JPH081494A - Wafer material edge end part polishing device - Google Patents
Wafer material edge end part polishing deviceInfo
- Publication number
- JPH081494A JPH081494A JP16735394A JP16735394A JPH081494A JP H081494 A JPH081494 A JP H081494A JP 16735394 A JP16735394 A JP 16735394A JP 16735394 A JP16735394 A JP 16735394A JP H081494 A JPH081494 A JP H081494A
- Authority
- JP
- Japan
- Prior art keywords
- wafer material
- tape
- wafer
- polishing
- tangential direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は例えばシリコンからなる
半導体ウエハーの縁端面の研磨加工に用いられるウエハ
ー材縁端部研磨装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer material edge polishing apparatus used for polishing edge surfaces of semiconductor wafers made of, for example, silicon.
【０００２】[0002]
【従来の技術】従来この種の半導体ウエハーの縁端面を
加工する装置としてベベリング装置なるものが知られて
いる。2. Description of the Related Art Conventionally, a beveling device is known as a device for processing an edge surface of a semiconductor wafer of this type.
【０００３】図１３、１４に示すように、例えばウエハ
ー材Ｗは厚さｔ＝６００〜７００μｍのシリコン等から
なる薄板状に形成され、例えばＤ＝６インチの円周状の
端縁Ｆ1及びＢ＝４７ｍｍの直線状の端縁Ｆ2（オリエン
テーションフラット）からなる端縁Ｆを有し、この端縁
Ｆ1及び端縁Ｆ2の表裏両端縁形状は例えば端面Ｓの幅ｔ
1＝２００μｍ、Ｎ＝２００〜４００μｍ、各々の傾斜
縁面Ｍ・Ｍの角度θ＝２２゜、Ｒ＝１２５μｍに定めら
れている。As shown in FIGS. 13 and 14, for example, a wafer material W is formed in a thin plate shape made of silicon or the like having a thickness t = 600 to 700 μm, and has a circumferential edge F 1 and D = 6 inches, for example. B = 47 mm has an edge F formed of a linear edge F 2 (orientation flat), and the front and back edges of the edge F 1 and the edge F 2 have, for example, a width t of the end surface S.
1 = 200 .mu.m, N = 200 to 400 .mu.m, the angle .theta. = 22 DEG and R = 125 .mu.m of each inclined edge surface MM.
【０００４】そして上記従来構造のものは、ウエハー材
Ｗの表裏両端縁形状に適合させた凹周面を有する総形状
の回転砥石を用い、この回転砥石をウエハー材Ｗの縁端
面Ｆに圧接させて研磨加工を行うように構成されてい
る。In the conventional structure described above, a rotary grindstone having a total shape having concave peripheral surfaces adapted to the front and back edges of the wafer material W is used, and the rotary grindstone is pressed against the edge surface F of the wafer material W. Is configured to perform polishing processing.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら回転砥石
を用いる従来構造の場合、砥石のドレッシング加工が不
可欠となり、かつ砥石の回転作用のみによる研磨作用で
あるため満足し得る研磨面の状態にならないことがある
とともにチッピングが生じ易いという不都合を有してい
る。However, in the case of the conventional structure using the rotary grindstone, dressing processing of the grindstone is indispensable, and since the polishing operation is performed only by the rotating operation of the grindstone, the state of the satisfactory polishing surface may not be obtained. In addition, there is a disadvantage that chipping easily occurs.
【０００６】[0006]
【課題を解決するための手段】本発明はこのような課題
を解決することを目的とするもので、その要旨は、ウエ
ハー材をその軸線廻りに支持回転させる回転機構と、研
磨テープをウエハー材の接線方向に連続移送させるテー
プ移送機構と、該テープ移送機構を進退移動させる移動
機構と、該研磨テープをウエハー材の表裏両端縁を挟み
込む状態の略Ｖ状に案内可能なテープガイド部とを具備
したことを特徴とするウエハー材縁端部研磨装置にあ
る。SUMMARY OF THE INVENTION An object of the present invention is to solve such a problem, and its gist is to provide a rotating mechanism for supporting and rotating a wafer material about its axis, and a polishing tape for the wafer material. A tape transport mechanism for continuously transporting the tape in a tangential direction, a moving mechanism for moving the tape transport mechanism forward and backward, and a tape guide portion capable of guiding the polishing tape in a substantially V shape in a state of sandwiching both front and back edges of the wafer material. A wafer material edge polishing apparatus is provided.
