JPH07326655A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH07326655A JPH07326655A JP11841794A JP11841794A JPH07326655A JP H07326655 A JPH07326655 A JP H07326655A JP 11841794 A JP11841794 A JP 11841794A JP 11841794 A JP11841794 A JP 11841794A JP H07326655 A JPH07326655 A JP H07326655A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- electrostatic chuck
- insulating layer
- conductive layer
- conducting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置等にお
いてシリコンウエハーを静電的に吸着保持して処理した
り、搬送するために用いられる静電チャックで、高温ま
で広い温度範囲で安定して使用可能な耐久性に優れた静
電チャックに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck used for electrostatically adsorbing and holding a silicon wafer in a semiconductor manufacturing apparatus or the like for processing or carrying, which is stable in a wide temperature range up to a high temperature. The present invention relates to an electrostatic chuck having excellent durability that can be used as a product.
【０００２】[0002]
【従来の技術】半導体製造用装置において、シリコンウ
エハーにパターンニング等の各種微細加工をするために
は、該ウエハーの平坦度を保ちながら固定する治具が必
要であり、該治具として従来から機械式や真空吸着式、
静電吸着式等の各種チャックが提案されている。2. Description of the Related Art In semiconductor manufacturing equipment, in order to perform various kinds of fine processing such as patterning on a silicon wafer, a jig for fixing the wafer while maintaining its flatness is required. Mechanical type or vacuum adsorption type,
Various chucks such as an electrostatic chuck type have been proposed.
【０００３】これらのチャックの中で、静電的に前記シ
リコンウエハーを吸着固定する静電チャックは、該ウエ
ハーの各種微細加工を行う際に要求される加工面の平坦
度や平行度を容易に実現することができ、更に該ウエハ
ーを真空中でも使用することができるため、半導体の製
造に際して最も多用されているものである。Among these chucks, the electrostatic chuck for electrostatically attracting and fixing the silicon wafer facilitates the flatness and parallelism of the processed surface required when performing various fine processing of the wafer. Since it can be realized and the wafer can be used even in a vacuum, it is most frequently used in the production of semiconductors.
【０００４】このような従来の静電チャックには、一般
的に電極板の表面にアルミナやサファイヤ等から成る絶
縁層を形成したものがあり、他に絶縁性基体上に導電層
を形成し、その上に絶縁層を形成したものや、絶縁性基
体内部に導電層を組み込んだもの等が提案されていた。In such a conventional electrostatic chuck, there is generally one in which an insulating layer made of alumina, sapphire or the like is formed on the surface of an electrode plate, and in addition, a conductive layer is formed on an insulating substrate, Those in which an insulating layer is formed thereon, those in which a conductive layer is incorporated inside an insulating substrate, and the like have been proposed.
【０００５】近年、半導体素子の集積回路の集積度が向
上するに従い、静電チャックに要求される精度がより高
度化してきていることから、更に耐食性や耐摩耗性、耐
熱衝撃性に優れたセラミックス製静電チャックが使用さ
れるようになってきた。In recent years, as the degree of integration of integrated circuits of semiconductor devices has improved, the precision required for electrostatic chucks has become more sophisticated, and therefore ceramics that are more excellent in corrosion resistance, wear resistance, and thermal shock resistance. Made electrostatic chucks have come into use.
【０００６】しかしながら、通常、炭化珪素や窒化珪
素、窒化アルミニウム等のセラミックスを焼結するに
は、主成分の原料に焼結助剤を加える必要があり、前記
セラミックス製品には焼結助剤が必然的に存在すること
となる。However, in order to sinter ceramics such as silicon carbide, silicon nitride, aluminum nitride, etc., it is usually necessary to add a sintering aid to the raw material of the main component, and the ceramic product contains the sintering aid. It will inevitably exist.
【０００７】一方、半導体製造用装置の部品は、シリコ
ンウエハーに不純物が混入しないように高純度の物質で
作成する必要がある。On the other hand, the components of the semiconductor manufacturing apparatus must be made of a high-purity substance so that impurities are not mixed into the silicon wafer.
