JPH08227857A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH08227857A JPH08227857A JP3222295A JP3222295A JPH08227857A JP H08227857 A JPH08227857 A JP H08227857A JP 3222295 A JP3222295 A JP 3222295A JP 3222295 A JP3222295 A JP 3222295A JP H08227857 A JPH08227857 A JP H08227857A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- inert gas
- gas
- periphery
- peripheral portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B28/00—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
- C04B28/30—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing magnesium cements or similar cements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は気相成長装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus.
【０００２】[0002]
【従来の技術】半導体装置の製造工程に於て、金属膜等
の形成に気相成長装置が多く用いられている。図４はこ
の種の従来の気相成長装置の断面図である。図におい
て、１は反応室、２は設置されるべき半導体基板３と同
一形状の保持面２Ａを有し、かつ半導体基板３を加熱す
るためのヒーターを内蔵し、半導体基板３を成膜位置へ
移動させる上下駆動可能な加熱ステージ、４はその両側
に残留ガス排出口５を有し加熱ステージ２の周囲に設け
られ反応室１を構成するセラミック等からなる保護ブロ
ック、９は反応室１の上部にあり、先端部が下方に臨
み、加熱ステージ２と対向した位置に設けられ半導体基
板３の表面に反応ガスを噴出させる、反応ガス噴出ヘッ
ド、１０は半導体基板３の表面に密着させることで、半
導体基板３の周辺部を一定の幅でマスクすることになる
ドーナツ状で、半導体基板３と同形状の成膜防止用クラ
ンプである。成膜防止用クランプ１０は、半導体基板３
と密着する内面の全周にわたって段差が設けられ、その
内周部は半導体基板と同一形状を有している。2. Description of the Related Art In a semiconductor device manufacturing process, a vapor phase growth apparatus is often used for forming a metal film or the like. FIG. 4 is a cross-sectional view of this type of conventional vapor phase growth apparatus. In the figure, 1 is a reaction chamber, 2 has a holding surface 2A having the same shape as the semiconductor substrate 3 to be installed, and incorporates a heater for heating the semiconductor substrate 3, and moves the semiconductor substrate 3 to a film forming position. A heating stage that can be moved up and down to be moved, 4 is a protection block made of ceramics or the like that is provided around the heating stage 2 and has a residual gas discharge port 5 on both sides, and that constitutes the reaction chamber 1; The reaction gas ejection head 10 is provided at a position facing the heating stage 2 so that a reaction gas is ejected to the surface of the semiconductor substrate 3. The reaction gas ejection head 10 is brought into close contact with the surface of the semiconductor substrate 3, This is a doughnut-shaped clamp for masking the peripheral portion of the semiconductor substrate 3 with a constant width and having the same shape as the semiconductor substrate 3. The film formation preventing clamp 10 is used for the semiconductor substrate 3
A step is provided over the entire circumference of the inner surface in close contact with the semiconductor substrate, and the inner peripheral portion has the same shape as the semiconductor substrate.
【０００３】次に上記のように構成された気相成長装置
を用いて、その周辺部に密着層をもたない半導体基板３
上に、例えば金属膜を形成する工程について説明する。
まず、加熱ステージ２上に設置された半導体基板３を成
膜温度に加熱する。そして、加熱ステージ２を上昇さ
せ、半導体基板３の周辺部を成膜防止用クランプ１０に
押し当てる。次に、反応ガス噴出ヘッド９から反応ガス
９Ａを噴出させ所望の金属膜を形成する。この時半導体
基板３の周辺部は、一定の幅で成膜防止用クランプ１０
によりマスクされているため、周辺部に反応ガスがアタ
ックすることがなくなる。このようにして半導体基板３
の密着層をもたない周辺部に、金属膜が形成されること
なく、その内周部にのみ金属膜の形成が成される。[0003] Next, using the vapor phase growth apparatus constructed as described above, the semiconductor substrate 3 having no adhesion layer around the periphery thereof is used.
The step of forming, for example, a metal film will be described above.
First, the semiconductor substrate 3 placed on the heating stage 2 is heated to the film formation temperature. Then, the heating stage 2 is raised, and the peripheral portion of the semiconductor substrate 3 is pressed against the clamp 10 for preventing film formation. Next, the reaction gas 9A is ejected from the reaction gas ejection head 9 to form a desired metal film. At this time, the peripheral portion of the semiconductor substrate 3 has a constant width and the film-forming preventing clamp 10 has a constant width.
As a result, the reaction gas does not attack the periphery. Thus, the semiconductor substrate 3
The metal film is formed only on the inner peripheral portion without forming the metal film on the peripheral portion having no adhesion layer.
【０００４】[0004]
【発明が解決しようとする課題】従来の気相成長装置は
以上説明したように半導体基板３の周辺部を除いて、内
部のみに金属膜等を形成することができる。しかしなが
ら、成膜防止用クランプ１０と、マスクすべき半導体基
板３との周辺部に異物が存在した場合は、クランプ１０
が半導体基板３と接触できなくなり、クランプ１０と半
導体基板３との間に隙間が存在する為、基板の周辺部に
も反応ガスが到達し、異物の存在する箇所を中心とし
て、基板の端まで金属膜等が形成されることになる。As described above, in the conventional vapor phase growth apparatus, a metal film or the like can be formed only inside the semiconductor substrate 3 except for the peripheral portion. However, when foreign matter is present around the film formation preventing clamp 10 and the semiconductor substrate 3 to be masked, the clamp 10
Cannot contact the semiconductor substrate 3 and there is a gap between the clamp 10 and the semiconductor substrate 3, so that the reaction gas reaches the peripheral portion of the substrate and reaches the edge of the substrate with the foreign matter as the center. A metal film or the like will be formed.
【０００５】このように半導体基板の端部に迄金属膜等
が形成されると、半導体製造プロセス上、本工程以降の
工程において膜が剥がれてパーティクルを発生し、歩留
まりを低下させる原因となる。また、この従来の方法で
は、周辺部とはいえ半導体基板表面上に成膜防止用クラ
ンプを接触させることになるため、このこともパーティ
クル発生の要因の一つとなる。[0005] When a metal film or the like is formed up to the end of the semiconductor substrate in this manner, in the semiconductor manufacturing process, the film is peeled off in steps after this step, and particles are generated, which causes a reduction in yield. Further, in this conventional method, the film formation preventing clamp is brought into contact with the surface of the semiconductor substrate even at the peripheral portion, and this is also one of the factors of the generation of particles.
【０００６】この発明の目的は、上記のような問題点を
解決するためなされたもので、膜を形成しようとする半
導体基板の周辺部に異物が存在した場合でも、周辺部を
除く内部のみに膜の形成を可能にする気相成長装置を提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems. Even when foreign matter is present in a peripheral portion of a semiconductor substrate on which a film is to be formed, only foreign matters except the peripheral portion are present. It is an object of the present invention to provide a vapor phase growth apparatus capable of forming a film.
【０００７】[0007]
【課題を解決するための手段】本発明の気相成長装置
は、反応室内に設けられ半導体基板を保持する上下駆動
式のステージと、このステージに対向して設けられた反
応ガス噴出ヘッドと、前記半導体基板の周辺部上に一定
の間隔をおいて覆うように設けられ前記半導体基板の周
辺部に不活性ガスを噴出する為の複数の噴出孔を有する
成膜防止用のドーナツ管とを含むことを特徴とするもの
である。According to the present invention, there is provided a vapor phase growth apparatus comprising: a vertically driven stage provided in a reaction chamber for holding a semiconductor substrate; a reactive gas ejection head provided opposed to the stage; A donut tube for preventing film formation, which is provided so as to cover the peripheral portion of the semiconductor substrate at regular intervals and has a plurality of ejection holes for ejecting an inert gas to the peripheral portion of the semiconductor substrate. It is characterized by the following.
