JPH05121361A - Semiconductor wafer cooler - Google Patents
Semiconductor wafer coolerInfo
- Publication number
- JPH05121361A JPH05121361A JP28116291A JP28116291A JPH05121361A JP H05121361 A JPH05121361 A JP H05121361A JP 28116291 A JP28116291 A JP 28116291A JP 28116291 A JP28116291 A JP 28116291A JP H05121361 A JPH05121361 A JP H05121361A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- gas introduction
- semiconductor wafer
- refrigerant gas
- constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えばＲＩＥ（反応
性イオンエッチング）およびＣＶＤ（化学気相堆積）等
のような半導体ウエハ真空処理装置に用いられ、被処理
物としての半導体ウエハを冷却する半導体ウエハ冷却装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in a semiconductor wafer vacuum processing apparatus such as RIE (reactive ion etching) and CVD (chemical vapor deposition) to cool a semiconductor wafer as an object to be processed. The present invention relates to a semiconductor wafer cooling device.
【０００２】[0002]
【従来の技術】図３は従来の半導体ウエハ冷却装置が適
用された半導体ウエハ真空処理装置の概略構成を示す図
である。図において、１は壁面に反応ガス２の導入口１
ａおよび真空ポンプ（図示せず）への接続口１ｂがそれ
ぞれ形成される真空チャンバー、３はこの真空チャンバ
ー２の底部に設けられ、Ｏリング４を介して半導体ウエ
ハ５を担持するステージ、６はこのステージ３と半導体
ウエハ５の裏面との間に形成される間隙、７は真空チャ
ンバー２の上部のステージ３と対向する位置に設けられ
る電極である。2. Description of the Related Art FIG. 3 is a diagram showing a schematic structure of a semiconductor wafer vacuum processing apparatus to which a conventional semiconductor wafer cooling apparatus is applied. In the figure, 1 is an inlet 1 for the reaction gas 2 on the wall surface.
a and a vacuum chamber 3 in which a connection port 1b to a vacuum pump (not shown) is formed respectively, a vacuum chamber 3 is provided at the bottom of the vacuum chamber 2, and a stage for carrying a semiconductor wafer 5 via an O-ring 4 is provided. A gap 7 formed between the stage 3 and the back surface of the semiconductor wafer 5 is an electrode provided at a position facing the stage 3 above the vacuum chamber 2.
【０００３】８はステージ３内を貫通して間隙６に連通
し、間隙６内に冷媒ガス９を導入するガス導入路、１０
はこのガス導入路８に接続されガス導入路８内を流れる
冷媒ガス９の流量を調節する冷媒ガス導入バルブ、１１
はガス導入路８内の圧力を測定する圧力測定器、１２は
この圧力測定器１１からの測定圧力信号１３を取り込
み、冷媒ガス導入バルブ１０へ開閉量指示信号１４を送
出するバルブ開閉制御器である。そして、これら間隙
６、ガス導入路８、冷媒ガス導入バルブ１０、圧力測定
器１１およびバルブ開閉制御器１２で半導体ウエハ冷却
装置２０を構成している。Reference numeral 8 denotes a gas introducing passage which penetrates through the stage 3 and communicates with the gap 6, and introduces a refrigerant gas 9 into the gap 6.
Is a refrigerant gas introduction valve which is connected to the gas introduction path 8 and adjusts the flow rate of the refrigerant gas 9 flowing in the gas introduction path 8;
Is a pressure measuring device for measuring the pressure in the gas introduction passage 8, and 12 is a valve opening / closing controller for taking in the measured pressure signal 13 from the pressure measuring device 11 and sending an opening / closing amount instruction signal 14 to the refrigerant gas introduction valve 10. is there. The gap 6, the gas introduction passage 8, the refrigerant gas introduction valve 10, the pressure measuring device 11 and the valve opening / closing controller 12 constitute a semiconductor wafer cooling device 20.
