボート支持板上に安着され複数のウェーハが搭載され
るボートと、前記化合物ソースガス供給管に下端が連結
され上端はボートの上端に臨む注入器及び前記反応炉の
周囲に設置される反応炉加熱手段とから構成されること
を特徴とする低圧化学蒸着装置。1. A vapor deposition machine base having a compound source gas supply pipe on one side and a discharge pipe on the other side, a reaction furnace hermetically coupled to the vapor deposition machine base, and a lower end of the vapor deposition machine base. An opening / closing plate that opens and closes an opening, a ram that passes through the opening and closing plate and moves up and down to form a boat support plate at the upper end, a boat that is seated on the boat support plate and has a plurality of wafers mounted thereon, and A low pressure chemical vapor deposition apparatus comprising a compound source gas supply pipe, a lower end of which is connected to an upper end of a boat, and an upper end of which is connected to a compound source gas supply pipe, and a reactor heating means installed around the reactor.
有する単一石英管により構成されることを特徴とする請
求項１に記載の低圧化学蒸着装置。2. The low pressure chemical vapor deposition apparatus according to claim 1, wherein the reaction furnace is constituted by a single quartz tube having a uniform diameter over the entire length.
大直径の下端結合部と、前記下端結合部の上部に一体的
に形成される小直径の反応室部とから構成されることを
特徴とする請求項１に記載の低圧化学蒸着装置。3. The reaction furnace comprises a large-diameter lower end connecting part seated on a vapor deposition machine base, and a small-diameter reaction chamber part integrally formed on the upper end of the lower end connecting part. The low pressure chemical vapor deposition apparatus according to claim 1, wherein
室部の上端の一側壁とにそれぞれ通孔を穿孔し、この通
孔を化合物ソースガス通路管に連結しこの通路管内に前
記注入器を挿入設置することを特徴とする請求項３に記
載の低圧化学蒸着装置。4. A through hole is formed in each of an upper end portion of one side wall of the lower end coupling portion and an upper side wall of an upper end of the reaction chamber portion, and the through hole is connected to a compound source gas passage pipe. The low pressure chemical vapor deposition apparatus according to claim 3, wherein an injector is inserted and installed.
英管と、前記内部石英管を取り囲み下端が開放され上端
が塞がった外部石英管とから構成され、内外部石英管の
間には上端が内部石英管により限定される蒸着反応空間
に連通され下端が蒸着機ベースの内周面に沿って突出形
成されて内部石英管の下端を支える支持片により密閉さ
れた化合物ソースガス注入路が形成されることを特徴と
する請求項１に記載の低圧化学蒸着装置。5. The reactor comprises an inner quartz tube whose upper and lower parts are opened, and an outer quartz tube which surrounds the inner quartz tube and whose lower end is open and whose upper end is closed. The compound source gas injection path is closed by a support piece whose upper end communicates with the vapor deposition reaction space defined by the internal quartz tube and whose lower end projects along the inner peripheral surface of the vaporizer base to support the lower end of the internal quartz tube. The low pressure chemical vapor deposition apparatus according to claim 1, wherein the low pressure chemical vapor deposition apparatus is formed.
が前記化合物ソースガス供給管に連結され上端が少なく
ともローディングされたボートの上端に至る注入器が挿
入設置されることを特徴とする請求項５に記載の低圧化
学蒸着装置。6. The injector, wherein a lower end is connected to the compound source gas supply pipe and an upper end reaches at least an upper end of a loaded boat in the compound source gas injection passage. 5. The low pressure chemical vapor deposition device according to item 5.
は前記注入器が挿入される溝が形成されることを特徴と
する請求項１〜３のうちいずれかに記載の低圧化学蒸着
装置。7. The low-pressure chemistry according to claim 1, wherein a groove into which the injector is inserted is formed on an inner peripheral surface of a quartz tube forming the reaction furnace. Vapor deposition equipment.
給管の高さに位置し上端がボートの上端高さに至る垂直
形注入管と、前記化合物ソースガス供給管に連結される
水平部と前記垂直形注入管に連結される垂直部とを有す
る導入管とから構成されることを特徴とする請求項１，
４及び６のうちいずれかに記載の低圧化学蒸着装置。8. The injector has a vertical injection pipe whose lower end is at the height of the compound source gas supply pipe and whose upper end is at the height of the upper end of the boat, and a horizontal portion connected to the compound source gas supply pipe. 2. An introduction pipe having a vertical portion connected to the vertical injection pipe.
