JPH08144083A - Plating post treatment of electronic parts - Google Patents
Plating post treatment of electronic partsInfo
- Publication number
- JPH08144083A JPH08144083A JP6308142A JP30814294A JPH08144083A JP H08144083 A JPH08144083 A JP H08144083A JP 6308142 A JP6308142 A JP 6308142A JP 30814294 A JP30814294 A JP 30814294A JP H08144083 A JPH08144083 A JP H08144083A
- Authority
- JP
- Japan
- Prior art keywords
- antistatic agent
- plating
- post
- electronic component
- electronic parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はチップコンデンサ、チ
ップインダクタ、チップ抵抗器、チップ形サーミスタ等
の電子部品（チップ部品）の外部電極の表面を処理する
電子部品のメッキ後処理方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a post-plating method for an electronic component for treating the surface of an external electrode of an electronic component (chip component) such as a chip capacitor, a chip inductor, a chip resistor, and a chip type thermistor. .
【０００２】[0002]
【従来の技術】一般に、チップ部品の外部電極は、Ａ
ｕ，Ａｇ，Ｃｕ，Ｎｉ，Ｚｎ等からなる単層あるいは複
数層の下地層と、これらの下地層の上に形成されたＳｎ
又はＳｎ／Ｐｂ（半田）層とから形成されている。ここ
で、Ｓｎ又はＳｎ／Ｐｂ（半田）層は実装の際の半田濡
れ性を向上させるためのものであり、メッキにより析出
形成されている。2. Description of the Related Art Generally, an external electrode of a chip component is A
Single-layer or multiple-layer underlayers made of u, Ag, Cu, Ni, Zn, etc., and Sn formed on these underlayers
Alternatively, it is formed of a Sn / Pb (solder) layer. Here, the Sn or Sn / Pb (solder) layer is for improving solder wettability at the time of mounting, and is formed by plating.
【０００３】[0003]
【発明が解決しようとする課題】ところで、Ｓｎ又はＳ
ｎ／Ｐｂメッキは析出粒子が大きくて、粗いので、析出
粒子同士の密着性や下地（Ａｕ，Ａｇ，Ｃｕ，Ｎｉ，Ｚ
ｎ等のメッキ層）との密着性が悪く、チップ部品を取り
扱っている際に、この密着性の悪いＳｎ又はＳｎ／Ｐｂ
が剥落し、他の電子部品やマウント機を汚すという問題
があった。By the way, Sn or S
Since n / Pb plating has large and coarse precipitate particles, the adhesion between the precipitate particles and the base (Au, Ag, Cu, Ni, Z)
Sn or Sn / Pb, which has poor adhesion when handling chip parts, because of poor adhesion to plating layers such as n).
There was a problem that it peeled off and polluted other electronic parts and mounting machines.
【０００４】また、Ｓｎ又はＳｎ／Ｐｂメッキの析出粒
子は大きくて、粗いので、ゴミ・異物を吸着させ易く、
メッキ膜中にゴミ・異物が吸着すると半田濡れ性が悪化
するとともに、帯電量が高い方に変化し、また、測定ピ
ンにメッキ膜が付着し、これが酸化すると、ピンに付着
して酸化したものの抵抗値＋製品の抵抗値が測定値とな
り、電気特性測定時に測定誤差を増加させるという問題
があった。Further, since the deposited particles of Sn or Sn / Pb plating are large and coarse, it is easy to adsorb dust and foreign matter,
When dust or foreign matter is adsorbed in the plating film, the solder wettability deteriorates, the charge amount changes to the higher side, and when the plating film adheres to the measurement pin and it oxidizes, it adheres to the pin and is oxidized. The resistance value + the resistance value of the product becomes the measured value, which causes a problem of increasing the measurement error when measuring the electrical characteristics.
【０００５】また、チップ部品は小さくて軽いので、マ
ウント機内において摩擦により静電気を帯びた場合、相
互に集合したり、マウント機に貼り付いたりして、マウ
ント機内に詰まりを生じさせることがあるという問題が
あった。Further, since the chip parts are small and light, when they are charged with static electricity in the mount machine, they may aggregate with each other or stick to the mount machine, resulting in clogging in the mount machine. There was a problem.
