JPH0769576B2 - Lighting optics - Google Patents
Lighting opticsInfo
- Publication number
- JPH0769576B2 JPH0769576B2 JP59022891A JP2289184A JPH0769576B2 JP H0769576 B2 JPH0769576 B2 JP H0769576B2 JP 59022891 A JP59022891 A JP 59022891A JP 2289184 A JP2289184 A JP 2289184A JP H0769576 B2 JPH0769576 B2 JP H0769576B2
- Authority
- JP
- Japan
- Prior art keywords
- laser light
- light sources
- laser
- optical system
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Light Sources And Details Of Projection-Printing Devices (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明はエキシマ（excimer）レーザ等を光源とする、
半導体露光装置に用いるに適した照明光学装置に関す
る。TECHNICAL FIELD The present invention uses an excimer laser or the like as a light source,
The present invention relates to an illumination optical device suitable for use in a semiconductor exposure device.
〔従来技術〕 近年、微細パターンを形成する要求が高まり、その為に
波長領域200〜330〔nm〕のデイープUV領域の光を用いた
光学系によるリソグラフイーが開発されている。その場
合、光源としては超高圧水銀灯又はキセノン水銀ランプ
が用いられることが多いが、光源の指向性がないこと
ゝ、その輝度が必らずしも十分でないことから、その光
源を半導体露光装置に用いると露光時間が長くなり、そ
のスループツトを悪くする傾向があつた。[Prior Art] In recent years, the demand for forming a fine pattern has increased, and for this reason, lithography using an optical system using light in the deep UV region of wavelength region 200 to 330 [nm] has been developed. In that case, an ultra-high pressure mercury lamp or a xenon mercury lamp is often used as a light source, but since the light source has no directivity and its brightness is not always sufficient, the light source is used as a semiconductor exposure apparatus. When it is used, the exposure time becomes long, and the sloping tendency tends to be deteriorated.
最近では短波長領域のレーザ光を射出するレーザの開発
が進んでおり、上記のようなデイーブUV領域の波長を有
する高輝度のデーザ光を半導体露光装置に用いることが
可能になつてきている。Recently, a laser emitting a laser beam in a short wavelength region has been developed, and it has become possible to use a high-intensity dither light having a wavelength in the Dave UV region as described above in a semiconductor exposure apparatus.
ところで、通常半導体露光装置の場合、マスクパターン
による光の回折効果によりウエハ上にできる像の品位が
損なわれるのを防ぐ為に複数の２次光源を形成すること
が知られている。By the way, in the case of a normal semiconductor exposure apparatus, it is known to form a plurality of secondary light sources in order to prevent the quality of an image formed on a wafer from being deteriorated by the diffraction effect of light by a mask pattern.
しかし、たとえ上記のような波長領域内のレーザ光を射
出する単一のレーザを用いて２次光源を形成したとして
も、レーザ光の高い可干渉性の為にマスク面上に干渉縞
が現われ、著るしい露光ムラを生ずるという重大な欠点
が生ずる。However, even if the secondary light source is formed by using a single laser that emits laser light in the wavelength range as described above, interference fringes appear on the mask surface due to the high coherence of the laser light. However, there is a serious defect that remarkable exposure unevenness occurs.
本発明は上記の点に鑑み、上記欠点を解消するために提
案されたもので、複数の２次光源間による光の可干渉を
なくし、たとえば被照射面上に干渉縞が現われることな
く、露光量の一様性を確保しつゝ、レーザ光源による高
エネルギーの露光を可能とする、半導体露光装置等に用
いられる照明光学装置を提供することを目的とする。In view of the above points, the present invention has been proposed to solve the above-mentioned drawbacks, and eliminates coherence of light between a plurality of secondary light sources, for example, exposure without causing interference fringes on the irradiated surface. An object of the present invention is to provide an illumination optical device used for a semiconductor exposure device or the like, which can ensure high quantity exposure while enabling high energy exposure by a laser light source.
上記目的を達成するための本発明の照明光学装置は、集
光光学系と、複数個のレンズを前記集光光学系の光軸と
交差する方向に並べたレンズアレイとを有し、互いに可
干渉性が低い複数個のレーザー光の各々を前記レンズア
レイの対応するレンズのみに入射させることにより前記
レンズアレイにより互いに可干渉性が低い複数個の２次
光源を形成し、該複数個の２次光源からのレーザー光を
前記集光光学系により被照明面上に重ね合わせることを
特徴とする。An illumination optical device of the present invention for achieving the above object includes a condensing optical system and a lens array in which a plurality of lenses are arranged in a direction intersecting with the optical axis of the condensing optical system, and they are mutually compatible. A plurality of secondary light sources having low coherence are formed by the lens array by making each of the plurality of laser beams having low coherence enter only the corresponding lens of the lens array. It is characterized in that laser light from a secondary light source is superposed on the illuminated surface by the condensing optical system.
