JPH0821578B2 - Microwave plasma generator - Google Patents

Microwave plasma generator

Info

Publication number
JPH0821578B2
JPH0821578B2 JP2057956A JP5795690A JPH0821578B2 JP H0821578 B2 JPH0821578 B2 JP H0821578B2 JP 2057956 A JP2057956 A JP 2057956A JP 5795690 A JP5795690 A JP 5795690A JP H0821578 B2 JPH0821578 B2 JP H0821578B2
Authority
JP
Japan
Prior art keywords
discharge tube
cylindrical discharge
microwave
plasma generator
permanent magnets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2057956A
Other languages
Japanese (ja)
Other versions
JPH03261137A (en
Inventor
▲あきら▼ 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP2057956A priority Critical patent/JPH0821578B2/en
Publication of JPH03261137A publication Critical patent/JPH03261137A/en
Publication of JPH0821578B2 publication Critical patent/JPH0821578B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はマイクロ波プラズマ発生装置、特に半導体集
積回路製造において用いるマイクロ波プラズマ発生装置
に関するものである。
Description: TECHNICAL FIELD The present invention relates to a microwave plasma generator, and more particularly to a microwave plasma generator used in the manufacture of semiconductor integrated circuits.

〔従来の技術〕[Conventional technology]

半導体集積回路素子製造においてはドライエッチング
技術が多用される傾向にあり、その一つにマイクロ波プ
ラズマエッチング方法がある。そのための装置としては
例えば特開昭61−131454号公報に示されるものがある。
Dry etching technology tends to be frequently used in the manufacture of semiconductor integrated circuit elements, and one of them is a microwave plasma etching method. An apparatus for that purpose is disclosed in, for example, Japanese Patent Laid-Open No. 61-131454.

このような装置は第3図に示す通りであり、中央の放
電室21はマイクロ波を通すために誘電体(石英又はアル
ミナ)の窓22で真空封止され、放電室21の下方に試料23
が電気的に絶縁されて配置され、放電室21から試料23に
かけてはソレノイドコイル24と永久磁石25によりミラー
磁場が印加され、放電室21とエッチング室26は高真空に
排気され、エッチングガスはガス導入管27から矢印方向
に所定のガス圧力で導入され、マグネトロン28で発生し
た2.45GHzのマイクロ波は、矩形導波管29、円形導波管3
0を通って放電管21に導入され、マイクロ波放電が発生
する。
Such a device is as shown in FIG. 3, and the central discharge chamber 21 is vacuum-sealed with a dielectric (quartz or alumina) window 22 for passing microwaves, and a sample 23 is provided below the discharge chamber 21.
Are electrically insulated, a mirror magnetic field is applied from the discharge chamber 21 to the sample 23 by the solenoid coil 24 and the permanent magnet 25, the discharge chamber 21 and the etching chamber 26 are evacuated to a high vacuum, and the etching gas is a gas. The 2.45 GHz microwaves introduced by the magnetron 28 from the introduction pipe 27 in the direction of the arrow at a predetermined gas pressure are rectangular waveguide 29, circular waveguide 3
It is introduced into the discharge tube 21 through 0 and a microwave discharge is generated.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

然しながらこのような従来の装置では放電室21の外径
が大きいときは所望の濃密さで一様なプラズマを発生出
来ない欠点があった。
However, such a conventional device has a drawback that uniform plasma cannot be generated at a desired density when the outer diameter of the discharge chamber 21 is large.

本発明は上記の欠点を除くようにしたものである。 The present invention has been made to eliminate the above disadvantages.

〔課題を解決するための手段〕[Means for solving the problem]

本発明のマイクロ波プラズマ発生装置は、円筒状放電
管と、この円筒状放電管の内周面に円周方向に互いに離
間して配置した軸方向に延びる複数の永久磁石と、この
永久磁石相互間で露出した上記円筒状放電管の周壁に貫
通形成せしめた複数のマイクロ波入力ポートと、上記複
数の入力ポートから上記円筒状放電管内にマイクロ波を
導入するため上記円筒状放電管外に設けた複数のマイク
ロ波発生手段と、上記円筒状放電管内に配置した試料保
持手段とを有し、上記永久磁石は上記円筒状放電管の円
周方向にN,Sに着磁され、且つ互いに対向する磁石面が
互いに同一極性とされていることを特徴とする。
The microwave plasma generator of the present invention comprises a cylindrical discharge tube, a plurality of axially-extending permanent magnets circumferentially spaced from each other on the inner peripheral surface of the cylindrical discharge tube, and the permanent magnets. A plurality of microwave input ports penetratingly formed in the peripheral wall of the cylindrical discharge tube exposed in between, and provided outside the cylindrical discharge tube for introducing microwaves into the cylindrical discharge tube from the plurality of input ports. A plurality of microwave generating means and a sample holding means arranged in the cylindrical discharge tube, the permanent magnet is magnetized N, S in the circumferential direction of the cylindrical discharge tube, and opposed to each other. It is characterized in that the magnet surfaces to be magnetized have the same polarity.

〔作 用〕[Work]

本発明のマイクロ波プラズマ発生装置においてはマイ
クロ波が放電管の管壁より中央部に導入され、磁力線と
の相互作用により放電するようになる。その結果効果的
にマイクロ波を導入出来る。更に複数のマイクロ波を同
時に複数のマイクロ波入力ポートより導入することによ
り大口径の濃密な一様プラズマを発生出来る。
In the microwave plasma generator of the present invention, microwaves are introduced into the central portion from the tube wall of the discharge tube, and discharge is generated by the interaction with the magnetic lines of force. As a result, microwaves can be effectively introduced. Further, by introducing a plurality of microwaves simultaneously from a plurality of microwave input ports, a dense uniform plasma with a large diameter can be generated.

〔実 施 例〕〔Example〕

以下図面によって本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.

本発明においては第1図,第2図に示すように放電管
1の内周面に軸方向に延びる断面矩形状の永久磁石2を
複数個、例えば8個、円周方向に互いに離間して配置
し、この各永久磁石2を上記放電管1の円周方向にN,S
に且つ互いに隣接する永久磁石2の磁石面が同一極性と
なるように着磁せしめると共に、上記永久磁石2が配置
されていない上記放電管1の周壁に複数個の矩形状のマ
イクロ波入力ポート3を貫通形成せしめる。
In the present invention, as shown in FIGS. 1 and 2, a plurality of permanent magnets 2 having a rectangular cross-section extending in the axial direction, for example, eight, are spaced apart from each other in the circumferential direction on the inner peripheral surface of the discharge tube 1. The permanent magnets 2 are arranged in the circumferential direction of the discharge tube 1 by N, S
And magnetizing so that the magnet surfaces of the adjacent permanent magnets 2 have the same polarity, and a plurality of rectangular microwave input ports 3 are provided on the peripheral wall of the discharge tube 1 where the permanent magnets 2 are not arranged. To form a through hole.

本発明のマイクロ波プラズマ発生装置は上記のような
構成であるから1つ又は複数のマグネトロン28で発生し
たマイクロ波を上記1つ又は複数のマイクロ波入力ポー
ト3を介して上記放電管1の外周側から内周側に導入せ
しめれば上記永久磁石2の磁力線の影響により上記マイ
クロ波は放電管1の外径が大きくても放電管1の中央部
付近に伝送され、こゝでプラズマ放電するようになり、
又上記マイクロ波は上記複数のマイクロ波入力ポート3
から放電管外壁を貫通して導入されるため濃密なプラズ
マを放電管1の中央部に容易確実に生成出来るようにな
る。
Since the microwave plasma generator of the present invention is configured as described above, the microwave generated by one or more magnetrons 28 is passed through the one or more microwave input ports 3 to the outer circumference of the discharge tube 1. If introduced from the inner side to the inner peripheral side, the microwaves are transmitted to the vicinity of the central portion of the discharge tube 1 due to the influence of the magnetic lines of force of the permanent magnet 2 and plasma discharge is performed there. Becomes,
In addition, the microwave is input to the plurality of microwave input ports 3
Since this is introduced through the outer wall of the discharge tube, a dense plasma can be easily and surely generated in the central portion of the discharge tube 1.

〔発明の効果〕〔The invention's effect〕

上記のように本発明のマイクロ波プラズマ発生装置に
よれば放電管の中央部に濃密なプラズマを一様に生成出
来る大きな利益がある。
As described above, according to the microwave plasma generator of the present invention, there is a great advantage that a dense plasma can be uniformly generated in the central portion of the discharge tube.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明のマイクロ波プラズマ発生装置の縦断正
面図、第2図はその縦断側面図、第3図は従来のマイク
ロ波プラズマ発生装置の説明用断面図である。 1……円筒状放電管、2,25……永久磁石、3……マイク
ロ波入力ポート、21……放電室、22……窓、23……試
料、24……ソレノイドコイル、26……エッチング室、27
……ガス導入管、28……マグネトロン、29……矩形導波
管、30……円形導波管。
FIG. 1 is a vertical sectional front view of a microwave plasma generator of the present invention, FIG. 2 is a vertical sectional side view thereof, and FIG. 3 is a sectional view for explaining a conventional microwave plasma generator. 1 ... Cylindrical discharge tube, 2,25 ... Permanent magnet, 3 ... Microwave input port, 21 ... Discharge chamber, 22 ... Window, 23 ... Sample, 24 ... Solenoid coil, 26 ... Etching Chamber, 27
...... Gas inlet tube, 28 ...... magnetron, 29 …… rectangular waveguide, 30 …… circular waveguide.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】円筒状放電管と、この円筒状放電管の内周
面に円周方向に互いに離間して配置した軸方向に延びる
複数の永久磁石と、この永久磁石相互間で露出した上記
円筒状放電管の周壁に貫通形成せしめた複数のマイクロ
波入力ポートと、上記複数の入力ポートから上記円筒状
放電管内にマイクロ波を導入するため上記円筒状放電管
外に設けた複数のマイクロ波発生手段と、上記円筒状放
電管内に配置した試料保持手段とを有し、上記永久磁石
は上記円筒状放電管の円周方向にN,Sに着磁され、且つ
互いに対向する磁石面が互いに同一極性とされているこ
とを特徴とするマイクロ波プラズマ発生装置。
1. A cylindrical discharge tube, a plurality of axially extending permanent magnets circumferentially spaced from each other on an inner peripheral surface of the cylindrical discharge tube, and the permanent magnets exposed between the permanent magnets. A plurality of microwave input ports penetratingly formed on the peripheral wall of the cylindrical discharge tube, and a plurality of microwaves provided outside the cylindrical discharge tube for introducing microwaves into the cylindrical discharge tube from the plurality of input ports. Generating means and a sample holding means arranged in the cylindrical discharge tube, the permanent magnet is magnetized N, S in the circumferential direction of the cylindrical discharge tube, and the magnet surfaces facing each other. A microwave plasma generator having the same polarity.
JP2057956A 1990-03-12 1990-03-12 Microwave plasma generator Expired - Lifetime JPH0821578B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2057956A JPH0821578B2 (en) 1990-03-12 1990-03-12 Microwave plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2057956A JPH0821578B2 (en) 1990-03-12 1990-03-12 Microwave plasma generator

Publications (2)

Publication Number Publication Date
JPH03261137A JPH03261137A (en) 1991-11-21
JPH0821578B2 true JPH0821578B2 (en) 1996-03-04

Family

ID=13070478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2057956A Expired - Lifetime JPH0821578B2 (en) 1990-03-12 1990-03-12 Microwave plasma generator

Country Status (1)

Country Link
JP (1) JPH0821578B2 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0672306B2 (en) * 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 Plasma processing apparatus and plasma processing method
JP2551105B2 (en) * 1987-07-07 1996-11-06 住友化学工業株式会社 Optically active benzene derivative and method for producing the same
JPH0244720A (en) * 1988-08-05 1990-02-14 Fujitsu Ltd Microwave plasma treatment device

Also Published As

Publication number Publication date
JPH03261137A (en) 1991-11-21

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