【０００６】この発明は上記問題を解決するためになさ
れたもので、外部電極の最外層に形成されたメッキ層の
密着性を良くし、更に静電気が帯びないようにした電子
部品のメッキ後処理方法を提供することを目的とする。The present invention has been made in order to solve the above-mentioned problems, and improves the adhesion of the plating layer formed on the outermost layer of the external electrode, and further, the post-plating treatment of the electronic component for preventing static electricity from being applied. The purpose is to provide a method.
【０００７】[0007]
【課題を解決するための手段】請求項１記載の電子部品
のメッキ後処理方法は、外部電極の最外層に半田濡れ性
の良い金属又は合金をメッキした電子部品をバレル研磨
することにより上記課題を解決した。According to a first aspect of the present invention, there is provided a method for post-plating an electronic component, wherein the outermost layer of the external electrode is barrel-polished with a metal or alloy having good solder wettability. Solved.
【０００８】ここで、メッキ後処理したメッキ層の表面
荒さＲa は、Ｒa ≦０．６μｍ、特にＲa ≦０．５μｍ
が好ましい。外部電極の最外層の金属又は合金として
は、例えばＳｎ又はＳｎ／Ｐｂを挙げることができる。
バレル研磨は乾式でも湿式でも良い。Here, the surface roughness R a of the plated layer after the plating is Ra ≦ 0.6 μm, especially R a ≦ 0.5 μm.
Is preferred. Examples of the metal or alloy of the outermost layer of the external electrode include Sn or Sn / Pb.
The barrel polishing may be dry or wet.
【０００９】請求項６記載の電子部品のメッキ後処理方
法は、バレル研磨した電子部品に帯電防止剤を被覆する
ことにより上記課題を解決した。ここで、帯電防止剤の
厚さは０．０１〜１．０μｍ、特に０．０３〜０．５μ
ｍが好ましい。帯電防止剤としてはシロキサン系の帯電
防止剤又は界面活性剤系の帯電防止剤を挙げることがで
きる。In the post-plating method for electronic parts according to the sixth aspect, the above problems are solved by coating the barrel-polished electronic parts with an antistatic agent. Here, the thickness of the antistatic agent is 0.01 to 1.0 μm, particularly 0.03 to 0.5 μm.
m is preferred. Examples of the antistatic agent include a siloxane-based antistatic agent and a surfactant-based antistatic agent.
【００１０】なお、前記電子部品としてはチップコンデ
ンサ、チップインダクタ、チップ抵抗器又はチップ形サ
ーミスタ等のチップ部品を挙げることができるが、これ
ら以外のチップ部品にもこの発明を適用できることはも
ちろんである。The electronic parts may be chip parts such as a chip capacitor, a chip inductor, a chip resistor or a chip type thermistor, but it goes without saying that the present invention can be applied to other chip parts. .
【００１１】[0011]
【作用】請求項１〜３記載の電子部品のメッキ後処理方
法によれば、バレル研磨により、電子部品の外部電極の
表面に弱く結合していた粒子は除去され、その他の粒子
は押し潰されて一体化する。According to the post-plating method for electronic parts of claims 1 to 3, the particles weakly bonded to the surface of the external electrode of the electronic part are removed and the other particles are crushed by barrel polishing. And integrate.
【００１２】また、請求項４〜６記載の電子部品のメッ
キ後処理方法によれば、電子部品に帯電防止剤を被覆し
たので、外部電極の表面に吸湿性とイオン性が付加さ
れ、電子部品に帯電した電気は直ちに放電する。Further, according to the post-plating method for electronic parts of claims 4 to 6, since the electronic parts are coated with the antistatic agent, hygroscopicity and ionicity are added to the surfaces of the external electrodes, and the electronic parts are added. The electricity charged to the battery is immediately discharged.
【００１３】[0013]
実験例１ 積層チップコンデンサ（商品番号２１２Ｆ１０４Ｚ：寸
法２．０×１．２５×１．２５）を直径１φのアルミナ
ビーズとともにバレル研磨装置内に入れ、３０ｒｐｍの
回転数で撹拌研磨した。Experimental Example 1 A multilayer chip capacitor (product number 212F104Z: size 2.0 × 1.25 × 1.25) was put in a barrel polishing machine together with alumina beads having a diameter of 1φ, and stirred and polished at a rotation speed of 30 rpm.