4. The low pressure chemical vapor deposition device according to any one of 4 and 6.
給管により構成され、前記注入器は下端が前記内部供給
管に連結され上端が前記加熱手段の下端高さに位置する
内部注入管と、下端が前記外部供給管に連結され上端が
ローディングされたボートの上端に位置する外部注入管
とから構成されることを特徴とする請求項１，４及び６
のうちいずれかに記載の低圧化学蒸着装置。9. The compound source gas supply pipe comprises an inner and outer supply pipe, and the injector has an inner injection pipe whose lower end is connected to the internal supply pipe and whose upper end is located at a lower end height of the heating means. 7. An external injection pipe having a lower end connected to the external supply pipe and an upper end located at the upper end of the loaded boat.
The low pressure chemical vapor deposition apparatus according to any one of 1.
着機ベースに固定設定されるホルダーにより固定設置さ
れることを特徴とする請求項９に記載の低圧化学蒸着装
置。10. The low pressure chemical vapor deposition apparatus according to claim 9, wherein the external injection pipe is fixedly installed by a holder whose lower end is fixedly set to the vapor deposition machine base.
固定される固定棒と、この固定棒が挿入され周面にセッ
トスクリューが締結された挿入管部と、この挿入管部の
先端に形成される外部注入管が挿入固定される注入管挿
入溝を有する把持部とから構成されることを特徴とする
請求項１０に記載の低圧化学蒸着装置。11. The holder is formed with a fixing rod fixed to an inner wall of a vapor deposition machine base, an insertion pipe portion into which the fixing rod is inserted and a set screw is fastened to a peripheral surface, and a tip of the insertion pipe portion. 11. The low pressure chemical vapor deposition apparatus according to claim 10, wherein the external injection pipe is formed of a grip portion having an injection pipe insertion groove into which the external injection pipe is fixed.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR11063/1993 | 1993-06-22 | ||
| KR1546/1994 | 1994-01-27 | ||
| KR19940001546 | 1994-01-27 | ||
| KR2019940013732U KR0116697Y1 (en) | 1994-06-14 | 1994-06-14 | Low pressure cvd apparatus |
| KR13732/1994 | 1994-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08288221A true JPH08288221A (en) | 1996-11-01 |
| JP2805589B2 JP2805589B2 (en) | 1998-09-30 |
Family
ID=26630182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6163179A Expired - Fee Related JP2805589B2 (en) | 1994-01-27 | 1994-06-22 | Low pressure chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2805589B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237239A (en) * | 1999-12-21 | 2001-08-31 | Axcelis Technologies Inc | Bell jar with integral gas dispersion path |
| JP2009224765A (en) * | 2008-02-20 | 2009-10-01 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN111074239A (en) * | 2020-01-21 | 2020-04-28 | 赛姆柯(苏州)智能科技有限公司 | LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61271818A (en) * | 1985-05-27 | 1986-12-02 | Toshiba Mach Co Ltd | Vapor growth apparatus |
| JPH0286119A (en) * | 1988-09-22 | 1990-03-27 | Tel Sagami Ltd | Heat-treating device |
| JPH04184923A (en) * | 1990-11-20 | 1992-07-01 | Tokyo Electron Ltd | Heat-treating equipment |
| JPH04206715A (en) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | Semiconductor processing equipment |
| JPH058936U (en) * | 1991-07-15 | 1993-02-05 | 関西日本電気株式会社 | Semiconductor manufacturing equipment |
-
1994
- 1994-06-22 JP JP6163179A patent/JP2805589B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61271818A (en) * | 1985-05-27 | 1986-12-02 | Toshiba Mach Co Ltd | Vapor growth apparatus |
| JPH0286119A (en) * | 1988-09-22 | 1990-03-27 | Tel Sagami Ltd | Heat-treating device |
| JPH04184923A (en) * | 1990-11-20 | 1992-07-01 | Tokyo Electron Ltd | Heat-treating equipment |
| JPH04206715A (en) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | Semiconductor processing equipment |
| JPH058936U (en) * | 1991-07-15 | 1993-02-05 | 関西日本電気株式会社 | Semiconductor manufacturing equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237239A (en) * | 1999-12-21 | 2001-08-31 | Axcelis Technologies Inc | Bell jar with integral gas dispersion path |
| JP4665204B2 (en) * | 1999-12-21 | 2011-04-06 | アクセリス テクノロジーズ インコーポレーテッド | Thermal processing chamber |
| JP2009224765A (en) * | 2008-02-20 | 2009-10-01 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN111074239A (en) * | 2020-01-21 | 2020-04-28 | 赛姆柯(苏州)智能科技有限公司 | LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2805589B2 (en) | 1998-09-30 |
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