JPH0794863A - Method for flattening ceramic substrate surface - Google Patents
Method for flattening ceramic substrate surfaceInfo
- Publication number
- JPH0794863A JPH0794863A JP25529093A JP25529093A JPH0794863A JP H0794863 A JPH0794863 A JP H0794863A JP 25529093 A JP25529093 A JP 25529093A JP 25529093 A JP25529093 A JP 25529093A JP H0794863 A JPH0794863 A JP H0794863A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- thin film
- substrate
- aluminum nitride
- flattening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims abstract description 30
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 229920000592 inorganic polymer Polymers 0.000 claims abstract description 20
- 239000002861 polymer material Substances 0.000 claims abstract description 9
- 229920000620 organic polymer Polymers 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011225 non-oxide ceramic Substances 0.000 description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/46—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
- C04B41/49—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes
- C04B41/4905—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon
- C04B41/495—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon applied to the substrate as oligomers or polymers
- C04B41/4961—Polyorganosiloxanes, i.e. polymers with a Si-O-Si-O-chain; "silicones"
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5076—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with masses bonded by inorganic cements
- C04B41/5077—Geopolymer cements
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00336—Materials with a smooth surface, e.g. obtained by using glass-surfaced moulds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子を実装する
ためのセラミック基板の表面を平坦化する方法に関す
る。一般にセラミック基板は、樹脂基板と比較して熱伝
導率が高く、熱膨張係数がシリコンに近いことから、半
導体素子を実装する際の基板として優れている。そし
て、半導体素子を実装するための基板の表面には、金属
薄膜等による配線を生成する必要があるため、表面が平
坦であることが望まれる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of flattening the surface of a ceramic substrate for mounting a semiconductor device. Generally, a ceramic substrate has a higher thermal conductivity than a resin substrate and has a thermal expansion coefficient close to that of silicon, and thus is excellent as a substrate for mounting a semiconductor element. Since it is necessary to form a wiring by a metal thin film or the like on the surface of the substrate on which the semiconductor element is mounted, it is desired that the surface is flat.
【０００２】[0002]
【従来の技術】比較的焼結が容易なアルミナのような酸
化系のセラミック基板等においては、焼結したままの表
面が平坦な材料もあるが、一般には、その用途に応じて
適宜セラミック基板の表面にガラス層を形成して平坦化
しているのが実情である。焼結しにくい非酸化物系のセ
ラミック基板等においては、焼結に際して助剤を添加す
る必要があり、この助剤が焼結後の粒子の界面に析出す
るため表面の焼結粒子が脱離しやすい。このように粒子
が脱離すると、その表面が平坦にならないため、基板の
表面に平坦化処理を加えることが不可欠である。2. Description of the Related Art There are some ceramics such as alumina which are relatively easy to sinter and which have a flat surface as they are sintered. Generally, however, the ceramic substrate is appropriately selected depending on its application. The reality is that a glass layer is formed on the surface of the to flatten it. For non-oxide ceramic substrates that are difficult to sinter, it is necessary to add an auxiliary agent during sintering, and this auxiliary agent precipitates at the interface of the particles after sintering, so the sintered particles on the surface are detached. Cheap. When the particles are desorbed in this way, the surface of the particles does not become flat, so it is essential to apply a flattening treatment to the surface of the substrate.