【００１４】ここで、バレル研磨装置内の積層チップコ
ンデンサの容積率は４０％、アルミナビーズの容積率は
２０％、残りの空間の容積率は４０％とした。また、研
磨時間は１２〜２４時間とした。更に、積層チップコン
デンサとしては、外部電極の最外層にＳｎ／Ｐｂ電解メ
ッキを施したものを使用した。Here, the volume ratio of the laminated chip capacitor in the barrel polishing apparatus was 40%, the volume ratio of alumina beads was 20%, and the volume ratio of the remaining space was 40%. The polishing time was 12 to 24 hours. Further, as the multilayer chip capacitor, one having Sn / Pb electrolytic plating applied to the outermost layer of the external electrodes was used.
【００１５】次に、研磨後の積層チップコンデンサを各
研磨時間ごとに評価（他の部品に対する汚染等の評価）
したところ、表１に示す通りとなった。Next, the laminated chip capacitor after polishing is evaluated at each polishing time (evaluation of contamination of other parts).
As a result, the results are shown in Table 1.
【００１６】更に、研磨後の積層チップコンデンサの外
部電極の表面荒さＲa を各研磨時間ごとに測定したとこ
ろ、表１に示す通りとなった。ここで、表面荒さの指標
ＲaはＪＩＳ Ｂ ０６０１に定義するものを使用し
た。[0016] Furthermore, to measure the surface roughness R a of the external electrodes of the multilayer chip capacitor after polishing each polishing time was as shown in Table 1. Here, the index R a of the surface roughness was used which defines the JIS B 0601.
【００１７】[0017]
【表１】 [Table 1]
【００１８】表１に示された結果から、外部電極の表面
荒さＲa は、０．９μｍ以上では他の部品に対する汚染
等の評価が悪く、０．６μｍ以下では他の部品に対する
汚染等の評価が許容でき、０．５μｍ以下では他の部品
に対する汚染等の評価が良好になることがわかる。From the results shown in Table 1, when the surface roughness R a of the external electrode is 0.9 μm or more, the evaluation of contamination on other parts is poor, and when it is 0.6 μm or less, the evaluation of contamination on other parts is performed. Is acceptable, and it can be seen that when the thickness is 0.5 μm or less, the evaluation of contamination on other parts is good.
【００１９】実験例２ バレル研磨装置内に水を入れ、積層チップコンデンサの
容積率を２０％、アルミナビーズの容積率を１０％、水
の容積率を７０％とした他は実験例１と同様の条件で実
験をしたところ、実験例１とほゞ同様の結果が得られ
た。Experimental Example 2 The same as Experimental Example 1 except that water was put into the barrel polishing apparatus so that the volume ratio of the laminated chip capacitor was 20%, the volume ratio of alumina beads was 10%, and the water volume ratio was 70%. When an experiment was conducted under the conditions of, the results were almost the same as those of Experimental Example 1.
【００２０】実験例１，２の結果から、外部電極の表面
荒さＲa はＲa ≦０．６μｍが良く、特にＲa ≦０．５
μｍが好ましいことがわかる。From the results of Experimental Examples 1 and 2, it is preferable that the surface roughness R a of the external electrode is R a ≦ 0.6 μm, and especially R a ≦ 0.5.
It can be seen that μm is preferable.
【００２１】図１は外部電極表面のバレル研磨前後の状
態と外部電極表面に帯電防止剤を被覆した状態を示す説
明図である。実験例１，２において、外部電極表面のバ
レル研磨前後の状態と外部電極表面に帯電防止剤を被覆
した状態は同図に示すようになると考えられる。なお、
同図において、１０は電子部品の外部電極、１２は外部
電極１０の表面にメッキされたＳｎ／Ｐｂの粒子、１４
は潰されたＳｎ／Ｐｂの粒子の表面に被覆された帯電防
止剤である。FIG. 1 is an explanatory view showing a state before and after barrel polishing of the external electrode surface and a state in which the external electrode surface is coated with an antistatic agent. In Experimental Examples 1 and 2, it is considered that the external electrode surface before and after barrel polishing and the external electrode surface coated with the antistatic agent are as shown in the same figure. In addition,
In the figure, 10 is an external electrode of an electronic component, 12 is a particle of Sn / Pb plated on the surface of the external electrode 10, and 14
Is an antistatic agent coated on the surface of crushed Sn / Pb particles.
