JPH08287833A - Manufacture of plasma display panel - Google Patents
Manufacture of plasma display panelInfo
- Publication number
- JPH08287833A JPH08287833A JP8572695A JP8572695A JPH08287833A JP H08287833 A JPH08287833 A JP H08287833A JP 8572695 A JP8572695 A JP 8572695A JP 8572695 A JP8572695 A JP 8572695A JP H08287833 A JPH08287833 A JP H08287833A
- Authority
- JP
- Japan
- Prior art keywords
- magnesium oxide
- film
- display panel
- protective layer
- sec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、表示デバイスなどに用
いるガス放電表示パネルの製造方法に関し、特に誘電体
層の保護膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a gas discharge display panel used for a display device or the like, and more particularly to a method for manufacturing a protective film for a dielectric layer.
【0002】[0002]
【従来の技術】一般に交流駆動型ガス放電表示パネル
(以下、AC−PDPと記す)は誘電体層を放電による
イオン衝撃から保護するために耐熱性の保護層が設けら
れている。この保護層は放電空間に接することから放電
開始電圧を下げるために二次電子放出係数の大きいこと
が望ましく、酸化マグネシウム(MgO)が用いられて
いる。2. Description of the Related Art Generally, an AC-driven gas discharge display panel (hereinafter, referred to as AC-PDP) is provided with a heat-resistant protective layer for protecting a dielectric layer from ion bombardment due to discharge. Since this protective layer is in contact with the discharge space, it is desirable that the secondary electron emission coefficient is large in order to lower the discharge starting voltage, and magnesium oxide (MgO) is used.
【0003】このような酸化マグネシウム膜は、膜材料
を例えば電子ビーム加熱などによって蒸発させて誘電体
層の表面に結晶成長の形で堆積させる手法、すなわち蒸
着法によって形成される。Such a magnesium oxide film is formed by a method of evaporating a film material by, for example, electron beam heating and depositing it on the surface of the dielectric layer in the form of crystal growth, that is, an evaporation method.
【0004】[0004]
【発明が解決しようとする課題】現在のガス放電表示パ
ネルの駆動電圧は駆動回路の耐電圧や消費電力の面から
みれば、まだ低いとはいえず、さらなる大面積化を考え
た場合、より一層の低電圧化が望まれる。ガス放電表示
パネルの駆動電圧は、素子の構造、封入ガス等多くの要
因によって決定されるが、保護層の二次電子放出係数も
そのひとつであり、二次電子放出係数が高ければより低
い電圧で駆動することができる。酸化マグネシウムはこ
のような点からも保護層として採用されている。低電圧
化の面では、酸化マグネシウム膜の結晶配向性による二
次電子放出係数の違いが論議されている。すなわち、酸
化マグネシウムの<111>配向膜が他の膜質の酸化マ
グネシウムに対して二次電子放出係数が高いとされてい
る。また、経時変化の面からも<111>配向膜の優位
性が述べられている(例えば、特開平5−23451
9)。ここで、電子ビームを用いた蒸着法で酸化マグネ
シウムの<111>配向膜を得るためには、230℃以
上の基板温度で膜を堆積させるか、または1.5オング
ストローム/秒以上、3オングストローム/秒以下の堆
積速度で形成する必要がある。しかし、230℃以上と
いう高い基板温度で酸化マグネシウム膜を形成すると下
地層である低融点ガラス内の鉛(Pb)成分が酸化マグ
ネシウム膜中に拡散し、このような酸化マグネシウム膜
をAC−PDPの保護層として用いると駆動電圧が上昇
するという問題があった。また、1.5オングストロー
ム/秒以上、3オングストローム/秒以下という堆積速
度は生産性の面からは非常に低い値であり採用し難いと
いう問題があった。The current driving voltage of the gas discharge display panel is not yet low from the viewpoint of the withstand voltage and power consumption of the driving circuit. Further lowering of the voltage is desired. The driving voltage of the gas discharge display panel is determined by many factors such as the structure of the device and the enclosed gas, and the secondary electron emission coefficient of the protective layer is one of them. Can be driven by. Magnesium oxide is also employed as a protective layer from such a point. In terms of lowering the voltage, the difference in the secondary electron emission coefficient depending on the crystal orientation of the magnesium oxide film has been discussed. That is, it is said that the <111> orientation film of magnesium oxide has a higher secondary electron emission coefficient than magnesium oxide of other film quality. In addition, the superiority of the <111> orientation film is also described from the viewpoint of aging (for example, JP-A-5-23451).
