JPH0749271A - Contact type temperature sensor and manufacture thereof - Google Patents

Contact type temperature sensor and manufacture thereof

Info

Publication number
JPH0749271A
JPH0749271A JP19341893A JP19341893A JPH0749271A JP H0749271 A JPH0749271 A JP H0749271A JP 19341893 A JP19341893 A JP 19341893A JP 19341893 A JP19341893 A JP 19341893A JP H0749271 A JPH0749271 A JP H0749271A
Authority
JP
Japan
Prior art keywords
thermistor
wall
metal container
flat plate
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19341893A
Other languages
Japanese (ja)
Inventor
Takeshi Nagai
彪 長井
Katsumi Sasada
勝視 佐々田
Sadao Nakagawa
貞雄 中川
Shuji Ito
修治 伊藤
Toshiaki Uemura
寿朗 植村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19341893A priority Critical patent/JPH0749271A/en
Publication of JPH0749271A publication Critical patent/JPH0749271A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To provide a contact type temperature sensor of such constitution as to have large insulating distance and rapid heat responsiveness, and the manufacturing method thereof. CONSTITUTION:A temperature sensing unit 21 is formed of a thermistor 17 disposed in contact with one surface of a plate like supporting body 19, a lead wire 18 connected to the thermistor 17, and burned glass 20 covering the thermistor completely. The other surface of the plate like supporting body 19 of this temperature sensing unit 21 and the bottom face inner wall 5 of a bottomed metal container 4 are soldered with titanium foil 23 held between silver solder 22, 22' with a fusing point lower than the burning temperature of the burned glass 20.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は対象物表面と機械的に接
触して、その表面温度を検出する接触型温度センサ及び
その製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact type temperature sensor for mechanically contacting a surface of an object to detect its surface temperature and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来、この種の接触型温度センサは、図
3に示すように、薄膜サーミスタ1を銀ろう箔2、2′
ではさまれたチタン箔3により直接有底状金属容器4の
底面内壁5にろう付けした後、リード線6、6′を接続
し、更に、薄膜サーミスタ1を外部環境から保護するた
めに焼成硝子7を形成して構成されている。薄膜サーミ
スタ1は絶縁性基板8の一方の表面に電極膜9・9′を
形成した後、感温抵抗体膜10を形成して構成される。
前記有底状金属容器4の底面外壁11を対象物の表面に
機械的に接触させて、その表面温度を検出していた(例
えば、特開昭57−169202号公報)。
2. Description of the Related Art Conventionally, as shown in FIG. 3, this type of contact type temperature sensor has a thin film thermistor 1 and silver brazing foils 2 and 2 '.
After being brazed directly to the bottom inner wall 5 of the bottomed metal container 4 by the sandwiched titanium foil 3, the lead wires 6 and 6'are connected, and further the thin film thermistor 1 is protected from the external environment by baking glass. 7 is formed. The thin film thermistor 1 is formed by forming electrode films 9 and 9'on one surface of an insulating substrate 8 and then forming a temperature sensitive resistor film 10.
The bottom surface outer wall 11 of the bottomed metal container 4 is mechanically brought into contact with the surface of an object to detect the surface temperature (for example, Japanese Patent Laid-Open No. 57-169202).

【0003】[0003]

【発明が解決しようとする課題】従来の接触型温度セン
サは上記構成により、高速熱応答性を得ていた。しかし
ながら、上記のような構成では、リード線6・6′と有
底状金属容器4の底面内壁5の間の電気的絶縁距離は絶
縁性基板8の板厚(通常、0.5mm程度)で決められ
るので、絶縁距離が短い、即ち、電気的絶縁性が小さい
という問題があった。特に、梅雨どきのように、湿度の
高い環境下では、絶縁性基板8の側面表面に結露水が付
着し易すくなり、絶縁劣化が問題となる。本発明は、高
速熱応答性を保持しつつ、上記従来の問題点を解消する
もので、従来よりも絶縁性能の優れた構成を提供するこ
とを第1の目的としている。なお、大きな表面積の絶縁
性基板8を作りその表面の中央部の小さな表面積部に電
極膜9・9′および感温抵抗体膜10を形成した場合、
絶縁距離を長くできる。しかし、感温抵抗体膜10をス
パッタ法、蒸着法で形成する場合、形成できる面積が限
られるので、このような構成では薄膜サーミスタ1の形
成できる個数が減少するという欠点が生じ実用化できて
いないのが現状である。
The conventional contact-type temperature sensor has a high-speed thermal response due to the above structure. However, in the above-described configuration, the electrical insulation distance between the lead wires 6 and 6'and the bottom inner wall 5 of the bottomed metal container 4 depends on the thickness of the insulating substrate 8 (usually about 0.5 mm). Since it is determined, there is a problem that the insulation distance is short, that is, the electrical insulation is small. In particular, in a high humidity environment such as rainy season, dew condensation water easily adheres to the side surface of the insulating substrate 8 and insulation deterioration becomes a problem. SUMMARY OF THE INVENTION The first object of the present invention is to solve the above-mentioned conventional problems while maintaining high-speed thermal response, and to provide a structure having a better insulation performance than the conventional one. When the insulating substrate 8 having a large surface area is formed and the electrode films 9 and 9'and the temperature sensitive resistor film 10 are formed on the small surface area of the central portion of the surface,
The insulation distance can be increased. However, when the temperature-sensitive resistor film 10 is formed by the sputtering method or the vapor deposition method, the area that can be formed is limited. Therefore, such a configuration has a drawback that the number of the thin film thermistors 1 that can be formed is reduced and is practically used. The current situation is that there are none.

