JPH0763087B2 - Method of manufacturing image sensor - Google Patents
Method of manufacturing image sensorInfo
- Publication number
- JPH0763087B2 JPH0763087B2 JP61017602A JP1760286A JPH0763087B2 JP H0763087 B2 JPH0763087 B2 JP H0763087B2 JP 61017602 A JP61017602 A JP 61017602A JP 1760286 A JP1760286 A JP 1760286A JP H0763087 B2 JPH0763087 B2 JP H0763087B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- sensor
- substrate
- cutting
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 28
- 238000005520 cutting process Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 4
- 238000003491 array Methods 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、イメージセンサの製造方法に係り、特に、イ
メージセンサを受光素子の近傍で切断する方法に関す
る。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an image sensor, and more particularly to a method for cutting the image sensor in the vicinity of a light receiving element.
ファクシミリや複写機等の画像入力部で使用される原稿
読み取り装置においては、原稿からの光学情報を電気信
号に変換するため、多数の光電変換素子（受光素子）を
１次元的に配列したイメージセンサが用いられている。In a document reading device used in an image input unit such as a facsimile or a copying machine, an image sensor in which a large number of photoelectric conversion elements (light receiving elements) are arranged one-dimensionally in order to convert optical information from a document into an electric signal. Is used.
近年、アモルファスシリコンを光導電層として使用する
ことにより、大面積デバイスの形成が可能となり、原稿
と同一幅を有する密着形イメージセンサの開発が進めら
れている。密着型イメージセンサは、縮小光学系を不要
とし、装置の大幅な小型化を可能とするため、その使用
が注目されているデバイスである。In recent years, by using amorphous silicon as a photoconductive layer, a large-area device can be formed, and a contact image sensor having the same width as a document is being developed. The contact image sensor does not require a reduction optical system and enables a significant downsizing of the apparatus, and is a device that is drawing attention as its use.
しかしながら、イメージセンサの長尺化が進むにつれて
大型の製造装置が必要となったり、製造歩留りが低下す
る等の不都合が生じてきており、大型図面や黒板サイズ
の原稿等の大型原稿を読み取るようなセンサは、実用に
供し得るものではなかった。However, as the length of the image sensor is increased, a large-scale manufacturing apparatus is needed, and the manufacturing yield is reduced, which causes inconveniences. The sensor was not practical.
そこで、第３図（ｃ）に示す如く、所定数の受光素子を
配列したイメージセンサを複数個つなぎ合わせ、極めて
長尺のイメージセンサを構成する方法が提案されてい
る。Therefore, as shown in FIG. 3C, a method has been proposed in which a plurality of image sensors in which a predetermined number of light receiving elements are arranged are connected to each other to form an extremely long image sensor.
各イメージセンサを接続するに際し、第３図に（ａ）に
示す如く、例えば、まずガラス基板11上に下部電極とし
てのクロム電極12、光導電体層としての水素化アモルフ
ァスシリコン層13、上部電極14としての酸化インジウム
錫（ITO）電極を形成し、サンドイッチ型のイメージセ
ンサを形成する。When connecting each image sensor, as shown in FIG. 3 (a), for example, first, a chromium electrode 12 as a lower electrode, a hydrogenated amorphous silicon layer 13 as a photoconductor layer, and an upper electrode are provided on a glass substrate 11. An indium tin oxide (ITO) electrode as 14 is formed to form a sandwich type image sensor.
ところで、受光部の形成、特に、水素化アモルファスシ
リコン層の形成において、基板の端部まで均一な膜を形
成するのは困難であり、端部では膜厚の薄い部分が生じ
たりすることが多い。また、フォトレジストの塗布工程
等にも起因して、フォトリソグラフィにより基板の端部
にまで微細パターンを形成することも困難である。従っ
て、実際の大きさよりも大きいものを形成しておき、受
光部の形成後に第３図（ｂ）に示す如く端部を切断す
る。By the way, in the formation of the light receiving portion, particularly in the formation of the hydrogenated amorphous silicon layer, it is difficult to form a uniform film up to the end portion of the substrate, and a thin portion is often generated at the end portion. . In addition, it is difficult to form a fine pattern even on the edge portion of the substrate by photolithography due to the photoresist coating process and the like. Therefore, a size larger than the actual size is formed, and after forming the light receiving part, the end part is cut as shown in FIG. 3 (b).
このようにして端部の切断された状態で第３図（ｃ）に
示す如く支持基台15上に接着される。In this way, the end portion is cut and bonded to the support base 15 as shown in FIG. 3 (c).