【０００４】次に動作について説明する。ＲＩＥやＣＶ
Ｄ等のような半導体ウエハ真空処理装置においては、反
応ガス２を導入口１ａから真空チャンバー１内に流し込
み、真空チャンバー１内が所定の圧力となるように、真
空ポンプによって接続口１ｂから排気しながら、電極７
とステージ３間に高周波電力を印加し、両者７、３間に
プラズマを生成して半導体ウエハ５を処理している。こ
のような処理中に半導体ウエハ５はプラズマに曝され、
又、表面での化学反応により加熱される。Next, the operation will be described. RIE and CV
In a semiconductor wafer vacuum processing apparatus such as D, the reaction gas 2 is flown into the vacuum chamber 1 through the inlet 1a, and is exhausted from the connection port 1b by a vacuum pump so that the vacuum chamber 1 has a predetermined pressure. While the electrode 7
The high-frequency power is applied between the stage 3 and the stage 3 to generate plasma between both 7 and 3 to process the semiconductor wafer 5. During such processing, the semiconductor wafer 5 is exposed to plasma,
Also, it is heated by a chemical reaction on the surface.
【０００５】このような加熱の影響を防ぐために、装置
には半導体ウエハ冷却装置２０が組み込まれている。す
なわち、半導体ウエハ冷却装置２０は、ガス道入路８か
らステージ３と半導体ウエハ５の裏面との間に形成され
る間隙６へ冷媒ガス９を供給し、この冷媒ガス９によっ
て半導体ウエハ５の昇温を防止している。この際、冷媒
ガス９の伝熱能力は圧力によって異なるため、間隙６内
の圧力を一定に保持しておく必要がある。このため、Ｏ
リング４等のシール材により冷媒ガス９が真空チャンバ
ー１内に漏れるのを極力抑えるとともに、圧力測定器１
１によりガス導入路８内の圧力を検出し、この測定圧力
信号１３に基づいてバルブ開閉制御器１２は冷媒ガス導
入バルブ１０へ開閉量指示信号１４を送出し、冷媒ガス
導入バルブ１０の開度を調節して間隙６内の冷媒ガス９
の圧力が一定になるように制御する。In order to prevent the influence of such heating, a semiconductor wafer cooling device 20 is incorporated in the device. That is, the semiconductor wafer cooling device 20 supplies the refrigerant gas 9 from the gas passage 8 to the gap 6 formed between the stage 3 and the back surface of the semiconductor wafer 5, and the refrigerant gas 9 raises the semiconductor wafer 5. Prevents temperature. At this time, since the heat transfer capacity of the refrigerant gas 9 varies depending on the pressure, it is necessary to keep the pressure in the gap 6 constant. Therefore, O
The sealant such as the ring 4 suppresses the refrigerant gas 9 from leaking into the vacuum chamber 1 as much as possible, and the pressure measuring device 1
1, the pressure in the gas introduction passage 8 is detected, and based on the measured pressure signal 13, the valve opening / closing controller 12 sends an opening / closing amount instruction signal 14 to the refrigerant gas introduction valve 10 to open the refrigerant gas introduction valve 10. Adjusting the refrigerant gas 9 in the gap 6
The pressure is controlled to be constant.
【０００６】[0006]
【発明が解決しようとする課題】従来の半導体ウエハ冷
却装置は以上のように構成され、圧力測定器１１はガス
導入路８の途中に１個所しか設けられていないため、Ｏ
リング４の部分から冷媒ガス９の漏れが起こっている場
合には、圧力測定器１１で測定されるガス導入路８内の
冷媒ガス９の圧力を一定に制御しても、冷媒ガス９の漏
れが起こっている部分に近い半導体ウエハ５の裏面で
は、冷媒ガス９の圧力が低下し冷却能力が低下する。こ
の冷却能力の低下は冷媒ガス９の漏れ量が多い場合やガ
ス導入路８の径が細い場合に著しくなり、これが原因で
起こる半導体ウエハ５毎の温度差によりエッチング特性
や成膜特性に差が生じたり、半導体ウエハ５にダメージ
を与えたりして、製品品質にバラツキが発生するという
問題点があった。The conventional semiconductor wafer cooling device is constructed as described above, and since the pressure measuring device 11 is provided only at one place in the middle of the gas introduction passage 8,
When the refrigerant gas 9 leaks from the ring 4, even if the pressure of the refrigerant gas 9 in the gas introduction passage 8 measured by the pressure measuring device 11 is controlled to be constant, the refrigerant gas 9 leaks. On the back surface of the semiconductor wafer 5 close to the portion where the heat generation occurs, the pressure of the refrigerant gas 9 decreases and the cooling capacity decreases. This decrease in cooling capacity becomes remarkable when the amount of leakage of the refrigerant gas 9 is large or when the diameter of the gas introduction passage 8 is small, and the temperature difference between the semiconductor wafers 5 caused by this causes a difference in etching characteristics and film forming characteristics. There is a problem that variations occur in the product quality due to the occurrence or damage to the semiconductor wafer 5.
【０００７】この発明は上記のような問題点を解消する
ためになされたもので、冷却能力を常に一定に保持する
ことにより、製品品質のバラツキを防止することができ
る半導体ウエハ冷却装置を提供することを目的とするも
のである。The present invention has been made in order to solve the above problems, and provides a semiconductor wafer cooling device capable of preventing variations in product quality by always maintaining a constant cooling capacity. The purpose is that.
【０００８】[0008]
【課題を解決するための手段】この発明に係る半導体ウ
エハ冷却装置は、真空チャンバー内に設けられ半導体ウ
エハを所定の間隙を介して支持するステージと、間隙内
へガス導入路を介して所定量の冷媒ガスを導入する冷媒
ガス導入バルブと、ガス導入路内に設けられガス導入路
内に圧力差を発生させる圧力差発生手段と、この圧力差
発生手段の前後にそれぞれ設けられガス導入路内のそれ
ぞれの位置の圧力を測定する第１および第２の圧力測定
器と、これら第１および第２の圧力測定器でそれぞれ測
定される各圧力値および圧力差によって冷媒ガス導入バ
ルブの開閉量を調節して間隙内の圧力を一定に制御する
圧力制御手段とを備えたものである。SUMMARY OF THE INVENTION A semiconductor wafer cooling device according to the present invention comprises a stage provided in a vacuum chamber for supporting a semiconductor wafer through a predetermined gap, and a predetermined amount through a gas introduction passage into the gap. Refrigerant gas introduction valve for introducing the refrigerant gas, pressure difference generation means for generating a pressure difference in the gas introduction path provided in the gas introduction path, and in the gas introduction path respectively provided before and after the pressure difference generation means The first and second pressure measuring devices that measure the pressure at the respective positions, and the opening and closing amount of the refrigerant gas introduction valve based on the pressure values and the pressure differences measured by the first and second pressure measuring devices, respectively. And a pressure control means for adjusting the pressure in the gap to a constant value.
【０００９】[0009]
【作用】この発明における半導体ウエハ冷却装置のバル
ブ開閉制御器は、ガス導入路内に形成される圧力差発生
手段前後で測定される圧力と圧力差によって、半導体裏
面の間隙内の冷媒ガスの圧力を予測し、この予測圧力が
一定となるように、冷媒ガス導入バルブの開閉量を制御
する。The valve opening / closing controller of the semiconductor wafer cooling apparatus according to the present invention determines the pressure of the refrigerant gas in the gap on the back surface of the semiconductor by the pressure and the pressure difference measured before and after the pressure difference generating means formed in the gas introduction passage. Is predicted, and the opening / closing amount of the refrigerant gas introduction valve is controlled so that the predicted pressure becomes constant.
【００１０】[0010]
【実施例】実施例１ 以下、この発明の実施例を図について説明する。図１は
この発明の実施例１における半導体ウエハ冷却装置が適
用された半導体ウエハ真空処理装置の概略構成を示す図
である。図において、真空チャンバー１、導入口１ａ、
反応ガス２、ステージ３、Ｏリング４、半導体ウエハ
５、間隙６、電極７、ガス導入路８、冷媒ガス９および
冷媒ガス導入バルブ１０は図３に示す従来装置における
ものと同様である。Embodiment 1 Embodiments of the present invention will be described below with reference to the drawings. 1 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus to which a semiconductor wafer cooling apparatus according to a first embodiment of the present invention is applied. In the figure, a vacuum chamber 1, an inlet 1a,
The reaction gas 2, stage 3, O-ring 4, semiconductor wafer 5, gap 6, electrode 7, gas introduction path 8, refrigerant gas 9 and refrigerant gas introduction valve 10 are the same as those in the conventional apparatus shown in FIG.
【００１１】２１はガス導入路８内に形成される圧力差
発生手段としてのオリフイス、２２はこのオリフイス２
１の冷媒ガス９の流れの下流側に接続され圧力を測定す
る第１の圧力測定器、２３はオリフイス２１の冷媒ガス
９の流れの上流側に接続され圧力を測定する第２の圧力
測定器、２４はこれら第１および第２の圧力測定器２
２，２３によってそれぞれ測定され、出力される各測定
圧力信号２５，２６に基づいて、冷媒ガス導入バルブ１
０へ開閉量指示信号２７を送出して、ガス導入路８内に
導入される冷媒ガス９の流量を制御するバルブ開閉制御
器である。そして、これら間隙６、ガス導入路８、冷媒
ガス９、冷媒ガス導入バルブ１０、オリフイス２１、第
１の圧力測定器２２、第２の圧力測定器２３およびバル
ブ開閉制御器２４で半導体ウエハ冷却装置３０を構成し
ている。Reference numeral 21 is an orifice as a pressure difference generating means formed in the gas introduction passage 8, and 22 is the orifice 2.
1 is a first pressure measuring device connected to the downstream side of the flow of the refrigerant gas 9 to measure the pressure, and 23 is a second pressure measuring device connected to the upstream side of the flow of the refrigerant gas 9 of the orifice 21 to measure the pressure , 24 are the first and second pressure measuring devices 2
The refrigerant gas introduction valve 1 is based on the measured pressure signals 25 and 26 which are respectively measured and output by 2 and 23.
The valve opening / closing controller controls the flow rate of the refrigerant gas 9 introduced into the gas introduction passage 8 by sending the opening / closing amount instruction signal 27 to 0. Then, the gap 6, the gas introduction passage 8, the refrigerant gas 9, the refrigerant gas introduction valve 10, the orifice 21, the first pressure measuring device 22, the second pressure measuring device 23, and the valve opening / closing controller 24 are used to cool the semiconductor wafer cooling device. Make up thirty.
【００１２】次に、上記のように構成されるこの発明の
実施例１における半導体ウエハ冷却装置３０の動作につ
いて説明する。図２（Ａ）は図１における半導体ウエハ
冷却装置３０のガス導入路８の詳細を示す拡大断面図、
図２（Ｂ）は図２（Ａ）の各部に対応した冷媒ガス流系
の等価回路図であり、図中、Ｉはガス導入路８内を流れ
る冷媒ガス９の流量、Ｐ1は第１の圧力測定器２２で測
定される圧力値、Ｐ2は第２の圧力測定器２３で測定さ
れる圧力値、Ｐは半導体ウエハ５の裏面に形成される間
隙６内の圧力値、Ｒ0はオリフイス２１の流路抵抗、Ｒ1
はガス道入路８内の流路抵抗、Ｒ2はＯリング４部から
の冷媒ガス９の漏れ流路抵抗をそれぞれ表す。Next, the operation of the semiconductor wafer cooling device 30 according to the first embodiment of the present invention configured as described above will be described. 2A is an enlarged sectional view showing details of the gas introduction passage 8 of the semiconductor wafer cooling device 30 in FIG.
2B is an equivalent circuit diagram of the refrigerant gas flow system corresponding to each part of FIG. 2A, in which I is the flow rate of the refrigerant gas 9 flowing in the gas introduction passage 8 and P 1 is the first Pressure value measured by the second pressure measuring device 23, P 2 is a pressure value measured by the second pressure measuring device 23, P is a pressure value in the gap 6 formed on the back surface of the semiconductor wafer 5, and R 0 is Flow path resistance of orifice 21 R 1
Represents the flow passage resistance in the gas passage inlet 8, and R 2 represents the flow passage resistance of the refrigerant gas 9 from the O-ring 4 portion.