【００２２】実験例３ 次に、界面活性剤系の帯電防止剤を水で５００〜１００
０倍に希釈した水溶液を準備し、この水溶液中に積層チ
ップコンデンサを１分間浸漬し、取り出して乾燥させ
た。ここで、帯電防止剤は非イオン性多価アルコール脂
肪酸エステルを使用した。また、積層チップコンデンサ
は実験例１で外部電極の表面を２４時間バレル研磨した
ものを使用した。Experimental Example 3 Next, a surfactant-based antistatic agent was added to water in an amount of 500 to 100.
An aqueous solution diluted to 0 times was prepared, and the multilayer chip capacitor was immersed in this aqueous solution for 1 minute, taken out, and dried. Here, as the antistatic agent, a nonionic polyhydric alcohol fatty acid ester was used. The multilayer chip capacitor used in Experimental Example 1 had the surface of the external electrode barrel-polished for 24 hours.
【００２３】次に、この積層チップコンデンサ２０個を
ポリプロピレン製ビーカーに入れ、２０回振動させて、
積層チップコンデンサを相互に摩擦させた。なお、この
時の実験環境は２７℃で４５％ＲＨであった。Next, 20 of these multilayer chip capacitors were placed in a polypropylene beaker and vibrated 20 times,
The multilayer chip capacitors were rubbed against each other. The experimental environment at this time was 45% RH at 27 ° C.
【００２４】次に、この積層チップコンデンサの帯電状
態を帯電防止剤の厚さごとに評価したところ、表２に示
す通りとなった。Next, the charge state of this multilayer chip capacitor was evaluated for each thickness of the antistatic agent, and the results are shown in Table 2.
【００２５】[0025]
【表２】 [Table 2]
【００２６】表２に示された結果から、帯電防止剤の厚
さは、０．０１μｍ未満では、帯電による不都合を生
じ、０．０１〜１．０μｍ、特に０．０３〜０．５μｍ
では帯電による不都合がないことが分かる。From the results shown in Table 2, if the thickness of the antistatic agent is less than 0.01 μm, inconvenience due to electrification occurs, and 0.01 to 1.0 μm, particularly 0.03 to 0.5 μm.
Then, it can be seen that there is no inconvenience due to charging.
【００２７】なお、実験例３の帯電防止剤の厚さが０．
５μｍのものについて、帯電防止剤を被覆させる前と後
で帯電量を測定したところ、表３に示す通りとなった。The thickness of the antistatic agent of Experimental Example 3 was 0.
When the amount of charge of 5 μm was measured before and after coating with the antistatic agent, it was as shown in Table 3.
【００２８】[0028]
【表３】[Table 3]
【００２９】実験例４ 帯電防止剤としてシロキサン系のものを用いた他は実験
例３と同様の条件で実験をしたところ、実験例３とほゞ
同様の結果が得られた。Experimental Example 4 When an experiment was performed under the same conditions as in Experimental Example 3 except that a siloxane-based one was used as the antistatic agent, almost the same results as in Experimental Example 3 were obtained.
【００３０】実験例３，４の結果から、帯電防止剤の厚
さは、０．０１〜１．０μｍが良く、特に０．０３〜
０．５μｍが好ましいことがわかる。From the results of Experimental Examples 3 and 4, the thickness of the antistatic agent is preferably 0.01 to 1.0 μm, particularly 0.03 to
It can be seen that 0.5 μm is preferable.
【００３１】[0031]
【発明の効果】請求項１〜６記載の発明によれば、電子
部品の外部電極の表面に弱く結合していた金属粒子は除
去され、その他の金属粒子は押し潰されて一体化するの
で、電子部品の外部電極の表面の金属粒子脱落による他
電子部品への汚染を防止することができるという効果が
ある。According to the present invention, the metal particles weakly bonded to the surface of the external electrode of the electronic component are removed, and the other metal particles are crushed and integrated. There is an effect that it is possible to prevent other electronic parts from being contaminated due to metal particles falling off the surface of the external electrodes of the electronic parts.
【００３２】また、請求項１〜６記載の発明によれば、
電子部品の外部電極の表面に弱く結合していた金属粒子
は除去され、その他の金属粒子は押し潰されて一体化す
るので、外部電極の表面にゴミ・異物を吸着させること
がなくなり、測定ピンにメッキ膜が付着しなくなり、電
気特性測定時における測定誤差を防止することができる
という効果がある。According to the invention described in claims 1 to 6,
The metal particles that were weakly bonded to the surface of the external electrode of the electronic component are removed, and the other metal particles are crushed and integrated, so that no dust or foreign matter is adsorbed on the surface of the external electrode. There is an effect that the plating film does not adhere to the surface and the measurement error at the time of measuring the electric characteristics can be prevented.
