JPH0736399B2 - Cleaning rinse tank for semiconductor wafers - Google Patents
Cleaning rinse tank for semiconductor wafersInfo
- Publication number
- JPH0736399B2 JPH0736399B2 JP3350731A JP35073191A JPH0736399B2 JP H0736399 B2 JPH0736399 B2 JP H0736399B2 JP 3350731 A JP3350731 A JP 3350731A JP 35073191 A JP35073191 A JP 35073191A JP H0736399 B2 JPH0736399 B2 JP H0736399B2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- pure water
- water
- cleaning
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、ウエハを純水で洗浄す
るときに用いられる半導体ウエハ用洗浄リンス槽に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning rinse tank for semiconductor wafers used when cleaning wafers with pure water.
【0002】[0002]
【従来技術】半導体製造では、空気中に含まれる塵挨、
作業者や各種装置から持込まれる不純物などがウエハに
付着する以外に、エッチング工程で使用した原材料など
の付着物、更には薬液を使用した洗浄でも薬液自体の付
着が生じ、これらを除去するために純水で流水洗浄する
工程が必須となる。通常は、例えば硫酸と過酸化水素の
高温混液などの薬液を入れた薬液槽と、供給される純水
で洗い流すための洗浄リンス槽とを用意しておき、ウエ
ハを薬液槽から洗浄リンス槽へと順次に移して洗浄す
る。純水は、厳密にはあらゆる物質を微量ではあるが溶
かす能力を持ち、これを用いた流水洗浄は薬液洗浄で用
いた薬液などを置換除去するだけでなく、最終仕上げ洗
浄として純水自体による洗浄能力を期待した精密洗浄工
程でもある。従来における洗浄リンス槽の基本構造とし
ては、図4,図5に例示する如くウエハcに向けた吐出
口を有する供給管bを槽aの底部あるいは内側壁に配置
し、供給管bの単一あるいは複数の吐出口から純水を吐
き出しウエハcを流水洗浄すると共に、過剰水を槽aの
上部からオーバーフローさせるものが多い。2. Description of the Related Art In semiconductor manufacturing, dust contained in air,
In addition to impurities such as impurities brought in by workers and various equipment from adhering to the wafer, deposits such as raw materials used in the etching process, and even cleaning with a chemical solution cause the chemical solution itself to adhere, so that they can be removed. The step of washing with running pure water is essential. Usually, for example, a chemical bath containing a chemical such as a high temperature mixture of sulfuric acid and hydrogen peroxide and a cleaning rinse bath for flushing with the supplied pure water are prepared, and the wafer is transferred from the chemical bath to the cleaning rinse bath. And sequentially move to wash. Strictly speaking, pure water has the ability to dissolve all substances, albeit in trace amounts, and running water cleaning using this not only replaces and removes the chemicals used in chemical cleaning, but also uses pure water itself as the final finishing cleaning. It is also a precision cleaning process that expects the ability. As a basic structure of a conventional cleaning rinse tank, as shown in FIGS. 4 and 5, a supply pipe b having a discharge port toward the wafer c is arranged at the bottom or the inner wall of the tank a, and a single supply pipe b is provided. Alternatively, in many cases, pure water is discharged from a plurality of discharge ports to wash the wafer c with running water and overflow excess water from the upper part of the tank a.
【0003】[0003]
【発明が解決しようとする課題】前記従来構造のもので
は、供給管bの吐出口から吐き出される純水はウエハc
の方向へ流れた後に上部に向かうものの、槽aの上部付
近では専ら側壁に沿った流れとなり、過剰水が側壁上端
から溢れ出る。したがって、槽aの水面中央部では流れ
の影響を受け難くここに淀みが生じ、この淀みに浮いた
不純物が集まり、何時までも抜け出せない状態になる。
ところが、ウエハcの槽aへの出し入れはそのような淀
みのある部分を通って行われる。淀みに集まった不純物
はウエハcの取り出しの際に付着し、特に槽内から洗浄
されたウエハcを取り出すときに再付着してウエハを汚
染するという虞があった。In the conventional structure, the pure water discharged from the discharge port of the supply pipe b is the wafer c.
Although it flows to the upper part after flowing in the direction of, the flow mainly follows the side wall near the upper part of the tank a, and excess water overflows from the upper end of the side wall. Therefore, in the central part of the water surface of the tank a, the stagnation is hardly generated due to the influence of the flow, and the impurities floating in the stagnation are gathered, so that the stagnation cannot be escaped forever.