本発明の照明光学装置においては、後に実施例の説明で
用いる図面に示すように、複数個のレーザー光のそれぞ
れを複数のレンズからなるレンズアレイの対応するレン
ズのみに入射させ、さらに集光光学形により重ね合わせ
ている。In the illumination optical device of the present invention, as shown in the drawings used in the description of the embodiments later, each of the plurality of laser beams is made incident only on the corresponding lens of the lens array composed of the plurality of lenses, and further the condensing optical system is used. Stacked according to shape.
各レーザー光は互いに可干渉性が低いものであるので、
被照明面上での照明光は照度むらが小さなものとなる。Since each laser light has low coherence with each other,
Illumination light on the illuminated surface has small illuminance unevenness.
以下、本発明の実施例を図面に従つて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明に係る照明光学装置の一実施例の説明図
である。図中、1a,1bはたとえばインジエクシヨン・ロ
ツキングされたエキシマレーザのようなレーザ光源で、
光軸３と直角な方向にレーザ光を射出するように配置さ
れている。1cは同じくレーザ光源で、光軸３の方向にレ
ーザ光を射出するように配置されている。2a,2bはミラ
ーで、レーザ光源1a,1bからのレーザ光を夫々反射して
光軸３の方向に向けるためのものである。4a,4b,4cは２
次光源形成用の凸レンズで、レーザ光源1a,1b,1cからの
光軸３の方向のレーザ光を夫々入射して集光し、２次光
源A1，A2，A3を夫々形成する。５は光の収束性を有する
レンズで、たとえば２次光源A1，A2，A3を含む面もしく
はその近傍に焦平面を有するように配置されている。６
は微細なパターンを有する半導体露光用のマスクで、レ
ンズ５のもう一方の焦平面もしくはその近傍に配置され
ており、たとえばシリコンウエハ７はこのマスク６の後
方に配置されている。FIG. 1 is an explanatory diagram of an embodiment of an illumination optical device according to the present invention. In the figure, 1a and 1b are laser light sources such as incision-locked excimer lasers,
It is arranged so as to emit laser light in a direction perpendicular to the optical axis 3. 1c is also a laser light source, which is arranged so as to emit laser light in the direction of the optical axis 3. Reference numerals 2a and 2b are mirrors for reflecting the laser beams from the laser light sources 1a and 1b and directing them toward the optical axis 3. 4a, 4b, 4c is 2
A convex lens for the next source forming a laser light source 1a, 1b, the laser beam in the direction of the optical axis 3 from 1c respectively incident to condensed, secondary light sources A 1, A 2, A 3 are respectively formed. Reference numeral 5 denotes a lens having a light converging property, which is arranged so as to have a focal plane on a surface including the secondary light sources A 1 , A 2 , and A 3 or in the vicinity thereof. 6
Is a mask for semiconductor exposure having a fine pattern and is arranged on the other focal plane of the lens 5 or in the vicinity thereof. For example, the silicon wafer 7 is arranged behind this mask 6.
レーザ光源1a,1bより射出されたレーザ光はミラー2a,2b
により夫々反射されて凸レンズ4a,4bに夫々導びかれ、
一方レーザ光源1cより射出されたレーザ光はそのまゝ直
接凸レンズ4cに導びかれ、凸レンズ4a,4b,4cを夫々通過
後のレーザ光は２次光源A1，A2，A3を形成する。それら
の２次光源A1，A2，A3から出た夫々の発散光束はマスク
６の面を一様に照明する。この時、２次光源A1，A2，A3
より夫々出た発散光束はマスク６の面上で重ね合わされ
るが、本発明においては各２次光源A1，A2，A3は各別個
のレーザ光源1a,1b,1cにより形成されたものである為、
２次光源A1，A2，A3より夫々出た光束間の可干渉性は十
分に低く、マスク６の面上に干渉縞が現われてウエハ７
の露光の一様性を損うということは無い。The laser light emitted from the laser light sources 1a and 1b is reflected by the mirrors 2a and 2b.
