JPH08201790A - Liquid crystal substrat and its production - Google Patents
Liquid crystal substrat and its productionInfo
- Publication number
- JPH08201790A JPH08201790A JP829595A JP829595A JPH08201790A JP H08201790 A JPH08201790 A JP H08201790A JP 829595 A JP829595 A JP 829595A JP 829595 A JP829595 A JP 829595A JP H08201790 A JPH08201790 A JP H08201790A
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- Prior art keywords
- electrode
- liquid crystal
- protective film
- film
- insulating protective
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示装置に採用す
るに適した液晶基板及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal substrate suitable for use in a liquid crystal display device and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来、液晶表示装置においては、その液
晶基板が、両電極基板を所定間隙（数μｍ）を介し互い
に対向するように配置するとともにこれら両電極基板の
間に液晶を封入して構成されている。そして、両電極基
板の各電極を構成する透明導電膜間に電圧を印加するこ
とによって、液晶表示装置における表示を行うようにな
っている。2. Description of the Related Art Conventionally, in a liquid crystal display device, the liquid crystal substrates are arranged so that both electrode substrates face each other with a predetermined gap (several μm) therebetween, and liquid crystal is sealed between the two electrode substrates. It is configured. Then, by applying a voltage between the transparent conductive films forming each electrode of both electrode substrates, display is performed in the liquid crystal display device.
【０００３】また、上記所定間隙中の液晶内に金属等の
導電性異物が混入すると、両透明導電膜がこの導電性異
物のために短絡して電気的導通を生じ、表示不良を招く
おそれがある。そこで、導電性異物による両透明導電膜
の短絡を防止するため、両透明導電膜の各対向面に、絶
縁性保護膜がそれぞれ形成されている。Further, if a conductive foreign substance such as a metal is mixed in the liquid crystal in the predetermined gap, both transparent conductive films may be short-circuited due to the conductive foreign substance to cause electrical conduction, resulting in display failure. is there. Therefore, in order to prevent a short circuit between both transparent conductive films due to a conductive foreign substance, an insulating protective film is formed on each opposing surface of both transparent conductive films.
【０００４】[0004]
【発明が解決しようとする課題】ところで、通常、上述
した各透明導電膜が、酸化インジウムを主成分としこれ
に数％の酸化錫をドープした組成物（以下、ＩＴＯとい
う）により導電性を有するように形成され、一方、各絶
縁性保護膜がＴａ2 Ｏ5 やＳｉＯ2 等により絶縁性を有
するように形成されている。By the way, usually, each of the above-mentioned transparent conductive films has conductivity by using a composition containing indium oxide as a main component and doped with tin oxide of several% (hereinafter referred to as ITO). On the other hand, each insulating protective film is formed of Ta 2 O 5 , SiO 2 or the like so as to have an insulating property.
【０００５】しかし、透明導電膜の屈折率と絶縁性保護
膜の屈折率とが互いに異なる。このため、表示光源から
の光を液晶基板を透過させようとした場合、この光が各
電極基板における透明導電膜と絶縁性保護膜との境界面
で反射されてしまう。その結果、液晶基板の光透過率を
十分に得ることができず、表示輝度が低下するという不
具合を招く。However, the refractive index of the transparent conductive film and the refractive index of the insulating protective film are different from each other. For this reason, when the light from the display light source is transmitted through the liquid crystal substrate, the light is reflected at the boundary surface between the transparent conductive film and the insulating protective film in each electrode substrate. As a result, the light transmittance of the liquid crystal substrate cannot be sufficiently obtained, which causes a problem that the display brightness is reduced.
【０００６】これに対し、本発明者等は、図５に示す構
成の電極基板１と液晶２とを有する液晶基板を準備し
て、この液晶基板に対し垂直方向に表示光源から光を入
射させた場合の反射率と屈折率との関係を調べてみた。
ここで、電極基板１は、ガラス基板１ａに形成したＩＴ
Ｏからなる透明導電膜（電極）１ｂに絶縁性保護膜１ｃ
を形成し、かつこの絶縁性保護膜１ｃに配向膜１ｄを形
成して構成されている。なお、ガラス基板１ａ、透明導
電膜１ｂ及び配向膜１ｄの各屈折率ｎは、それぞれ、ｎ
＝１．５、１．９及び１．７であり、また、透明導電膜
１ｂ、絶縁性保護膜１ｃ及び配向膜１ｄの各膜厚ｄは、
それぞれ、ｄ＝１５００Å、１５００Å及び２５０Åで
あるとする。On the other hand, the inventors of the present invention prepared a liquid crystal substrate having the electrode substrate 1 and the liquid crystal 2 having the structure shown in FIG. 5, and caused light to enter from the display light source in a direction perpendicular to the liquid crystal substrate. The relationship between the reflectance and the refractive index in the case of being exposed was examined.
Here, the electrode substrate 1 is an IT formed on the glass substrate 1a.
Insulating protective film 1c on transparent conductive film (electrode) 1b made of O
And an alignment film 1d is formed on the insulating protective film 1c. The refractive indices n of the glass substrate 1a, the transparent conductive film 1b, and the alignment film 1d are respectively n.
= 1.5, 1.9 and 1.7, and the film thickness d of each of the transparent conductive film 1b, the insulating protective film 1c and the alignment film 1d is
Let d = 1500Å, 1500Å and 250Å, respectively.
【０００７】このような前提条件下にて、絶縁性保護膜
１ｃの形成材料を種々変更して屈折率ｎを変えてみたと
ころ、図６にて示すような結果が得られた。これによれ
ば、透明導電膜１ｂ及び絶縁性保護膜１ｃの境界面にお
ける表示光源からの光の反射率は、絶縁性保護膜１ｃの
屈折率ｎが透明導電膜１ｂの屈折率（ｎ＝１．９）に近
い領域で、小さいことが分かった。Under such preconditions, when the material for forming the insulating protective film 1c was variously changed and the refractive index n was changed, the result as shown in FIG. 6 was obtained. According to this, in the reflectance of the light from the display light source at the boundary surface between the transparent conductive film 1b and the insulating protective film 1c, the refractive index n of the insulating protective film 1c is the refractive index (n = 1 of the transparent conductive film 1b. It was found to be small in the region close to .9).
【０００８】そこで、本発明者等は、透明導電膜の屈折
率と絶縁性保護膜の屈折率との差を小さくすれば、上記
不具合を解消させ得るという観点から、絶縁性保護膜の
形成材料として使用可能な材料につき種々検討してみ
た。これに伴い、絶縁性保護膜を透明導電膜の形成材料
と同一の材料、即ちＩＴＯで形成できれば屈折率を近似
させ得ること、そして、ＩＴＯにより例えばスパッタ装
置でもって成膜する場合、この成膜条件のうちの酸素ガ
ス供給量を調整すれば膜の比抵抗を大きく変化させ得る
ことに着目した。Therefore, the inventors of the present invention can solve the above problems by reducing the difference between the refractive index of the transparent conductive film and the refractive index of the insulating protective film. Various studies were conducted on materials that can be used as Along with this, if the insulating protective film can be formed of the same material as the transparent conductive film, that is, ITO, the refractive index can be approximated. We paid attention to the fact that the specific resistance of the film can be greatly changed by adjusting the oxygen gas supply amount among the conditions.
【０００９】そこで、酸素ガス供給量を多くしてＩＴＯ
により保護膜として成膜してみたところ、この保護膜
が、透明導電膜を保護するに要する絶縁性を発揮するこ
とが分かった。以上のことから、絶縁性保護膜を、ＩＴ
Ｏからなる透明導電膜に、成膜条件における酸素ガス供
給量を多くしてＩＴＯを抵抗膜として成膜積層すること
で、透明導電膜と絶縁性保護膜との境界面における光反
射率を小さくできることが分かった。また、このような
現象は、酸素ガス供給量に加えて、成膜条件のうちの、
例えば、温度や真空度等を調整することによっても、実
現できることも分かった。Therefore, the ITO gas is increased by increasing the oxygen gas supply amount.
When a film was formed as a protective film by, it was found that this protective film exhibits the insulating property required to protect the transparent conductive film. From the above, the insulating protective film is
By forming and stacking ITO as a resistance film on the transparent conductive film made of O by increasing the oxygen gas supply amount under the film forming conditions, the light reflectance at the interface between the transparent conductive film and the insulating protective film is reduced. I knew I could do it. In addition to the oxygen gas supply amount, such a phenomenon is
For example, it was also found that it can be realized by adjusting the temperature and the degree of vacuum.
【００１０】そこで、本発明は、以上のような観点か
ら、電極と絶縁性保護膜との境界面での光反射を抑止す
る液晶基板及びその製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION From the above viewpoints, it is an object of the present invention to provide a liquid crystal substrate which suppresses light reflection at the interface between an electrode and an insulating protective film, and a method for manufacturing the same.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明においては、電極（１５、２
２）とこの電極を保護する絶縁性保護膜（１６、２３）
とをそれぞれ有する両電極基板（１０、２０）と、これ
ら両電極基板の間に封入した液晶（３０）とを備えた液
晶基板において、各絶縁性保護膜（１６、２３）の少な
くとも一方が、電極（１５、２２）の形成材料と同一の
材料からなる抵抗膜でもって構成されていることを特徴
とする液晶基板が提供される。In order to achieve the above object, in the invention described in claim 1, the electrodes (15, 2) are used.
2) and an insulating protective film (16, 23) that protects this electrode
In a liquid crystal substrate provided with both electrode substrates (10, 20) each having and a liquid crystal (30) sealed between the both electrode substrates, at least one of the insulating protective films (16, 23) is Provided is a liquid crystal substrate, which is configured by a resistance film made of the same material as the material for forming the electrodes (15, 22).
【００１２】また、請求項２に記載の発明では、請求項
１に記載の液晶基板において、各電極（１５、２２）
が、インジウムと錫の酸化組成物からなる導電膜により
それぞれ構成され、各絶縁性保護膜（１６、２３）の少
なくとも一方が、前記酸化組成物からなる抵抗膜により
構成されていることを特徴とする。In the invention described in claim 2, each electrode (15, 22) in the liquid crystal substrate according to claim 1 is
Are each formed of a conductive film made of an indium and tin oxide composition, and at least one of the insulating protective films (16, 23) is made of a resistance film made of the oxide composition. To do.