【0004】また、従来の接触型温度センサは上記構成
により、薄膜サーミスタ1を有底状金属容器4の底面内
壁5にろう付けした後、リード線6・6′を接続した
り、焼成硝子7を形成していた。しかし、薄膜サーミス
タ1が有底状金属容器4の側壁12の頂点部13よりも
底面内壁5側に位置するので、これら接続作業や形成作
業は、有底状金属容器4の側壁12により妨害される。
この結果、これら作業は、熟練を必要とし、また、作業
の自動化も困難であった。本発明は、これら作業の容易
な構成、自動化の可能な構成を提供することを第2の目
的にしている。
In the conventional contact type temperature sensor, the thin film thermistor 1 is brazed to the inner wall 5 of the bottom surface of the bottomed metal container 4 and then the lead wires 6 and 6'are connected or the baking glass 7 is used. Had formed. However, since the thin film thermistor 1 is located closer to the bottom inner wall 5 side than the apex portion 13 of the side wall 12 of the bottomed metal container 4, these connecting and forming operations are hindered by the side wall 12 of the bottomed metal container 4. It
As a result, these operations require skill and it is difficult to automate the operations. A second object of the present invention is to provide a structure that facilitates these operations and a structure that can be automated.

【0005】[0005]

【課題を解決するための手段】上記第1の目的を達成す
るための第1の技術手段として絶縁性の平板状支持体の
一方の表面に接触して固着されたサーミスタと、前記サ
ーミスタに接続するリード線と前記サーミスタを全面的
に被覆する焼成硝子とで感温ユニットを形成し、前記平
板状支持体の他の表面と前記底面内壁間に前記焼成硝子
の焼成温度よりも低い融点の銀ろうではさまれたチタン
箔でろう付けする構成としている。
As a first technical means for achieving the above-mentioned first object, a thermistor fixed in contact with one surface of an insulative flat plate-like support, and connected to the thermistor Forming a temperature sensitive unit with the lead wire and the calcined glass that entirely covers the thermistor, and has a melting point lower than the calcining temperature of the calcined glass between the other surface of the flat support and the inner wall of the bottom surface. The brazing is done with a titanium foil sandwiched between waxes.

【0006】また第2の技術手段として前記平板状支持
体の一方の表面に接触して固着されたサーミスタと、前
記サーミスタに接続するリード線と、前記サーミスタを
全面的に被覆する焼成硝子とで感温ユニットを形成し、
前記金属容器はチタンで形成するとともに前記平板状支
持体の他の表面と前記底面内壁間に前記焼成硝子の焼成
温度よりも低い融点の銀ろうでろう付けする構成として
いる。
As a second technical means, a thermistor fixed in contact with one surface of the flat support, a lead wire connected to the thermistor, and a baking glass covering the entire surface of the thermistor. Forming a temperature sensitive unit,
The metal container is made of titanium and is brazed between the other surface of the plate-shaped support and the inner wall of the bottom surface with silver brazing material having a melting point lower than the baking temperature of the baking glass.

【0007】また上記第2の目的を達成するための第3
の技術手段として前記平板状支持体の一方の表面上にリ
ード線を接続したサーミスタを配置するとともに焼成硝
子ペーストを全面的に被覆した状態で乾燥させた後前記
平板状支持体の他の表面と前記底面内壁間に、硝子ペー
ストの焼成温度より低い融点の銀ろう箔とチタン箔と銀
ろう箔を積層し、不活性ガス雰囲気中で硝子ペーストを
焼成する加熱工程でサーミスタを金属容器に固着させる
構成としている。
A third aspect for achieving the above second object
As a technical means of arranging a thermistor to which a lead wire is connected on one surface of the flat plate-shaped support, and drying the baked glass paste in a state where it is entirely covered with the other surface of the flat plate-shaped support. Between the inner walls of the bottom surface, a silver brazing foil having a melting point lower than the firing temperature of the glass paste, a titanium foil, and a silver brazing foil are laminated, and the thermistor is fixed to a metal container in a heating step of firing the glass paste in an inert gas atmosphere. It is configured.

【0008】また第4の技術手段として前記平板状支持
体の一方の表面上にリード線を接続したサーミスタを配
置するとともに焼成硝子ペーストを全面的に被覆した状
態で乾燥および焼成を経て感温ユニットを形成した後
に、前記平板状支持体の他の表面と前記底面内壁間に、
焼成温度より低い融点の銀ろう箔とチタン箔と銀ろう箔
を積層し、不活性ガス雰囲気中で焼成温度より低い温度
に加熱する加熱工程でサーミスタを金属容器に固着させ
る構成としている。
As a fourth technical means, a thermistor to which a lead wire is connected is arranged on one surface of the flat plate-like support, and a temperature-sensing unit is obtained through drying and baking with the baking glass paste entirely covered. After forming, between the other surface of the flat plate-shaped support and the bottom inner wall,
The thermistor is fixed to a metal container in a heating process in which a silver brazing foil having a melting point lower than the firing temperature, a titanium foil, and a silver brazing foil are laminated and heated to a temperature lower than the firing temperature in an inert gas atmosphere.

