JPH0787072B2 - Electron tube cathode - Google Patents
Electron tube cathodeInfo
- Publication number
- JPH0787072B2 JPH0787072B2 JP9787388A JP9787388A JPH0787072B2 JP H0787072 B2 JPH0787072 B2 JP H0787072B2 JP 9787388 A JP9787388 A JP 9787388A JP 9787388 A JP9787388 A JP 9787388A JP H0787072 B2 JPH0787072 B2 JP H0787072B2
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- Prior art keywords
- oxide
- electron
- cathode
- substrate
- earth metal
- Prior art date
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- Expired - Lifetime
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- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、TV用ブラウン管などに用いられる電子管用
陰極に関するものである。TECHNICAL FIELD The present invention relates to a cathode for an electron tube used in a cathode ray tube for a TV or the like.
第２図は従来のTV用ブラウン管や撮像管に用いられてい
る陰極を示すものであり、図において、１はシリコン
（Si），マグネシウム（Mg）などの還元性元素を微量含
む主成分がニッケルからなる有底筒状の基体、２はこの
基体１の底部上面に被着され、少なくともバリウム（B
a）を含み、他にストロンチウム（Sr）あるいは／及び
カルシウム（Ca）を含むアルカリ土類金属酸化物からな
る電子放射物質層、３は上記基体１内に配設されたヒー
タであり、加熱により上記電子放射物質層２から熱電子
を放出させるためのものである。FIG. 2 shows a cathode used in a conventional TV cathode ray tube or image pickup tube. In the figure, 1 is nickel as a main component containing a trace amount of reducing elements such as silicon (Si) and magnesium (Mg). A cylindrical base body 2 having a bottom is attached to the upper surface of the bottom of the base body 1, and at least barium (B
The electron-emitting material layer 3 made of an alkaline earth metal oxide containing a) and additionally containing strontium (Sr) and / or calcium (Ca) is a heater arranged in the substrate 1, and This is for emitting thermoelectrons from the electron emitting material layer 2.
このように構成された電子管用陰極において、基体１へ
の電子放射物質層２の被着は次のようにして行われる。
まず、アルカリ土類金属（Ba,Sr,Ca）の三元炭酸塩から
なる懸濁液を基体１の底部上面に塗布し、真空排気工程
中にヒータ（３）によって加熱する。この時、アルカリ
土類金属の炭酸塩はアルカリ土類金属の酸化物に変わ
る。その後、アルカリ土類金属の酸化物の一部を還元し
て半導体的性質を有するように活性化を行うことによ
り、基体１上にアルカリ土類金属の酸化物からなる電子
放射物質層２を被着形成している。In the cathode for an electron tube thus configured, the electron emitting material layer 2 is deposited on the substrate 1 as follows.
First, a suspension composed of a ternary carbonate of an alkaline earth metal (Ba, Sr, Ca) is applied to the upper surface of the bottom portion of the substrate 1 and heated by the heater (3) during the vacuum exhaust process. At this time, the alkaline earth metal carbonate is converted into an alkaline earth metal oxide. After that, a part of the alkaline earth metal oxide is reduced and activated so as to have a semiconductor property, so that the electron emitting material layer 2 made of the alkaline earth metal oxide is coated on the substrate 1. It has been formed.
この活性化工程において、アルカリ土類金属の酸化物の
一部は次のように反応する。つまり、基体１内に含有さ
れたシリコン，マグネシウム等の還元性元素は拡散によ
りアルカリ土類金属の酸化物と基体１との界面に移動
し、アルカリ土類金属酸化物と反応する。例えば、アル
カリ土類金属酸化物が酸化バリウム（BaO）であれば、
次式（１），（２）のように反応する。In this activation process, a part of the alkaline earth metal oxide reacts as follows. That is, the reducing elements such as silicon and magnesium contained in the substrate 1 move to the interface between the alkaline earth metal oxide and the substrate 1 by diffusion and react with the alkaline earth metal oxide. For example, if the alkaline earth metal oxide is barium oxide (BaO),
It reacts as in the following equations (1) and (2).
