JPH08110352A - Semiconductor acceleration detection device - Google Patents
Semiconductor acceleration detection deviceInfo
- Publication number
- JPH08110352A JPH08110352A JP24617394A JP24617394A JPH08110352A JP H08110352 A JPH08110352 A JP H08110352A JP 24617394 A JP24617394 A JP 24617394A JP 24617394 A JP24617394 A JP 24617394A JP H08110352 A JPH08110352 A JP H08110352A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration
- acceleration detection
- gauge
- detection beam
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
- B60T8/00—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force
- B60T8/17—Using electrical or electronic regulation means to control braking
- B60T8/171—Detecting parameters used in the regulation; Measuring values used in the regulation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体加速度検出装
置、特に、自動車用のＡＢＳ、エアバックシステム等に
用いられる半導体加速度検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration detecting device, and more particularly to a semiconductor acceleration detecting device used in an automobile ABS, an air bag system or the like.
【０００２】[0002]
【従来の技術】図４は、従来の半導体加速度検出装置を
示す側断面図である。図において、半導体のピエゾ抵抗
効果を利用し、応力を電気信号に変換するゲージ抵抗１
は、ブリッジ回路を構成して加速度検出梁２ａの表面に
設けられている。ゲージ抵抗１が設けられた加速度検出
梁２ａの裏面には、感度を向上させるために加速度検出
梁２ａを薄肉化したダイヤフラム３が形成されている。
加速度検出梁２ａの端部には、加速度検出梁２ａを片持
ち梁構造とするための支柱となる台座４が取り付けられ
ている。2. Description of the Related Art FIG. 4 is a side sectional view showing a conventional semiconductor acceleration detecting device. In the figure, a gauge resistor 1 that converts stress into an electric signal by utilizing the piezoresistive effect of a semiconductor
Are provided on the surface of the acceleration detection beam 2a forming a bridge circuit. On the back surface of the acceleration detection beam 2a provided with the gauge resistor 1, a diaphragm 3 is formed by thinning the acceleration detection beam 2a in order to improve sensitivity.
A pedestal 4 is attached to an end portion of the acceleration detection beam 2a, which serves as a support for making the acceleration detection beam 2a into a cantilever structure.
【０００３】台座４は、ベース５ａに固着されており、
このベース５ａと加速度検出梁２ａ等を覆うキャップ５
ｂにより、半導体加速度検出装置のパッケージ５が形成
されている。また、ベース５ａには電気信号をパッケー
ジ５の外部に伝達するためのリードピン６が設けられて
おり、リードピン６には加速度検出梁２ａからリードピ
ン６に電気信号を伝達するためのワイヤ７が接続されて
いる。The base 4 is fixed to a base 5a,
A cap 5 for covering the base 5a and the acceleration detection beam 2a, etc.
The semiconductor acceleration detection device package 5 is formed by b. A lead pin 6 for transmitting an electric signal to the outside of the package 5 is provided on the base 5a, and a wire 7 for transmitting an electric signal from the acceleration detection beam 2a to the lead pin 6 is connected to the lead pin 6. ing.
【０００４】従来の半導体加速度検出装置は上述したよ
うに構成され、加速度が図４のＡ方向から印加される
と、印加された加速度に応じて加速度検出梁２ａがしな
り、このしなり具合からゲージ抵抗１により加速度を検
出することができる。The conventional semiconductor acceleration detecting device is constructed as described above, and when the acceleration is applied from the direction A in FIG. 4, the acceleration detecting beam 2a bends according to the applied acceleration. Acceleration can be detected by the gauge resistance 1.
【０００５】[0005]
【発明が解決しようとする課題】上述したような半導体
加速度検出装置では、ダイヤフラム３は加速度検出梁２
ａのゲージ抵抗１を有する反対の面からエッチングによ
る溶融等により形成されている。従って、加速度検出梁
２ａの重心位置８は、ゲージ抵抗１が形成されている加
速度検出梁２ａの表面からｔだけずれることになる。こ
のため、本来、加速度を検出すべき方向Ａ以外の方向Ｂ
から加速度が印加された場合、加速度検出梁２ａにモー
メントが働き、加速度検出梁２ａは上側へしなって加速
度を検出してしまい、加速度の検出値に誤差を生じると
いう問題点があった。この発明は、このような問題点を
解決するためになされたもので、検出すべき方向以外の
加速度をキャンセルし、小型で感度のよい半導体加速度
検出装置を得ることを目的とする。In the semiconductor acceleration detecting device as described above, the diaphragm 3 has the acceleration detecting beam 2.