9). Here, in order to obtain a <111> oriented film of magnesium oxide by a vapor deposition method using an electron beam, the film is deposited at a substrate temperature of 230 ° C. or higher, or 1.5 Å / sec or higher and 3 Å / sec or higher. It is necessary to form at a deposition rate of less than a second. However, when a magnesium oxide film is formed at a high substrate temperature of 230 ° C. or more, the lead (Pb) component in the low-melting glass, which is the underlying layer, diffuses into the magnesium oxide film, and such a magnesium oxide film is removed from the AC-PDP. When used as a protective layer, there is a problem that the driving voltage increases. Further, the deposition rate of 1.5 Å / sec or more and 3 Å / sec or less is a very low value from the viewpoint of productivity, and there is a problem that it is difficult to adopt the deposition rate.
【0005】[0005]
【課題を解決するための手段】請求項1記載の発明に係
るAC−PDPの製造方法は、上述の問題を解決するた
めに、酸化マグネシウムの<111>配向膜を下地層と
してその上に保護層となる酸化マグネシウム膜を積層形
成する工程を含む。In order to solve the above-mentioned problems, the method for manufacturing an AC-PDP according to the invention of claim 1 protects the magnesium oxide <111> orientation film as an underlayer. It includes a step of stacking and forming a magnesium oxide film to be a layer.
【0006】請求項2記載の発明に係るAC−PDPの
製造方法は、下地層となる酸化マグネシウムの<111
>配向膜を、230℃以上、350℃以下の基板温度で
蒸着法により形成する工程を含む。According to a second aspect of the present invention, there is provided a method for manufacturing an AC-PDP, wherein the magnesium oxide serving as an underlayer has a thickness of <111.
> Forming an alignment film by a vapor deposition method at a substrate temperature of 230 ° C. or more and 350 ° C. or less.
【0007】請求項3記載の発明に係るAC−PDPの
製造方法は、下地層となる酸化マグネシウムの<111
>配向膜を、1.5オングストローム/秒以上、3オン
グストローム/秒以下の堆積速度で蒸着法により形成す
る工程を含む。According to the third aspect of the present invention, there is provided a method for manufacturing an AC-PDP, wherein the under layer of magnesium oxide <111
And> forming an alignment film by a vapor deposition method at a deposition rate of 1.5 Å / sec or more and 3 Å / sec or less.
【0008】[0008]
【作用】ガラスを基板として蒸着法により酸化マグネシ
ウム膜を形成する場合、基板温度を150℃程度より高
くすると良好な結晶成長がみられるが主に<200>に
配向した膜である。しかし、下地を<111>に配向し
た酸化マグネシウム膜とした場合には、蒸着条件にあま
り左右されずその上に積層される膜にも<111>の配
向性が得られる。When a magnesium oxide film is formed by vapor deposition using glass as a substrate, good crystal growth is observed when the substrate temperature is higher than about 150 ° C., but the film is mainly oriented to <200>. However, when the underlying layer is a magnesium oxide film oriented to <111>, the orientation of <111> can be obtained even in a film laminated thereon, regardless of the deposition conditions.
【0009】[0009]
【実施例】図1は本発明の第1の実施例に係るAC−P
DPの製造方法により製造されたAC−PDPの構造を
模式的に示す要部断面図である。第1のガラス基板1a
と第2のガラス基板1b、互いに平行に隣接配置された
表示電極2a,2b、AC駆動のための誘電体層6a,
6b、放電空間5を単位発光領域毎に区画するための隔
壁4、後述する保護層形成下地層7a及び表面保護層7
b、単位発光領域を選択的に発光させるためのデータ電
極3、及び所定発光色の蛍光体8から構成されている。FIG. 1 shows an AC-P according to a first embodiment of the present invention.
FIG. 4 is a cross-sectional view of a principal part schematically showing a structure of an AC-PDP manufactured by a method for manufacturing a DP. First glass substrate 1a
And the second glass substrate 1b, the display electrodes 2a and 2b arranged adjacent to each other in parallel to each other, and the dielectric layers 6a and
6b, a partition 4 for partitioning the discharge space 5 for each unit light emitting region, a protective layer forming underlayer 7a and a surface protective layer 7 described later.
b, a data electrode 3 for selectively emitting light in a unit light emitting region, and a phosphor 8 of a predetermined emission color.
【0010】放電空間5には放電ガスとして例えばヘリ
ウムとキセノンからなるペニングガスが封入されてい
る。なお、誘電体層6a,6bは低融点ガラスペースト
を所定形状に印刷して焼成することにより形成されてい
る。The discharge space 5 is filled with a discharge gas such as a penning gas composed of helium and xenon. The dielectric layers 6a and 6b are formed by printing a low melting point glass paste in a predetermined shape and firing it.