しかしながら、この場合、受光部の極めて近く、すなわ
ち、ビット間距離ｇの1/2以下で切断しなければならな
いため、切断時にかかる機械的ストレスによって、端部
のビットでは光電変換特性が劣化し、特に暗電流が顕著
に増加してしまうという不都合があった。However, in this case, since it is necessary to cut very close to the light receiving portion, that is, at a distance of 1/2 or less of the bit distance g, the mechanical stress applied at the time of cutting deteriorates the photoelectric conversion characteristics of the bit at the end, In particular, there is a disadvantage that the dark current remarkably increases.
そこで本発明では、イメージセンサの受光部の形成に先
立ち、基板上に切断用の溝を形成しておき、受光部の形
成後に、該溝の位置で基板を切断するようにしている。Therefore, in the present invention, a groove for cutting is formed on the substrate before forming the light receiving portion of the image sensor, and after forming the light receiving portion, the substrate is cut at the position of the groove.
すなわち、あらかじめ基板の受光素子形成面側から、基
板厚さの1/2〜1/10の深さに切断用の溝部を形成し、こ
の溝部上にかかるように受光素子を形成し、この溝部に
起因して受光素子の（通常は光電変換層も含めて）共通
電極にクラック等が生じ、切断用の溝部の位置から容易
に受光素子とともに基板を切断することができるように
したことを特徴とするものである。That is, a groove for cutting is formed in advance from the light-receiving element formation surface side of the substrate to a depth of 1/2 to 1/10 of the substrate thickness, and the light-receiving element is formed so as to overlap the groove. The common electrode of the light receiving element (usually also including the photoelectric conversion layer) is cracked due to, and the substrate can be easily cut together with the light receiving element from the position of the groove for cutting. It is what
また、上述の如くして切断されたイメージセンサを支持
基台上に１列に配列し、長尺のイメージセンサを形成す
るようにしている。Further, the image sensors cut as described above are arranged in a row on the support base to form a long image sensor.
ところで、イメージセンサの受光部の形成に先立ち、ビ
ット領域の外側となる領域に、基板厚さの1/2〜1/10の
溝を形成しておくようにしたもので、切断が容易で歪の
発生を低減することができる上、切断しないでそのまま
残す箇所場合にも支持強度が十分に高いものとなってい
る。By the way, prior to the formation of the light receiving part of the image sensor, a groove that is 1/2 to 1/10 of the substrate thickness is formed in the area outside the bit area. It is possible to reduce the occurrence of the above, and the supporting strength is sufficiently high even in the case where it is left as it is without being cut.
このようにあらかじめ、溝を形成しておくことにより、
切断時のセンサ部への機械的ストレスが大幅に低減さ
れ、端部まで良好な光電変換特性を有するイメージセン
サの形成が可能となる。By forming the groove in advance in this way,
The mechanical stress on the sensor portion at the time of cutting is significantly reduced, and it is possible to form an image sensor having good photoelectric conversion characteristics up to the end portion.
ところで帯状に連続して受光素子を形成する場合、基板
とともに受光素子の共通電極等も切断しなければならな
いが、基板の素子形成面側に溝を形成しておくことによ
り、この溝上に形成される共通電極にクラック等が生
じ、素子形成後に切断が容易になり、上述の如くして端
部のビットまで良好な光電変換特性を有するイメージセ
ンサを複数個接続することにより、極めて長尺で信頼性
の高いイメージセンサの形成が可能となる。By the way, when the light receiving element is formed continuously in a strip shape, the common electrode of the light receiving element and the like must be cut together with the substrate, but by forming a groove on the element forming surface side of the substrate, it is formed on this groove. The common electrode is cracked and easily cut after the element is formed.As described above, by connecting multiple image sensors with good photoelectric conversion characteristics up to the end bits, it is extremely long and reliable. It is possible to form an image sensor with high flexibility.
また、上述の如くして端部のビットまで良好な光電変換
特性を有するイメージセンサを複数個接続することによ
り、極めて長尺で信頼性の高いイメージセンサの形成が
可能となる。Further, as described above, by connecting a plurality of image sensors having good photoelectric conversion characteristics up to the end bits, it is possible to form an extremely long and highly reliable image sensor.