Is reflected by each and guided to each of the convex lenses 4a and 4b,
On the other hand, the laser light emitted from the laser light source 1c is directly guided to the convex lens 4c, and the laser light after passing through the convex lenses 4a, 4b, 4c respectively forms the secondary light sources A 1 , A 2 , A 3 . . The divergent light fluxes emitted from the secondary light sources A 1 , A 2 , and A 3 illuminate the surface of the mask 6 uniformly. At this time, the secondary light sources A 1 , A 2 , A 3
The divergent light fluxes emitted respectively are superposed on the surface of the mask 6, but in the present invention, each secondary light source A 1 , A 2 , A 3 is formed by a separate laser light source 1a, 1b, 1c. Because,
The coherence between the light beams emitted from the secondary light sources A 1 , A 2 , and A 3 is sufficiently low, and interference fringes appear on the surface of the mask 6 and the wafer 7
Does not impair the uniformity of exposure.
なお、上記実施例では２次光源形成用に凸レンズを用い
たが凹レンズであつても構わないことは言うまでもな
い。Although the convex lens is used for forming the secondary light source in the above embodiment, it goes without saying that a concave lens may be used.
以上説明したように、複数のレーザ光源を用いることに
より被照射面上の干渉縞の発生を押え、その一様な露光
を可能にした。又、本発明を半導体露光装置に適用した
場合、高照度、高スループツトにできる効果を有する。As described above, by using a plurality of laser light sources, it is possible to suppress the generation of interference fringes on the surface to be irradiated and to make uniform exposure possible. Further, when the present invention is applied to a semiconductor exposure apparatus, there is an effect that high illuminance and high throughput can be obtained.
第１図は本発明の実施例で、複数台のレーザ光源を用い
た照明光学系の構成図である。 1a,1b,1c:レーザ光源、2a,2b,:ミラー,3:（照明光学系
の）光軸、4a,4b,4c:（ビーム拡大用）凸レンズ、5:レ
ンズ、6:マスク、7:ウエハ、FIG. 1 is a block diagram of an illumination optical system using a plurality of laser light sources in an embodiment of the present invention. 1a, 1b, 1c: Laser light source, 2a, 2b ,: Mirror, 3: Optical axis (of illumination optical system), 4a, 4b, 4c: Convex lens (for beam expansion), 5: Lens, 6: Mask, 7: Wafer,
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/027 Continuation of front page (51) Int.Cl. 6 Identification code Office reference number FI technical display area H01L 21/027
Claims (1)
光学系の光軸と交差する方向に並べたレンズアレイとを
有し、互いに可干渉性が低い複数個のレーザー光の各々
を前記レンズアレイの対応するレンズのみに入射させる
ことにより前記レンズアレイにより互いに可干渉性が低
い複数個の２次光源を形成し、該複数個の２次光源から
のレーザー光を前記集光光学系により被照明面上に重ね
合わせることを特徴とする照明光学装置。1. A condenser optical system and a lens array in which a plurality of lenses are arranged in a direction intersecting the optical axis of the condenser optical system. By making each incident only on the corresponding lens of the lens array, a plurality of secondary light sources having low coherence are formed by the lens array, and the laser light from the plurality of secondary light sources is condensed. An illumination optical device characterized by being superposed on an illuminated surface by an optical system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59022891A JPH0769576B2 (en) | 1984-02-13 | 1984-02-13 | Lighting optics |
| US07/715,743 US5091744A (en) | 1984-02-13 | 1991-06-18 | Illumination optical system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59022891A JPH0769576B2 (en) | 1984-02-13 | 1984-02-13 | Lighting optics |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8129642A Division JPH09102456A (en) | 1996-05-24 | 1996-05-24 | Illuminating optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60168133A JPS60168133A (en) | 1985-08-31 |
| JPH0769576B2 true JPH0769576B2 (en) | 1995-07-31 |
Family
ID=12095282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59022891A Expired - Lifetime JPH0769576B2 (en) | 1984-02-13 | 1984-02-13 | Lighting optics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0769576B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6325640A (en) * | 1986-07-18 | 1988-02-03 | Oak Seisakusho:Kk | Optical system for projecting parallel light |
| JPH0567558A (en) * | 1991-09-06 | 1993-03-19 | Nikon Corp | Exposure method |
| JPH09102456A (en) * | 1996-05-24 | 1997-04-15 | Canon Inc | Illuminating optical device |
| US7868999B2 (en) * | 2006-08-10 | 2011-01-11 | Asml Netherlands B.V. | Lithographic apparatus, source, source controller and control method |
| JP5447445B2 (en) * | 2011-07-11 | 2014-03-19 | 株式会社リコー | Illumination optical system, exposure apparatus, and projection apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5096183A (en) * | 1973-12-24 | 1975-07-31 |
-
1984
- 1984-02-13 JP JP59022891A patent/JPH0769576B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60168133A (en) | 1985-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |