JPH07315986A - Method for growing compound semiconductor thin film - Google Patents
Method for growing compound semiconductor thin filmInfo
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- JPH07315986A JPH07315986A JP10695094A JP10695094A JPH07315986A JP H07315986 A JPH07315986 A JP H07315986A JP 10695094 A JP10695094 A JP 10695094A JP 10695094 A JP10695094 A JP 10695094A JP H07315986 A JPH07315986 A JP H07315986A
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- gas
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- specific heat
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、有機金属気相成長法で
化合物半導体薄膜を成長する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a compound semiconductor thin film by a metal organic chemical vapor deposition method.
【０００２】[0002]
【従来の技術】従来、有機金属気相成長法で化合物半導
体薄膜を成長するときに、成長室に接続するランライン
と系外に放出するベントラインを設け、Ｖ族原料ガスの
切り換え時に水素ガスをランラインに供給して、成長室
へのガス流速並びに成長室内の圧力を一定にして成長条
件の変動を防止することが行われていた。2. Description of the Related Art Conventionally, when a compound semiconductor thin film is grown by a metal organic chemical vapor deposition method, a run line connected to a growth chamber and a vent line discharged to the outside of the system are provided, and a hydrogen gas is used when switching a group V source gas. Was supplied to the run line to keep the gas flow rate to the growth chamber and the pressure in the growth chamber constant to prevent fluctuations in the growth conditions.
【０００３】図２は、従来の有機金属気相成長法を実施
するときのＶ族原料ガスの供給ラインを示した説明図で
ある。成長室６に接続するランライン１と系外に放出す
るためのベントライン２を備え、両ラインにはマスフロ
ーコントローラー３で流量を制御された水素ガスを常時
流し、また、マスフローコントローラー３で流量制御さ
れたアルシン又はホスフィンをＶ族原料供給ライン４か
らランライン１の水素ガスに添加して成長室６に供給し
て気相成長を行う。Ｖ族原料ガスを切り換えてベントラ
イン２に流すときには、ダミーライン５からの水素ガス
をランライン１の水素ガスに添加して成長室６に供給す
ることにより、成長室６に流れるガスの流速を一定に
し、かつ、成長室６内の成長圧力も一定にして、安定し
た成長条件の下での気相成長を行うものである。FIG. 2 is an explanatory view showing a supply line for a group V source gas when a conventional metal organic chemical vapor deposition method is carried out. Equipped with a run line 1 connected to the growth chamber 6 and a vent line 2 for discharging to the outside of the system, a hydrogen gas whose flow rate is controlled by a mass flow controller 3 is constantly flown through both lines, and a flow rate is controlled by the mass flow controller 3. The arsine or phosphine thus produced is added to the hydrogen gas in the run line 1 from the group V raw material supply line 4 and supplied to the growth chamber 6 to perform vapor phase growth. When the group V source gas is switched to flow into the vent line 2, the hydrogen gas from the dummy line 5 is added to the hydrogen gas in the run line 1 and is supplied to the growth chamber 6, so that the flow velocity of the gas flowing into the growth chamber 6 is changed. The vapor phase growth is carried out under stable growth conditions, with the growth pressure in the growth chamber 6 also kept constant.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記の方法で
は、Ｖ族原料ガスと水素ガスの比熱が異なるため、前記
ガスの切り換え時に、ガスの接触する基板表面温度が変
化し、一定の成長条件の下での気相成長を妨げる原因と
なっていた。そこで、本発明では、上記の問題を解消
し、有機金属気相成長法で化合物半導体薄膜を気相成長
する際に、基板表面に供給するガスの切り換えによる基
板表面温度の変化を防止し、一定の成長条件の下におけ
る化合物半導体薄膜の気相成長を可能にする方法を提供
しようとするものである。However, in the above method, since the group V source gas and the hydrogen gas have different specific heats, the substrate surface temperature in contact with the gas changes at the time of switching the gas, and the constant growth condition is maintained. It was a cause of hindering vapor phase growth under. Therefore, the present invention solves the above problems and prevents the change in the substrate surface temperature due to the switching of the gas supplied to the substrate surface during the vapor phase growth of the compound semiconductor thin film by the metalorganic vapor phase epitaxy method, and keeps it constant. Another object of the present invention is to provide a method that enables vapor phase growth of a compound semiconductor thin film under the above growth conditions.