ところで、切断に先立ち、ビットごとに検査を行い、こ
の場合検査結果に応じて切断する箇所もあれば切断しな
いでそのまま残す箇所もあるが、切断用の溝の深さを、
基板の厚さの1/10〜1/2となるようにすることにより、
切断する箇所は機械的ストレスもなく良好に切断され、
切断しないでそのまま残す場合も支持強度を維持するこ
とができる。このように溝の深さを上記のように規定す
ることにより両方の場合に対し、良好な結果を維持する
ことができるという重要な意味を持つ。By the way, prior to cutting, an inspection is performed for each bit, and in this case, there are some parts to be cut according to the inspection result and some parts are left uncut, but the depth of the cutting groove is
By making it 1/10 to 1/2 of the thickness of the substrate,
The part to be cut is well cut without mechanical stress,
The supporting strength can be maintained even when it is left as it is without being cut. By thus defining the groove depth as described above, it is important to maintain good results in both cases.
〔実施例〕 以下、本発明の実施例について図面を参照しつつ詳細に
説明する。Embodiments Embodiments of the present invention will be described in detail below with reference to the drawings.
まず、 次いで、通常の方法で、センサ部を形成する。First, the sensor section is formed by a normal method.
すなわち、スクリーン印刷法により、メタロオーガニッ
ク金からなる配線パターン（図示せず）を形成する。That is, a wiring pattern (not shown) made of metallo-organic gold is formed by the screen printing method.
続いて、蒸着法によりクロム薄膜を着膜した後、フォト
リソエッチング法により、下部電極３をパターニングす
る。（第１図（ａ）） 第１図（ａ）に示す如く、ダイヤモンドチップ等を用い
てスクライブすることにより、ガラス基板１の表面上の
所定の位置に切断用の溝２を形成する。（このとき、該
溝２の深さは基板の厚さの1/10程度とする。） 次いで、メタルマスクを使用し、該下部電極３の電極部
を十分に覆うように光導電体層４としてノンドープの水
素化アモルファスシリコン層をグロー放電法により堆積
した後、さらにこの上層に、透光性の上部電極５とし
て、酸化インジウム錫膜をスパッタリング法により形成
し、サンドイッチ型のイメージセンサを形成する。（第
１図（ｂ）） この後、機械的応力により第１図（ｃ）に示す如く、該
イメージセンサの端部を切断除去する。Then, after depositing a chromium thin film by a vapor deposition method, the lower electrode 3 is patterned by a photolithographic etching method. (FIG. 1 (a)) As shown in FIG. 1 (a), a groove 2 for cutting is formed at a predetermined position on the surface of the glass substrate 1 by scribing using a diamond tip or the like. (At this time, the depth of the groove 2 is set to about 1/10 of the thickness of the substrate.) Next, using a metal mask, the photoconductor layer 4 is sufficiently covered to cover the electrode portion of the lower electrode 3. After a non-doped hydrogenated amorphous silicon layer is deposited by glow discharge method as above, an indium tin oxide film is further formed on the upper layer as a transparent upper electrode 5 by a sputtering method to form a sandwich type image sensor. . (FIG. 1 (b)) After this, as shown in FIG. 1 (c), the end portion of the image sensor is cut and removed by mechanical stress.
このとき、切断に先立ち、溝２が形成されているため、
切断によるストレスも小さくイメージセンサの端部のビ
ットについても、光電変換特性は劣化することなく良好
に維持されており、この状態で、通常の接続法により、
支持基台６上に１列に接続する。（第１図（ｄ）） このようにして長尺のイメージセンサの形成が可能とな
り、これは極めて信頼性の高いものとなっている。At this time, since the groove 2 is formed prior to cutting,
The stress due to cutting is small, and even for the bit at the end of the image sensor, the photoelectric conversion characteristics are maintained well without deterioration, and in this state, by the normal connection method,
One row is connected on the support base 6. (FIG. 1 (d)) In this way, it is possible to form a long image sensor, which is extremely reliable.
なお、上記実施例では、溝の深さは、基板の厚さの1/10
程度としたが、1/2〜1/10の範囲で適宜選択可能であ
る。In the above example, the depth of the groove is 1/10 of the thickness of the substrate.
Although the degree is set, it can be appropriately selected within the range of 1/2 to 1/10.
