JPH08113772A - Silicon wafer abrasive composition and composition for silicon wafer abrasive - Google Patents
Silicon wafer abrasive composition and composition for silicon wafer abrasiveInfo
- Publication number
- JPH08113772A JPH08113772A JP25247494A JP25247494A JPH08113772A JP H08113772 A JPH08113772 A JP H08113772A JP 25247494 A JP25247494 A JP 25247494A JP 25247494 A JP25247494 A JP 25247494A JP H08113772 A JPH08113772 A JP H08113772A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- silica
- silicon wafer
- solid content
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体の製造工程で使
用されるシリコンウェハのための研磨剤組成物及び研磨
剤用組成物に関する。半導体シリコンウェハの研磨工程
には、ラッピング工程を経て目的とする表面精度に仕上
げるポリッシング工程があり、ポリッシング工程は、粗
研磨と称される１次ポリッシングと精密研磨と称される
ファイナルポリッシングに区分けされ、場合により１次
ポリッシング工程を更に２工程に分け、１次、２次ポリ
ッシング工程と称されている。本発明は詳しくは、前述
の１次ポリッシング工程又は１次ポリッシング工程を更
に２工程に分けた１次、２次ポリッシング工程（以下、
これらを総称して単に１次ポリッシング工程と言う）に
そのまま、若しくは希釈して使用することのできる研磨
剤組成物及び研磨剤用組成物に関する。TECHNICAL FIELD The present invention relates to an abrasive composition and an abrasive composition for a silicon wafer used in a semiconductor manufacturing process. The polishing process of a semiconductor silicon wafer includes a polishing process for finishing to a desired surface accuracy through a lapping process. The polishing process is classified into primary polishing called rough polishing and final polishing called precision polishing. In some cases, the primary polishing process is further divided into two processes, which are referred to as primary and secondary polishing processes. More specifically, the present invention specifically describes a primary polishing step or a primary polishing step in which the primary polishing step is further divided into two steps.
These are collectively referred to simply as a primary polishing step), or an abrasive composition and an abrasive composition that can be used as diluted.
【０００２】[0002]
【従来の技術】１次ポリッシング工程は、回転テーブル
上で回転する研磨布（ポリッシャー）と、研磨ブロック
に貼り付けたラッピングシリコンウェハを、適切なる圧
力で接触させる際に、コロイダルシリカ研磨剤を、研磨
布とシリコンウェハの接触面に添加することにより、研
磨剤とシリコンウェハがメカノケミカル作用を起こし進
行する。2. Description of the Related Art In a primary polishing process, when a polishing cloth (polisher) rotating on a rotary table and a lapping silicon wafer attached to a polishing block are brought into contact with each other at an appropriate pressure, a colloidal silica abrasive is used. When added to the contact surface between the polishing cloth and the silicon wafer, the polishing agent and the silicon wafer cause a mechanochemical action to proceed.
【０００３】[0003]
【発明が解決しようとする課題】例えば、コロイダルシ
リカを必須の成分とするシリコンウェハ用研磨剤は、米
国特許第3,170,273号明細書、同第4,169,337号明細書、
特開昭58-225177号公報、同62-30333号公報等があり、
第４級アンモニウム、ピペラジン等を添加し、研磨効率
を高める方法が開示されている。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention For example, a polishing agent for silicon wafers containing colloidal silica as an essential component is described in US Pat. No. 3,170,273, and No. 4,169,337.
JP-A-58-225177, JP-A-62-30333 and the like,
A method of adding a quaternary ammonium, piperazine or the like to enhance polishing efficiency is disclosed.
【０００４】しかし、これら従来の方法では、研磨効率
を上げ且つ良好なウェハの表面精度に仕上げることは難
しく、近年の８インチ等大口径シリコンウェハに対する
研磨効率には充分では無く、更に研磨後のシリコンウェ
ハの表面精度は満足されるレベルに至っていなかった。However, with these conventional methods, it is difficult to increase the polishing efficiency and finish the surface of the wafer with good precision, and it is not sufficient for the polishing efficiency for a large-diameter silicon wafer such as 8 inches in recent years. The surface accuracy of the silicon wafer has not reached a satisfactory level.
【０００５】従って、本発明の目的は、優れた研磨効率
と表面精度を与える、良好なシリコンウェハ研磨剤組成
物を提供することにある。Accordingly, it is an object of the present invention to provide a good silicon wafer polishing composition which provides excellent polishing efficiency and surface accuracy.
【０００６】又、本発明の他の目的は、優れた研磨効率
と表面精度を与える、良好なシリコンウェハ研磨剤を得
ることのできるシリコンウェハ研磨剤用組成物を提供す
ることにある。Another object of the present invention is to provide a composition for a silicon wafer polishing agent, which gives excellent polishing efficiency and surface accuracy and is capable of obtaining a good silicon wafer polishing agent.
【０００７】[0007]
【課題を解決するための手段】即ち、本発明のシリコン
ウェハ研磨剤組成物は、シリカと、このシリカ固形分に
対して５〜８０重量％の水溶性有機アミン、このシリカ
固形分に対して０.０５〜１％重量％のポリビニルアル
コールのシリル化変成物、及び残部水が必須の成分とし
て均一に分散しており、組成物全体の固形分濃度２〜２
０重量％、ｐＨ８〜１３、分散状態でのシリカ平均粒子
径７〜１００ｎｍであることを特徴とする。That is, the silicon wafer polishing composition of the present invention comprises silica, 5 to 80% by weight of a water-soluble organic amine based on the silica solid content, and the silica solid content. 0.05 to 1% by weight of a silylated modification product of polyvinyl alcohol and the balance water are uniformly dispersed as essential components, and the solid content concentration of the entire composition is 2 to 2
It is characterized by having 0% by weight, pH 8 to 13, and a silica average particle diameter in a dispersed state of 7 to 100 nm.
【０００８】又、本発明のシリコンウェハ研磨剤用組成
物は、シリカと、このシリカ固形分に対して５〜８０重
量％の水溶性有機アミン、このシリカ固形分に対して
０.０５〜１％重量％のポリビニルアルコールのシリル
化変成物、及び残部水が必須の成分として均一に分散し
ており、組成物全体の固形分濃度５〜８０重量％、ｐＨ
８〜１３、分散状態でのシリカ平均粒子径７〜１００ｎ
ｍであることを特徴とする。Further, the composition for a silicon wafer polishing composition of the present invention comprises silica, 5 to 80% by weight of a water-soluble organic amine based on the silica solid content, and 0.05 to 1 based on the silica solid content. % Wt% of the silylated modification product of polyvinyl alcohol and the balance water are uniformly dispersed as essential components, the solid content concentration of the entire composition is 5 to 80 wt%, and the pH is
8 to 13, silica average particle diameter in dispersed state 7 to 100 n
It is characterized by being m.