【０００３】また、非酸化物系のセラミック基板の代表
である窒化アルミニウム基板においては、共有結合性が
強いため、通常のガラスとの接着性が悪く、特殊な組成
の平坦化薄膜を用いることが必要である。通常のガラス
によって平坦化層を強固に形成しようとすると、この平
坦化層を厚くする必要があり、そのため、セラミック基
板全体の熱伝導率が低下し、その結果、セラミック基板
を通しての放熱性が悪化する。In addition, since an aluminum nitride substrate, which is a typical non-oxide ceramic substrate, has a strong covalent bond, it has poor adhesion to ordinary glass, and a flattening thin film having a special composition should be used. is necessary. In order to firmly form the flattening layer with ordinary glass, it is necessary to thicken the flattening layer, which lowers the thermal conductivity of the entire ceramic substrate, resulting in poor heat dissipation through the ceramic substrate. To do.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、セラミック
基板の表面上に比較的簡便な方法によって、薄いが強固
な平坦化層を形成し、熱伝導率が高く平坦なセラミック
基板を提供することを目的とする。SUMMARY OF THE INVENTION The present invention provides a flat ceramic substrate having a high thermal conductivity by forming a thin but strong flattening layer on the surface of the ceramic substrate by a relatively simple method. With the goal.
【０００５】[0005]
【課題を解決するための手段】本発明にかかるセラミッ
ク基板の表面を平坦化する方法においては、セラミック
基板の表面に下記の組成Ｘの無機高分子薄膜を形成する
ことによって、その表面を平坦化する工程を採用した。In the method of flattening the surface of a ceramic substrate according to the present invention, an inorganic polymer thin film having the following composition X is formed on the surface of the ceramic substrate to flatten the surface. The process of doing is adopted.
【化５】 [Chemical 5]
【０００６】この場合、セラミック基板の上に下記の組
成Ｘ’の高分子材料を滴下してセラミック基板の上にス
ピンコートした後、熱処理することによって無機高分子
薄膜を形成することができる。In this case, an inorganic polymer thin film can be formed by dropping a polymer material having the following composition X'on a ceramic substrate, spin-coating on the ceramic substrate, and then heat treating.
【化６】 [Chemical 6]
【０００７】本発明にかかるセラミック基板の表面を平
坦化する方法においては、セラミック基板の表面に下記
の組成Ｙの有機高分子薄膜を形成することによって、そ
の表面を平坦化する工程を採用した。In the method of flattening the surface of the ceramic substrate according to the present invention, a step of flattening the surface by forming an organic polymer thin film having the following composition Y on the surface of the ceramic substrate is adopted.
【化７】 [Chemical 7]
【０００８】この場合、セラミック基板の上に下記の組
成Ｙ’の高分子材料を滴下してセラミック基板の上にス
ピンコートした後、熱処理することによって有機高分子
薄膜を形成することができる。In this case, an organic polymer thin film can be formed by dropping a polymer material having the following composition Y'on a ceramic substrate, spin-coating on the ceramic substrate, and then heat treating.
【化８】 [Chemical 8]
【０００９】これらの場合、セラミック基板の材料とし
て、熱伝導率が高い窒化アルミニウムを用いて、基板全
体の熱伝導率を高くすることができる。In these cases, aluminum nitride having a high thermal conductivity can be used as the material of the ceramic substrate to increase the thermal conductivity of the entire substrate.
【００１０】[0010]
【作用】本発明のように、表面を研磨処理した後のセラ
ミック基板の表面に前記の組成Ｘ’を有する無機高分子
材料をスピンコートし、熱処理することによって前記組
成Ｘを有する無機高分子膜を形成し、又は、表面を研磨
処理した後のセラミック基板の表面に前記の組成Ｙ’を
有する有機高分子材料をスピンコートし、熱処理するこ
とによって前記組成Ｙを有する無機高分子膜を形成する
ことによって、セラミック基板全体の放熱性を劣化させ
ることなく、表面を平坦化することができるようになっ
た。According to the present invention, the surface of the ceramic substrate after the surface is polished is spin-coated with the inorganic polymer material having the above composition X'and heat-treated to form an inorganic polymer film having the above composition X. Or an organic polymer material having the above composition Y ′ is spin-coated on the surface of the ceramic substrate after the surface is polished and heat-treated to form an inorganic polymer film having the composition Y. As a result, the surface can be flattened without degrading the heat dissipation of the entire ceramic substrate.
【００１１】[0011]
【実施例】以下、本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００１２】（第１実施例）表面を研磨した市販の窒化
アルミニウム基板の表面に前記の組成Ｘ’を有する無機
高分子材料を滴下し、３０００ｒｐｍで１５秒間スピン
コートする。これを大気中で、１５０℃で１５分間乾燥
した後、大気中で７００℃で１時間焼成して、厚さ５０
００Å程度の前記の組成Ｘを有する薄膜を形成して窒化
アルミニウム基板の表面を平坦化する。(First Example) An inorganic polymer material having the above composition X'is dropped onto the surface of a commercially available aluminum nitride substrate whose surface has been polished, and spin coating is performed at 3000 rpm for 15 seconds. This is dried in air at 150 ° C for 15 minutes, and then fired in air at 700 ° C for 1 hour to give a thickness of 50
A thin film having the above composition X of about 00Å is formed to flatten the surface of the aluminum nitride substrate.
【００１３】図１は、第１実施例の無機高分子薄膜を形
成した窒化アルミニウム基板の表面の断面図であり、
（Ａ）は結晶構造の走査型電子顕微鏡（ＳＥＭ）写真、
（Ｂ）はその説明図である。この図面において、ａは窒
化アルミニウム基板の表面、ｂは無機高分子薄膜の表
面、Ｘは無機高分子薄膜である。このＳＥＭ写真（Ａ）
から、窒化アルミニウム基板の表面が平坦化されている
ことがわかるが、更に検討すると、説明図（Ｂ）に曲線
ａで示されるようにかなりの凹凸や組織の破砕がある窒
化アルミニウム基板の表面上に無機高分子薄膜Ｘを形成
することによって、その表面をｂで示されるように平坦
化することができることがわかる。FIG. 1 is a sectional view of the surface of an aluminum nitride substrate on which an inorganic polymer thin film of the first embodiment is formed,
(A) is a scanning electron microscope (SEM) photograph of the crystal structure,
(B) is the explanatory view. In this drawing, a is the surface of the aluminum nitride substrate, b is the surface of the inorganic polymer thin film, and X is the inorganic polymer thin film. This SEM photograph (A)
It can be seen from the above that the surface of the aluminum nitride substrate is flattened. However, upon further study, on the surface of the aluminum nitride substrate where there is considerable unevenness and crushing of the structure as shown by the curve a in the explanatory diagram (B). It is understood that the surface can be flattened by forming the inorganic polymer thin film X on the surface as shown by b.
【００１４】（第２実施例）表面を研磨した市販の窒化
アルミニウム基板の表面に前記の組成Ｙ’を有する有機
高分子材料を滴下し、３０００ｒｐｍで１５秒間スピン
コートする。これを大気中で、１５０℃で１５分間乾燥
した後、窒素中で４５０℃で３０分間焼成して、前記の
組成Ｙを有する薄膜を形成して窒化アルミニウム基板の
表面を平坦化する。(Second Embodiment) An organic polymer material having the above composition Y'is dropped on the surface of a commercially available aluminum nitride substrate whose surface has been polished, and spin-coated at 3000 rpm for 15 seconds. This is dried in air at 150 ° C. for 15 minutes, and then baked in nitrogen at 450 ° C. for 30 minutes to form a thin film having the above composition Y to flatten the surface of the aluminum nitride substrate.