【0011】一対の表示電極2a,2bに対して、これ
らの間の相対電位が交互に反転するように所定の駆動電
圧(交番パルス)を印加すると、印加毎に誘電体層6a
の表面に放電が起こり、これにより生じた紫外線によっ
て蛍光体8が励起されて発光する。When a predetermined drive voltage (alternating pulse) is applied to the pair of display electrodes 2a and 2b so that the relative potential between them is alternately inverted, the dielectric layer 6a is applied each time.
A discharge is generated on the surface of the phosphor, and the ultraviolet rays generated thereby excite the phosphor 8 to emit light.
【0012】保護層形成下地層7a及び表面保護層7b
は放電によるイオン衝撃から誘電体層6a,6bを保護
するために設けている。AC−PDPでは放電開始電圧
の低電圧化の上で有利な酸化マグネシウムを保護層材料
として用いる。Protective layer forming base layer 7a and surface protective layer 7b
Is provided to protect the dielectric layers 6a and 6b from ion bombardment due to discharge. In the AC-PDP, magnesium oxide, which is advantageous in lowering the firing voltage, is used as a protective layer material.
【0013】以上の構造のAC−PDPは、第1及び第
2のガラス基板1a,1bについて所定の構成要素を別
個に設ける工程、第1及び第2のガラス基板1a,1b
を対向配置して周囲を封止する工程、及び放電ガスを封
入する工程などを経て製造される。その際、第1のガラ
ス基板1a側において、保護層形成下地層7a及び表面
保護層7bは蒸着によって形成される。In the AC-PDP having the above structure, a step of separately providing predetermined components for the first and second glass substrates 1a and 1b, the first and second glass substrates 1a and 1b
Are disposed so as to face each other to seal the periphery, and a step of sealing a discharge gas, and the like. At that time, the protective layer forming base layer 7a and the surface protective layer 7b are formed by vapor deposition on the first glass substrate 1a side.
【0014】前記保護層形成下地層7a及び表面保護層
7bの形成工程について述べる。まず所定の構成要素を
設けた第1のガラス基板1aを蒸着装置内で表面温度が
250℃程度になるようにヒータにより加熱する。その
後電子ビームにより蒸着材料である酸化マグネシウムを
加熱、蒸発させ基板ガラス上に下地層とする酸化マグネ
シウム膜から成る保護層形成下地層7aを約3000オ
ングストロームの膜厚に形成する。このとき、堆積速度
は例えば20オングストローム/秒となるように制御す
る。保護層形成下地層7aを形成後、第1のガラス基板
1aの表面温度が170℃程度になるようにヒータを制
御し、さらに7000オングストロームの表面保護層7
bを形成する。このときも堆積速度は20オングストロ
ーム/秒となるように制御する。A process for forming the protective layer forming underlayer 7a and the surface protective layer 7b will be described. First, the first glass substrate 1a provided with predetermined components is heated by a heater in a vapor deposition apparatus so that the surface temperature becomes about 250 ° C. Thereafter, magnesium oxide as a vapor deposition material is heated and evaporated by an electron beam to form a protective layer forming underlayer 7a made of a magnesium oxide film as an underlayer on the substrate glass to a thickness of about 3000 Å. At this time, the deposition rate is controlled to be, for example, 20 angstroms / second. After forming the protective layer forming underlayer 7a, the heater is controlled so that the surface temperature of the first glass substrate 1a becomes approximately 170 ° C.
b is formed. At this time, the deposition rate is controlled so as to be 20 angstroms / second.
【0015】通常、ガラス基板を用いて基板温度を17
0℃程度、堆積速度を20オングストローム/秒として
電子ビーム蒸着法により酸化マグネシウム膜を形成した
場合、<200>に配向した膜となりやすい。しかし、
基板温度を高くすることにより<111>配向の膜を得
ることができる。図2は基板温度と配向性の関係を示し
たものである。図からわかるように230℃程度以上の
基板温度で<111>に配向した膜が得られることがわ
かる。基板温度をさらに高くしても配向性に変化はない
が下地となる誘電体層6aが軟化するため350℃を超
えるような温度での形成は不可能である。Usually, the substrate temperature is set to 17 by using a glass substrate.