【０００９】なお、これらに使用するポリビニルアルコ
ールのシリル化変性物は、式(１)The silylation-modified products of polyvinyl alcohol used in these are represented by the formula (1)
【化５】 の構造単位が８０〜９９.９重量％、及び式(２)Embedded image 80% to 99.9% by weight of the structural unit of the formula (2)
【化６】 （式中、ｎは０、１又は２であり、Ｒは水素、アリール
基、シクロアルキル基、アリールアルキル基又は炭素原
子数１〜１８の直鎖飽和アルキル基であり、前記ｎが２
のときは同一でも異なっていてもよく、ＸはＨ、アルカ
リ金属又はＮＨ4であり、前記ｎが０又は１のときは同
一でも異なっていてもよい）の構造単位が０.１〜２０
重量％からなるものであることが好ましい。[Chemical 6] (In the formula, n is 0, 1 or 2, R is hydrogen, an aryl group, a cycloalkyl group, an arylalkyl group or a linear saturated alkyl group having 1 to 18 carbon atoms, and n is 2
When X is H, an alkali metal or NH 4 , and when n is 0 or 1, they may be the same or different) and the structural unit is 0.1 to 20.
It is preferably composed of weight%.
【００１０】以下、本発明のシリコンウェハ研磨剤組成
物及び研磨剤用組成物について詳述する。本発明のシリ
コンウェハ研磨剤組成物は、組成物全体の固形分濃度が
２〜２０重量％の範囲内にある。該固形分濃度が２重量
％未満であると研磨効率が悪く実用性に乏しく、２０重
量％を超えるとシリコンウェハの表面精度を充分得るこ
とはできなくなるために好ましくない。The silicon wafer polishing composition and polishing composition of the present invention will be described in detail below. In the silicon wafer polishing composition of the present invention, the solid content concentration of the entire composition is within the range of 2 to 20% by weight. If the solid content concentration is less than 2% by weight, the polishing efficiency is poor and the practicality is poor, and if it exceeds 20% by weight, the surface accuracy of the silicon wafer cannot be sufficiently obtained, which is not preferable.
【００１１】また、本発明のシリコンウェハ研磨剤組成
物は、ｐＨが８〜１３、好ましくは９〜１２の範囲であ
る。ｐＨが上記未満であると研磨効率が悪く実用性に乏
しく、ｐＨが上記を超えるとシリコンウェハの表面精度
を充分得ることはできなくなるために好ましくない。な
お、ｐＨの調整は任意の公知アルカリ剤（例えば、Ｎａ
ＯＨ、ＫＯＨ、アンモニア、有機アミン等）を使用して
行うことができるが、後述のシリカ原料としてのアルカ
リ性コロイダルシリカや、水溶性有機アミンを使用する
ことでもｐＨは上昇するので、これとあわせて適宜調整
すれば良い。The silicon wafer polishing composition of the present invention has a pH of 8 to 13, preferably 9 to 12. If the pH is less than the above, the polishing efficiency is poor and the practicality is poor, and if the pH exceeds the above, the surface accuracy of the silicon wafer cannot be sufficiently obtained, which is not preferable. The pH can be adjusted by any known alkaline agent (for example, Na.
OH, KOH, ammonia, organic amines, etc.), but the pH is also increased by using alkaline colloidal silica as a silica raw material described later or water-soluble organic amines. It may be adjusted appropriately.
【００１２】更に、本発明のシリコンウェハ研磨剤組成
物は、組成物中の分散状態でのシリカ平均粒子径が７〜
１００ｎｍ、好ましくは１０〜５０ｎｍの範囲内にあ
る。平均粒子径上記未満であると、研磨剤組成物の保存
安定性が悪化し、上記を超えると、放置しておくと沈澱
し、使用上再分散処理をする必要が生じるので作業性が
悪化するために好ましくない。なお、本発明のシリコン
ウェハ研磨剤組成物中の分散状態でのシリカは平均粒子
径が上記範囲内であれば良く、粒子径分布の形態によっ
て個々のシリカの粒子径が上記範囲を超えることは差し
支えない。Further, the silicon wafer polishing composition of the present invention has an average silica particle diameter of 7 to 7 in a dispersed state in the composition.
It is in the range of 100 nm, preferably 10 to 50 nm. If the average particle diameter is less than the above, the storage stability of the abrasive composition is deteriorated, and if it exceeds the above, precipitation occurs when left standing and it becomes necessary to perform a redispersion treatment for use, which deteriorates workability. Not preferred because of The silica in the dispersed state in the silicon wafer polishing composition of the present invention may have an average particle size within the above range, and the particle size of individual silica may exceed the above range depending on the shape of the particle size distribution. It doesn't matter.
【００１３】本発明に用いるシリカは、本発明のシリコ
ンウェハ研磨剤組成物中の分散状態でのシリカ平均粒子
径が上記の通りとなり得るものであればどのようなもの
でも使用することができ、例えば、シリカ微粉末であっ
てもよいが、水ガラスから製造される水性コロイダルシ
リカ（シリカゾル）液を使用するのが分散安定性の点か
ら好ましい。又、水性コロイダルシリカ液がアルカリ性
のものであると本発明のシリコンウェハ研磨剤組成物と
しての上記ｐＨ条件に調整し易いので好ましく、このよ
うなアルカリ性コロイダルシルカは、一般に市販されて
いる製品を使用することもできる。例えばアデライトＡ
Ｔ−３０Ｓ〔旭電化工業(株)社製：平均粒子径８.５±
１.５ｎｍ、シリカ固形分３０重量％〕、アデライトＡ
Ｔ−３０〔旭電化工業(株)社製：平均粒子径１２.５±
２.５ｎｍ、シリカ固形分３０重量％〕、アデライトＡ
Ｔ−４０〔旭電化工業(株)社製：平均粒子径１７.５±
２.５ｎｍ、シリカ固形分４０重量％〕、アデライトＡ
Ｔ−５０〔旭電化工業(株)社製：平均粒子径２５±５ｎ
ｍ、シリカ固形分５０重量％〕、アデライトＢＴ−５９
〔旭電化工業(株)社製：平均粒子径８５±１５ｎｍ、シ
リカ固形分５０重量％〕等が使用できる。As the silica used in the present invention, any silica can be used as long as the average particle size of silica in the dispersed state in the silicon wafer abrasive composition of the present invention can be as described above. For example, silica fine powder may be used, but it is preferable to use an aqueous colloidal silica (silica sol) liquid produced from water glass from the viewpoint of dispersion stability. Further, it is preferable that the aqueous colloidal silica liquid is an alkaline one because it is easy to adjust the pH conditions as the silicon wafer polishing composition of the present invention, and such an alkaline colloidal silka is a commercially available product. You can also do it. For example, Adelite A
T-30S [Asahi Denka Kogyo KK: average particle size 8.5 ±
1.5 nm, silica solid content 30% by weight], Adelite A
T-30 [Asahi Denka Kogyo KK: average particle size 12.5 ±
2.5 nm, silica solid content 30% by weight], Adelite A
T-40 [Asahi Denka Kogyo KK: average particle size 17.5 ±
2.5 nm, silica solid content 40% by weight], Adelite A
T-50 [manufactured by Asahi Denka Co., Ltd .: average particle size 25 ± 5n
m, silica solid content 50% by weight], Adelite BT-59
[Asahi Denka Kogyo KK: average particle size 85 ± 15 nm, silica solid content 50% by weight] and the like can be used.
【００１４】上記シリカは微粉末シリカ形態のものを使
用するにしても、水性コロイダルシリカ形態のものを使
用するにしても、本発明のシリコンウェハ研磨剤組成物
中の分散状態でのシリカ平均粒子径が上記範囲内であれ
ばよいので、原料としてのシリカ粒子径は上記範囲外で
あっても差し支えなく、例えば微粉末シリカは水に分散
させると粒子径が変化するので原料としての粒子径は上
記範囲外であることがあるが、水性コロイダルシリカ中
のシリカは既に水に分散しているので粒子径の変化はほ
とんど無い。Regardless of whether the silica is in the form of finely divided silica or in the form of aqueous colloidal silica, silica average particles in a dispersed state in the silicon wafer abrasive composition of the present invention are used. Since the diameter may be within the above range, the silica particle diameter as a raw material may be outside the above range, and for example, fine powder silica has a particle diameter as a raw material because the particle diameter changes when dispersed in water. Although it may be out of the above range, since the silica in the aqueous colloidal silica is already dispersed in water, the particle diameter hardly changes.
【００１５】本発明で用いる水溶性有機アミンは、水に
溶解してアルカリ性を呈する有機アミンであればどのよ
うなものでも良いが、好ましくは窒素原子数が１〜６の
直鎖状、分岐鎖状又は、環状のアミンであることが良
い。具体的には、例えば、Ｎ，Ｎ−ジエチルエタノール
アミン、アミノエチルエタノールアミン、モノエタノー
ルアミン、モノエチルアミン、モノメチルアミン、ヒド
ラジン、エチレンジアミン、ジエチレントリアミン、ベ
ンジルアミン、１−アミノエチルピペラジン等を例示す
ることができる。The water-soluble organic amine used in the present invention may be any organic amine as long as it dissolves in water and exhibits alkalinity, but is preferably a linear or branched chain having 1 to 6 nitrogen atoms. It is preferable that the amine is a ring-shaped or cyclic amine. Specific examples include N, N-diethylethanolamine, aminoethylethanolamine, monoethanolamine, monoethylamine, monomethylamine, hydrazine, ethylenediamine, diethylenetriamine, benzylamine, and 1-aminoethylpiperazine. it can.
【００１６】本発明のシリコンウェハ研磨剤組成物の安
定性の点で、上記水溶性有機アミンとして更に好ましい
のはアルカノールアミン及びアルキルアミンであり、特
に好ましいのはアミノエチルエタノールアミン、モノエ
タノールアミン、モノメチルアミン、ヒドラジン、エチ
レンジアミン、ジエチレントリアミン等である。水溶性
有機アミンの添加量はシリカ固形分に対して５〜８０重
量％、好ましくは１０〜５０重量％である。水溶性有機
アミンの添加量が上記量よりも少ないと研磨量が少なく
なり効率が悪く、上記量を超えて添加しても研磨効率の
向上は期待できず、かえって仕上げられたシリコンウェ
ハの表面精度は悪くなり、組成物の安定性も急速に悪化
するので不適当である。From the viewpoint of stability of the silicon wafer polishing composition of the present invention, the water-soluble organic amines are more preferably alkanolamines and alkylamines, and particularly preferably aminoethylethanolamine, monoethanolamine, Examples include monomethylamine, hydrazine, ethylenediamine and diethylenetriamine. The amount of the water-soluble organic amine added is 5 to 80% by weight, preferably 10 to 50% by weight, based on the silica solid content. If the addition amount of the water-soluble organic amine is less than the above amount, the polishing amount becomes small and the efficiency is poor, and even if it is added in excess of the above amount, the improvement of the polishing efficiency cannot be expected, and the surface accuracy of the finished silicon wafer is rather high. Is not suitable because it deteriorates and the stability of the composition rapidly deteriorates.
【００１７】本発明に用いるポリビニルアルコールのシ
リル化変成物は特に限定されず、ポリビニルアルコール
に炭化水素で置換又は非置換のＳｉ−Ｏ結合を有する珪
素含有基を導入した構造のものであれば良いが、好まし
くは、式(１)The silylated modification product of polyvinyl alcohol used in the present invention is not particularly limited as long as it has a structure in which a silicon-containing group having a Si-O bond substituted or unsubstituted with a hydrocarbon is introduced into polyvinyl alcohol. However, preferably, the formula (1)
【化７】 の構造単位が８０〜９９.９重量％、及び式(２)[Chemical 7] 80% to 99.9% by weight of the structural unit of the formula (2)
【化８】 （式中、ｎは０、１又は２であり、Ｒは水素、アリール
基、シクロアルキル基、アリールアルキル基又は炭素原
子数１〜１８の直鎖飽和アルキル基であり、前記ｎが２
のときは同一でも異なっていてもよく、ＸはＨ、アルカ
リ金属又はＮＨ4であり、前記ｎが０又は１のときは同
一でも異なっていてもよい）の構造単位が０.１〜２０
重量％、からなるものである。Embedded image (In the formula, n is 0, 1 or 2, R is hydrogen, an aryl group, a cycloalkyl group, an arylalkyl group or a linear saturated alkyl group having 1 to 18 carbon atoms, and n is 2
When X is H, an alkali metal or NH 4 , and when n is 0 or 1, they may be the same or different) and the structural unit is 0.1 to 20.
% By weight.
【００１８】上述のようなポリビニルアルコールのシリ
ル化変成物の分子量は５,０００〜１５０,０００、好ま
しくは２０,０００〜１００,０００のものが良い。The molecular weight of the silylated modification of polyvinyl alcohol as described above is 5,000 to 150,000, preferably 20,000 to 100,000.
【００１９】上述のようなポリビニルアルコールのシリ
ル化変成物は公知の方法で製造することができ、例えば
特公昭59−45682号公報に記載のように、酢酸ビニルと
ビニルアルコキシシランを共重合させ、アルカリで加水
分解し、苛性アルカリ水又はアンモニア水中に溶解さ
せ、又は更に（ＸがＨの場合）生成物を酸性にして得る
ことができる。この場合Ｘが完全にＨになっていなくて
もよく、ポリビニルアルコールのシリル化変成物の分子
中における複数の式（２）で表される構造単位中のＸが
異なっていても良い。The silylated modification of polyvinyl alcohol as described above can be produced by a known method. For example, as described in JP-B-59-45682, vinyl acetate and vinylalkoxysilane are copolymerized, It can be obtained by hydrolysis with an alkali, dissolution in caustic or aqueous ammonia, or additionally (when X is H) by acidifying the product. In this case, X does not have to be completely H, and X in a plurality of structural units represented by formula (2) in the molecule of the silylated modification of polyvinyl alcohol may be different.
【００２０】前記ビニルアルコキシシランとしては例え
ばビニルトリアルコキシシラン、例えばビニルトリメト
キシシラン、ビニルトリエトキシシラン、ビニル−トリ
ス−（β−メトキシエトキシ）−シラン、ビニルジアル
コキシシラン、例えばビニルイソブチルジメトキシシラ
ン、ビニルモノクロルジメトキシシラン等を好ましいも
のとして挙げることができる。又、ビニルフェニルジメ
トキシシラン、ビニルシクロヘキシルジメトキシシラ
ン、ビニルノニルフェニルジメトキシシラン、ビニルラ
ウリルジメトキシシラン、ビニルジクロルメトキシシラ
ン、ビニルジメチルエトキシシラン、ビニルジフェニル
メトキシシラン、ビニルジシクロヘキシルメトキシシラ
ン、ビニルジノニルフェニルメトキシシラン、ジビニル
ラウリルメトキシシランも挙げることができる。Examples of the vinylalkoxysilane include vinyltrialkoxysilanes such as vinyltrimethoxysilane, vinyltriethoxysilane, vinyl-tris- (β-methoxyethoxy) -silane, vinyldialkoxysilanes such as vinylisobutyldimethoxysilane, and the like. Vinyl monochlorodimethoxysilane and the like can be mentioned as preferable ones. Also, vinylphenyldimethoxysilane, vinylcyclohexyldimethoxysilane, vinylnonylphenyldimethoxysilane, vinyllauryldimethoxysilane, vinyldichloromethoxysilane, vinyldimethylethoxysilane, vinyldiphenylmethoxysilane, vinyldicyclohexylmethoxysilane, vinyldinonylphenylmethoxysilane. Divinyl lauryl methoxysilane can also be mentioned.
【００２１】本発明において、ポリビニルアルコールの
シリル化変成物は市販の製品も使用することができ、例
えば、(株)クラレ社製Ｒ−１１３０（商品名）、(株)ク
ラレ社製Ｒ−２１０５（商品名）、(株)クラレ社製Ｒ−
２１３０（商品名）などを挙げることができる。In the present invention, as the silylated modification product of polyvinyl alcohol, a commercially available product can be used. For example, R-1130 (trade name) manufactured by Kuraray Co., Ltd., R-2105 manufactured by Kuraray Co., Ltd. (Trade name), R-made by Kuraray Co., Ltd.
2130 (trade name) and the like can be mentioned.
【００２２】ポリビニルアルコールのシリル化変成物の
添加量は、シリカ固形分に対して０.０５〜１重量％、
好ましくは０.１〜０.５重量％が良い。ポリビニルアル
コールのシリル化変成物の添加量が上記量よりも少ない
と研磨ウェハの表面精度に効果が無く、上記量を超えて
添加すると研磨量が低下し、又得られた研磨剤溶液が使
用時泡立ち不敵当である。なお、ポリビニルアルコール
のシリル化変成物は、本発明の組成物に溶解した形態で
存在するか、若しくは分散した形態で存在するすること
もある。The addition amount of the silylated modification of polyvinyl alcohol is 0.05 to 1% by weight based on the silica solid content,
It is preferably 0.1 to 0.5% by weight. If the amount of the silylation-modified poly (vinyl alcohol) added is less than the above amount, it has no effect on the surface accuracy of the polished wafer, and if it is added in excess of the above amount, the polishing amount decreases, and when the obtained polishing agent solution is used. Foaming is invincible. The silylated modification product of polyvinyl alcohol may be present in a dissolved form or a dispersed form in the composition of the present invention.
【００２３】本発明のシリコンウェハ研磨剤用組成物
は、水で組成物全体の固形分濃度を２〜２０重量％に希
釈して上記シリコンウェハ研磨剤組成物を得るためのも
のである。従って、組成物全体の固形分濃度が５〜８０
重量％、好ましくは１０〜７０重量％、更に好ましくは
２１〜６０重量％である以外、各成分等の詳細は上記シ
リコンウェハ研磨剤組成物と同様である。本発明のシリ
コンウェハ研磨剤用組成物は、組成物全体の固形分濃度
が５重量％未満であると上記シリコンウェハ研磨剤組成
物を得る為の濃縮物としての効率か悪く実用的でなく、
８０重量％を超えると分散安定性が悪く、やはり実用性
に乏しくなるのでこの範囲でなければない。The composition for a silicon wafer polishing agent of the present invention is for obtaining the above-mentioned silicon wafer polishing agent composition by diluting the solid content concentration of the entire composition to 2 to 20% by weight with water. Therefore, the solid content concentration of the entire composition is 5 to 80.
The details of each component and the like are the same as those of the above-mentioned silicon wafer polishing composition, except that the content is preferably 10 to 70% by weight, more preferably 21 to 60% by weight. The composition for a silicon wafer polishing agent of the present invention is not practical as the concentrate for obtaining the above-mentioned silicon wafer polishing agent composition is poor in efficiency when the solid content concentration of the entire composition is less than 5% by weight,
If it exceeds 80% by weight, the dispersion stability will be poor and the practicality will be poor.
【００２４】上述のような構成を有する本発明のシリコ
ンウェハ研磨剤組成物は、研磨布とシリコンウェハの接
触面に添加して使用することができる。The silicon wafer polishing composition of the present invention having the above-mentioned constitution can be used by adding it to the contact surface between the polishing cloth and the silicon wafer.
【００２５】[0025]
【実施例】以下に実施例を挙げて本発明を更に説明する
が、本発明はこれらに限定されるものではない。 実施例１ 平均粒子径２５ｎｍ、シリカ固形分３０重量％のアルカ
リ性コロイダルシリカ液〔アデライトＡＴ−３０Ｂ：旭
電化工業(株)社製〕をシリカ固形分５重量％に水で希釈
した。この液１０００重量部に水溶性有機アミンとして
モノエタノールアミンを２０重量部（シリカ固形分に対
して４０重量％）及びポリビニルアルコールのシリル化
変成物として(株)クラレ社製Ｒ−１１３０（商品名：分
子量75,000）を０.１重量部（シリカ固形分に対して０.
２重量％）の割合で添加し、均一になるまで充分に攪拌
して本発明のシリコンウェハ研磨剤組成物（組成物全体
の固形分濃度６.９重量％、ｐＨ１０.９、分散状態での
シリカ平均粒子径２５ｎｍ）とした。The present invention will be further described below with reference to examples, but the present invention is not limited thereto. Example 1 An alkaline colloidal silica solution [Adelite AT-30B: manufactured by Asahi Denka Co., Ltd.] having an average particle size of 25 nm and a silica solid content of 30% by weight was diluted with water to a silica solid content of 5% by weight. To 1000 parts by weight of this solution, 20 parts by weight of monoethanolamine as a water-soluble organic amine (40% by weight with respect to the solid content of silica) and as a silylated modification product of polyvinyl alcohol, R-1130 (trade name) manufactured by Kuraray Co., Ltd. : Molecular weight 75,000) 0.1 part by weight (silver solid content 0.1.
2% by weight) and sufficiently stirred until it becomes uniform, and the silicon wafer polishing composition of the present invention (solid content concentration of the entire composition is 6.9% by weight, pH 10.9, dispersion state). The average particle size of silica was 25 nm).
【００２６】この研磨剤組成物を使用して以下の条件で
シリコンウェハを研磨した。 ポリッシングマシン：ラップマスター社製ＬＰＨ−１５
改良型 ポリッシング盤直径：１５インチ ポリッシング盤回転数：９０ｒｐｍ シリコンウェハ：直径４インチ（１００）Ｐ型ＣＺ法 研磨圧力：４００ｇ／ｃｍ2 研磨温度：４０℃ 研磨剤供給量：８リットル／時間 研磨時間：２０分 研磨枚数： ５枚Using this abrasive composition, a silicon wafer was polished under the following conditions. Polishing machine: LPH-15 made by Lapmaster
Improved polishing machine Diameter: 15 inches Polishing machine rotation speed: 90 rpm Silicon wafer: Diameter 4 inches (100) P-type CZ method Polishing pressure: 400 g / cm 2 Polishing temperature: 40 ° C. Polishing agent supply: 8 liters / hour Polishing time : 20 minutes Polishing number: 5
【００２７】研磨後のシリコンウェハの研磨除去量（シ
リコンウェハの厚みの減少量）を測定し、研磨効率と
し、又、表面状態はランクテイラーホブソン社製微小領
域測定装置（Talystep）で表面精度（JIS B 0601）を測
定した。研磨除去量は６２μ、表面精度Ｒmax＝４.０ｎ
ｍであり、良好であった。The polishing removal amount (reduction amount of the thickness of the silicon wafer) of the silicon wafer after polishing is measured to obtain the polishing efficiency, and the surface condition is measured by a fine area measuring device (Talystep) manufactured by Rank Taylor Hobson. JIS B 0601) was measured. Polishing removal amount is 62μ, surface accuracy R max = 4.0n
m was good.
【００２８】実施例２ 平均粒子径１２ｎｍ、シリカ固形分３０重量％のアルカ
リ性コロイダルシリカ溶液〔アデライトＡＴ−３０：旭
電化工業(株)製〕をシリカ固形分５重量％に水で希釈し
た。この液１０００重量部に水溶性有機アミンとしてア
ミノエチルエタノールアミンを１５重量部（シリカ固形
分に対して３０重量％）及びポリビニルアルコールのシ
リル化変成物として(株)クラレ社製Ｒ−１１３０（商品
名）を０.２重量％（シリカ固形分に対して０.４重量
％）の割合で添加し、均一になるまで充分に攪拌して本
発明のシリコンウェハ研磨剤組成物（組成物全体の固形
分濃度６.４重量％、ｐＨ１０.６、分散状態でのシリカ
平均粒子径１２ｎｍ）とした他は実施例１と同様に試験
した。この試験の結果、研磨除去量は６５μ、表面精度
Ｒmax＝４.５ｎｍであり、良好であった。Example 2 An alkaline colloidal silica solution [Adelite AT-30: Asahi Denka Kogyo KK] having an average particle diameter of 12 nm and a silica solid content of 30% by weight was diluted with water to a silica solid content of 5% by weight. To 1000 parts by weight of this liquid, 15 parts by weight of aminoethylethanolamine as a water-soluble organic amine (30% by weight with respect to the solid content of silica) and as a silylation modification product of polyvinyl alcohol, R-1130 manufactured by Kuraray Co., Ltd. 0.2% by weight (0.4% by weight based on the silica solid content), and the mixture is sufficiently stirred until it becomes uniform, and the silicon wafer polishing composition of the present invention (of the entire composition) is added. The same test as in Example 1 was conducted except that the solid content concentration was 6.4% by weight, the pH was 10.6, and the average particle diameter of silica in the dispersed state was 12 nm. As a result of this test, the polishing removal amount was 65 μ, and the surface accuracy R max = 4.5 nm, which was good.
【００２９】実施例３ 平均粒子径４５ｎｍ、シリカ固形分５０重量％のアルカ
リ性コロイダルシリカ液〔アデライトＢＴ−５５：旭電
化工業(株)製〕をシリカ固形分５重量％に水で希釈し
た。この液１０００重量部に水溶性有機アミンとしてエ
チレンジアミンを３５重量部（シリカ形分に対して７０
重量％）及びポリビニルアルコールのシリル化変成物と
して(株)クラレ社製Ｒ−１１３０（商品名）を０.３重
量部（シリカ固形分に対して０.６重量％）の割合で添
加し、均一になるまで充分に攪拌して本発明のシリコン
ウェハ研磨剤組成物（組成物全体の固形分濃度６.２重
量％、ｐＨ１１.６、分散状態でのシリカ平均粒子径４
５ｎｍ）とした他は実施例１と同様に試験した。この試
験の結果、研磨除去量は８０μ、表面精度Ｒmax＝３.５
ｎｍであり、良好であった。Example 3 An alkaline colloidal silica solution (Adelite BT-55: Asahi Denka Kogyo KK) having an average particle size of 45 nm and a silica solid content of 50% by weight was diluted with water to a silica solid content of 5% by weight. To 1000 parts by weight of this solution, 35 parts by weight of ethylenediamine as a water-soluble organic amine (70
%) And R-1130 (trade name) manufactured by Kuraray Co., Ltd. as a silylated modification product of polyvinyl alcohol at a ratio of 0.3 parts by weight (0.6% by weight based on the silica solid content), The silicon wafer polishing composition of the present invention is thoroughly stirred until it becomes uniform (solid content concentration of the whole composition is 6.2% by weight, pH is 11.6, silica average particle diameter in dispersed state is 4).
5 nm), and the same test as in Example 1. As a result of this test, the polishing removal amount is 80 μ, and the surface accuracy R max = 3.5.
nm, which was good.
【００３０】比較例１ 平均粒子径１２ｎｍ、シリカ固形分３０重量％のアルカ
リ性コロイダルシリカ液〔アデライトＡＴ−３０：旭電
化工業(株)製〕をシリカ固形分５重量％に水で希釈し
た。この液１０００重量部に水溶性有機アミンとしてジ
エチレントリアミンを３０重量部（シリカ固形分に対し
て６０重量％）の割合で添加し、均一になるまで充分に
攪拌して研磨剤組成物とした他は実施例１と同様に試験
した。この試験の結果、研磨除去量は６３μを示すが、
表面精度Ｒmax＝７.０ｎｍであり、表面状態は悪かっ
た。Comparative Example 1 An alkaline colloidal silica solution [Adelite AT-30: Asahi Denka Kogyo KK] having an average particle diameter of 12 nm and a silica solid content of 30% by weight was diluted with water to a silica solid content of 5% by weight. Diethylenetriamine as a water-soluble organic amine was added to 1000 parts by weight of this solution at a ratio of 30 parts by weight (60% by weight with respect to the silica solid content), and the mixture was sufficiently stirred until it became uniform to prepare an abrasive composition. The same test as in Example 1 was carried out. As a result of this test, the polishing removal amount is 63 μ,
The surface accuracy was R max = 7.0 nm, and the surface condition was poor.
【００３１】比較例２ 平均粒子径２５ｎｍ、シリカ固形分５０重量％のアルカ
リ性コロイダルシリカ液〔アデライトＡＴ−５０：旭電
化工業(株)製〕をシリカ固形分５重量％に水で希釈し
た。この溶液１０００重量部に水溶性有機アミンとして
Ｎ,Ｎ−ジブチルエタノールアミンを３０重量部（シリ
カ固形分に対して６０重量％）及びポリビニルアルコー
ルのシリル化変成物として(株)クラレ社製Ｒ−１１３０
（商品名）を０.０２重量部（シリカ固形分に対して０.
０４重量％）の割合で添加し、均一になるまで充分に攪
拌して研磨剤組成物とした他は実施例１と同様に試験し
た。この試験の結果、研磨除去量は６２μを示すが、表
面精度Ｒmax＝６.８ｎｍであり、表面状態は悪かった。Comparative Example 2 An alkaline colloidal silica liquid [Adelite AT-50: manufactured by Asahi Denka Kogyo Co., Ltd.] having an average particle diameter of 25 nm and a silica solid content of 50% by weight was diluted with water to a silica solid content of 5% by weight. To 1000 parts by weight of this solution, 30 parts by weight of N, N-dibutylethanolamine as a water-soluble organic amine (60% by weight based on the solid content of silica) and as a silylated modification of polyvinyl alcohol manufactured by Kuraray Co., Ltd. 1130
(Trade name) 0.02 parts by weight (0.0
(04% by weight) and the mixture was thoroughly stirred until it became uniform to prepare an abrasive composition, and the same test as in Example 1 was carried out. As a result of this test, the polishing removal amount was 62 μ, but the surface accuracy was R max = 6.8 nm and the surface condition was poor.
【００３２】比較例３ 平均粒子径４５ｎｍ、シリカ固形分５０重量％のアルカ
リ性コロイダルシリカ液〔アデライトＢＴ−５５：旭電
化工業(株)製〕をシリカ固形分５重量％に希釈した。こ
の溶液１０００重量部に有機水溶性アミンとしてエチレ
ンジアミンを２０重量部（シリカ固形分に対して４０重
量％）及びポリビニルアルコールのシリル化変成物とし
て(株)クラレ社製Ｒ−１１３０（商品名）を０.８重量
部（シリカ固形分に対して１.６重量％）の割合で添加
し、均一になるまで充分に攪拌して研磨剤組成物とした
他は実施例１と同様に試験した。この試験の結果、表面
精度Ｒmax＝３.７ｎｍを示すが、研磨除去量は４４μと
小さく使用に適さなかった。Comparative Example 3 An alkaline colloidal silica solution [Adelite BT-55: manufactured by Asahi Denka Kogyo Co., Ltd.] having an average particle size of 45 nm and a silica solid content of 50% by weight was diluted to a silica solid content of 5% by weight. To 1000 parts by weight of this solution, 20 parts by weight of ethylenediamine as an organic water-soluble amine (40% by weight based on the solid content of silica) and R-1130 (trade name) manufactured by Kuraray Co., Ltd. as a silylated modified product of polyvinyl alcohol are used. The test was performed in the same manner as in Example 1 except that 0.8 parts by weight (1.6% by weight based on the solid content of silica) was added and the mixture was sufficiently stirred until it became uniform to prepare an abrasive composition. As a result of this test, the surface accuracy R max was 3.7 nm, but the polishing removal amount was as small as 44 μ and was not suitable for use.
【００３３】実施例４ 攪拌機、温度計、還流冷却器、窒素導入管及び導出管を
備えた３リットル三つ口フラスコ中に窒素気流下で酢酸
ビニル７２０ｇ、ビニルトリエトキシシラン３０ｇ及び
酢酸エチル７５０ｇを加え、攪拌下に水浴を用いて７５
℃に加熱した。次いで、ここにアゾイソ酪酸ジニトリル
０.７５０ｇを加えた。７５℃で２時間加熱し、且つ更
に７５℃で３時間加熱の後に、その都度アゾイソ酪酸ジ
ニトリル０.７５０ｇを加えた。合計７.５時間の反応時
間の後に３０分かけて酢酸エチル３７５ｇを滴下した。
その後酢酸エチルを蒸発させて取り除き前駆体ポリマー
を得た。一方、攪拌機、還流冷却器及び滴下ロートを備
えた５００ミリリットル三つ口フラスコ中に１重量％濃
度のＮａＯＨメタノール溶液５０ミリリットルを加え
た。次いで、フラスコ内容物を攪拌下に５０℃に加温
し、滴下ロートから３０分かけて上記前駆体ポリマー１
５ｇを加えた。その後さらに５０℃で３０分攪拌した。
生成物をメタノールで洗浄しポリビニルアルコールのシ
リル化変成物（１Ａ）を得た。又、メタノールで洗浄す
る前に塩酸で酸性溶液として式（２）のＸがＨであるポ
リビニルアルコールのシリル化変成物（１Ｂ）を得た。
但し、式（２）構造単位の割合が（１Ａ）と同じになる
ようにした。同様にして表１のポリビニルアルコールの
シリル化変成物を得、それぞれについて実施例１と同様
の試験を行った。結果を表２に示す。Example 4 720 g of vinyl acetate, 30 g of vinyltriethoxysilane and 750 g of ethyl acetate were placed under a nitrogen stream in a 3-liter three-necked flask equipped with a stirrer, a thermometer, a reflux condenser, a nitrogen inlet tube and an outlet tube. In addition, use a water bath with stirring for 75
Heated to ° C. Then, 0.750 g of azoisobutyric acid dinitrile was added thereto. After heating for 2 hours at 75 ° C. and for a further 3 hours at 75 ° C., 0.750 g of azoisobutyric acid dinitrile was added each time. After a total reaction time of 7.5 hours, 375 g of ethyl acetate was added dropwise over 30 minutes.