また、溝の形成面についても、受光素子形成面のみなら
ず、第２図（ａ）および（ｂ）に示す如く必要に応じて
裏面側に溝２′を形成したり両面に溝2a,2bを形成した
りしてもよい。受光素子およびパッシベーション膜を連
続的に形成し、その後で切断しようとする場合は、パッ
シベーション膜の存在により、切断が困難であり、良好
な切断面を得ることは不可能であるため、裏面側又は両
側に形成するのが望ましい。Further, as to the groove forming surface, not only the light receiving element forming surface but also the groove 2'on the back surface side or the grooves 2a, 2b on both surfaces as required as shown in FIGS. 2 (a) and 2 (b). May be formed. When the light-receiving element and the passivation film are continuously formed and then the cutting is attempted, it is difficult to cut due to the existence of the passivation film, and it is impossible to obtain a good cut surface. It is desirable to form on both sides.
更に、実施例では、複数のイメージセンサを一列に接続
して長尺のイメージセンサを形成する方法について説明
したが、接続する場合だけでなく、イメージセンサを単
体で使用する場合にも有効であることはいうまでもな
い。すなわち、光導電体層としての水素化アモルファス
シリコン層の形成をはじめ、下部電極としてのクロム
層、上部電極としての酸化インジウム錫層等の形成にお
いて、端部では、どうしても膜厚が薄くなる等の欠陥が
生じ易い。またスクリーン印刷法によってメタロオーガ
ニック金等の配線パターンを形成する際基板端部に***
部が生じ易い。従って、欠陥領域であることの多い端部
を切断除去し、良好な領域のみを使用することにより、
歩留りを向上することも可能である。Further, in the embodiment, the method of forming a long image sensor by connecting a plurality of image sensors in a row has been described, but it is effective not only in the case of connection but also in the case of using the image sensor alone. Needless to say. That is, in the formation of the hydrogenated amorphous silicon layer as the photoconductor layer, the formation of the chromium layer as the lower electrode, the indium tin oxide layer as the upper electrode, etc. Defects are likely to occur. Further, when forming a wiring pattern of metallo-organic gold or the like by the screen printing method, a raised portion is likely to occur at the end of the substrate. Therefore, by cutting and removing the ends, which are often defective areas, and using only good areas,
It is also possible to improve the yield.
更にまた、基板の端部を切断する場合のみならず、あら
かじめ、各ビット間のすべての部分に溝を形成しておく
ことにより、各受光素子の検査を行なった後、欠陥の検
出されたビットを除いて所定の長さに切断し、これをイ
メージセンサとして使用することも可能であり、更に歩
留り向上することができる。Furthermore, not only when cutting the edge of the substrate, but also by forming grooves in all parts between each bit in advance, after inspecting each light receiving element, the bit in which the defect is detected is detected. It is also possible to cut into a predetermined length except for the above and use this as an image sensor, and further improve the yield.
以上、説明してきたように、本発明によれば、センサ部
の形成に先立ち、基板上に切断用の溝部を形成してお
き、センサ部の形成後に、該溝部の位置で基板を切断す
るようにしているため、切断時の機械的ストレスを大幅
に低減することができ、端部ビットの欠陥もなく信頼性
の高いイメージセンサを形成することが可能となる。ま
た、これらを１列に接続して、信頼性の高い長尺のイメ
ージセンサの形成が可能となる。As described above, according to the present invention, the groove portion for cutting is formed on the substrate before forming the sensor portion, and the substrate is cut at the position of the groove portion after the sensor portion is formed. Therefore, the mechanical stress at the time of cutting can be significantly reduced, and it is possible to form a highly reliable image sensor without defects in the end bits. Further, by connecting these in one row, it becomes possible to form a highly reliable long image sensor.
第１図（ａ）乃至（ｄ）は、本発明実施例のイメージセ
ンサの製造工程図、第２図（ａ）および（ｂ）は、本発
明の方法に基づく、溝部の形成例の変形を示す図、第３
図（ａ）乃至（ｃ）は、従来例のイメージセンサの形成
工程を示す図である。 1,11……ガラス基板、2,2′,2a,2b……溝、3,12……下
部電極、4,13……光導電体層、5,14……上部電極、6,15
……支持基台。1 (a) to 1 (d) are manufacturing process diagrams of an image sensor according to an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) show a modification of an example of forming a groove portion based on the method of the present invention. Figure showing, third
FIGS. 9A to 9C are diagrams showing a process of forming a conventional image sensor. 1,11 …… Glass substrate, 2,2 ′, 2a, 2b …… Groove, 3,12 …… Lower electrode, 4,13 …… Photoconductor layer, 5,14 …… Upper electrode, 6,15
…… Support base.
