JPH08162623A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH08162623A JPH08162623A JP6306497A JP30649794A JPH08162623A JP H08162623 A JPH08162623 A JP H08162623A JP 6306497 A JP6306497 A JP 6306497A JP 30649794 A JP30649794 A JP 30649794A JP H08162623 A JPH08162623 A JP H08162623A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light receiving
- vertical transfer
- transfer register
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、画素となる受光部上に
オンチップマイクロレンズを一体に有してなる固体撮像
素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having an on-chip microlens integrally formed on a light receiving portion which becomes a pixel.
【０００２】[0002]
【従来の技術】図３及び図４は、従来のＣＣＤ固体撮像
素子の一例を示す。このＣＣＤ固体撮像素子１は、第１
導電形例えばｎ形のシリコン基板２に第１の第２導電形
即ちｐ形のウエル領域３が形成され、この第１のｐ形ウ
エル領域３内に受光部１０を構成するｎ形の不純物拡散
領域４と、垂直転送レジスタ５を構成するｎ形の転送チ
ャネル領域６並びにｐ形のチャネルストップ領域７が形
成され、上記ｎ形の不純物拡散領域４上にｐ形の正電荷
蓄積領域８が、ｎ形の転送チャネル領域６の直下に第２
のｐ形ウエル領域９が夫々形成される。2. Description of the Related Art FIGS. 3 and 4 show an example of a conventional CCD solid-state image pickup device. This CCD solid-state image sensor 1 is
A first second conductivity type, that is, a p-type well region 3 is formed on a silicon substrate 2 of a conductivity type, for example, an n-type, and an n-type impurity diffusion forming a light receiving portion 10 is formed in the first p-type well region 3. A region 4, an n-type transfer channel region 6 and a p-type channel stop region 7 forming the vertical transfer register 5 are formed, and a p-type positive charge storage region 8 is formed on the n-type impurity diffusion region 4. A second layer is provided immediately below the n-type transfer channel region 6.
P-type well regions 9 are formed respectively.
【０００３】ここで、ｎ形の不純物拡散領域４とｐ形ウ
エル領域３とのｐｎ接合ｊによるフォトダイオードＰＤ
によって受光部（光電変換部）１０が構成される。この
受光部１０は画素に対応して形成され、複数個マトリッ
クス状に配列される。各受光部列の１側には垂直転送レ
ジスタ５が配される。Here, the photodiode PD is formed by the pn junction j of the n-type impurity diffusion region 4 and the p-type well region 3.
The light receiving unit (photoelectric conversion unit) 10 is configured by. The light receiving portions 10 are formed corresponding to the pixels, and a plurality of light receiving portions 10 are arranged in a matrix. A vertical transfer register 5 is arranged on one side of each light receiving unit row.
【０００４】そして、垂直転送レジスタ５を構成する転
送チャネル領域６、チャネルストップ領域７及び後述す
る読み出しゲート部１１上に例えばＳｉＯ2 膜１２を介
してＳｉＮ膜１３が積層される。このＳｉＯ2 膜１２及
びＳｉＮ膜１３による２層構造のゲート絶縁膜１５上に
多結晶シリコンからなる転送電極１６が形成され、転送
チャネル領域６、ゲート絶縁膜１５及び転送電極１６に
よりＣＣＤ構造の垂直転送レジスタ５が構成される。Then, a SiN film 13 is laminated on the transfer channel region 6, the channel stop region 7 and the read gate portion 11 which will be described later, which constitute the vertical transfer register 5, with a SiO 2 film 12 interposed therebetween. A transfer electrode 16 made of polycrystalline silicon is formed on the gate insulating film 15 having a two-layer structure composed of the SiO 2 film 12 and the SiN film 13, and the transfer channel region 6, the gate insulating film 15 and the transfer electrode 16 form a vertical structure of the CCD structure. The transfer register 5 is configured.
【０００５】転送電極１６の表面にはＳｉＯ2 膜１４が
形成され、この転送電極１６及び受光部の正電荷蓄積領
域８上を含む全面に、例えばＰＳＧ（リン・シリケート
ガラス）からなる層間絶縁膜１７が積層され、更に転送
電極１６上に上記層間絶縁膜１７を介してＡｌ遮光膜１
８が選択的に形成される。An SiO 2 film 14 is formed on the surface of the transfer electrode 16, and an interlayer insulating film made of, for example, PSG (phosphorus silicate glass) is formed on the entire surface including the transfer electrode 16 and the positive charge storage region 8 of the light receiving portion. 17 is laminated, and the Al light-shielding film 1 is further provided on the transfer electrode 16 via the interlayer insulating film 17.
