JP2000093906A - Apparatus for producing semiconductor - Google Patents
Apparatus for producing semiconductorInfo
- Publication number
- JP2000093906A JP2000093906A JP10272111A JP27211198A JP2000093906A JP 2000093906 A JP2000093906 A JP 2000093906A JP 10272111 A JP10272111 A JP 10272111A JP 27211198 A JP27211198 A JP 27211198A JP 2000093906 A JP2000093906 A JP 2000093906A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- tank
- cleaning
- opening
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、被洗浄物を液中に
浸漬し、循環、ろ過又はオーバーフローさせながら洗浄
或いはエッチング処理を行う半導体洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor cleaning apparatus for immersing an object to be cleaned in a liquid and performing a cleaning or etching process while circulating, filtering or overflowing.
【０００２】[0002]
【従来の技術】従来、この種の湿式洗浄方法を用いた洗
浄装置の装置構造としては、図３の３０１に示すような
装置底面部の任意の場所からポンプ３０４（ａ）により
循環、フィルター３０５（ｂ）によりろ過液または未使
用の高純度薬液をポンプ３０４（ａ）により供給した
り、図３の３０６よりオーバーフローした薬液を外槽３
０２から回収した薬液をろポンプ３０４（ａ）により循
環、フィルター３０５（ａ）でろ過する方法が用いられ
ていた。2. Description of the Related Art Conventionally, as an apparatus structure of a cleaning apparatus using this type of wet cleaning method, a pump 304 (a) circulates and filters 305 from an arbitrary location on the bottom of the apparatus as shown in FIG. 3 (b), the filtrate or unused high-purity chemical is supplied by the pump 304 (a), and the chemical overflowed from 306 in FIG.
A method has been used in which the chemical solution recovered from the sample No. 02 is circulated by a filter pump 304 (a) and filtered by a filter 305 (a).
【０００３】[0003]
【発明が解決しようとする課題】一般的に、被洗浄物を
液中に全面浸漬するこの種の湿式洗浄においては、洗浄
液中に存在する微粒子の量と洗浄後の被洗浄物の清浄度
には強い相関関係が見られ、洗浄液の清浄度が高いほど
被洗浄物にも高い清浄度が得られる。これは、この洗浄
方法が、洗浄液の物理的、或いは科学的作用によって、
一方では解離、遊離を起こし洗浄されることと、一旦遊
離した微粒子が再び被洗浄物に近接、又は接触すること
により再付着する現象を繰り返して起こしているからで
ある。従って、一旦、被洗浄物より遊離された微粒子
は、槽内から直ちに排出され、再び被洗浄物と近接、又
は接触する機会を奪ってしまうことが必要であった。ま
た、エッチングに於いては、その重要な制御因子である
温度を槽内各部位に於いて均一にすることと、エッチン
グ後の化学反応物を効果的に薄め、次から次へとフレッ
シュな薬液を供給することが必要であった。Generally, in this type of wet cleaning in which an object to be cleaned is entirely immersed in a liquid, the amount of fine particles present in the cleaning liquid and the cleanliness of the object to be cleaned after the cleaning are reduced. Has a strong correlation, and the higher the cleanliness of the cleaning liquid, the higher the cleanliness of the object to be cleaned. This is because this cleaning method is based on the physical or scientific action of the cleaning solution.
On the one hand, it is caused by dissociation and release and washing, and the phenomenon that the once released fine particles are reattached by approaching or contacting the object to be washed again and again. Therefore, it is necessary that the fine particles once released from the object to be cleaned are immediately discharged from the tank, and take the opportunity to approach or come into contact with the object to be cleaned again. Also, in etching, the temperature, which is an important control factor, is made uniform in each part of the chamber, and the chemical reactants after etching are effectively diluted, so that fresh chemical solution can be used one after another. It was necessary to supply
【０００４】しかしながら図３に示す従来の半導体製造
装置では、液の対流の方向がオーバーフロー面に対して
のみ向かうのではなく、液と大気の接触面又は槽壁に衝
突した液流の反射により複雑に干渉しあうことにより、
液の滞留又は、極めて流動が遅い場所と、極めて活発に
流動する場所が槽内に共存してしまう不都合があった。However, in the conventional semiconductor manufacturing apparatus shown in FIG. 3, the direction of convection of the liquid is not only directed to the overflow surface, but is complicated by the reflection of the liquid flow colliding with the contact surface between the liquid and the atmosphere or the tank wall. By interfering with
There is a disadvantage that a place where the liquid stays or the flow is extremely slow and a place where the flow is extremely active coexist in the tank.
【０００５】すなわち、槽内にエッチング処理や洗浄処
理によって発生した汚染物やパーティクルが、滞留又は
供給されたフレッシュな薬液との置換が遅れてしてしま
うポイントが発生してしまった。これにより、ろ過、循
環の場合には図３の３０５（ａ）に示す様な循環系に設
けられたフィルターの効果が十分に活かされず、槽内の
液を短時間でフレッシュな薬液に置換するために長時間
を費やさなければならなかった。[0005] That is, there is a point at which contaminants and particles generated by etching and cleaning processes in the tank are delayed in the retention or replacement with the supplied fresh chemical solution. As a result, in the case of filtration and circulation, the effect of the filter provided in the circulation system as shown in 305 (a) of FIG. 3 is not sufficiently utilized, and the liquid in the tank is replaced with a fresh chemical in a short time. Had to spend a long time in order to.
【０００６】また、フィルター３０５（ａ）より供給さ
れるフレッシュな薬液に置換させるインターバルをとっ
て洗浄又はエッチングを行うことは、非常に効率が悪
く、短時間処理で効率よい洗浄を行うのには不都合であ
った。更に、オーバーフロー部３０６のみからの薬液回
収、或いは排出を行っているため、槽内で使用される薬
液と化学的反応性がなく、混合物として存在する洗浄薬
液より比重の高い薬液、たとえばＩＰＡに対しての水な
どや、殆どの金属類或いは、エッチング作用によって生
成された反応生成物の殆どは槽下部に沈殿することや、
前記、対流の影響により同じく槽底部に不要物が滞留す
る現象が発生する。[0006] In addition, it is very inefficient to perform cleaning or etching at intervals of replacing the liquid with a fresh chemical supplied from the filter 305 (a). It was inconvenient. Further, since the chemical solution is collected or discharged only from the overflow section 306, it has no chemical reactivity with the chemical solution used in the tank, and has a higher specific gravity than the cleaning chemical solution existing as a mixture, such as IPA. Most of the water and other metals, or most of the reaction products generated by the etching action, settle at the bottom of the tank,
The phenomenon in which the unnecessary material stays at the bottom of the tank also occurs due to the influence of the convection.
【０００７】一方、洗浄液として使用されている薬液よ
り比重の低い物質は、槽上部で浮遊しながら、やがてオ
ーバーフロー時３０６の液の流動によって外槽３０２に
回収されていった。これにより、特に槽底部に沈んだ重
いパーティクルや不純物は、前記の槽内対流が不均一で
あることとあいまって、殆ど、フレッシュな薬液との置
換が進まず、槽内に停滞することが多かった。これら二
つの現象ににより、槽内のパーティクルや不純物は、新
液を供給し続けることや、循環、ろ過を行っているにも
関わらず、短時間で循環、ろ過、を行うことが不可能で
あった。本発明の目的はこれら不具合を改善し、短時間
で効率よく、槽内の薬液を循環、ろ過、或いは置換し、
洗浄液またはエッチング液の純度、清浄度を槽内の各部
位において均一にすること、また、短時間に清浄度を高
めること、更には、槽内温度のバラツキを小さくできる
ことにより、被洗浄物に対して高い洗浄効果を得るこ
と、エッチング量の部位によるバラツキを極めて小さく
することを実現することにある。On the other hand, a substance having a lower specific gravity than the chemical used as the cleaning liquid floats on the upper part of the tank, and is eventually recovered in the outer tank 302 by the flow of the liquid at the time of overflow 306. Thereby, in particular, heavy particles and impurities settled at the bottom of the tank, in combination with the non-uniform convection in the tank, almost do not proceed with replacement with a fresh chemical solution, and often stagnate in the tank. Was. Due to these two phenomena, it is impossible for the particles and impurities in the tank to circulate and filter in a short time even though the new liquid is continuously supplied and the circulation and filtration are performed. there were. The object of the present invention is to improve these disadvantages, efficiently in a short time, circulate, filter or replace the chemical in the tank,
By making the purity and cleanliness of the cleaning solution or etching solution uniform in each part of the bath, increasing the cleanliness in a short time, and further reducing the variation in the temperature inside the bath, To achieve a high cleaning effect, and to minimize variations in the amount of etching depending on the site.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の半導体製造装置は、洗浄槽またはエッチ
ング槽内の液の滞留を防止するために、洗浄槽の側壁の
任意の場所に、単一又は複数の場所にろ過、循環又は新
液を供給する突出口を設けることと、突出口の対面を、
突出角度に対して垂直にならない様に任意に傾けること
によって、洗浄槽内の液の対流をオーバーフロー部や、
液吸引、又は回収口に向けて液の流れをつくることを特
徴とする。また、槽の液吸引口は、オーバーフロー部
と、槽底部又は下部の任意の単一又は複数の場所に設置
することを特徴とする。In order to achieve the above object, a semiconductor manufacturing apparatus according to the present invention is provided at an arbitrary position on a side wall of a cleaning tank in order to prevent liquid from remaining in a cleaning tank or an etching tank. In addition, providing a spout for supplying filtration, circulation or new liquid to one or more places, and facing the spout,
By arbitrarily tilting it so as not to be perpendicular to the projection angle, the convection of the liquid in the washing tank overflows,
The method is characterized in that a liquid is sucked or a flow of the liquid is created toward a recovery port. In addition, the liquid suction port of the tank is provided at any one or more locations on the overflow portion and the bottom or lower portion of the tank.
【０００９】[0009]
【作用】以上説明した本発明の半導体製造装置によれ
ば、洗浄槽内の液の対流を変化させることによって、ろ
過、循環、などによって新たにに供給される清浄な薬液
と、洗浄やエッチングによって汚染された、処理槽内の
薬液とを効率よく短時間で置換することや、槽内の微粒
子を効率よく洗浄槽外に排出することが可能となる。According to the semiconductor manufacturing apparatus of the present invention described above, by changing the convection of the liquid in the cleaning tank, a clean chemical liquid newly supplied by filtration, circulation, etc. It is possible to efficiently replace the contaminated chemical solution in the treatment tank in a short time, and to efficiently discharge the fine particles in the tank out of the cleaning tank.
【００１０】また、槽底部又は槽下部に設けられた、液
の排出口と、オーバーフローとの二つの排出口を用いる
ことによって、洗浄液との比重差によって浮いたり、沈
んだりする特徴を有する微粒子を選択的に捕捉すること
が出来る。これにより、洗浄によって被洗浄物より解
離、遊離した微粒子が長時間槽内に停滞することによっ
て起こる、洗浄中の被洗浄物への微粒子再付着の確率を
極めて小さくすることができ、清浄な洗浄表面を得るこ
とが出来る。また、エッチングの場合は、エッチング作
用により溶解した成分を含むエッチング液がエッチング
反応を起こした周辺に長時間滞留することを防ぎ、エッ
チング液の各部位における濃度分布を常に一定に保ち、
かつ、槽内の液温バラツキを極めて小さくできると言う
特徴を有し、エッチングの均一化を図ることが出来る。[0010] Further, by using two discharge ports, a liquid discharge port and an overflow, provided at the bottom or lower part of the tank, fine particles having a characteristic of floating or sinking due to a difference in specific gravity with the cleaning liquid can be obtained. Can be captured selectively. As a result, the probability of fine particles re-adhering to the object to be cleaned during cleaning, which is caused by the particles dissociated and released from the object to be cleaned due to cleaning remaining in the tank for a long time, can be extremely reduced. The surface can be obtained. In addition, in the case of etching, the etching solution containing the component dissolved by the etching action is prevented from staying for a long time in the vicinity where the etching reaction has occurred, and the concentration distribution of each portion of the etching solution is always kept constant,
In addition, it has a feature that the liquid temperature variation in the tank can be made extremely small, and the etching can be made uniform.
【００１１】[0011]
【発明の実施の形態】本発明の半導体製造装置の実施例
一について図面を参照にして説明する。図１は本発明の
半導体製造装置の断面構造を模式的にあらわしたもので
ある。図１において１０１及び１０２、１０３は、ろ
過、循環後の洗浄液を槽内に送り込むための配管、及び
突出口である。ここで１０１は槽下部への液の対流をつ
くる為の突出口であり、１０２はオーバーフロー部への
対流を作るため、１０３は薬液表面の液の流れを排出口
１１４に導く為の突出口である。この突出口１０２か
ら、導かれた洗浄液は槽の対面１１２に向けては巨視的
には直線的に対流するものが殆どである、対面１１２は
槽の上部オーバーフロー部１０４に向けてテーパーがつ
けられているため、衝突した液は、ほぼ１１２の壁面に
沿って流動し、やがてオーバーフロー面に達し排出され
る。突出口１０１から導かれた液は対面１１３に衝突
し、槽底部に向けて逆テーパがつけられた槽壁１１３に
沿って流動し、排出口１０５（ｂ）から排出される。一
方排出口１０５（ａ）からは突出口１０１の下部にでき
る滞留領域の液を積極的に排出する。ここで必要なの
は、排出口１０１、１０２の対面側の壁に設けられたテ
ーパーは必ず、オーバーフロー１０４又は底部排出口１
０５（ｂ）に整流させる様なテーパーを設けることであ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 of a semiconductor manufacturing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 schematically shows a cross-sectional structure of a semiconductor manufacturing apparatus according to the present invention. In FIG. 1, reference numerals 101, 102, and 103 denote a pipe for feeding the cleaning liquid after filtration and circulation into the tank, and a protrusion. Here, 101 is a projecting port for creating a convection of the liquid to the lower part of the tank, 102 is a projecting port for guiding the flow of the solution on the surface of the chemical solution to the discharge port 114 for creating a convection to the overflow section, and 103 is a projecting port. is there. In most cases, the cleaning liquid guided from this projecting port 102 macroscopically linearly convects toward the facing surface 112 of the bath. The facing surface 112 is tapered toward the upper overflow portion 104 of the bath. Therefore, the colliding liquid flows along almost the 112 wall surfaces, and eventually reaches the overflow surface and is discharged. The liquid guided from the projecting port 101 collides with the facing surface 113, flows along the tank wall 113 having an inverse taper toward the tank bottom, and is discharged from the discharge port 105 (b). On the other hand, the liquid in the stagnation area formed below the protrusion 101 is positively discharged from the discharge port 105 (a). What is needed here is that the taper provided on the wall facing the outlets 101, 102 must be the overflow 104 or the bottom outlet 1
05 (b).
【００１２】また、１０５（ａ）は滞留を起こし易い部
位を補うために、また、オーバーフロー１０６は液表面
の流動方向を排出口１０４に向ける位置に設置するとこ
ろにある。以上の様な液中の対流制御によって効率よく
捕捉、置換された汚染の大きい薬液はフィルター１０８
によって微粒子除去を行って再度、突出口に導く方法を
とってもよい。また、バルブ１０９（ｆ）を開きバルブ
１０９を閉めることによって使用済みの薬液全てを排出
し、ポンプ１１０（ｂ）バルブ１０９（ｃ）１０９
（ｇ）を開放して、常に新液を供給する方法をとっても
よい。更に、通常は、開放されているバルブ１０９
（ａ）、１０９（ｂ）、１０９（ｇ）、のそれぞれをバ
ルブの開放度合いを任意に調節することによって突出口
１０１、１０２、１０３のそれぞれの流速を任意に制御
してもよい。さらに、バルブ１０９（ｄ）、１０９
（ｅ）の開放度合いを調整することによって槽全体の対
流速度や槽底部の流速バランスを制御してもよい。次
に、本発明の実施例二を図２を使って説明する。２０１
（ａ）、２０１（ｂ）、２０１（ｃ）、２０１（ｄ），
２０１（ｅ）、２０１（ｆ）、２０１（ｇ）、２０１
（ｈ）、はポンプ２０５によってくみ上げられた、薬
液、または、バルブ２０１（ｉ）を開放しフィルター２
０６（ａ）、又は２０６（ｂ）を介在して洗浄槽内に供
給するための流量調整バルブである。この流量調整バル
ブにより、槽内に供給された洗浄液は、槽内では巨視的
には直線的に移動する。In addition, 105 (a) is provided at a position where the flow direction of the liquid surface is directed to the discharge port 104 in order to supplement a portion which is likely to cause stagnation. The highly contaminated chemical solution efficiently captured and replaced by the convection control in the solution as described above
A method may be adopted in which the fine particles are removed by the method described above and the guide is again led to the projecting opening. Further, by opening the valve 109 (f) and closing the valve 109, all the used chemical liquid is discharged, and the pump 110 (b) the valve 109 (c) 109
(G) may be opened and a method of always supplying a new liquid may be adopted. Further, the normally open valve 109
The flow rates of the outlets 101, 102, and 103 may be arbitrarily controlled by arbitrarily adjusting the degree of opening of each of the valves (a), 109 (b), and 109 (g). Further, the valves 109 (d), 109
By adjusting the degree of opening in (e), the convection velocity of the entire tank or the flow velocity balance at the bottom of the tank may be controlled. Next, a second embodiment of the present invention will be described with reference to FIG. 201
(A), 201 (b), 201 (c), 201 (d),
201 (e), 201 (f), 201 (g), 201
(H), the chemical solution pumped up by the pump 205 or the valve 201 (i) is opened and the filter 2 is opened.
This is a flow control valve for supplying into the cleaning tank via 06 (a) or 206 (b). With this flow control valve, the cleaning liquid supplied into the tank moves linearly macroscopically in the tank.
【００１３】実施例１と同じくして、突出口の対面は槽
開口部に向けて広がりを持つ構造２０７であるため衝突
した洗浄液はオーバーフロー回収部２０３に回収され
る。洗浄液より比重も高い微粒子は、このフローに逆ら
い、槽底に沈殿してしまうため、そうした重い微粒子を
回収することを目的として、吸引口２０２より槽底部の
薬品を回収する流れを形成する。槽内部の対流を任意に
可変させるためには、２０１（ａ）から２０１（ｈ）ま
で及び２０１（ｋ）のバルブ開閉度合いを任意に可変し
た組み合わせを作ればよい。また、槽内の薬液は、バル
ブ２０１（ｊ）を開放して２０１（ｋ）を閉じることに
よって全て廃液することとバルブ２０１（ｉ）を開放し
フィルター２０６（ｂ）を介在し、常に新液を供給する
ことを行ってもよいし、２０１（ｊ）を閉じ、２０１
（Ｉ）を閉じ、ポンプ２０５、フィルター２０６（ａ）
を介在し、循環することを行ってもよい。In the same manner as in the first embodiment, the cleaning liquid that has collided is collected by the overflow recovery section 203 because the projection 207 has a structure 207 that expands toward the tank opening. Fine particles having a specific gravity higher than that of the cleaning liquid are opposed to this flow and settle at the bottom of the tank. Therefore, a flow for collecting the chemical at the bottom of the tank from the suction port 202 is formed for the purpose of collecting such heavy fine particles. In order to arbitrarily change the convection inside the tank, a combination in which the valve opening / closing degrees of 201 (a) to 201 (h) and 201 (k) are arbitrarily changed may be made. The chemical in the tank is drained by opening the valve 201 (j) and closing the valve 201 (k), and the valve 201 (i) is opened and the filter 206 (b) is interposed. May be supplied, or 201 (j) may be closed and 201
Close (I), pump 205, filter 206 (a)
And circulation may be performed.
