JPH0776419B2 - Sputtering film forming method and film forming apparatus - Google Patents
Sputtering film forming method and film forming apparatusInfo
- Publication number
- JPH0776419B2 JPH0776419B2 JP23780387A JP23780387A JPH0776419B2 JP H0776419 B2 JPH0776419 B2 JP H0776419B2 JP 23780387 A JP23780387 A JP 23780387A JP 23780387 A JP23780387 A JP 23780387A JP H0776419 B2 JPH0776419 B2 JP H0776419B2
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- Prior art keywords
- film
- sputtering
- target
- substrate
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 産業上の利用分野 この発明はスパッタ成膜方法及び装置に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a sputtering film forming method and apparatus.
従来の技術 金属の窒化物や酸化物の成膜には、スパッタ成膜中にタ
ーゲット物質とスパッタガス成分とを化学反応させてそ
れらの化合物薄膜を形成するリアクティブスパッタが広
く用いられている（例えば、早川茂他「薄膜化技術」
（S57.12.1），共立出版,P18）。2. Description of the Related Art Reactive sputtering, in which a target material and a sputtering gas component are chemically reacted with each other to form a thin film of these compounds during sputtering film formation, is widely used for forming a metal nitride or oxide film ( For example, Shigeru Hayakawa et al. "Thin film technology"
(S57.12.1), Kyoritsu Shuppan, P18).
発明が解決しようとする問題点 従来の技術の問題点を、光ディスクの記録膜であるTeOx
膜のスパッタ成膜を例にとって説明する。Problems to be Solved by the Invention
The film formation by sputtering will be described as an example.
第５図は公知のロードロック式スパッタ装置である。１
は未成膜基板２の入側ロードロック室、３はスパッタ
室、４は成膜済基板５の出側ロードロック室である。6,
7,8,9は前記基板を通すための公知のゲートバルブであ
る。10はTeターゲット、11は公知のマグネットである。
12はターゲットに負の直流電圧を与えるための可変電圧
電源、13はその可変電圧電源の出力電圧を制御する電力
制御器である。14は基板15を保持して図示しない手段に
より回転させる回転軸である。FIG. 5 shows a known load lock type sputtering apparatus. 1
Is a load lock chamber for the non-deposited substrate 2 on the input side, 3 is a sputter chamber, and 4 is a load lock chamber for the outgoing side of the deposited substrate 5. 6,
Reference numerals 7, 8 and 9 are known gate valves for passing the substrate. 10 is a Te target, and 11 is a known magnet.
Reference numeral 12 is a variable voltage power source for giving a negative DC voltage to the target, and 13 is a power controller for controlling the output voltage of the variable voltage power source. Reference numeral 14 is a rotary shaft that holds the substrate 15 and rotates it by means not shown.
16はArとO2スパッタ室３に供給する管である。なお本図
においてはスパッタ装置に通常必要な公知の排気及びリ
ーク手段、基板移送手段、ターゲット冷却手段、膜厚計
等は省略してある。Reference numeral 16 is a tube for supplying Ar and O 2 sputtering chamber 3. Incidentally, in this figure, well-known exhaust and leak means, substrate transfer means, target cooling means, film thickness meter and the like which are usually necessary for the sputtering apparatus are omitted.
次に動作を説明する。ターゲット10への電力（電圧）の
印加は第６図に示すように矩形波状となる。例えば基板
15への成膜が終了した時点をＢとすると、次のＡまでの
間に「基板15が回転軸14から外されてゲートバルブ８を
通って出側ロードロック室４に移送され、基板２がゲー
トバルブ７を通ってスパッタ室３に移送されて回転軸14
に保持されて回転する」という動作が行なわれる。以上
の動作中に基板５及び２に膜がつかずしかも放電が停止
しない低パワレベルに前記電力制御器13は可変電圧電源
12の出力を制御する。Next, the operation will be described. Application of electric power (voltage) to the target 10 has a rectangular wave shape as shown in FIG. Substrate
When the time when the film formation on 15 is completed is B, by the time until the next A, “the substrate 15 is removed from the rotation shaft 14 and transferred to the exit side load lock chamber 4 through the gate valve 8 and the substrate 2 Is transferred to the sputter chamber 3 through the gate valve 7 and the rotating shaft 14
Is held and rotated. " During the above operation, the power controller 13 sets the variable voltage power source to a low power level in which the film is not attached to the substrates 5 and 2 and the discharge is not stopped.