【０００８】そのために、前記セラミックス製品を静電
チャックとして用いた場合には、静電チャックの載置面
をはじめ、含有する焼結助剤が不純物としてシリコンウ
エハーの表面を汚染する可能性がある。Therefore, when the ceramic product is used as an electrostatic chuck, the sintering aid contained in the mounting surface of the electrostatic chuck may contaminate the surface of the silicon wafer as an impurity. .
【０００９】そこで、不純物によるシリコンウエハーの
汚染を防止するために、密着性の良好な高純度絶縁層で
被覆した静電チャック板が特開平４−３４９５３号公報
等に提案されている。Therefore, in order to prevent contamination of a silicon wafer by impurities, an electrostatic chuck plate coated with a high-purity insulating layer having good adhesion has been proposed in Japanese Patent Laid-Open No. 4-34953.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、前記静
電チャック板では、基体と高純度絶縁層との密着性は良
好なものの、タングステン（Ｗ）等から導電層が、基体
と高純度絶縁層の両者に対して密着性が不充分で剥離す
る恐れがあり、耐久性に不安があるという課題があっ
た。However, in the electrostatic chuck plate described above, although the adhesion between the base and the high-purity insulating layer is good, the conductive layer made of tungsten (W) or the like forms the base and the high-purity insulating layer. There is a problem in that the adhesiveness to both is insufficient and there is a risk of peeling, and there is concern about durability.
【００１１】[0011]
【発明の目的】本発明は前記課題に鑑みなされたもの
で、その目的は、半導体の製造工程で稼働中に静電チャ
ックを構成する導電層が剥離したりせず、不純物等の汚
染の恐れもなく、高温でも長期に渡り優れた信頼性と安
定性を示す製造コストの低い静電チャックを提供するこ
とにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to prevent the conductive layer constituting the electrostatic chuck from peeling off during operation in the semiconductor manufacturing process, which may result in contamination by impurities or the like. In other words, the object is to provide an electrostatic chuck that exhibits excellent reliability and stability even at high temperatures for a long period of time and has a low manufacturing cost.
【００１２】[0012]
【課題を解決するための手段】本発明の静電チャック
は、窒化アルミニウム質焼結体から成る基体の表面にメ
タライズ法によりモリブデン（Ｍｏ）とマンガン（Ｍ
ｎ）を主成分とする導電層を被着形成し、少なくとも該
導電層上に、耐熱衝撃性、耐フッ素プラズマ性に優れた
窒化アルミニウムを主体とする膜を気相合成法で被覆
し、該被覆層の酸素含有量が２０原子％以下で、厚さが
０．００１〜１．０ｍｍの絶縁層を構成したもの、ある
いは前記同様の構成で、基体中に発熱回路を内蔵したも
のであることを特徴とするものである。In the electrostatic chuck of the present invention, molybdenum (Mo) and manganese (M) are formed on the surface of a substrate made of an aluminum nitride sintered body by a metallizing method.
a conductive layer containing n) as a main component is deposited, and at least the conductive layer is coated with a film mainly composed of aluminum nitride excellent in thermal shock resistance and fluorine plasma resistance by a vapor phase synthesis method, The coating layer has an oxygen content of 20 atomic% or less and has an insulating layer thickness of 0.001 to 1.0 mm, or has the same configuration as the above and has a heating circuit built in the substrate. It is characterized by.
【００１３】[0013]
【作用】本発明の静電チャックによれば、導電層として
モリブデン（Ｍｏ）とマンガン（Ｍｎ）を主成分とする
合金を被着形成したことから、窒化アルミニウム質焼結
体から成る基板へマンガン（Ｍｎ）の酸化層が拡散して
基板との密着性が強固になる。According to the electrostatic chuck of the present invention, since the alloy containing molybdenum (Mo) and manganese (Mn) as main components is deposited as the conductive layer, the manganese is applied to the substrate made of the aluminum nitride sintered body. The oxide layer of (Mn) diffuses and the adhesion to the substrate becomes strong.