【0009】[0009]

【作用】本発明は上記した第1および第2の技術手段に
より絶縁距離がきわめて大きくなり熱応答性が従来と差
がなくて絶縁性能の優れた接触型温度センサとなる。
The present invention provides a contact-type temperature sensor having excellent insulation performance because the insulation distance becomes extremely large by the above-mentioned first and second technical means and the thermal response is not different from the conventional one.

【0010】また第3および第4の技術手段により第1
および第2の技術手段を容易に実現でき、感温ユニット
の作成作業は有底状金属容器内でする必要がなくなる。
The first and third technical means can be used.
Also, the second technical means can be easily realized, and the work of making the temperature-sensitive unit does not need to be performed in the bottomed metal container.

【0011】[0011]

【実施例】以下、本発明の1実施例について図1および
図2を参照しながら第1および第2の技術手段について
説明する。なお従来例と同一部分には同一符号をつけ説
明は省略する。平板状アルミナ基板14の一方の表面に
一対の電極膜15・15′と感温抵抗体膜16とから成
る薄膜サーミスタ17を準備した。平板状アルミナ基板
14の形状は、幅2mm・長さ4mm・厚さ0.5mm
である。この薄膜サーミスタ17の一対の電極膜15・
15′に一対のリード線18・18′をそれぞれ接続し
た後、平板状アルミナ支持体19に薄膜サーミスタ17
を積層し、次に、薄膜サーミスタ17を全面的に被覆し
て焼成硝子20を形成し、感温ユニット21を構成し
た。感温ユニットの形成作業は、平板状アルミナ支持体
19の表面上でなされるので、作業が容易であり、自動
化も可能である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The first and second technical means of one embodiment of the present invention will be described below with reference to FIGS. The same parts as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted. A thin film thermistor 17 including a pair of electrode films 15 and 15 'and a temperature sensitive resistor film 16 was prepared on one surface of the flat alumina substrate 14. The flat alumina substrate 14 has a width of 2 mm, a length of 4 mm, and a thickness of 0.5 mm.
Is. The pair of electrode films 15 of the thin film thermistor 17
After connecting a pair of lead wires 18 and 18 'to 15' respectively, a thin film thermistor 17 is attached to the flat plate alumina support 19.
Then, the thin film thermistor 17 was entirely covered to form the baking glass 20 to form the temperature sensitive unit 21. The work of forming the temperature-sensitive unit is performed on the surface of the flat plate-shaped alumina support 19, so that the work is easy and can be automated.

【0012】電極膜15・15′は、厚膜用導電性ペー
スト、例えば、Agペースト・Ag−Pdペースト・A
u−Ptペーストなどを印刷した後、800℃以上の高
温で焼成して形成される。感温抵抗体膜16として、複
合金属酸化物・Ge・Si、SiCなどの蒸着膜・スパ
ッタ膜・焼成厚膜など種々用いられるが、なかでもSi
Cスパッタ感温抵抗体膜は500℃の耐熱性を有すると
共に0−500℃の広い温度範囲を検出するのに適した
抵抗温度特性を有する点で優れている。また、焼成硝子
20は、薄膜サーミスタ17の周囲を全面的に厚膜用硝
子ペーストで被覆した後、700℃以上の高温で焼成し
て形成される。焼成硝子20の厚さは1〜3mmであ
る。平板状アルミナ支持体19の形状は平板状アルミナ
基板14よりも大きく選ばれ、ここでは直径10mm、
厚さ0.5mmとした。
The electrode films 15 and 15 'are made of a thick film conductive paste, for example, Ag paste, Ag-Pd paste, A.
It is formed by printing u-Pt paste or the like and then firing it at a high temperature of 800 ° C. or higher. As the temperature-sensitive resistor film 16, various materials such as a composite metal oxide, a vapor deposition film of Ge, Si and SiC, a sputtered film, a baked thick film, etc. are used.
The C sputter temperature-sensitive resistor film is excellent in that it has a heat resistance of 500 ° C. and a resistance temperature characteristic suitable for detecting a wide temperature range of 0 to 500 ° C. The baking glass 20 is formed by covering the entire periphery of the thin film thermistor 17 with a thick film glass paste and baking at a high temperature of 700 ° C. or higher. The thickness of the baking glass 20 is 1 to 3 mm. The shape of the flat plate-shaped alumina support 19 is selected to be larger than that of the flat plate-shaped alumina substrate 14, and here, the diameter is 10 mm,
The thickness was 0.5 mm.