【００１３】まず、図２（Ｂ）に示す等価回路から次式
が成立する。 Ｐ2−Ｐ1＝Ｒ0Ｉ・・・・・・・・・・・（１） Ｐ1−Ｐ＝Ｒ1Ｉ ・・・・・・・・・・・（２） 上記式（１）、（２）よりＩを消去してＰについて整理
すると、 Ｐ＝Ｐ1−Ｒ1／Ｒ0（Ｐ2−Ｐ1）・・・・（３） が得られる。この式（３）より、圧力Ｐを一定に制御す
るためには、第１の圧力測定器２２で測定される圧力値
Ｐ1から、オリフイス２１の前後で第１および第２の圧
力測定器２２，２３で測定される圧力値の差（Ｐ2−
Ｐ1）に係数Ｒ1／Ｒ0を乗じた値を差し引いた値が一定
となるように制御すれば良いことがわかる。First, the following equation is established from the equivalent circuit shown in FIG. P 2 -P 1 = R 0 I (1) P 1 -P = R 1 I (2) Formula (1) , (2), I is deleted and rearranged for P, P = P 1 −R 1 / R 0 (P 2 −P 1 ) ... (3) is obtained. According to this equation (3), in order to control the pressure P to be constant, the first and second pressure measuring devices 22 before and after the orifice 21 are calculated from the pressure value P 1 measured by the first pressure measuring device 22. , 23, the difference in pressure values measured (P 2 −
It can be seen that the value obtained by subtracting the value obtained by multiplying P 1 ) by the coefficient R 1 / R 0 may be controlled to be constant.
【００１４】又、係数Ｒ1／Ｒ0は、半導体ウエハ５がス
テージ３上に載置されていない状態（圧力Ｐ＝０とみな
せる）にて、第１および第２の圧力測定器２２，２３で
それぞれの位置の圧力値Ｐ1，Ｐ2を測定することによっ
て容易に得られる。すなわち、上記各圧力値Ｐ1，Ｐ2を
Ｐ10，Ｐ20とすると、式（３）は ０＝Ｐ10−Ｒ1／Ｒ0（Ｐ20−Ｐ10）・・・（４） となり、式４を整理すると、 Ｒ1／Ｒ0＝Ｐ10／Ｐ20−Ｐ10・・・・・・（５） となり、式５として求めることができる。Further, the coefficients R 1 / R 0 are the first and second pressure measuring instruments 22 and 23 when the semiconductor wafer 5 is not placed on the stage 3 (the pressure P can be regarded as 0). Can be easily obtained by measuring the pressure values P 1 and P 2 at the respective positions. That is, assuming that the pressure values P 1 and P 2 are P 10 and P 20 , respectively, the equation (3) becomes 0 = P 10 −R 1 / R 0 (P 20 −P 10 ) ... (4), When Formula 4 is arranged, R 1 / R 0 = P 10 / P 20 −P 10 ... (5) and can be obtained as Formula 5.
【００１５】したがって、バルブ開閉制御器２４は第１
および第２の圧力測定器２２，２３からの各測定圧力信
号２５，２６と、予め式（５）によって求められる係数
とを基に、式３に示される間隙６内の圧力Ｐが常に一定
になるように、冷媒ガス導入バルブ１０へ開閉量指示信
号を送出して、冷媒ガス導入バルブ１０の開度を調節す
ることにより、ガス導入路８内に導入される冷媒ガス９
の流量を制御すれば、間隙６内に裏面が隣接される半導
体ウエハ５は常に一定能力で冷却されるので個々でエッ
チング特性や成膜特性に差が生じることはなくなる。Therefore, the valve opening / closing controller 24 has the first
Based on the measured pressure signals 25 and 26 from the second pressure measuring devices 22 and 23 and the coefficient previously obtained by the equation (5), the pressure P in the gap 6 shown in the equation 3 is always constant. As described above, the opening / closing amount instruction signal is sent to the refrigerant gas introduction valve 10 to adjust the opening degree of the refrigerant gas introduction valve 10 to introduce the refrigerant gas 9 into the gas introduction passage 8.