BaO＋1/2Si＝Ba＋1/2SiO2 ……（１） BaO＋Mg＝Ba＋MgO ……（２） この反応の結果、基体１上に被着形成されたアルカリ土
類金属酸化物の一部が還元され、酸素欠乏型の半導体と
なり、陰極温度700〜800℃の動作温度で0.5〜0.8A/cm2
の電子放射が得られることになる。BaO + 1 / 2Si = Ba + 1 / 2SiO 2 (1) BaO + Mg = Ba + MgO (2) As a result of this reaction, part of the alkaline earth metal oxide deposited on the substrate 1 is reduced and oxygen deficiency occurs. Type semiconductor, 0.5-0.8A / cm 2 at operating temperature of cathode temperature 700-800 ℃
Will be obtained.
ところが、上記電子管用陰極では、電子放射が0.5〜0.8
A/cm2以上の電流密度は取り出せない。その理由とし
て、アルカリ土類金属酸化物の一部を還元反応させた場
合、上記（１），（２）式から明らかなように、基体１
とアルカリ土類金属酸化物層との界面にSiO2,MgOあるい
はBaO・SiO2などの複合酸化物層（中間層）が形成さ
れ、この中間層が高抵抗層となって電流の流れを妨げる
こと、及び上記中間層が基体１中の還元性元素（Si,M
g）が電子放射物質層２の表面側へ拡散するのを妨げる
ため十分な量のバリウム（Ba）が生成されないことが考
えられている。つまり、電子管動作中に基体１と電子放
射物質層２との界面近傍、特に基体１表面近傍のニッケ
ル結晶粒界と上記界面より10μｍ程度電子放射物質層２
内側の位置に上記中間層が偏析するため、電流の流れ及
び電子放射物質層２表面側への還元性元素の拡散が妨げ
られ、高電流密度下の十分な電子放出特性が得られない
という問題があった。However, in the cathode for the electron tube, the electron emission is 0.5 to 0.8.
Current densities above A / cm 2 cannot be extracted. The reason for this is that when a part of the alkaline earth metal oxide is reduced, as is clear from the above formulas (1) and (2), the substrate 1
A complex oxide layer (intermediate layer) such as SiO 2 , MgO or BaO ・ SiO 2 is formed at the interface between and the alkaline earth metal oxide layer, and this intermediate layer functions as a high resistance layer to prevent current flow. And that the intermediate layer is a reducing element (Si, M
It is considered that a sufficient amount of barium (Ba) is not generated because it prevents g) from diffusing to the surface side of the electron emitting material layer 2. That is, during operation of the electron tube, near the interface between the substrate 1 and the electron-emitting substance layer 2, in particular, about 10 μm from the nickel crystal grain boundary near the surface of the substrate 1 and the interface.
Since the intermediate layer is segregated at the inner position, current flow and diffusion of the reducing element toward the surface of the electron-emitting substance layer 2 are hindered, and sufficient electron emission characteristics cannot be obtained under high current density. was there.
これに対して、特願昭60-229303号の出願には、基体に
0.01〜0.5重量％の希土類金属を含有させることによっ
て、電子放射物質層を基体に被着形成する際の活性化時
に、アルカリ土類金属の炭酸塩が分解する際、あるいは
陰極としての動作中に酸化バリウムが解離反応を起こす
際に基体が酸化する反応を防止するとともに、電子放射
物質層中への基体に含有された還元性元素の拡散を適度
に制御し、還元性元素による複合酸化物からなる中間層
が基体と電子放射物質層との界面近傍に集中的に形成さ
れることを防止し、中間層を電子放射物質層内に分散さ
せるという技術が示されている。つまり、この第２の従
来例の電子管用陰極は、中間層が分散されるために、１
〜2A/cm2程度の高電流密度動作でのエミッション劣化が
少ないという優れた特性を有するものである。ところ
が、このものにおいても、2A/cm2を超える、例えば2.5A
/cm2の高電流密度動作ではエミッション劣化が大きいと
いう問題がある。さらに、特願昭60-160851号の出願に
は、電子放射物質層に0.1〜20重量％の希土類金属酸化
物を含有させることにより、第２の従来例と同様、基体
の酸化を防止するとともに中間層を分散させるという技
術が示されている。この場合においても上記と同様に、
2A/cm2の高電流密度動作でも、エミッションの劣化を少
なくできる。しかしながら、2A/cm2以上の高電流密度動
作においては電子放射物質層を流れる電流によるジュー
ル熱でバリウムの蒸発が顕著になり、電子放射特性が劣
化することがある。On the other hand, in the application for Japanese Patent Application No. 60-229303,
By containing 0.01 to 0.5% by weight of the rare earth metal, during activation when depositing the electron emitting material layer on the substrate, when the alkaline earth metal carbonate decomposes, or during operation as the cathode. While preventing the reaction of the substrate to oxidize when barium oxide undergoes a dissociation reaction, the diffusion of the reducing element contained in the substrate into the electron-emitting substance layer is appropriately controlled, and It is disclosed that the intermediate layer is prevented from being intensively formed in the vicinity of the interface between the substrate and the electron emitting material layer, and the intermediate layer is dispersed in the electron emitting material layer. That is, in the second conventional cathode for an electron tube, since the intermediate layer is dispersed,
It has excellent characteristics such as less emission deterioration in high current density operation of about 2 A / cm 2 . However, even in this case, it exceeds 2 A / cm 2 , for example 2.5 A
There is a problem that emission deterioration is large in high current density operation of / cm 2 . Further, in the application of Japanese Patent Application No. 60-160851, by containing 0.1 to 20% by weight of a rare earth metal oxide in the electron emitting material layer, oxidation of the substrate can be prevented as in the second conventional example. The technique of dispersing the intermediate layer is shown. In this case as well,
Emission deterioration can be reduced even at high current density operation of 2 A / cm 2 . However, in high current density operation of 2 A / cm 2 or more, Joule heat due to the current flowing through the electron emitting material layer causes significant evaporation of barium, which may deteriorate the electron emitting characteristics.
この発明は2A/cm2以上の高電流密度動作においても、長
時間にわたって安定したエミッション特性を有する電子
管用陰極を得ることを目的とする。It is an object of the present invention to obtain a cathode for an electron tube which has stable emission characteristics for a long time even in a high current density operation of 2 A / cm 2 or more.
この発明に係る電子管用陰極は、主成分がニッケルから
なり少量の還元剤を含む基体上に、少なくともバリウム
を含むアルカリ土類金属酸化物を主成分とし、これに酸
化スカンジウム0.1〜20重量％と、シリコン，チタン，
バナジウム，クロム，鉄，ニオブ，ハフニウム，タンタ
ル，モリブデン，タングステンの酸化物のうちの少なく
とも１種とを含んだ電子放射物質層を被着させたもので
ある。The cathode for an electron tube according to the present invention has a main component made of nickel on a substrate containing a small amount of a reducing agent, an alkaline earth metal oxide containing at least barium as a main component, and scandium oxide in an amount of 0.1 to 20% by weight. , Silicon, titanium,
An electron emitting material layer containing at least one of oxides of vanadium, chromium, iron, niobium, hafnium, tantalum, molybdenum, and tungsten is deposited.
この発明においては、電子放射物質層中に含有された酸
化スカンジウムが、電子放射物質層を基体に被着形成す
る際の活性化時にアルカリ土類金属の炭酸塩が分解する
際、あるいは陰極としての動作中に酸化バリウムが解離
反応を起こす際に基体が酸化する反応を防止するととも
に、電子放射物質層中への基体に含有された還元性元素
の拡散を適度に制御し、還元性元素による複合酸化物か
らなる中間層が基体と電子放射物質層との界面近傍に集
中的に形成されることを防止し、中間層を電子放射物質
層内に分散させ、又、上記電子放射物質層中に含有され
た上記耐熱酸化物が、バリウムの蒸発を抑制する。In the present invention, scandium oxide contained in the electron-emitting substance layer is used when the alkaline earth metal carbonate decomposes during activation when the electron-emitting substance layer is deposited on the substrate, or as a cathode. This prevents the oxidation of the substrate when the barium oxide undergoes a dissociation reaction during operation, and controls the diffusion of the reducing element contained in the substrate into the electron-emitting material layer appropriately, thereby forming a composite with the reducing element. It is possible to prevent the intermediate layer made of an oxide from being intensively formed in the vicinity of the interface between the substrate and the electron-emitting substance layer, disperse the intermediate layer in the electron-emitting substance layer, and The contained refractory oxide suppresses the evaporation of barium.
以下に、この発明の一実施例を第１図に基づいて説明す
る。この図において、１は主成分がニッケルからなる基
体であり、この基体１中にはSi,Mgなどの還元剤が含有
されている。2aは基体１の底部上面に被着された電子放
射物質層であり、具体的にはバリウム，ストロンチウ
ム，カルシウムの三元酸化物に酸化スカンジウム粉末と
酸化チタンなど上記耐熱酸化物を含んだものである。上
記バリウムなどのアルカリ土類金属酸化物は、はじめ炭
酸塩で混合し、従来と同様に、炭酸塩から酸化物への分
解過程及び酸化物の一部を還元する活性化過程を経る。An embodiment of the present invention will be described below with reference to FIG. In this figure, 1 is a substrate whose main component is nickel, and this substrate 1 contains a reducing agent such as Si and Mg. Reference numeral 2a is an electron emitting material layer deposited on the upper surface of the bottom of the substrate 1, specifically, a ternary oxide of barium, strontium, and calcium containing scandium oxide powder and the above heat-resistant oxide such as titanium oxide. is there. The above-mentioned alkaline earth metal oxide such as barium is first mixed with a carbonate, and then undergoes a decomposition process from a carbonate to an oxide and an activation process for reducing a part of the oxide as in the conventional case.
第３図は、第１の具体例としてバリウム，ストロンチウ
ム，カルシウムの酸化物に酸化スカンジウム（Sc2O3）
を４重量％，酸化チタン（TiO2）を４重量％、第２の具
体例として酸化スカンジウム（Sc2O3）を４重量％，酸
化クロム（Cr2O3）を４重量％含むもの（ｂ）の電子管
用陰極を上記の方法で作成し、この電子管用陰極を用い
て２極真空管を作成し、2.5A/cm2の電流密度で動作させ
て寿命試験を行った場合のエミッション電流の変化を調
べた結果を示したものである。なお、図中には酸化スカ
ンジウム（SC2O3）を含有しないもの（ｄ）、及び酸化
スカンジウム（Sc2O3）を４重量％含むもの（ｃ）を合
わせて示してある。FIG. 3 shows, as a first specific example, oxides of barium, strontium, and calcium, and scandium oxide (Sc 2 O 3 )
4% by weight, titanium oxide (TiO 2 ) 4% by weight, as a second specific example scandium oxide (Sc 2 O 3 ) 4% by weight, chromium oxide (Cr 2 O 3 ) 4% by weight ( The cathode current for electron tube of b) was created by the above-mentioned method, and the cathode current for electron tube was used to create a two-electrode vacuum tube, which was operated at a current density of 2.5 A / cm 2 to perform the life test. The result of examining the change is shown. In addition, in the figure, those containing no scandium oxide (SC 2 O 3 ) (d) and those containing 4% by weight scandium oxide (Sc 2 O 3 ) (c) are also shown.
Sc2O3を含有しないもの（ｄ），Sc2O3のみ４重量％含む
もの（ｃ）に比較して、Sc2O3に加えてTi2O3あるいはCr
2O3（a,b）はエミッション劣化が少ない。添加するSc2O
3，Ti2O3，Cr2O3の量に関して種々実験を行った結果、
添加するSc2O3量は0.1〜20重量％がよく、又TiO2，Cr2O
3は0.05〜10重量％がよい。さらに、TiO2，Cr2O3以外に
添加する酸化物としては、酸化シリコン，酸化バナジウ
ム，酸化鉄，酸化ニオブ，酸化ハフニウム，酸化タンタ
ル，酸化モリブデン，酸化タングステンなどが適当であ
る。Compared to the one containing no Sc 2 O 3 (d) and the one containing only 4 wt% Sc 2 O 3 (c), in addition to Sc 2 O 3 , Ti 2 O 3 or Cr
Emission deterioration of 2 O 3 (a, b) is small. Sc 2 O to be added
As a result of various experiments on the amounts of 3 , Ti 2 O 3 and Cr 2 O 3 ,
The amount of Sc 2 O 3 added is preferably 0.1 to 20% by weight, and TiO 2 , Cr 2 O
3 is preferably 0.05 to 10% by weight. Further, as oxides added in addition to TiO 2 and Cr 2 O 3 , silicon oxide, vanadium oxide, iron oxide, niobium oxide, hafnium oxide, tantalum oxide, molybdenum oxide, tungsten oxide and the like are suitable.
上述のように、Sc2O3に加えて他の酸化物を添加した場
合、従来に比較して優れた特性が得られるのは、以下の
理由によると考えられる。Sc2O3は、電子管用陰極の動
作とともに、その一部が解離して基体１の表面から約20
μｍの深さまで拡散する。一方、基体１内の還元剤Si,M
gはScとは逆に表面へ拡散し、表面でBaOと反応し、遊離
Baをつくるが、又BaSiO3を生成する。このBaSiO3は中間
層と呼ばれ、還元剤のBaOとの反応を阻害する。しか
し、この発明では、基体１の表層に存在するScによって
上記中間層を分解するので、還元剤Siは電子放射物質層
2a内へさらに移動でき、電子放射に寄与する。添加した
TiO2やCr2O3はBaの蒸発を抑制するものと考えられる。
この電子管用陰極の表面をオージェ分光分析装置で観察
したところ、TiO2やCr2O3の粒子の上にBaが十分に存在
していることがわかった。すなわち、電子放射物質層2a
を高電流が流れると、ジュール熱により電子放射物質層
2aの温度上昇をひきおこし、その結果Baの蒸発が増加す
ることになる。Baの蒸発増大は必然的に短寿命につなが
るので避けなければならない。本実施例では、TiO2やCr
2O3などの酸化物が、Baを吸着する機能を有するものと
思われる。As described above, when other oxides are added in addition to Sc 2 O 3 , it is considered that excellent characteristics are obtained as compared with the conventional one, for the following reason. Sc 2 O 3 is separated from the surface of the substrate 1 by a part of the Sc 2 O 3 as the cathode for an electron tube operates.
Diffuse to a depth of μm. On the other hand, the reducing agent Si, M in the substrate 1
Contrary to Sc, g diffuses to the surface, reacts with BaO on the surface, and is released.
Ba is produced, but BaSiO 3 is also produced. This BaSiO 3 is called an intermediate layer and inhibits the reaction of the reducing agent with BaO. However, in the present invention, since the intermediate layer is decomposed by Sc existing in the surface layer of the substrate 1, the reducing agent Si is used as the electron emitting material layer.
It can move further into 2a and contribute to electron emission. Added
TiO 2 and Cr 2 O 3 are considered to suppress the evaporation of Ba.
Observation of the surface of the cathode for an electron tube with an Auger spectroscopic analyzer revealed that Ba was sufficiently present on the particles of TiO 2 and Cr 2 O 3 . That is, the electron emitting material layer 2a
When a high current flows through the electron emission material layer due to Joule heat
The temperature rise of 2a is caused, and as a result, the evaporation of Ba increases. Increased evaporation of Ba inevitably leads to short life and must be avoided. In this example, TiO 2 and Cr
It seems that oxides such as 2 O 3 have a function of adsorbing Ba.
なお、Sc2O3の量が20重量％を越えると、初期電子放射
量が低く、又この量が0.1％以下であると、中間層形成
の抑制に効果的でない。When the amount of Sc 2 O 3 exceeds 20% by weight, the initial electron emission amount is low, and when this amount is 0.1% or less, it is not effective in suppressing the formation of the intermediate layer.
又、添加するTiO2やCr2O3などの酸化物は0.05〜10重量
％が良い。この量が10重量％を越えると、初期電子放射
量が低下し又、この量が0.05％以下であると、Ba蒸発の
抑制に効果的でない。Further, the added oxide such as TiO 2 or Cr 2 O 3 is preferably 0.05 to 10% by weight. When this amount exceeds 10% by weight, the initial electron emission amount decreases, and when this amount is 0.05% or less, it is not effective in suppressing Ba evaporation.
この発明に係る電子管用陰極は以上に述べたように、ニ
ッケルからなり少量の還元剤を含む基体上に、少なくと
もバリウムを含むアルカリ土類金属酸化物を主成分と
し、これに酸化スカンジウム0.1〜20重量％と、シリコ
ン，チタン，バナジウム，クロム，鉄，ニオブ，ハフニ
ウム，タンタル，モリブデン，タングステンの酸化物か
ら選ばれた少なくとも１種を含ませた電子放射物質層を
被着したので、通常の活性化工程のみで、2A/cm2以上の
高電流密度による動作の下での長寿命を確実に実現でき
るという効果を有する。As described above, the cathode for an electron tube according to the present invention comprises, on a substrate made of nickel and containing a small amount of a reducing agent, an alkaline earth metal oxide containing at least barium as a main component, to which scandium oxide 0.1 to 20 is added. Since the electron-emitting material layer containing at least one selected from the oxides of silicon, titanium, vanadium, chromium, iron, niobium, hafnium, tantalum, molybdenum, and tungsten by weight% is applied, This has the effect of reliably achieving a long life under the operation with a high current density of 2 A / cm 2 or more only by the chemical conversion step.
第１図はこの発明の一実施例による電子管用陰極を示す
断面図、第２図は従来の電子管用陰極を示す断面図、第
３図は電子管用陰極を用いた２極真空管の寿命試験時間
とエミッション電流との関係を示す図である。 なお各図中、同一符号は同一又は相当部分を示す。1 is a sectional view showing a cathode for an electron tube according to an embodiment of the present invention, FIG. 2 is a sectional view showing a conventional cathode for an electron tube, and FIG. 3 is a life test time of a bipolar vacuum tube using the cathode for an electron tube. It is a figure which shows the relationship between and emission current. In each drawing, the same reference numerals indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石田 誠子 神奈川県鎌倉市大船２丁目14番40号 三菱 電機株式会社商品研究所内 (72)発明者 斉藤 正人 神奈川県鎌倉市大船２丁目14番40号 三菱 電機株式会社商品研究所内 (56)参考文献 特開 昭62−22347（ＪＰ，Ａ) 特開 昭48−70466（ＪＰ，Ａ) 特開 昭62−165832（ＪＰ，Ａ) 特公 昭60−55940（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiko Ishida 2-14-40 Ofuna, Kamakura-shi, Kanagawa Mitsubishi Electric Corporation Product Research Laboratory (72) Masato Saito 2-14-40 Ofuna, Kamakura-shi, Kanagawa (56) Reference JP 62-22347 (JP, A) JP 48-70466 (JP, A) JP 62-165832 (JP, A) JP 60- 55940 (JP, B2)
Claims (2)
含む基体上に、少なくともバリウムを含むアルカリ土類
金属酸化物を主成分とし、酸化スカンジウム0.1〜20重
量％と、シリコン，チタン，バナジウム，クロム，鉄，
ニオブ，ハフニウム，タンタル，モリブデン，およびタ
ングステンから選ばれた少なくとも１種の酸化物0.05〜
10重量％とを含んだ電子放射物質層を被着したことを特
徴とする電子管用陰極。1. A substrate whose main component is nickel and which contains a small amount of a reducing agent, and which has an alkaline earth metal oxide containing at least barium as a main component and which has 0.1 to 20% by weight of scandium oxide, silicon, titanium and vanadium. , Chrome, iron,
At least one oxide selected from niobium, hafnium, tantalum, molybdenum, and tungsten 0.05 to
A cathode for an electron tube, characterized in that an electron emitting material layer containing 10% by weight is deposited.
の少なくとも一方であることを特徴とする特許請求の範
囲第１項記載の電子管用陰極。2. The cathode for an electron tube according to claim 1, wherein the oxide is at least one of oxides of titanium and chromium.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9787388A JPH0787072B2 (en) | 1988-04-19 | 1988-04-19 | Electron tube cathode |
| TW77107728A TW205600B (en) | 1988-04-19 | 1988-11-08 | |
| KR1019880016941A KR910009660B1 (en) | 1988-02-23 | 1988-12-19 | Cathode for electron tube |
| US07/307,709 US4924137A (en) | 1988-02-23 | 1989-02-08 | Cathode for electron tube |
| DE68917174T DE68917174T2 (en) | 1988-02-23 | 1989-02-13 | Cathode for an electron tube. |
| EP89301345A EP0330355B1 (en) | 1988-02-23 | 1989-02-13 | Cathode for electron tube |
| CA000591597A CA1327145C (en) | 1988-02-23 | 1989-02-21 | Cathode for electron tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9787388A JPH0787072B2 (en) | 1988-04-19 | 1988-04-19 | Electron tube cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01267926A JPH01267926A (en) | 1989-10-25 |
| JPH0787072B2 true JPH0787072B2 (en) | 1995-09-20 |
Family
ID=14203865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9787388A Expired - Lifetime JPH0787072B2 (en) | 1988-02-23 | 1988-04-19 | Electron tube cathode |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0787072B2 (en) |
| TW (1) | TW205600B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2876591B2 (en) * | 1996-11-29 | 1999-03-31 | 三菱電機株式会社 | Cathode for electron tube |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4870466A (en) * | 1971-12-23 | 1973-09-25 | ||
| JPS555661B2 (en) * | 1972-05-12 | 1980-02-08 | ||
| JPS5920941A (en) * | 1982-07-27 | 1984-02-02 | Toshiba Corp | Cathode structure |
| FR2550167B1 (en) * | 1983-08-02 | 1985-12-06 | Synthese Creation Sarl | PACKAGING AND HANDLING DEVICE FOR AN OBJECT WHICH MUST REMAIN AWAY FROM DIRECT MANUAL CONTACT, AND THE ASSEMBLY INCLUDING SUCH AN OBJECT |
| JPS6222347A (en) * | 1985-07-19 | 1987-01-30 | Mitsubishi Electric Corp | Cathode for electron tube |
| JPS62165832A (en) * | 1986-01-18 | 1987-07-22 | Mitsubishi Electric Corp | Cathode for electron tube |
-
1988
- 1988-04-19 JP JP9787388A patent/JPH0787072B2/en not_active Expired - Lifetime
- 1988-11-08 TW TW77107728A patent/TW205600B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW205600B (en) | 1993-05-11 |
| JPH01267926A (en) | 1989-10-25 |
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