【００３３】また、請求項４〜６記載の発明によれば、
電子部品に帯電した電気は直ちに放電するので、電子部
品同士の集合、電子部品のマウント機への貼り付は生じ
なくなり、マウント機内における電子部品の詰まり等に
よる不具合が低減するという効果がある。According to the invention described in claims 4 to 6,
The electricity charged in the electronic components is immediately discharged, so that the electronic components are not aggregated and the electronic components are not attached to the mount machine, which has the effect of reducing defects such as clogging of the electronic components in the mount machine.
【図１】図１は外部電極表面のバレル研磨の状態と外部
電極表面に帯電防止剤を被覆した状態を示す説明図であ
る。FIG. 1 is an explanatory view showing a state of barrel polishing of the external electrode surface and a state of coating the external electrode surface with an antistatic agent.
１０ 外部電極 １２ Ｓｎ／Ｐｂの粒子 １４ 帯電防止剤 10 External Electrode 12 Sn / Pb Particles 14 Antistatic Agent
Claims (10)
の外部電極の表面の半田濡れ性の良い金属又は合金の粒
子からなるメッキ層を潰して平滑にすることを特徴とす
る電子部品のメッキ後処理方法。1. An electronic component, characterized in that the electronic component is barrel-polished to crush and smooth a plating layer made of particles of a metal or alloy having good solder wettability on the surface of an external electrode of the electronic component. Post-treatment method for plating.
０．６μｍであることを特徴とする請求項１記載の電子
部品のメッキ後処理方法。2. The surface roughness R a of the plating layer is R a ≦
The post-plating method for an electronic component according to claim 1, wherein the post-plating method is 0.6 μm.
０．５μｍであることを特徴とする請求項１記載の電子
部品のメッキ後処理方法。3. The surface roughness R a of the plating layer is R a ≦
The post-plating method of an electronic component according to claim 1, wherein the post-plating treatment method is 0.5 μm.
からなることを特徴とする請求項１〜３記載の電子部品
のメッキ後処理方法。4. The metal or alloy is Sn or Sn / Pb.
The post-plating method for an electronic component according to claim 1, wherein
とを特徴とする請求項１〜４記載の電子部品のメッキ後
処理方法。5. The post-plating method of an electronic component according to claim 1, wherein the barrel polishing is dry or wet.
剤を被覆したことを特徴とする請求項１〜５記載の電子
部品のメッキ後処理方法。6. The post-plating method of an electronic component according to claim 1, wherein the barrel-polished electronic component is coated with an antistatic agent.
０μｍであることを特徴とする請求項６記載の電子部品
のメッキ後処理方法。7. The thickness of the antistatic agent is 0.01 to 1.
7. The post-plating method for electronic parts according to claim 6, wherein the post-plating method is 0 μm.
５μｍであることを特徴とする請求項６記載の電子部品
のメッキ後処理方法。8. The thickness of the antistatic agent is 0.03 to 0.
The post-plating method for an electronic component according to claim 6, which has a thickness of 5 μm.
止剤又は界面活性剤系の帯電防止剤であることを特徴と
する請求項６〜８記載の電子部品のメッキ後処理方法。9. The post-plating treatment method for an electronic component according to claim 6, wherein the antistatic agent is a siloxane-based antistatic agent or a surfactant-based antistatic agent.
