JPH08139085A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH08139085A JPH08139085A JP29564694A JP29564694A JPH08139085A JP H08139085 A JPH08139085 A JP H08139085A JP 29564694 A JP29564694 A JP 29564694A JP 29564694 A JP29564694 A JP 29564694A JP H08139085 A JPH08139085 A JP H08139085A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- gas
- exhaust
- valves
- thermal oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置に関
し、特に、装置内にガスを導入して半導体基板の処理を
行う半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus for introducing a gas into the apparatus to process a semiconductor substrate.
【０００２】[0002]
【従来の技術】従来の半導体製造装置の配管系統を図１
に示す。図１において、熱酸化炉１ａ、１ｂやエッチン
グ装置などの反応ガスを用いて処理を行う半導体製造装
置８ａ〜８ｃの各ガス排出配管３ａ、３ｂ、１１ａ〜１
１ｃは、クリーンルーム内の共通な排出ガス本管６に接
続され、この排出ガス本管６は、排出ガスを除去処理す
る排出ガス除害処理装置７に接続されていた。例えば、
熱酸化膜の形成を行う熱酸化炉１ａ、１ｂで使用された
酸化性媒体は、熱酸化炉１ａ、１ｂのウエハ処理部を通
過した後、排出ガス処理系の配管を通じて下流側の排出
ガス除害処理装置７に送られる。この従来の熱酸化炉
は、例えば、特開平５−１０２１３１号公報に記載され
ている。2. Description of the Related Art A conventional piping system for semiconductor manufacturing equipment is shown in FIG.
Shown in In FIG. 1, gas exhaust pipes 3a, 3b, 11a to 1 of semiconductor manufacturing apparatuses 8a to 8c that perform processing using a reaction gas such as thermal oxidation furnaces 1a and 1b and an etching apparatus.
1c was connected to a common exhaust gas main pipe 6 in the clean room, and this exhaust gas main pipe 6 was connected to an exhaust gas detoxification treatment device 7 for removing exhaust gas. For example,
The oxidizing medium used in the thermal oxidation furnaces 1a and 1b for forming the thermal oxide film passes through the wafer processing section of the thermal oxidation furnaces 1a and 1b, and is then discharged through the exhaust gas processing system piping to remove exhaust gas on the downstream side. It is sent to the damage processing device 7. This conventional thermal oxidation furnace is described in, for example, Japanese Patent Laid-Open No. 5-102131.
【０００３】そして、熱酸化工程においては、熱酸化炉
１ａ、１ｂ内を貫流する酸化性媒体の炉内における滞留
時間を一定に保持することが、熱酸化膜の品質ばらつき
を抑えるために極めて重要である。このことは、複数の
ウエハを同時に熱酸化処理するバッチ式の熱酸化炉やウ
エハを一枚づつ熱酸化処理する枚葉式の熱酸化炉にかか
わりない。In the thermal oxidation step, it is extremely important to keep the residence time of the oxidizing medium flowing through the thermal oxidation furnaces 1a and 1b constant in the furnace in order to suppress variations in the quality of the thermal oxide film. Is. This is not related to a batch-type thermal oxidation furnace that simultaneously performs thermal oxidation processing on a plurality of wafers or a single-wafer thermal oxidation furnace that performs thermal oxidation processing on each wafer.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、実際の
工場の半導体製造ラインでは、複数の熱酸化炉１ａ、１
ｂやエッチング装置など多種多様の半導体製造装置８ａ
〜８ｃが共通の排出ガス本管６に接続されているので、
この排出ガス本管６内の圧力は、これに接続されている
熱酸化炉１ａ、１ｂや半導体製造装置８ａ〜８ｃの運転
状況により変化する。すなわち、これらの熱酸化炉１
ａ、１ｂや半導体製造装置８ａ〜８ｃは非同期的に稼働
しており、特定の熱酸化炉１ａについては、非同期的に
稼働しているその他の半導体製造装置８ａ〜８ｃの運転
や停止などの状況により特定の熱酸化炉１ａの酸化性媒
体の排出部の排気圧力が時間的に変動する。このため、
この排気圧力の変動が、各熱酸化炉１ａ、１ｂ内のウエ
ハに貫流する酸化性媒体の流速の時間的な変動を引き起
こし、熱酸化炉１ａ、１ｂ内の酸化性媒体の滞留時間の
変動となってウエハ上に形成される熱酸化膜の膜厚や膜
質にばらつきを発生させるという問題があった。However, in a semiconductor manufacturing line of an actual factory, a plurality of thermal oxidation furnaces 1a, 1a are used.