【0013】感温ユニット21を形成した後、前記平板
状アルミナ支持体19の他の表面とステンレスで構成さ
れた有底状金属容器4の内底面5を、前記焼成硝子20
の焼成温度より低い融点の銀ろう22・22′ではさま
れたチタン箔23でろう付けした。銀ろう材として、融
点が700℃以下のもの、例えば、銀ろうJIS規格番
号BAg1(液相線温度約620℃)・BAg−2(液
相線温度約700℃)・BAg−3(液相線温度約69
0℃)などが適している。
After forming the temperature-sensitive unit 21, the other surface of the flat plate-shaped alumina support 19 and the inner bottom surface 5 of the bottomed metal container 4 made of stainless steel are attached to the baking glass 20.
The brazing was performed with a titanium foil 23 sandwiched between silver solders 22 and 22 'having a melting point lower than the firing temperature of. A silver brazing material having a melting point of 700 ° C. or lower, for example, silver brazing JIS standard number BAg1 (liquidus temperature about 620 ° C.), BAg-2 (liquidus temperature about 700 ° C.), BAg-3 (liquid phase) Line temperature about 69
0 ° C) is suitable.

【0014】本発明はこの構成によって、平板状絶縁性
支持体19の形状を薄膜サーミスタ17より大きく選ぶ
ことができる。直径10mm、厚さ0.5mmの平板状
アルミナ支持体19のほぼ中央部に薄膜サーミスタ17
を配置した場合、リード線18・18′と有底状金属容
器4の底面内壁5の間の電気的絶縁距離は3〜4mmで
あった。このように、絶縁距離は従来のそれ(通常、
0.5mm程度)に比べ5倍以上(2.5mm以上)容
易に大きくできる。この結果、高い絶縁性を容易に得ら
れる。
With this configuration, the present invention allows the shape of the flat plate-shaped insulating support 19 to be selected larger than that of the thin film thermistor 17. A thin film thermistor 17 is provided substantially in the center of a flat alumina support 19 having a diameter of 10 mm and a thickness of 0.5 mm.
, The electrical insulation distance between the lead wires 18 and 18 'and the bottom inner wall 5 of the bottomed metal container 4 was 3 to 4 mm. In this way, the insulation distance is
The size can be easily increased 5 times or more (2.5 mm or more) compared to about 0.5 mm). As a result, high insulation can be easily obtained.

【0015】本発明の接触型サーミスタの熱応答性を次
のようにして測定した。最初、室温(T0 ℃)に保たれ
た接触型温度センサの有底状金属容器4の外底面11
を、お湯(T℃、約95℃)で満たされたアルミニウム
なべのなべ底に接触させたときを起点にして、サーミス
タ17の温度がT0 +0.9(T−T0 )に到達する時
間(90%応答時間)で熱応答性を評価した。従来の接
触型温度センサの90%熱応答時間は4〜5秒であり、
本発明のそれは5〜6秒であった。本発明の接触型温度
センサの薄膜サーミスタ17から有底状金属容器4の外
底面11に至る素子部熱抵抗は、従来のそれと比べ、主
として、平板状絶縁性支持体19の厚さに起因する熱抵
抗だけ大きくなるので、熱応答性は遅くなる。しかし、
上述した実用的90%熱応答時間は、なべと有底状金属
容器4の外底面11の間の接触熱抵抗の影響を強く受
け、前記素子部熱抵抗による熱応答時間への影響は小さ
い。この結果、本発明の接触型サーミスタの熱応答時間
は、従来のそれに比べ約1秒程度の遅れしか示さないと
考えられる。この遅れは、実用的には問題にならない。
The thermal response of the contact type thermistor of the present invention was measured as follows. First, the outer bottom surface 11 of the bottomed metal container 4 of the contact type temperature sensor kept at room temperature (T 0 ° C)
Is the time when the temperature of the thermistor 17 reaches T 0 +0.9 (T−T 0 ), starting from the point of contact with the bottom of an aluminum pan filled with hot water (T ° C., about 95 ° C.). The thermal response was evaluated by (90% response time). The 90% thermal response time of the conventional contact type temperature sensor is 4 to 5 seconds,
That of the present invention was 5-6 seconds. The thermal resistance of the element portion from the thin film thermistor 17 of the contact-type temperature sensor of the present invention to the outer bottom surface 11 of the bottomed metal container 4 is mainly due to the thickness of the flat insulating support 19 as compared with the conventional one. Since only the thermal resistance increases, the thermal response becomes slow. But,
The above-mentioned practical 90% thermal response time is strongly influenced by the contact thermal resistance between the pan and the outer bottom surface 11 of the bottomed metal container 4, and the thermal response time due to the thermal resistance of the element is small. As a result, the thermal response time of the contact type thermistor of the present invention is considered to show only a delay of about 1 second as compared with the conventional one. This delay is not a problem in practice.

【0016】前述した説明は、ステンレスで構成された
有底状金属容器4を用いた場合についての内容である
が、チタンで構成された有底状金属容器24を用いた場
合、図2に示すように、簡素なろう付け構成でよいとい
う利点が生じる。即ち、平板状絶縁性支持体19とチタ
ンで構成された有底状金属容器24の底面内壁5はろう
材22のみでろう付けできるからである。しかし、チタ
ンはステンレスに比べ、機械的強度において劣るので、
実用的応用はある程度の制限を受ける。
The above description is about the case where the bottomed metal container 4 made of stainless steel is used, but the case where the bottomed metal container 24 made of titanium is used is shown in FIG. As described above, there is an advantage that a simple brazing structure is sufficient. That is, the bottom inner wall 5 of the bottomed metal container 24 made of the flat insulating support 19 and titanium can be brazed only with the brazing material 22. However, titanium is inferior in mechanical strength to stainless steel, so
Practical applications are limited to some extent.