【０００７】この際、上記テープ移送機構をウエハー材
の接線方向に揺振運動させる揺振機構を設けることが望
ましく、また上記テープ移送機構をウエハー材の接線方
向に送り運動させる送り機構を設けることができ、又上
記テープガイド部に上記ウエハー材の表裏両端縁の各々
の傾斜縁面に対面する方向に進退可能な一対の押圧部材
を配設し、該押圧部材を該傾斜縁面側に弾圧可能な弾圧
機構を配設し、該ウエハー材の端面に当接可能な位置決
め部材を配設することができ、又上記押圧部材の首振揺
動を可能とする首振機構を配設することが望ましい。At this time, it is desirable to provide a swing mechanism for swinging the tape transport mechanism in the tangential direction of the wafer material, and also to provide a feed mechanism for transporting the tape transport mechanism in the tangential direction of the wafer material. The tape guide portion is provided with a pair of pressing members capable of advancing and retreating in the direction facing the respective inclined edge surfaces of both front and rear edges of the wafer material, and the pressing members are elastically pressed toward the inclined edge surfaces. And a positioning mechanism capable of abutting against the end face of the wafer material, and a swing mechanism capable of swinging the pressing member. Is desirable.
【０００８】[0008]
【作用】回転機構によりウエハー材をその軸線廻りに支
持回転させ、テープ移送機構によりテープガイド部によ
ってウエハー材の表裏両端縁を挟み込む状態の略Ｖ状に
案内された研磨テープをウエハー材の接線方向に連続移
送させ、テープ移送機構を移動機構により移動させるこ
とにより研磨テープをウエハー材の端縁部分に圧接して
ウエハー材の回転及び研磨テープの移送作用によりウエ
ハー材の表裏両端縁を研磨することになる。The wafer material is supported and rotated about its axis by the rotating mechanism, and the tape transfer mechanism guides the polishing tape guided in a substantially V shape with the front and back edges of the wafer material sandwiched by the tape guide portion in the tangential direction of the wafer material. The polishing tape is pressed against the edge portion of the wafer material by moving the tape transport mechanism by the moving mechanism to polish the front and back edges of the wafer material by rotating the wafer material and transporting the polishing tape. become.
【０００９】この際上記テープ移送機構を揺振機構によ
りウエハー材の接線方向に揺振運動させることによりウ
エハー材の端縁部分をウエハー材の回転、研磨テープの
移送及び研磨テープの揺振の三つの複合作用により研磨
でき、またこの際上記テープ移送機構を送り機構により
ウエハー材の接線方向に送り運動させることができ、ま
た上記テープガイド部に上記ウエハー材の表裏両端縁の
各々の傾斜縁面に対面する方向に進退可能な一対の押圧
部材を配設し、押圧部材を弾圧機構により傾斜縁面側に
弾圧し、よって研磨テープを傾斜縁面に平行に押圧し、
ウエハー材の端面に当接可能な位置決め部材を配設する
ことにより上記所定の角度をもつ各傾斜縁面をその角度
を保持しつつ良好に研磨することができ、又上記押圧部
材の首振揺動を可能とする首振機構により傾斜縁面に倣
って研磨することができる。At this time, the tape transfer mechanism is oscillated in the tangential direction of the wafer material by the oscillating mechanism so that the edge portion of the wafer material is rotated, the polishing tape is transferred, and the polishing tape is oscillated. Polishing can be performed by two combined actions, and at this time, the tape transfer mechanism can be moved in the tangential direction of the wafer material by the feeding mechanism, and the tape guide portion can be provided with inclined surface of each of the front and back edges of the wafer material. A pair of pressing members capable of advancing and retracting in a direction facing each other are arranged, and the pressing members are elastically pressed to the inclined edge surface side by the elastic pressure mechanism, so that the polishing tape is pressed in parallel to the inclined edge surface,
By disposing a positioning member capable of contacting the end surface of the wafer material, it is possible to satisfactorily polish each inclined edge surface having the above-mentioned predetermined angle while maintaining that angle, and also to shake the head of the pressing member. It is possible to polish along the inclined edge surface by the swing mechanism that enables movement.
【００１０】[0010]
【実施例】図１乃至図１２は本発明の実施例を示し、１
は回転機構であって、図外のモータ等により回転する回
転軸２の端部に負圧吸引作用を有する吸着パッド３を取
付け、この吸着パッド３によりウエハー材Ｗの板面を吸
着し、回転軸２によりウエハー材Ｗをその軸線Ｗ1の廻
りに支持回転させるように構成している。1 to 12 show an embodiment of the present invention.
Is a rotation mechanism, and a suction pad 3 having a negative pressure suction action is attached to an end of a rotary shaft 2 rotated by a motor (not shown), and the suction pad 3 sucks a plate surface of a wafer material W for rotation. The shaft 2 is configured to support and rotate the wafer material W about its axis W 1 .
【００１１】４はテープ移送機構、５は移動機構、６は
揺振機構、７は送り機構であって、この場合移動機構５
にあっては、機台８上に基台９を固定し、基台９上に摺
動部１０により前後移動台１１を図２の左右方向である
前後方向に移動可能に設け、前後移動台１１を前後移動
させる前後動用シリンダ１２を設けてなり、また送り機
構７は、この前後移動台１１上に摺動部１３により送り
移動台１４を図１の上下方向であるウエハー材Ｗの接線
方向に移動可能に設け、送り移動台１４を左右移動させ
る送り用シリンダ１５を設けて構成されている。Reference numeral 4 is a tape transfer mechanism, 5 is a moving mechanism, 6 is a shaking mechanism, and 7 is a feeding mechanism. In this case, the moving mechanism 5 is used.
In this case, the base 9 is fixed on the machine base 8, and the front and rear moving base 11 is provided on the base 9 by the sliding portion 10 so as to be movable in the front and rear direction which is the left and right direction in FIG. A front and rear movement cylinder 12 for moving the front and rear 11 is provided, and the feed mechanism 7 has a slide portion 13 on the front and rear movement base 11 to move the feed movement base 14 in the vertical direction of FIG. And a feed cylinder 15 for moving the feed moving base 14 left and right.
【００１２】また揺振機構６は、上記送り移動台１４上
に摺動部１６により揺振台１７を図１の上下方向である
ウエハー材Ｗの接線方向に移動可能に設け、上記送り移
動台１４上にブラケット１８を取付け、ブラケット１８
に揺振用モータ１９を取付け、ブラケット１８に駆動軸
２０を軸受けし、駆動軸２０の上端部に揺振用モータ１
９の主軸を連結し、駆動軸２０の下端部に偏心軸部２０
ａを形成し、偏心軸部２０ａにカムフォロワー２１を取
付け、揺振台１７上に二個のガイド板２２をカムフォロ
ワー２１を挟装する状態に対向して取付け、揺振用モー
タ１９の駆動により駆動軸２０を回転させ、偏心軸部２
０ａに取り付けたカムフォロワー２１とガイド板２２と
の作用で上記摺動部１６によって揺振台１７を揺振運動
させるように構成している。Further, in the swing mechanism 6, the swing stand 17 is provided on the feed stand 14 by the sliding portion 16 so as to be movable in the tangential direction of the wafer material W which is the vertical direction of FIG. Mount the bracket 18 on 14
The vibration motor 19 is attached to the bracket 18, the drive shaft 20 is borne by the bracket 18, and the vibration motor 1 is mounted on the upper end of the drive shaft 20.
9 main shafts are connected to each other, and the eccentric shaft portion 20 is attached to the lower end portion of the drive shaft 20.
a, a cam follower 21 is attached to the eccentric shaft portion 20a, and two guide plates 22 are attached on the shaking table 17 so as to face each other so that the cam follower 21 is sandwiched between them, and the shaking motor 19 is driven. The drive shaft 20 is rotated by the eccentric shaft portion 2
The cam follower 21 and the guide plate 22 attached to the shaft 0a cause the swinging base 17 to swing by the sliding portion 16.
【００１３】またテープ移送機構４は、この場合上記揺
振台１７上にポリエステルフィルム、メタル、クロス等
の基材に酸化アルミニュウム、酸化クロム、シリコンカ
ーバイド、ダイヤモンド等の所定粒度の研磨粒子をコー
ティング又は結合してなる研磨テープＴの実巻リール２
３及び巻取リール２４を軸着し、揺振台１７上に軸受台
部２５を配設し、軸受台部２５に回り止め状態で支持筒
２６を配設し、支持筒２６に回り止め状態で支持軸２７
を配設し、この支持筒２６及び支持軸２７にテープガイ
ド部２８を配設し、実巻リール２３より引き出した研磨
テープＴをローラー、テープガイド部２８、ローラー、
一対の挟装ローラー２９ａ・２９ｂの間、ローラーを介
して巻取リール２４に巻回し、実巻リール２４をサーボ
モータ３０により駆動すると共に挟装ローラー２９ａを
サーボモータ３０ａにより駆動させ、かつ巻取リール２
４に挟装ローラー２９ｂの回転を図外のベルト伝導機構
により駆動し、研磨テープＴをバックテンションを付与
しつつ一方向に連続移送させるように構成している。Further, in this case, the tape transfer mechanism 4 coats a base material such as a polyester film, a metal or cloth on the shaking table 17 with abrasive particles of a predetermined particle size such as aluminum oxide, chromium oxide, silicon carbide or diamond. Real winding reel 2 of polishing tape T formed by combining
3 and the take-up reel 24 are pivotally mounted, the bearing stand portion 25 is arranged on the shaking table 17, the support cylinder 26 is arranged in the bearing stand portion 25 in a rotation-prevented state, and the support cylinder 26 is in the rotation-prevented state. With support shaft 27
And the tape guide portion 28 is arranged on the support cylinder 26 and the support shaft 27, and the polishing tape T pulled out from the actual reel 23 is used as a roller, the tape guide portion 28, a roller,
The winding reel 24 is wound between the pair of sandwiching rollers 29a and 29b via the rollers, the actual winding reel 24 is driven by the servo motor 30, and the sandwiching roller 29a is driven by the servo motor 30a, and the winding roller is wound. Reel 2
In FIG. 4, rotation of the sandwiching roller 29b is driven by a belt transmission mechanism (not shown) to continuously transfer the polishing tape T in one direction while applying back tension.
【００１４】また上記テープガイド部２８は、上記支持
筒２６に左右に向けて二股状に保持アーム３１を突設
し、保持アーム３１の先端部に折返案内面３２を形成
し、かつ保持アーム３１に山形ガイドローラ３３を取付
け、左右両側の折返案内面３２間の研磨テープＴを左右
の山形ガイドローラ３３により長手方向に沿って略Ｖ状
に折曲案内するように構成している。Further, the tape guide portion 28 has a holding arm 31 projecting from the supporting cylinder 26 in a bifurcated manner to the left and right, a folding guide surface 32 is formed at the tip of the holding arm 31, and the holding arm 31 is formed. A chevron-shaped guide roller 33 is attached to and the polishing tape T between the folding guide surfaces 32 on the left and right sides is bent and guided in a substantially V shape along the longitudinal direction by the chevron-shaped guide rollers 33 on the left and right sides.
【００１５】この場合、上記テープガイド部２８の上記
支持軸２７に取付板３４を取付け、取付板３４に支持部
材３５を取付け、支持部材３５に突出限を規制して摺動
軸３６を回り止め状態で摺動自在に挿通し、摺動軸３６
をナット体３７及びバネ部材３８により弾圧し、摺動軸
３６の先端部にウエハー材Ｗの端面Ｓに当接可能な位置
決め部材３９を取付け、一方上記支持部材３５の側面に
略Ｃ状の取付盤４０を取付け、取付盤４０に環状凹溝４
０ａを形成し、二個の取付部材４１・４１にＣ環状溝４
０ａに摺動嵌合可能な弧状凸部４１ａを形成し、取付盤
４０の上下位置に取付部材４１をそれぞれ取付ボルト４
２ｂ及び長穴４２ｃにより回動位置調節自在に取付け、
各取付部材４１・４１に押圧軸４２・４２を上記ウエハ
ー材Ｗの表裏両端縁の各々の傾斜縁面Ｍ・Ｍに対面する
方向に進退摺動自在に回り止め部４３により回り止め状
態で挿通して構成されている。In this case, a mounting plate 34 is mounted on the supporting shaft 27 of the tape guide portion 28, a supporting member 35 is mounted on the mounting plate 34, and the protruding limit of the supporting member 35 is restricted to prevent the sliding shaft 36 from rotating. Slidably inserted in the state, sliding shaft 36
The nut body 37 and the spring member 38 are elastically pressed to attach a positioning member 39 capable of contacting the end surface S of the wafer material W to the tip of the sliding shaft 36, while attaching a substantially C-shape to the side surface of the support member 35. The board 40 is attached, and the annular groove 4 is attached to the mounting board 40.
0a is formed, and the C annular groove 4 is formed on the two mounting members 41, 41.
No. 0a is formed with an arcuate convex portion 41a that can be slidably fitted, and the mounting members 41 are attached to the upper and lower positions of the mounting board 40, respectively.
2b and long hole 42c are attached so that the turning position can be adjusted.
The pressing shafts 42, 42 are inserted into the respective mounting members 41, 41 so as to be slidable forward / backward in a direction facing the inclined edge surfaces MM of the front and rear end edges of the wafer material W by a rotation stopping portion 43 in a rotation preventing state. Is configured.
【００１６】４４・４４は押圧部材、４５は首振機構、
４６は弾圧機構であって、この場合上記取付部材４１・
４１の後部にブラケット４７を取付け、ブラケット４１
・４１に調節ボルト４８を螺着し、調節ボルト４８と押
圧軸４２との間にバネ部材４９を介装し、押圧軸４２に
枢軸５０により押圧部材４４を首振動作自在に枢着して
いる。44, 44 are pressing members, 45 is a swing mechanism,
Reference numeral 46 denotes an elastic mechanism, and in this case, the mounting member 41.
The bracket 47 is attached to the rear part of the bracket 41,
. 41 is screwed with an adjusting bolt 48, a spring member 49 is interposed between the adjusting bolt 48 and the pressing shaft 42, and the pressing member 44 is pivotally attached to the pressing shaft 42 by a pivot 50 so as to swing freely. There is.
【００１７】この押圧部材４４・４４は、互いに同一形
状に形成され、二個の凸条部４４ａ及び凹溝部４４ｂが
形成されてなり、互いに突き合わせて略Ｖ状に配置さ
れ、対向する各々の凸条部４４ａと凹溝部４４ｂとが基
部側において咬合可能に形成され、凸条部４４ａの端面
にはウレタンゴム等の弾性材４４ｃが接着され、押圧部
材４４の進退に応じて咬合深さが可変することになる。The pressing members 44, 44 are formed in the same shape as each other, and are formed with two ridge portions 44a and two groove portions 44b. The ridge 44a and the concave groove 44b are formed so as to be occlusable on the base side, and an elastic material 44c such as urethane rubber is adhered to the end surface of the ridge 44a, and the occlusal depth can be changed according to the forward / backward movement of the pressing member 44. Will be done.
【００１８】この実施例は上記構成であるから、図１１
の如く、ウエハー材Ｗの円周状の端縁Ｆ1を研磨加工す
る場合にあっては、回転機構１によりウエハー材Ｗをそ
の軸線Ｗ1廻りに支持回転させ、かつテープ移送機構４
によりテープガイド部２８によってウエハー材Ｗの表裏
両端縁を挟み込む状態の略Ｖ状に案内された研磨テープ
Ｔをウエハー材Ｗの接線方向に連続移送させ、この状態
でテープ移送機構４を移動機構５により前進移動させる
ことにより研磨テープＴをウエハー材Ｗの端縁部分に圧
接し、この圧接によって、ウエハー材Ｗの回転及び研磨
テープＴの移送作用の複合によりウエハー材Ｗの表裏両
端縁を同時に研磨することができ、従って研磨作業能率
を向上することができると共に片面ずつ研磨することに
比して、表裏両端縁を連続した滑らかな面に研磨するこ
とができ、良好な研磨加工を行うことができる。Since this embodiment has the above-mentioned structure, FIG.
Of As, in the case of polishing the edges F 1 circumferential wafer material W is a wafer material W is supported rotating on its axis W 1 around the rotating mechanism 1, and a tape transport mechanism 4
By the tape guide portion 28, the polishing tape T guided in a substantially V-shape in which both front and back edges of the wafer material W are sandwiched is continuously transferred in the tangential direction of the wafer material W, and in this state, the tape transfer mechanism 4 is moved. The polishing tape T is pressed against the edge portion of the wafer material W by moving the wafer tape W forward, and by this pressing, both the front and back edges of the wafer material W are simultaneously polished due to the combination of the rotation of the wafer material W and the transfer action of the polishing tape T. Therefore, the polishing work efficiency can be improved, and both edges of the front and back sides can be polished into a continuous and smooth surface as compared with the case of polishing one surface at a time, and good polishing processing can be performed. it can.
【００１９】この場合、上記テープ移送機構４を揺振機
構６によりウエハー材Ｗの接線方向に揺振運動させるこ
とができ、よってウエハー材Ｗの端縁Ｆ1部分をウエハ
ー材Ｗの回転、研磨テープＴの移送及び研磨テープＴの
揺振の三つの複合作用により研磨でき、それだけ良好な
研磨加工を行うことができる。In this case, the tape transfer mechanism 4 can be oscillated in the tangential direction of the wafer material W by the oscillating mechanism 6, so that the edge F 1 of the wafer material W is rotated and polished. Polishing can be carried out by the three combined actions of the transfer of the tape T and the shaking of the polishing tape T, and the better polishing can be performed.
【００２０】また図１２の如く、ウエハー材Ｗの直線状
の端縁Ｆ2を研磨加工する場合にあっては、ウエハー材
Ｗの回転を停止させ、テープ移送機構４によりテープガ
イド部２８によってウエハー材Ｗの表裏両端縁を挟み込
む状態の略Ｖ状に案内された研磨テープＴをウエハー材
Ｗの接線方向に連続移送させ、かつこの状態でテープ移
送機構４を移動機構５により前進移動させることにより
研磨テープＴをウエハー材Ｗの端縁部分に圧接させると
共に送り機構７によりウエハー材Ｗの接線方向に送り運
動させ、この圧接及び送り運動によって、研磨テープＴ
の移送及び送り作用の複合によりウエハー材Ｗの表裏両
端縁を同時に研磨することができる。Further, as shown in FIG. 12, when polishing the straight edge F 2 of the wafer material W, the rotation of the wafer material W is stopped, and the tape transfer mechanism 4 causes the tape guide portion 28 to move the wafer. By continuously transferring the polishing tape T guided in a substantially V shape in a state of sandwiching both front and back edges of the material W in the tangential direction of the wafer material W, and moving the tape transfer mechanism 4 forward by the moving mechanism 5 in this state. The polishing tape T is pressed against the edge portion of the wafer material W and is moved in the tangential direction of the wafer material W by the feed mechanism 7, and the polishing tape T is moved by this pressing and feeding movement.
The front and back edges of the wafer material W can be simultaneously polished by the combination of the transfer and feeding operations.
【００２１】またこの場合上記テープガイド部２８に上
記ウエハー材Ｗの表裏両端縁の各々の傾斜縁面Ｍ・Ｍに
対面する方向に進退可能な一対の押圧部材４４・４４が
配設され、押圧部材４４・４４は弾圧機構により傾斜縁
面Ｍ側に弾圧され、よって研磨テープＴは傾斜縁面Ｍ・
Ｍに平行に押圧され、かつウエハー材Ｗの端面Ｓに当接
可能な位置決め部材３９が配設されているから、例えば
上記一対の弾圧部材として、一対の単なる平板状部材の
基部をＶ状に枢着してなる構造の場合には各弾性部材を
接近離反動作させるとハ状に開閉するので、この構造に
比べて、上記所定の角度θをもつ各傾斜縁面Ｍ・Ｍのそ
の角度を保持しつつ良好に研磨することができる。Further, in this case, the tape guide portion 28 is provided with a pair of pressing members 44, 44 capable of advancing and retracting in the direction facing the respective inclined edge surfaces M, M of both front and back edges of the wafer material W, and pressing. The members 44, 44 are pressed against the inclined edge surface M by the elastic pressure mechanism, so that the polishing tape T is inclined by the inclined edge surface M.
Since the positioning member 39 that is pressed in parallel with M and is capable of contacting the end surface S of the wafer material W is provided, for example, as the pair of elastic pressure members, the base portions of a pair of flat plate-shaped members are formed into a V shape. In the case of a structure in which the elastic members are pivotally attached, when each elastic member is moved toward and away from each other, it opens and closes in a c-shape. Therefore, as compared with this structure, the angle of each inclined edge surface M · M having the above-mentioned predetermined angle θ is It can be satisfactorily polished while being held.
【００２２】またこの場合、上記押圧部材４４・４４の
首振揺動を可能とする首振機構４５が配設されているか
ら、傾斜縁面Ｍ・Ｍに倣って研磨することができ、それ
だけ良好な研磨加工を行うことができる。Further, in this case, since the oscillating mechanism 45 for oscillating the oscillating swing of the pressing members 44, 44 is provided, it is possible to grind along the inclined edge surfaces MM, and only that. Good polishing can be performed.
【００２３】尚、本発明は上記実施例に限られるもので
はなく、例えば上記実施例では移動機構５、送り機構７
としてシリンダ構造を採用しているが、ボールネジ機構
とサーボモータとの組み合わせ構造を採用することもで
き、また回転機構として吸着パッドを採用しているが、
割出テ−ブル上に複数個のウエハー材Ｗを各々回転自在
に配置してなる回転構造も採用され、その他の構造につ
いても適宜変更して設計されるものである。The present invention is not limited to the above embodiment, and for example, in the above embodiment, the moving mechanism 5 and the feeding mechanism 7 are used.
Although a cylinder structure is adopted as, a combination structure of a ball screw mechanism and a servo motor can be adopted, and a suction pad is used as a rotating mechanism.
A rotating structure in which a plurality of wafer materials W are rotatably arranged on the indexing table is also adopted, and other structures are designed by appropriately changing them.
【００２４】[0024]
【発明の効果】本発明は上述の如く、回転機構によりウ
エハー材をその軸線廻りに支持回転させ、テープ移送機
構によりテープガイド部によってウエハー材の表裏両端
縁を挟み込む状態の略Ｖ状に案内された研磨テープをウ
エハー材の接線方向に連続移送させ、テープ移送機構を
移動機構により移動させることにより研磨テープをウエ
ハー材の端縁部分に圧接してウエハー材の回転及び研磨
テープの移送作用によりウエハー材の表裏両端縁を研磨
することができ、ウエハー材の表裏両端縁を同時に研磨
することができ、従って研磨作業能率を向上することが
できると共に片面ずつ研磨することに比して、表裏両端
縁を連続した滑らかな面に研磨することができて良好な
研磨加工を行うことができる。As described above, according to the present invention, the wafer material is supported and rotated about its axis by the rotating mechanism, and the tape guide mechanism guides the wafer material into a substantially V shape in which both front and rear edges of the wafer material are sandwiched. The polishing tape is continuously transferred in the tangential direction of the wafer material, and the tape transfer mechanism is moved by the moving mechanism to press the polishing tape against the edge portion of the wafer material to rotate the wafer material and transfer the polishing tape to the wafer. Both the front and back edges of the wafer can be polished, the front and back edges of the wafer material can be simultaneously polished, and therefore, the polishing work efficiency can be improved and both the front and back edges can be polished as compared with polishing one by one. Can be polished into a continuous and smooth surface, and good polishing can be performed.
【００２５】この際上記テープ移送機構を揺振機構によ
りウエハー材の接線方向に揺振運動させることによりウ
エハー材の端縁部分をウエハー材の回転、研磨テープの
移送及び研磨テープの揺振の三つの複合作用により研磨
でき、また上記テープ移送機構を送り機構によりウエハ
ー材の接線方向に送り運動させることができ、また上記
テープガイド部に上記ウエハー材の表裏両端縁の各々の
傾斜縁面に対面する方向に進退可能な一対の押圧部材を
配設し、押圧部材を弾圧機構により傾斜縁面側に弾圧
し、よって研磨テープを傾斜縁面に平行に押圧し、ウエ
ハー材の端面に当接可能な位置決め部材を配設すること
により上記所定の角度をもつ各傾斜縁面をその角度を保
持しつつ良好に研磨することができ、さらに上記押圧部
材の首振揺動を可能とする首振機構により傾斜縁面に倣
って研磨することができて良好な研磨加工を行うことが
できる。At this time, the tape transfer mechanism is oscillated in the tangential direction of the wafer material by the oscillating mechanism so that the edge portion of the wafer material is rotated, the polishing tape is transferred, and the polishing tape is oscillated. The tape transfer mechanism can be moved in the tangential direction of the wafer material by the feeding mechanism, and the tape guide portion faces the inclined edge surfaces of both the front and back edges of the wafer material. A pair of pressing members that can move forward and backward are arranged, and the pressing members are elastically pressed to the inclined edge surface side by the elastic pressure mechanism, so that the polishing tape is pressed in parallel to the inclined edge surface and can contact the end surface of the wafer material. By disposing such a positioning member, it is possible to satisfactorily polish each inclined edge surface having the above-mentioned predetermined angle while maintaining that angle, and further it is possible to swing the pressing member. Able to polish following the inclined edge surface by neck oscillating mechanism can perform a good polishing to.
【００２６】以上、所期の目的を充分達成することがで
きる。As described above, the intended purpose can be sufficiently achieved.
【図１】本発明の実施例の全体平面図である。FIG. 1 is an overall plan view of an embodiment of the present invention.
【図２】本発明の実施例の部分側断面図である。FIG. 2 is a partial side sectional view of an embodiment of the present invention.
【図３】本発明の実施例の部分側面図である。FIG. 3 is a partial side view of the embodiment of the present invention.
【図４】本発明の実施例の部分側断面図である。FIG. 4 is a partial side sectional view of an embodiment of the present invention.
【図５】本発明の実施例の部分平断面図である。FIG. 5 is a partial plan sectional view of an embodiment of the present invention.
【図６】本発明の実施例の部分前断面図である。FIG. 6 is a partial front sectional view of the embodiment of the present invention.
【図７】本発明の実施例の拡大部分側断面図である。FIG. 7 is an enlarged partial side sectional view of the embodiment of the present invention.
【図８】本発明の実施例の拡大部分側断面図である。FIG. 8 is an enlarged partial side sectional view of the embodiment of the present invention.
【図９】本発明の実施例の拡大部分正面図である。FIG. 9 is an enlarged partial front view of the embodiment of the present invention.
【図１０】本発明の実施例の部分拡大側面図である。FIG. 10 is a partially enlarged side view of the embodiment of the present invention.
【図１１】本発明の実施例の使用状態の説明斜視図であ
る。FIG. 11 is an explanatory perspective view of a usage state of the embodiment of the present invention.
【図１２】本発明の実施例の他の使用状態の説明斜視図
である。FIG. 12 is an explanatory perspective view of another usage state of the embodiment of the present invention.
【図１３】本発明の実施例のウエハー材の斜視図であ
る。FIG. 13 is a perspective view of a wafer material according to an embodiment of the present invention.
【図１４】本発明の実施例のウエハー材の部分断面図で
ある。FIG. 14 is a partial cross-sectional view of a wafer material according to an embodiment of the present invention.
Ｗ ウエハー材 Ｔ 研磨テープ Ｆ 端縁 １ 回転機構 ４ テープ移送機構 ５ 移動機構 ６ 揺振機構 ７ 送り機構 ２８ テープガイド部 ３９ 位置決め部材 ４４ 押圧部材 ４５ 首振機構 ４５ 弾圧機構 W Wafer material T Polishing tape F Edge 1 Rotation mechanism 4 Tape transfer mechanism 5 Moving mechanism 6 Shaking mechanism 7 Feeding mechanism 28 Tape guide section 39 Positioning member 44 Pressing member 45 Swing mechanism 45 Suppression mechanism
Claims (5)
せる回転機構と、研磨テープをウエハー材の接線方向に
連続移送させるテープ移送機構と、該テープ移送機構を
進退移動させる移動機構と、該研磨テープをウエハー材
の表裏両端縁を挟み込む状態の略Ｖ状に案内可能なテー
プガイド部とを具備したことを特徴とするウエハー材縁
端部研磨装置。1. A rotating mechanism for supporting and rotating a wafer material around its axis, a tape transport mechanism for continuously transporting a polishing tape in a tangential direction of the wafer material, a moving mechanism for moving the tape transport mechanism forward and backward, and the polishing. A wafer material edge polishing apparatus, comprising: a tape guide portion capable of guiding the tape in a substantially V shape in a state of sandwiching both front and back edges of the wafer material.
方向に揺振運動させる揺振機構を設けてなる請求項１記
載のウエハー材縁端部研磨装置。2. The wafer material edge polishing apparatus according to claim 1, further comprising a oscillating mechanism for oscillating the tape transfer mechanism in a tangential direction of the wafer material.
方向に送り運動させる送り機構を設けてなる請求項１又
は２記載のウエハー材縁端部研磨装置。3. The wafer material edge polishing apparatus according to claim 1, further comprising a feed mechanism for feeding the tape transport mechanism in a tangential direction of the wafer material.
表裏両端縁の各々の傾斜縁面に対面する方向に進退可能
な一対の押圧部材を配設し、該押圧部材を該傾斜縁面側
に弾圧可能な弾圧機構を配設し、該ウエハー材の端面に
当接可能な位置決め部材を配設してなる請求項１乃至３
記載のウエハー材縁端部研磨装置。4. A pair of pressing members, which can move forward and backward in the direction facing the respective inclined edge surfaces of both front and rear edges of the wafer material, are arranged in the tape guide portion, and the pressing members are provided on the inclined edge surface side. 4. An elastic pressure mechanism capable of elastic pressure is disposed, and a positioning member capable of contacting the end surface of the wafer material is disposed.
The wafer material edge polishing apparatus described.
振機構を配設してなる請求項４記載のウエハー材縁端部
研磨装置。5. A wafer material edge polishing apparatus according to claim 4, further comprising a swing mechanism for swinging the pressing member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16735394A JPH081494A (en) | 1994-06-27 | 1994-06-27 | Wafer material edge end part polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16735394A JPH081494A (en) | 1994-06-27 | 1994-06-27 | Wafer material edge end part polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH081494A true JPH081494A (en) | 1996-01-09 |
Family
ID=15848155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16735394A Pending JPH081494A (en) | 1994-06-27 | 1994-06-27 | Wafer material edge end part polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081494A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6933234B2 (en) | 2001-11-26 | 2005-08-23 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and polishing apparatus |
| US7014529B1 (en) | 2004-10-15 | 2006-03-21 | Kabushiki Kaisha Toshiba | Substrate processing method and substrate processing apparatus |
| WO2006041196A1 (en) * | 2004-10-15 | 2006-04-20 | Kabushiki Kaisha Toshiba | Polishing apparatus and polishing method |
| JP2007118187A (en) * | 2007-02-15 | 2007-05-17 | Ebara Corp | Polishing device |
| JP2009518872A (en) * | 2005-12-09 | 2009-05-07 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for processing a substrate |
| US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
| JP2010173036A (en) * | 2009-01-30 | 2010-08-12 | Daihatsu Motor Co Ltd | Method of manufacturing crankshaft |
| US7993485B2 (en) * | 2005-12-09 | 2011-08-09 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US8142260B2 (en) * | 2007-05-21 | 2012-03-27 | Applied Materials, Inc. | Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads |
| US8979615B2 (en) | 2011-03-25 | 2015-03-17 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2015174165A (en) * | 2014-03-14 | 2015-10-05 | 株式会社荏原製作所 | Polishing device and polishing method |
| US9457448B2 (en) | 2011-03-28 | 2016-10-04 | Ebara Corporation | Polishing apparatus and polishing method |
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-
1994
- 1994-06-27 JP JP16735394A patent/JPH081494A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6933234B2 (en) | 2001-11-26 | 2005-08-23 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and polishing apparatus |
| US7351131B2 (en) | 2001-11-26 | 2008-04-01 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and polishing apparatus |
| US7014529B1 (en) | 2004-10-15 | 2006-03-21 | Kabushiki Kaisha Toshiba | Substrate processing method and substrate processing apparatus |
| WO2006041196A1 (en) * | 2004-10-15 | 2006-04-20 | Kabushiki Kaisha Toshiba | Polishing apparatus and polishing method |
| CN100452312C (en) * | 2004-10-15 | 2009-01-14 | 株式会社东芝 | Polishing apparatus and polishing method |
| US7744445B2 (en) | 2004-10-15 | 2010-06-29 | Kabushiki Kaisha Toshiba | Polishing apparatus and polishing method |
| KR101236855B1 (en) * | 2005-12-09 | 2013-02-26 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for processing a substrate |
| JP2009518872A (en) * | 2005-12-09 | 2009-05-07 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for processing a substrate |
| US7993485B2 (en) * | 2005-12-09 | 2011-08-09 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
| JP4660494B2 (en) * | 2007-02-15 | 2011-03-30 | 株式会社荏原製作所 | Polishing cartridge |
| JP2007118187A (en) * | 2007-02-15 | 2007-05-17 | Ebara Corp | Polishing device |
| US8142260B2 (en) * | 2007-05-21 | 2012-03-27 | Applied Materials, Inc. | Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads |
| JP2010173036A (en) * | 2009-01-30 | 2010-08-12 | Daihatsu Motor Co Ltd | Method of manufacturing crankshaft |
| US8979615B2 (en) | 2011-03-25 | 2015-03-17 | Ebara Corporation | Polishing apparatus and polishing method |
| US10493588B2 (en) | 2011-03-25 | 2019-12-03 | Ebara Corporation | Polishing apparatus and polishing method |
| US9457448B2 (en) | 2011-03-28 | 2016-10-04 | Ebara Corporation | Polishing apparatus and polishing method |
| US9457447B2 (en) | 2011-03-28 | 2016-10-04 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2015174165A (en) * | 2014-03-14 | 2015-10-05 | 株式会社荏原製作所 | Polishing device and polishing method |
| US9914196B2 (en) | 2014-03-14 | 2018-03-13 | Ebara Corporation | Polishing apparatus and polishing method |
| US10155294B2 (en) | 2014-03-14 | 2018-12-18 | Ebara Corporation | Polishing apparatus and polishing method |
| DE102021104526A1 (en) | 2021-02-25 | 2022-08-25 | APEX Automatisierungs- & Präzisionstechnik GmbH | Tool with a sanding belt holder |
| DE102021104526B4 (en) | 2021-02-25 | 2022-09-08 | APEX Automatisierungs- & Präzisionstechnik GmbH | Tool with a sanding belt holder |
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