【００１５】図２は、第２実施例の有機高分子薄膜を形
成した窒化アルミニウム基板の表面の断面図であり、
（Ａ）は結晶構造の走査型電子顕微鏡（ＳＥＭ）写真、
（Ｂ）はその説明図である。この図面において、ａは窒
化アルミニウム基板の表面、ｂは無機高分子薄膜の表
面、Ｙは有機高分子薄膜である。このＳＥＭ写真（Ａ）
から、窒化アルミニウム基板の表面が平坦化されている
ことがわかるが、更に検討すると、説明図（Ｂ）に曲線
ａで示されるように、かなりの凹凸や組織の破砕がある
窒化アルミニウム基板の表面上に有機高分子薄膜Ｙを形
成することによって、その表面を曲線ｂで示されるよう
に平坦化することができることがわかる。FIG. 2 is a sectional view of the surface of the aluminum nitride substrate on which the organic polymer thin film of the second embodiment is formed,
(A) is a scanning electron microscope (SEM) photograph of the crystal structure,
(B) is the explanatory view. In this drawing, a is the surface of the aluminum nitride substrate, b is the surface of the inorganic polymer thin film, and Y is the organic polymer thin film. This SEM photograph (A)
It can be seen from the above that the surface of the aluminum nitride substrate is flattened. However, upon further study, the surface of the aluminum nitride substrate has considerable unevenness and crushing of the structure, as indicated by the curve a in the explanatory view (B). It can be seen that by forming the organic polymer thin film Y on the surface, the surface can be flattened as shown by the curve b.
【００１６】上記の各実施例においては、熱伝導率が高
い窒化アルミニウム基板を用いているが、本発明が、窒
化アルミニウム基板に限られずセラミック基板一般に適
用できることはいうまでもない。また、前記組成Ｘの無
機高分子薄膜、前記組成Ｙの有機高分子薄膜の厚さは、
要求される平坦性と熱伝導率を勘案して適宜選択するこ
とができる。In each of the above embodiments, an aluminum nitride substrate having a high thermal conductivity is used, but it goes without saying that the present invention is not limited to an aluminum nitride substrate and can be applied to a ceramic substrate in general. The thickness of the inorganic polymer thin film having the composition X and the thickness of the organic polymer thin film having the composition Y are
It can be appropriately selected in consideration of the required flatness and thermal conductivity.
【００１７】[0017]
【発明の効果】以上説明したように、本発明によると、
全体の熱伝導率を高く保った状態で、前記組成の有機高
分子薄膜あるいは無機高分子薄膜によってセラミック基
板の表面を平坦化することができ、この平坦な表面上
に、多層配線構造を構成する導電体膜、絶縁体膜等を連
続性よく形成することが可能になり、広い範囲のセラミ
ック基板を利用することができ、集積回路技術等の分野
において寄与するところが大きい。As described above, according to the present invention,
The surface of the ceramic substrate can be flattened by the organic polymer thin film or the inorganic polymer thin film having the above composition while keeping the overall thermal conductivity high, and the multilayer wiring structure is formed on this flat surface. It is possible to form a conductor film, an insulator film, and the like with good continuity, a wide range of ceramic substrates can be used, and this has a great contribution in the field of integrated circuit technology and the like.
【図１】第１実施例の無機高分子薄膜を形成した窒化ア
ルミニウム基板の表面の断面図であり、（Ａ）は結晶構
造の走査型電子顕微鏡（ＳＥＭ）写真、（Ｂ）はその説
明図である。FIG. 1 is a cross-sectional view of a surface of an aluminum nitride substrate on which an inorganic polymer thin film of Example 1 is formed, (A) is a scanning electron microscope (SEM) photograph of a crystal structure, and (B) is an explanatory diagram thereof. Is.
【図２】第２実施例の有機高分子薄膜を形成した窒化ア
ルミニウム基板の表面の断面図であり、（Ａ）は結晶構
造の走査型電子顕微鏡（ＳＥＭ）写真、（Ｂ）はその説
明図である。FIG. 2 is a cross-sectional view of the surface of an aluminum nitride substrate on which an organic polymer thin film of Example 2 is formed, (A) is a scanning electron microscope (SEM) photograph of a crystal structure, and (B) is an explanatory diagram thereof. Is.