【００１４】また、高純度の熱伝導性に優れた窒化アル
ミニウムを主体とする膜から成る絶縁層を気相合成法で
被覆したことから、組織が均質で非常に純度が高く、耐
プラズマ性に優れ、静電チャック表面のピンホールの発
生やエッチングによる劣化も防止でき、前記基体の焼結
体中にわずかな不純物が含まれていたとしても外に放出
されず、かつ静電チャック内の温度分布が窒化アルミニ
ウム質焼結体単体で構成した場合より更に均一化され均
熱性が高まる。Further, since the insulating layer composed of a film of aluminum nitride mainly having a high purity and excellent thermal conductivity is coated by the vapor phase synthesis method, the structure is homogeneous and the purity is very high and the plasma resistance is high. It is excellent and can prevent pinholes on the surface of the electrostatic chuck and deterioration due to etching. Even if a small amount of impurities are contained in the sintered body of the substrate, it is not released to the outside and the temperature inside the electrostatic chuck is high. The distribution is more uniform than in the case where the aluminum nitride sintered body is used alone, and the soaking property is improved.
【００１５】一方、基体中に発熱回路を内蔵したことか
ら、静電チャックを小型化でき、信頼性も向上する。On the other hand, since the heating circuit is built in the substrate, the electrostatic chuck can be downsized and the reliability is improved.
【００１６】[0016]
【実施例】以下、本発明を図面に基づき詳細に述べる。
図１は、本発明の静電チャックの代表的な構造を示す断
面図である。図１において、１は窒化アルミニウム質焼
結体から成る基体２と、基体２の表面に被着形成したモ
リブデン（Ｍｏ）とマンガン（Ｍｎ）を主成分とする導
電層３と、少なくとも導電層３を覆うように被覆した窒
化アルミニウムを主体とする膜から成る絶縁層４、およ
び基体２中に内蔵した発熱回路５により構成した静電チ
ャックである。The present invention will be described in detail below with reference to the drawings.
FIG. 1 is a sectional view showing a typical structure of the electrostatic chuck of the present invention. In FIG. 1, reference numeral 1 denotes a base 2 made of an aluminum nitride sintered body, a conductive layer 3 mainly composed of molybdenum (Mo) and manganese (Mn) deposited on the surface of the base 2, and at least a conductive layer 3. Is an electrostatic chuck composed of an insulating layer 4 made of a film mainly composed of aluminum nitride so as to cover the substrate and a heating circuit 5 built in the substrate 2.
【００１７】窒化アルミニウムを主体とする膜から成る
絶縁層４は、静電チャック１の少なくともシリコンウエ
ハーの載置面だけに限るものではなく、半導体製造装置
内に露出している基体２の全表面に被覆しても良い。The insulating layer 4 made of a film mainly composed of aluminum nitride is not limited to at least the mounting surface of the electrostatic chuck 1 on which the silicon wafer is placed, but the entire surface of the substrate 2 exposed in the semiconductor manufacturing apparatus. You may coat on.
【００１８】本発明において、基体２の窒化アルミニウ
ム質焼結体は、焼結助剤としてイットリア（Ｙ）やエル
ビウム（Ｅｒ）、イッテリビウム（Ｙｂ）等の周期律表
第３ａ族元素酸化物や、カルシウム（Ｃａ）等のアルカ
リ土類元素化合物を２０重量％以下の割合で含む場合も
あるが、これらの助剤成分は半導体製造装置内で半導体
に対して不純物として作用する恐れがあるため、極力少
ないことが好ましく、例えば特開平５−１１７０３８号
公報に提案されるように助剤成分を添加しない高純度セ
ラミック焼結体であることが望ましい。In the present invention, the aluminum nitride sintered body of the substrate 2 is a Group 3a element oxide of the periodic table such as yttria (Y), erbium (Er), ytterbium (Yb) as a sintering aid, There is a case where an alkaline earth element compound such as calcium (Ca) is contained in a ratio of 20% by weight or less, but since these auxiliary components may act as impurities on the semiconductor in the semiconductor manufacturing device, It is preferable that the amount is small, and for example, a high-purity ceramic sintered body to which no auxiliary component is added, as proposed in JP-A-5-117038, is desirable.
【００１９】また、前記窒化アルミニウム質焼結体は、
サセプタの均熱性や速熱性等の点から熱伝導率が８０Ｗ
／ｍ・Ｋ以上、特に１００Ｗ／ｍ・Ｋ以上であることが
望ましい。Further, the aluminum nitride sintered body is
The thermal conductivity is 80W from the point of heat uniformity and rapid heating of the susceptor.