【0017】また、前述した説明は、薄膜サーミスタ1
7を用いた内容であるが、例えば、金属酸化物サーミス
タを用いても同様のことが可能であることは、明らかで
ある。しかし、金属酸化物サーミスタは、通常、円筒形
状やそれと類似の形状であるので、平板状絶縁性支持体
19の表面に配置した場合、両者は線接触する。他方、
薄膜サーミスタ17は、板状の形状があるので、両者は
面接触する。このため、熱伝導は、薄膜サーミスタ17
の方が金属酸化物サーミスタより優れている。
Further, the above description is based on the thin film thermistor 1.
7 is used, but it is clear that the same thing can be done by using a metal oxide thermistor, for example. However, since the metal oxide thermistor usually has a cylindrical shape or a shape similar thereto, when the metal oxide thermistor is arranged on the surface of the flat plate-shaped insulating support 19, the two make line contact with each other. On the other hand,
Since the thin film thermistor 17 has a plate-like shape, the two are in surface contact with each other. For this reason, heat conduction is achieved by the thin film thermistor
Are superior to metal oxide thermistors.

【0018】次に第3および第4の技術手段について説
明する。焼成硝子20は、通常、厚膜用硝子ペーストを
所定の場所に塗布した後、高温で熱処理する硝子焼成工
程を経て製造される。この硝子焼成工程の焼成温度は7
00℃程度が好ましい。これ以上の焼成温度では、サー
ミスタ17の焼成前後における特性変化が著しく大きく
なり、また、これ以下の焼成温度では、焼成硝子20の
耐熱性が、本発明の接触型温度センサに要求される35
0℃の耐熱性を満足できず、クラックが発生し易くなる
からである。他方、ろう付けも不活性ガス雰囲気中で高
温で熱処理するろう付け焼成工程を経てなされる。従っ
て、本発明の接触型温度センサの製造は、平板状絶縁性
支持体19の一方の表面上にサーミスタ17と前記サー
ミスタ17に接続されたリード線18・18′を配置
し、次にサーミスタ17を厚膜用硝子ペーストで全面的
に被覆し、空気中約100℃で乾燥した後、前記平板状
絶縁性支持体19の他の表面と有底状金属容器4の底面
内壁5の間に、融点700℃以下の銀ろう箔22とチタ
ン箔23と銀ろう箔22′を積層した後、この積層物を
不活性ガス雰囲気中で約700℃に加熱することによ
り、前記焼成硝子ペーストの硝子焼成工程および前記感
温ユニットと前記有底状金属容器4の底面内壁5のろう
付け焼成工程を1回の加熱工程で同時に処理することが
好ましい。これにより、製造工程の簡素化ができる。し
かし、この製造工程は、不活性ガス雰囲気中で焼成でき
る厚膜用硝子ペーストを必要とする点で一般的でない。
即ち、一般的厚膜用硝子ペーストは、通常、空気中で焼
成される。不活性ガス雰囲気中で焼成するには、ペース
トに含まれる樹脂成分を適切な樹脂成分に変える必要が
ある。このような特殊なペーストは、種類も限られてお
り、一般的でない。
Next, the third and fourth technical means will be described. The baking glass 20 is usually manufactured through a glass baking step in which a thick film glass paste is applied to a predetermined place and then heat-treated at a high temperature. The firing temperature of this glass firing process is 7
It is preferably about 00 ° C. If the firing temperature is higher than this, the characteristic change of the thermistor 17 before and after the firing becomes significantly large, and if the firing temperature is lower than this, the heat resistance of the firing glass 20 is required for the contact temperature sensor of the present invention.
This is because the heat resistance at 0 ° C. cannot be satisfied and cracks easily occur. On the other hand, brazing is also performed through a brazing firing process in which heat treatment is performed at a high temperature in an inert gas atmosphere. Therefore, in the manufacture of the contact type temperature sensor of the present invention, the thermistor 17 and the lead wires 18 and 18 'connected to the thermistor 17 are arranged on one surface of the flat plate-shaped insulating support 19, and then the thermistor 17 is arranged. Is entirely covered with a glass paste for thick film and dried in air at about 100 ° C., then, between the other surface of the flat insulating support 19 and the bottom inner wall 5 of the bottomed metal container 4, After laminating the silver brazing foil 22, the titanium foil 23, and the silver brazing foil 22 ′ having a melting point of 700 ° C. or less, the laminated body is heated to about 700 ° C. in an inert gas atmosphere, and thus the glass firing of the firing glass paste is performed. It is preferable that the step and the temperature-sensing unit and the brazing and firing step of the bottom inner wall 5 of the bottomed metal container 4 are simultaneously processed in one heating step. Thereby, the manufacturing process can be simplified. However, this manufacturing process is not general because it requires a thick film glass paste that can be fired in an inert gas atmosphere.
That is, a general thick film glass paste is usually fired in air. For firing in an inert gas atmosphere, it is necessary to change the resin component contained in the paste to an appropriate resin component. Such special pastes are limited in types and are not common.

