JPH0776149B2 - Diamond synthesis method by vapor phase method - Google Patents
Diamond synthesis method by vapor phase methodInfo
- Publication number
- JPH0776149B2 JPH0776149B2 JP62258291A JP25829187A JPH0776149B2 JP H0776149 B2 JPH0776149 B2 JP H0776149B2 JP 62258291 A JP62258291 A JP 62258291A JP 25829187 A JP25829187 A JP 25829187A JP H0776149 B2 JPH0776149 B2 JP H0776149B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- vapor phase
- particles
- substrate
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は気相法のダイヤモンド合成法に関し、とくに表
面研摩用砥粒として好適な、さらに樹脂、粘土等と混合
成型して切断、研摩用砥石としての使用に好適な多結晶
ダイヤモンドの気相法による合成法に関する。DETAILED DESCRIPTION OF THE INVENTION <Field of Industrial Application> The present invention relates to a vapor phase diamond synthesis method, which is particularly suitable as abrasive grains for surface polishing, and is further mixed and molded with resin, clay, etc. for cutting and polishing. The present invention relates to a method for synthesizing polycrystalline diamond suitable for use as a grindstone by a vapor phase method.
〈従来の技術〉 ダイヤモンドは最も硬い物質として知られ、このため砥
粒として、又は母材物質と混合成型して砥石として広く
使用されている。ダイヤモンドは天然のものゝ外に、例
えば超高圧法等により製造された合成品が多く利用され
ている。これら天然、合成のダイヤモンドを砥粒として
使用する場合、通常大きな粒子の破砕粒、又は単結晶を
使用する。<Prior Art> Diamond is known as the hardest material, and is therefore widely used as an abrasive grain or as a grindstone by mixing and molding with a base material. In addition to natural diamonds, synthetic diamonds produced by, for example, the ultrahigh pressure method are often used. When these natural and synthetic diamonds are used as abrasive grains, crushed grains of large particles or single crystals are usually used.
さらに近年気相法のダイヤモンド合成法が開発された。
この合成法は炭化水素、酸素、窒素等を含む有機化合物
のガスを炭素源として、これに水素ガスを混合し、プラ
ズマ化等の励起状態として、ダイヤモンドを基材上に析
出させる方法である。この場合の析出ダイヤモンドは薄
膜状、あるいは粒状となる。これら薄膜状、あるいは粒
状ダイヤモンドは切削用工具やコーティング用として使
用される。Furthermore, in recent years, a vapor phase diamond synthesis method has been developed.
This synthesis method is a method in which a gas of an organic compound containing hydrocarbons, oxygen, nitrogen and the like is used as a carbon source, hydrogen gas is mixed with this as a carbon source, and diamond is deposited on a substrate in an excited state such as plasma formation. In this case, the deposited diamond is in the form of a thin film or particles. These thin film or granular diamonds are used for cutting tools and coatings.
本発明者らも気相法ダイヤモンドに関するものとして、
SiC粒子を核とした気相合成法により、特殊な形状の多
結晶ダイヤモンドが得られることを確認して特願昭62−
98657、62−98658を、又基体に鉄、コバルト、ニッケ
ル、クロム粒子又はパラジウム、白金、金、イットリウ
ム粒子を分散させることにより、安定した条件でダイヤ
モンドを合成させうるとの知見にもとづいて、特願昭62
−162256および特願昭62−178890を出願した。The present inventors also relate to vapor phase diamond,
It was confirmed that polycrystalline diamond with a special shape could be obtained by a vapor phase synthesis method using SiC particles as a core.
Based on the finding that 98657 and 62-98658 can be synthesized under stable conditions by dispersing iron, cobalt, nickel, chromium particles or palladium, platinum, gold, yttrium particles in the substrate, Wish 62
-162256 and Japanese Patent Application No. 62-178890 were filed.
〈発明が解決しようとする問題点〉 従来の砥粒用又は砥石原料用としてのダイヤモンドには
次のような問題点がある。<Problems to be Solved by the Invention> Conventional diamonds for abrasive grains or raw materials for grinding stones have the following problems.
