JPH08130326A - Coupling method for semiconductor crystal using light transmitting conductive thin film - Google Patents
Coupling method for semiconductor crystal using light transmitting conductive thin filmInfo
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- JPH08130326A JPH08130326A JP29777794A JP29777794A JPH08130326A JP H08130326 A JPH08130326 A JP H08130326A JP 29777794 A JP29777794 A JP 29777794A JP 29777794 A JP29777794 A JP 29777794A JP H08130326 A JPH08130326 A JP H08130326A
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- thin film
- substrate
- crystal
- layer
- conductive
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、一種の透光導電薄膜応
用の半導体結晶結合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor crystal bonding method applied to a kind of light transmitting conductive thin film.
【０００２】[0002]
【従来の技術】発光ダイオードの領域では、発光ダイオ
ードの光度光度を高める方法として一般に透明の基板が
用いられる。６００ｎｍのアルミニウムガリウムヒ素
（ＡｌＧａＡｓ）の赤色発光ダイオードを例にとると、
この類の発光ダイオードの構造は、ほぼ３種類に分けら
れる。図１中のダイオード構造は、正の導電性のガリウ
ムヒ素（ＧａＡｓ）を基板１１のモノヘテロとしてい
る。モノヘテロ構造は正の導電性を帯びた１層のＡｌＧ
ａＡｓ層を成長させ、さらに一層の負の導電性を帯びた
ＡｌＧａＡｓ層１３を成長させる。この種の発光ダイオ
ードの光度は５００〜８００ｍｃｄとされる。2. Description of the Related Art In the area of light emitting diodes, a transparent substrate is generally used as a method of increasing the luminous intensity of the light emitting diode. Taking a 600 nm aluminum gallium arsenide (AlGaAs) red light emitting diode as an example,
The structure of this type of light emitting diode can be roughly divided into three types. The diode structure in FIG. 1 uses positive conductive gallium arsenide (GaAs) as the monohetero of the substrate 11. The monoheterostructure is a single layer of AlG with positive conductivity.
An aAs layer is grown, and a further negatively conductive AlGaAs layer 13 is grown. The luminous intensity of this type of light emitting diode is 500 to 800 mcd.
【０００３】図２中の発光ダイオードはダブルヘテロ構
造である。ダブルヘテロ構造は、一つの正の導電性のＡ
ｌＧａＡｓ底層２２、一つの不純物を含まない活性Ａｌ
ＧａＡｓ中層２３、及び一つの負の導電性のＡｌＧａＡ
ｓ上層２４を包含する。その基板は正の導電性を帯びた
ＧａＡｓ層２１とされる。この類の発光ダイオードの発
光光度は約１．５ｃｄである。The light emitting diode shown in FIG. 2 has a double hetero structure. The double heterostructure has one positive conductive A
1 GaAs bottom layer 22, one impurity-free active Al
GaAs middle layer 23 and one negative conductive AlGaAs
s upper layer 24. The substrate is a GaAs layer 21 having a positive conductivity. The luminous intensity of a light emitting diode of this kind is about 1.5 cd.
【０００４】図３中の発光ダイオードの構造は、図２に
類似しており、一つの正の導電性のＡｌＧａＡｓ底層３
１、一つの不純物を含まない活性ＡｌＧａＡｓ中層３
２、及び一つの負の導電性のＡｌＧａＡｓ上層３１を包
含する。但し、基板は、正の導電性を帯びたＡｌＧａＡ
ｓ基板３１に代えられる。この種のダイオードの発光の
光度は約３ｃｄに達し、図３に示される構造は図２の構
造に比べ、発光ダイオードの光度が約２倍となってい
る。その主な原因は、透明基板を採用したことであり、
これにより発光ダイオードの発生する光が透明基板の方
向に進むとき、吸収されないためである。The structure of the light emitting diode in FIG. 3 is similar to that of FIG.
1. Active AlGaAs middle layer 3 not containing one impurity
2 and one negative conductive AlGaAs upper layer 31. However, the substrate is AlGaAs having a positive conductivity.
Instead of the s substrate 31. The luminous intensity of light emission of this type of diode reaches about 3 cd, and the luminous intensity of the light emitting diode in the structure shown in FIG. 3 is about twice that of the structure in FIG. The main cause is the adoption of a transparent substrate,
This is because the light generated by the light emitting diode is not absorbed when traveling in the direction of the transparent substrate.
【０００５】以上の図に示された従来の発光ダイオード
の構造中、各半導体層はいずれも液相結晶法で成長させ
られ、図３中のダイオード構造が最も良い発光効率を有
する。しかし非常に厚いＡｌＧａＡｓ基板を成長させる
のは非常に困難であり、そのためこの類のダイオードの
生産は半導体メーカーにとって大きな挑戦となってい
る。[0005] In the structure of the conventional light emitting diode shown in the above figures, each semiconductor layer is grown by a liquid crystal method, and the diode structure in FIG. 3 has the best luminous efficiency. However, it is very difficult to grow very thick AlGaAs substrates, which makes the production of this type of diode a major challenge for semiconductor manufacturers.
【０００６】高効率のその他の色の範囲の発光ダイオー
ド、例えば緑色から赤色の範囲（５６０〜６３０ｎｍ）
の高光度アルミニウムガリウムインジウムリン（ＡｌＧ
ａＩｎＰ）発光ダイオードの生産においては、図４に示
されるように、この伝統的なダブルヘテロは一つの負の
導電性を帯びたＡｌＧａＩｎＰ底層４３、一つの不純物
のない活性ＡｌＧａＩｎＰ層４４、及び正の導電性を帯
びたＡｌＧａＩｎＰ上層４５を包含する。電極接触端４
７、４１からの導電電流の流散を増加するために、ダブ
ルヘテロのＡｌＧａＩｎＰ上層４５にあってはまた一層
の正の導電性を帯びた厚いウインド層４６が成長してい
る。High efficiency other color range light emitting diodes, eg green to red range (560-630 nm)
High brightness aluminum gallium indium phosphide (AlG
In the production of an (aInP) light emitting diode, as shown in FIG. 4, this traditional double hetero is composed of one negatively conductive AlGaInP bottom layer 43, one impurity-free active AlGaInP layer 44, and a positive An AlGaInP upper layer 45 having conductivity is included. Electrode contact end 4
In order to increase the diffusion of the conduction current from 7 and 41, a further positive conductive thick window layer 46 is grown on the double hetero-AlGaInP upper layer 45.
【０００７】現在のＡｌＧａＩｎＰダイオード中、一般
には負の導電性を帯びたガリウムヒ素（ＧａＡｓ）を基
板としている。しかし大部分の基板へと発される光はお
とんどこの不透光の基板に吸収され、ダイオードの発光
効率は制限されてしまう。アメリカ合衆国ＨＰ社のＦ．
Ａ．Ｋｉｓｈ等により提出されたＧａＡｓを腐食し一つ
の透明な同様に負の導電性のガリウムリン（ＧａＰ）基
板と結合し、改良したダイオードでは、その中に使用さ
れる結晶結合技術は先にアメリカ合衆国のマサチューセ
ッツ州リンカーン実験室のＺ．Ｌ．Ｌｉａｕ等による研
究を発展させたものである。この種の改良式のダイオー
ドは、比較的良い発光度を有するとはいえ、二つの欠点
を有していた。一つの欠点は、結晶結合は相当高い温度
中、一般には８３０℃以上で進行されなければならない
こと。もう一つは、ＧａＰとＡｌＧａＩｎＰの接合面上
に、格子定数のミスマッチにより、容易に結晶の弯曲或
いは破裂を起こしやすいことである。[0007] In the current AlGaInP diode, gallium arsenide (GaAs) having a negative conductivity is generally used as a substrate. However, most of the light emitted to the substrate is absorbed by the opaque substrate in most places, and the luminous efficiency of the diode is limited. F. of the United States HP
A. In an improved diode, proposed by Kish et al., Which eroded GaAs and combined it with a transparent, similarly negatively conductive gallium phosphide (GaP) substrate, the crystal bonding technique used therein was previously described by the United States. Z. of Lincoln Laboratory, Mass. L. It is an extension of the research by Liau et al. Although this type of improved diode has a relatively good luminous intensity, it has two disadvantages. One drawback is that crystal bonding must proceed at fairly high temperatures, generally above 830 ° C. The other is that the crystal curvature or rupture is easily caused on the bonding surface of GaP and AlGaInP due to the mismatch of lattice constants.
【０００８】[0008]
【発明が解決しようとする課題】本発明は、一種の新た
な結晶結合技術を提供し、もって従来の技術における困
難な点及び欠点を克服することを主旨とし、本発明中の
結合技術は透明基板を不透明基板に代えて用い、生産す
る発光ダイオードが高い発光効率を有するようにするこ
とを課題とする。SUMMARY OF THE INVENTION The present invention aims at providing a kind of new crystal bonding technique, thereby overcoming the difficulties and disadvantages of the prior art, and the bonding technique in the present invention is transparent. An object of the present invention is to use a substrate in place of an opaque substrate so that a light-emitting diode to be produced has high luminous efficiency.
【０００９】[0009]
【課題を解決するための手段】本発明の透光導電薄膜応
用の半導体結晶結合方法は以下のステップを包含するも
のとする： ａ．一個の半導体素子を含む第１結晶を準備する； ｂ．第２半導体基板を準備する； ｃ．該第２半導体基板上に一層の透光導電薄膜を形成す
る透光導電薄膜を形成する； ｄ．該第２半導体基板と第１結晶をきつく挟み、透光導
電薄膜が第２半導体基板と第１結晶の間を介するように
する； ｅ．きつく挟んだ２片の結晶を高温中で一段時間加熱
し、もって結晶を結合するＱSUMMARY OF THE INVENTION A method for bonding a semiconductor crystal to a light-transmitting conductive thin film according to the present invention includes the following steps: a. Providing a first crystal including one semiconductor device; b. Providing a second semiconductor substrate; c. Forming a light-transmitting conductive thin film for forming one light-transmitting conductive thin film on the second semiconductor substrate; d. Sandwiching the second semiconductor substrate and the first crystal tightly so that the light-transmitting conductive thin film intervenes between the second semiconductor substrate and the first crystal; e. The two pieces of crystal sandwiched tightly are heated at high temperature for one step, and the crystals are bonded together.
【００１０】さらに、上記透光導電薄膜は、ヨウ素すず
酸化物（ＩＴＯ）、カドミウムすず酸化物（ＣＴＯ）な
どの材料とする。Further, the transparent conductive thin film is made of a material such as iodine tin oxide (ITO) or cadmium tin oxide (CTO).
【００１１】[0011]
【作用】本発明は一種の半導体結晶結合技術に関し、こ
の技術は一つの透光導電薄膜を半導体結晶ともう一つの
半導体素子を含む結晶の間に置き、その間の接着剤と
し、もって結晶の結合に利用する。この結品結合技術
は、まず半導体素子を含む構造の基板を腐食し、べつに
一つの同じく導電性の基板を取り、並びに一つの透光導
電薄膜をめっきし、さらに半導体素子を含む構造の結晶
と該基板をきつく挟み、高温炉中である時間加熱し基板
を結合する。上述の透光導電薄膜をめっきして有する透
光導電薄膜の基板は例えば透明基板を採用し、ダイオー
ドの発光効率を高め、透光導電薄膜を加えて透明基板が
比較的低温で結合させられるようにする。薄膜層はまた
結合された結晶間の異なる結品格子定数の緩衝層となさ
れ、結晶結合界面の構造を改良する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a semiconductor crystal bonding technique, in which one translucent conductive thin film is placed between a semiconductor crystal and another crystal including a semiconductor element, and an adhesive is used therebetween to bond the crystals. Use for This conjugation technique involves first eroding the substrate of the structure containing the semiconductor element, taking another one of the same conductive substrate, plating one light-transmitting conductive thin film, and forming a crystal of the structure containing the semiconductor element. The substrate is tightly sandwiched and heated in a high-temperature furnace for a certain time to bond the substrates. The transparent conductive thin film substrate having the above-described transparent conductive thin film plated thereon is, for example, a transparent substrate, which enhances the luminous efficiency of the diode and adds the transparent conductive thin film so that the transparent substrate can be bonded at a relatively low temperature. To The thin film layer is also provided as a buffer layer with different crystal lattice constants between the bonded crystals, improving the structure of the crystal bonding interface.
【００１２】[0012]
【実施例】本発明は、一種の結晶結合技術を提供し、図
２に示される従来の発光ダイオードの発光効率を改良
し、その主な目的は、不透明な半導体基板を透明な基板
に変えることにある。基板を容易に結合し、並びに基板
とダブルヘテロ間の異なる結晶格子の界面を緩衝するた
めに、結合される基板上に一層の透光導電薄膜をめっき
し、これを緩衝層とする。The present invention provides a kind of crystal bonding technique to improve the luminous efficiency of the conventional light emitting diode shown in FIG. 2, the main purpose of which is to change an opaque semiconductor substrate into a transparent substrate. It is in. In order to bond the substrates easily as well as to buffer the interface of different crystal lattices between the substrate and the double hetero, a layer of transparent conductive thin film is plated on the substrates to be bonded, which serves as a buffer layer.
【００１３】本発明の技術は一種の簡単で高効率の生産
方式を提供し、もって高い発光効率を有する発光ダイオ
ードを製造する。[0013] The technique of the present invention provides a kind of simple and efficient production method, thereby producing a light emitting diode having high luminous efficiency.
【００１４】一片のＩＴＯ透光薄膜をめっきした負の導
電型ＧａＰ透明基板ともう一片の負の導電型のＧａＰ基
板を、５００℃の下で、ある時間加熱して結合させ完成
したものは、図６中に示されるように、この結合の基板
は非常に良好な電流−電圧線性反応を有する。図７はも
う一つの結合基板の電流−電圧線性反応特性図であり、
この結合基板は７００℃の温度下である時間経過して加
熱結合させ製造される。その電流と電圧も非常によい線
性反応を有する。必ず注意すべきことは、結合界面中の
透光導電薄膜は、良好な透光性と導電性を有さねばなら
ないことで、類似特性を有するその他の材料には、カド
ミウムすず酸化物（ＣＴＯ：Ｃａｄｍｉｕｍ−Ｔｉｎ−
Ｏｘｉｄｅ）薄膜も同様の効果を出すことができる。こ
の一つの基板結合技術の利用により発光ダイオードの光
度を高めることができる。One piece of a negative-conductivity-type GaP transparent substrate plated with an ITO translucent thin film and another piece of a negative-conductivity-type GaP substrate are heated at 500 ° C. for a certain period of time to be bonded to each other. As shown in FIG. 6, the substrate of this bond has a very good current-voltage linear response. FIG. 7 is a current-voltage linear reaction characteristic diagram of another combined substrate,
This bonded substrate is manufactured by heat bonding at a temperature of 700 ° C. for a certain period of time. Its current and voltage also have a very good linear response. It should be noted that the light-transmitting conductive thin film at the bonding interface must have good light-transmitting and conductive properties, and other materials having similar properties include cadmium tin oxide (CTO: Cadmium-Tin-
Oxide) thin film can provide the same effect. The luminous intensity of the light emitting diode can be increased by using this one substrate bonding technique.
【００１５】本発明により製造する発光ダイオードの発
光強度は大体図３に示される従来の発光ダイオードと同
じである。しかし、非常に厚いＡｌＧａＡｓ基板を成長
させる難しさがない。The emission intensity of the light emitting diode manufactured according to the present invention is approximately the same as that of the conventional light emitting diode shown in FIG. However, there is no difficulty in growing a very thick AlGaAs substrate.
【００１６】図２に示すように、従来の発光ダイオード
中のダブルヘテロは一つの正の導電性の基板を有し、基
板上にまず一層の正の導電性のＡｌＧａＡｓを成長し、
その上にさらに一層の不純物のない開、活性ＡｌＧａＡ
ｓ層を成長し、最後に一つの負の導電性のＡｌＧａＡｓ
を成長する。As shown in FIG. 2, the double hetero in the conventional light emitting diode has one positive conductive substrate, on which a layer of positive conductive AlGaAs is first grown,
Open, active AlGaAs without further impurities on it
s layer is grown and finally one negative conductive AlGaAs
To grow.
【００１７】本発明は、図５に示すように、従来のダイ
オードと同様、まず一般の腐食技術を用いて選択式にそ
の基板を予め腐食除去する。新たな基板は同様に正の導
電性を帯びたＧａＰ透明基板５１であり、その表面は一
層の薄いＩＴＯ透光薄膜５２でめっきされる。さらにそ
れと除去基板のダブルヘテロをきつく挟んだ後窒素ガス
或いは水素ガスの高温炉中で、５００℃の温度下で約１
時間加熱し、結晶の接合を完成する。これにより本発明
の構造は、一つの正の導電性を帯びたＧａＰ透明基板５
１、一つのＩＴＯ透光薄膜５２、一つの正の導電性を帯
びたＡｌＧａＡｓ底層５３、一つの不純物無しの活性Ａ
ｌＧａＡｓ中層５４、及び一つの負の導電性を帯びたＡ
ｌＧａＡｓ上層５５を包含する。According to the present invention, as shown in FIG. 5, as in the case of the conventional diode, the substrate is first selectively corroded and removed by using a general corrosive technique. The new substrate is also a GaP transparent substrate 51 having a positive conductivity, and the surface thereof is plated with a thinner ITO light transmitting thin film 52. After tightly sandwiching the double hetero with the substrate to be removed, it is placed in a high temperature furnace of nitrogen gas or hydrogen gas at a temperature of 500 ° C. for about 1 hour.
Heat for an hour to complete crystal bonding. Thus, the structure of the present invention is a single GaP transparent substrate 5 having a positive conductivity.
1. One ITO translucent thin film 52, one positive conductive AlGaAs bottom layer 53, one active impurity-free A
lGaAs middle layer 54, and one negatively conductive A
Includes 1 GaAs overlayer 55.
【００１８】現在ある結晶結合技術に比べ、本発明の技
術は比較的低い温度で、比較的短い時間で結合すること
ができる。Ｚ．Ｌ．Ｌｉａｕが研究した技術では、一般
に８３０℃の温度下で進行し、ほぼ２時間を要する。本
発明では一層の透光導電薄膜を加えた後、結品の結合を
約５００℃中で進行でき、僅かに１時間を要すれば完成
し、不純物の拡散或いは超結晶格子及び量子井戸構造層
と層間元素の相互拡散を免れることができ、素子の劣化
を防ぐ。本発明の技術は、容易に生産が行えるほか、透
光導電薄膜を緩衝層として異なる材料の間の結晶構造の
違いに応じることができる。なぜなら、透光導電薄膜自
身は非結晶層であり、異なる材料の異なる結晶格子定数
及び熱膨張係数は緩衝されて、結合後の結晶も弯曲しに
くく、故にこの技術は比較的大きな結品を結合すること
ができる。Compared to the existing crystal bonding technology, the technology of the present invention can bond at a relatively low temperature in a relatively short time. Z. L. The technique studied by Liau generally proceeds at a temperature of 830 ° C. and takes about 2 hours. In the present invention, after one layer of the light-transmitting conductive thin film is added, the product can be bonded at about 500 ° C. and completed in only one hour, the diffusion of impurities or the supercrystal lattice and the quantum well structure layer are completed. Inter-diffusion of element and interlayer element can be avoided, and deterioration of the element is prevented. The technique of the present invention can be easily manufactured and can respond to a difference in crystal structure between different materials using a light-transmitting conductive thin film as a buffer layer. Because the light-transmitting conductive thin film itself is an amorphous layer, the different crystal lattice constants and thermal expansion coefficients of different materials are buffered, and the crystal after bonding is also less likely to bend. can do.
【００１９】本発明の技術は同様に、図４中のＡｌＧａ
ＩｎＰを含有する従来の発光ダイオードに応用すること
ができ、まず、負の導電性のＧａＡｓ基板を腐食除去
し、更にＩＴＯ透光薄膜をめっきして有する負の導電性
のＧａＰ基板をかわりに結合し、もって図８中の発光ダ
イオードを完成する。ダブルヘテロの材料が異なっても
同様の結合技術を使用することができる。図８の構造は
下から上に、電極接触端８１、一つの負の導電性のＧａ
Ｐ基板８２、一つのＩＴＯ透光導電薄膜８３、一つの負
の導電性のＡｌＧａＩｎＰ底層８４、一つの不純物のな
い活性ＡｌＧａＩｎＰ層８５、及び一つの正の導電性の
ＡｌＧａＩｎＰ上層８６、及び一つの正の導電性のウイ
ンド層８７、もう一つの電極接触端８８を有する。The technique of the present invention similarly applies to AlGa in FIG.
It can be applied to the conventional light emitting diode containing InP. First, the negative conductive GaAs substrate is corroded and removed, and then the negative conductive GaP substrate having the ITO light-transmitting thin film plated is bonded instead. Then, the light emitting diode shown in FIG. 8 is completed. Similar bonding techniques can be used for different double hetero materials. The structure of FIG. 8 is, from bottom to top, electrode contact end 81, one negatively conductive Ga.