/ M · K or more, particularly preferably 100 W / m · K or more.
【００２０】尚、窒化アルミニウム質焼結体は、窒化ア
ルミニウム原料粉末に前記焼結助剤を添加混合したもの
を所望の形状に成形した後、窒素等の非酸化性雰囲気中
で１６００〜１９５０℃の温度で焼成することにより得
られる。The aluminum nitride sintered body is formed by mixing aluminum nitride raw material powder with the above-mentioned sintering aid into a desired shape, and then forming it in a non-oxidizing atmosphere such as nitrogen at 1600 to 1950 ° C. It is obtained by firing at the temperature of.
【００２１】次に、基体２の表面に設けた導電層３は、
モリブデン（Ｍｏ）が７０〜９５重量％、酸化マンガン
（ＭｎＯ）が２〜２０重量％、シリカ（ＳｉＯ2 ）が３
〜１５重量％から成る合金をメタライズすることにより
被着形成されており、特に、マンガン（Ｍｎ）の酸化物
層を基体１に拡散させて密着性を向上させる目的から
は、酸化マンガン（ＭｎＯ）の含有量は３〜１５重量％
が望ましい。Next, the conductive layer 3 provided on the surface of the substrate 2 is
Molybdenum (Mo) is 70 to 95% by weight, manganese oxide (MnO) is 2 to 20% by weight, and silica (SiO 2 ) is 3%.
It is deposited by metallizing an alloy of about 15% by weight. In particular, manganese oxide (MnO) is used for the purpose of diffusing an oxide layer of manganese (Mn) into the substrate 1 to improve adhesion. Content of 3 to 15% by weight
Is desirable.
【００２２】一方、気相合成法により形成された窒化ア
ルミニウムを主体とする膜から成る絶縁層４は、９９％
以上の高純度であるが、絶縁層４中には形成過程で酸素
を含んだＡｌＯＮが共存する場合があり、酸素量が２０
原子％を越えると、基体の窒化アルミニウム質焼結体と
の密着性が低下する恐れがあることから、酸素含有量は
２０原子％以下に制御することが望ましい。On the other hand, the insulating layer 4 made of a film mainly composed of aluminum nitride formed by the vapor phase synthesis method is 99%.
Although it is highly pure as described above, AlON containing oxygen may coexist in the insulating layer 4 during the formation process, and the amount of oxygen is 20%.
If it exceeds 30 atomic%, the adhesion of the base material to the aluminum nitride sintered body may decrease, so it is desirable to control the oxygen content to 20 atomic% or less.
【００２３】また、窒化アルミニウムを主体とする膜か
ら成る絶縁層４の厚さは、０．００１〜１．０ｍｍの範
囲が良く、望ましくは０．０１〜０．８ｍｍ、特に望ま
しくは０．１〜０．６ｍｍの範囲となる。The thickness of the insulating layer 4 made of a film mainly composed of aluminum nitride is preferably in the range of 0.001 to 1.0 mm, preferably 0.01 to 0.8 mm, particularly preferably 0.1. The range is up to 0.6 mm.
【００２４】その理由は、前記厚さが０．００１ｍｍ未
満になると耐電圧が小さいことから絶縁破壊を起こして
耐久性が悪くなり、逆に１．０ｍｍを越えると絶縁層４
の形成時間が長くなり、生産性が劣るからである。The reason for this is that when the thickness is less than 0.001 mm, the withstand voltage is so small that dielectric breakdown occurs and the durability deteriorates.
It takes a long time to form, resulting in poor productivity.
【００２５】また、絶縁層４の窒化アルミニウムを主体
とする膜は、高純度で熱伝導率が６０Ｗ／ｍ・Ｋ以上、
特に８０Ｗ／ｍ・Ｋ以上がより望ましい。The insulating layer 4 mainly composed of aluminum nitride has a high purity and a thermal conductivity of 60 W / mK or more,
Particularly, 80 W / m · K or more is more desirable.