【０００８】[0008]
【作用】この発明による成膜防止用のドーナツ管は、そ
の全周に、半導体基板の方向へ設けられたガス噴出口を
有する為、このガス噴出口から不活性ガスが密着層の形
成されていない半導体基板周辺部に噴出され、ドーナツ
管と基板間のカーテンの役目をし、基板上に噴出された
反応ガスが基板の周辺部へ進入するのを防ぐ。また、従
来のように半導体基板と成膜防止用クランプの接触もな
いため、接触によるパーティクルの発生はなくなる。ド
ーナツ管に設けられた不活性ガスの噴出口は、ドーナツ
管のガス導入口へ近い程口径が小さく、導入口から離れ
るにしたがって口径は大きくなっている。そのため、ド
ーナツ管のどの部分においても、噴出される不活性ガス
の流量は同等の値が確保できる。The doughnut tube for preventing film formation according to the present invention has a gas outlet provided in the direction of the semiconductor substrate all around its circumference, so that an inert gas is formed from the gas outlet to form an adhesion layer. It is ejected to the peripheral portion of the semiconductor substrate, acts as a curtain between the donut tube and the substrate, and prevents the reaction gas ejected onto the substrate from entering the peripheral portion of the substrate. Further, since there is no contact between the semiconductor substrate and the film formation preventing clamp as in the related art, the generation of particles due to the contact is eliminated. The diameter of the spout of the inert gas provided in the donut tube is smaller as it is closer to the gas inlet of the donut tube, and larger as it is farther from the inlet. Therefore, the flow rate of the inert gas ejected can be maintained at the same value in any part of the donut tube.
【０００９】[0009]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は本発明の第１の実施例の断面図、図
２はドーナツ管の下面図である。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view of a first embodiment of the present invention, and FIG. 2 is a bottom view of a donut tube.
【００１０】図１を参照すると気相成長装置は、排出口
５Ａ，５Ｂを有し保護ブロック４から主に構成された反
応室１と、この反応室１内に設けられ半導体基板３を保
持する上下駆動式の加熱ステージ２と、このステージ２
に対向して設けられた反応ガス噴出ヘッド９と、半導体
基板３の周辺部に不活性ガスを噴出する為の複数の噴出
孔を有する成膜防止用のドーナツ管６とから主に構成さ
れている。Referring to FIG. 1, the vapor phase growth apparatus holds a reaction chamber 1 having discharge ports 5A and 5B and mainly composed of a protective block 4, and a semiconductor substrate 3 provided in the reaction chamber 1. Vertical drive type heating stage 2 and this stage 2
And a donut tube 6 for preventing film formation, which has a plurality of ejection holes for ejecting an inert gas to the peripheral portion of the semiconductor substrate 3. I have.
【００１１】このドーナツ管６はセラミック製であり図
２に示すように半導体基板３の外周部とほぼ同一形状を
しており、ガス噴出口６Ａはガス導入口６Ｂに近い程小
さく形成されている。そして、このドーナツ管６はガス
導入口６Ｂにおいて保護ブロックに形成された不活性ガ
ス導入口７と接続されている。The donut tube 6 is made of ceramic and has substantially the same shape as the outer peripheral portion of the semiconductor substrate 3 as shown in FIG. 2, and the gas outlet 6A is formed smaller as it is closer to the gas inlet 6B. . The donut tube 6 is connected to an inert gas inlet 7 formed in the protection block at a gas inlet 6B.
【００１２】次に上記のように構成された気相成長装置
を用いて、その周辺部に密着層をもたない半導体基板３
上に金属膜を形成する工程について説明する。まず加熱
ステージ２上に設置された半導体基板３を成膜温度まで
加熱する。そして、加熱ステージ２が半導体基板３とと
もに成膜ポジションまで上昇する。従来の方法では、こ
こで密着層の存在しない半導体基板３の周辺部に成膜防
止用クランプが接触し、周辺部を覆い隠す状態となる
が、本実施例では、半導体基板３と成膜防止用のドーナ
ツ管６との間には一定の距離が保たれている為、接触は
しない。次にドーナツ管６の全体に設けられた不活性ガ
ス噴出口６Ａから半導体基板３の周辺部に向かって、不
活性ガスを噴出する。不活性ガスの流量が安定した時点
で反応ガス噴出ヘッド９から、反応ガス９Ａを半導体基
板３の表面に噴出する事で、半導体基板３の表面に所望
の金属膜が形成される。このとき、未反応ガス等の残留
ガスは、残留ガス排出口５Ａ，５Ｂから反応室１の外部
へ排出される。Next, the semiconductor substrate 3 having no adhesion layer around the periphery thereof is formed by using the vapor phase growth apparatus constructed as described above.
The step of forming a metal film thereon will be described. First, the semiconductor substrate 3 placed on the heating stage 2 is heated to a film forming temperature. Then, the heating stage 2 moves up to the film forming position together with the semiconductor substrate 3. According to the conventional method, the film formation preventing clamp contacts the peripheral portion of the semiconductor substrate 3 where the adhesion layer does not exist, thereby covering the peripheral portion. There is no contact with the donut tube 6 for use because a certain distance is maintained. Next, an inert gas is ejected from an inert gas ejection port 6 </ b> A provided on the entire donut tube 6 toward the periphery of the semiconductor substrate 3. When the flow rate of the inert gas is stabilized, the reaction gas 9A is ejected from the reaction gas ejection head 9 onto the surface of the semiconductor substrate 3, whereby a desired metal film is formed on the surface of the semiconductor substrate 3. At this time, residual gas such as unreacted gas is discharged to the outside of the reaction chamber 1 through the residual gas discharge ports 5A and 5B.
【００１３】また、反応ガスが噴出されている時は、前
記のようにドーナツ管６の不活性ガス噴出口６Ａから密
着層の存在しない半導体基板３の周辺部に不活性ガス８
が噴出されており、反応ガス９Ａが半導体基板３の周辺
部への進入するのを防ぐカーテンの役目をして、周辺部
への成膜を防止している。従って周辺部に異物が存在し
てもこの不活性ガス８は、加熱ステージ２と保護ブロッ
ク４の間に設けられた装置下方に存在する残留ガス排出
口５Ｂに流れて行くため、半導体基板３の周辺部での対
流を防ぎガスの流れを円滑にしている。When the reactive gas is being jetted, the inert gas 8 is discharged from the inert gas jet port 6A of the donut tube 6 to the peripheral portion of the semiconductor substrate 3 where the adhesion layer does not exist, as described above.
Are sprayed out, and serve as a curtain for preventing the reaction gas 9A from entering the peripheral portion of the semiconductor substrate 3, thereby preventing film formation on the peripheral portion. Therefore, even if there is a foreign substance in the peripheral portion, the inert gas 8 flows to the residual gas discharge port 5B located below the apparatus provided between the heating stage 2 and the protection block 4, so that the semiconductor substrate 3 Convection around the periphery is prevented and the gas flow is smooth.
【００１４】本実施例では、前記のように半導体基板３
と成膜防止用のドーナツ管６は接触していないため、両
者のこすれによるパーティクルは発生しない。In this embodiment, as described above, the semiconductor substrate 3
Since the donut tube 6 for preventing film formation is not in contact with the donut tube 6, particles are not generated due to the rubbing of both.
【００１５】図３は本発明の第２の実施例の部分断面図
であり、特にドーナツ管近傍の部分を示している。図３
においてドーナツ管１６Ａは石英から作られており、そ
の平面形状は図２に示したものとほぼ同様である。そし
て特にドーナツ管１６Ａは不活性ガス導入管１６Ｂと一
体的に形成され、保護ブロック４Ａに支持されて配置さ
れるように構成されている。FIG. 3 is a partial sectional view of a second embodiment of the present invention, particularly showing a portion near a donut tube. FIG.
In this case, the donut tube 16A is made of quartz, and its planar shape is almost the same as that shown in FIG. In particular, the donut tube 16A is formed integrally with the inert gas introduction tube 16B, and is configured to be supported and disposed by the protection block 4A.
【００１６】このように構成された第２の実施例によれ
ば、第１の実施例と同様にドーナツ管１６Ａにより半導
体基板３の周辺部への反応ガス９Ａの進入は防止される
為、半導体基板３の周辺部に反応ガスによる膜が形成さ
れることはなくなる。本第２の実施例ではドーナツ管１
６Ａを石英で作っている為、加工がし易く、コストが低
減されるという利点がある。According to the second embodiment having the above-described configuration, as in the first embodiment, the donut tube 16A prevents the reaction gas 9A from entering the periphery of the semiconductor substrate 3 so that the semiconductor gas is prevented. No film is formed around the substrate 3 by the reaction gas. In the second embodiment, the donut tube 1
Since 6A is made of quartz, there is an advantage that processing is easy and cost is reduced.
【００１７】[0017]
【発明の効果】以上のようにこの発明は、半導体基板の
最外周部から、一定の距離をおいて不活性ガスを噴出す
る成膜防止用のドーナツ管を設けることにより、不活性
ガスがその内部全体を通り、その下部全体に設けられた
口径の異なるガス噴出口から、不活性ガスが半導体基板
周辺部に噴出される為、基板表面の周辺部の異物の有無
によることなく、密着層のない半導体基板周辺部への成
膜を防ぐことができるという効果がある。As described above, according to the present invention, by providing the donut tube for film formation prevention, which ejects the inert gas at a constant distance from the outermost peripheral portion of the semiconductor substrate, the inert gas Since the inert gas is ejected to the peripheral part of the semiconductor substrate from the gas ejection ports passing through the entire interior and provided in the entire lower part, the inert gas of the adhesion layer can be formed regardless of the presence or absence of foreign matter on the peripheral part of the substrate surface. There is an effect that it is possible to prevent film formation on the peripheral portion of a semiconductor substrate that does not exist.
【図１】本発明の第１の実施例の断面図。FIG. 1 is a sectional view of a first embodiment of the present invention.
【図２】実施例におけるドーナツ管の下面図。FIG. 2 is a bottom view of the donut tube in the embodiment.
【図３】本発明の第２の実施例のドーナツ管近傍の断面
図。FIG. 3 is a sectional view showing the vicinity of a donut tube according to a second embodiment of the present invention.
【図４】従来の気相成長装置の断面図。FIG. 4 is a cross-sectional view of a conventional vapor phase growth apparatus.
１ 反応室 ２ 加熱ステージ ２Ａ 保持面 ３ 半導体基板 ４，４Ａ 保護ブロック ５，５Ａ，５Ｂ 排出口 ６，１６Ａ ドーナツ管 ６Ａ ガス噴出口 ６Ｂ ガス導入口 ７ 不活性ガス導入口 ８ 不活性ガス ９ 反応ガス噴出ヘッド ９Ａ 反応ガス １０ 成膜防止用クランプ １６Ｂ 不活性ガス導入管 1 Reaction Chamber 2 Heating Stage 2A Holding Surface 3 Semiconductor Substrate 4,4A Protection Block 5,5A, 5B Discharge Port 6,16A Donut Tube 6A Gas Jet 6B Gas Inlet 7 Inert Gas Inlet 8 Inert Gas 9 Reactive Gas Ejection head 9A Reaction gas 10 Film formation prevention clamp 16B Inert gas introduction pipe
Claims (3)
る上下駆動式のステージと、このステージに対向して設
けられた反応ガス噴出ヘッドと、前記半導体基板の周辺
部上に一定の間隔をおいて覆うように設けられ前記半導
体基板の周辺部に不活性ガスを噴出する為の複数の噴出
孔を有する成膜防止用のドーナツ管とを含むことを特徴
とする気相成長装置。1. A vertical drive type stage provided in a reaction chamber for holding a semiconductor substrate, a reactive gas ejection head provided opposite to the stage, and a fixed distance above a peripheral portion of the semiconductor substrate. And a doughnut tube for preventing film formation having a plurality of ejection holes for ejecting an inert gas to a peripheral portion of the semiconductor substrate.
っている請求項１記載の気相成長装置。2. The vapor phase growth apparatus according to claim 1, wherein the diameter of the ejection hole of the donut tube varies depending on the position.