It is formed by melting or the like by etching from the opposite surface having the gauge resistance 1 of a. Therefore, the center of gravity position 8 of the acceleration detection beam 2a is displaced by t from the surface of the acceleration detection beam 2a on which the gauge resistance 1 is formed. Therefore, the direction B other than the direction A in which the acceleration should originally be detected is
When acceleration is applied to the acceleration detection beam 2a, a moment acts on the acceleration detection beam 2a, and the acceleration detection beam 2a bends upward to detect the acceleration, which causes a problem in the detected acceleration value. The present invention has been made to solve such a problem, and an object of the present invention is to obtain a semiconductor acceleration detection device that cancels accelerations in directions other than the direction to be detected and has a small size and high sensitivity.
【０００６】[0006]
【課題を解決するための手段】この発明の請求項第１項
に係る発明は、一方の面にゲージ抵抗がブリッジ回路を
構成するように形成され、このゲージ抵抗の裏面にダイ
ヤフラムが形成された加速度検出梁を台座によりパッケ
ージに固定された半導体加速度検出装置であって、上記
加速度検出梁はその長手方向の中央で上記台座に固定さ
れ、上記ゲージ抵抗及び上記ダイヤフラムは上記台座を
線対称の中心として上記加速度検出梁の長手方向両側に
線対称となるようにそれぞれ設けられたものである。According to a first aspect of the present invention, a gauge resistor is formed on one surface so as to form a bridge circuit, and a diaphragm is formed on the back surface of the gauge resistor. A semiconductor acceleration detecting device in which an acceleration detection beam is fixed to a package by a pedestal, wherein the acceleration detection beam is fixed to the pedestal at the center in the longitudinal direction thereof, and the gauge resistance and the diaphragm have a line-symmetrical center with respect to the pedestal. Are provided so as to be line-symmetrical on both sides in the longitudinal direction of the acceleration detection beam.
【０００７】この発明の請求項第２項に係る発明は、加
速度検出梁に線対称となる位置に設けられた２組のゲー
ジ抵抗を構成する各ゲージ抵抗は、台座を介して互いに
対向する各ゲージ抵抗が直列に結線され、上記２組のゲ
ージ抵抗により１つのブリッジ回路が構成されたもので
ある。According to the second aspect of the present invention, the gauge resistors constituting the two sets of gauge resistors provided in the acceleration detection beam at positions which are line-symmetrical to each other are opposed to each other through the pedestal. The gauge resistors are connected in series, and one bridge circuit is configured by the two sets of gauge resistors.
【０００８】[0008]
【作用】この発明の請求項第１項においては、加速度検
出梁の長手方向における加速度の検出を低減する。According to the first aspect of the present invention, the detection of acceleration in the longitudinal direction of the acceleration detection beam is reduced.
【０００９】この発明の請求項第２項においては、加速
度検出梁の長手方向における加速度の検出を低減すると
共に、加速度検出梁の垂直方向における加速度の感度を
２倍にする。According to the second aspect of the present invention, the detection of acceleration in the longitudinal direction of the acceleration detection beam is reduced, and the sensitivity of acceleration in the vertical direction of the acceleration detection beam is doubled.
【００１０】[0010]
【実施例】図１は、この発明の一実施例による半導体加
速度検出装置を示す側断面図である。なお、各図中、同
一符号は同一又は相当部分を示している。図において、
半導体加速度検出装置のベース５ａのほぼ中央に台座４
が配置されており、この台座４により加速度検出梁２が
支持されている。加速度検出梁２の長手方向の両側に
は、台座４を線対称の中心として、全く同一寸法、構造
の２つの梁が形成されており、２つの梁にはそれぞれダ
イヤフラム３、ゲージ抵抗１が設けられている。1 is a side sectional view showing a semiconductor acceleration detecting device according to an embodiment of the present invention. In the drawings, the same reference numerals indicate the same or corresponding parts. In the figure,
The base 4a of the semiconductor acceleration detection device has a pedestal 4 substantially in the center thereof.