【００２６】更に、本発明によれば、基体２の内部にシ
リコンウエハーを保温するための発熱回路５を組み込
み、該発熱回路５はＡｇ、Ｗ、Ｍｏ、Ｃ、ＴｉＮ、Ｐ
ｄ、ＷＣ、Ｎｉ等の発熱抵抗体でシリコンウエハーが均
一に保温できるように形成することが望ましく、基体２
との熱膨張差を小さくするという点からはＷやＭｏ、Ｔ
ｉＮ等が挙げられる。Further, according to the present invention, a heat generating circuit 5 for keeping the temperature of the silicon wafer is built in the inside of the substrate 2, and the heat generating circuit 5 is made of Ag, W, Mo, C, TiN, P.
It is desirable to form the silicon wafer with a heating resistor such as d, WC, or Ni so that the silicon wafer can be uniformly kept warm.
W, Mo, T
iN etc. are mentioned.
【００２７】また、前記発熱回路５は、窒化アルミニウ
ムを主体とする成形体に前記発熱抵抗体を所定のパター
ンで印刷した後、前記焼成条件で同時に焼成することに
より一体化することができ、前記印刷する際に使用する
ペースト中には窒化アルミニウムや焼結助剤成分を微量
添加して窒化アルミニウム質焼結体と発熱回路５との密
着性を高めることが効果的である。Further, the heat generating circuit 5 can be integrated by printing the heat generating resistor in a predetermined pattern on a molded body mainly made of aluminum nitride and then simultaneously firing it under the firing conditions. It is effective to add a small amount of aluminum nitride or a sintering aid component to the paste used for printing to enhance the adhesion between the aluminum nitride sintered body and the heating circuit 5.
【００２８】前記絶縁層４は、周知の気相合成法、例え
ばスパッタリングやイオンプレーティング等のＰＶＤ法
や、プラズマＣＶＤ、光ＣＶＤ、ＭＯ（Ｍｅｔａｌ−Ｏ
ｒｇａｎｉｃ）ＣＶＤ等のＣＶＤ法により容易に形成さ
れるものである。The insulating layer 4 is formed by a known vapor phase synthesis method, for example, a PVD method such as sputtering or ion plating, plasma CVD, photo CVD, MO (Metal-O).
It is easily formed by a CVD method such as organic (CVD).
【００２９】次に、本発明の静電チャックを評価するに
あたり、先ず窒化アルミニウム粉末にイットリア（Ｙ2
Ｏ3 ）を２重量％添加して混合した原料をシート状に成
形した後、該シート状成形体表面に窒化アルミニウムを
２重量％含有したＷペーストを用いてスクリーン印刷法
により厚さ２５μm の発熱回路パターンを形成し、それ
を前記同様の他のシート状成形体で挟んで積層し、窒素
雰囲気中、１７５０℃の温度で焼成して発熱回路を内蔵
した厚さ約５ｍｍの窒化アルミニウム質焼結体の円板を
作製した。Next, in evaluating the electrostatic chuck of the present invention, first, aluminum nitride powder was used and yttria (Y 2
2% by weight of O 3 ) was added and mixed to form a raw material into a sheet, and a W paste containing 2% by weight of aluminum nitride was used on the surface of the sheet-shaped compact by a screen printing method to generate heat with a thickness of 25 μm. A circuit pattern is formed, laminated with other sheet-shaped compacts similar to the above sandwiched, and fired at a temperature of 1750 ° C. in a nitrogen atmosphere to sinter aluminum nitride with a thickness of about 5 mm and incorporating a heating circuit. A disk of the body was made.
【００３０】得られた窒化アルミニウム質焼結体の熱伝
導率をレーザーフラッシュ法で測定したところ、厚さ３
ｍｍの条件で１７２Ｗ／ｍ・Ｋであった。The thermal conductivity of the obtained aluminum nitride sintered material was measured by the laser flash method.
It was 172 W / m · K under the condition of mm.
【００３１】次に、前記円板上に、静電チャックの電極
パターン形状に厚さ２０〜４０μmの表１に示す組成の
Ｍｏ−Ｍｎ合金から成る導電層をメタライズ法により被
着形成した。Next, a conductive layer made of a Mo--Mn alloy having a composition shown in Table 1 and having a thickness of 20 to 40 μm was formed on the disk by a metallizing method in the shape of the electrode pattern of the electrostatic chuck.