8 are selectively formed.
【０００６】Ａｌ遮光部１８には、受光部１０から直接
垂直転送レジスタ５に入射される光（斜めに入射される
光）を阻止するために、受光部１０側に一部延長するは
り出し部１８ａが一体に設けられる。そして、このＡｌ
遮光膜１８を含む全面上に例えばプラズマＳｉＮ膜１９
及び平坦化膜２０が順次形成される。この平坦化膜２０
上にカラーフィルタ層２１が形成され、更に、カラーフ
ィルタ層２１上の受光部１０に対応する位置に集光用の
オンチップマイクロレンズ２２が形成される。The Al light-shielding portion 18 has a projecting portion which is partially extended to the light-receiving portion 10 side in order to block light that is directly incident on the vertical transfer register 5 from the light-receiving portion 10 (light that is obliquely incident). 18a is integrally provided. And this Al
For example, a plasma SiN film 19 is formed on the entire surface including the light shielding film 18.
And the planarization film 20 is sequentially formed. This flattening film 20
The color filter layer 21 is formed thereon, and the on-chip microlens 22 for condensing light is further formed on the color filter layer 21 at a position corresponding to the light receiving unit 10.
【０００７】転送電極１６は、垂直転送レジスタ５と受
光部１０間に延長形成され、ここに読み出しゲート部１
１が構成される。２３はＡｌ遮光膜１８の開口部であ
る。The transfer electrode 16 is formed so as to extend between the vertical transfer register 5 and the light receiving portion 10, and the read gate portion 1 is provided there.
1 is configured. Reference numeral 23 is an opening of the Al light shielding film 18.
【０００８】[0008]
【発明が解決しようとする課題】従来の固体撮像素子１
におけるＡｌ遮光膜１８は、図３に示すように、比較的
薄く、垂直転送レジスタ５の転送電極１６に沿うように
形成され、垂直転送レジスタ５から受光部１０にかけて
のはり出し部１８ａにおいて、段差２４が形成される。
このため、オンチップマイクロレンズ２２で集光された
光Ｌが、一部はり出し部１８ａの段差２４で反射し、こ
の反射光が画素の外に出てしまい、無駄になるという不
都合があった。Conventional solid-state image pickup device 1
3, the Al light-shielding film 18 is relatively thin and is formed along the transfer electrode 16 of the vertical transfer register 5, and a step is formed in the protruding portion 18a from the vertical transfer register 5 to the light receiving portion 10. 24 is formed.
Therefore, the light L condensed by the on-chip microlens 22 is partially reflected by the step 24 of the projecting portion 18a, and this reflected light goes out of the pixel and is wasted. .
【０００９】本発明は、上述の点に鑑み、オンチップマ
イクロレンズで集光された光の利用率を高め受光感度を
向上させると共に、スミア発生をも低減できるようにし
た固体撮像素子を提供するものである。In view of the above points, the present invention provides a solid-state image pickup device capable of increasing the utilization rate of light condensed by an on-chip microlens, improving the light receiving sensitivity, and reducing the occurrence of smear. It is a thing.
【００１０】[0010]
【課題を解決するための手段】本発明は、受光部１０の
１側に垂直転送レジスタ５が配され、垂直転送レジスタ
５上を覆って遮光膜３１が形成され、受光部１０上に対
応する位置にオンチップマイクロレンズ２２が設けられ
てなる固体撮像素子において、遮光膜３１が垂直転送レ
ジスタ５上から同じ高さで受光部１０側に延長して終端
するように形成された構成とする。According to the present invention, the vertical transfer register 5 is arranged on one side of the light receiving section 10, and the light shielding film 31 is formed so as to cover the vertical transfer register 5 and correspond to the light receiving section 10. In the solid-state imaging device in which the on-chip microlens 22 is provided at the position, the light shielding film 31 is formed so as to extend to the light receiving unit 10 side at the same height from the vertical transfer register 5 and terminate.
【００１１】[0011]
【作用】本発明においては、遮光膜３１が垂直転送レジ
スタ５上から同じ高さで受光部１０側に延長して終端す
るように形成されるので、遮光膜３１の受光部１０に対
応した開口部３２において従来のような段差２４が形成
されない。従って、オンチップマイクロレンズ２２で集
光された光が一部遮光膜３１の開口端面３２ａで反射し
ても、その反射光は全て受光部１０に入射されることに
なる。この結果、光利用率が高くなり受光感度が向上す
る。また遮光膜３１の一部は受光部１０に延長して形成
されることにより、受光部１０からの直接垂直転送レジ
スタ５に入射される光が阻止され、スミアの発生を低減
させることができる。In the present invention, since the light-shielding film 31 is formed so as to extend from the vertical transfer register 5 to the light-receiving portion 10 side at the same height and end, the opening of the light-shielding film 31 corresponding to the light-receiving portion 10 is formed. The step 24 unlike the conventional case is not formed in the portion 32. Therefore, even if the light collected by the on-chip microlens 22 is partially reflected by the opening end face 32a of the light shielding film 31, all the reflected light is incident on the light receiving unit 10. As a result, the light utilization rate is increased and the light receiving sensitivity is improved. Further, since a part of the light shielding film 31 is formed so as to extend to the light receiving portion 10, the light directly incident on the vertical transfer register 5 from the light receiving portion 10 is blocked, and the occurrence of smear can be reduced.
【００１２】[0012]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】図１及び図２は本発明によるＣＣＤ固体撮
像素子の一例を示す。本例のＣＣＤ固体撮像素子３０に
おいては、第１導電形例えばｎ形のシリコン基板２に第
１の第２導電形即ちｐ形のウエル領域３が形成され、こ
の第１のｐ形ウエル領域３内に受光部１０を構成するｎ
形の不純物拡散領域４と、垂直転送レジスタ５を構成す
るｎ形の転送チャネル領域６並びにｐ形のチャネルスト
ップ領域７が形成され、上記ｎ形の不純物拡散領域４上
にｐ形の正電荷蓄積領域８が、ｎ形の転送チャネル領域
６の直下に第２のｐ形ウエル領域９が夫々形成される。1 and 2 show an example of a CCD solid-state image pickup device according to the present invention. In the CCD solid-state imaging device 30 of the present example, a first conductivity type, for example, an n-type silicon substrate 2 is formed with a first second conductivity type, that is, a p-type well region 3, and the first p-type well region 3 is formed. N which constitutes the light receiving unit 10
-Type impurity diffusion region 4, an n-type transfer channel region 6 and a p-type channel stop region 7 forming a vertical transfer register 5 are formed, and p-type positive charge accumulation is performed on the n-type impurity diffusion region 4. A region 8 and a second p-type well region 9 are formed immediately below the n-type transfer channel region 6, respectively.
【００１４】ここで、ｎ形の不純物拡散領域４とｐ形ウ
エル領域３とのｐｎ接合ｊによるフォトダイオードＰＤ
によって受光部（光電変換部）１０が構成される。この
受光部１０は画素に対応して形成され、複数個、マトリ
ックス状に配列される。各受光部列の１側には垂直転送
レジスタ５が配される。Here, the photodiode PD is formed by the pn junction j of the n-type impurity diffusion region 4 and the p-type well region 3.
The light receiving unit (photoelectric conversion unit) 10 is configured by. The light receiving units 10 are formed corresponding to the pixels, and a plurality of the light receiving units 10 are arranged in a matrix. A vertical transfer register 5 is arranged on one side of each light receiving unit row.
【００１５】そして、垂直転送レジスタ５を構成する転
送チャネル領域６、チャネルストップ領域７及び読み出
しゲート部１１上に例えばＳｉＯ2 膜１２を介してＳｉ
Ｎ膜１３が積層される。このＳｉＯ2 膜１２及びＳｉＮ
膜１３による２層構造のゲート絶縁膜１５上に多結晶シ
リコンからなる転送電極１６が形成され、転送チャネル
領域６、ゲート絶縁膜１５及び転送電極１６によりＣＣ
Ｄ構造の垂直転送レジスタ５が構成される。Then, Si is formed on the transfer channel region 6, the channel stop region 7 and the read gate portion 11 which constitute the vertical transfer register 5 with the SiO 2 film 12 interposed therebetween.
The N film 13 is laminated. This SiO 2 film 12 and SiN
A transfer electrode 16 made of polycrystalline silicon is formed on the gate insulating film 15 having a two-layer structure of the film 13, and the transfer channel region 6, the gate insulating film 15 and the transfer electrode 16 form a CC.
A vertical transfer register 5 having a D structure is configured.
【００１６】転送電極１６の表面にはＳｉＯ2 膜１４が
形成され、この転送電極１６及び受光部の正電荷蓄積領
域８上を含む全面に、例えばＰＳＧ（リン・シリケート
ガラス）からなる層間絶縁膜１７が積層され、更に転送
電極１６上に上記層間絶縁膜１７を介してＡｌ遮光膜３
１が選択的に形成される。An SiO 2 film 14 is formed on the surface of the transfer electrode 16, and an interlayer insulating film made of, for example, PSG (phosphorus silicate glass) is formed on the entire surface including the transfer electrode 16 and the positive charge storage region 8 of the light receiving portion. 17 is laminated, and the Al light-shielding film 3 is further provided on the transfer electrode 16 via the interlayer insulating film 17.
1 is selectively formed.
【００１７】そして、本例では、特にＡｌ遮光膜３１を
垂直転送レジスタ５上から同じ高さで受光部１０側に延
長して終端するように形成する。即ち、Ａｌ遮光膜３１
を厚く形成し、受光部１０に対応する開口部３２におい
て段差が生じないようにする。Ａｌ遮光膜３１は、丁度
従来のはり出し部１８ａと同じ長さにわたって受光部１
０上に延長するように形成される。In this example, the Al light-shielding film 31 is formed so as to extend from the vertical transfer register 5 to the light receiving portion 10 side at the same height and terminate. That is, the Al light shielding film 31
Is formed thick so that no step is formed in the opening 32 corresponding to the light receiving portion 10. The Al light-shielding film 31 has exactly the same length as the conventional protruding portion 18a and has the same length as the light receiving portion 1.
It is formed so as to extend above 0.
【００１８】このＡｌ遮光膜３１を含む全面上に例えば
プラズマＳｉＮ膜１９及び平坦化膜２０が順次形成さ
れ、この平坦化膜２０上にカラーフィルタ層２１が形成
され、更にカラーフィルタ層２１上の受光部１０に対応
する位置に入射光を受光部１０に集光させるためのオン
チップマイクロレンズ２２が形成される。For example, a plasma SiN film 19 and a flattening film 20 are sequentially formed on the entire surface including the Al light-shielding film 31, a color filter layer 21 is formed on the flattening film 20, and further on the color filter layer 21. An on-chip microlens 22 for condensing incident light on the light receiving unit 10 is formed at a position corresponding to the light receiving unit 10.
【００１９】上述した本実施例によれば、Ａｌ遮光膜３
１を、厚くすると共に垂直転送レジスタ５上より同じ高
さで受光部１０側に延長して終端するように形成するこ
とにより、Ａｌ遮光膜３１の開口部３２において従来の
ような段差２４が形成されず、オンチップマイクロレン
ズ２２で集光された光Ｌが一部Ａｌ遮光膜３１の開口端
面３２ａで反射しても、その反射光に全て受光部１０側
に入射されることになる。この結果、受光感度を向上す
ることができる。また、Ａｌ遮光膜３１は一部受光部１
０側に延長して形成されているので、受光部１０からの
直接垂直転送レジスタ５に入射される光が阻止され、ス
ミアの発生を低減することができる。According to this embodiment described above, the Al light-shielding film 3 is formed.
1 is formed so as to be thick and extend to the light receiving portion 10 side at the same height as above the vertical transfer register 5 and terminate at the opening 32 of the Al light shielding film 31. Even if a part of the light L collected by the on-chip microlens 22 is reflected by the opening end face 32a of the Al light-shielding film 31, all of the reflected light is incident on the light receiving unit 10 side. As a result, the light receiving sensitivity can be improved. In addition, the Al light-shielding film 31 is partially provided in the light receiving portion 1.
Since it is formed to extend to the 0 side, the light directly incident on the vertical transfer register 5 from the light receiving unit 10 is blocked, and the occurrence of smear can be reduced.
【００２０】上述の本発明に係るＣＣＤ固体撮像素子
は、フレームインターライン転送方式、インターライン
転送方式等のＣＣＤ固体撮像素子に適用できる。The CCD solid-state image pickup device according to the present invention described above can be applied to a CCD solid-state image pickup device of a frame interline transfer system, an interline transfer system or the like.
【００２１】[0021]
【発明の効果】本発明によれば、垂直転送レジスタを覆
う遮光膜を、垂直転送レジスタから同じ高さで受光部側
に延長して終端するように形成することにより、受光部
に入射する光の利用率が上がり、受光感度を向上するこ
とができ、またスミアの発生を低減することができる。According to the present invention, the light-shielding film covering the vertical transfer register is formed so as to extend from the vertical transfer register to the light receiving portion side at the same height and terminate at the same height. It is possible to increase the utilization rate of the light source, improve the light receiving sensitivity, and reduce the occurrence of smear.
【図１】本発明に係るＣＣＤ固体撮像素子の一例を示す
断面図である。FIG. 1 is a sectional view showing an example of a CCD solid-state image sensor according to the present invention.
【図２】図１のＣＣＤ固体撮像素子の１画素に対応した
上面図である。FIG. 2 is a top view corresponding to one pixel of the CCD solid-state imaging device of FIG.
【図３】従来のＣＣＤ固体撮像素子の例を示す断面図で
ある。FIG. 3 is a sectional view showing an example of a conventional CCD solid-state imaging device.
【図４】図３のＣＣＤ固体撮像素子の１画素に対応した
上面図である。FIG. 4 is a top view corresponding to one pixel of the CCD solid-state image sensor of FIG.
１，３０ ＣＣＤ固体撮像素子 ２ ｎ形シリコン基板 ３ 第１のｐ形ウエル領域 ４ ｎ形不純物拡散領域 ５ 垂直転送レジスタ ６ 転送チャネル領域 ７ チャネルストップ領域 ８ 正電荷蓄積領域 ９ 第２のｐ形ウエル領域 １０ 受光部 １１ 読み出しゲート部 １２ ＳｉＯ2 膜 １３ ＳｉＮ膜 １４ ＳｉＯ2 膜 １５ ゲート絶縁膜 １６ 転送電極 １７ 層間絶縁膜 １８，３１ Ａｌ遮光膜 １８ａ はり出し部 １９ プラズマＳｉＮ膜 ２０ 平坦化膜 ２１ カラーフィルタ層 ２２ オンチップマイクロレンズ ２３，３２ 開口部 ３２ａ 開口端面1,30 CCD solid-state imaging device 2 n-type silicon substrate 3 first p-type well region 4 n-type impurity diffusion region 5 vertical transfer register 6 transfer channel region 7 channel stop region 8 positive charge storage region 9 second p-type well Region 10 Light receiving part 11 Read gate part 12 SiO 2 film 13 SiN film 14 SiO 2 film 15 Gate insulating film 16 Transfer electrode 17 Interlayer insulating film 18, 31 Al light-shielding film 18a Overhang part 19 Plasma SiN film 20 Flattening film 21 Color Filter layer 22 On-chip microlens 23, 32 Opening 32a Opening end face
Claims (1)
れ、該垂直転送レジスタ上を覆って遮光膜が形成され、
上記受光部上に対応する位置にオンチップマイクロレン
ズが設けられてなる固体撮像素子において、上記遮光膜
が上記垂直転送レジスタ上から同じ高さで上記受光部側
に延長して終端するように形成されて成ることを特徴と
する固体撮像素子。1. A vertical transfer register is disposed on one side of the light receiving portion, and a light shielding film is formed so as to cover the vertical transfer register.
In a solid-state imaging device in which an on-chip microlens is provided at a position corresponding to the light receiving portion, the light shielding film is formed so as to extend to the light receiving portion side at the same height from the vertical transfer register and terminate. A solid-state image pickup device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6306497A JPH08162623A (en) | 1994-12-09 | 1994-12-09 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6306497A JPH08162623A (en) | 1994-12-09 | 1994-12-09 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08162623A true JPH08162623A (en) | 1996-06-21 |
Family
ID=17957742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6306497A Pending JPH08162623A (en) | 1994-12-09 | 1994-12-09 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08162623A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007173717A (en) * | 2005-12-26 | 2007-07-05 | Fujifilm Corp | Solid imaging element, and method for manufacturing same |
| CN100437977C (en) * | 2005-01-27 | 2008-11-26 | 索尼株式会社 | Method for manufacturing solid image forming device, solid image forming device and camera |
-
1994
- 1994-12-09 JP JP6306497A patent/JPH08162623A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437977C (en) * | 2005-01-27 | 2008-11-26 | 索尼株式会社 | Method for manufacturing solid image forming device, solid image forming device and camera |
| JP2007173717A (en) * | 2005-12-26 | 2007-07-05 | Fujifilm Corp | Solid imaging element, and method for manufacturing same |
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