Control 12 outputs.
ＡからＢの間は前記動作制御器13は可変電圧電源12の出
力を基板に成膜を行なう十分な高パワレベルに制御す
る。During the period from A to B, the operation controller 13 controls the output of the variable voltage power source 12 to a sufficiently high power level for forming a film on the substrate.
以上のようにターゲット10へ電力を印加するとターゲッ
ト10の表面温度は第７図に示すように、基板への膜の堆
積が始まる時は低く、膜が堆積するにつれてすなわち時
間経過と共に指数関数的に上昇し、また成膜が終了する
と指数関数的に下降して鋸歯状に変化する。温度の上昇
及び下降時の時定数はターゲット10への印加電力に対す
るターゲットの熱容量が大きいほど大きくなり、温度の
上り方及び下り方が遅くなる。ターゲット10の表面温度
が低い時は、反応性ガスであるO2との反応があまり活発
に行なわれないのでターゲット表面に形成される酸化層
の酸素濃度は薄くなり、表面温度が高い時はその逆のタ
ーゲット表面の酸化層の酸素濃度は濃くなる。酸化され
たTeターゲットをArイオンでスパッタする時Arイオンの
エネルギはTeと酸素を切り離すことにも消費されるので
酸化層の酸素濃度が濃くなるほどTeのスパッタレートは
低くなる。Teのスパッタレートが低くなると基板表面で
Teと酸素が反応する機会が増加するので膜に含まれる酸
素濃度は濃くなり、逆にスパッタレートが高くなると逆
に膜に含まれる酸素濃度は薄くなる。When power is applied to the target 10 as described above, the surface temperature of the target 10 is low at the beginning of the film deposition on the substrate, as shown in FIG. It rises, and when film formation is completed, it falls exponentially and changes into a sawtooth shape. The time constant when the temperature rises and falls increases as the heat capacity of the target with respect to the power applied to the target 10 increases, and the rise and fall of the temperature become slower. When the surface temperature of the target 10 is low, the reaction with the reactive gas O 2 is not so active that the oxygen concentration of the oxide layer formed on the target surface becomes thin, and when the surface temperature is high, On the contrary, the oxygen concentration of the oxide layer on the target surface becomes high. When the oxidized Te target is sputtered with Ar ions, the energy of Ar ions is also consumed to separate Te and oxygen, so the higher the oxygen concentration in the oxide layer, the lower the Te sputtering rate. When the sputtering rate of Te becomes low,
Since the chances of Te and oxygen reacting with each other increase, the oxygen concentration contained in the film becomes high, and conversely when the sputter rate becomes high, the oxygen concentration contained in the film becomes low.
以上のようにして樹脂基板に形成されたTeOx膜をAES分
析した結果を第８図に示す。TeOx膜の基板との界面部及
びその近傍で酸素濃度が低くなっていることがわかる。
第８図のｃは樹脂基板に含まれるカーボンである。FIG. 8 shows the result of AES analysis of the TeOx film formed on the resin substrate as described above. It can be seen that the oxygen concentration is low at and near the interface between the TeOx film and the substrate.
In FIG. 8, c is carbon contained in the resin substrate.
TeOx膜の酸素濃度が低くなると大気中の水分等によって
膜が腐食されて光ディスクの記録膜としての特性が劣化
し、正常に信号の記録あるいは再生ができなくなるとい
う問題がある。When the oxygen concentration of the TeOx film becomes low, there is a problem that the film is corroded by moisture in the atmosphere and the characteristics of the optical disk as a recording film are deteriorated, and normal signal recording or reproduction cannot be performed.