However, the loading / unloading of the wafer c into / from the bath a is performed through such a stagnation portion. The impurities gathered in the stagnation may be attached when the wafer c is taken out, and may be attached again when the cleaned wafer c is taken out from the bath, thus contaminating the wafer.
【0004】また、供給される純水は槽aの下部から上
方へ向かうが、このような流れは槽内部の水質を必ずし
も均質にするものではなく、特に槽aの底付近の角部に
滞留域eが発生し、槽内の純水そのものの水質も悪くな
り、ウエハの汚染物に対する置換特性が損なわれ、洗浄
に時間がかかるだけでなく、設計通りの洗浄品質を維持
できない。純水の置換特性ないしは洗浄能力を良好に保
持するためには、吐出口の配置や形状などを工夫して槽
内をくまなく攪拌する流れを作ることも考えられる。と
ころが、そのようなやり方では空気が純水に溶け込んで
純水中の溶存酸素濃度が高くなり、自然酸化膜の発生な
どが問題となる。加えて、槽内をくまなく攪拌する流れ
を作ることそのものが難しく、槽内に滞留部分ができた
り、下部に溜った不純物の巻き上げ等、効果的ではな
い。Further, the pure water supplied flows upward from the lower part of the tank a, but such a flow does not necessarily make the water quality in the tank uniform, and especially stays at the corner near the bottom of the tank a. The area e is generated, the water quality of the pure water in the tank itself is deteriorated, the replacement characteristic of the wafer for contaminants is impaired, and not only cleaning takes a long time, but also the cleaning quality as designed cannot be maintained. In order to maintain good displacement characteristics or cleaning ability of pure water, it may be possible to devise the arrangement and shape of the discharge port to create a flow that stirs the inside of the tank thoroughly. However, in such a method, air is dissolved in pure water to increase the concentration of dissolved oxygen in pure water, which causes a problem such as formation of a natural oxide film. In addition, it is difficult to create a flow that stirs the inside of the tank thoroughly, and it is not effective to form a stagnant portion in the tank or to wind up impurities accumulated at the bottom.
【0005】本発明は、以上のような従来技術の問題点
を解決し、淀みや滞留流域の発生をなくして純水の置換
特性ないしは洗浄能力を効率的に維持可能にし、洗浄品
質を向上できる半導体ウエハ用洗浄リンス槽を提供する
ことにある。The present invention solves the problems of the prior art as described above, makes it possible to efficiently maintain the replacement characteristic of pure water or the cleaning ability by eliminating the occurrence of stagnation and stagnant flow regions, and improve the cleaning quality. An object is to provide a cleaning rinse tank for semiconductor wafers.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明は純水で半導体ウエハを洗浄リンスする工程
で使用する半導体ウエハ用洗浄リンス槽において、前記
槽上部の一側に設けられて純水を水平方向に吐き出す純
水供給部と、前記槽上部の他側に設けられて前記純水供
給部から供給された純水の一部を表面水流としてオーバ
ーフローにより排水する溢流枠部と、前記槽内部の純水
を下部方向へ導いて排水する排水口と、該排水口より排
水する排水量を制御する排水量制御部とを備えたことを
要旨としている。In order to achieve the above object, the present invention provides a process of cleaning and rinsing a semiconductor wafer with pure water.
In the cleaning rinse tank for semiconductor wafers used in
It is installed on one side of the upper part of the tank, and it discharges pure water horizontally.
It is provided on the other side of the water supply part and the upper part of the tank to supply the pure water.
A part of the pure water supplied from the supply part is used as the surface water flow.
-Overflow frame part drained by flow and pure water inside the tank
The drainage port that guides the
The gist of the present invention is to have a drainage amount control unit for controlling the amount of drainage drained .
【0007】[0007]
【作用】以上構成によれば、前記純水供給部は、一方向
のオーバーフロー表面水流を槽水面に形成し、この表面
水流により従来のような槽水面に発生し易い淀みを押し
流し、淀み自体の発生を構造的に防ぐ。加えて、前記槽
下部の排水口による排水の過程で槽内の純水を下方に導
いて排水し、この下方へ向かう排水流により従来の槽内
部における滞留域の発生を構造的に防止する。According to the above construction, the deionized water supply unit forms an overflow surface water flow in one direction on the tank water surface, and this surface water flow pushes away the stagnation that tends to occur on the tank water surface as in the conventional case, and Structurally prevent the occurrence. In addition, the deionized water in the tank is guided downward in the course of drainage by the drainage port at the lower portion of the tank to drain the pure water, and the downward flow of the drainage structurally prevents the generation of a retention area inside the tank.
【0008】[0008]
【実施例】図1、図2は本発明の第1実施例を示してい
る。同図の半導体ウエハ用洗浄リンス槽1は、槽2の上
部に一体に設けられた溢流枠部3と、槽1の一側上部に
設けられて純水を水平方向に吐き出す純水供給部4と、
槽内下部側に設置されたパンチング板5と、槽底部に設
けられた排水口6とを備えている。1 and 2 show a first embodiment of the present invention. The semiconductor wafer cleaning rinsing tank 1 shown in FIG. 1 is provided with an overflow frame portion 3 which is integrally provided on the upper portion of the tank 2 and a pure water supply portion which is provided on one side of the tank 1 and horizontally discharges pure water. 4 and
The tank is provided with a punching plate 5 installed on the lower side of the tank and a drainage port 6 provided on the bottom of the tank.
【0009】溢流枠部3は、両側壁3a間に位置する中
間部が斜め上側に傾けた傾斜壁2bに形成され、この傾
斜壁2bの先端を通じて槽内の過剰水をオーバーフロー
する。 純水供給部4は、槽1の一側上部に沿って吐出
管7を設置すると共に、吐出管7の中間部に導入管8を
T字形になるよう接続したものである。吐出管7は、傾
斜壁2bと対抗する側に設けられた図示しない複数の吐
出口を有し、これら吐出口が傾斜壁2bの先端と略水平
となる高さで設置されている。導入管8は純水供給設備
に接続される。この純水供給量は供給水量制御部10の
ニードルバルブ9によりその圧送水量を適宜に調整可能
であり、貯蔵槽である純水槽11の純水を吐出管7の吐
出口から所定の流量で吐き出す。The overflow frame portion 3 is formed by an inclined wall 2b having an intermediate portion located between both side walls 3a and inclined obliquely upward, and overflows excess water in the tank through the tip of the inclined wall 2b. The pure water supply unit 4 has a discharge pipe 7 installed along the upper side of one side of the tank 1, and an introduction pipe 8 connected to an intermediate portion of the discharge pipe 7 in a T-shape. The discharge pipe 7 has a plurality of discharge ports (not shown) provided on the side facing the inclined wall 2b, and these discharge ports are installed at a height substantially horizontal to the tip of the inclined wall 2b. The introduction pipe 8 is connected to a pure water supply facility. The pure water supply amount can be appropriately adjusted by the needle valve 9 of the supply water amount control unit 10, and the pure water of the pure water tank 11 which is a storage tank is discharged from the discharge port of the discharge pipe 7 at a predetermined flow rate. .
【0010】また、パンチング板5は、上下方向に貫通
した複数の細孔5aを有し、槽底部付近にあって側壁に
水平保持されている。パンチング板5の下方に位置する
槽底部には排水口6が設けられている。この排水口6か
ら延びる排水管部13の端部は、排水量制御部14によ
り吸引水量の調整が行える水流ポンプないしはニードル
バルブ15に接続される。The punching plate 5 has a plurality of pores 5a penetrating in the vertical direction and is horizontally held near the bottom of the tank on the side wall. A drain port 6 is provided at the bottom of the tank located below the punching plate 5. An end portion of the drain pipe portion 13 extending from the drain port 6 is connected to a water flow pump or a needle valve 15 capable of adjusting a suction water amount by a drainage amount control unit 14.
【0011】次に、以上の洗浄リンス槽についてその作
用効果と共に更に詳述する。ウエハcの洗浄に際して
は、ニードルバルブ9を調節して純水を溢流枠部3から
オーバーフローするまで圧送する。供給水量制御部10
と排水量制御部14を調整操作して、供給される純水が
その一部をオーバーフローし、一部を槽内の純水と共に
パンチング板5の細孔5aを通って排水口6から排水さ
れるようにする。すなわち、この実施例では、吐出管7
の吐出口から供給される水量と排水口6から排出される
水量が供給水量制御部10と排水量制御部14により調
整可能であることから、槽内に矢印しで示した2方向の
水流を形成し、この状態でウエハcの洗浄を行う。Next, the above-mentioned cleaning and rinsing tank will be described in more detail together with its function and effect. When cleaning the wafer c, the needle valve 9 is adjusted to pump pure water from the overflow frame 3 until it overflows. Supply water amount control unit 10
The supplied pure water overflows a part thereof and is partly discharged together with the pure water in the tank through the pores 5a of the punching plate 5 and drained from the drainage port 6 To do so. That is, in this embodiment, the discharge pipe 7
Since the amount of water supplied from the discharge port and the amount of water discharged from the drainage port 6 can be adjusted by the supply water amount control unit 10 and the drainage amount control unit 14, a water flow in two directions indicated by arrows is formed in the tank. Then, the wafer c is cleaned in this state.