まず破砕粒は不定形で鋭いエッジを有する場合が多いた
め、これを砥粒として研削する場合にはエッヂが被研削
物に深い傷を作り、この傷を除去するのに更に研摩を必
要とする。First of all, crushed grains are often irregular and have sharp edges, so when grinding them as abrasive grains, the edge makes deep scratches on the object to be ground, and further polishing is required to remove these scratches. .
又単結晶粒は、結晶粒が自形面を有するために切れ味が
悪く、いわゆる重研削用に適する。又母材物質とゝもに
成型して砥石として使用する場合、この単結晶はマトリ
ックスである母材物質における保持性が充分でない。こ
のため一般には単結晶表面をマトリックスになじめ易い
層で被覆し、又は単結晶に対して表面処理をして、単結
晶のマトリックスの中の保持性を改善している。具体的
な一例としては、レジノイド用ダイヤモンド粒にニッケ
ルを無電解めっきをして（50〜60重量％）、マトリック
スに対するなじみ性を良好にし、粒のマトリックスに対
するアンカー効果を改善するとゝもに切削時の発生熱拡
散性を改善させている。Further, the single crystal grains have poor sharpness because the crystal grains have a self-shaped surface and are suitable for so-called heavy grinding. Further, when used as a grindstone by molding it into a matrix material, this single crystal does not have sufficient retention in the matrix material matrix. For this reason, generally, the surface of the single crystal is coated with a layer that easily adapts to the matrix, or the single crystal is surface-treated to improve the retention of the single crystal in the matrix. As a concrete example, nickel is electrolessly plated on resinoid diamond particles (50 to 60% by weight) to improve the compatibility with the matrix and to improve the anchor effect of the particle on the matrix during cutting. The generated heat diffusivity is improved.
然しこのような処理は、砥粒、砥石の製造コストを増加
させ又切削時に被覆層による切削性能低下をもたらす。However, such a treatment increases the manufacturing cost of the abrasive grains and the grindstone, and causes a decrease in cutting performance due to the coating layer during cutting.
さらに特願昭62−98657、98658に記載の多結晶ダイヤモ
ンド粒子は、SiCを核として製造する必要があり、また
特願昭62−162256、62−178890の気相法により製造され
るダイヤモンド粒は自形の発現した６〜８面体粒であ
り、砥粒や砥石原料とする場合に、次にのべるような問
題点がある。Furthermore, the polycrystalline diamond particles described in Japanese Patent Application Nos. 62-98657 and 98658 need to be produced with SiC as a nucleus, and the diamond particles produced by the vapor phase method of Japanese Patent Applications 62-162256 and 62-178890 are It is a 6-8 octahedron grain in which the automorphism appears, and when it is used as an abrasive grain or a grindstone raw material, it has the following problems.
〈問題点を解決するための手段〉 本発明者らは砥粒としての研削性能にすぐれ、又母材物
質とゝもに砥石とした場合もマトリックスである母材物
質ともなじみ易く、したがって表面処理等を必要としな
いダイヤモンド粒子をうる目的で研究の結果、本発明を
完成した。<Means for Solving Problems> The inventors of the present invention have excellent grinding performance as abrasive grains, and even when a base material and a grindstone are used, they are easily compatible with the matrix base material, and therefore surface treatment is performed. As a result of research aimed at obtaining diamond particles that do not require the like, the present invention has been completed.
即ち本発明は有機化合物から気相法によりダイヤモンド
を合成するに際し、基材上にホウ素、アルミニウム、銅
から選ばれた少なくとも一種が蒸着された、ダイヤモン
ド生成核が点在して生成し得る基材を用いることによ
り、基材表面にダイヤモンド粒を生成させることを特徴
とする基相法によるダイヤモンド合成法に関する。That is, the present invention, when synthesizing diamond from an organic compound by a vapor phase method, at least one selected from boron, aluminum, and copper is vapor-deposited on a substrate, and a substrate capable of forming diamond-forming nuclei scattered around. The present invention relates to a method for synthesizing diamond by a base phase method, which comprises forming diamond grains on the surface of a base material by using.