【0019】このような場合、本発明の接触型温度セン
サの製造は、平板状絶縁性支持体19の一方の表面上に
サーミスタ17と前記サーミスタ17に接続されたリー
ド線18・18′を配置し、次にサーミスタ17を厚膜
用硝子ペーストで全面的に被覆し、空気中約100℃で
乾燥した後、空気中約700℃で焼成して感温ユニット
を作成した後、前記平板状絶縁性支持体19の他の表面
と有底状金属容器4の底面内壁5の間に、融点700℃
以下の銀ろう箔22とチタン箔23と銀ろう箔22′を
積層した後、この積層物を不活性ガス雰囲気中で700
℃以下で加熱して前記感温ユニットと前記有底状金属容
器4の前記底面内壁5をろう付けすることが好ましい。
この製造工程は、特殊なペーストを必要としない。ま
た、従来の接触型温度センサの製造工程、即ち、薄膜サ
ーミスタ1を有底状金属容器4の底面内壁5にろう付け
した後、リード線6・6′を接続し、その後焼成硝子7
を形成するという製造工程に比べ、本発明の製造工程
は、作業の容易な工程であり、また、工程の自動化も可
能である。従来の製造工程では、薄膜サーミスタ1は有
底状金属容器4の側壁12の頂点部13よりも底面内壁
5側に位置するので、これら接続作業や形成作業は、有
底状金属容器4の側壁12により妨害される。この結
果、これら作業は、熟練を必要とし、また、作業の自動
化も困難であった。本発明の製造工程は、感温ユニット
をあらかじめ作成した後にろう付けができる。感温ユニ
ットの作成作業は、平板状絶縁性支持体19の表面でな
されるので、作業の妨害物が無く、リード線の接続作業
や焼成硝子の形成作業は容易になるとともにこれら作業
の自動化も可能になる。
In such a case, in the manufacture of the contact type temperature sensor of the present invention, the thermistor 17 and the lead wires 18 and 18 'connected to the thermistor 17 are arranged on one surface of the flat insulating support 19. Next, the thermistor 17 is entirely covered with a thick film glass paste, dried in air at about 100 ° C., and then fired in air at about 700 ° C. to form a temperature-sensitive unit, and then the flat plate-shaped insulation is used. A melting point of 700 ° C. is formed between the other surface of the flexible support 19 and the bottom inner wall 5 of the bottomed metal container 4.
After laminating the following silver brazing foil 22, titanium foil 23 and silver brazing foil 22 ', the laminated body is placed in an inert gas atmosphere at 700
It is preferable that the temperature sensitive unit and the bottom inner wall 5 of the bottomed metal container 4 are brazed by heating at a temperature of not higher than ° C.
This manufacturing process does not require any special paste. In addition, the manufacturing process of the conventional contact type temperature sensor, that is, after brazing the thin film thermistor 1 to the bottom inner wall 5 of the bottomed metal container 4, the lead wires 6 and 6 ′ are connected, and then the baking glass 7 is used.
The manufacturing process of the present invention is easier to perform than the manufacturing process of forming the structure, and the process can be automated. In the conventional manufacturing process, since the thin film thermistor 1 is located closer to the bottom inner wall 5 side than the apex portion 13 of the side wall 12 of the bottomed metal container 4, these connecting and forming operations are performed on the side wall of the bottomed metal container 4. Blocked by 12. As a result, these operations require skill and it is difficult to automate the operations. In the manufacturing process of the present invention, brazing can be performed after the temperature-sensitive unit is prepared in advance. Since the work of forming the temperature-sensitive unit is performed on the surface of the flat plate-shaped insulating support 19, there is no obstacle to the work, the work of connecting the lead wires and the work of forming the baking glass are facilitated, and the work is automated. It will be possible.

【0020】[0020]

【発明の効果】以上述べて来たように、本発明の第1の
技術手段により次に示す効果が得られる。
As described above, the following effects can be obtained by the first technical means of the present invention.

【0021】(1)平板状絶縁性支持体の形状をサーミ
スタ素子より大きく選ぶことができるので、絶縁距離は
従来のそれ(通常、0.5mm程度)に比べ5倍以上
(2.5mm以上)容易に大きくできる。この結果、高
い絶縁性を容易に得られる。
(1) Since the shape of the flat insulating support can be selected larger than that of the thermistor element, the insulation distance is 5 times or more (2.5 mm or more) as compared with the conventional one (usually about 0.5 mm). Can be easily enlarged. As a result, high insulation can be easily obtained.

【0022】接触型温度センサで絶縁劣化が起こると、
例えばガステーブルで鍋底の温度を検出して火力を調節
する場合であれば、早切れを起して調理ができなくなる
欠点が生じたが、本発明によりこのようなことが起らず
品質が安定する。
When insulation deterioration occurs in the contact type temperature sensor,
For example, if the temperature of the pan bottom is detected on a gas table and the heating power is adjusted, there is a drawback that premature cutting may occur and cooking may not be possible. To do.

【0023】(2)サーミスタ素子と有底状金属容器の
内底面は平板状絶縁性支持体を介してろう付け接続され
ているので、両者の間の熱抵抗を小さく保持できる。こ
の結果、高速熱応答性を確保できる。
(2) Since the thermistor element and the inner bottom surface of the bottomed metal container are brazed to each other via the flat insulating support, the thermal resistance between them can be kept small. As a result, high-speed thermal response can be secured.

【0024】次に第2の技術手段により有底状金属容器
がステンレスからチタンとなって材料費が少し高くなる
とともに、機械的精度が少し劣るので応用にある程度制
限を受けるが、銀ろう22′とチタン箔23が不必要と
なり感温ユニットと有底状金属容器との固着がきわめて
容易となる。
Next, according to the second technical means, the bottomed metal container is changed from stainless steel to titanium, the material cost is a little high, and the mechanical accuracy is a little inferior, so the application is limited to some extent. Since the titanium foil 23 is unnecessary, it is extremely easy to fix the temperature-sensitive unit and the bottomed metal container.

【0025】次に第3および第4の技術手段により第1
および第2の技術手段を容易に実現できる。すなわち銀
ろうの融点は焼成硝子の焼成温度より低く選ばれている
ので、ろう付け温度は焼成硝子の焼成温度よりも低い温
度で行うことにより、感温ユニットをあらかじめ作成し
た後にろう付けができる。感温ユニットの作成作業は、
平板状絶縁性支持体の表面でなされるので、作業の妨害
物が無く、リード線の接続作業や焼成硝子の形成作業は
容易になるとともにこれら作業の自動化も可能になる。
Next, by the third and fourth technical means, the first
And the second technical means can be easily realized. That is, since the melting point of silver solder is selected to be lower than the baking temperature of the baking glass, the brazing can be performed after the temperature-sensitive unit is prepared in advance by performing the brazing temperature at a temperature lower than the baking temperature of the baking glass. The work of creating the temperature sensitive unit is
Since the work is performed on the surface of the flat insulating support, there is no obstacle to the work, the work of connecting the lead wire and the work of forming the baking glass are facilitated, and the work can be automated.

【0026】なお第3の技術手段では硝子ペーストが特
殊となるが、1回の焼成工程で作ることができるのでき
わめて経済的であり数量が多い時には極めて有利とな
る。また第4の技術手段では2回の焼成工程が必要であ
るが特殊なペーストを必要とせず数量が少ない時に有利
となる。
Although the glass paste is special in the third technical means, it is extremely economical because it can be produced by one firing step, and is extremely advantageous when the number is large. Further, the fourth technical means requires two firing steps, but is advantageous when the quantity is small because no special paste is required.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の1実施例における接触型温度センサの
断面図
FIG. 1 is a sectional view of a contact-type temperature sensor according to an embodiment of the present invention.

【図2】本発明の他の実施例における接触型温度センサ
の断面図
FIG. 2 is a sectional view of a contact type temperature sensor according to another embodiment of the present invention.

【図3】従来の接触型温度センサを示す断面図FIG. 3 is a sectional view showing a conventional contact-type temperature sensor.

【符号の説明】[Explanation of symbols]

4 有底状金属容器 5 底面内壁 11 底面外壁 17 サーミスタ(薄膜サーミスタ) 18 リード線 19 平板状支持体 20 焼成硝子 21 感温ユニット 22、22′ 銀ろう 23 チタン箔 4 Bottomed Metal Container 5 Bottom Inner Wall 11 Bottom Outer Wall 17 Thermistor (Thin Film Thermistor) 18 Lead Wire 19 Flat Plate Support 20 Firing Glass 21 Temperature Sensing Unit 22, 22 'Silver Wax 23 Titanium Foil