【0012】吐出管7から傾斜壁2bに向かう水流は、
槽水面に一方向のオーバーフロー表面水流を形成し、従
来のような槽水面に発生し易い淀みを押し流す。この場
合、傾斜壁2bは緩やかな勾配となっているので、槽内
に渦流などを発生することなく、水面に一様な流れを作
る。加えて、このような表面水流は洗浄リンス槽の蓋の
作用をなし、洗浄リンス槽における表面水流の下部水域
に、外部から塵挨などの不純物が混入したり、空気の溶
け込みおよび空気の溶け込みに起因するウエハcに対す
る自然酸化膜の発生も防止する。排水口6に向かう水流
は、パンチング板5の水流に対する抵抗のため、パンチ
ング板5の細孔5aを通る水量は各部で偏りなく一様と
なり、槽内に下方へ向かう均一な流れを作る。したがっ
て、従来のような槽内に滞留部の発生がなくなり、槽内
に溜った不純物もパンチング板5と排水口6を介して速
やかに排出されるので、槽内の純水はその置換特性ない
しは洗浄能力を効率的に維持する。なお、実施例では槽
2,溢流枠部3,パンチング板5が石英製であり、各部
を一体に形成した例を示したが、各部の材質および成形
についてはこれに限られず、同様な精度が得られるもの
であればよい。The water flow from the discharge pipe 7 to the inclined wall 2b is
A one-way overflow surface water flow is formed on the water surface of the tank to push away the stagnation that tends to occur on the water surface of the tank as in the past. In this case, since the inclined wall 2b has a gentle slope, a uniform flow is created on the water surface without generating a vortex in the tank. In addition, such a surface water flow acts as a lid of the cleaning rinse tank, and impurities such as dust are mixed from the outside into the lower water area of the surface water flow in the cleaning rinse tank, and it is possible for the air and the air to melt. The generation of a natural oxide film on the wafer c due to this is also prevented. Since the water flow toward the drainage port 6 is resistant to the water flow of the punching plate 5, the amount of water passing through the pores 5a of the punching plate 5 becomes uniform in each part and creates a uniform downward flow in the tank. Therefore, there is no generation of a stagnant portion in the tank as in the conventional case, and the impurities accumulated in the tank are also quickly discharged through the punching plate 5 and the drainage port 6, so that the pure water in the tank has its replacement characteristic or Efficiently maintain cleaning ability. In addition, although the tank 2, the overflow frame portion 3, and the punching plate 5 are made of quartz and the respective parts are integrally formed in the embodiment, the material and the molding of the respective parts are not limited to this, and similar accuracy is obtained. As long as the above can be obtained.
【0013】図3は本発明の第2実施例を示しており、
前記洗浄リンス槽と技術的に同じ部分には同一符合を使
用してその説明を省略し、相違する技術構成を詳述す
る。同図の洗浄リンス槽1では、槽内に第2の純水供給
部21,22,23,24を付設している点で前記実施
例の流水洗浄方式と異なっている。これら純水供給部は
槽内壁に配管された円筒管であり、各円筒管に複数の細
孔を槽中心部に向けて開口し、各細孔から純水をウエハ
cに向けてシャワー状に吐き出すようにしたものであ
る。また、溢流枠部30は、傾斜壁12bを前記実施例
と同様に成形し、かつこの傾斜壁12bの基部側に傾斜
壁12bと逆方向斜め上側に立ち上がった逆流防止板2
0を有している。FIG. 3 shows a second embodiment of the present invention.
The same reference numerals are used for technically the same parts as those of the cleaning rinse tank, and the description thereof is omitted, and different technical configurations are described in detail. The cleaning rinse tank 1 of the same drawing is different from the running water cleaning method of the above-described embodiment in that the second pure water supply units 21, 22, 23, 24 are additionally provided in the tank. These pure water supply parts are cylindrical pipes that are piped on the inner wall of the tank. A plurality of pores are opened in each cylindrical tube toward the center of the tank, and pure water is showered from each pore toward the wafer c. It was designed to be exhaled. In the overflow frame portion 30, the inclined wall 12b is formed in the same manner as in the above-described embodiment, and the backflow prevention plate 2 is formed on the base side of the inclined wall 12b and rises in the diagonally upper direction opposite to the inclined wall 12b.
Has 0.
【0014】以上の洗浄リンス槽1では、第1実施例の
作用効果に次のような点が付加される。先ず、純水供給
部21,22,23,24から純水がウエハcに向けて
シャワー状に吐き出されるので、槽内に攪拌流が発生し
ウエハcの流水洗浄はより早くかつ効率よく行え、しか
もパンチング板5および排水口6により槽内に滞留部が
全く発生しない状態で均一に排水される。純水供給部2
1,22,23,24から吐き出される純水水量と、排
水口6から排水する水量、および純水供給部4から吐き
出される純水水量とを調整することにより、純水供給部
4からの純水は淀みを押し流すオーバーフロー水流とし
て専ら用いることも可能で、このようなオーバーフロー
水流が洗浄リンス槽の蓋の作用をなすことも前述の通り
である。加えて、前記逆流防止板20は、傾斜壁12b
に対して多少低くなっており、純水供給部4から吐き出
される純水により一側から他側へ押し流されるオーバー
フロー液の逆流を確実に阻止して、信頼性を向上する。
このように、本発明の洗浄リンス槽は、特許請求の範囲
内で種々変形ないしは展開できるものである。In the cleaning rinse tank 1 described above, the following points are added to the operational effects of the first embodiment. First, since pure water is discharged from the pure water supply units 21, 22, 23, and 24 toward the wafer c in a shower shape, a stirring flow is generated in the tank, and the wafer c can be washed more quickly and efficiently. Moreover, the punching plate 5 and the drainage port 6 allow the water to be uniformly drained in a state where no stagnant portion is generated in the tank. Pure water supply unit 2
By adjusting the amount of pure water discharged from 1, 22, 23, 24, the amount of water discharged from the drain port 6, and the amount of pure water discharged from the pure water supply unit 4, the pure water supplied from the pure water supply unit 4 is adjusted. It is also possible to use the water exclusively as an overflow water flow that pushes the stagnation, and such an overflow water flow acts as a lid of the cleaning rinse tank as described above. In addition, the backflow prevention plate 20 includes the inclined wall 12b.
However, the reverse flow of the overflow liquid pushed from one side to the other side by the pure water discharged from the pure water supply unit 4 is reliably prevented, and the reliability is improved.
Thus, the cleaning rinse tank of the present invention can be variously modified or developed within the scope of the claims.
【0015】[0015]
【発明の効果】以上説明したように、本発明の洗浄リン
ス槽にあっては、純水供給部により一方向のオーバーフ
ロー表面水流を槽水面に形成可能なので、従来のような
槽水面における淀みの発生がなくなり、しかも前記表面
水流が槽蓋の役目をすることから外部から塵挨が混入し
たり、空気に接していることに起因する槽内純水の溶存
酸素濃が高くなることも防げる。更に、排水口により下
方へ向かう一様な水流を形成可能なので、槽内における
滞留流域の発生がなくなる。したがって、本発明は、従
来構造の問題点を比較的簡易な構造により一掃し、淀み
や滞留流域の発生をなくして純水の置換特性ないしは洗
浄能力を効率的に維持でき、純水洗浄の品質と信頼性を
向上できる。As described above, in the cleaning rinse tank of the present invention, since the unidirectional overflow surface water flow can be formed on the tank water surface by the deionized water supply unit, the stagnation on the tank water surface as in the conventional case can be prevented. Further, since the surface water flow serves as a tank lid, it is possible to prevent dust from being mixed in from the outside and increase in the dissolved oxygen concentration of the pure water in the tank due to contact with air. Further, since a uniform water flow downward can be formed by the drainage port, a retention flow area is not generated in the tank. Therefore, according to the present invention, the problems of the conventional structure can be eliminated by a relatively simple structure, the generation of stagnation and retention basin can be eliminated, and the displacement characteristics or cleaning capacity of pure water can be efficiently maintained, and the quality of pure water cleaning can be improved. And reliability can be improved.
【図1】本発明の第1実施例として示す半導体ウエハ用
洗浄リンス槽の側断面図である。FIG. 1 is a side sectional view of a semiconductor wafer cleaning rinse tank shown as a first embodiment of the present invention.
【図2】前記洗浄リンス槽を上から見た平面図である。FIG. 2 is a plan view of the cleaning rinse tank as viewed from above.
【図3】本発明の第2実施例として示す半導体ウエハ用
洗浄リンス槽の側断面図である。FIG. 3 is a side sectional view of a semiconductor wafer cleaning rinse tank shown as a second embodiment of the present invention.
【図4】従来例として示す半導体ウエハ用洗浄リンス槽
の側断面部である。FIG. 4 is a side sectional view of a semiconductor wafer cleaning rinse tank shown as a conventional example.
【図5】他の従来例として示す半導体ウエハ用洗浄リン
ス槽の側断面部である。FIG. 5 is a side cross-sectional view of a semiconductor wafer cleaning rinse tank shown as another conventional example.
1 リンス洗浄槽 2 槽 3,30 溢流枠部 4 純水供給部 5 パンチング板 6 排水口 7 吐出管 13 排水管部 c ウエハ 1 Rinse cleaning tank 2 Tank 3,30 Overflow frame part 4 Pure water supply part 5 Punching plate 6 Drain port 7 Discharge pipe 13 Drain pipe part c Wafer
Claims (1)
程で使用する半導体ウエハ用洗浄リンス槽において、前
記槽上部の一側に設けられて純水を水平方向に吐き出す
純水供給部と、前記槽上部の他側に設けられて前記鈍水
供給部から供給された純水の一部を表面水流としてオー
バーフローにより排水する溢流枠部と、前記槽内部の純
水を下部方向へ導いて排水する排水口と、該排水口より
排水する排水量を制御する排水量制御部とを備えたこと
を特徴とする半導体ウエハ用洗浄リンス槽。1. A cleaning rinsing tank for a semiconductor wafer to be used in the step of cleaning rinsing the semiconductor wafer with pure water, and pure water supply unit for discharging the pure water provided on one side of the tank top in the horizontal direction, the The blunt water provided on the other side of the tank
A part of the pure water supplied from the supply unit is used as a surface water stream.
And overflow frame portion for draining the bars flow, a water outlet for draining leading the pure water inside the tank to the lower direction, from the exhaust Minakuchi
A cleaning rinsing tank for semiconductor wafers, comprising: a drainage control unit for controlling the amount of drainage .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3350731A JPH0736399B2 (en) | 1991-12-12 | 1991-12-12 | Cleaning rinse tank for semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3350731A JPH0736399B2 (en) | 1991-12-12 | 1991-12-12 | Cleaning rinse tank for semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05166787A JPH05166787A (en) | 1993-07-02 |
JPH0736399B2 true JPH0736399B2 (en) | 1995-04-19 |
Family
ID=18412473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3350731A Expired - Lifetime JPH0736399B2 (en) | 1991-12-12 | 1991-12-12 | Cleaning rinse tank for semiconductor wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0736399B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07100443A (en) * | 1993-10-04 | 1995-04-18 | Sankyo Eng Kk | Method and device for cleaning work |
JPH07115080A (en) * | 1993-10-19 | 1995-05-02 | Dan Kagaku:Kk | Cleaning tank |
KR100510762B1 (en) * | 2001-02-01 | 2005-08-30 | 에이펫(주) | Wafer dryer |
KR100440891B1 (en) * | 2001-02-01 | 2004-07-19 | 에이펫(주) | Method of drying a wafer |
KR20030061136A (en) * | 2002-01-10 | 2003-07-18 | 삼성전자주식회사 | Wafer cleaning dryer for semiconductor processing |
JP2009141022A (en) * | 2007-12-04 | 2009-06-25 | Tokyo Electron Ltd | Substrate processing apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01210091A (en) * | 1988-02-18 | 1989-08-23 | Sonitsuku Fueroo Kk | Treatment of precision apparatus with liquid |
JPH02152232A (en) * | 1988-12-05 | 1990-06-12 | Toshiba Corp | Cleaning |
-
1991
- 1991-12-12 JP JP3350731A patent/JPH0736399B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05166787A (en) | 1993-07-02 |
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