本発明の方法により製造されたダイヤモンドは多結晶で
表面に多数の角錐状突起を有する金平糖状粒子で砥粒又
は砥石材料として好適であり、本発明の方法により再現
性よく製造しうる。The diamond produced by the method of the present invention is a polycrystal, and is composed of spinach-like particles having a large number of pyramidal protrusions on the surface, and is suitable as an abrasive grain or a grindstone material, and can be produced with good reproducibility by the method of the present invention.
本発明により製造された多結晶ダイヤモンド粒子は一つ
一つの粒子が独立しているもの、或いは複数個が結合し
ているものゝ両方が存在する。そしていずれの場合でも
一個の粒子はアスペクト比１〜1.3、粒子径0.3〜200μ
ｍ、角錐状突起の高さは突起の先端まで含めた球状粒子
径の１〜20％であり、又角錐は大部分が三角錐、又は四
角錐であり、粒子全面が多数のこれら角錐により覆われ
ている。粒子は多結晶体であるが、角錐部は単結晶でも
よい。The polycrystalline diamond particles produced according to the present invention are either one in which each particle is independent, or one in which a plurality of particles are bonded. And in any case, one particle has an aspect ratio of 1-1.3 and a particle size of 0.3-200μ.
m, the height of the pyramidal protrusion is 1 to 20% of the diameter of the spherical particle including the tip of the protrusion, and the pyramid is mostly a triangular pyramid or a quadrangular pyramid, and the entire surface of the particle is covered with a large number of these pyramids. It is being appreciated. The particles are polycrystalline, but the pyramids may be single crystals.
前記多結晶ダイヤモンド粒子は前述のように表面全面に
角錐による複雑な凹凸が存在するので、砥石に成型した
場合は、マトリックスとの間に結合力が生じ、このため
粒子表面に何ら特別の処理を行わなくても、マトリック
スの粒子に対する保持性は極めて良好に保たれる。又表
面処理が行われていないので研削時に研削性能が低下す
ることはない。Since the polycrystalline diamond particles have complex irregularities due to pyramids on the entire surface as described above, when molded into a grindstone, a bonding force is generated between the polycrystalline diamond particles and the matrix, and therefore no special treatment is applied to the particle surface. Even if it is not carried out, the retention of the matrix on the particles is kept extremely good. Further, since no surface treatment is performed, the grinding performance does not deteriorate during grinding.
そして結晶粒の角錐状突起のエッヂは破砕粒のエッヂと
異なり、研摩の場合は研摩時に被研摩物に鋭く喰い込む
ことはない。And the edge of the pyramidal protrusion of the crystal grain is different from the edge of the crushed grain, and in the case of polishing, it does not bite sharply into the object to be polished during polishing.
又一般には砥粒は摩耗時に小破砕が生じ新らしいエッヂ
が次々と出現するものが研削性能が高いが、本発明方法
により製造された多結晶ダイヤモンド粒子の形状は、こ
の現象の生成に好適である。即ち多結晶ダイヤモンド粒
子表面に存在する多数の多錐状突起は研削時に順次小破
砕が起り、新らしいエッヂが次々に現われる。即ち絶え
ず新らしい研削刃先が出現するので、高い研摩研削性能
が常に維持される。Further, generally, the abrasive grains have high grinding performance in which small crushing occurs during wear and new edges appear one after another, but the shape of the polycrystalline diamond particles produced by the method of the present invention is suitable for generation of this phenomenon. is there. That is, a large number of polypyramidal protrusions present on the surface of the polycrystalline diamond particles are successively shredded during grinding, and new edges appear one after another. That is, since a new grinding edge constantly appears, high abrasive grinding performance is always maintained.
本発明の方法により製造された多結晶ダイヤモンド粒子
は以上の説明の如く砥粒、砥石用としてとくに好適であ
るが、従来天然、又は合成ダイヤモンドが用いられてい
たあらゆる用途にも適合する。The polycrystalline diamond particles produced by the method of the present invention are particularly suitable for use as abrasive grains and grindstones as described above, but are also suitable for any application where natural or synthetic diamond has been conventionally used.
本発明の方法はホウ素、アルミニウム、銅の一種、又は
それらの合金や複合物が蒸着され、ダイヤモンド合成反
応に際し、ダイヤモンド生成核を生成し得る基材を用い
る以外、従来の気相法に準じて実施することができる。The method of the present invention, boron, aluminum, one kind of copper, or their alloys or composites are vapor-deposited, during the diamond synthesis reaction, except for using a substrate capable of forming diamond-forming nuclei, according to the conventional vapor phase method It can be carried out.
即ち使用可能な基材としては、従来の気相法に用いられ
るいるSi、Ｗ、MO等の耐熱金属板、SiC、SiO2、WC等の
セラミック焼結体が挙げられ、これら基材にホウ素、ア
ルミニウム、銅の一種又は複合物を例えば蒸着により付
着させて用いる。That is, examples of usable substrates include heat-resistant metal plates such as Si, W, and M 2 O used in the conventional vapor phase method, and ceramic sintered bodies such as SiC, SiO 2 , and WC. One or a composite of boron, aluminum and copper is used by being attached by, for example, vapor deposition.
次に前記の蒸着について述べる。蒸着には、スパッタリ
ング、CVD、真空あるいは減圧蒸着、イオンプレーティ
ング等が含まれる。Next, the vapor deposition will be described. The vapor deposition includes sputtering, CVD, vacuum or reduced pressure vapor deposition, ion plating and the like.
スパッタリングは減圧下で、Ar等のイオンを加速し、ホ
ウ素、アルミニウム、銅又はそれらの合金組成のスパッ
タ材料にあて、スパッタ材から原子又はイオンを飛び出
させ、基材にこれら金属元素の原子又はクラスター状粒
子を凝着させる方法である。Sputtering at reduced pressure to accelerate ions such as A r, boron, aluminum, addressed to copper or sputtered material thereof alloy composition, pops atoms or ions from the sputtering material, atoms of the metal elements to a substrate or This is a method of adhering cluster particles.
CVDはホウ素、アルミニウム、銅の一種以上を含む化合
物を熱分解し、基材上にそれぞれ対応する金属粒子を析
出させる方法である。CVD is a method of thermally decomposing a compound containing one or more of boron, aluminum, and copper to deposit corresponding metal particles on a substrate.
さらに真空あるいは減圧蒸着は真空、あるいは減圧下で
金属を蒸発させ、基材上に析出させる方法である。Further, vacuum or reduced pressure vapor deposition is a method of evaporating a metal under vacuum or reduced pressure to deposit it on a substrate.
またイオンプレーティングは直流電圧、高周波等の励起
手段で、Arガス等の電離気体によるプラズマを形成し、
その中に金属又は化合物の蒸気を加熱蒸発又は電子線加
熱等による発生させて導入し、励起状態を経て、基材上
に析出させる方法である。The ion plating is a DC voltage, the excitation means of the high frequency or the like, to form a plasma by ionizing gas such as A r gas,
In this method, a vapor of a metal or a compound is generated and introduced by heating evaporation or electron beam heating, and the vapor is deposited on the substrate through an excited state.
これらの手法によってターゲットの金属元素又はそれら
の合金等の複合組成を凝着させた基板を用いてダイヤモ
ンド合成を行なった場合、ホウ素、アルミニウム、銅は
ダイヤモンド核生成時に活性な働きをし、ダイヤモンド
結晶の特定面の成長を著しく増大させる結果、結晶粒表
面に多数の角錐状突起を有する金平糖状ダイヤモンド多
結晶粒子となるものと思われる。When diamond synthesis is performed using a substrate on which a composite composition of a target metal element or an alloy thereof is deposited by these methods, boron, aluminum, and copper have an active function during diamond nucleation, and diamond crystals It is considered that as a result of significantly increasing the growth of the specific surface of the diamond, polyploid sugar-like sugar diamond particles having a large number of pyramidal protrusions on the surface of the crystal grain are obtained.