この問題を解決するためにターゲット10と基板の間にシ
ャッタを設け、ターゲット10に印加する電力を常時高パ
ワレベルに維持してターゲットの表面温度を常時一定に
保つと共に、基板の回転軸14への脱着及び基板の移送時
に膜が基板へつかなくする方法もあるが、ターゲット10
の利用効率が悪くなると共に、消耗が早くなり、またシ
ャッタに膜が厚く付着するのでシャッタからその膜が剥
離しやすくなり、スパッタ室３内がその剥離した膜で汚
染され膜に欠陥が発生するという問題があって実用的で
はなかった。In order to solve this problem, a shutter is provided between the target 10 and the substrate, the power applied to the target 10 is constantly maintained at a high power level to keep the target surface temperature constant, and the rotation axis 14 of the substrate is There is also a method to prevent the film from sticking to the substrate during desorption and transfer of the substrate.
Is used less efficiently, the consumption is faster, and the film is thickly attached to the shutter, so that the film is easily peeled off from the shutter, and the inside of the sputtering chamber 3 is contaminated with the peeled film to cause a defect in the film. There was a problem that was not practical.
そこで、本発明は例えば、TeOx膜においては膜の厚み方
向に酸素濃度の変化しない、すなわちリアクティブスパ
ッタにおいて膜の厚み方向に組成比が変化しないように
するものである。Therefore, the present invention is, for example, to prevent the oxygen concentration from changing in the thickness direction of the TeOx film, that is, the composition ratio not to change in the thickness direction of the film in reactive sputtering.
問題点を解決するための手段 そして上記問題点を解決する本発明の技術的な手段は、
基板に膜が堆積されるにつれてスパッタ電力を増加させ
るものである。Means for Solving the Problems And technical means of the present invention for solving the above problems,
It increases the sputter power as the film is deposited on the substrate.
作用 この技術的手段による作用は次のようになる。Action The action of this technical means is as follows.
スパッタ電力を増加させると、前記したターゲット表面
の温度上昇に伴うTeのスパッタレートの低下が相殺さ
れ、基板へのTeの堆積速度は略一定となる。そうすると
基板表面でTeと酸素が反応する機会が略一定となるので
膜に含まれる酸素濃度も略一定となる。When the sputtering power is increased, the decrease in the sputtering rate of Te due to the increase in the temperature of the target surface is offset, and the deposition rate of Te on the substrate becomes substantially constant. Then, the opportunity for Te and oxygen to react with each other on the substrate surface becomes substantially constant, so that the concentration of oxygen contained in the film also becomes substantially constant.
その結果、膜の厚み方向に酸素濃度の変化のない成膜が
可能となる。As a result, it is possible to form a film without changing the oxygen concentration in the film thickness direction.
実施例 以下、本発明の一実施例を添付図面にもとづいて説明す
る。Embodiment One embodiment of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明の一実施例を示す図で、従来例を示す第
５図と同一構成要素は同一番号で示すものである。FIG. 1 is a diagram showing an embodiment of the present invention, in which the same components as in FIG. 5 showing a conventional example are designated by the same reference numerals.
従来例と異なるところは電力制御器20は可変電圧電源12
からターゲット10に供給される電力を、第２図に示すよ
うに成膜開始から略指数関数的に増加させるように制御
することにある。The difference from the conventional example is that the power controller 20 has a variable voltage power supply 12
The purpose is to control the electric power supplied from the target 10 to the target 10 so as to increase substantially exponentially from the start of film formation as shown in FIG.
スパッタ電力を増加させることによってターゲット10が
Teである場合は、Teのスパッタレートが高くなり基板15
へのTeの堆積速度が大きくなる。そうすると基板15の表
面でのTeと酸素が反応する機会が減少するので膜に含ま
れる酸素濃度は低くなり、従来の酸素濃度変化を相殺す
ることになる。したがってこのようにして形成されたTe
Ox膜21は第３図に示すAES分析結果からわかるように膜
の厚み方向に酸素濃度の変化はみられない。By increasing the sputtering power, the target 10
In the case of Te, the sputtering rate of Te increases and the substrate 15
The deposition rate of Te on the surface increases. Then, the chances of Te and oxygen reacting with each other on the surface of the substrate 15 are reduced, so that the concentration of oxygen contained in the film is lowered and the conventional change in oxygen concentration is offset. Therefore, the Te thus formed is
As can be seen from the AES analysis result shown in FIG. 3, the Ox film 21 shows no change in oxygen concentration in the film thickness direction.
次に本発明の他の実施例について説明する。Next, another embodiment of the present invention will be described.
前記実施例においてターゲット10に供給される電力を略
指数関数的に増加させるように制御したが、指数関数を
折線近似してもよい。そうすると回路構成を簡単にする
ことができる。またそれほど厳密に組成比の均一性が要
求されない場合は、第４図に示すように１本の直線で近
似してもよい。Although the electric power supplied to the target 10 is controlled to increase in a substantially exponential function in the above-described embodiment, the exponential function may be approximated by a broken line. Then, the circuit configuration can be simplified. Further, when the composition ratio is not required to be so strict, it may be approximated by one straight line as shown in FIG.
またターゲット10に電力を供給する電源は直流に限るも
のでなく高周波電源であってもよい。The power supply for supplying power to the target 10 is not limited to direct current, and may be a high frequency power supply.
また低パワレベルにおいても基板の回転軸14への脱着及
び基板の移送時に基板への膜付着が無視できない場合は
シャッタを設けてもよい。Further, even at a low power level, a shutter may be provided if the attachment / detachment of the substrate to / from the rotary shaft 14 and the film adhesion to the substrate cannot be ignored during the transfer of the substrate.
スパッタ方式はマグネトロンスパッタに限るものでな
く、イオン源から発生するイオンを加速してターゲット
に衝突させてスパッタを行なう公知のいわゆるイオンビ
ームスパッタにおいても、イオンがターゲットをスパッ
タする電力を制御することにより上記効果を得ることが
できる。The sputtering method is not limited to magnetron sputtering, and even in the known so-called ion beam sputtering in which ions generated from an ion source are accelerated and collided with a target to perform sputtering, by controlling the electric power with which the ions sputter the target. The above effect can be obtained.
またターゲット材料はTeに限るものでなく他の金属ある
いは合金、非金属、化合物であってもよい。Further, the target material is not limited to Te, and may be other metal or alloy, nonmetal, or compound.
また不活性ガスはArに限るものでなく、活性ガスも酸素
に限るものではない。The inert gas is not limited to Ar, and the active gas is not limited to oxygen.
発明の効果 本発明はリアクティブスパッタ成膜において、基板に膜
が堆積されるにつれてスパッタ電力を増加させるもので
ある。EFFECTS OF THE INVENTION The present invention is to increase sputtering power in reactive sputtering film formation as a film is deposited on a substrate.
スパッタ電力を増加させることによってターゲットのス
パッタレートが高くなり、基板へのターゲット材料の堆
積速度が大きくなる。そうすると基板表面でターゲット
材料と反応性ガスが反応する機会が減少するので膜に含
まれる反応性ガス成分濃度は薄くなってくる。Increasing the sputter power increases the sputter rate of the target and increases the rate of target material deposition on the substrate. Then, the chances that the target material reacts with the reactive gas on the surface of the substrate decreases, so that the concentration of the reactive gas component contained in the film becomes thin.
その結果、元来スパッタ電力印加によるターゲット温度
変化に伴なうスパッタレート低下によって発生する反応
性ガス成分濃度の増加を相殺して膜の厚み方向に組成比
の変化しない成膜が可能となり、例えば光ディスク記録
膜であるTeOx膜においては耐食性を向上させることがで
きる。As a result, it is possible to offset the increase in the reactive gas component concentration caused by the decrease in the sputter rate accompanying the change in the target temperature due to the sputtering power application and to form a film in which the composition ratio does not change in the thickness direction of the film. Corrosion resistance can be improved in a TeOx film which is an optical disk recording film.
第１図は本発明の一実施例を概念的に示す正面図、第２
図は第１図のターゲットに印加される電力の変化状態説
明図、第３図は本発明を適用して形成された膜のAES分
析結果説明図、第４図はその他の実施例における電力の
変化状態説明図、第５図は従来例を概念的に示す正面
図、第６図は第５図のターゲットに印加される電力の変
化状態説明図、第７図は第５図のターゲット表面温度の
変化状態説明図、第８図は従来の方法で形成された膜の
AES分析結果説明図である。 ３……スパッタ室、10……ターゲット、11……マグネッ
ト、12……可変電圧電源、15……基板、20……電力制御
器。FIG. 1 is a front view conceptually showing one embodiment of the present invention, and FIG.