ミックから構成されている請求項１又は請求項２記載の
気相成長装置。3. The vapor phase growth apparatus according to claim 1, wherein the donut tube for preventing film formation is made of quartz or ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7032222A JP2665177B2 (en) | 1995-02-21 | 1995-02-21 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7032222A JP2665177B2 (en) | 1995-02-21 | 1995-02-21 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08227857A true JPH08227857A (en) | 1996-09-03 |
| JP2665177B2 JP2665177B2 (en) | 1997-10-22 |
Family
ID=12352932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7032222A Expired - Fee Related JP2665177B2 (en) | 1995-02-21 | 1995-02-21 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2665177B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100470986B1 (en) * | 2000-03-14 | 2005-03-07 | 주성엔지니어링(주) | High vacuum apparatus for use in semiconductor device fabrication and method of forming an epitaxial layer using the same |
| JP2008311507A (en) * | 2007-06-15 | 2008-12-25 | Sharp Corp | Vapor growth device, and vapor growth method |
| KR101312544B1 (en) * | 2011-12-26 | 2013-09-30 | 주식회사 엘지실트론 | Epitaxial Reactor |
| CN113832448A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Semiconductor film deposition equipment and semiconductor film coating method |
| EP4253596A4 (en) * | 2020-11-25 | 2024-03-20 | Beijing NAURA Microelectronics Equipment Co., Ltd. | Semiconductor process apparatus |
-
1995
- 1995-02-21 JP JP7032222A patent/JP2665177B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100470986B1 (en) * | 2000-03-14 | 2005-03-07 | 주성엔지니어링(주) | High vacuum apparatus for use in semiconductor device fabrication and method of forming an epitaxial layer using the same |
| JP2008311507A (en) * | 2007-06-15 | 2008-12-25 | Sharp Corp | Vapor growth device, and vapor growth method |
| KR101312544B1 (en) * | 2011-12-26 | 2013-09-30 | 주식회사 엘지실트론 | Epitaxial Reactor |
| CN113832448A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Semiconductor film deposition equipment and semiconductor film coating method |
| CN113832448B (en) * | 2020-06-23 | 2023-06-09 | 拓荆科技股份有限公司 | Semiconductor film deposition equipment and semiconductor film coating method |
| EP4253596A4 (en) * | 2020-11-25 | 2024-03-20 | Beijing NAURA Microelectronics Equipment Co., Ltd. | Semiconductor process apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2665177B2 (en) | 1997-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5298465A (en) | Plasma etching system | |
| US7879183B2 (en) | Apparatus and method for front side protection during backside cleaning | |
| JP2641373B2 (en) | Vacuum deposition equipment | |
| TW202028525A (en) | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate | |
| JPS63227011A (en) | Chemical vapor deposition system | |
| JPH08236451A (en) | Edge film forming control for semiconductor substrate | |
| JP2002518601A (en) | Substrate support device having purge gas channel and pump system | |
| US6582522B2 (en) | Emissivity-change-free pumping plate kit in a single wafer chamber | |
| KR20030081177A (en) | Apparatus and method for single-wafer-processing type cvd | |
| KR102438139B1 (en) | Process kit for a high throughput processing chamber | |
| JPH07172985A (en) | Process and apparatus for forming tungsten silicide on semiconductor wafer by using dichlorosilane gas | |
| US6187080B1 (en) | Exhaust gas treatment apparatus including a water vortex means and a discharge pipe | |
| KR20000048586A (en) | Apparatus for reducing polymer deposition on substrate support | |
| JP2665177B2 (en) | Vapor phase growth equipment | |
| CN112695303A (en) | Film deposition device and film deposition method | |
| US20040129210A1 (en) | Gas nozzle for substrate processing chamber | |
| KR102584068B1 (en) | Cleaning method and substrate processing device | |
| KR100686724B1 (en) | Chemical vapor deposition apparatus | |
| US20040144492A1 (en) | Plasma processing device | |
| JPH0456770A (en) | Method for cleaning plasma cvd device | |
| KR100364571B1 (en) | Reactor for depositing thin film on wafer | |
| JP3407400B2 (en) | Thin film vapor deposition equipment | |
| JPH0936053A (en) | Manufacture of semiconductor | |
| KR100864868B1 (en) | Apparatus for depositing thin film on a wafer | |
| JP2004296659A (en) | Substrate treating apparatus and manufacturing method of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970520 |
|
| LAPS | Cancellation because of no payment of annual fees |