Various semiconductor manufacturing equipment 8a such as b and etching equipment
Since ~ 8c is connected to the common exhaust gas main 6,
The pressure in the exhaust gas main pipe 6 changes depending on the operating conditions of the thermal oxidation furnaces 1a and 1b and the semiconductor manufacturing apparatuses 8a to 8c connected thereto. That is, these thermal oxidation furnaces 1
a, 1b and the semiconductor manufacturing apparatuses 8a to 8c are operating asynchronously, and regarding the specific thermal oxidation furnace 1a, the situation such as the operation and stop of the other semiconductor manufacturing apparatuses 8a to 8c which are operating asynchronously. As a result, the exhaust pressure of the oxidizing medium discharge portion of the specific thermal oxidation furnace 1a fluctuates with time. For this reason,
This fluctuation of the exhaust pressure causes a temporal fluctuation of the flow rate of the oxidizing medium flowing through the wafer in each of the thermal oxidation furnaces 1a and 1b, and a fluctuation of the residence time of the oxidizing medium in the thermal oxidation furnaces 1a and 1b. Therefore, there is a problem in that the film thickness and film quality of the thermal oxide film formed on the wafer vary.
【０００５】これは、熱酸化炉１ａ、１ｂや半導体製造
装置８ａ〜８ｃの排出配管３ａ、３ｂ、１１ａ〜１１ｃ
から排出されたガスが共通の排出ガス本管６に流れる
と、排出ガス本管６のガスの流量が変動し、熱酸化炉１
ａ、１ｂや半導体製造装置の排出配管３ａ、３ｂ、１１
ａ〜１１ｃのガスも排出ガス本管６のガスの流量の変動
に起因してガスの吸引速度が速くなったり遅くなったり
するためである。This is the discharge pipes 3a, 3b, 11a to 11c of the thermal oxidation furnaces 1a and 1b and the semiconductor manufacturing apparatuses 8a to 8c.
When the gas discharged from the exhaust gas main 6 flows into the common exhaust gas main 6, the flow rate of the gas in the exhaust gas main 6 changes and the thermal oxidation furnace 1
a, 1b and discharge pipes 3a, 3b, 11 of semiconductor manufacturing equipment
This is because the gas of a to 11c also increases or decreases the gas suction speed due to the fluctuation of the flow rate of the gas in the exhaust gas main pipe 6.
【０００６】そこで、本発明の目的は、外部からの影響
によるガスの圧力の変動を防止できる半導体製造装置を
提供することにある。Therefore, an object of the present invention is to provide a semiconductor manufacturing apparatus capable of preventing fluctuations in gas pressure due to external influences.
【０００７】[0007]
【課題を解決するための手段】上述した課題を解決する
ために、本発明の半導体製造装置では、ガスを導入して
処理を行うための反応室と、前記反応室からガスを排出
する第１の排出手段と、前記第１の排出手段からのガス
の排出量を調整する調整手段と、前記調整手段の下流側
のガスの圧力を検出する検出手段と、前記検出手段によ
り検出された圧力に基づいて前記調整手段におけるガス
の排出量を制御する制御手段とを備えている。In order to solve the above-mentioned problems, in a semiconductor manufacturing apparatus of the present invention, a reaction chamber for introducing a gas to perform processing and a first chamber for discharging the gas from the reaction chamber are provided. Discharge means, adjusting means for adjusting the amount of gas discharged from the first discharging means, detecting means for detecting the pressure of gas on the downstream side of the adjusting means, and pressure detected by the detecting means. And a control means for controlling the amount of gas discharged by the adjusting means based on the above.
【０００８】また、本発明の半導体製造装置では、前記
半導体製造装置の複数に共通の第２の排出手段が設けら
れるとともに、前記検出手段は前記第２の排出手段内の
ガスの圧力を検出する。Also, in the semiconductor manufacturing apparatus of the present invention, the second discharging means common to the plurality of semiconductor manufacturing apparatuses is provided, and the detecting means detects the pressure of the gas in the second discharging means. .
【０００９】[0009]
【作用】本発明によれば、外部からの影響で第１の排出
手段から排出されたガスの下流側の圧力が変動した場
合、検出手段により検出されたこの下流側の圧力に基づ
いて制御手段が調整手段を制御して反応室からのガスの
排出量を制御することにより、反応室内のガスの圧力の
変動を防止できる。According to the present invention, when the downstream pressure of the gas discharged from the first discharging means fluctuates due to the influence from the outside, the control means is based on the downstream pressure detected by the detecting means. By controlling the adjusting means to control the amount of gas discharged from the reaction chamber, it is possible to prevent fluctuation of the gas pressure in the reaction chamber.
【００１０】[0010]
【実施例】以下、本発明の実施例について図面を参照し
ながら説明する。図１は本発明の一実施例による半導体
製造装置の配管系統を示す概略図である。図１におい
て、縦型の熱酸化炉１ａ、１ｂの各反応室からのガスの
排出のための排出配管３ａ、３ｂは排出ガス本管６に接
続されるとともに、洗浄装置やエッチング装置或いはＣ
ＶＤ装置などの半導体製造装置８ａ、８ｂ、８ｃからの
ガスの排出のための排出配管１１ａ、１１ｂ、１１ｃも
排出ガス本管６に接続されている。この排出ガス本管６
はブロアなどで吸引されるとともに、排出ガスを除去処
理する排出ガス除害処理装置７に接続されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a piping system of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, exhaust pipes 3a and 3b for exhausting gas from the reaction chambers of the vertical thermal oxidation furnaces 1a and 1b are connected to an exhaust gas main pipe 6, and a cleaning device, an etching device, or a C
Exhaust pipes 11a, 11b, 11c for exhausting gas from the semiconductor manufacturing devices 8a, 8b, 8c such as VD devices are also connected to the exhaust gas main pipe 6. This exhaust gas main 6
Is sucked by a blower or the like, and is connected to an exhaust gas abatement treatment device 7 that removes exhaust gas.
【００１１】また、図２は本発明の一実施例による縦型
の熱酸化炉の構成を示す断面図である。図２において、
縦型の熱酸化炉１ａ、１ｂには、半導体ウエハ９を熱処
理する反応室があり、反応室内には複数の半導体ウエハ
９を配置するウエハ支持台１０が設けられるとともに反
応室内を８００〜１０００℃に加熱する不図示の加熱処
理手段が設けられている。また、各反応室にはガスを供
給する供給口１２ａ、１２ｂ及び排出口１３ａ、１３ｂ
が設けられ、供給口１２ａ、１２ｂはガスの流量を調節
する給気バルブ４ａ、４ｂを介して供給配管２ａ、２ｂ
に接続されるとともに排出口１３ａ、１３ｂはガスの流
量を調節する排気バルブ５ａ、５ｂを介して排出配管３
ａ、３ｂに接続されている。これらの給気バルブ４ａ、
４ｂ及び排気バルブ５ａ、５ｂはスロットバルブやバタ
フライバルブなどであって、弁の開度により流量を制御
できる。FIG. 2 is a sectional view showing the structure of a vertical thermal oxidation furnace according to an embodiment of the present invention. In FIG.
Each of the vertical thermal oxidation furnaces 1a and 1b has a reaction chamber for heat-treating the semiconductor wafer 9, a wafer support 10 for disposing a plurality of semiconductor wafers 9 is provided in the reaction chamber, and the reaction chamber has a temperature of 800 to 1000 ° C. A heat treatment means (not shown) is provided for heating. Further, supply ports 12a and 12b for supplying gas and discharge ports 13a and 13b are supplied to each reaction chamber.
Is provided, and the supply ports 12a and 12b are provided with supply pipes 2a and 2b through supply valves 4a and 4b for adjusting the flow rate of gas.
And exhaust ports 13a and 13b are connected to the exhaust pipe 3 via exhaust valves 5a and 5b for adjusting the flow rate of gas.
a, 3b. These air supply valves 4a,
4b and exhaust valves 5a, 5b are slot valves, butterfly valves, etc., and the flow rate can be controlled by the opening of the valves.
【００１２】また、排気バルブ５ａ、５ｂと図１の排出
ガス本管６との間の排出配管３ａ、３ｂ内に、ガスの圧
力を計測する圧力センサ１４ａ、１４ｂが設けられてい
る。この圧力センサ１４ａ、１４ｂは排出配管３ａ、３
ｂ内の圧力を測定して、その測定結果を示す信号を圧力
制御回路１５に送る。圧力制御回路１５は、圧力センサ
１４ａ、１４ｂからの信号に基づいて、排気バルブ５
ａ、５ｂの弁の開度を調整する。すなわち、排気バルブ
５ａ、５ｂの排出ガス本管６側の圧力が下がったら排気
バルブ５ａ、５ｂの弁の開度を上げ、圧力が上がったら
排気バルブ５ａ、５ｂの弁の開度を下げて反応室内の圧
力を一定に保つようにする。なお、圧力センサ１４ａ、
１４ｂにより排出ガス本管６の圧力を検出してもよい。Pressure sensors 14a and 14b for measuring gas pressure are provided in the exhaust pipes 3a and 3b between the exhaust valves 5a and 5b and the exhaust gas main pipe 6 shown in FIG. The pressure sensors 14a and 14b are connected to the discharge pipes 3a and 3
The pressure in b is measured and a signal indicating the measurement result is sent to the pressure control circuit 15. The pressure control circuit 15 controls the exhaust valve 5 based on the signals from the pressure sensors 14a and 14b.
Adjust the opening of the valves a, 5b. That is, when the pressure on the exhaust gas main 6 side of the exhaust valves 5a and 5b decreases, the opening degree of the valves of the exhaust valves 5a and 5b increases, and when the pressure increases, the opening degrees of the exhaust valves 5a and 5b decrease to react. Try to keep the pressure in the room constant. The pressure sensor 14a,
The pressure of the exhaust gas main pipe 6 may be detected by 14b.
【００１３】なお、供給配管２ａ、２ｂ内のガスの圧力
が排出配管３ａ、３ｂ内のガスの圧力よりも高い場合
は、圧力センサ１４ａ、１４ｂにより検出された排出配
管３ａ、３ｂ内の圧力に基づいて、圧力制御回路１５に
より給気バルブ４ａ、４ｂの弁の開度を調整して反応室
内の圧力を一定に保つようにしてもよい。If the pressure of the gas in the supply pipes 2a, 2b is higher than the pressure of the gas in the discharge pipes 3a, 3b, the pressures in the discharge pipes 3a, 3b detected by the pressure sensors 14a, 14b will be the same. Based on this, the pressure control circuit 15 may adjust the opening degree of the air supply valves 4a and 4b to keep the pressure in the reaction chamber constant.
【００１４】次に、本発明の一実施例の熱酸化炉１ａ、
１ｂによる熱酸化処理方法について図１及び図２を参照
しながら説明する。Next, a thermal oxidation furnace 1a according to an embodiment of the present invention,
The thermal oxidation treatment method according to 1b will be described with reference to FIGS. 1 and 2.
【００１５】まず、図２に示すように、不図示の半導体
製造装置により洗浄などの処理が施された複数の半導体
ウエハ９を熱酸化炉１ａ、１ｂの反応室内のウエハ支持
台１０に配置した後、供給配管２ａ、２ｂと熱酸化炉１
ａ、１ｂの下部に設けられた供給口１２ａ、１２ｂとを
介して酸素（Ｏ2 ）などの酸化性媒体を熱酸化炉１ａ、
１ｂの反応室内に供給する。反応室内は不図示の加熱手
段により８００〜１０００℃に加熱されており、反応室
内に供給された酸化性媒体は、半導体ウエハ９上を貫流
して表面を酸化させた後、排出ガスとして熱酸化炉１
ａ、１ｂの下部に設けられた排出口１３ａ、１３ｂから
排出配管３ａ、３ｂを介して図１の排出ガス本管６に排
出される。この排出ガスは、排出ガス本管６に接続され
ている排出ガス除害処理装置により排出配管３ａ、３ｂ
から吸引される。First, as shown in FIG. 2, a plurality of semiconductor wafers 9 that have been subjected to cleaning or other processing by a semiconductor manufacturing apparatus (not shown) are placed on a wafer support table 10 in the reaction chambers of the thermal oxidation furnaces 1a and 1b. After that, the supply pipes 2a and 2b and the thermal oxidation furnace 1
a, the supply port 12a provided in the lower portion 1b, the through and 12b oxygen (O 2) thermal oxidation furnace 1a oxidizing media such as,
Supply into the reaction chamber of 1b. The reaction chamber is heated to 800 to 1000 ° C. by a heating means (not shown), and the oxidizing medium supplied into the reaction chamber flows over the semiconductor wafer 9 to oxidize the surface thereof, and then thermally oxidized as exhaust gas. Furnace 1
The exhaust gas is discharged from the exhaust ports 13a and 13b provided at the lower portions of a and 1b to the exhaust gas main pipe 6 of FIG. 1 through the exhaust pipes 3a and 3b. This exhaust gas is discharged from the exhaust pipes 3a and 3b by the exhaust gas abatement treatment device connected to the exhaust gas main pipe 6.
Is sucked from.
【００１６】また、排出配管３ａ、３ｂに取り付けられ
た排気バルブ５ａ、５ｂの下流側には、圧力センサ１４
ａ、１４ｂが設けられており、この圧力センサ１４ａ、
１４ｂによって排出配管３ａ、３ｂ内の排出ガスの流量
を測定することにより排出ガス本管６の圧力の変動を求
め、排出ガス本管６の排出ガスの流量に応じて排気バル
ブ５ａ、５ｂの弁の開度を制御して熱酸化炉１ａ、１ｂ
からの排出ガスの流出量を一定に保つことにより、熱酸
化炉１ａ、１ｂで形成される熱酸化膜の膜質や膜厚のば
らつきを抑制できる。特に、半導体ウエハ９の熱酸化処
理の間に熱酸化炉１ａ、１ｂの各反応室内を流れる酸化
性媒体の平均流速を一定に保つためには、熱酸化炉１
ａ、１ｂにおける供給口１２ａ、１２ｂでの酸化性媒体
の圧力と排出口１３ａ、１３ｂでの酸化性媒体の圧力と
を一定に保つことが望ましい。A pressure sensor 14 is provided on the downstream side of the exhaust valves 5a and 5b attached to the discharge pipes 3a and 3b.
a, 14b are provided, and the pressure sensor 14a,
14b is used to measure the flow rate of the exhaust gas in the exhaust pipes 3a, 3b to obtain the fluctuation of the pressure of the exhaust gas main 6, and the valves of the exhaust valves 5a, 5b are determined according to the flow rate of the exhaust gas of the exhaust gas main 6. Of the thermal oxidation furnaces 1a, 1b by controlling the opening degree of
By keeping the outflow amount of the exhaust gas from the chamber constant, it is possible to suppress variations in film quality and film thickness of the thermal oxide film formed in the thermal oxidation furnaces 1a and 1b. In particular, in order to keep the average flow velocity of the oxidizing medium flowing in each reaction chamber of the thermal oxidation furnaces 1a and 1b constant during the thermal oxidation process of the semiconductor wafer 9,
It is desirable to keep the pressure of the oxidizing medium at the supply ports 12a and 12b at a and 1b and the pressure of the oxidizing medium at the discharge ports 13a and 13b constant.
【００１７】なお、熱酸化処理を行う半導体ウエハ９は
反応室内の中央に設置されるとともに、熱酸化処理中の
反応室の内部圧力は平均してほぼ大気圧に等しい値とな
る。しかし、酸化性媒体を所望の平均流速で反応室の内
部に貫流させるため、供給口１２ａ、１２ｂでの酸化性
媒体の圧力は排出口１３ａ、１３ｂでの酸化性媒体の圧
力より高くする必要がある。このため、供給口１２ａ、
１２ｂと排出口１３ａ、１３ｂとの差圧を１〜１０ｍｍ
Ａｑ程度、酸化性媒体の流量を１〜２０リットル／ｍｉ
ｎ程度とすることが望ましい。The semiconductor wafer 9 to be subjected to the thermal oxidation process is installed in the center of the reaction chamber, and the internal pressure of the reaction chamber during the thermal oxidation process has a value which is approximately equal to the atmospheric pressure on average. However, the pressure of the oxidizing medium at the supply ports 12a and 12b needs to be higher than the pressure of the oxidizing medium at the discharge ports 13a and 13b in order to allow the oxidizing medium to flow through the inside of the reaction chamber at a desired average flow rate. is there. Therefore, the supply port 12a,
The pressure difference between 12b and the discharge ports 13a, 13b is 1 to 10 mm.
Aq, the flow rate of the oxidizing medium is 1 to 20 liters / mi
It is desirable to set it to about n.
【００１８】また、熱酸化炉１ａ、１ｂにおける供給配
管２ａ、２ｂ内の供給ガスの圧力は、酸素ガスなどの酸
化性媒体を供給する装置内に圧力調整弁（レギュレー
タ）などを設置することにより一定に保たれている場合
が多く、熱酸化炉１ａ、１ｂ内における酸化性媒体の平
均流速の精度が厳しくない場合は、圧力制御回路１５に
よる給気バルブ４ａ、４ｂのフィードバック制御を省略
可能である。しかし、半導体デバイスの微細化や高密度
化などに伴って要求される１００ｎｍ程度以下の膜厚の
薄い熱酸化膜を形成する場合、熱酸化炉１ａ、１ｂ内に
おける酸化性媒体の平均流速を厳しく管理する必要があ
り、排気バルブ５ａ、５ｂの弁の開度を調整するととも
に給気バルブ４ａ、４ｂの弁の開度を調整することが好
ましい。The pressure of the supply gas in the supply pipes 2a, 2b in the thermal oxidation furnaces 1a, 1b can be adjusted by installing a pressure control valve (regulator) in the device for supplying an oxidizing medium such as oxygen gas. In many cases, the pressure control circuit 15 can omit the feedback control of the air supply valves 4a and 4b when the accuracy of the average flow rate of the oxidizing medium in the thermal oxidation furnaces 1a and 1b is not severe. is there. However, when forming a thin thermal oxide film having a film thickness of about 100 nm or less, which is required in accordance with miniaturization and high density of semiconductor devices, the average flow velocity of the oxidizing medium in the thermal oxidation furnaces 1a and 1b is strict. It is necessary to control, and it is preferable to adjust the opening degree of the valves of the exhaust valves 5a and 5b and adjust the opening degrees of the valves of the air supply valves 4a and 4b.
【００１９】なお、熱酸化炉１ａ、１ｂに給気バルブ４
ａ、４ｂと排気バルブ５ａ、５ｂとの両方を設置した場
合、熱酸化炉１ａ、１ｂ内へガスを供給する供給側の圧
力と熱酸化炉１ａ、１ｂからガスを排出する排出側の圧
力との差圧が一定となるように制御して熱酸化炉１ａ、
１ｂ内に流れる酸化性媒体の平均流速を一定に保つよう
にしてもよい。また、酸化性媒体は圧縮性媒体であると
ともに圧力制御系に時間応答特性の遅れ時間があること
などにより、絶対圧または大気圧に対する時間的変動に
伴う流速の変動が発生することを抑制するために、供給
側の圧力と排出側の圧力との差圧が一定となるように制
御するとともに、絶対圧または大気圧に対して時間的に
一定となるように制御することが好ましい。これらの一
連の圧力調整や圧力制御は、スロットバルブやバタフラ
イバルブのような弁機構により行われ、計算機システム
を介して設定値制御方式により、予め設定した値に圧力
または差圧を保持することができる。The air supply valve 4 is attached to the thermal oxidation furnaces 1a and 1b.
When both a and 4b and exhaust valves 5a and 5b are installed, the pressure on the supply side that supplies gas into the thermal oxidation furnaces 1a and 1b and the pressure on the exhaust side that discharges gas from the thermal oxidation furnaces 1a and 1b The thermal oxidation furnace 1a is controlled so that the pressure difference between the
The average flow rate of the oxidizing medium flowing in 1b may be kept constant. In addition, the oxidizing medium is a compressible medium, and in order to suppress the fluctuation of the flow velocity due to the temporal fluctuation with respect to absolute pressure or atmospheric pressure due to the delay time of the time response characteristic in the pressure control system. In addition, it is preferable to control the pressure difference between the pressure on the supply side and the pressure on the discharge side to be constant, and to control the pressure to be constant temporally with respect to the absolute pressure or the atmospheric pressure. These series of pressure adjustments and pressure controls are performed by a valve mechanism such as a slot valve or a butterfly valve, and the pressure or differential pressure can be maintained at a preset value by a set value control method via a computer system. it can.
【００２０】以上、本発明の一実施例について説明した
が、縦型の熱酸化炉１ａ、１ｂは横型の熱酸化炉でもよ
い。また、本発明は、ゲート酸化膜を形成する場合など
のように、高い精度が要求される熱酸化炉で特に有効で
あるが、ＣＶＤ装置やエッチング装置などにおいて貫流
するガスの平均流速を時間に対して一定に保つ場合に適
用してもよい。さらに、圧力センサ１４ａ、１４ｂの代
わりに流量計を用いて排出配管３ａ、３ｂ内のガスの流
量を検出し、この検出値に基づいて反応室内の圧力を制
御するようにしてもよい。また、排気バルブ５ａ、５ｂ
の代わりにポンプを用いて反応室内の圧力を制御しても
よく、特に反応室内が減圧されている場合に効果的であ
る。さらに、圧力センサ１４ａ、１４ｂを排出配管３
ａ、３ｂに取り付ける代わりに図１の排出ガス本管６に
圧力センサを取り付けてもよい。Although one embodiment of the present invention has been described above, the vertical thermal oxidation furnaces 1a and 1b may be horizontal thermal oxidation furnaces. Further, the present invention is particularly effective in a thermal oxidation furnace that requires high accuracy, such as in the case of forming a gate oxide film, but the average flow velocity of the gas flowing through in a CVD device, an etching device, etc. Alternatively, it may be applied when it is kept constant. Further, a flow meter may be used instead of the pressure sensors 14a and 14b to detect the flow rate of the gas in the discharge pipes 3a and 3b, and the pressure in the reaction chamber may be controlled based on the detected value. Also, the exhaust valves 5a, 5b
Alternatively, a pump may be used to control the pressure inside the reaction chamber, which is particularly effective when the pressure inside the reaction chamber is reduced. Further, the pressure sensors 14a and 14b are connected to the discharge pipe 3
Instead of attaching to a and 3b, a pressure sensor may be attached to the exhaust gas main pipe 6 of FIG.
【００２１】[0021]
【発明の効果】本発明によれば、半導体製造装置の反応
室内のガスの圧力の変動を防止できるので、そこで製造
される半導体装置の信頼性や品質が向上する。According to the present invention, the fluctuation of the gas pressure in the reaction chamber of the semiconductor manufacturing apparatus can be prevented, so that the reliability and quality of the semiconductor device manufactured therein can be improved.
【図１】半導体製造装置の配管系統を示す概略的な図で
ある。FIG. 1 is a schematic diagram showing a piping system of a semiconductor manufacturing apparatus.
【図２】本発明の一実施例による縦型の熱酸化炉の構成
を示す断面図である。FIG. 2 is a sectional view showing the configuration of a vertical thermal oxidation furnace according to an embodiment of the present invention.
１ａ、１ｂ 熱拡散炉 ２ａ、２ｂ 供給配管 ３ａ、３ｂ、１１ａ、１１ｂ、１１ｃ 排出配管 ４ａ、４ｂ 給気バルブ ５ａ、５ｂ 排気バルブ ６ 排出ガス本管 ７ 排出ガス除害処理装置 ８ 半導体製造装置 ９ ウエハ １０ ウエハ支持台 １２ａ、１２ｂ 供給口 １３ａ、１３ｂ 排出口 １４ａ、１４ｂ 圧力センサ １５ 圧力制御回路 1a, 1b Thermal diffusion furnace 2a, 2b Supply pipe 3a, 3b, 11a, 11b, 11c Exhaust pipe 4a, 4b Air supply valve 5a, 5b Exhaust valve 6 Exhaust gas main pipe 7 Exhaust gas abatement treatment device 8 Semiconductor manufacturing device 9 Wafer 10 Wafer support 12a, 12b Supply port 13a, 13b Discharge port 14a, 14b Pressure sensor 15 Pressure control circuit
Claims (2)
と、 前記反応室からガスを排出する第１の排出手段と、 前記第１の排出手段からのガスの排出量を調整する調整
手段と、 前記調整手段の下流側のガスの圧力を検出する検出手段
と、 前記検出手段により検出された圧力に基づいて前記調整
手段におけるガスの排出量を制御する制御手段とを備え
ることを特徴とする半導体製造装置。1. A reaction chamber for introducing a gas to perform processing, a first discharge means for discharging the gas from the reaction chamber, and an adjustment for adjusting a discharge amount of the gas from the first discharge means. Means, a detecting means for detecting the pressure of the gas on the downstream side of the adjusting means, and a control means for controlling the discharge amount of the gas in the adjusting means based on the pressure detected by the detecting means. Semiconductor manufacturing equipment.
に共通の第２の排出手段が設けられるとともに、前記検
出手段は前記第２の排出手段内のガスの圧力を検出する
ことを特徴とする半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein a plurality of second discharging means common to the plurality of semiconductor manufacturing apparatuses are provided, and the detecting means detects the pressure of the gas in the second discharging means. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29564694A JPH08139085A (en) | 1994-11-04 | 1994-11-04 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29564694A JPH08139085A (en) | 1994-11-04 | 1994-11-04 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08139085A true JPH08139085A (en) | 1996-05-31 |
Family
ID=17823346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29564694A Withdrawn JPH08139085A (en) | 1994-11-04 | 1994-11-04 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08139085A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001035453A1 (en) * | 1999-11-09 | 2001-05-17 | Tokyo Electron Limited | Heat treatment device |
| JP2003021316A (en) * | 2001-07-03 | 2003-01-24 | Matsushita Environment Airconditioning Eng Co Ltd | Cleaner for exhaust gas generated in board manufacturing device having photo process |
| EP1357582A1 (en) * | 2000-10-27 | 2003-10-29 | Tokyo Electron Limited | Heat-treating device |
| WO2008001688A1 (en) * | 2006-06-28 | 2008-01-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
| KR101255510B1 (en) * | 2010-11-26 | 2013-04-16 | 엘지디스플레이 주식회사 | A exhaust system and a control method thereof |
-
1994
- 1994-11-04 JP JP29564694A patent/JPH08139085A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001035453A1 (en) * | 1999-11-09 | 2001-05-17 | Tokyo Electron Limited | Heat treatment device |
| US6936108B1 (en) | 1999-11-09 | 2005-08-30 | Tokyo Electron Limited | Heat treatment device |
| EP1357582A1 (en) * | 2000-10-27 | 2003-10-29 | Tokyo Electron Limited | Heat-treating device |
| JP2003021316A (en) * | 2001-07-03 | 2003-01-24 | Matsushita Environment Airconditioning Eng Co Ltd | Cleaner for exhaust gas generated in board manufacturing device having photo process |
| WO2008001688A1 (en) * | 2006-06-28 | 2008-01-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
| US7682987B2 (en) | 2006-06-28 | 2010-03-23 | Hitachi Kokusai Electric Inc. | Device for processing substrate and method of manufacturing semiconductor device |
| KR101020667B1 (en) * | 2006-06-28 | 2011-03-09 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus and semiconductor device manufacturing method |
| US8003411B2 (en) | 2006-06-28 | 2011-08-23 | Hitachi Kokusai Electric Inc. | Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device |
| JP5075819B2 (en) * | 2006-06-28 | 2012-11-21 | 株式会社日立国際電気 | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
| US8448599B2 (en) | 2006-06-28 | 2013-05-28 | Hitachi Kokusai Electric Inc. | Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device |
| KR101255510B1 (en) * | 2010-11-26 | 2013-04-16 | 엘지디스플레이 주식회사 | A exhaust system and a control method thereof |
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