When a magnesium oxide film is formed by an electron beam evaporation method at a deposition rate of 20 Å / sec at about 0 ° C., the film tends to be <200> oriented. But,
By raising the substrate temperature, a film with <111> orientation can be obtained. FIG. 2 shows the relationship between the substrate temperature and the orientation. As can be seen from the figure, a film oriented to <111> can be obtained at a substrate temperature of about 230 ° C. or higher. Even if the substrate temperature is further increased, there is no change in the orientation, but it is impossible to form the substrate at a temperature exceeding 350 ° C. because the dielectric layer 6a serving as the base is softened.
【0016】一方、<111>配向の酸化マグネシウム
膜を下地層とした場合、基板温度を170℃程度、堆積
速度を20オングストローム/秒としても、積層して形
成される酸化マグネシウム膜は<111>配向となる。On the other hand, when a magnesium oxide film of <111> orientation is used as an underlayer, the magnesium oxide film formed by lamination is <111> even when the substrate temperature is about 170 ° C. and the deposition rate is 20 Å / sec. Orientation.
【0017】表1は、3000オングストローム、<1
11>配向の酸化マグネシウム膜を下地層として、基板
温度170℃、堆積速度20オングストローム/秒の条
件で7000オングストロームの酸化マグネシウムを積
層形成した膜と、下地酸化マグネシウム層無しで基板温
度170℃、堆積速度20オングストローム/秒で10
000オングストロームの酸化マグネシウムを形成した
膜を、X線回折により評価し、<111>回折ピークと
<200>回折ピークの強度比を示したものである。Table 1 shows 3000 Å, <1
11> Using a magnesium oxide film of orientation as a base layer, a film formed by stacking magnesium oxide of 7000 Å at a substrate temperature of 170 ° C. and a deposition rate of 20 Å / sec, and a substrate temperature of 170 ° C. without a base magnesium oxide layer 10 at a speed of 20 angstroms / second
The film on which 000 angstroms of magnesium oxide was formed was evaluated by X-ray diffraction and shows the intensity ratio between the <111> diffraction peak and the <200> diffraction peak.
【0018】[0018]
【表1】 この表1から、<111>配向の下地層を用いた場合に
は<111>配向の膜が積層されていることがわかる。[Table 1] From Table 1, it can be seen that when the underlayer of <111> orientation is used, the film of <111> orientation is laminated.
【0019】このように、第1の実施例では表面保護層
7bを形成する時の基板温度は170℃程度と比較的低
いため、膜中への鉛の拡散は起こらない。As described above, in the first embodiment, since the substrate temperature when forming the surface protective layer 7b is relatively low at about 170 ° C., diffusion of lead into the film does not occur.
【0020】次に本発明の第2の実施例による保護層形
成下地層7a及び表面保護層7bの形成工程について述
べる。前述した第1の実施例と同様に蒸着装置内に設置
した基板を表面温度が170℃程度となるようにヒータ
により加熱する。その後電子ビーム蒸着により酸化マグ
ネシウム層を形成する。このとき、膜厚が3000オン
グストロームとなるまでは堆積速度が2オングストロー
ム/秒となるように電子ビームを制御し、その後700
0オングストロームとなるまでは堆積速度が20オング
ストローム/秒となるように電子ビームを制御する。Next, the steps of forming the protective layer forming underlayer 7a and the surface protective layer 7b according to the second embodiment of the present invention will be described. As in the first embodiment, the substrate placed in the vapor deposition apparatus is heated by a heater so that the surface temperature becomes about 170 ° C. Then, a magnesium oxide layer is formed by electron beam evaporation. At this time, the electron beam was controlled so that the deposition rate was 2 Å / sec until the film thickness reached 3000 Å, and then 700
The electron beam is controlled so that the deposition rate is 20 angstroms / sec until it reaches 0 angstroms.
【0021】図3は基板温度を170℃とした時の堆積
速度と配向性の関係を示したものである。図から、1.
5〜3オングストローム/秒の堆積速度で<111>配
向の膜が得られることがわかる。FIG. 3 shows the relationship between the deposition rate and the orientation when the substrate temperature is 170 ° C. From the figure, 1.
It can be seen that a film with <111> orientation is obtained at a deposition rate of 5 to 3 Å / sec.
【0022】このようにして形成した<111>配向の
酸化マグネシウム膜を保護層形成下地層7aとすること
により、20オングストローム/秒といった高い堆積速
度で積層形成した酸化マグネシウム膜も<111>とな
る。By using the <111> oriented magnesium oxide film thus formed as the protective layer forming underlayer 7a, the magnesium oxide film laminated and formed at a high deposition rate of 20 Å / sec also becomes <111>. .