核形成密度は蒸着条件にもよるが適性条件下では、数10
μｍ間隔に核を形成させ得るため、成長ダイヤモンド粒
は独立したしかも粒径分布の狭いものが容易に得られ
る。しかもその再現性は非常に良い。The nucleation density depends on the vapor deposition conditions, but under appropriate conditions it is several tens.
Since nuclei can be formed at intervals of μm, it is easy to obtain grown diamond grains that are independent and have a narrow grain size distribution. Moreover, its reproducibility is very good.
この成長ダイヤモンド粒子の大きさは析出時間等によっ
てコントロールできる。そして途中で新しい核の発生は
あまりないので、かなり揃った粒子が多く得られる。The size of the grown diamond particles can be controlled by the precipitation time and the like. And since there are few new nuclei generated on the way, many particles that are fairly uniform are obtained.
本発明は前記基材を用いる外は従来の気相ダイヤモンド
合成方法と変りはない。即ち、有機化合物としてはメタ
ン、エタン等の炭化水素、メタノール、エタノール、ア
セトン等の含酸素有機化合物を用いることができる。ま
た炭化水素に少量のO2、CO、CO2、H2Oガスを含有させる
こともできる。これらのガスは一般的に水素ガスと混合
（有機化合物の濃度0.2〜10容量％）して使用される
が、その際一部をアルゴン、ヘリウム等の不活性ガスで
置換することもできる。The present invention is the same as the conventional vapor phase diamond synthesis method except that the above-mentioned substrate is used. That is, as the organic compound, hydrocarbons such as methane and ethane, and oxygen-containing organic compounds such as methanol, ethanol and acetone can be used. It is also possible to add a small amount of O 2 , CO, CO 2 or H 2 O gas to the hydrocarbon. These gases are generally used by being mixed with hydrogen gas (concentration of organic compound: 0.2 to 10% by volume), and at that time, a part of them can be replaced with an inert gas such as argon or helium.
ガス圧力は1Torrの減圧から1000Torr程度まで可能であ
る。The gas pressure can be reduced from 1 Torr to about 1000 Torr.
水素ガス等のプラズマ化、原子状水素の発生等ガスの励
起は、2000〜2300℃程度に加熱したタングステン等のフ
イラメントを用いる方法、ガスにマイクロ波、高周波出
力を作用させる方法、直流アーク放電などすべての方法
を採用することができる。Excitation of gas such as generation of hydrogen gas into plasma, generation of atomic hydrogen, etc., method using filament such as tungsten heated to about 2000-2300 ° C, method of applying microwave, high frequency output to gas, DC arc discharge, etc. All methods can be adopted.
基材としては前記したSi、SiC、WC等が用いられ、これ
らは板状にしたものゝ外、SiC、WC等では粒状物を用い
ることもできる。これらの基材の温度は通常250〜1000
℃である。As the base material, the above-mentioned Si, SiC, WC and the like are used. In addition to the plate-shaped ones, SiC, WC and the like can also be granular. The temperature of these substrates is usually 250-1000
℃.
〈発明の効果〉 本発明により、気相法で安定した操業下に再現性よく砥
粒又は砥石用原料として好適なダイヤモンド砥粒の製造
が可能となった。<Effects of the Invention> According to the present invention, it is possible to manufacture diamond abrasive grains suitable for use as abrasive grains or a raw material for a grindstone with good reproducibility under stable operation by a vapor phase method.
〈実 施 例〉 基板として、14mm角、厚さ0.36mmのSiウエハーを用い、
ホウ素、アルミニウム、銅の板をスパッターターゲット
として、Arガス圧0.05Torr、それぞれに対する印加電
圧、電流、時間を1.2KV、0.5mA、30分;1KV、07mA、30
分;1.1KV、0.5mA 60分としてスパッターを施した。<Example> As a substrate, a 14 mm square, 0.36 mm thick Si wafer was used.
Using boron, aluminum and copper plates as sputter targets, Ar gas pressure is 0.05 Torr, applied voltage, current and time for each are 1.2KV, 0.5mA, 30 minutes; 1KV, 07mA, 30
Min; 1.1 KV, 0.5 mA, 60 minutes, and sputtering was performed.
次に各スパッターを施したSiウエハーを用い、次の条件
でダイヤモンドの合成を行った。Next, using the sputtered Si wafer, diamond was synthesized under the following conditions.
即ち内容積約２リットルの熱フイラメント合成装置内
に、前記スパッター処理基板をフイラメント直下5mmに
設置した。エチルアルコールを1.3容量％を含有するH2
ガスを80 SCCM流通させた。圧力100Torr、フイラメント
温度2200℃、基板温度800℃で１時間反応させた。反応
後はいずれの基板にもその表面に、10μｍ前後の多数の
角錐状突起を有する金平糖状粒子が生成していることを
確認した。又これらの基板を薄膜Ｘ線回折法により解説
した結果、ダイヤモンド結晶による回折ピークを認め
た。That is, the sputtered substrate was placed 5 mm directly below the filament in a thermal filament synthesizing apparatus having an internal volume of about 2 liters. H 2 containing 1.3% by volume of ethyl alcohol
Gas was passed through 80 SCCM. The reaction was performed at a pressure of 100 Torr, filament temperature of 2200 ° C., and substrate temperature of 800 ° C. for 1 hour. After the reaction, it was confirmed that, on each surface of all the substrates, spinach-like sugar particles having a large number of pyramidal protrusions of about 10 μm were formed. As a result of explaining these substrates by a thin film X-ray diffraction method, a diffraction peak due to a diamond crystal was recognized.
図面は銅スパッターを施した基板に生成した金平糖状ダ
イヤモンド粒子結晶の1000倍の走査型電子顕微鏡（SE
M）写真を示す。The drawing shows a scanning electron microscope (SE) of 1000 times that of the gold-flake sugar-like diamond particle crystals produced on a substrate sputtered with copper.
M) Shows a photograph.
〈比 較 例〉 実施例１で用いたと全く同様のSi基板にスパッター材と
してSiを用い、Arイオンで電1.2KV、電流0.4mAで１時間
スパッターを行なった。<Comparative example> Si was used as a sputtering material on the same Si substrate as that used in Example 1, and was sputtered for 1 hour at 1.2 KV and 0.4 mA with Ar ions.
スパッター処理をした基板を用い、実施例と同じ条件で
合成実施を行なった。Synthesis was carried out using the sputter-treated substrate under the same conditions as in the examples.
実験完了後、基板表面を光学顕微鏡観察した所、２〜５
μｍ程度のアモルファスカーボン状球体が点在し、所に
よっては、球状体が数十個集合した塊となって点在して
いた。自形の出現したものや角錐状突起の現われたもの
は無かった。After the experiment was completed, the surface of the substrate was observed with an optical microscope.
Amorphous carbon-like spheres of about μm were scattered, and in some places, several tens of spheres were scattered as a lump. There were no automorphic appearances or pyramidal protrusions.
又薄膜Ｘ線回折では黒鉛のブロードなどピークとダイヤ
モンドの低い３本のピークを認めた。In the thin film X-ray diffraction, a peak such as broad of graphite and three low peaks of diamond were recognized.
実施例、比較例は本発明によってのみ砥粒として、砥石
原料として好適な角錐状突起を有する金平糖状ダイヤモ
ンド結晶が生成されることを示している。The examples and comparative examples show that, according to the present invention, as the abrasive grains, the konpeito sugar-like diamond crystals having pyramidal protrusions suitable as a grindstone material are produced.
図面は本発明方法により合成されたダイヤモンドの結晶
構造を示す1000倍の走査型電子顕微鏡写真である。The drawing is a scanning electron micrograph at 1000 times showing the crystal structure of diamond synthesized by the method of the present invention.