After that, ethyl acetate was evaporated and removed to obtain a precursor polymer. On the other hand, 50 ml of a 1 wt% concentration NaOH methanol solution was added to a 500 ml three-necked flask equipped with a stirrer, a reflux condenser and a dropping funnel. Next, the contents of the flask were heated to 50 ° C. with stirring, and the precursor polymer 1 was added from the dropping funnel over 30 minutes.
5 g was added. Then, the mixture was further stirred at 50 ° C. for 30 minutes.
The product was washed with methanol to obtain a silylated modification product (1A) of polyvinyl alcohol. Further, a silylated modification product (1B) of polyvinyl alcohol in which X in formula (2) is H was obtained as an acidic solution with hydrochloric acid before washing with methanol.
However, the ratio of the structural unit of the formula (2) was set to be the same as that of (1A). In the same manner, the silylated modified products of polyvinyl alcohol in Table 1 were obtained, and the same tests as in Example 1 were conducted for each. Table 2 shows the results.
【００３４】[0034]
【表１】 [Table 1]
【００３５】[0035]
【表２】 [Table 2]
【００３６】実施例５ 上記実施例１〜３で使用した組成と同様の、但し、コロ
イダルシリカの希釈度を変えて組成物全体の固形分濃度
を１０重量％として本発明のシリコンウェハ研磨剤用組
成物を得た。又、上述と同様にコロイダルシリカの希釈
度を変えて表−２の１〜６と同様の組成で組成物全体の
固形分濃度を３０重量％とした本発明のシリコンウエハ
研磨剤用組成物を得た。更に、上述と同様にコロイダル
シリカの希釈度を変えて表−２の７〜２０と同様の組成
で組成物全体の固形分濃度を４５重量％とした本発明の
シリコンウェハ研磨剤用組成物を得た。又、同様にコロ
イダルシリカの希釈度を変えて表−２の２１〜２６と同
様の組成で組成物全体の固形分濃度を６０重量％とした
本発明のシリコンウェハ研磨剤用組成物を得た。これら
のシリコンウェハ研磨剤用組成物を１ヶ月室温に放置し
たがいずれも安定に分散しており、任意の濃度に希釈す
ることで良好なシリコンウェハ研磨剤組成物を得ること
ができた。Example 5 For the silicon wafer polishing agent of the present invention, which has the same composition as that used in Examples 1 to 3 above, except that the solid content concentration of the entire composition is 10% by weight by changing the dilution degree of colloidal silica. A composition was obtained. Further, the composition for a silicon wafer polishing agent of the present invention was prepared by changing the dilution degree of colloidal silica in the same manner as described above and making the solid content concentration of the whole composition 30% by weight with the same composition as 1 to 6 in Table-2. Obtained. Further, the composition for a silicon wafer polishing agent of the present invention, in which the solid content concentration of the entire composition was 45% by weight, with the same composition as 7 to 20 in Table 2 by changing the dilution degree of colloidal silica in the same manner as described above. Obtained. Similarly, the diluting degree of colloidal silica was changed to obtain a composition for a silicon wafer polishing agent of the present invention having the same composition as 21 to 26 in Table 2 and having a solid content concentration of 60% by weight of the entire composition. . These compositions for silicon wafer polishing agents were allowed to stand at room temperature for one month, but all were stably dispersed, and it was possible to obtain good silicon wafer polishing agent compositions by diluting to any concentration.
【００３７】[0037]
【発明の効果】本発明の効果は、優れた研磨効率と表面
精度を与える、良好なシリコンウェハ研磨剤組成物を提
供したことにある。又、本発明の他の効果は、優れた研
磨効率と表面精度を与える、良好なシリコンウェハ研磨
剤を得ることのできるシリコンウェハ研磨剤用組成物を
提供したことにある。The effect of the present invention is to provide a good silicon wafer polishing composition which gives excellent polishing efficiency and surface accuracy. Another effect of the present invention is to provide a composition for a silicon wafer polishing agent, which gives excellent polishing efficiency and surface accuracy and is capable of obtaining a good silicon wafer polishing agent.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 平塚 一郎 東京都荒川区東尾久７丁目２番35号 旭電 化工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ichiro Hiratsuka 7-35 Higashiohisa, Arakawa-ku, Tokyo Asahi Denka Kogyo Co., Ltd.
Claims (4)
〜８０重量％の水溶性有機アミン、このシリカ固形分に
対して０.０５〜１％重量％のポリビニルアルコールの
シリル化変成物、及び残部水が必須の成分として均一に
分散しており、組成物全体の固形分濃度２〜２０重量
％、ｐＨ８〜１３、分散状態でのシリカ平均粒子径７〜
１００ｎｍであることを特徴とするシリコンウェハ研磨
剤組成物。1. Silica and 5 relative to the silica solid content
-80% by weight of water-soluble organic amine, 0.05 to 1% by weight of the silylated modification product of polyvinyl alcohol, and the balance water are uniformly dispersed as essential components with respect to the silica solid content. The solid content concentration of the whole product is 2 to 20% by weight, the pH is 8 to 13, and the silica average particle diameter in the dispersed state is 7 to
A silicon wafer polishing agent composition having a thickness of 100 nm.
が、式(１) 【化１】 の構造単位が８０〜９９.９重量％、及び式(２) 【化２】 （式中、ｎは０、１又は２であり、Ｒは水素、アリール
基、シクロアルキル基、アリールアルキル基又は炭素原
子数１〜１８の直鎖飽和アルキル基であり、前記ｎが２
のときは同一でも異なっていてもよく、ＸはＨ、アルカ
リ金属又はＮＨ4であり、前記ｎが０又は１のときは同
一でも異なっていてもよい）の構造単位が０.１〜２０
重量％からなるものである請求項１に記載のシリコンウ
ェハ研磨剤組成物。2. A silylated modified product of polyvinyl alcohol has the formula (1): 80% to 99.9% by weight of the structural unit of the formula (2) (In the formula, n is 0, 1 or 2, R is hydrogen, an aryl group, a cycloalkyl group, an arylalkyl group or a linear saturated alkyl group having 1 to 18 carbon atoms, and n is 2
When X is H, an alkali metal or NH 4 , and when n is 0 or 1, they may be the same or different) and the structural unit is 0.1 to 20.
The silicon wafer polishing composition according to claim 1, wherein the silicon wafer polishing composition comprises 1% by weight.
〜８０重量％の水溶性有機アミン、このシリカ固形分に
対して０.０５〜１％重量％のポリビニルアルコールの
シリル化変成物、及び残部水が必須の成分として均一に
分散しており、組成物全体の固形分濃度５〜８０重量
％、ｐＨ８〜１３、分散状態でのシリカ平均粒子径７〜
１００ｎｍであることを特徴とするシリコンウェハ研磨
剤用組成物。3. Silica and 5 relative to this silica solid content
-80% by weight of water-soluble organic amine, 0.05 to 1% by weight of the silylated modification product of polyvinyl alcohol, and the balance water are uniformly dispersed as essential components with respect to the silica solid content. The solid content concentration of the whole product is 5 to 80% by weight, the pH is 8 to 13, and the average silica particle diameter in the dispersed state is 7 to
A composition for a silicon wafer polishing agent, which has a thickness of 100 nm.
が、式(１) 【化３】 の構造単位が８０〜９９.９重量％、及び式(２) 【化４】 （式中、ｎは０、１又は２であり、Ｒは水素、アリール
基、シクロアルキル基、アリールアルキル基又は炭素原
子数１〜１８の直鎖飽和アルキル基であり、前記ｎが２
のときは同一でも異なっていてもよく、ＸはＨ、アルカ
リ金属又はＮＨ4であり、前記ｎが０又は１のときは同
一でも異なっていてもよい）の構造単位が０.１〜２０
重量％からなるものである請求項３に記載のシリコンウ
ェハ研磨剤用組成物。4. A silylated modification product of polyvinyl alcohol has the formula (1): 80% to 99.9% by weight of the structural unit of the formula (2) (In the formula, n is 0, 1 or 2, R is hydrogen, an aryl group, a cycloalkyl group, an arylalkyl group or a linear saturated alkyl group having 1 to 18 carbon atoms, and n is 2
When X is H, an alkali metal or NH 4 , and when n is 0 or 1, they may be the same or different) and the structural unit is 0.1 to 20.
The composition for a silicon wafer polishing agent according to claim 3, which is composed of wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25247494A JPH08113772A (en) | 1994-10-18 | 1994-10-18 | Silicon wafer abrasive composition and composition for silicon wafer abrasive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25247494A JPH08113772A (en) | 1994-10-18 | 1994-10-18 | Silicon wafer abrasive composition and composition for silicon wafer abrasive |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08113772A true JPH08113772A (en) | 1996-05-07 |
Family
ID=17237890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25247494A Pending JPH08113772A (en) | 1994-10-18 | 1994-10-18 | Silicon wafer abrasive composition and composition for silicon wafer abrasive |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08113772A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| JP2005286224A (en) * | 2004-03-30 | 2005-10-13 | Nitta Haas Inc | Semiconductor polishing composition |
| KR100796967B1 (en) * | 2000-10-23 | 2008-01-22 | 카오카부시키가이샤 | Polishing liquid composition |
| US7481950B2 (en) | 2002-09-30 | 2009-01-27 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| JP2009155466A (en) * | 2007-12-26 | 2009-07-16 | Kao Corp | Polishing liquid composition |
| WO2014129408A1 (en) | 2013-02-21 | 2014-08-28 | 株式会社フジミインコーポレーテッド | Polishing composition and method for manufacturing polished article |
| CN104449569A (en) * | 2014-11-18 | 2015-03-25 | 桂林华越环保科技有限公司 | Mineral powder grinding aid |
| JP2017011220A (en) * | 2015-06-25 | 2017-01-12 | 花王株式会社 | Polishing liquid composition for silicon wafer |
| JP2018074049A (en) * | 2016-10-31 | 2018-05-10 | 花王株式会社 | Polishing liquid composition for silicon wafer |
-
1994
- 1994-10-18 JP JP25247494A patent/JPH08113772A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6767476B2 (en) * | 1997-07-28 | 2004-07-27 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| KR100796967B1 (en) * | 2000-10-23 | 2008-01-22 | 카오카부시키가이샤 | Polishing liquid composition |
| US7481950B2 (en) | 2002-09-30 | 2009-01-27 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| JP4532149B2 (en) * | 2004-03-30 | 2010-08-25 | ニッタ・ハース株式会社 | Silicon wafer polishing composition and silicon wafer polishing method |
| JP2005286224A (en) * | 2004-03-30 | 2005-10-13 | Nitta Haas Inc | Semiconductor polishing composition |
| JP2009155466A (en) * | 2007-12-26 | 2009-07-16 | Kao Corp | Polishing liquid composition |
| WO2014129408A1 (en) | 2013-02-21 | 2014-08-28 | 株式会社フジミインコーポレーテッド | Polishing composition and method for manufacturing polished article |
| KR20150123265A (en) | 2013-02-21 | 2015-11-03 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition and method for manufacturing polished article |
| US9566685B2 (en) | 2013-02-21 | 2017-02-14 | Fujimi Incorporated | Polishing composition and method for producing polished article |
| CN104449569A (en) * | 2014-11-18 | 2015-03-25 | 桂林华越环保科技有限公司 | Mineral powder grinding aid |
| JP2017011220A (en) * | 2015-06-25 | 2017-01-12 | 花王株式会社 | Polishing liquid composition for silicon wafer |
| JP2018074049A (en) * | 2016-10-31 | 2018-05-10 | 花王株式会社 | Polishing liquid composition for silicon wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI243849B (en) | Slurry composition for secondary polishing of silicon wafer | |
| KR0151844B1 (en) | Fine polishing composition for wafers | |
| JPH10309660A (en) | Finishing abrasive | |
| TW591100B (en) | Cerium oxide abrasive and method for preparing substrates | |
| TWI228538B (en) | Polishing composition | |
| TW200825146A (en) | Slurry composition for final polishing of silicon wafers and method for final polishing of silicon wafers using the same | |
| JP2004266155A (en) | Water dispersed element for chemical mechanical polishing and chemical mechanical polishing method using the same and method for manufacturing semiconductor device | |
| JP7061969B2 (en) | Polishing composition and polishing method | |
| JP6978933B2 (en) | Polishing composition | |
| JPH08113772A (en) | Silicon wafer abrasive composition and composition for silicon wafer abrasive | |
| WO2011158718A1 (en) | Polishing liquid for semiconductor substrate and method for producing semiconductor wafer | |
| TW517301B (en) | Polishing slurry for the chemical-mechanical polishing of silica films | |
| JP6373273B2 (en) | Abrasive composition, abrasive composition for silicon wafer, and method for producing silicon wafer product | |
| JP6350861B2 (en) | Colloidal silica and semiconductor wafer polishing composition containing the same | |
| JP2021177534A (en) | Abrasive liquid composition | |
| JPH11279534A (en) | Surface polishing liquid composition for semiconductor product | |
| TW202227567A (en) | Polishing liquid composition for silicon substrate | |
| TW202221099A (en) | Polishing of silicon substrate | |
| JP2023003633A (en) | Polishing liquid composition for silicon substrate | |
| JP2013110253A (en) | Semiconductor substrate polishing solution and semiconductor substrate polishing method | |
| JP2023154963A (en) | Polishing liquid composition for silicon substrate | |
| JP2023020529A (en) | Polishing liquid composition | |
| JP2023008518A (en) | Silicon substrate polishing method | |
| JP2022063115A (en) | Polishing method | |
| JP2022063233A (en) | Polishing liquid composition for silicon substrate |