ａ 窒化アルミニウム基板の表面 ｂ 無機高分子薄膜の表面 Ｘ 無機高分子薄膜 Ｙ 有機高分子薄膜 a Surface of aluminum nitride substrate b Surface of inorganic polymer thin film X Inorganic polymer thin film Y Organic polymer thin film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 橋本 薫 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 亀原 伸男 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kaoru Hashimoto Kaoru Hashimoto 1015 Kamiodanaka, Nakahara-ku, Kanagawa Prefecture, Fujitsu Limited Fujitsu (72) Inventor Nobuo Kamehara 1015, Kamedotaka, Nakahara-ku, Kawasaki, Kanagawa Prefecture Fujitsu Limited
Claims (5)
無機高分子薄膜を形成することによって、該セラミック
基板の表面を平坦化することを特徴とするセラミック基
板の表面を平坦化する方法。 【化１】 1. A method for flattening the surface of a ceramic substrate, which comprises flattening the surface of the ceramic substrate by forming an inorganic polymer thin film having the following composition X on the surface of the ceramic substrate. [Chemical 1]
ク基板の上に下記の組成Ｘ’の高分子材料を滴下して該
セラミック基板の上にスピンコートした後、熱処理する
ことを特徴とする請求項１に記載されたセラミック基板
の表面を平坦化する方法。 【化２】 2. When forming an inorganic polymer thin film, a polymer material having the following composition X ′ is dropped onto a ceramic substrate, spin-coated on the ceramic substrate, and then heat-treated. A method of planarizing the surface of the ceramic substrate according to claim 1. [Chemical 2]
有機高分子薄膜を形成することによって、該セラミック
基板の表面を平坦化することを特徴とするセラミック基
板の表面を平坦化する方法。 【化３】 3. A method for flattening the surface of a ceramic substrate, which comprises flattening the surface of the ceramic substrate by forming an organic polymer thin film having the following composition Y on the surface of the ceramic substrate. [Chemical 3]
ク基板の上に下記の組成Ｙ’の高分子材料を滴下して該
セラミック基板の上にスピンコートした後、熱処理する
ことを特徴とする請求項１に記載されたセラミック基板
の表面を平坦化する方法。 【化４】 4. When forming an organic polymer thin film, a polymer material having the following composition Y ′ is dropped on a ceramic substrate, spin-coated on the ceramic substrate, and then heat-treated. A method of planarizing the surface of the ceramic substrate according to claim 1. [Chemical 4]
ミニウムを用いることを特徴とする請求項１から請求項
４までのいずれか１項に記載されたセラミック基板の表
面を平坦化する方法。5. The method for flattening the surface of a ceramic substrate according to claim 1, wherein aluminum nitride is used as a material for the ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25529093A JPH0794863A (en) | 1993-09-20 | 1993-09-20 | Method for flattening ceramic substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25529093A JPH0794863A (en) | 1993-09-20 | 1993-09-20 | Method for flattening ceramic substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0794863A true JPH0794863A (en) | 1995-04-07 |
Family
ID=17276714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25529093A Withdrawn JPH0794863A (en) | 1993-09-20 | 1993-09-20 | Method for flattening ceramic substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0794863A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1193790A2 (en) * | 2000-09-29 | 2002-04-03 | Robert Bosch Gmbh | Substrate with a smoothed surface and method of manufacturing thereof |
| JP5996435B2 (en) * | 2010-11-22 | 2016-09-21 | 株式会社東芝 | Semiconductor module and method for manufacturing semiconductor module |
-
1993
- 1993-09-20 JP JP25529093A patent/JPH0794863A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1193790A2 (en) * | 2000-09-29 | 2002-04-03 | Robert Bosch Gmbh | Substrate with a smoothed surface and method of manufacturing thereof |
| EP1193790A3 (en) * | 2000-09-29 | 2003-05-14 | Robert Bosch Gmbh | Substrate with a smoothed surface and method of manufacturing thereof |
| JP5996435B2 (en) * | 2010-11-22 | 2016-09-21 | 株式会社東芝 | Semiconductor module and method for manufacturing semiconductor module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001128 |