【0023】このように、第2の実施例の方法によれ
ば、保護層の全てを2オングストローム/秒で形成した
場合に比べて、膜形成に要する時間は約1/2になり高
い生産性が得られる。As described above, according to the method of the second embodiment, the time required for film formation is about 1/2, and the productivity is high, as compared with the case where all the protective layers are formed at 2 Å / sec. Is obtained.
【0024】尚、以上の実施例においては、面放電型の
AC−PDPを例示したが、本発明は対向放電型のAC
−PDPにも適用することができる。上述の実施例にお
いて、蒸発源の形式は酸化マグネシウムの<111>配
向膜が得られる範囲で適宜変更することができる。Although the surface discharge type AC-PDP has been illustrated in the above embodiments, the present invention is directed to the opposed discharge type AC-PDP.
-Can be applied to PDPs. In the above-described embodiments, the type of evaporation source can be appropriately changed within a range where a <111> oriented film of magnesium oxide can be obtained.
【0025】[0025]
【発明の効果】本発明によれば、誘電体層を保護し良好
な放電特性を得るための酸化マグネシウムの<111>
配向膜を容易に形成することができる。According to the present invention, <111> of magnesium oxide for protecting the dielectric layer and obtaining good discharge characteristics is obtained.
An alignment film can be easily formed.
【図1】本発明に係るAC−PDPの構造を模式的に示
す要部断面図である。FIG. 1 is a cross-sectional view of an essential part schematically showing the structure of an AC-PDP according to the present invention.
【図2】蒸着時の基板温度と酸化マグネシウム膜の結晶
配向性の関係を示したものである。FIG. 2 shows the relationship between the substrate temperature during vapor deposition and the crystal orientation of a magnesium oxide film.
【図3】基板温度を170℃とした時の堆積速度と酸化
マグネシウム膜の結晶配向性の関係を示したものであ
る。FIG. 3 shows the relationship between the deposition rate and the crystal orientation of a magnesium oxide film when the substrate temperature is 170 ° C.
1a 第1のガラス基板 1b 第2のガラス基板 2a,2b 表示電極 3 データ電極 4 隔壁 5 放電空間 6a,6b 誘電体層 7a 保護層形成下地層 7b 表面保護層 8 蛍光体 1a First glass substrate 1b Second glass substrate 2a, 2b Display electrode 3 Data electrode 4 Partition wall 5 Discharge space 6a, 6b Dielectric layer 7a Protective layer forming underlayer 7b Surface protective layer 8 Phosphor
Claims (3)
われた電極対、誘電体上に電極部を覆うように形成され
た酸化マグネシウム(MgO)層及び放電ガスで充たさ
れた放電空間からなる交流駆動型ガス放電表示パネルの
製造方法において、前記酸化マグネシウム層の形成工程
が、<111>配向の酸化マグネシウム膜を下地層とし
てさらにその上に酸化マグネシウム膜を積層形成する工
程を含むことを特徴とするプラズマディスプレイパネル
の製造方法。1. A first and second insulating substrate, an electrode pair covered with a dielectric, a magnesium oxide (MgO) layer formed on the dielectric to cover the electrode portion, and a discharge gas. In the method for manufacturing an AC drive type gas discharge display panel having a discharge space, the step of forming the magnesium oxide layer comprises a step of forming a magnesium oxide film having a <111> orientation as a base layer and further laminating a magnesium oxide film thereon. A method of manufacturing a plasma display panel, comprising:
た酸化マグネシウム層が、230℃以上、350℃以下
の基板温度で蒸着法により形成された膜であることを特
徴とする請求項1記載のプラズマディスプレイパネルの
製造方法。2. The <111> -oriented magnesium oxide layer used as an underlayer is a film formed by a vapor deposition method at a substrate temperature of 230 ° C. or higher and 350 ° C. or lower. Manufacturing method of plasma display panel.
た酸化マグネシウム層が、1.5オングストローム/秒
以上、3オングストローム/秒以下の堆積速度で蒸着法
により形成された膜であることを特徴とする請求項1記
載のプラズマディスプレイパネルの製造方法。3. The <111> -oriented magnesium oxide layer used as an underlayer is a film formed by a vapor deposition method at a deposition rate of 1.5 angstrom / sec or more and 3 angstrom / sec or less. The method for manufacturing a plasma display panel according to claim 1.
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JP8572695A JP2663909B2 (en) | 1995-04-11 | 1995-04-11 | Method for manufacturing plasma display panel |
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JP8572695A JP2663909B2 (en) | 1995-04-11 | 1995-04-11 | Method for manufacturing plasma display panel |
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JP2663909B2 JP2663909B2 (en) | 1997-10-15 |
Family
ID=13866860
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