フロントページの続き (72)発明者 伊藤 修治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 植村 寿朗 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Front page continued (72) Inventor Shuji Ito 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】底面内壁にサーミスタを固着するとともに
底面外壁に被測定物に接する接触面を有する有底状金属
容器と、前記金属容器とサーミスタとを絶縁する平板状
支持体とを備え、前記平板状支持体の一方の表面に接触
して固着されたサーミスタと、前記サーミスタに接続す
るリード線と、前記サーミスタを全面的に被覆する焼成
硝子とで感温ユニットを形成し、前記平板状支持体の他
の表面と前記底面内壁間に前記焼成硝子の焼成温度より
も低い融点の銀ろうではさまれたチタン箔でろう付けす
る構成とした接触型温度センサ。
1. A bottomed metal container having a thermistor fixed to the inner wall of the bottom surface and a contact surface contacting the object to be measured on the outer wall of the bottom surface, and a flat plate-shaped support for insulating the metal container and the thermistor. A temperature sensitive unit is formed by a thermistor fixed in contact with one surface of a flat plate-shaped support, a lead wire connected to the thermistor, and a baking glass that entirely covers the thermistor. A contact-type temperature sensor configured to be brazed between the other surface of the body and the inner wall of the bottom surface with a titanium foil sandwiched between silver brazing fillers having a melting point lower than the firing temperature of the firing glass.
【請求項2】底面内壁にサーミスタを固着するとともに
底面外壁に被測定物に接する接触面を有する有底状金属
容器と、前記金属容器とサーミスタとを絶縁する平板状
支持体とを備え、前記平板状支持体の一方の表面に接触
して固着されたサーミスタと、前記サーミスタに接続す
るリード線と、前記サーミスタを全面的に被覆する焼成
硝子とで感温ユニットを形成し、前記金属容器はチタン
で形成するとともに前記平板状支持体の他の表面と前記
底面内壁間に前記焼成硝子の焼成温度よりも低い融点の
銀ろうでろう付けする構成とした接触型温度センサ。
2. A bottomed metal container having a thermistor fixed to an inner wall of the bottom surface and a contact surface contacting an object to be measured on an outer wall of the bottom surface, and a flat plate-like support for insulating the metal container from the thermistor, A thermistor fixed in contact with one surface of the flat plate-shaped support, a lead wire connected to the thermistor, and a baking glass that entirely covers the thermistor form a temperature sensitive unit, and the metal container is A contact-type temperature sensor formed of titanium and brazed between the other surface of the plate-shaped support and the inner wall of the bottom surface with silver brazing having a melting point lower than the firing temperature of the firing glass.
【請求項3】サーミスタは薄膜サーミスタで構成した請
求項1または請求項2記載の接触型温度センサ。
3. The contact type temperature sensor according to claim 1, wherein the thermistor is a thin film thermistor.
【請求項4】底面内壁にサーミスタを装着するとともに
底面外壁に被測定物に接する接触面を有する有底状金属
容器と、前記金属容器とサーミスタとを絶縁する平板状
支持体とを備え、前記平板状支持体の一方の表面上にリ
ード線を接続したサーミスタを配置するとともに焼成硝
子ペーストを全面的に被覆した状態で乾燥させた後、前
記平板状支持体の他の表面と前記底面内壁間に、硝子ペ
ーストの焼成温度より低い融点の銀ろう箔とチタン箔と
銀ろう箔を積層し、不活性ガス雰囲気中で硝子ペースト
を焼成する加熱工程でサーミスタを金属容器に固着させ
る接触型温度センサの製造方法。
4. A bottomed metal container having a thermistor mounted on the inner wall of the bottom surface and having a contact surface for contacting the object to be measured on the outer wall of the bottom surface, and a flat plate-shaped support for insulating the metal container and the thermistor, After placing a thermistor to which a lead wire is connected on one surface of the flat plate-shaped support and drying it in a state where the baking glass paste is entirely covered, between the other surface of the flat plate-shaped support and the inner wall of the bottom surface. , A silver brazing foil having a melting point lower than the firing temperature of the glass paste, a titanium foil, and a silver brazing foil are laminated, and the thermistor is fixed to the metal container in the heating process of firing the glass paste in an inert gas atmosphere. Manufacturing method.
【請求項5】底面内壁にサーミスタを装着するとともに
底面外壁に被測定物に接する接触面を有する有底状金属
容器と、前記金属容器とサーミスタとを絶縁する平板状
支持体とを備え、前記平板状支持体の一方の表面上にリ
ード線を接続したサーミスタを配置するとともに焼成硝
子ペーストを全面的に被覆した状態で乾燥および焼成を
経て感温ユニットを形成した後に、前記平板状支持体の
他の表面と前記底面内壁間に、前記焼成温度より低い融
点の銀ろう箔とチタン箔と銀ろう箔を積層し、不活性ガ
ス雰囲気中で前記焼成温度より低い温度に加熱する加熱
工程でサーミスタを金属容器に固着させる接触型温度セ
ンサの製造方法。
5. A bottomed metal container having a thermistor mounted on the inner wall of the bottom surface and having a contact surface for contacting an object to be measured on the outer wall of the bottom surface, and a flat plate-shaped support for insulating the metal container and the thermistor. After a thermistor having lead wires connected to one surface of the flat plate-shaped support is arranged and a temperature sensitive unit is formed through drying and baking in a state where the baking glass paste is entirely covered, the flat plate-shaped support is Between the other surface and the inner wall of the bottom surface, a silver brazing foil having a melting point lower than the firing temperature, a titanium foil, and a silver brazing foil are laminated, and a thermistor is used in a heating step of heating to a temperature lower than the firing temperature in an inert gas atmosphere. Method for manufacturing a contact-type temperature sensor in which a metal is fixed to a metal container.
JP19341893A 1993-08-04 1993-08-04 Contact type temperature sensor and manufacture thereof Pending JPH0749271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19341893A JPH0749271A (en) 1993-08-04 1993-08-04 Contact type temperature sensor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19341893A JPH0749271A (en) 1993-08-04 1993-08-04 Contact type temperature sensor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0749271A true JPH0749271A (en) 1995-02-21

Family

ID=16307641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19341893A Pending JPH0749271A (en) 1993-08-04 1993-08-04 Contact type temperature sensor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0749271A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200475724Y1 (en) * 2013-08-07 2014-12-29 금호전자 주식회사 Structure of thermister sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200475724Y1 (en) * 2013-08-07 2014-12-29 금호전자 주식회사 Structure of thermister sensor

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