Are arranged, and the pedestal 4 supports the acceleration detection beam 2. Two beams having exactly the same size and structure are formed on both sides of the acceleration detection beam 2 in the longitudinal direction with the pedestal 4 as the center of line symmetry. The two beams are provided with a diaphragm 3 and a gauge resistor 1, respectively. Has been.
【００１１】また、図２に示すように、左側の梁には各
ゲージ抵抗Ｒ１ａ〜Ｒ４ａが形成されており、右側の梁
には各ゲージ抵抗Ｒ１ｂ〜Ｒ４ｂが形成され、これらの
ゲージ抵抗は図３に示すようにブリッジ回路を構成して
いる。すなわち、台座４を介して対向したゲージ抵抗Ｒ
１ａとゲージ抵抗Ｒ１ｂ、ゲージ抵抗Ｒ２ａとゲージ抵
抗Ｒ２ｂ、ゲージ抵抗Ｒ３ａとゲージ抵抗Ｒ３ｂ、ゲー
ジ抵抗Ｒ４ａとゲージ抵抗Ｒ４ｂがそれぞれ直列に結線
されてブリッジ回路が構成されている。Further, as shown in FIG. 2, the gauge resistors R1a to R4a are formed on the left beam, and the gauge resistors R1b to R4b are formed on the right beam. As shown in 3, a bridge circuit is constructed. That is, the gauge resistance R facing through the pedestal 4
1a and a gauge resistor R1b, a gauge resistor R2a and a gauge resistor R2b, a gauge resistor R3a and a gauge resistor R3b, and a gauge resistor R4a and a gauge resistor R4b are respectively connected in series to form a bridge circuit.
【００１２】上述したように構成された半導体加速度検
出装置において、本来、加速度を検出すべきでない加速
度検出梁２の長手方向である方向Ｂから加速度が印加さ
れた場合、図１の加速度検出梁２における右側の梁は上
側へしなり、左側の梁は下側へしなる。この時、ゲージ
抵抗Ｒ１ｂ〜Ｒ４ｂは縮むことによりゲージ抵抗Ｒ１ｂ
及びＲ４ｂでは抵抗値が増大し、ゲージ抵抗Ｒ２ｂ及び
Ｒ３ｂでは抵抗値が減少する。一方、ゲージ抵抗Ｒ１ａ
〜Ｒ４ａは延びることによりゲージ抵抗Ｒ１ａ及びＲ４
ａでは抵抗値が減少し、ゲージ抵抗Ｒ２ａ及びＲ３ａで
は抵抗値が増大する。In the semiconductor acceleration detecting device configured as described above, when the acceleration is applied from the direction B which is the longitudinal direction of the acceleration detecting beam 2 where the acceleration should not be originally detected, the acceleration detecting beam 2 of FIG. The beam on the right side of the curve bends to the upper side, and the beam on the left side bends to the lower side. At this time, the gauge resistances R1b to R4b are contracted so that the gauge resistance R1b is reduced.
And R4b increase the resistance value, and the gauge resistances R2b and R3b decrease the resistance value. On the other hand, gauge resistance R1a
~ R4a extends so that gauge resistances R1a and R4
The resistance value decreases at a, and the resistance values increase at the gauge resistors R2a and R3a.
【００１３】ところが、上述のようにゲージ抵抗Ｒ１ａ
とゲージ抵抗Ｒ１ｂ、ゲージ抵抗Ｒ２ａとゲージ抵抗Ｒ
２ｂ、ゲージ抵抗Ｒ３ａとゲージ抵抗Ｒ３ｂ、ゲージ抵
抗Ｒ４ａとゲージ抵抗Ｒ４ｂとはそれぞれ直列に接続さ
れており、抵抗値の増減が互いに相殺されることにな
る。従って、方向Ｂの加速度は検出されないことにな
り、方向Ｂにおける加速度の感度を低減することができ
る。また、本来、加速度を検出すべき加速度検出梁２の
垂直方向である方向Ａから加速度が印加された場合、加
速度検出梁２の２つの梁は同じ方向へしなる。従って、
加速度検出梁２では従来の加速度検出梁２ａに比べ２倍
の感度を得ることができる。このように、加速度検出梁
２の簡単な改善によって、半導体加速度検出装置の小型
化が図れ、加速度の検出感度を向上させることができ
る。However, as described above, the gauge resistance R1a
And gauge resistance R1b, gauge resistance R2a and gauge resistance R
2b, the gauge resistance R3a and the gauge resistance R3b, and the gauge resistance R4a and the gauge resistance R4b are connected in series, and the increase and decrease of the resistance values are offset each other. Therefore, the acceleration in the direction B is not detected, and the sensitivity of the acceleration in the direction B can be reduced. Further, when acceleration is applied from the direction A, which is the vertical direction of the acceleration detection beam 2 that should originally detect the acceleration, the two beams of the acceleration detection beam 2 are in the same direction. Therefore,
The acceleration detection beam 2 can be twice as sensitive as the conventional acceleration detection beam 2a. As described above, by simply improving the acceleration detection beam 2, the semiconductor acceleration detection device can be downsized and the acceleration detection sensitivity can be improved.
【００１４】[0014]
【発明の効果】以上説明したとおり、この発明の請求項
第１項は、一方の面にゲージ抵抗がブリッジ回路を構成
するように形成され、このゲージ抵抗の裏面にダイヤフ
ラムが形成された加速度検出梁を台座によりパッケージ
に固定された半導体加速度検出装置であって、上記加速
度検出梁はその長手方向の中央で上記台座に固定され、
上記ゲージ抵抗及び上記ダイヤフラムは上記台座を線対
称の中心として上記加速度検出梁の長手方向両側に線対
称となるようにそれぞれ設けられたので、加速度検出梁
の長手方向における加速度の検出を低減し、正確な加速
度検出を可能にするという効果を奏する。。As described above, according to the first aspect of the present invention, the gage resistor is formed on one surface so as to form a bridge circuit, and the diaphragm is formed on the back surface of the gage resistor. A semiconductor acceleration detecting device in which a beam is fixed to a package by a pedestal, wherein the acceleration detecting beam is fixed to the pedestal at the center in the longitudinal direction,
Since the gauge resistance and the diaphragm are provided so as to be line-symmetrical on both sides in the longitudinal direction of the acceleration detection beam with the pedestal as the center of line symmetry, the detection of acceleration in the longitudinal direction of the acceleration detection beam is reduced, This has the effect of enabling accurate acceleration detection. .
【００１５】この発明の請求項第２項は、加速度検出梁
に線対称となる位置に設けられた２組のゲージ抵抗を構
成する各ゲージ抵抗は、台座を介して互いに対向する各
ゲージ抵抗が直列に結線され、上記２組のゲージ抵抗に
より１つのブリッジ回路が構成されているので、加速度
検出梁の長手方向における加速度の検出を低減すると共
に、加速度検出梁の垂直方向における加速度の感度を２
倍に増加するので、より正確な加速度検出を可能にする
という効果を奏する。According to the second aspect of the present invention, the gauge resistances constituting the two sets of gauge resistances provided in the acceleration detection beam at positions symmetrical to each other are such that the gauge resistances facing each other through the pedestal are Since the two bridge resistors are connected in series to form one bridge circuit, the acceleration detection in the longitudinal direction of the acceleration detection beam is reduced, and the acceleration sensitivity in the vertical direction of the acceleration detection beam is reduced to two.
Since the number is doubled, there is an effect that more accurate acceleration detection can be performed.
【図１】 この発明の一実施例による半導体加速度検出
装置を示す側断面図である。FIG. 1 is a side sectional view showing a semiconductor acceleration detecting device according to an embodiment of the present invention.
【図２】 図１に示した半導体加速度検出装置における
加速度検出梁の平面図である。FIG. 2 is a plan view of an acceleration detection beam in the semiconductor acceleration detection device shown in FIG.
【図３】 図１に示した半導体加速度検出装置における
ブリッジ回路を示す回路図である。FIG. 3 is a circuit diagram showing a bridge circuit in the semiconductor acceleration detection device shown in FIG.
【図４】 従来の半導体加速度検出装置を示す側断面図
である。FIG. 4 is a side sectional view showing a conventional semiconductor acceleration detecting device.