Claims (1)
を合成するに際し、基材上にホウ素、アルミニウム、銅
から選ばれた少なくとも一種が蒸着された、ダイヤモン
ド生成核が点在して生成し得る基材を用いることによ
り、基板表面にダイヤモンド粒を生成されることを特徴
とする気相法によるダイヤモンド合成法。1. A group capable of forming diamond-forming nuclei interspersed with vapor deposited at least one kind selected from boron, aluminum and copper on a substrate when synthesizing diamond from an organic compound by a vapor phase method. A diamond synthesis method by a vapor phase method, characterized in that diamond particles are generated on the surface of a substrate by using a material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258291A JPH0776149B2 (en) | 1987-10-15 | 1987-10-15 | Diamond synthesis method by vapor phase method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258291A JPH0776149B2 (en) | 1987-10-15 | 1987-10-15 | Diamond synthesis method by vapor phase method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01103987A JPH01103987A (en) | 1989-04-21 |
| JPH0776149B2 true JPH0776149B2 (en) | 1995-08-16 |
Family
ID=17318213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62258291A Expired - Lifetime JPH0776149B2 (en) | 1987-10-15 | 1987-10-15 | Diamond synthesis method by vapor phase method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0776149B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA888034B (en) * | 1987-12-17 | 1989-06-28 | Gen Electric | Diamond growth process |
| JPH05221791A (en) * | 1991-12-18 | 1993-08-31 | Kobe Steel Ltd | Method for synthesizing diamond by combustion |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63103810A (en) * | 1986-10-21 | 1988-05-09 | Asahi Chem Ind Co Ltd | Production of powdery diamond |
| ZA877921B (en) * | 1986-12-22 | 1988-04-21 | General Electric Company | Condensate diamond |
| JP2582765B2 (en) * | 1987-02-10 | 1997-02-19 | 株式会社東芝 | Diamond production equipment |
| JPS63286575A (en) * | 1987-05-19 | 1988-11-24 | Idemitsu Petrochem Co Ltd | Production of rigid carbon film |
-
1987
- 1987-10-15 JP JP62258291A patent/JPH0776149B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01103987A (en) | 1989-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5112643A (en) | Gaseous phase synthesized diamond and method for synthesizing same | |
| Liu et al. | Diamond chemical vapor deposition: nucleation and early growth stages | |
| CA2185217A1 (en) | Process to produce diamond films | |
| US20030052080A1 (en) | Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby | |
| JPH0881299A (en) | Synthetic diamond film for decreasing arcuate curving and its preparation | |
| JPH0288497A (en) | Production of single crystal diamond grain | |
| US5071708A (en) | Composite diamond grain | |
| US5080975A (en) | Composite diamond granules | |
| US5626908A (en) | Method for producing silicon nitride based member coated with film of diamond | |
| JPS62138395A (en) | Preparation of diamond film | |
| JPH08151295A (en) | Production of substrate for vapor synthesis of single crystal diamond film | |
| JPS61151095A (en) | Synthesis of diamond | |
| Kikuchi et al. | Characteristics of thin film growth in the synthesis of diamond by chemical vapour deposition and application of the thin film synthesis technology for tools | |
| JPH0776149B2 (en) | Diamond synthesis method by vapor phase method | |
| US5268201A (en) | Composite diamond grain and method for production thereof | |
| WO2004106595A1 (en) | Process for producing extremely flat microcrystalline diamond thin film by laser ablation method | |
| CN108505018A (en) | A method of growth excellent diamonds particle and diamond thin | |
| JP2501589B2 (en) | Vapor-phase synthetic diamond and its synthesis method | |
| JPS61201698A (en) | Diamond film and its production | |
| JP2767897B2 (en) | Method for producing composite diamond abrasive grains for precision polishing | |
| JPH01317111A (en) | Polycrystalline diamond abrasive grain and production thereof | |
| JPH0224005A (en) | Diamond coated tool and manufacture thereof | |
| JPS60255366A (en) | Preparation of diamond grinding paper | |
| JP2625840B2 (en) | Method for producing coarse artificial diamond crystals | |
| JP2780497B2 (en) | Method for forming diamond film on Si substrate by CVD method |