【００１３】また、請求項３に記載の発明においては、
電極（１５、２２）とこの電極を保護する絶縁性保護膜
（１６、２３）とをそれぞれ有する両電極基板（１０、
２０）の間に液晶を封入してなる液晶基板の製造方法に
おいて、各電極（１５、２２）を、インジウムと錫の酸
化組成物でもって導電膜としてそれぞれ形成し、各絶縁
性保護膜（１６、２３）の少なくとも一方を、前記酸化
組成物でもって抵抗膜として形成することを特徴とする
液晶基板の製造方法が提供される。Further, in the invention described in claim 3,
Both electrode substrates (10, 10) each having an electrode (15, 22) and an insulating protective film (16, 23) for protecting this electrode.
In the method of manufacturing a liquid crystal substrate in which a liquid crystal is sealed between 20), each electrode (15, 22) is formed as a conductive film with an oxide composition of indium and tin, and each insulating protective film (16) is formed. , 23) is formed as a resistance film with the above-mentioned oxidizing composition.
【００１４】なお、上記各構成要素のカッコ内の符号
は、後述する実施例記載の具体的構成要素との対応関係
を示すものである。The reference numerals in parentheses of the above constituent elements indicate the corresponding relationship with the concrete constituent elements described in the embodiments described later.
【００１５】[0015]
【発明の作用効果】上述のように構成した請求項１又は
２に記載の発明によれば、各絶縁性保護膜の少なくとも
一方が、電極の形成材料と同一の材料からなる抵抗膜に
より構成されている。従って、各絶縁性保護膜の少なく
とも一方が、電極の屈折率との差の小さな屈折率を有す
る抵抗膜となる。その結果、電極と絶縁性保護膜との境
界面での光反射を効果的に抑止することが可能となる。According to the invention described in claim 1 or 2, configured as described above, at least one of the insulating protective films is formed of a resistance film made of the same material as the electrode forming material. ing. Therefore, at least one of the insulating protective films serves as a resistance film having a refractive index with a small difference from the refractive index of the electrode. As a result, it is possible to effectively suppress light reflection at the boundary surface between the electrode and the insulating protective film.
【００１６】また、請求項３に記載の発明によれば、各
絶縁性保護膜の少なくとも一方を、電極の形成材料であ
る前記酸化組成物でもって抵抗膜として形成するので、
電極及び絶縁性保護膜の形成に使用する装置、例えば、
スパッタ装置のターゲットを同一のまま使用できる。従
って、液晶基板の製造上のメリットが大きい。According to the third aspect of the invention, at least one of the insulating protective films is formed as a resistance film with the oxidizing composition which is a material for forming the electrodes.
An apparatus used for forming electrodes and an insulating protective film, for example,
The target of the sputtering device can be used as it is. Therefore, the merit in manufacturing the liquid crystal substrate is great.
【００１７】[0017]
【実施例】以下、本発明の一実施例を図面により説明す
る。図１は、液晶表示装置の液晶基板に本発明が適用さ
れた例を示している。この液晶基板は、カラーフィルタ
基板１０と、このカラーフィルタ基板１０に所定間隙
（例えば、数μｍ）を介して対向する対向基板２０と、
カラーフィルタ基板１０と対向基板２０との間に封入し
た液晶３０とにより構成されている。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows an example in which the present invention is applied to a liquid crystal substrate of a liquid crystal display device. The liquid crystal substrate includes a color filter substrate 10 and a counter substrate 20 facing the color filter substrate 10 with a predetermined gap (for example, several μm) therebetween.
The liquid crystal 30 is enclosed between the color filter substrate 10 and the counter substrate 20.
【００１８】カラーフィルタ基板１０は、透明ガラス基
板１１を備えており、この透明ガラス基板１１の内表面
には、複数条のカラーフィルタ１２が各ブラックマスク
１３と交互に形成されている。また、カラーフィルタ基
板１０は、複数条の電極１５を備えており、これら各電
極１５は、保護膜１４を介しカラーフィルタ１２及びブ
ラックマスク１３の各内表面に形成されている。ここ
で、各電極１５は、ＩＴＯにより形成した透明導電膜で
もって構成されている。The color filter substrate 10 is provided with a transparent glass substrate 11, and a plurality of color filters 12 are formed alternately with the black masks 13 on the inner surface of the transparent glass substrate 11. Further, the color filter substrate 10 is provided with a plurality of electrodes 15, and each of these electrodes 15 is formed on each inner surface of the color filter 12 and the black mask 13 via a protective film 14. Here, each electrode 15 is composed of a transparent conductive film formed of ITO.
【００１９】また、カラーフィルタ基板１０は、各電極
１５を保護するための絶縁性保護膜１６を備えており、
この絶縁性保護膜１６は、ＩＴＯにより抵抗値１０11Ω
／口以上の絶縁性を有するように形成した抵抗膜でもっ
て構成されている。また、この絶縁性保護膜１６は、電
極１５の形成材料と同様の材料、即ちＩＴＯにより形成
されているので、保護膜１６と電極１５との間の屈折率
の差は小さい。なお、絶縁性保護膜１６の内表面には、
配向膜１７が形成されている。Further, the color filter substrate 10 is provided with an insulating protective film 16 for protecting each electrode 15,
The insulating protective film 16 is made of ITO and has a resistance value of 10 11 Ω.
/ A resistance film formed so as to have an insulating property equal to or higher than /. Further, since the insulating protective film 16 is made of the same material as that of the electrode 15, that is, ITO, the difference in the refractive index between the protective film 16 and the electrode 15 is small. In addition, on the inner surface of the insulating protective film 16,
The alignment film 17 is formed.
【００２０】一方、対向基板２０は、透明ガラス基板２
１を備えており、この透明ガラス基板２１の内表面に
は、複数条の電極２２が形成されている。ここで、各電
極２２は、各電極１５と同様に、ＩＴＯにより形成した
透明導電膜でもって構成されている。なお、各電極２２
は、各電極１５と共に格子状電極を形成するように配置
されている。そして、両電極１５、２２の間に電圧を印
加することで、液晶３０の駆動が可能となる。On the other hand, the counter substrate 20 is the transparent glass substrate 2
1, a plurality of electrodes 22 are formed on the inner surface of the transparent glass substrate 21. Here, each electrode 22 is formed of a transparent conductive film formed of ITO, like each electrode 15. In addition, each electrode 22
Are arranged so as to form a grid electrode together with each electrode 15. Then, by applying a voltage between both electrodes 15 and 22, the liquid crystal 30 can be driven.
【００２１】また、対向基板２０は、各電極２２を保護
するための絶縁性保護膜２３を備えており、この絶縁性
保護膜２３は、上記保護膜１６と同様に、ＩＴＯにより
抵抗値１０11Ω／口以上の絶縁性を有するように形成し
た抵抗膜によって構成されている。これにより、液晶３
０内に混入した導電性異物による両絶縁性保護膜１６、
２３間の電気的導通が防止される。Further, the counter substrate 20 is provided with an insulating protective film 23 for protecting each electrode 22, and this insulating protective film 23 is made of ITO and has a resistance value of 10 11 like the protective film 16 described above. It is composed of a resistance film formed to have an insulating property of Ω / port or more. As a result, the liquid crystal 3
Both insulating protective films 16 due to conductive foreign substances mixed in 0,
Electrical conduction between 23 is prevented.
【００２２】また、絶縁性保護膜２３は、電極２２の形
成材料と同様の材料、即ちＩＴＯにより形成されている
ので、保護膜２３と電極２２との間の屈折率の差は小さ
い。なお、この絶縁性保護膜２３の内表面には、配向膜
２４が形成されている。次に、このように構成した液晶
基板の製造方法について説明する。まず、カラーフィル
タ基板１０のガラス基板１１の内表面にカラーフィルタ
１２及びブラックマスク１３を介し保護膜１４を形成す
る。Further, since the insulating protective film 23 is made of the same material as that of the electrode 22, that is, ITO, the difference in the refractive index between the protective film 23 and the electrode 22 is small. An alignment film 24 is formed on the inner surface of the insulating protective film 23. Next, a method of manufacturing the liquid crystal substrate thus configured will be described. First, the protective film 14 is formed on the inner surface of the glass substrate 11 of the color filter substrate 10 via the color filter 12 and the black mask 13.
【００２３】ついで、複数条の電極１５をパターン形成
するための透明導電膜を、保護膜１４の内表面に、スパ
ッタ装置４０（図２参照）により次のようにして形成す
る。ここで、スパッタ装置４０は、真空チャンバ４１内
の上下両搬送レール４２間に、成膜を施す対象を取り付
けたトレイ４３を配置し、真空チャンバ４１の内部をク
ライオポンプ４４により真空引きし、ＩＴＯターゲット
４５に負の直流電圧をＤＣ電源Ｂにより印加して、両マ
スフローコントローラ４６、４７によりそれぞれ真空チ
ャンバ４１内に供給される酸素ガス及びアルゴンガスを
放電させて、ＩＴＯターゲット４５にスパッタリングを
施して上記対象物にＩＴＯを成膜するように構成されて
いる。なお、符号４８及び４９は、それぞれ、ヒータ及
びマグネットを示す。Next, a transparent conductive film for pattern-forming the plurality of electrodes 15 is formed on the inner surface of the protective film 14 by the sputtering device 40 (see FIG. 2) as follows. Here, in the sputtering apparatus 40, a tray 43 to which a film formation target is attached is arranged between the upper and lower transfer rails 42 in the vacuum chamber 41, the interior of the vacuum chamber 41 is evacuated by a cryopump 44, and the ITO A negative DC voltage is applied to the target 45 by the DC power source B, the oxygen gas and the argon gas supplied into the vacuum chamber 41 are discharged by the mass flow controllers 46 and 47, and the ITO target 45 is sputtered. It is configured to form an ITO film on the object. Note that reference numerals 48 and 49 denote a heater and a magnet, respectively.
【００２４】上述のような保護膜１４の形成後、この保
護膜１４がＩＴＯターゲット４５に対向し得るようにガ
ラス基板１１をトレイ４３に装着した後、このトレイ４
３を真空チャンバ４１内にて両搬送レール４２間に配置
する。このような状態にて、クライオポンプ４４により
真空チャンバ４１の内部を真空に引く。また、マスフロ
ーコントローラ４６により酸素ガスの真空チャンバ４１
内への流入量を所定量に調整するとともに、マスフロー
コントローラ４７によりアルゴンガスの真空チャンバ４
１内への流入量を所定量に調整する。この場合、電極１
５の比抵抗が極小値となるように、（酸素ガス流量／ア
ルゴンガス流量）のガス流量比率Ｒを、ほぼ、０．０５
に設定する。After forming the protective film 14 as described above, the glass substrate 11 is mounted on the tray 43 so that the protective film 14 can face the ITO target 45, and then the tray 4 is formed.
3 is arranged in the vacuum chamber 41 between the two transfer rails 42. In such a state, the interior of the vacuum chamber 41 is evacuated by the cryopump 44. Further, the mass flow controller 46 controls the oxygen gas vacuum chamber 41.
The amount of inflow into the chamber is adjusted to a predetermined amount, and the mass flow controller 47 controls the argon gas in the vacuum chamber 4.
The inflow into 1 is adjusted to a predetermined amount. In this case, electrode 1
The gas flow rate ratio R of (oxygen gas flow rate / argon gas flow rate) is set to about 0.05 so that the specific resistance of 5 becomes a minimum value.
Set to.
【００２５】ここで、ガス流量比率Ｒを、ほぼ、０．０
５に設定する根拠について説明する。抵抗値は、酸素ガ
スの分圧に依存するため、酸素ガス流量の変動により変
化する。これは、ＩＴＯ中のインジウム酸化物の酸素分
子欠陥によるキャリア数が変化するためである。例え
ば、酸素ガス流量を増大すると、高抵抗傾向を示すよう
になり、さらに酸素ガス流量を増大すると、酸素分子欠
陥が少なくなってキャリア濃度が低くなり、抵抗膜とな
る。Here, the gas flow rate ratio R is approximately 0.0
The rationale for setting 5 will be described. Since the resistance value depends on the partial pressure of the oxygen gas, it changes depending on the fluctuation of the oxygen gas flow rate. This is because the number of carriers changes due to oxygen molecule defects of indium oxide in ITO. For example, when the oxygen gas flow rate is increased, the resistance tends to be high, and when the oxygen gas flow rate is further increased, oxygen molecule defects are reduced and the carrier concentration is lowered, resulting in a resistance film.
【００２６】そこで、ＩＴＯの比抵抗とガス流量比率Ｒ
との関係を調べてみたところ、図３に示す結果が得られ
た。この図３の特性曲線は、室温及び０．３（パスカ
ル）下で、ガス流量比率Ｒを変化させたときのＩＴＯの
比抵抗の変化を示す。これによれば、Ｒがほぼ０．０５
のとき、比抵抗が極小となることが分かる。よって、電
極１５を形成するための透明導電膜を成膜するにあた
り、Ｒをほぼ０．０５と設定した。なお、Ｒの値０．０
５は、スパッタ装置や成膜圧力等の条件が異なると変動
するので、必要に応じて変更する。Therefore, the specific resistance of ITO and the gas flow rate ratio R
As a result of investigating the relationship with, the results shown in FIG. 3 were obtained. The characteristic curve in FIG. 3 shows a change in the specific resistance of ITO when the gas flow rate ratio R is changed at room temperature and 0.3 (Pascal). According to this, R is about 0.05
It can be seen that the specific resistance becomes minimum when. Therefore, when forming the transparent conductive film for forming the electrode 15, R was set to about 0.05. The value of R is 0.0
No. 5 varies depending on the conditions such as the sputtering apparatus and the film forming pressure, so it is changed as necessary.
【００２７】以上により、電極１５を形成するための透
明導電膜の成膜するにあたり、真空チャンバ４１の内部
は、上記ガス流量比率Ｒにてアルゴンガス及び酸素ガス
を混在させた１０-1（パスカル）オーダーの真空雰囲気
に維持される。但し、ヒータ４８による加熱を要する。
そして、ＩＴＯターゲット４５に対するＤＣ電源Ｂの負
の直流電圧の印加により、酸素ガス及びアルゴンガスを
放電させてＩＴＯターゲット４５にスパッタリングを施
し、保護膜１４の内表面にＩＴＯによる透明導電膜を成
膜する。As described above, in forming the transparent conductive film for forming the electrode 15, the inside of the vacuum chamber 41 was mixed with argon gas and oxygen gas at the gas flow rate ratio R of 10 -1 (Pascal). ) Maintaining a vacuum atmosphere of the order. However, heating by the heater 48 is required.
Then, by applying a negative DC voltage from the DC power source B to the ITO target 45, the oxygen gas and the argon gas are discharged and the ITO target 45 is sputtered to form a transparent conductive film of ITO on the inner surface of the protective film 14. To do.
【００２８】このような透明導電膜の成膜後、この透明
導電膜にホトエッチング処理を施して複数条の電極１５
をパターン形成する。一方、対向基板２０の透明ガラス
基板２１の内表面には、上述と同様にして透明導電膜を
成膜した後、この透明導電膜にホトエッチング処理を施
して複数条の電極２２をパターン形成する。After forming such a transparent conductive film, the transparent conductive film is subjected to photo-etching treatment to form a plurality of electrodes 15.
To form a pattern. On the other hand, after forming a transparent conductive film on the inner surface of the transparent glass substrate 21 of the counter substrate 20 in the same manner as described above, the transparent conductive film is subjected to photoetching treatment to form a plurality of electrodes 22 in a pattern. .
【００２９】然る後、各絶縁性保護膜１６及び２３をス
パッタ装置４０を利用して次にように形成する。複数条
の電極１５がＩＴＯターゲット４５に対向し得るように
ガラス基板１１をトレイ４３に装着した後、当該トレイ
４３を真空チャンバ４１内の搬送レール４２間に配置す
る。そして、形成すべき保護膜１６の比抵抗が１０8 Ω
ｃｍとなるように、ガス流量比率Ｒを、Ｒ≧１０に設定
する。After that, the insulating protective films 16 and 23 are formed as follows using the sputtering device 40. After the glass substrate 11 is mounted on the tray 43 so that the plurality of electrodes 15 can face the ITO target 45, the tray 43 is arranged between the transfer rails 42 in the vacuum chamber 41. The specific resistance of the protective film 16 to be formed is 10 8 Ω
The gas flow rate ratio R is set to R ≧ 10 so as to be cm.
【００３０】ここで、Ｒ≧１０とする根拠について説明
する。絶縁性保護膜１６の膜厚を１０-3ｃｍ以下とすれ
ば、この絶縁性保護膜１６は１０11Ω／口の絶縁性を有
することが必要である。これに対し、図３の特性曲線に
よれば、Ｒ≧１０のとき、ＩＴＯの比抵抗が１０8 Ωｃ
ｍ以上となることが分かる。Here, the reason why R ≧ 10 is described. If the thickness of the insulating protective film 16 is set to 10 −3 cm or less, the insulating protective film 16 needs to have an insulating property of 10 11 Ω / port. On the other hand, according to the characteristic curve of FIG. 3, when R ≧ 10, the specific resistance of ITO is 10 8 Ωc.
It turns out that it becomes m or more.
【００３１】よって、室温で絶縁性保護膜１６を成膜す
るにあたり、ＲをＲ≧１０に設定し、１０11Ω／口の絶
縁性を確保することとした。この場合、室温で成膜する
のは、ＩＴＯが非晶質であり抵抗値が大きいためであ
る。また、ＩＴＯは２００℃付近で結晶化が進み低抵抗
となるので、成膜及び成膜後の工程は、結晶化が進む温
度以下で行うことが望ましい。Therefore, in forming the insulating protective film 16 at room temperature, R is set to R ≧ 10 to secure the insulating property of 10 11 Ω / port. In this case, the reason for forming the film at room temperature is that ITO is amorphous and has a large resistance value. Further, since ITO crystallizes at around 200 ° C. and has a low resistance, it is desirable that the film formation and the steps after the film formation be performed at a temperature not higher than the temperature at which the crystallization progresses.
【００３２】なお、Ｒ≧１０は、スパッタ装置や成膜圧
力等の条件が異なると変動するので、必要に応じて変更
する。そして、ＩＴＯターゲット４５に対するＤＣ電源
Ｂの負の直流電圧の印加により、酸素ガス流及びアルゴ
ンガス流を放電させてＩＴＯターゲット４５にスパッタ
リングを施し、絶縁性保護膜１６を複数条の電極１５の
内表面に成膜する。一方、絶縁性保護膜２３も、絶縁性
保護膜１６の場合と同様にして、複数条の電極２３の表
面に成膜する。Since R ≧ 10 varies depending on the conditions such as the sputtering apparatus and the film forming pressure, it is changed as necessary. Then, by applying a negative DC voltage of the DC power source B to the ITO target 45, the oxygen gas flow and the argon gas flow are discharged to cause the ITO target 45 to be sputtered, so that the insulating protective film 16 is formed within the plurality of electrodes 15. Form a film on the surface. On the other hand, the insulating protective film 23 is also formed on the surface of the plurality of electrodes 23 in the same manner as the insulating protective film 16.
【００３３】このようにして両保護膜１６、２３を形成
した後は、各保護膜１６、２３の内表面にそれぞれ配向
膜１７、２４を形成するとともに、これら各配向膜１
７、２４をラビング処理してカラーフィルタ基板１０及
び対向基板２０の製造を終了する。然る後、これらカラ
ーフィルタ基板１０及び対向基板２０を所定間隙を介し
て対向させ、これらの間の液晶３０を封入する。これに
より、液晶基板の製造が完了する。After both protective films 16 and 23 are formed in this manner, alignment films 17 and 24 are formed on the inner surfaces of the protective films 16 and 23, respectively, and the alignment films 1 and 2 are formed.
7 and 24 are rubbed to complete the manufacture of the color filter substrate 10 and the counter substrate 20. After that, the color filter substrate 10 and the counter substrate 20 are opposed to each other with a predetermined gap, and the liquid crystal 30 between them is sealed. This completes the manufacture of the liquid crystal substrate.
【００３４】ちなみに、本実施例における保護膜１６或
いは２３の屈折率とガス流量比率Ｒとの関係を調べてみ
たところ、図４の特性曲線により示すごとく、ガス流量
比率Ｒ即ち酸素ガス流量の変化による保護膜１６或いは
２３の屈折率の変動が小さいことも分かった。このこと
は、保護膜１６或いは２３をＩＴＯ抵抗膜により形成し
た場合、例えば、Ｔａ2 Ｏ5 （ｎ＝２．２を有する）に
より形成する場合に比べて、電極１５或いは２２の屈折
率の差が小さいことを意味する。従って、絶縁性保護膜
と電極との境界面における反射率は、本実施例の方が小
さくなることが分かった。By the way, the relationship between the refractive index of the protective film 16 or 23 and the gas flow rate R in this example was examined, and as shown by the characteristic curve in FIG. 4, the change of the gas flow rate R, that is, the oxygen gas flow rate. It was also found that the fluctuation of the refractive index of the protective film 16 or 23 due to the above was small. This means that when the protective film 16 or 23 is formed of an ITO resistance film, the difference in the refractive index of the electrodes 15 or 22 is greater than that when formed of Ta 2 O 5 (having n = 2.2), for example. Means small. Therefore, it was found that the reflectance at the interface between the insulating protective film and the electrode was smaller in this example.
【００３５】以上説明したように、本実施例では、両絶
縁性保護膜１６及び２３が、上述のようなＩＴＯからな
る抵抗膜により形成されているので、保護膜１６と電極
１５との各屈折率の差及び保護膜２３と電極２２との各
屈折率の差が共に小さくなる。従って、保護膜１６と電
極１５との境界面における光の反射率及び保護膜２３と
電極２２との境界面における光の反射率が共に小さくな
る。その結果、両保護膜１６及び２３の絶縁性を確保し
つつ液晶基板を通る光源の光の透過率、即ち輝度を高め
ることができる。As described above, in this embodiment, since both insulating protective films 16 and 23 are formed of the resistance film made of ITO as described above, each refraction of the protective film 16 and the electrode 15 is prevented. Both the difference in refractive index and the difference in refractive index between the protective film 23 and the electrode 22 are reduced. Therefore, the reflectance of light at the interface between the protective film 16 and the electrode 15 and the reflectance of light at the interface between the protective film 23 and the electrode 22 are both small. As a result, it is possible to increase the transmittance of light of the light source passing through the liquid crystal substrate, that is, the brightness while ensuring the insulating properties of both protective films 16 and 23.
【００３６】また、上述のように、両絶縁性保護膜１
６、２３を、それぞれ、両電極１５、２２の形成材料と
同一の材料、即ち、ＩＴＯにより形成するようにしたの
で、保護膜１６と電極１５との各屈折率の差及び保護膜
２３と電極２２との各屈折率の差をそれぞれ小さくする
ことが容易である。かかる場合、両絶縁性保護膜１６、
２３の成膜条件を、両電極１５、２２の成膜条件に対
し、上述のごとくガス流量比率Ｒを変更するのみでよい
ので、両電極１５、２２の成膜に使用するスパッタ装置
４０のＩＴＯターゲットをそのまま使用できる。従っ
て、他の材料のターゲットへの交換等を必要とせず、液
晶基板の製造上のメリットが大きい。Further, as described above, both insulating protective films 1
Since 6 and 23 are made of the same material as that of the electrodes 15 and 22, that is, ITO, respectively, the difference in refractive index between the protective film 16 and the electrode 15 and the protective film 23 and the electrode are different from each other. It is easy to reduce the difference between the respective refractive indices and 22. In such a case, both insulating protective films 16,
Since the film forming conditions of No. 23 need only be changed by the gas flow rate ratio R as described above with respect to the film forming conditions of both electrodes 15 and 22, the ITO of the sputtering device 40 used for film forming of both electrodes 15 and 22 is You can use the target as it is. Therefore, it is not necessary to replace the target with another material, which is a great advantage in manufacturing the liquid crystal substrate.
【００３７】なお、本発明の実施にあたっては、上記実
施例にて述べた液晶基板に限ることなく、両電極基板の
間に液晶を封入してなる各種の液晶基板において、電極
基板の電極を保護する絶縁性保護膜に対し本発明を適用
して実施してもよい。また、上記実施例においては、透
明導電膜をＩＴＯにより形成する例について説明した
が、これに限らず、透明導電膜を、例えば、ＳｎＯ2 を
主成分とし、これにＳｂ2 Ｏ3 をドープした組成物でも
って形成するようにしてもよい。In carrying out the present invention, not only the liquid crystal substrates described in the above embodiments, but also various liquid crystal substrates in which liquid crystal is sealed between both electrode substrates, the electrodes of the electrode substrates are protected. The present invention may be applied to an insulating protective film to be implemented. In addition, in the above-mentioned embodiment, an example in which the transparent conductive film is formed of ITO has been described, but the present invention is not limited to this, and the transparent conductive film contains, for example, SnO 2 as a main component and is doped with Sb 2 O 3 . It may be formed from a composition.
【００３８】また、本発明の実施にあたっては、スパッ
タ装置によるスパッタに限ることなく、蒸着やイオンプ
レーティングによって、両絶縁性保護膜１６、２３を成
膜するようにしてもよい。また、上記実施例において
は、両絶縁性保護膜１６、２３に本発明を適用した例に
ついて説明したが、これに代えて、両絶縁性保護膜１
６、２３の一方にのみ本発明を適用して実施してもよ
い。Further, in carrying out the present invention, the both insulating protective films 16 and 23 may be formed by vapor deposition or ion plating, not limited to sputtering by a sputtering apparatus. Further, in the above-mentioned embodiment, the example in which the present invention is applied to the both insulating protective films 16 and 23 has been described, but instead of this, the both insulating protective films 1
The present invention may be applied to only one of 6 and 23 for implementation.
【００３９】また、本発明の実施にあたり、絶縁性保護
膜の成膜にあたり、ガス流量比率Ｒの設定は、真空チャ
ンバ４１内への酸素ガス流量及びアルゴンガス流量の少
なくとも一方を調整して行えばよく、これにより、上記
実施例と同様の作用効果を達成できる。また、本発明の
実施にあたっては、真空チャンバ４１内の温度或いは真
空度が低い程ＩＴＯの抵抗値が増すという現象を利用す
ることにより、絶縁性保護膜を成膜してもよく、また、
当該現象をガス流量比率Ｒの設定に加味して絶縁性保護
膜を成膜するようにしてもよい。In the practice of the present invention, when forming the insulating protective film, the gas flow rate R is set by adjusting at least one of the oxygen gas flow rate and the argon gas flow rate into the vacuum chamber 41. Of course, this makes it possible to achieve the same effect as that of the above embodiment. Further, in carrying out the present invention, the insulating protective film may be formed by utilizing the phenomenon that the resistance value of ITO increases as the temperature or vacuum degree in the vacuum chamber 41 decreases.
The phenomenon may be added to the setting of the gas flow rate ratio R to form the insulating protective film.
【図１】本発明の一実施例を示す液晶基板の要部断面図
である。FIG. 1 is a cross-sectional view of a main part of a liquid crystal substrate showing an embodiment of the present invention.
【図２】スパッタ装置の概略断面図である。FIG. 2 is a schematic sectional view of a sputtering apparatus.
【図３】ＩＴＯの比抵抗とガス流量比率Ｒの関係を示す
グラフである。FIG. 3 is a graph showing the relationship between the specific resistance of ITO and the gas flow rate ratio R.
【図４】絶縁性保護膜の屈折率とガス流量比率Ｒの関係
を示すグラフである。FIG. 4 is a graph showing the relationship between the refractive index of the insulating protective film and the gas flow rate ratio R.
【図５】絶縁性保護膜の屈折率と電極の屈折率との関係
を調べるための試料とまる液晶基板の要部断面図であ
る。FIG. 5 is a cross-sectional view of essential parts of a liquid crystal substrate that serves as a sample for investigating the relationship between the refractive index of an insulating protective film and the refractive index of an electrode.
【図６】図５の試料において絶縁性保護膜の屈折率を変
化させた場合の表示光源からの光の反射率の変化を示す
グラフである。6 is a graph showing a change in reflectance of light from a display light source when the refractive index of the insulating protective film is changed in the sample of FIG.
１０・・・カラーフィルタ基板、１５、２２・・・電
極、１６、２３・・・絶縁性保護膜、２０・・・対向基
板、３０・・・液晶。10 ... Color filter substrate, 15, 22 ... Electrode, 16, 23 ... Insulating protective film, 20 ... Counter substrate, 30 ... Liquid crystal.
Claims (3)
とをそれぞれ有する両電極基板と、これら両電極基板の
間に封入した液晶とを備えた液晶基板において、 前記各絶縁性保護膜の少なくとも一方が、前記電極の形
成材料と同一の材料からなる抵抗膜でもって構成されて
いることを特徴とする液晶基板。1. A liquid crystal substrate comprising both electrode substrates each having an electrode and an insulative protective film for protecting the electrode, and a liquid crystal sealed between the both electrode substrates. A liquid crystal substrate, at least one of which is constituted by a resistance film made of the same material as the material for forming the electrodes.
成物からなる導電膜によりそれぞれ構成され、 前記各絶縁性保護膜の少なくとも一方が、前記酸化組成
物からなる抵抗膜により構成されていることを特徴とす
る請求項１に記載の液晶基板。2. Each of the electrodes is made of a conductive film made of an indium and tin oxide composition, and at least one of the insulating protective films is made of a resistance film made of the oxide composition. The liquid crystal substrate according to claim 1, wherein the liquid crystal substrate is a liquid crystal substrate.
とをそれぞれ有する両電極基板の間に液晶を封入してな
る液晶基板の製造方法において、 前記各電極を、インジウムと錫の酸化組成物でもって導
電膜としてそれぞれ形成し、 前記各絶縁性保護膜の少なくとも一方を、前記酸化組成
物でもって抵抗膜として形成することを特徴とする液晶
基板の製造方法。3. A method of manufacturing a liquid crystal substrate, wherein liquid crystal is sealed between both electrode substrates each having an electrode and an insulating protective film for protecting the electrode, wherein each electrode is composed of an indium and tin oxide composition. A method for manufacturing a liquid crystal substrate, characterized in that at least one of the insulating protective films is formed as a resistance film with the oxidation composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP829595A JPH08201790A (en) | 1995-01-23 | 1995-01-23 | Liquid crystal substrat and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP829595A JPH08201790A (en) | 1995-01-23 | 1995-01-23 | Liquid crystal substrat and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08201790A true JPH08201790A (en) | 1996-08-09 |
Family
ID=11689176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP829595A Pending JPH08201790A (en) | 1995-01-23 | 1995-01-23 | Liquid crystal substrat and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08201790A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100370330C (en) * | 2003-12-26 | 2008-02-20 | 夏普株式会社 | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
| JP2015045786A (en) * | 2013-08-29 | 2015-03-12 | セイコーエプソン株式会社 | Method of manufacturing substrate for liquid crystal device and method of manufacturing liquid crystal device |
-
1995
- 1995-01-23 JP JP829595A patent/JPH08201790A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100370330C (en) * | 2003-12-26 | 2008-02-20 | 夏普株式会社 | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
| US7570323B2 (en) | 2003-12-26 | 2009-08-04 | Sharp Kabushiki Kaisha | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
| US7826012B2 (en) | 2003-12-26 | 2010-11-02 | Sharp Kabushiki Kaisha | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
| JP2015045786A (en) * | 2013-08-29 | 2015-03-12 | セイコーエプソン株式会社 | Method of manufacturing substrate for liquid crystal device and method of manufacturing liquid crystal device |
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