１ ゲージ抵抗、２ 加速度検出梁、３ ダイヤフラ
ム、４ 台座、５ パッケージ、５ａ ベース、５ｂ
キャップ、６ リードピン、７ ワイヤ、８ 重心位
置、Ｒ１ａ〜Ｒ４ｂ ゲージ抵抗。1 gauge resistance, 2 acceleration detection beam, 3 diaphragm, 4 pedestal, 5 package, 5a base, 5b
Cap, 6 lead pins, 7 wires, 8 barycentric position, R1a to R4b gauge resistance.
Claims (2)
構成するように形成され、このゲージ抵抗の裏面にダイ
ヤフラムが形成された加速度検出梁を台座によりパッケ
ージに固定された半導体加速度検出装置であって、上記
加速度検出梁はその長手方向の中央で上記台座に固定さ
れ、上記ゲージ抵抗及び上記ダイヤフラムは上記台座を
線対称の中心として上記加速度検出梁の長手方向両側に
線対称となるようにそれぞれ設けられたことを特徴とす
る半導体加速度検出装置。1. A semiconductor acceleration detecting device in which a gauge resistor is formed on one surface so as to form a bridge circuit, and an acceleration detecting beam having a diaphragm formed on the back surface of the gauge resistor is fixed to a package by a pedestal. The acceleration detection beam is fixed to the pedestal at the center in the longitudinal direction, and the gauge resistance and the diaphragm are line-symmetrical on both sides in the longitudinal direction of the acceleration detection beam with the pedestal as the center of line symmetry. A semiconductor acceleration detecting device provided.
られた２組のゲージ抵抗を構成する各ゲージ抵抗は、台
座を介して互いに対向する各ゲージ抵抗が直列に結線さ
れ、上記２組のゲージ抵抗により１つのブリッジ回路が
構成されていることを特徴とする請求項第１項記載の半
導体加速度検出装置。2. The gage resistors forming two sets of gage resistors provided at positions symmetrical with respect to the acceleration detection beam are connected in series with the gage resistors facing each other via a pedestal, and the two gage resistors are connected in series. 2. The semiconductor acceleration detecting device according to claim 1, wherein one gauge circuit is constituted by the gauge resistance of.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24617394A JPH08110352A (en) | 1994-10-12 | 1994-10-12 | Semiconductor acceleration detection device |
| NO952092A NO952092L (en) | 1994-10-12 | 1995-05-26 | The semiconductor acceleration sensor |
| DE1995122651 DE19522651A1 (en) | 1994-10-12 | 1995-06-22 | Semiconductor acceleration sensor esp. for antiblocking brake system or air bag system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24617394A JPH08110352A (en) | 1994-10-12 | 1994-10-12 | Semiconductor acceleration detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08110352A true JPH08110352A (en) | 1996-04-30 |
Family
ID=17144607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24617394A Pending JPH08110352A (en) | 1994-10-12 | 1994-10-12 | Semiconductor acceleration detection device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08110352A (en) |
| DE (1) | DE19522651A1 (en) |
| NO (1) | NO952092L (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19943852A1 (en) * | 1999-09-13 | 2001-03-22 | Michael Werner | Safety device for preventing unwanted activation of airbag, comprises floor sensor designed to block airbag activation when shock forces act on underside of vehicle |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161157A (en) * | 1987-12-17 | 1989-06-23 | Fujikura Ltd | Semiconductor acceleration sensor |
| JPH01172760A (en) * | 1987-12-28 | 1989-07-07 | Fujikura Ltd | Piezoelectric type acceleration sensor |
| JPH07113647B2 (en) * | 1988-09-02 | 1995-12-06 | 日産自動車株式会社 | Semiconductor acceleration sensor |
| JPH0682472A (en) * | 1992-09-04 | 1994-03-22 | Fujitsu Ten Ltd | Distortion gauge type acceleration sensor |
-
1994
- 1994-10-12 JP JP24617394A patent/JPH08110352A/en active Pending
-
1995
- 1995-05-26 NO NO952092A patent/NO952092L/en not_active Application Discontinuation
- 1995-06-22 DE DE1995122651 patent/DE19522651A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE19522651A1 (en) | 1996-04-18 |
| NO952092L (en) | 1996-04-15 |
| NO952092D0 (en) | 1995-05-26 |
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