【００１４】[0014]
【発明の効果】以上説明してきた本発明の半導体製造装
置によれば、被洗浄物を薬液に全浸漬する、湿式洗浄方
法において、洗浄槽の内壁の形状をかえることと液突出
口、排出又は吸引口の位置と数を最適化するだけで洗浄
槽の槽内の液の対流を制御できるため、槽内の液の対流
の仕方に起因する液や微粒子の滞留が起こらず合理的に
短時間に排出又は新液との置換が可能となる。また、槽
内の液の対流に降伏せず、槽底部に集まってしまう、洗
浄液より比重の重い微粒子や、逆に液上部に集まる軽い
微粒子、外気から洗浄槽の表面に舞い下りた微粒子が回
収口に向けて効率よく流動するため、清浄な洗浄液状態
を短時間につくることができる。これにより、洗浄液中
で、一度除去された微粒子が、再び被洗浄物と遭遇また
は接近する機会を極めて低減させ、被洗浄物への微粒子
の再付着を低減させ、従来の方法に比べて飛躍的に高い
洗浄効果を得ることが出来る。また、必要な置換や洗浄
度を得るために要する時間を短縮することが出来ろこと
により、洗浄液の使用量を少なくしたり、短時間で高精
度の洗浄が可能となる。According to the semiconductor manufacturing apparatus of the present invention described above, in a wet cleaning method in which an object to be cleaned is completely immersed in a chemical solution, the shape of the inner wall of the cleaning tank can be changed and the liquid outlet, discharge or discharge can be performed. Since the convection of the liquid in the cleaning tank can be controlled only by optimizing the position and number of the suction ports, the liquid and fine particles due to the manner of convection of the liquid in the cleaning tank do not stagnate, and a reasonably short period of time does not occur. Can be discharged or replaced with a new solution. Also, fine particles with a higher specific gravity than the cleaning liquid, condensed at the top of the liquid, and conversely, collected at the top of the liquid, and particles that flew down to the surface of the cleaning tank from outside air, are collected at the bottom of the tank without yielding to the convection of the liquid in the tank. Since the fluid flows efficiently toward the mouth, a clean washing liquid state can be created in a short time. As a result, the chance of the fine particles once removed in the cleaning liquid again encountering or approaching the object to be cleaned is greatly reduced, and the re-adhesion of the fine particles to the object to be cleaned is reduced. High cleaning effect can be obtained. In addition, since the time required to obtain the necessary replacement and cleaning degree can be reduced, the amount of the cleaning liquid used can be reduced, and high-precision cleaning can be performed in a short time.
【００１５】更に、エッチング用途では、重要な制御因
子である槽内の温度バラツキを最小限に小さくすること
も可能となる。Furthermore, in etching applications, it is possible to minimize the temperature variation in the bath, which is an important control factor.
【図１】本発明の半導体製造装置の実施例１を示す断面
図。FIG. 1 is a sectional view showing a first embodiment of a semiconductor manufacturing apparatus according to the present invention.
【図２】本発明の半導体製造装置の実施例２を示す断面
図。FIG. 2 is a sectional view showing a second embodiment of the semiconductor manufacturing apparatus of the present invention.
【図３】従来の半導体製造装置の実施例を示す断面図。FIG. 3 is a sectional view showing an embodiment of a conventional semiconductor manufacturing apparatus.
１０１、１０２、１０３、１０９（ａ）、１０９
（ｂ）、１０９（ｃ）、１０９（ｅ）、１０９（ｆ）、
１０９（ｇ）２０１（ａ）、２０１（ｂ）、２０１
（ｃ）、２０１（ｄ）、２０１（ｅ）、２０１（ｆ）、
２０１（ｇ）、２０１（ｈ）、２０１（ｉ）、２０１
（ｊ）、２０１（ｋ）、、３０３（ａ），３０３（ｂ）
槽内に薬液または洗浄液を供給または廃液するための、
配管及びバルブ １０６、２０４、３０６薬液または洗浄液の流れをしめ
す印 １０４、２０３、３０２オーバーフロー液回収ライン １０５（ａ）、１０５（ｂ）、２０２薬液または洗浄液
回収口 １０８、２０６（ａ）、２０６（ｂ）、３０５（ｂ）微
粒子除去用フィルター １１０（ａ）、１１０（ｂ）、２０５、３０４（ａ）、
３０４（ｂ）薬液または洗浄液循環、回収用循環ポンプ101, 102, 103, 109 (a), 109
(B), 109 (c), 109 (e), 109 (f),
109 (g) 201 (a), 201 (b), 201
(C), 201 (d), 201 (e), 201 (f),
201 (g), 201 (h), 201 (i), 201
(J), 201 (k), 303 (a), 303 (b)
To supply or waste liquid chemicals or cleaning liquids in the tank,
Piping and valves 106, 204, 306 Marks indicating the flow of the chemical or cleaning liquid 104, 203, 302 Overflow liquid recovery lines 105 (a), 105 (b), 202 Chemical or cleaning liquid recovery ports 108, 206 (a), 206 ( b), 305 (b) Filter for removing fine particles 110 (a), 110 (b), 205, 304 (a),
304 (b) Circulation pump for circulation or recovery of chemical or cleaning liquid
Claims (3)
せながら被洗浄物の表面を洗浄する湿式洗浄或いは、湿
式エッチング装置に於いて、前記洗浄槽の槽側壁の任意
の単一又は複数の場所に突出口を設けることを特徴とし
た半導体製造装置。In a wet cleaning or wet etching apparatus for cleaning the surface of an object to be cleaned while immersing the object to be cleaned in a liquid and causing it to overflow, one or more arbitrary one or more of the side walls of the cleaning tank are provided. A semiconductor manufacturing apparatus characterized in that a protrusion is provided at a location.
り付面の対面側の側壁を液の突出角度に対して垂直にな
らない様に、任意に傾けることを特徴とした半導体製造
装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the side wall of the surface facing the mounting surface of the projection is arbitrarily inclined so as not to be perpendicular to the projection angle of the liquid.
給された洗浄液を、オーバーフローで回収することと、
槽底の単一又は複数の任意の場所に廃液又は循環を行う
為の吸引口を設けることを特徴とした半導体製造装置。3. In the semiconductor manufacturing apparatus, recovering the cleaning liquid supplied into the tank by overflowing;
A semiconductor manufacturing apparatus characterized in that a suction port for performing waste liquid or circulation is provided at one or a plurality of arbitrary locations on a tank bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10272111A JP2000093906A (en) | 1998-09-25 | 1998-09-25 | Apparatus for producing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10272111A JP2000093906A (en) | 1998-09-25 | 1998-09-25 | Apparatus for producing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000093906A true JP2000093906A (en) | 2000-04-04 |
Family
ID=17509245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10272111A Withdrawn JP2000093906A (en) | 1998-09-25 | 1998-09-25 | Apparatus for producing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000093906A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424913B1 (en) * | 2001-03-30 | 2004-03-27 | (주)케이.씨.텍 | Apparatus for washing substrates |
| JP2014210219A (en) * | 2013-04-17 | 2014-11-13 | 三菱マテリアルテクノ株式会社 | Cleaning device and cleaning method |
-
1998
- 1998-09-25 JP JP10272111A patent/JP2000093906A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424913B1 (en) * | 2001-03-30 | 2004-03-27 | (주)케이.씨.텍 | Apparatus for washing substrates |
| JP2014210219A (en) * | 2013-04-17 | 2014-11-13 | 三菱マテリアルテクノ株式会社 | Cleaning device and cleaning method |
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