P substrate 82, one ITO transparent conductive thin film 83, one negative conductive AlGaInP bottom layer 84, one impurity-free active AlGaInP layer 85, one positive conductive AlGaInP upper layer 86, and one positive conductive AlGaInP upper layer 86. Conductive window layer 87, and another electrode contact end 88.
【００２０】[0020]
【発明の効果】本発明の技術では、まずダブルヘテロに
成長させる基板を伝統的な腐食技術で除去し、その後、
一層の透光導電薄膜を新たな透明基板の上にめっきし、
さらにダブルヘテロの新基板をきつく挟み一体として高
温炉中で１段時間加熱した後、結晶は互いに結合し高効
率の発光ダイオードが完成する。本発明中、透光導電薄
膜は非常に良好な導電性及び透光性を有し、また大部分
の青色から赤色の光を通過させる。またこの薄膜は非結
晶系層とされるため、格子の違いの緩衝作用を有し、故
に２種の異なる材料の間の異なる結晶体構造を互いに結
合させる緩衝層とされる。本発明中の結晶体結合技術は
比較的低温の下で進行され、これにより生産製造が比較
的容易である。一層の緩衝層薄膜を加えたことでダイオ
ードの構造がさらに強固となり、同時にまた有効な発光
効率を有する。According to the technique of the present invention, the substrate to be grown to double hetero is first removed by the traditional corrosion technique, and then,
Plating a layer of translucent conductive thin film on a new transparent substrate,
Furthermore, after heating the new double hetero substrate tightly and integrally in a high-temperature furnace for one step, the crystals are bonded to each other to complete a highly efficient light emitting diode. In the present invention, the light-transmitting conductive thin film has very good conductivity and light-transmitting properties, and transmits most of blue to red light. Further, since this thin film is an amorphous layer, it has a buffering effect due to the difference in lattice, and therefore serves as a buffering layer for bonding different crystalline structures between two different materials to each other. The crystal bonding technique in the present invention proceeds at relatively low temperatures, which makes production and manufacture relatively easy. By adding one buffer layer thin film, the structure of the diode is further strengthened, and at the same time, effective luminous efficiency is obtained.
【図１】従来のＡｌＧａＡｓモノヘテロを有する発光ダ
イオードの断面図である。FIG. 1 is a cross-sectional view of a conventional light emitting diode having an AlGaAs monohetero.
【図２】従来のＡｌＧａＡｓダブルヘテロを有する発光
ダイオードの断面図である。FIG. 2 is a cross-sectional view of a conventional light emitting diode having an AlGaAs double heterostructure.
【図３】従来のＡｌＧａＡｓダブルヘテロ及びＡｌＧａ
Ａｓ基板を有する発光ダイオードの断面図である。FIG. 3 shows a conventional AlGaAs double heterostructure and AlGa
It is sectional drawing of the light emitting diode which has an As substrate.
【図４】従来のＡｌＧａＩｎＰダブルヘテロ及び結合さ
れるＧａＰ基板を有する発光ダイオードの断面図であ
る。FIG. 4 is a cross-sectional view of a conventional light emitting diode having an AlGaInP double heterostructure and a coupled GaP substrate.
【図５】本発明の発光ダイオードであり、一つのＡｌＧ
ａＡｓダブルヘテロ及び一層のＩＴＯ薄膜を有する結合
基板ＧａＰの断面図である。FIG. 5 shows a light emitting diode of the present invention, wherein one AlG
FIG. 4 is a cross-sectional view of a coupling substrate GaP having an aAs double heterostructure and a single ITO thin film.
【図６】本発明の技術をもって２片のＧａＰ基板片をＩ
ＴＯ薄膜で５０℃で結合し一定時間処理した後の電流電
圧特性図である。FIG. 6 shows that two GaP substrate pieces are I
FIG. 4 is a current-voltage characteristic diagram after bonding at 50 ° C. with a TO thin film and processing for a predetermined time.
【図７】本発明の技術をもって２片のＧａＰ基板片をＩ
ＴＯ薄膜で７０℃で結合し一定時間処理した後の電流電
圧特性図である。FIG. 7 shows that two GaP substrate pieces are I
FIG. 4 is a current-voltage characteristic diagram after bonding at 70 ° C. with a TO thin film and processing for a predetermined time.
【図８】本発明の発光ダイオードで、一つのＡｌＧａＩ
ｎＰダブルヘテロ及び一層のＩＴＯ薄膜を有する結合基
板ＧａＰの断面図である。FIG. 8 shows a light emitting diode according to the present invention, wherein one AlGaI
It is sectional drawing of the coupling substrate GaP which has a nP double hetero and one layer of ITO thin film.
５１・・・正の導電性を帯びたＧａＰ透明基板 ５２・・・ＩＴＯ透光薄膜 ５３・・・正の導電性を帯びたＡｌＧａＡｓ底層 ５４・・・活性ＡｌＧａＡｓ中層 ５５・・・負の導電性を帯びたＡｌＧａＡｓ上層 ８１・・・電極接触端 ８２・・・負の導電性のＧａＰ基板 ８３・・・ＩＴＯ透光導電薄膜 ８４・・・負の導電性のＡｌＧａＩｎＰ底層 ８５・・・活性ＡｌＧａＩｎＰ層 ８６・・・正の導電性のＡｌＧａＩｎＰ上層 ８７・・・正の導電性のウインド層 ８８・・・電極接触端 51: Positive conductive GaP transparent substrate 52: ITO translucent thin film 53: Positive conductive AlGaAs bottom layer 54: Active AlGaAs middle layer 55: Negative conductivity AlGaAs upper layer 81 with electrode contact end 82 Negative conductive GaP substrate 83 ITO light transmitting conductive thin film 84 Negative conductive AlGaInP bottom layer 85 Active AlGaInP layer 86 ... positive conductive AlGaInP upper layer 87 ... positive conductive window layer 88 ... electrode contact end
Claims (2)
準備する； ｂ．第２半導体基板を準備する； ｃ．該第２半導体基板上に一層の透光導電薄膜を形成す
る透光導電薄膜を形成する； ｄ．該第２半導体基板と第１結晶をきつく挟み、透光導
電薄膜が第２半導体基板と第１結晶の間を介するように
する； ｅ．きつく挟んだ２片の結晶を高温中で一段時間加熱
し、もって結晶を結合する； 以上のステップを含む、透光導電薄膜応用の半導体結晶
結合方法。1. A method comprising: a. Providing a first crystal including one semiconductor device; b. Providing a second semiconductor substrate; c. Forming a light-transmitting conductive thin film for forming one light-transmitting conductive thin film on the second semiconductor substrate; d. Sandwiching the second semiconductor substrate and the first crystal tightly so that the light-transmitting conductive thin film intervenes between the second semiconductor substrate and the first crystal; e. The two pieces of tightly sandwiched crystals are heated at a high temperature for one step, thereby bonding the crystals. A method of bonding a semiconductor crystal using a light transmitting conductive thin film, including the above steps.
ＴＯ）、カドミウムすず酸化物（ＣＴＯ）などの材料と
する、請求項１に記載の透光導電薄膜応用の半導体結晶
結合方法。2. The light-transmitting conductive thin film comprises an iodine tin oxide (I)
2. The method according to claim 1, wherein the material is a material such as TO) or cadmium tin oxide (CTO).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29777794A JP2588849B2 (en) | 1994-10-26 | 1994-10-26 | Semiconductor crystal bonding method applied to light transmitting conductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29777794A JP2588849B2 (en) | 1994-10-26 | 1994-10-26 | Semiconductor crystal bonding method applied to light transmitting conductive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08130326A true JPH08130326A (en) | 1996-05-21 |
| JP2588849B2 JP2588849B2 (en) | 1997-03-12 |
Family
ID=17851049
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29777794A Expired - Lifetime JP2588849B2 (en) | 1994-10-26 | 1994-10-26 | Semiconductor crystal bonding method applied to light transmitting conductive thin film |
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| Country | Link |
|---|---|
| JP (1) | JP2588849B2 (en) |
Cited By (4)
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|---|---|---|---|---|
| JP2009218312A (en) * | 2008-03-10 | 2009-09-24 | Toshiba Corp | Semiconductor light emitting device and method of manufacturing the same |
| US7732831B2 (en) | 2004-03-29 | 2010-06-08 | Showa Denko K.K. | Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2588849B2 (en) | 1997-03-12 |
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