FIG. 4 is a diagram for explaining the change state of the power applied to the target in FIG. 1, FIG. 3 is a diagram for explaining the AES analysis result of the film formed by applying the present invention, and FIG. 4 is a diagram for the power in other examples. FIG. 5 is a front view conceptually showing a change state, FIG. 5 is a change state explanatory view of electric power applied to the target of FIG. 5, and FIG. 7 is a target surface temperature of FIG. Fig. 8 is a change state explanatory diagram of Fig. 8 of the film formed by the conventional method.
It is an AES analysis result explanatory drawing. 3 ... Sputtering room, 10 ... Target, 11 ... Magnet, 12 ... Variable voltage power supply, 15 ... Substrate, 20 ... Power controller.
Claims (3)
に膜が堆積されるにつれて、ターゲットの温度上昇に伴
うスパッタレートの低下を相殺するようにスパッタ電力
を増加させて、膜の厚み方向の組成比変化を抑制してな
るスパッタ成膜方法。1. In reactive sputtering film formation, as a film is deposited on a substrate, the sputtering power is increased so as to offset the decrease in the sputter rate accompanying the temperature rise of the target, and the composition ratio in the film thickness direction. A sputtering film forming method that suppresses changes.
給する手段と、前記真空容器中に設けられたターゲット
及び基板と、電力を受けて前記ガスをイオン化し、その
イオンで前記ターゲットをスパッタして、ターゲットか
ら飛び出した粒子を前記基板に膜として堆積させるスパ
ッタ手段と、このスパッタ手段に電力を供給する電力供
給手段と、その電力供給手段から前記スパッタ手段に供
給される電力を、前記基板に膜が堆積されるにつれて増
加させる電力制御手段から構成され、 前記電力制御手段は、膜の厚み方向の組成比変化を抑制
すべく、ターゲットの温度上昇に伴うスパッタレートの
低下を相殺するように電力を増加させることを特徴とす
るスパッタ成膜装置。2. A means for supplying an inert gas and a reactive gas into a vacuum container, a target and a substrate provided in the vacuum container, an electric power to ionize the gas, and the target with the ions. A sputtering means for spattering particles deposited from the target as a film on the substrate, a power supply means for supplying power to the sputtering means, and an electric power supplied from the power supply means to the sputtering means. The power control unit is configured to increase the film as the film is deposited on the substrate, and the power control unit cancels a decrease in the sputtering rate due to a temperature increase of the target in order to suppress a composition ratio change in the thickness direction of the film. A sputtering film forming apparatus characterized by increasing the electric power.
加させることを特徴とする特許請求の範囲第２項記載の
スパッタ成膜装置。3. The sputtering film forming apparatus according to claim 2, wherein the power control means increases the power substantially exponentially.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23780387A JPH0776419B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23780387A JPH0776419B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6479369A JPS6479369A (en) | 1989-03-24 |
| JPH0776419B2 true JPH0776419B2 (en) | 1995-08-16 |
Family
ID=17020644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23780387A Expired - Fee Related JPH0776419B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0776419B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0567954B1 (en) * | 1992-04-27 | 1996-07-31 | Central Glass Company, Limited | Method of forming thin film on substrate by reactive DC sputtering |
| JP5085688B2 (en) | 2010-06-10 | 2012-11-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method of manufacturing nonvolatile semiconductor memory |
| JP6504597B2 (en) * | 2015-02-02 | 2019-04-24 | 国立研究開発法人物質・材料研究機構 | Method of producing bismuth telluride thin film |
| CN106756808B (en) * | 2016-11-29 | 2019-04-02 | 深圳倍声声学技术有限公司 | A method of improving dynamic iron component corrosion resistance |
-
1987
- 1987-09-22 JP JP23780387A patent/JPH0776419B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6479369A (en) | 1989-03-24 |
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