JPH0828405B2 - Metal projection forming substrate and method of manufacturing and transferring the same - Google Patents
Metal projection forming substrate and method of manufacturing and transferring the sameInfo
- Publication number
- JPH0828405B2 JPH0828405B2 JP2217442A JP21744290A JPH0828405B2 JP H0828405 B2 JPH0828405 B2 JP H0828405B2 JP 2217442 A JP2217442 A JP 2217442A JP 21744290 A JP21744290 A JP 21744290A JP H0828405 B2 JPH0828405 B2 JP H0828405B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- transparent conductive
- conductive film
- film
- insulating resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体素子の電極とフィルムリード配線基板
とを接続する際に用いる転写バンプ用金属突起を形成す
るための基板の構成、製造方法及びその転写方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a substrate for forming metal bumps for transfer bumps used when connecting electrodes of a semiconductor element and a film lead wiring substrate, a manufacturing method thereof, and a transfer thereof. It is about the method.
従来の技術 半導体素子の実装方式で薄型、小型化に有力な方式に
フィルムキャリア実装方式がある。この技術は半導体素
子のAL電極上にCr,Cu,Ti,Pd等のバリヤメタル層を形成
した後、この上にAu、半田等の金属突起を10〜30μｍ程
度形成する。次いでポリイミドやガラエポ等の絶縁テー
プ上に形成されたCu箔のフィルムリードと前記の金属突
起とを加圧、加熱し接合する。2. Description of the Related Art A film carrier mounting method is one of the most effective methods for thinning and miniaturizing semiconductor element mounting methods. In this technique, a barrier metal layer of Cr, Cu, Ti, Pd or the like is formed on an AL electrode of a semiconductor element, and then metal projections of Au, solder or the like are formed on the barrier metal layer of about 10 to 30 μm. Then, the Cu foil film lead formed on the insulating tape such as polyimide or glass epoxy and the metal projection are pressed and heated to be joined.
しかし、この技術では半導体素子のAl電極上にバリア
メタル層を形成するための蒸着、フォトリソ、エッチン
グ工程や、また金属突起を形成するためのフォトリソ工
程、電解めっき等、多くの複雑な工程と設備を必要とす
る。そのほかにも全ての工程においてウイハー単位で処
理がおこなわれるためコストの上昇や歩留の低下といっ
た問題点があった。However, in this technology, many complicated processes and equipment such as vapor deposition, photolithography, etching process for forming a barrier metal layer on the Al electrode of a semiconductor element, and photolithography process for forming metal protrusions, electrolytic plating, etc. Need. In addition, since processing is performed in units of wafers in all steps, there are problems such as increased cost and reduced yield.
これらの問題点をすべて解決する新しい技術として転
写バンプ方式が開発された。この方式は基板上に金属突
起を形成し、この金属突起フィルムキャリアのリードに
転写接合させ、リードの金属突起と半導体素子の電極と
を熱圧着によって接合するものである。金属突起は、少
量多品種向きや、大量生産向きなど、種類や量に応じて
用いる形成基板の構造が異なる。第２図によって金属突
起を形成する一方法を説明する。The transfer bump method has been developed as a new technology that solves all of these problems. In this method, a metal protrusion is formed on a substrate, transferred and bonded to a lead of the metal protrusion film carrier, and the metal protrusion of the lead and the electrode of the semiconductor element are bonded by thermocompression bonding. The structure of the forming substrate used for the metal projection differs depending on the type and quantity, such as for small-quantity multi-product production and mass production production. One method of forming the metal protrusion will be described with reference to FIG.
まず、第２図（ａ）に示すように絶縁性基板21の一主
面にめっき用の電極としてPtやITO（インジウムティン
オキサイド）等の導電膜22を形成する。形成方法として
はスパッタ蒸着、EB蒸着等を用いる。次に（ｂ）に示す
ように導電膜22上全面に感光性絶縁樹脂（フォトレジス
ト）23をスピンコートする。厚さは約0.5μｍ〜1.5μｍ
程度である。しかるのち、感光性絶縁樹脂中の溶剤を除
去するために80〜100℃のオーブン中に15〜20分間入れ
る。次に、（ｃ）に示すように、フォトマスク24と位置
合わせし紫外線25を照射する。その後現像液に浸漬し、
リンスを施した後オーブンにより感光性絶縁樹脂23を硬
化させる。このようにして（ｄ）に示したように感光性
絶縁樹脂23に開口部26を形成する。しかるのち電解めっ
き法によって開口部26内の導電膜22上に金属突起27を約
10〜30μｍ形成する。この後感光性絶縁樹脂23を除去す
る。（図ｆ） つぎに第３図とともに金属突起をフィルムキャリア30
のフィルムリードに転写する方法を説明する。第３図
（ａ）に示すように、まずフィルムキャリアのフィルム
リード31と金属突起27とを位置合わせする。次に（ｂ）
に示すようにボンデイングツール32で加熱、加圧（300
〜320℃、５〜20g/リード）する。しかるの（ｃ）に示
すようにボンデイングツール32での加熱、加圧を解除す
ると基板上の金属突起27はフィルムリード31側に転写、
接合される。First, as shown in FIG. 2A, a conductive film 22 such as Pt or ITO (Indium Tin Oxide) is formed as an electrode for plating on one main surface of the insulating substrate 21. As a forming method, sputter vapor deposition, EB vapor deposition, or the like is used. Next, as shown in (b), a photosensitive insulating resin (photoresist) 23 is spin-coated on the entire surface of the conductive film 22. Thickness is about 0.5μm-1.5μm
It is a degree. Then, put it in an oven at 80 to 100 ° C for 15 to 20 minutes to remove the solvent in the photosensitive insulating resin. Next, as shown in (c), the photomask 24 is aligned with the ultraviolet ray 25. Then soak in the developer,
After rinsing, the photosensitive insulating resin 23 is cured by an oven. Thus, the opening 26 is formed in the photosensitive insulating resin 23 as shown in FIG. Then, a metal protrusion 27 is formed on the conductive film 22 in the opening 26 by electrolytic plating.
Form 10 to 30 μm. After that, the photosensitive insulating resin 23 is removed. (Fig. F) Next, the metal protrusion is attached to the film carrier 30 together with Fig. 3.
The method of transferring to the film lead will be described. As shown in FIG. 3A, first, the film lead 31 of the film carrier and the metal protrusion 27 are aligned. Then (b)
As shown in, heat with the bonding tool 32, pressurize (300
~ 320 ℃, 5 ~ 20g / lead). However, as shown in (c), when heating and pressurization by the bonding tool 32 are released, the metal protrusions 27 on the substrate are transferred to the film lead 31 side,
To be joined.
発明が解決しようとする課題 しかしながら、この技術において金属突起を形成する
たびに導電膜上に感光性絶縁樹脂（フォトレジスト）を
塗布しマスクを合わせ、露光、現像、リンスの工程及び
めっきによって金属突起を形成する工程をくり返さなけ
ればならない。すなわち、金属突起を得るためには、パ
ターンニングを行うための高額な設備や、多くの材料、
複雑な工程が必要となる。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in this technique, every time a metal protrusion is formed, a photosensitive insulating resin (photoresist) is applied on the conductive film to align a mask, and the metal protrusion is exposed, developed, rinsed, and plated. Must be repeated. That is, in order to obtain metal protrusions, expensive equipment for patterning, many materials,
A complicated process is required.
このためバンプを形成するためのコストが高くなった
り、複雑な工程のために歩留まりが低下したりし、製品
全体のコストが高くなってしまうという問題があった。Therefore, there is a problem that the cost for forming the bumps becomes high, the yield decreases due to a complicated process, and the cost of the entire product becomes high.
本発明は、金属突起形成ごとにフォトレジストを塗布
し、これをフォトマスクで選択露光する方法を用いる必
要のない基板構造及び方法を提供することを目的とす
る。It is an object of the present invention to provide a substrate structure and a method which do not require a method of applying a photoresist for each formation of a metal protrusion and selectively exposing the photoresist with a photomask.
課題を解決するための手段 本発明は、半導体素子の電極と対応した位置に金属突
起を形成する多層膜からなる基板において、前記半導体
素子の電極に対応した位置が、基板上に第一の透明導電
膜、第一のチタン膜、第二の透明導電膜から構成され、
その他の領域が第一の透明導電膜、第一のチタン膜の酸
化物、第一の感光性絶縁樹脂から構成されたことを特徴
とした金属突起形成基板を提供する。そして、本発明
は、この基板を用いて金属突起を形成する方法を提供す
る。Means for Solving the Problems The present invention provides a substrate formed of a multilayer film in which metal protrusions are formed at positions corresponding to electrodes of a semiconductor element, and the position corresponding to the electrodes of the semiconductor element is a first transparent film on the substrate. Composed of a conductive film, a first titanium film, and a second transparent conductive film,
Provided is a substrate for forming a metal projection, characterized in that the other region is composed of a first transparent conductive film, an oxide of a first titanium film, and a first photosensitive insulating resin. And this invention provides the method of forming a metal protrusion using this board | substrate.
作用 課題を解決する手段に説明した様に、本発明は、金属
突起を形成する部分のみに第二の透明導電膜と金属チタ
ン膜があり、他の部分は透明の酸化チタン膜を有する構
造としておくことによって、感光性絶縁樹脂（レジス
ト）を塗布した後マスク合わせを行うことなく、裏面よ
り紫外線を照射するだけで容易に感光性樹脂のパターン
ニングができる。また、感光性絶縁樹脂に耐熱性のもの
を用いると、形成した金属突起を転写させる際に加わる
熱に耐えることができるため、毎回感光性絶縁樹脂を塗
布することなく、何回もくり返し使用することが可能と
なる。As described in the means for solving the action problem, the present invention has a structure in which the second transparent conductive film and the metal titanium film are present only in the portion where the metal protrusions are formed, and the other portion has a transparent titanium oxide film. By doing so, the photosensitive resin can be easily patterned only by irradiating ultraviolet rays from the back surface without performing mask alignment after applying the photosensitive insulating resin (resist). In addition, when a heat-resistant photosensitive insulating resin is used, it can withstand the heat applied when transferring the formed metal protrusions, and therefore it is used repeatedly without applying the photosensitive insulating resin each time. It becomes possible.
実施例 本発明の一実施例を第１図とともに説明する。まず、
（ａ）に示すように透明絶縁性基板１の一主面に透明導
電膜（ITO:インジウムティンオキサイド）２を全面に形
成する。透明絶縁性基板１には耐熱性のガラスを用い
た。透明導電膜（ITO:インジウムティンオキサイド）２
の形成方法としては、スパッタ蒸着、EB蒸着等を用い、
シート抵抗を10Ω□以下にしておく。これは基板内の金
属突起の高さのバラツキを２μｍ以下に抑えるためであ
る。次に透明導電膜２を形成したうえにチタン３を同様
に全面に約500Å〜2000Åぐらい蒸着する。この形成方
法もスパッタ蒸着、EB蒸着等を用いるのが望ましい。次
にチタン３上から再度、透明導電膜４を500Å〜3000Å
形成する。形成方法は同様である。Embodiment An embodiment of the present invention will be described with reference to FIG. First,
As shown in (a), a transparent conductive film (ITO: indium tin oxide) 2 is formed on the entire main surface of the transparent insulating substrate 1. Heat-resistant glass was used for the transparent insulating substrate 1. Transparent conductive film (ITO: Indium tin oxide) 2
As a method for forming the
Keep the sheet resistance below 10Ω □. This is to suppress the variation in height of the metal projections in the substrate to 2 μm or less. Next, the transparent conductive film 2 is formed, and titanium 3 is similarly vapor-deposited on the entire surface at a thickness of about 500Å to 2000Å. It is desirable to use sputter vapor deposition, EB vapor deposition, or the like also for this forming method. Next, the transparent conductive film 4 is again put on the titanium 3 by 500Å to 3000Å
Form. The formation method is the same.
次に（ｂ）に示すように半導体素子の電極に対応した
位置にのみフォトレジストが残るようにパターンニング
を行ってレジストパターン100を形成し、これをマスク
にして透明導電膜４をエッチングする。エッチング液は
塩酸と塩化第二鉄の混合液を用いた。この後、フォトレ
ジストを除去する。次にこの基板にO2プラズマを照射す
るか、酸化炉に入れて透明導電膜４が残っていない部
分、すなわち露出したチタンを透明の酸化チタン５にす
る。次に（ｃ）に示すように全面にネガ型のフォトレジ
スト６を塗布する。塗布する厚さは、透明導電膜４の厚
さと同じになる様にする。次に透明絶縁性基板１の裏面
より紫外線７を照射する。このとき透明の酸化チタン５
には紫外線７が透過するが、チタン３には透過しない。
このためネガ型のフォトレジスト６を現像すると、
（ｄ）に示すように透明導電膜４上のフォトレジスト６
は除去され、酸化チタン５上にのみフォトレジスト６が
残る。次にレジスト６をマスクとして、（ｅ）にしめす
ように透明導電膜２を一方の電極にして、電解めっきに
よって透明導電膜４上に選択的に金属突起８を形成す
る。形成する高さは、20〜30μｍである。この後、フォ
トレジスト６を除去する。この後、フィルムキャリアの
インナーリードに金属突起８を転写、接合する工程は、
従来技術の第３図に示した方法と同様に行う。金属突起
を転写した基板にくり返し金属突起を形成するには、第
１図（ｃ）以降に示した工程をくり返す。Next, as shown in (b), patterning is performed so that the photoresist remains only at the positions corresponding to the electrodes of the semiconductor element to form a resist pattern 100, and the transparent conductive film 4 is etched using this as a mask. The etching solution used was a mixed solution of hydrochloric acid and ferric chloride. After that, the photoresist is removed. Next, this substrate is irradiated with O 2 plasma or placed in an oxidation furnace to make the portion where the transparent conductive film 4 does not remain, that is, the exposed titanium, transparent titanium oxide 5. Next, as shown in (c), a negative photoresist 6 is applied on the entire surface. The applied thickness is the same as the thickness of the transparent conductive film 4. Next, ultraviolet rays 7 are irradiated from the back surface of the transparent insulating substrate 1. At this time, transparent titanium oxide 5
Ultraviolet rays 7 are transmitted through the titanium but not through the titanium 3.
Therefore, when the negative photoresist 6 is developed,
As shown in (d), the photoresist 6 on the transparent conductive film 4
Are removed, leaving the photoresist 6 only on the titanium oxide 5. Next, using the resist 6 as a mask, the transparent conductive film 2 is used as one electrode as shown in (e), and the metal projection 8 is selectively formed on the transparent conductive film 4 by electrolytic plating. The height to be formed is 20 to 30 μm. Then, the photoresist 6 is removed. After that, the step of transferring and joining the metal protrusions 8 to the inner leads of the film carrier is
The method is similar to the method shown in FIG. 3 of the prior art. In order to repeatedly form the metal protrusions on the substrate onto which the metal protrusions have been transferred, the steps shown in FIG. 1 (c) and subsequent steps are repeated.
以上の工程によればフォトレジスト６の金属塗布、フ
ォトマスクなしの表面からの全面露光のみで金属突起形
成マスクができ、金属突起の繰り返し形成が容易とな
る。According to the above steps, the metal projection forming mask can be formed only by applying the metal of the photoresist 6 and exposing the entire surface from the surface without the photomask, and the repeated formation of the metal projection is facilitated.
また、第１図（ｃ）においてもフォトレジスト６のか
わりに耐熱性の感光レジストや感光性ポリイミドを用い
ると、さらに工程を簡略化することができる。その方法
を以下に説明する。まず第１図（ｃ）〜（ｄ）にしめす
ように同様にしてパターンニングを行い、（ｄ）に示す
ような構造を得る。次に耐熱性感光レジストや感光性ポ
リイミドを除去することなく、第１図（ｆ）に示すよう
に透明導電膜２を一方の電極として電解めっきによって
金属突起を形成する。この後、フィルムキャリアのイン
ナーリードに金属突起８を転写、接合する工程は、従来
技術の第３図に示した方法と同様に行う。この場合、耐
熱性感光レジストや感光性ポリイミドを用いているため
金属突起を転写接合する工程において加わる熱に耐えう
ることが可能となり、とくに転写工程の前に除去する必
要がない。よってくり返し金属突起を形成するときに
は、再度電解めっきの工程をくり返すだけで容易に金属
突起を得ることができる。Also, in FIG. 1C, if a heat-resistant photosensitive resist or photosensitive polyimide is used instead of the photoresist 6, the process can be further simplified. The method will be described below. First, patterning is performed in the same manner as shown in FIGS. 1C to 1D to obtain a structure as shown in FIG. Next, without removing the heat-resistant photosensitive resist and the photosensitive polyimide, metal projections are formed by electrolytic plating using the transparent conductive film 2 as one electrode as shown in FIG. 1 (f). Thereafter, the step of transferring and joining the metal protrusions 8 to the inner leads of the film carrier is performed in the same manner as the method shown in FIG. In this case, since the heat-resistant photosensitive resist or photosensitive polyimide is used, it is possible to withstand the heat applied in the step of transferring and joining the metal protrusions, and it is not particularly necessary to remove it before the transfer step. Therefore, when repeatedly forming the metal protrusions, the metal protrusions can be easily obtained only by repeating the electrolytic plating step again.
発明の効果 本発明の実施例に示したように、２層の透明導電膜の
間に選択的に酸化チタンとしたチタン膜を形成した構造
とすることによって、バンプを形成する都度、マスクあ
わせを行うことなくフォトレジストに容易にパターンニ
ングを行える。これにより高額なマスク合わせ装置を必
要とせず、簡易的な紫外線照射機のみでパターンニング
が可能となり、コスト削減が可能となる。また、工程が
極めて短縮化され、歩留まり向上にもつながる。また、
フォトレジストの代わりに耐熱性感光レジストや感光性
ポリイミドを用いた構造では、一度パターンニングをし
ておくと20〜30回程度はくり返し使用することが可能と
なる。このため、金属突起を形成するには電解めっきの
工程をくり返すだけでよく、大幅に工程の簡略化とコス
ト削減になる。EFFECTS OF THE INVENTION As shown in the embodiments of the present invention, by adopting a structure in which a titanium film made of titanium oxide is selectively formed between two layers of transparent conductive films, mask alignment is performed every time a bump is formed. The photoresist can be easily patterned without performing. As a result, it is possible to perform patterning only with a simple UV irradiator without requiring an expensive mask aligning device, and it is possible to reduce costs. Further, the process is extremely shortened, which leads to an improvement in yield. Also,
In a structure using a heat-resistant photosensitive resist or a photosensitive polyimide instead of the photoresist, once patterned, it can be used repeatedly 20 to 30 times. Therefore, in order to form the metal protrusion, it is sufficient to repeat the electrolytic plating process, which greatly simplifies the process and reduces the cost.
第１図は本発明の一実施例による金属突起形成方法の工
程断面図、第２図は従来例による金属突起形成方法の工
程断面図、第３図は形成した金属突起をフィルムキャリ
アのインナーリードに転写する工程断面図である。 １……透明絶縁性基板、２、４……透明導電膜、３……
チタン、５……酸化チタン、６……フォトレジスト、７
……紫外線、８……金属突起。FIG. 1 is a process sectional view of a metal protrusion forming method according to an embodiment of the present invention, FIG. 2 is a process sectional view of a conventional metal protrusion forming method, and FIG. It is a process sectional view which transfers to. 1 ... Transparent insulating substrate, 2, 4 ... Transparent conductive film, 3 ...
Titanium, 5 ... Titanium oxide, 6 ... Photoresist, 7
…… UV rays, 8 …… Metal projections.
Claims (4)
起を形成する多層膜からなる基板において、前記半導体
素子の電極に対応した位置が、基板上に第一の透明導電
膜、第一のチタン膜、第二の透明導電膜から構成され、
その他の領域が第一の透明導電膜、第一のチタン膜の酸
化物、第一の感光性絶縁樹脂から構成されたことを特徴
とした金属突起形成基板。1. A substrate comprising a multi-layered film having metal protrusions formed at positions corresponding to electrodes of a semiconductor element, wherein a position corresponding to the electrodes of the semiconductor element is formed on the substrate by a first transparent conductive film and a first transparent conductive film. Composed of a titanium film and a second transparent conductive film,
A substrate for forming metal projections, characterized in that the other region is composed of a first transparent conductive film, an oxide of a first titanium film, and a first photosensitive insulating resin.
導電膜、前記第一の透明導電膜上に金属チタン膜、前記
金属チタン膜上に第二の透明導電膜を形成する工程、半
導体素子の電極に対応した位置にのみエッチングによっ
て前記第二の透明導電膜を残す工程、第二の透明導電膜
が除去された前記金属チタン膜を透明の酸化チタンにす
る工程、この後、全面にネガ型の感光性絶縁樹脂を塗布
する工程、前記透明絶縁性基板の裏面から紫外線を照射
する工程、前記感光性絶縁樹脂の感光された部分を現像
し、前記第二の透明導電膜上の前記感光性絶縁樹脂を除
去する工程、しかるのち前記感光性絶縁樹脂を硬化し、
前記第二の透明導電膜上に電解めっき法により金属突起
を形成することを特徴とした金属突起形成基板の製造方
法。2. A first transparent conductive film is formed on the entire main surface of the transparent insulating substrate, a metal titanium film is formed on the first transparent conductive film, and a second transparent conductive film is formed on the metal titanium film. A step, a step of leaving the second transparent conductive film by etching only at a position corresponding to an electrode of a semiconductor element, a step of converting the titanium metal film from which the second transparent conductive film is removed to a transparent titanium oxide, A step of applying a negative type photosensitive insulating resin on the entire surface, a step of irradiating ultraviolet rays from the back surface of the transparent insulating substrate, developing the exposed portion of the photosensitive insulating resin, and the second transparent conductive film. The step of removing the photosensitive insulating resin above, after which the photosensitive insulating resin is cured,
A method of manufacturing a metal projection forming substrate, comprising forming metal projections on the second transparent conductive film by electrolytic plating.
基板を用い、電解めっき法によって第二の透明導電膜上
に金属突起を形成し、前記金属突起とフィルムキャリア
のインナーリードを位置合わせし、加熱、加圧すること
により、前記フィルムキャリアのインナーリードに金属
突起を転写、接合することを特徴とした金属突起の転写
方法。3. A metal protrusion forming substrate according to claim 1, wherein a metal protrusion is formed on a second transparent conductive film by electrolytic plating, and the metal protrusion and the inner lead of the film carrier are positioned. A method for transferring metal projections, characterized in that the metal projections are transferred and joined to the inner leads of the film carrier by combining, heating and pressing.
基板上に形成した金属突起を、感光性絶縁樹脂を除去し
転写させた後、全面に感光性絶縁樹脂を塗布する工程、
前記透明絶縁性基板の裏面から紫外線を照射する工程、
前記感光性絶縁樹脂の感光された部分を現像し、前記第
二の透明導電膜上の前記感光性絶縁樹脂を除去する工
程、しかるのち前記感光性絶縁樹脂を硬化し、前記第二
の透明導電膜上に電解めっき法により金属突起を形成す
る工程をくり返すことを特徴とする金属突起形成基板の
製造方法。4. A step of applying a photosensitive insulating resin to the entire surface after removing the photosensitive insulating resin and transferring the metal protrusion formed on the metal protrusion forming substrate according to claim 2.
Irradiating ultraviolet rays from the back surface of the transparent insulating substrate,
The step of developing the exposed portion of the photosensitive insulating resin and removing the photosensitive insulating resin on the second transparent conductive film, after which the photosensitive insulating resin is cured and the second transparent conductive resin is removed. A method for producing a metal projection forming substrate, comprising repeating the step of forming metal projections on a film by an electrolytic plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217442A JPH0828405B2 (en) | 1990-08-17 | 1990-08-17 | Metal projection forming substrate and method of manufacturing and transferring the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217442A JPH0828405B2 (en) | 1990-08-17 | 1990-08-17 | Metal projection forming substrate and method of manufacturing and transferring the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0499342A JPH0499342A (en) | 1992-03-31 |
| JPH0828405B2 true JPH0828405B2 (en) | 1996-03-21 |
Family
ID=16704298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2217442A Expired - Fee Related JPH0828405B2 (en) | 1990-08-17 | 1990-08-17 | Metal projection forming substrate and method of manufacturing and transferring the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828405B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1246773A2 (en) | 2000-01-07 | 2002-10-09 | President And Fellows Of Harvard College | Fabrication of metallic microstructures via exposure of photosensitive composition |
-
1990
- 1990-08-17 JP JP2217442A patent/JPH0828405B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0499342A (en) | 1992-03-31 |
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