CN112695303A - Film deposition device and film deposition method - Google Patents

Film deposition device and film deposition method Download PDF

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Publication number
CN112695303A
CN112695303A CN201911011931.0A CN201911011931A CN112695303A CN 112695303 A CN112695303 A CN 112695303A CN 201911011931 A CN201911011931 A CN 201911011931A CN 112695303 A CN112695303 A CN 112695303A
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shielding
wafer
spray
edge
film deposition
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Chinese (zh)
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江向红
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN201911011931.0A priority Critical patent/CN112695303A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a film layer deposition device and a film layer deposition method. The film deposition apparatus includes: the bearing part is used for bearing the wafer; the shower head is arranged above the bearing part and used for spraying reaction gas to the wafer on the surface of the bearing part, and the reaction gas is used for forming a film layer on the surface of the wafer; and the shielding structure is used for shielding the edge area of the spray head so as to reduce the concentration of the reaction gas in the edge area of the wafer. On one hand, the uniformity of the thickness of the film layer is improved; on the other hand, in the subsequent etching process, the film layer in the edge area can be fully etched, the film layer residue is avoided, and the etching quality is improved.

Description

Film deposition device and film deposition method
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a film layer deposition device and a film layer deposition method.
Background
In a manufacturing process of a semiconductor device such as a Dynamic Random Access Memory (DRAM), etching is a crucial step. The existing Etching process mainly includes two modes of Wet Etching (Wet Etching) and Dry Etching (Dry Etching). Dry etching generally refers to an etching technique for performing Pattern Transfer (Pattern Transfer) by generating plasma containing charged particles such as ions and electrons, and neutral atoms, molecules, and radicals having high chemical activity by Glow Discharge (Glow Discharge) method.
In both the dry etching process and the wet etching process, the pattern is transferred downwards through the plurality of mask layers and finally formed on the surface of the wafer. However, during the deposition of the mask layer, the thickness of the edge region of the film layer formed on the wafer surface is often greater than that of the central region due to the different processing conditions to which the central region and the edge region of the wafer are exposed. Thus, on the one hand, the thickness uniformity of the film layer is reduced; on the other hand, in the process of transferring the pattern downwards, due to uneven thickness of the film layer, incomplete etching may occur in the edge region of the film layer, which affects the downward transfer of the pattern, and finally, the pattern formed on the surface of the wafer has a large difference from the designed pattern, which affects the yield of the final semiconductor device, and even results in the rejection of the wafer in severe cases.
Therefore, how to improve the uniformity of the thickness of the film layer on the surface of the wafer and avoid the incomplete etching of the edge of the film layer to improve the etching quality is a technical problem to be solved.
Disclosure of Invention
The invention provides a film layer deposition device and a film layer deposition method, which are used for solving the problem that the edge etching of a film layer is incomplete easily due to the fact that the film layer is not uniform in thickness in the prior art.
In order to solve the above problems, the present invention provides a film layer deposition apparatus including:
the bearing part is used for bearing the wafer;
the shower head is arranged above the bearing part and used for spraying reaction gas to the wafer on the surface of the bearing part, and the reaction gas is used for forming a film layer on the surface of the wafer;
and the shielding structure is used for shielding the edge area of the spray head so as to reduce the concentration of the reaction gas in the edge area of the wafer.
Optionally, a surface of the spray head facing the bearing part is a spray surface, and the spray surface is provided with a plurality of spray holes; the shielding structure includes:
the shielding parts are used for sealing the spray holes;
and the driver is connected with the shielding piece and is used for driving the shielding piece to move towards the edge of the spraying surface.
Optionally, the number of the shielding members is multiple, the shielding members are distributed around the periphery of the spraying surface, and the end portions of the adjacent shielding members can be connected in a clamping manner;
the driver is connected with the plurality of the shielding parts and used for driving the plurality of the shielding parts to synchronously move towards the spraying surface, so that the plurality of the shielding parts are mutually connected to form a shielding ring.
Optionally, the plurality of spray holes are annularly arranged to form a plurality of spray rings, and the plurality of spray rings are sequentially nested along a direction in which the center of the spray surface points to the edge of the spray surface;
the shield ring closes at least the nozzle holes in the outermost spray ring.
Optionally, the shielding members are arc-shaped, a bayonet is arranged at a first end of each shielding member, a lug is arranged at a second end opposite to the first end, and two adjacent shielding members are connected with the lug in a clamping manner through the bayonet.
Optionally, the method further includes:
the bearing part is positioned in the reaction chamber;
the annular support frame is used for supporting the spray head, and the reaction gas sprayed by the spray head enters the reaction chamber through an annular opening in the annular support frame;
the shielding piece and the driver are embedded in the annular supporting frame.
In order to solve the above problems, the present invention also provides a film layer deposition method, comprising the steps of:
transmitting reaction gas for forming a film layer to the surface of a wafer through a spray head;
and shielding the edge area of the spray head, and reducing the concentration of the reaction gas in the edge area of the wafer.
Optionally, before shielding the edge area of the nozzle, the method further includes the following steps:
and judging whether the time for the nozzle to transmit the reaction gas to the surface of the wafer reaches a first preset time, if so, shielding the edge area of the nozzle.
Optionally, a surface of the nozzle facing the wafer is a spraying surface, and the spraying surface has a plurality of spray holes; the specific steps of masking the edge region of the showerhead include:
providing at least one shielding part;
and driving the shielding piece to move towards the edge of the spraying surface to close the spraying hole in the edge area of the spraying surface.
Optionally, the number of the shielding members is multiple, and the multiple shielding members are distributed around the periphery of the ejection face; the specific steps of driving the shutter towards the edge of the ejection face include:
driving a plurality of the shutters to move synchronously toward the ejection face so that the shutters are connected to each other to form a shutter ring.
Optionally, the plurality of spray holes are annularly arranged to form a plurality of spray rings, and the plurality of spray rings are sequentially nested along a direction in which the center of the spray surface points to the edge of the spray surface;
the shield ring closes at least the nozzle holes in the outermost spray ring.
Optionally, after shielding the edge area of the nozzle, the method further includes the following steps:
and judging whether the time for closing the spray holes by the shielding part reaches a second preset time, if so, driving the shielding part to move away from the spray surface, and opening the spray holes in the edge area of the spray surface.
According to the film deposition device and the film deposition method provided by the invention, the edge area of the spray head is shielded in the film deposition process, so that the concentration of the reaction gas in the edge area of the wafer is reduced, the film thickness of the edge area of the surface of the wafer is controlled, and on one hand, the uniformity of the film thickness is improved; on the other hand, in the subsequent etching process, the film layer in the edge area can be fully etched, the film layer residue is avoided, and the etching quality is improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a film deposition apparatus in a first state according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a film deposition apparatus in a second state according to an embodiment of the present invention;
FIGS. 3A-3C are schematic diagrams of a top view of a film deposition apparatus from a first state to a second state in accordance with an embodiment of the present invention;
FIG. 4 is an exploded view of a film deposition apparatus according to an embodiment of the present invention;
FIG. 5 is a graph of the thickness profile of a film formed in accordance with an embodiment of the present invention;
FIG. 6 is a flow chart of a method of film layer deposition in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of a film deposition apparatus and a film deposition method according to the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional structure diagram of a film deposition apparatus in a first state according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional structure diagram of a film deposition apparatus in a second state according to an embodiment of the present invention, fig. 3A to 3C are schematic top view structural diagrams of the film deposition apparatus from the first state to the second state according to an embodiment of the present invention, and fig. 4 is an exploded structural diagram of the film deposition apparatus according to an embodiment of the present invention. As shown in fig. 1, fig. 2, fig. 3A to 3C, and fig. 4, the film deposition apparatus according to the present embodiment includes:
a carrier 10 for carrying a wafer 11;
a showerhead 12 disposed above the carrier 10 for ejecting a reaction gas to the wafer 11 on the surface of the carrier 10, wherein the reaction gas is used to form a film on the surface of the wafer 11;
and a shielding structure for shielding an edge region of the showerhead 12 to reduce the concentration of the reactive gas in the edge region of the wafer 11.
Specifically, the film deposition apparatus has a reaction chamber 17 surrounded by a housing 16, and the carrier 10 is located in the reaction chamber 17 for carrying the wafer 11. Heating elements such as electric heating wires can be embedded in the carrying part 10 for heating the wafer 11 on the surface of the carrying part 10. In an axial direction (i.e., a Y-axis direction in fig. 1 and 2) along the reaction chamber 17, the showerhead 12 is disposed above the carrier 10, and an axis of the showerhead 12 coincides with an axis of the carrier 10, that is, a projection of a center of an ejection surface 121 of the showerhead 12 coincides with a center of a carrying surface of the carrier 10 for carrying the wafer 11. The projection of the spray surface of the spray head 12 in the Y-axis direction at least covers the surface of the wafer 11. The reaction gas is sprayed to the wafer 11 from the collision head 12 and deposited on the surface of the wafer 11 to form the film layer.
In the embodiment, the shielding structure is arranged, so that the shielding structure can shield the edge area of the nozzle 12, and since the nozzle 12 sprays the reaction gas along the Y-axis negative direction, the shielding of the edge area can reduce the concentration of the reaction gas transmitted to the edge area of the wafer 10, thereby reducing the film thickness of the edge area of the surface of the wafer 10, so that the film thickness of the edge area of the surface of the wafer is approximately consistent with the film thickness of the central area, and on one hand, the uniformity of the film thickness deposited on the surface of the wafer can be improved; on the other hand, in the subsequent etching process of the film layer, the film layer in the edge area of the wafer can be fully etched, the problem of film layer residue in the edge area is avoided, and therefore the etching quality is improved.
The specific structure of the shielding structure is not limited in this embodiment, as long as shielding of the edge region of the showerhead 12 can be achieved, and the reduction is performed to avoid the reactive gas ejected from the edge region of the showerhead 12, thereby reducing the concentration of the reactive gas in the edge region of the surface of the wafer 11.
Optionally, the surface of the spray head 12 facing the carrier 10 is a spray surface 121, and the spray surface 121 has a plurality of spray holes 13; the shielding structure includes:
a plurality of shielding members 15, wherein the shielding members 15 are used for closing a plurality of spray holes 13;
and the driver 41 is connected with the shielding piece 15 and used for driving the shielding piece 15 to move towards the edge of the spraying surface 121.
The driver 41 is not visible at the angle shown in fig. 4 and is therefore indicated in dashed lines. Specifically, the shield 15 is initially located at the periphery of the ejection face 121 of the ejection head 12, as shown in fig. 1; when shielding of the edge area of the injection surface 121 is required, the driver 41 drives the shielding member 15 to move toward the injection surface 121 until the shielding member 15 shields a plurality of injection holes 13 of the edge area of the injection surface 121, as shown in fig. 2. The number of the nozzle holes 13 shielded by the shielding member 15 may be one or more. The term "plurality" as used in the present embodiment means two or more. The shape and/or size of the shielding member 15 and the distance that the driver drives the shielding member 15 to move can be adjusted by those skilled in the art according to actual needs, so that the shielding member 15 can shield a preset number of the spray holes 13 at the edge of the spray face 121, or the shielding member 15 can shield an area at the edge of the spray face 121 with a preset size. The specific type of the driver 41, which can be, but is not limited to, a stepper motor, can be selected by those skilled in the art according to actual needs.
In the present embodiment, the shielding member 15 is used to shield the surface of the nozzle hole 13 from being parallel to the plane of the injection surface 121. In other embodiments, a person skilled in the art may also set the surface of the shielding member for shielding the nozzle hole to be inclined by a preset angle relative to the plane of the injection surface 121 according to actual needs, as long as the nozzle hole can be closed.
The material of the shield 15 is preferably a high-resistance ceramic material having a volume resistivity of greater than or equal to 1012 Ω · m and a relative permittivity of less than or equal to 30, so that the shield 15 is suitable for use in a temperature range of-55 ℃ to 860 ℃.
Optionally, the number of the shielding members 15 is multiple, and the multiple shielding members 15 are distributed around the periphery of the ejection surface 121, and the end portions of the adjacent shielding members 15 can be connected in a clamping manner;
the driver 41 is connected to a plurality of the shutters 15 for driving the plurality of the shutters 15 to move synchronously toward the ejection face 121, so that the plurality of the shutters 15 are connected to each other to form the shutter ring 30.
Optionally, the plurality of nozzle holes 13 are annularly arranged to form a plurality of injection rings, and the plurality of injection rings are sequentially nested along a direction in which the center of the injection surface 121 points to the edge of the injection surface 121;
the shield ring 30 closes at least the nozzle holes 13 in the outermost jet ring.
Optionally, the shielding member 15 is arc-shaped, a first end of the shielding member 15 has a bayonet 31, a second end opposite to the first end has a protrusion 32, and two adjacent shielding members 15 are connected to the protrusion 32 through the bayonet 31 in a snap-fit manner.
Specifically, the plurality of injection holes 13 on the injection surface 121 are arranged to form a plurality of circles, each circle serving as one injection ring, that is, each injection ring is surrounded by a plurality of injection holes. The inner diameters of the plurality of spray rings are different from each other so that the plurality of spray rings can be sequentially nested in a direction in which the center of the spray surface 121 points to the edge of the spray surface 121. In this embodiment, all the nozzle holes 13 on the injection surface 121 may be arranged together to form a plurality of injection rings, and the plurality of rings may be sequentially nested along a radial direction of the injection surface 121 (i.e., along a direction in which a center of the injection surface 121 points to an edge of the injection surface 121); for example, a plurality of the nozzle holes located at the edge region of the injection surface 121 are arranged to form a multi-turn injection ring, while the nozzle holes located at the central region of the injection surface 121 are arranged radially (as shown in fig. 3A), and the multi-turn injection rings located at the edge region are sequentially nested along the radial direction of the injection surface 121. The term "multiple turns" as used in the present embodiment means two or more turns.
The following description will be given taking as an example that the shape of the shielding member 15 is a circular arc and the number of the shielding members 15 in the shielding structure is 4. At the initial moment of the film deposition process, a plurality of the shields 15 are distributed around the periphery of the ejection face 121, and the reaction gas is ejected from all the ejection holes 13 on the ejection face 121 toward the surface of the wafer 11, i.e., all the ejection holes 13 on the ejection face 121 are in an open state, as shown in fig. 3A. After the state shown in fig. 3A continues for the first preset time, the driver 41 starts to drive 4 of the shutters 15 to move synchronously toward the edge of the ejection face 121, as shown in fig. 3B. Each arrow direction in fig. 3B indicates a movement direction of the shutter 15 corresponding thereto. The first preset time is determined by the film thickness of the film layer to be formed on the surface of the wafer 11. When four shutters 15 move to the edge of the ejection face 121, the adjacent shutters 15 are engaged with the protrusions 32 through the bayonets 31 at the ends to form a shutter ring 30 as shown in fig. 3C. The shielding member 30 shields at least all the nozzle holes 13 located at the outermost circle of the injection surface 121. By adjusting the driving force of the driver 41, the clamping force between the adjacent shields 15 can be adjusted, and the reaction gas is prevented from being transmitted from the gap between the adjacent shields 15 to the edge region of the surface of the wafer 11.
In other specific embodiments, the following may be provided: the number of the shielding members 15 is plural, and the plural shielding members 15 are distributed around the periphery of the ejection face 121; the driver 41 is connected to a plurality of the shielding members 15, and is configured to drive at least one of the shielding members 15 to move toward the spraying surface 121, so as to close the plurality of spraying holes 13 on the spraying surface 121. That is, the driver 41 can be controlled to drive part of the shields 15 in the plurality of shields 15 to move towards the injection surface 121 as required, so as to shield part of the edge area of the injection surface 121, and thus flexible adjustment of the number of the injection holes to be closed can be realized.
FIG. 5 is a graph of the thickness profile of a film formed in accordance with an embodiment of the present invention. As can be seen from fig. 5, the thickness of the film layer at the edge region of the wafer 11 can be made to be close to the thickness of the film layer at the central region of the wafer 11 by shielding the nozzle 13 at the edge region of the ejection surface 121.
Optionally, the film deposition apparatus further includes:
a reaction chamber 17, wherein the bearing part 10 is positioned in the reaction chamber 17;
an annular support 40 for supporting the showerhead 12, the reaction gas injected from the showerhead 12 entering the reaction chamber 17 through an annular opening in the annular support 40;
the shield 15 and the driver 41 are embedded in the annular support frame 40.
Only a partial structure of the annular support frame 40 is shown in fig. 4. Taking the example of the shielding structure comprising 4 of the shields, only a quarter of the ring support 40 is shown in fig. 4. The shielding member 15 and the driver 41 are embedded in the casing interlayer of the annular supporting frame 40, and when the edge region of the spray head 12 needs to be shielded, the driver 41 drives the shielding member 15 to extend out of the casing interlayer of the annular supporting frame 40; when it is no longer necessary to shield the edge region of the showerhead 12, the driver 41 can also drive the shield 15 to retract into the housing interlayer of the annular support 40, the nozzle holes 13 of the edge region of the showerhead 12 are opened again, and the reaction gas can be transmitted to the edge of the wafer 11 from the nozzle holes 13 of the edge again.
Furthermore, the present embodiment provides a film deposition method, and fig. 6 is a flowchart of the film deposition method according to the present embodiment. The film deposition method provided by the present embodiment may be implemented by using the film deposition apparatus shown in fig. 1, fig. 2, fig. 3A to fig. 3C, and fig. 4. As shown in fig. 1-2, 3A-3C, 4 and 6, the film deposition method according to the present embodiment includes the following steps:
step S61, transmitting the reaction gas for forming the film to the surface of a wafer 11 through a showerhead 12;
step S62, shielding the edge region of the showerhead 12, and reducing the concentration of the reaction gas in the edge region of the wafer 11.
Optionally, before shielding the edge region of the nozzle 12, the method further includes the following steps:
and judging whether the time for the shower nozzle 12 to transmit the reaction gas to the surface of the wafer 11 reaches a first preset time, if so, shielding the edge area of the shower nozzle 12.
Optionally, the surface of the nozzle 12 facing the wafer 11 is a spraying surface 121, and the spraying surface 121 has a plurality of spray holes 13; the specific steps of masking the edge area of the nozzle 12 include:
providing at least one shield 15;
the shutter 15 is driven to move toward the edge of the ejection face 121, closing the ejection holes 13 in the edge area of the ejection face 121.
Optionally, the number of the shielding members 15 is plural, and the plural shielding members 15 are distributed around the periphery of the ejection face 121; the specific steps of driving the shutter 15 towards the edge of the ejection face 121 include:
the plurality of shutters 15 are driven to move synchronously toward the ejection face 121, so that the plurality of shutters 15 are connected to each other to form a shutter ring 30.
Optionally, the plurality of nozzle holes 13 are annularly arranged to form a plurality of injection rings, and the plurality of injection rings are sequentially nested along a direction in which the center of the injection surface 121 points to the edge of the injection surface 121;
the shield ring 30 closes at least the nozzle holes 13 in the outermost jet ring.
Optionally, after shielding the edge area of the nozzle 12, the method further includes the following steps:
and judging whether the time for closing the spray hole 13 by the shielding part 15 reaches a second preset time, if so, driving the shielding part 15 to move away from the spray surface 121, and opening the spray hole 13 positioned in the edge area of the spray surface 121.
Specifically, by controlling the time when the shielding member 15 shields the nozzle 13 at the edge of the spraying surface 121, the total amount of the reaction gas transmitted to the edge of the wafer 11 can be adjusted, so as to control the thickness of the film layer at the edge of the wafer 11.
According to the film deposition device and the film deposition method provided by the embodiment of the invention, the edge area of the spray head is shielded in the film deposition process, so that the concentration of the reaction gas in the edge area of the wafer is reduced, and the film thickness in the edge area of the surface of the wafer is controlled, so that on one hand, the uniformity of the film thickness is improved; on the other hand, in the subsequent etching process, the film layer in the edge area can be fully etched, the film layer residue is avoided, and the etching quality is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (12)

1. A film layer deposition apparatus, comprising:
the bearing part is used for bearing the wafer;
the shower head is arranged above the bearing part and used for spraying reaction gas to the wafer on the surface of the bearing part, and the reaction gas is used for forming a film layer on the surface of the wafer;
and the shielding structure is used for shielding the edge area of the spray head so as to reduce the concentration of the reaction gas in the edge area of the wafer.
2. The film deposition apparatus of claim 1, wherein a surface of the showerhead facing the carrier is a spray surface having a plurality of spray holes; the shielding structure includes:
the shielding parts are used for sealing the spray holes;
and the driver is connected with the shielding piece and is used for driving the shielding piece to move towards the edge of the spraying surface.
3. The film deposition apparatus of claim 2, wherein the number of the shielding members is plural, and the plural shielding members are distributed around the periphery of the ejection face, and the end portions of the adjacent shielding members can be connected in a snap fit manner;
the driver is connected with the plurality of the shielding parts and used for driving the plurality of the shielding parts to synchronously move towards the spraying surface, so that the plurality of the shielding parts are mutually connected to form a shielding ring.
4. The film deposition apparatus of claim 3, wherein the plurality of nozzles are annularly arranged to form a plurality of nozzle rings, and the plurality of nozzle rings are sequentially nested along a direction from the center of the nozzle face to the edge of the nozzle face;
the shield ring closes at least the nozzle holes in the outermost spray ring.
5. The film deposition apparatus of claim 3, wherein the shielding member has a circular arc shape, a first end of the shielding member has a bayonet, a second end of the shielding member opposite to the first end has a protrusion, and two adjacent shielding members are connected to the protrusion through the bayonet.
6. The film deposition apparatus of claim 3, further comprising:
the bearing part is positioned in the reaction chamber;
the annular support frame is used for supporting the spray head, and the reaction gas sprayed by the spray head enters the reaction chamber through an annular opening in the annular support frame;
the shielding piece and the driver are embedded in the annular supporting frame.
7. A film layer deposition method, comprising the steps of:
transmitting reaction gas for forming a film layer to the surface of a wafer through a spray head;
and shielding the edge area of the spray head, and reducing the concentration of the reaction gas in the edge area of the wafer.
8. The film deposition method as claimed in claim 7, further comprising the following steps before masking the edge region of the showerhead:
and judging whether the time for the nozzle to transmit the reaction gas to the surface of the wafer reaches a first preset time, if so, shielding the edge area of the nozzle.
9. The film deposition method of claim 7, wherein a surface of the showerhead facing the wafer is a spray surface having a plurality of spray holes; the specific steps of masking the edge region of the showerhead include:
providing at least one shielding part;
and driving the shielding piece to move towards the edge of the spraying surface to close the spraying hole in the edge area of the spraying surface.
10. The film deposition method of claim 9, wherein the shielding member is plural in number, and the plural shielding members are distributed around the periphery of the ejection face; the specific steps of driving the shutter towards the edge of the ejection face include:
driving a plurality of the shutters to move synchronously toward the ejection face so that the shutters are connected to each other to form a shutter ring.
11. The film deposition method of claim 10, wherein the plurality of nozzles are annularly arranged to form a plurality of nozzle rings, and the plurality of nozzle rings are sequentially nested along a direction from a center of the nozzle face to an edge of the nozzle face;
the shield ring closes at least the nozzle holes in the outermost spray ring.
12. The film deposition method as claimed in claim 9, further comprising the following steps after masking the edge region of the showerhead:
and judging whether the time for closing the spray holes by the shielding part reaches a second preset time, if so, driving the shielding part to move away from the spray surface, and opening the spray holes in the edge area of the spray surface.
CN201911011931.0A 2019-10-23 2019-10-23 Film deposition device and film deposition method Pending CN112695303A (en)

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CN201911011931.0A CN112695303A (en) 2019-10-23 2019-10-23 Film deposition device and film deposition method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115074697A (en) * 2022-06-29 2022-09-20 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device
CN116288269A (en) * 2023-02-20 2023-06-23 拓荆科技(上海)有限公司 Thin film deposition equipment and thin film deposition method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115074697A (en) * 2022-06-29 2022-09-20 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device
CN115074697B (en) * 2022-06-29 2023-09-26 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device
CN116288269A (en) * 2023-02-20 2023-06-23 拓荆科技(上海)有限公司 Thin film deposition equipment and thin film deposition method

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