【００３２】その後、導電層を被着形成した円板をＣＶ
Ｄ処理炉を使用して、表１に示す原料ガスおよび温度条
件で熱ＣＶＤ法により種々の厚さの絶縁層を被覆し、評
価用の試料を作製した。After that, the disk on which the conductive layer was adhered and formed was subjected to CV.
Using the D treatment furnace, the insulating layers of various thicknesses were coated by the thermal CVD method under the raw material gas and temperature conditions shown in Table 1 to prepare samples for evaluation.
【００３３】尚、前記同様の窒化アルミニウム質焼結体
の円板上に、Ｗが３０原子％と窒化アルミニウムが７０
原子％から成るペーストを使用して前記同様の電極パタ
ーンを作製し、窒素雰囲気炉を用いて２００℃の温度で
焼き付け、導電層を被着形成した後、熱ＣＶＤ法により
絶縁層を被覆した試料を比較例とした。On the disk of the aluminum nitride sintered material similar to the above, W of 30 atomic% and aluminum nitride of 70 atomic% were formed.
A sample in which an electrode pattern similar to the above was prepared by using a paste consisting of atomic%, baked at a temperature of 200 ° C. in a nitrogen atmosphere furnace to form a conductive layer, and then covered with an insulating layer by a thermal CVD method. Was used as a comparative example.
【００３４】[0034]
【表１】 [Table 1]
【００３５】得られた評価用試料は、別途、基体を研磨
除去した後、燃焼分析法で絶縁層の酸素含有量を測定し
た。In the obtained sample for evaluation, after separately removing the substrate by polishing, the oxygen content of the insulating layer was measured by the combustion analysis method.
【００３６】また、絶縁層の厚さは、前記評価用試料を
切断した後、走査型電子顕微鏡にて測定した。The thickness of the insulating layer was measured with a scanning electron microscope after cutting the evaluation sample.
【００３７】絶縁層の密着性は、室温から８００℃の熱
サイクルを３回繰り返した後、基体とともに評価用試料
を切断し、切断面を実体顕微鏡による目視検査と走査型
電子顕微鏡で検査し、絶縁層や導電層に剥離や亀裂が全
く認められないものを○、一部でも認められるのを×と
して評価した。The adhesion of the insulating layer was evaluated by repeating a heat cycle from room temperature to 800 ° C. three times, cutting the sample for evaluation together with the substrate, and visually inspecting the cut surface with a stereoscopic microscope and a scanning electron microscope. The case where peeling or cracking was not observed at all in the insulating layer or the conductive layer was evaluated as ◯, and even a part thereof was evaluated as x.
【００３８】[0038]
【表２】 [Table 2]
【００３９】表１及び表２の結果から明らかなように、
酸素量が２０原子％を越える試料番号１４、１９、２４
や比較例の試料番号２９、３０、３１では、導電層や絶
縁層の剥離現象が認められ密着性不良であり、また絶縁
層の厚さが０．００１ｍｍ未満の試料番号３、２５では
絶縁破壊を起こすのに対して、本発明に係る試料はいず
れも導電層や絶縁層の基体との密着性が優れており、剥
離や亀裂は認められず、絶縁破壊もなかった。As is clear from the results shown in Tables 1 and 2,
Sample Nos. 14, 19, 24 with oxygen content exceeding 20 atomic%
In the sample numbers 29, 30, and 31 of Comparative Example, peeling phenomenon of the conductive layer and the insulating layer was observed, and the adhesion was poor. On the other hand, all the samples according to the present invention had excellent adhesion of the conductive layer and the insulating layer to the substrate, no peeling or cracking was observed, and there was no dielectric breakdown.
【００４０】[0040]
【発明の効果】叙上の如く、本発明に係る静電チャック
は、半導体製造工程において稼働中に静電チャックを構
成する導電層や絶縁層が剥離したりせず、不純物等の汚
染の恐れもなく、高温でも長期に渡り優れた信頼性と安
定性を示し、その上、格別な高純度の原料を用いる必要
もなく、製造コストの低い静電チャックを得ることがで
きる。As described above, in the electrostatic chuck according to the present invention, the conductive layer and the insulating layer forming the electrostatic chuck are not peeled off during operation in the semiconductor manufacturing process, and there is a risk of contamination by impurities and the like. In addition, it is possible to obtain an electrostatic chuck that exhibits excellent reliability and stability even at high temperatures for a long period of time, and does not require the use of an extremely high-purity raw material, and that has a low manufacturing cost.
【図１】本発明の静電チャックの代表的な構造を示す断
面図である。FIG. 1 is a cross-sectional view showing a typical structure of an electrostatic chuck of the present invention.
１ 静電チャック ２ 基体 ３ 導電層 ４ 絶縁層 ５ 発熱回路 1 Electrostatic Chuck 2 Base 3 Conductive Layer 4 Insulating Layer 5 Heating Circuit
Claims (2)
表面に、モリブデン（Ｍｏ）とマンガン（Ｍｎ）を主成
分とする導電層を被着形成し、少なくとも該導電層上
に、酸素含有量が２０原子％以下で、厚さが０．００１
〜１．０ｍｍの窒化アルミニウムを主体とする膜を気相
合成法で被覆した絶縁層を有することを特徴とする静電
チャック。1. A conductive layer containing molybdenum (Mo) and manganese (Mn) as main components is deposited on the surface of a substrate made of an aluminum nitride sintered body, and the oxygen content is at least on the conductive layer. Is less than 20 atomic% and the thickness is 0.001
An electrostatic chuck having an insulating layer obtained by coating a film mainly composed of aluminum nitride of about 1.0 mm by a vapor phase synthesis method.
表面に、モリブデン（Ｍｏ）とマンガン（Ｍｎ）を主成
分とする導電層を被着形成し、少なくとも該導電層上
に、酸素含有量が２０原子％以下で、厚さが０．００１
〜１．０ｍｍの窒化アルミニウムを主体とする膜を気相
合成法で被覆した絶縁層を有し、前記基体中に発熱回路
を内蔵することを特徴とする静電チャック。2. A conductive layer containing molybdenum (Mo) and manganese (Mn) as main components is deposited on the surface of a substrate made of an aluminum nitride sintered body, and the oxygen content is at least on the conductive layer. Is less than 20 atomic% and the thickness is 0.001
An electrostatic chuck having an insulating layer obtained by coating a film mainly composed of aluminum nitride having a thickness of up to 1.0 mm by a vapor phase synthesis method, and incorporating a heating circuit in the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11841794A JP3176219B2 (en) | 1994-05-31 | 1994-05-31 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11841794A JP3176219B2 (en) | 1994-05-31 | 1994-05-31 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07326655A true JPH07326655A (en) | 1995-12-12 |
| JP3176219B2 JP3176219B2 (en) | 2001-06-11 |
Family
ID=14736136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11841794A Expired - Fee Related JP3176219B2 (en) | 1994-05-31 | 1994-05-31 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3176219B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09237826A (en) * | 1996-02-29 | 1997-09-09 | Kyocera Corp | Electrostatic chuck |
| JPH09260474A (en) * | 1996-03-22 | 1997-10-03 | Sony Corp | Electrostatic chuck and wafer stage |
| JPH11317441A (en) * | 1998-05-06 | 1999-11-16 | Denki Kagaku Kogyo Kk | Electrostatic chuck and evaluation method thereof |
| WO2001059833A1 (en) * | 2000-02-08 | 2001-08-16 | Ibiden Co., Ltd. | Ceramic board for semiconductor production and inspection devices |
| JP2001284442A (en) * | 2000-03-31 | 2001-10-12 | Lam Res Corp | Electrostatic chuck and its manufacturing method |
| WO2001086717A1 (en) * | 2000-05-10 | 2001-11-15 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1764829A1 (en) * | 2000-01-20 | 2007-03-21 | Sumitomo Electric Industries, Ltd. | Wafer holder and semiconductor manufacturing apparatus comprising it |
| US7732010B2 (en) | 2003-05-09 | 2010-06-08 | Applied Materials, Inc. | Method for supporting a glass substrate to improve uniform deposition thickness |
| US7791708B2 (en) | 2006-12-27 | 2010-09-07 | Asml Netherlands B.V. | Lithographic apparatus, substrate table, and method for enhancing substrate release properties |
| US8173228B2 (en) | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
| US8372205B2 (en) | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
| JP2013251353A (en) * | 2012-05-31 | 2013-12-12 | Kyocera Corp | Electrostatic chuck, adsorbing method, and adsorbing device |
| US20160155655A1 (en) * | 2013-04-26 | 2016-06-02 | Kyocera Corporation | Sample holder |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4166455B2 (en) | 2001-10-01 | 2008-10-15 | 株式会社半導体エネルギー研究所 | Polarizing film and light emitting device |
| JP4024510B2 (en) | 2001-10-10 | 2007-12-19 | 株式会社半導体エネルギー研究所 | Recording medium and substrate |
-
1994
- 1994-05-31 JP JP11841794A patent/JP3176219B2/en not_active Expired - Fee Related
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09237826A (en) * | 1996-02-29 | 1997-09-09 | Kyocera Corp | Electrostatic chuck |
| JPH09260474A (en) * | 1996-03-22 | 1997-10-03 | Sony Corp | Electrostatic chuck and wafer stage |
| JPH11317441A (en) * | 1998-05-06 | 1999-11-16 | Denki Kagaku Kogyo Kk | Electrostatic chuck and evaluation method thereof |
| EP1918990A1 (en) * | 2000-01-20 | 2008-05-07 | Sumitomo Electric Industries, Ltd. | Wafer holder for a semiconductor manufacturing apparatus |
| EP1764829A1 (en) * | 2000-01-20 | 2007-03-21 | Sumitomo Electric Industries, Ltd. | Wafer holder and semiconductor manufacturing apparatus comprising it |
| WO2001059833A1 (en) * | 2000-02-08 | 2001-08-16 | Ibiden Co., Ltd. | Ceramic board for semiconductor production and inspection devices |
| US7011874B2 (en) | 2000-02-08 | 2006-03-14 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor production and inspection devices |
| JP2001284442A (en) * | 2000-03-31 | 2001-10-12 | Lam Res Corp | Electrostatic chuck and its manufacturing method |
| EP1435655A3 (en) * | 2000-05-10 | 2004-07-14 | Ibiden Co., Ltd. | Electrostatic chuck |
| WO2001086717A1 (en) * | 2000-05-10 | 2001-11-15 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1435654A2 (en) * | 2000-05-10 | 2004-07-07 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1435654A3 (en) * | 2000-05-10 | 2004-07-14 | Ibiden Co., Ltd. | Electrostatic chuck |
| US6731496B2 (en) | 2000-05-10 | 2004-05-04 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1211725A4 (en) * | 2000-05-10 | 2003-02-26 | Ibiden Co Ltd | Electrostatic chuck |
| EP1211725A1 (en) * | 2000-05-10 | 2002-06-05 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1435655A2 (en) * | 2000-05-10 | 2004-07-07 | Ibiden Co., Ltd. | Electrostatic chuck |
| US7732010B2 (en) | 2003-05-09 | 2010-06-08 | Applied Materials, Inc. | Method for supporting a glass substrate to improve uniform deposition thickness |
| US8372205B2 (en) | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
| US8173228B2 (en) | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
| US7791708B2 (en) | 2006-12-27 | 2010-09-07 | Asml Netherlands B.V. | Lithographic apparatus, substrate table, and method for enhancing substrate release properties |
| US8792085B2 (en) | 2006-12-27 | 2014-07-29 | Asml Netherlands B.V. | Lithographic apparatus, substrate table, and method for enhancing substrate release properties |
| JP2013251353A (en) * | 2012-05-31 | 2013-12-12 | Kyocera Corp | Electrostatic chuck, adsorbing method, and adsorbing device |
| US20160155655A1 (en) * | 2013-04-26 | 2016-06-02 | Kyocera Corporation | Sample holder |
| US10090183B2 (en) * | 2013-04-26 | 2018-10-02 | Kyocera Corporation | Sample holder |
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| JP3176219B2 (en) | 2001-06-11 |
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