を特徴とする請求項１〜９記載の電子部品のメッキ後処
理方法。10. The post-plating method of an electronic component according to claim 1, wherein the electronic component is a chip component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6308142A JPH08144083A (en) | 1994-11-17 | 1994-11-17 | Plating post treatment of electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6308142A JPH08144083A (en) | 1994-11-17 | 1994-11-17 | Plating post treatment of electronic parts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08144083A true JPH08144083A (en) | 1996-06-04 |
Family
ID=17977402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6308142A Pending JPH08144083A (en) | 1994-11-17 | 1994-11-17 | Plating post treatment of electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08144083A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0845327A2 (en) * | 1996-11-27 | 1998-06-03 | Shuji Kawasaki | Buffing apparatus and method |
| JP2001332436A (en) * | 2000-05-18 | 2001-11-30 | Ibiden Co Ltd | Capacitor and multilayered printed wiring board |
| JP2001332437A (en) * | 2000-05-19 | 2001-11-30 | Ibiden Co Ltd | Capacitor and multilayered printed wiring board |
| EP1313214A2 (en) * | 2001-11-16 | 2003-05-21 | TDK Corporation | Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device |
| JP2007077475A (en) * | 2005-09-15 | 2007-03-29 | Tohoku Univ | Surface treatment method for metal glass component, and metal glass component surface-treated by the method |
| WO2008155967A1 (en) * | 2007-06-15 | 2008-12-24 | Murata Manufacturing Co., Ltd. | Board with built-in component and its manufacturing method |
| JP2010090400A (en) * | 2008-10-03 | 2010-04-22 | Dowa Metaltech Kk | Electroconductive material and method for manufacturing the same |
| JP4496635B2 (en) * | 2000-10-30 | 2010-07-07 | 株式会社村田製作所 | Manufacturing method of electronic parts |
| JP2013027549A (en) * | 2011-07-28 | 2013-02-07 | Jx Nippon Mining & Metals Corp | Method for manufacturing lead button |
| US9175406B2 (en) | 2007-03-13 | 2015-11-03 | Tokoku University | Method of surface treatment for metal glass part, and metal glass part with its surface treated by the method |
-
1994
- 1994-11-17 JP JP6308142A patent/JPH08144083A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0845327A2 (en) * | 1996-11-27 | 1998-06-03 | Shuji Kawasaki | Buffing apparatus and method |
| EP0845327A3 (en) * | 1996-11-27 | 1998-09-30 | Shuji Kawasaki | Buffing apparatus and method |
| TR199701398A3 (en) * | 1996-11-27 | 1999-10-21 | Shuji Kawasaki | Wet type polishing method, accumulation coating method, soot polishing method, soot polishing equipment, soot surface treatment method, plug polishing equipment work support unit and polishing environment |
| JP2001332436A (en) * | 2000-05-18 | 2001-11-30 | Ibiden Co Ltd | Capacitor and multilayered printed wiring board |
| JP4641588B2 (en) * | 2000-05-18 | 2011-03-02 | イビデン株式会社 | Capacitor and multilayer printed wiring board |
| JP4641589B2 (en) * | 2000-05-19 | 2011-03-02 | イビデン株式会社 | Capacitor and multilayer printed wiring board |
| JP2001332437A (en) * | 2000-05-19 | 2001-11-30 | Ibiden Co Ltd | Capacitor and multilayered printed wiring board |
| JP4496635B2 (en) * | 2000-10-30 | 2010-07-07 | 株式会社村田製作所 | Manufacturing method of electronic parts |
| EP1313214A3 (en) * | 2001-11-16 | 2010-05-19 | TDK Corporation | Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device |
| EP1313214A2 (en) * | 2001-11-16 | 2003-05-21 | TDK Corporation | Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device |
| JP2007077475A (en) * | 2005-09-15 | 2007-03-29 | Tohoku Univ | Surface treatment method for metal glass component, and metal glass component surface-treated by the method |
| JP4693045B2 (en) * | 2005-09-15 | 2011-06-01 | 国立大学法人東北大学 | Surface treatment method for metal glass parts and metal glass parts surface-treated by the method |
| US9175406B2 (en) | 2007-03-13 | 2015-11-03 | Tokoku University | Method of surface treatment for metal glass part, and metal glass part with its surface treated by the method |
| WO2008155967A1 (en) * | 2007-06-15 | 2008-12-24 | Murata Manufacturing Co., Ltd. | Board with built-in component and its manufacturing method |
| JPWO2008155967A1 (en) * | 2007-06-15 | 2010-08-26 | 株式会社村田製作所 | Component built-in substrate and manufacturing method thereof |
| JP5007746B2 (en) * | 2007-06-15 | 2012-08-22 | 株式会社村田製作所 | Component built-in board |
| JP2010090400A (en) * | 2008-10-03 | 2010-04-22 | Dowa Metaltech Kk | Electroconductive material and method for manufacturing the same |
| JP2013027549A (en) * | 2011-07-28 | 2013-02-07 | Jx Nippon Mining & Metals Corp | Method for manufacturing lead button |
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