Claims (2)
サの製造方法において、 センサアレイ形成用の基板の、個別電極間領域または、
後のセンサ形成工程により、個別電極を形成してビット
領域を構成する領域の間となる領域のすべてに、基板の
受光素子形成面側から、前記基板の厚さの1/10〜1/2の
深さをもつ少なくとも１つの切断用の溝部をそれぞれ形
成する溝部形成工程と、 前記基板上に、複数の個別電極と、帯状の光電変換層
と、帯状の共通電極との積層構造体からなる複数の受光
素子を配列したセンサを形成するセンサ形成工程と、 欠陥の検出されたビットを除去するように、選択された
前記溝部のうちの所定の溝部に沿って、前記センサを切
断する切断工程と、 複数の切断された前記センサアレイを、前記切断位置が
密着するように、支持基台上に、複数個１列に配列して
接着せしめる接続工程とを含むことを特徴とするイメー
ジセンサの製造方法。1. A method for manufacturing an image sensor in which a plurality of light receiving elements are arranged, wherein a region between individual electrodes of a substrate for forming a sensor array, or
By the subsequent sensor formation step, from the light receiving element formation surface side of the substrate to 1/10 to 1/2 of the thickness of the substrate, in all the regions between the regions forming the individual electrodes and forming the bit region. Forming a groove portion for forming at least one cutting groove portion having a depth of, and forming a laminated structure of a plurality of individual electrodes, a belt-shaped photoelectric conversion layer, and a belt-shaped common electrode on the substrate. A sensor forming step of forming a sensor in which a plurality of light receiving elements are arranged, and a cutting step of cutting the sensor along a predetermined groove part of the selected groove parts so as to remove a bit in which a defect is detected. And a connecting step of arranging and adhering a plurality of the cut sensor arrays in a row on a support base so that the cutting positions are in close contact with each other. Production method.
サの製造方法において、 センサアレイ形成用の基板の、少なくとも一端の個別電
極の外側または、後のセンサ形成工程により、個別電極
を形成してビット領域を構成する領域の外側に、基板の
受光素子形成面側から、前記基板の厚さの1/10〜1/2の
深さをもつ切断用の溝部をそれぞれ形成する溝部形成工
程と、 前記基板上に、複数の個別電極と、光電変換層と、帯状
の共通電極との積層構造体からなる複数の受光素子を配
列したセンサアレイを形成するセンサ形成工程と、 前記溝部の位置で前記センサアレイを切断する切断工程
と、 複数の切断された前記センサアレイを、前記切断位置が
密着するように、支持基台上に、１列に配列して接着せ
しめる接続工程とを含むことを特徴とするイメージセン
サの製造方法。2. A method of manufacturing an image sensor in which a plurality of light receiving elements are arranged, wherein individual electrodes are formed outside the individual electrodes on at least one end of a substrate for forming a sensor array or by a subsequent sensor forming step. A groove portion forming step of forming a groove portion for cutting having a depth of 1/10 to 1/2 of the thickness of the substrate from the light receiving element formation surface side of the substrate, outside the region forming the bit region, On the substrate, a sensor forming step of forming a sensor array in which a plurality of light receiving elements formed of a laminated structure of a plurality of individual electrodes, a photoelectric conversion layer, and a strip-shaped common electrode are arranged, and at the position of the groove portion, The method includes a cutting step of cutting the sensor array, and a connecting step of arranging and adhering a plurality of the cut sensor arrays in a row on a support base so that the cutting positions are in close contact with each other. To Method of manufacturing a Mejisensa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017602A JPH0763087B2 (en) | 1986-01-29 | 1986-01-29 | Method of manufacturing image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017602A JPH0763087B2 (en) | 1986-01-29 | 1986-01-29 | Method of manufacturing image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62176159A JPS62176159A (en) | 1987-08-01 |
| JPH0763087B2 true JPH0763087B2 (en) | 1995-07-05 |
Family
ID=11948429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61017602A Expired - Fee Related JPH0763087B2 (en) | 1986-01-29 | 1986-01-29 | Method of manufacturing image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0763087B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01211940A (en) * | 1988-02-19 | 1989-08-25 | Fuji Xerox Co Ltd | Cutting of sensor substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539504B2 (en) * | 1971-12-13 | 1978-04-06 | ||
| JPS5578531A (en) * | 1978-12-08 | 1980-06-13 | Mitsubishi Electric Corp | Semiconductor substrate |
| JPH0732441B2 (en) * | 1984-06-08 | 1995-04-10 | 松下電器産業株式会社 | Image sensor chip cutting method |
-
1986
- 1986-01-29 JP JP61017602A patent/JPH0763087B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62176159A (en) | 1987-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |