JPH0821576B2 - Method for forming slanted end face of semiconductor substrate - Google Patents

Method for forming slanted end face of semiconductor substrate

Info

Publication number
JPH0821576B2
JPH0821576B2 JP5600788A JP5600788A JPH0821576B2 JP H0821576 B2 JPH0821576 B2 JP H0821576B2 JP 5600788 A JP5600788 A JP 5600788A JP 5600788 A JP5600788 A JP 5600788A JP H0821576 B2 JPH0821576 B2 JP H0821576B2
Authority
JP
Japan
Prior art keywords
forming
face
mask
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5600788A
Other languages
Japanese (ja)
Other versions
JPH01231327A (en
Inventor
宣和 高堂
満則 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP5600788A priority Critical patent/JPH0821576B2/en
Publication of JPH01231327A publication Critical patent/JPH01231327A/en
Publication of JPH0821576B2 publication Critical patent/JPH0821576B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体基板の傾斜端面形成法に関し、さらに
詳しくは光電子集積回路装置等の傾斜端面形成法に関す
るものである。The present invention relates to a method for forming a slanted end face of a semiconductor substrate, and more particularly to a method for forming a slanted end face of an optoelectronic integrated circuit device or the like.

［従来の技術］ 近年、半導体レーザ装置を同一基板内に多数集積した
光・電子集積回路が開発され、このための垂直端面ミラ
ー形成技術として、ドライエッチングによる微細加工技
術が注目されている。さらに最近では共振器端面を45゜
傾斜ミラーとし、レーザ光を該傾斜ミラーで反射せしめ
て基板に垂直な方向に取出すという内部反射型面出射レ
ーザがオプティカル・エンジニアリングの1987年１月号
（OPTICAL ENGINEERING/January 1987/vol.26 No.1）に
掲載のジョン・エイ・ネフ（John A.Neff）による文献
“メジャー・イニシャティブズ・フォー・オプティカル
・コンピューティング”（“Major initatives for opt
ical computing"）に提案されている。このような面出
射型レーザの断面図を第２図に示す。図中、21はGaAs基
板、22,24はクラッド層、23は活性層、25は出射光であ
る。このような構造を実現するために45゜傾斜ミラーを
ドライエッチングにより加工する。ここで出射光を基板
表面に垂直に出射させるためには傾斜端面の傾斜角を45
゜に精密に制御する必要がある。[Prior Art] In recent years, an opto-electronic integrated circuit in which a large number of semiconductor laser devices are integrated in the same substrate has been developed, and a fine processing technique by dry etching has attracted attention as a vertical end face mirror forming technique for this purpose. More recently, an internal reflection surface emitting laser that uses a 45 ° tilted mirror for the cavity end facet and reflects the laser light in the tilted mirror to extract it in a direction perpendicular to the substrate is a January 1987 issue of Optical Engineering (OPTICAL ENGINEERING). / January 1987 / vol.26 No.1) John A. Neff's article "Major initatives for opt"
A cross-sectional view of such a surface emitting laser is shown in Fig. 2. In the figure, 21 is a GaAs substrate, 22 and 24 are cladding layers, 23 is an active layer, and 25 is an output layer. In order to realize such a structure, a 45 ° tilt mirror is processed by dry etching.Here, the tilt angle of the tilt end face is set to 45 in order to allow the exit light to exit perpendicularly to the substrate surface.
It is necessary to precisely control the angle.

このような加工をするために、従来知られた方法を第
３図に示す。同図において31は半導体レーザ基板、32は
レジストマスク、33は反応性プラズマシャワーである。
第３図（ａ）に示すように、所定のパターンを有するレ
ジストマスク上から反応性プラズマシャワー33を基板と
45゜をなす方向に照射してドライエッチングを行うと第
３図（ｂ）に示されるような傾斜端面34が得られる。A conventionally known method for performing such processing is shown in FIG. In the figure, 31 is a semiconductor laser substrate, 32 is a resist mask, and 33 is a reactive plasma shower.
As shown in FIG. 3A, the reactive plasma shower 33 is used as a substrate on the resist mask having a predetermined pattern.
By irradiating in a direction forming an angle of 45 ° and performing dry etching, an inclined end face 34 as shown in FIG. 3 (b) is obtained.

［発明が解決しようとする課題］ 従来知られている方法では、ポジ型レジスト（例えば
MP1300−31、米国シプレイ社製品）を露光、現像後、ポ
ストベイク温度100〜115℃程度でポストベイクを行いパ
ターンを形成する。この場合、レジストパターン端面は
第３図（ａ）のように基板表面にほぼ垂直に近い断面形
状となる。このようなレジストパターンをマスク材とし
て反応性プラズマシャワーによる斜めエッチングを行う
と、第３図（ｂ）に示すようにレジスト端面35がイオン
衝撃により損耗を受けて後退する。これにより傾斜端面
上部の傾斜角が基板表面とのなす角について45゜からず
れ、例えば約50゜程度となってしまう。[Problems to be Solved by the Invention] In a conventionally known method, a positive type resist (for example,
After exposing and developing MP1300-31 (product of Shipley Co., USA), post baking is performed at a post baking temperature of about 100 to 115 ° C. to form a pattern. In this case, the end surface of the resist pattern has a cross-sectional shape almost vertical to the substrate surface as shown in FIG. When diagonal etching is performed by a reactive plasma shower using such a resist pattern as a mask material, the resist end surface 35 is damaged by ion bombardment and recedes as shown in FIG. 3B. As a result, the angle of inclination of the upper part of the inclined end surface deviates from the angle formed by the substrate surface of 45 °, for example, about 50 °.

以上のように、従来の方法では全面にわたって基板表
面との傾斜角が正確に制御された傾斜端面を得ることが
難しく、特に長時間のエッチングが必要な場合はレジス
トの後退が大きく、傾斜角のずれも大きくなるという問
題があった。As described above, according to the conventional method, it is difficult to obtain an inclined end face whose inclination angle with the substrate surface is accurately controlled over the entire surface, and particularly when long-time etching is required, the resist recedes greatly and the inclination angle There was a problem that the deviation became large.

本発明はこのような従来の問題点を解決するためにな
されたもので、基板の斜めエッチングにより、全面にわ
たって所望の傾斜角を有する傾斜端面を得ることのでき
る半導体基板の傾斜端面形成法を提供することを目的と
する。The present invention has been made to solve such conventional problems, and provides a method for forming a slanted end face of a semiconductor substrate, which can obtain a slanted end face having a desired slant angle over the entire surface by oblique etching of the substrate. The purpose is to do.

［課題を解決するための手段］ 本発明は、半導体基板表面上にあらかじめマスクパタ
ーンを形成した後、ドライエッチング法を用いて前記基
板表面と傾斜角をなす傾斜端面を形成する方法におい
て、半導体基板上に第１の有機レジスト層と、金属、半
金属またはこれらの酸化物層と、第２の有機レジスト層
とを順次形成する工程と、前記金属、半金属またはこれ
らと酸化物層および前記第２の有機レジスト層に所定の
パターンを形成する工程と、前記パターンが形成された
金属、半金属またはこれらの酸化物層をマスクとして酸
素含有ガスによるイオンビームを斜め照射し、前記第１
の有機レジスト層に傾斜端面側壁を有する開口部を形成
する工程と、前記第１の有機レジスト層をマスクとして
前記側壁の傾斜角と同一方向からイオンビームを照射し
てドライエッチングを行う工程とを有してなることを特
徴とする半導体基板の傾斜端面形成法である。[Means for Solving the Problems] The present invention provides a method of forming a mask pattern on the surface of a semiconductor substrate in advance and then forming an inclined end face forming an inclination angle with the substrate surface by using a dry etching method. A step of sequentially forming a first organic resist layer, a metal, a semimetal or an oxide layer thereof, and a second organic resist layer on the metal layer; A step of forming a predetermined pattern on the second organic resist layer, and obliquely irradiating an ion beam of an oxygen-containing gas with the metal, metalloid or oxide layer thereof on which the pattern is formed as a mask,
Forming an opening having an inclined end face side wall in the organic resist layer, and performing dry etching by irradiating an ion beam from the same direction as the inclination angle of the side wall using the first organic resist layer as a mask. A method for forming a slanted end face of a semiconductor substrate, which comprises:

［作用］ 本発明では、金属、半金属またはこれらの酸化物のパ
ターンをマスクとして酸素イオンビームを斜め照射して
第１の有機レジスト層に基板表面に対して傾斜せしめた
端面側壁を有する開口部を形成する。これは有機物に対
して反応性を有する酸素イオンビームでの有機レジスト
マスクと金属、半金属またはこれらの酸化物とのエッチ
ング速度が大きく異なることに基づく。一般に、酸素イ
オンビームのエッチング速度は、金属および酸化物で低
下し、有機物で著しく増大する。その一例を第１表に示
す。なお、酸素イオンビームの照射条件は500V、0.85mA
/cm2である。[Operation] In the present invention, an opening portion having an end face side wall in which the first organic resist layer is inclined with respect to the substrate surface by obliquely irradiating an oxygen ion beam with a pattern of a metal, a semimetal, or an oxide thereof as a mask. To form. This is based on the fact that the etching rates of an organic resist mask with an oxygen ion beam having reactivity with an organic substance and a metal, a metalloid, or an oxide thereof are significantly different. In general, the etching rate of oxygen ion beam is lowered in metals and oxides and is significantly increased in organic substances. An example is shown in Table 1. The oxygen ion beam irradiation conditions are 500 V and 0.85 mA.
/ cm 2 .

第１表より、酸素イオンビームのエッチングでは、チ
タン（Ti）、クロム（Cr）などの金属はエッチング速度
が非常に小さく、また有機物であるフォトレジスト（MP
1300−31;米国シプレイ社製）は非常に大きなエッチン
グ速度をもつことがわかる。従って酸素イオンビームで
金属等をマスクとして有機物であるフォトレジストを加
工する場合、本発明のように酸素イオンビームを斜めか
ら照射してもマスクの後退は微小なものとなる。 Table 1 shows that in oxygen ion beam etching, metals such as titanium (Ti) and chromium (Cr) have a very low etching rate, and organic photoresist (MP
1300-31; Shipley, USA) has a very high etching rate. Therefore, when a photoresist, which is an organic substance, is processed with an oxygen ion beam using a metal or the like as a mask, even if the oxygen ion beam is obliquely irradiated as in the present invention, the retreat of the mask becomes minute.

このように金属マスクの後退がほとんどなく、第１の
有機レジスト層のエッチングができることから、該第１
の有機レジスト層に平坦な傾斜端面を有する開口部を形
成することができる。さらに本発明では第１の有機レジ
スト層に形成した開口部端面の傾斜をイオンビームの入
射方向と平行にするので斜めエッチング中に有機レジス
ト端部の後退により傾斜端面上部の傾斜角が所望の角度
からずれることなく、全面にわたって所望の傾斜角を持
つ傾斜端面を得ることができる。In this way, since the first organic resist layer can be etched with almost no receding of the metal mask,
An opening having a flat inclined end face can be formed in the organic resist layer. Further, in the present invention, since the inclination of the end face of the opening formed in the first organic resist layer is made parallel to the incident direction of the ion beam, the inclination angle of the upper end of the inclined end face becomes a desired angle due to the receding of the end of the organic resist during oblique etching. It is possible to obtain an inclined end face having a desired inclination angle over the entire surface without deviating from the above.

［実施例］ 以下、本発明の一実施例について図面を参照して詳細
に説明する。[Embodiment] An embodiment of the present invention will be described in detail below with reference to the drawings.

第１図は本発明の一実施例を工程順に示した基板の縦
断面図である。まず、AlGaAs系レーザ基板11の表面にポ
ジ型レジスト（例えばMP1300−31;米国シプレイ社）を
スピン塗布し、さらに200℃で１時間のベーキングを行
い膜厚1.5μｍの下層レジストマスク（第１の有機レジ
スト層）12を形成する。この上に500Åの厚さのチタン
（Ti）層13を電子ビーム蒸着法で全面に蒸着し、さらに
この上にポジ型レジストを厚さ1.2μｍに塗布し、80℃
でプリベーキングして上層レジストマスク（第２の有機
レジスト層）14を形成する。次いで露光、現像を行って
上層レジストマスク14に所望のパターンを形成する（第
１図（ａ））。次に、ガス圧4PaのCF4ガスを用いた反応
性イオンエッチング（RIE）よりCF4イオンビーム15を照
射し、Ti層13にも所望のパターンを転写する（第１図
（ｂ））。次に、このTi層13のパターンをマスクとして
イオンミリング装置を用いてO2イオンビーム16を基板11
に対して45゜傾斜させて照射し、下層レジストマスク12
に45゜に傾斜したレジスト端面18を有する開口部を形成
し、パターン転写を行う（第１図（ｃ））。この工程に
おいて下層レジスト層12（膜厚1.5μｍ）をエッチング
した時のTi層のマスク後退は150Å以下であった。次に
以上のようなレジストパターンをマスクとして斜めエッ
チングを行い、傾斜端面19が形成される（第１図
（ｄ））。この時の斜めエッチングには、純塩素（C
l2）ガスの放電プラズマを利用した反応性イオンビーム
エッチングを用い、基板11を反応性プラズマシャワー17
に対して45゜の角度をなすように配置する。エッチング
条件をCl2ガス圧８×10-4Torr、イオン引出電圧400V、
エッチング時間35分間とすることにより、基板表面から
の深さが３μｍの傾斜溝が得られる。FIG. 1 is a longitudinal sectional view of a substrate showing an embodiment of the present invention in the order of steps. First, a positive type resist (for example, MP1300-31; Shipley Co., USA) is spin-coated on the surface of the AlGaAs laser substrate 11, and further baked at 200 ° C. for 1 hour to form a lower layer resist mask (first layer thickness: 1.5 μm). An organic resist layer) 12 is formed. A 500Å-thick titanium (Ti) layer 13 is vapor-deposited on the entire surface by an electron beam vapor deposition method, and a positive resist is applied thereon to a thickness of 1.2 μm, and the temperature is 80 ° C.
Is pre-baked to form an upper resist mask (second organic resist layer) 14. Then, exposure and development are performed to form a desired pattern on the upper resist mask 14 (FIG. 1 (a)). Next, a CF 4 ion beam 15 is irradiated by reactive ion etching (RIE) using CF 4 gas with a gas pressure of 4 Pa to transfer a desired pattern to the Ti layer 13 (FIG. 1 (b)). Next, using the pattern of the Ti layer 13 as a mask, an O 2 ion beam 16 is applied to the substrate 11 by using an ion milling device.
Irradiate at a 45 ° angle to the lower resist mask 12
An opening having a resist end surface 18 inclined at 45 ° is formed on the surface, and pattern transfer is performed (FIG. 1 (c)). In this step, the mask retreat of the Ti layer when the lower resist layer 12 (film thickness 1.5 μm) was etched was 150 Å or less. Next, oblique etching is performed using the resist pattern as described above as a mask to form an inclined end surface 19 (FIG. 1 (d)). Pure chlorine (C
l 2 ) Reactive ion beam etching using discharge plasma of gas is used to show the substrate 11 by reactive plasma shower 17
Place it at an angle of 45 ° to. The etching conditions are Cl 2 gas pressure 8 × 10 -4 Torr, ion extraction voltage 400V,
By setting the etching time to 35 minutes, an inclined groove having a depth of 3 μm from the substrate surface can be obtained.

本実施例では、基板表面に対して45゜の傾斜面を形成
する場合を説明したが、その他の角度の傾斜面を形成す
る場合でも酸素イオンビームの照射角度を調整すること
により、下層レジストマスク開口部の端面の傾斜角を所
望の角度に設定できるため、本発明は実施可能である。In this embodiment, the case where the inclined surface of 45 ° is formed with respect to the surface of the substrate has been described, but the lower layer resist mask can be formed by adjusting the irradiation angle of the oxygen ion beam even when the inclined surface of other angles is formed. The present invention can be implemented because the inclination angle of the end surface of the opening can be set to a desired angle.

また本実施例では、有機レジスト層のエッチングに酸
素イオンビームを用いたが、酸素ガスを含んだ混合ガス
によるイオンビームを用いても同様に基板表面に傾斜せ
しめた端面側壁を有する開口部を有機レジスト層に形成
することができ、本発明は実施可能である。Further, in this embodiment, the oxygen ion beam was used for etching the organic resist layer.However, even if an ion beam of a mixed gas containing oxygen gas is used, the opening having the inclined side wall is similarly formed on the substrate surface. It can be formed in a resist layer, and the present invention can be carried out.

［発明の効果］ 以上説明したように、本発明の傾斜端面形成法によれ
ば、有機レジスト層上に金属、半金属またはこれらの酸
化物のパターンを形成し、このパターンをマスクとして
有機レジスト層に所定の傾斜したレジスト端面を有する
開口部を形成する。上記の傾斜角と、半導体基板に形成
しようとする傾斜端面の傾斜角とをほぼ同じにしている
ので有機レジストマスクのエッジ部の後退がなく、全面
にわたって所望の傾斜角を有する傾斜端面を半導体基板
に形成することができる。[Effects of the Invention] As described above, according to the method of forming an inclined end surface of the present invention, a pattern of metal, metalloid or oxide thereof is formed on the organic resist layer, and the organic resist layer is formed using this pattern as a mask. An opening having a predetermined inclined resist end surface is formed in the substrate. Since the above inclination angle and the inclination angle of the inclined end surface to be formed on the semiconductor substrate are substantially the same, there is no receding of the edge portion of the organic resist mask, and the inclined end surface having the desired inclination angle is formed on the entire surface of the semiconductor substrate. Can be formed.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明の一実施例の工程図、第２図は面出射型
レーザの概略断面図、第３図は従来例による半導体基板
の傾斜端面形成法の工程図である。 11、31……レーザ基板、12……下層レジストマスク 13……チタン（Ti）層、14……上層レジストマスク 15……CF4イオンビーム 16……O2イオンビーム 17、33……反応性プラズマシャワー 18、35……レジスト端面 19、34……傾斜端面、21……GaAs基板 22、24……クラッド層、23……活性層 25……出射光、32……レジストマスクFIG. 1 is a process drawing of an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of a surface emitting laser, and FIG. 3 is a process drawing of a conventional method for forming a slanted end face of a semiconductor substrate. 11, 31 …… Laser substrate, 12 …… Lower layer resist mask 13 …… Titanium (Ti) layer, 14 …… Upper layer resist mask 15 …… CF 4 ion beam 16 …… O 2 ion beam 17, 33 …… Reactivity Plasma shower 18, 35 …… Resist end face 19, 34 …… Inclined end face, 21 …… GaAs substrate 22, 24 …… Cladding layer, 23 …… Active layer 25 …… Outgoing light, 32 …… Resist mask

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】半導体基板表面上にあらかじめマスクパタ
ーンを形成した後、ドライエッチング法を用いて前記基
板表面と傾斜角をなす傾斜端面を形成する方法におい
て、半導体基板上に第１の有機レジスト層と、金属、半
金属またはこれらの酸化物層と、第２の有機レジスト層
とを順次形成する工程と、前記金属、半金属またはこれ
らの酸化物層および前記第２の有機レジスト層に所定の
パターンを形成する工程と、前記パターンが形成された
金属、半金属またはこれらの酸化物層をマスクとして酸
素含有ガスによるイオンビームを斜め照射し、前記第１
の有機レジスト層に傾斜端面側壁を有する開口部を形成
する工程と、前記第１の有機レジスト層をマスクとして
前記側壁の傾斜角と同一方向からイオンビームを照射し
てドライエッチングを行う工程とを有してなることを特
徴とする半導体基板の傾斜端面形成法。1. A method of forming a mask pattern in advance on a surface of a semiconductor substrate and then forming an inclined end face forming an inclination angle with the surface of the substrate by using a dry etching method, wherein a first organic resist layer is formed on the semiconductor substrate. A step of sequentially forming a metal, a semimetal or an oxide layer thereof and a second organic resist layer, and a step of forming a predetermined amount on the metal, semimetal or an oxide layer thereof and the second organic resist layer. A step of forming a pattern, and obliquely irradiating an ion beam of an oxygen-containing gas with the patterned metal, metalloid or oxide layer thereof as a mask,
Forming an opening having an inclined end face side wall in the organic resist layer, and performing dry etching by irradiating an ion beam from the same direction as the inclination angle of the side wall using the first organic resist layer as a mask. A method for forming a slanted end face of a semiconductor substrate, which comprises:
JP5600788A 1988-03-11 1988-03-11 Method for forming slanted end face of semiconductor substrate Expired - Lifetime JPH0821576B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5600788A JPH0821576B2 (en) 1988-03-11 1988-03-11 Method for forming slanted end face of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5600788A JPH0821576B2 (en) 1988-03-11 1988-03-11 Method for forming slanted end face of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPH01231327A JPH01231327A (en) 1989-09-14
JPH0821576B2 true JPH0821576B2 (en) 1996-03-04

Family

ID=13014995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5600788A Expired - Lifetime JPH0821576B2 (en) 1988-03-11 1988-03-11 Method for forming slanted end face of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPH0821576B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10008384B2 (en) * 2015-06-25 2018-06-26 Varian Semiconductor Equipment Associates, Inc. Techniques to engineer nanoscale patterned features using ions
US11119405B2 (en) * 2018-10-12 2021-09-14 Applied Materials, Inc. Techniques for forming angled structures
JP7196295B2 (en) * 2018-10-31 2022-12-26 アプライド マテリアルズ インコーポレイテッド Controlled hard mask molding for making tapered slanted fins
US11150394B2 (en) 2019-01-31 2021-10-19 Facebook Technologies, Llc Duty cycle range increase for waveguide combiners

Also Published As

Publication number Publication date
JPH01231327A (en) 1989-09-14

Similar Documents

Publication Publication Date Title
US4567132A (en) Multi-level resist image reversal lithography process
US4698238A (en) Pattern-forming method
JP3377134B2 (en) Reactive ion etching of lattice and two-dimensional lattice structures
US5259925A (en) Method of cleaning a plurality of semiconductor devices
JPH0821576B2 (en) Method for forming slanted end face of semiconductor substrate
JPH01313983A (en) Total reflection type mirror forming method for surface emission laser
JPS61166130A (en) Formation of photoresist pattern
JPH0644664B2 (en) Semiconductor laser external tilt mirror formation method
JPH03235331A (en) Forming method for grating pattern
JPH09167733A (en) Formation of pattern
JPH0778748A (en) Aperture mask and manufacture thereof
JP3109059B2 (en) Dry etching method
JP3120000B2 (en) Method of forming electrode on projecting portion of substrate
JPS613489A (en) Manufacture of semiconductor device
JPS59126634A (en) Formation of pattern
JPH022175A (en) Manufacture of thin film transistor
JPH0618186B2 (en) Semiconductor substrate inclined edge surface formation method
JPH03110563A (en) Pattern forming method
JPH0645295A (en) Laser treatment
JPS63182884A (en) Manufacture of resonator of semiconductor laser
JP2534304B2 (en) Method for forming etched mirror by RIBE
JPH0727217B2 (en) Method of forming resist pattern on substrate
JPS6029921B2 (en) Diffraction grating manufacturing method
JPH0629261A (en) Pattern formation
JPS5933827A (en) Manufacture of semiconductor device