If the flow rate is controlled, the semiconductor wafer 5 whose back surface is adjacent to the inside of the gap 6 is always cooled with a constant capacity, so that there is no difference in etching characteristics and film forming characteristics.
【００１６】実施例２ 尚、上記実施例１では圧力差発生手段としてオリフイス
２１を示して説明したが、ニードルバルブ等のように流
路抵抗を持つものであれば何でも良く、上記実施例１と
同様の効果を奏する。Embodiment 2 In the first embodiment, the orifice 21 is shown as the pressure difference generating means, but any device having a flow path resistance such as a needle valve may be used. Has the same effect.
【００１７】[0017]
【発明の効果】以上のように、この発明によれば真空チ
ャンバー内に設けられ半導体ウエハを所定の間隙を介し
て支持するステージと、間隙内へガス導入路を介して所
定量の冷媒ガスを導入する冷媒ガス導入バルブと、ガス
導入路内に設けられガス導入路内に圧力差を発生させる
圧力差発生手段と、この圧力差発生手段の前後にそれぞ
れ設けられガス導入路内のそれぞれの位置の圧力を測定
する第１および第２の圧力測定器と、これら第１および
第２の圧力測定器でそれぞれ測定される各圧力値および
圧力差によって冷媒ガス導入バルブの開閉量を調節して
間隙内の圧力を一定に制御する圧力制御手段とを備えた
ので、冷却能力を常に一定に保持して、製品品質のバラ
ツキを防止することができる半導体ウエハ冷却装置を提
供することを目的とするものである。As described above, according to the present invention, a stage provided in a vacuum chamber for supporting a semiconductor wafer via a predetermined gap and a predetermined amount of a refrigerant gas into the gap via a gas introduction passage. Refrigerant gas introduction valve to be introduced, pressure difference generation means provided in the gas introduction passage for generating a pressure difference in the gas introduction passage, and respective positions in the gas introduction passage provided before and after the pressure difference generation means And the second pressure measuring device for measuring the pressure of the refrigerant, and the opening and closing amount of the refrigerant gas introduction valve is adjusted by each pressure value and the pressure difference measured by the first and second pressure measuring devices, respectively, and the gap is adjusted. An object of the present invention is to provide a semiconductor wafer cooling device which is provided with a pressure control means for controlling the internal pressure to be constant, so that the cooling capacity can always be kept constant and variation in product quality can be prevented. It is intended to.
【図１】この発明の実施例１における半導体ウエハ冷却
装置が適用された半導体ウエハ真空処理装置の概略構成
を示す図である。FIG. 1 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus to which a semiconductor wafer cooling apparatus according to a first embodiment of the present invention is applied.
【図２】図２（Ａ）は図１における半導体ウエハ冷却装
置のガス導入路の詳細を示す拡大断面図、図２（Ｂ）は
図２（Ａ）の各部に対応した冷媒ガス流系の等価回路図
である。2 (A) is an enlarged cross-sectional view showing details of a gas introduction path of the semiconductor wafer cooling device in FIG. 1, and FIG. 2 (B) is a refrigerant gas flow system corresponding to each part of FIG. 2 (A). It is an equivalent circuit diagram.
【図３】従来の半導体ウエハ冷却装置が適用された半導
体ウエハ真空処理装置の概略構成を示す図である。FIG. 3 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus to which a conventional semiconductor wafer cooling apparatus is applied.
１ 真空チャンバー ３ ステージ ５ 半導体ウエハ ６ 間隙 ７ 電極 ８ ガス導入路 ９ 冷媒ガス １０ 冷媒ガス導入バルブ ２１ オリフイス（圧力差発生手段） ２２ 第１の圧力測定器 ２３ 第２の圧力測定器 ２４ バルブ開閉制御器（圧力制御手段） ３０ 半導体ウエハ冷却装置 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 3 Stage 5 Semiconductor wafer 6 Gap 7 Electrode 8 Gas introduction path 9 Refrigerant gas 10 Refrigerant gas introduction valve 21 Orifice (pressure difference generating means) 22 First pressure measuring instrument 23 Second pressure measuring instrument 24 Valve opening / closing control Container (pressure control means) 30 semiconductor wafer cooling device
Claims (1)
ハを所定の間隙を介して支持するステージと、上記間隙
内へガス導入路を介して所定量の冷媒ガスを導入する冷
媒ガス導入バルブと、上記ガス導入路内に設けられ上記
ガス導入路内に圧力差を発生させる圧力差発生手段と、
この圧力差発生手段の前後にそれぞれ設けられ上記ガス
導入路内のそれぞれの位置の圧力を測定する第１および
第２の圧力測定器と、これら第１および第２の圧力測定
器でそれぞれ測定される各圧力値および圧力差によって
上記冷媒ガス導入バルブの開閉量を調節して上記間隙内
の圧力を一定に制御する圧力制御手段とを備えたことを
特徴とする半導体ウエハ冷却装置。1. A stage provided in a vacuum chamber for supporting a semiconductor wafer via a predetermined gap, a refrigerant gas introduction valve for introducing a predetermined amount of a refrigerant gas into the gap via a gas introduction path, A pressure difference generating means for generating a pressure difference in the gas introduction path provided in the gas introduction path,
First and second pressure measuring devices, which are respectively provided before and after the pressure difference generating means and measure pressures at respective positions in the gas introduction passage, are measured by the first and second pressure measuring devices, respectively. A semiconductor wafer cooling device, comprising: a pressure control unit that adjusts the opening / closing amount of the refrigerant gas introduction valve according to each pressure value and pressure difference to constantly control the pressure in the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28116291A JPH05121361A (en) | 1991-10-28 | 1991-10-28 | Semiconductor wafer cooler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28116291A JPH05121361A (en) | 1991-10-28 | 1991-10-28 | Semiconductor wafer cooler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05121361A true JPH05121361A (en) | 1993-05-18 |
Family
ID=17635220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28116291A Pending JPH05121361A (en) | 1991-10-28 | 1991-10-28 | Semiconductor wafer cooler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05121361A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100213448B1 (en) * | 1996-07-25 | 1999-08-02 | 윤종용 | An air supplying apparatus for semiconductor device fabrication system |
| US6012509A (en) * | 1996-06-04 | 2000-01-11 | Tokyo Electron Limited | Mechanism and method for holding a substrate on a substrate stage of a substrate treatment apparatus |
| US6059891A (en) * | 1997-07-23 | 2000-05-09 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6115867A (en) * | 1997-08-18 | 2000-09-12 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| US6431184B1 (en) | 1997-08-05 | 2002-08-13 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| JP2013191882A (en) * | 2007-01-26 | 2013-09-26 | Hitachi Kokusai Electric Inc | Substrate processing method, method of manufacturing semiconductor device, and semiconductor manufacturing apparatus |
-
1991
- 1991-10-28 JP JP28116291A patent/JPH05121361A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6012509A (en) * | 1996-06-04 | 2000-01-11 | Tokyo Electron Limited | Mechanism and method for holding a substrate on a substrate stage of a substrate treatment apparatus |
| KR100213448B1 (en) * | 1996-07-25 | 1999-08-02 | 윤종용 | An air supplying apparatus for semiconductor device fabrication system |
| US6059891A (en) * | 1997-07-23 | 2000-05-09 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6431184B1 (en) | 1997-08-05 | 2002-08-13 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6115867A (en) * | 1997-08-18 | 2000-09-12 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| US6276378B1 (en) | 1997-08-18 | 2001-08-21 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| JP2013191882A (en) * | 2007-01-26 | 2013-09-26 | Hitachi Kokusai Electric Inc | Substrate processing method, method of manufacturing semiconductor device, and semiconductor manufacturing apparatus |
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