【０００５】[0005]
【課題を解決するための手段】本発明は、成長室に接続
するランラインと系外に放出するベントラインを備え、
Ｖ族原料供給ラインとダミーラインを上記のランライン
とベントラインに交互に接続して有機金属気相成長法で
化合物半導体薄膜を成長する方法において、Ｖ族原料に
アルシン及び／又はホスフィンを用い、Ｖ族原料供給ラ
インのガスの比熱とほぼ同じ比熱を有するガスをダミー
ライン用ガスとして用いることを特徴とする化合物半導
体薄膜の成長方法である。なお、ダミーライン用ガスと
しては、窒素、ヘリウム、アルゴン等の不活性ガスと水
素の混合比率を調整することにより、Ｖ族原料ガスとほ
ぼ同じ比熱のガスを供給することができる。The present invention comprises a run line connected to a growth chamber and a vent line discharged to the outside of the system.
In the method of growing a compound semiconductor thin film by a metal organic chemical vapor deposition method by alternately connecting a group V source material supply line and a dummy line to the above run line and vent line, using arsine and / or phosphine as a group V source material, A method for growing a compound semiconductor thin film is characterized in that a gas having a specific heat which is substantially the same as the specific heat of the gas of the group V raw material supply line is used as the dummy line gas. As the dummy line gas, by adjusting the mixing ratio of hydrogen with an inert gas such as nitrogen, helium, or argon, it is possible to supply a gas having the same specific heat as the group V source gas.
【０００６】[0006]
【作用】図１は、本発明の方法を実施するときのＶ族原
料ガスの供給ラインを示した説明図であり、図２との相
違はダミーライン５の水素ガスに窒素ガス等の不活性ガ
スを添加するライン７を付設し、マスフローコントロー
ラー３により混合比率を調節可能にしたものであるが、
その他の構成については違いがないので説明を省略す
る。FIG. 1 is an explanatory view showing a supply line of a group V source gas when carrying out the method of the present invention. The difference from FIG. 2 is that hydrogen gas in the dummy line 5 is inert such as nitrogen gas. A line 7 for adding gas is attached, and the mixing ratio can be adjusted by the mass flow controller 3.
There is no difference in other configurations, so the description is omitted.
【０００７】仮に、Ｖ族原料ガスに５％に希釈した水素
ベースのアルシンを用い、ダミーラインに水素を用いる
場合を想定すると、以下のとおりになる。 定圧比熱：Ｃｐ（ＡｓＨ3 ５％）＝１．１８８（ｃａｌ
／ｇ・Ｋ） 定圧比熱：Ｃｐ（Ｈ2 ） ＝３．４４５（ｃａｌ
／ｇ・Ｋ） 混合ガスの比熱は次のように求められる。 ＣｐAB＝ＫA ( ρA ／ρAB）ＣｐA ＋ＫB ( ρB ／
ρAB）ＣｐB ρAB＝ＫA ρA ＋ＫB ρB 式中、ＣｐAB：混合ガスの定積比熱 ＣｐA ：ガスＡの定積比熱 ＣｐB ：ガスＢの定積比熱 ρAB ：混合ガスの比重 ρA ：ガスＡの比重 ρB ：ガスＢの比重 ＫA ：ガスＡの濃度比 ＫB ：ガスＢの濃度比Assuming that hydrogen-containing arsine diluted to 5% is used as the group V source gas and hydrogen is used for the dummy line, the following is obtained. Constant pressure specific heat: Cp (AsH 3 5%) = 1.188 (cal
/ G · K) Constant pressure specific heat: Cp (H 2 ) = 3.445 (cal
/ G · K) The specific heat of the mixed gas is obtained as follows. Cp AB = K A (ρ A / ρ AB) Cp A + K B (ρ B /
ρ AB ) Cp B ρ AB = K A ρ A + K B ρ B In the formula, Cp AB : constant volume specific heat of mixed gas Cp A : constant volume specific heat of gas A Cp B : constant volume specific heat of gas B ρ AB : mixed the specific gravity of the gas [rho a: the specific gravity of the gas a [rho B: gas B specific gravity K a: concentration ratio of the gas a K B: concentration ratio of the gas B
【０００８】５％アルシンの比熱と水素の比熱は上記の
ように大きく異なる。そこで、水素に約１７．４％の窒
素を加えると、その比熱はＣｐH2N2≒１．１８９とな
り、５％のアルシンガスの比熱と一致させることができ
る。したがって、図１のダミーラインには、窒素が１
７．４％含まれる水素を流すことにより、流量、比熱と
もにＶ族原料ガスと同等に扱うことができ、基板の成長
温度を一定にして成長させることができるようになっ
た。The specific heat of 5% arsine and the specific heat of hydrogen differ greatly as described above. Then, when about 17.4% nitrogen is added to hydrogen, the specific heat becomes Cp H2N2 ≈1.189, which can be matched with the specific heat of arsine gas of 5%. Therefore, the dummy line in FIG.
By flowing the hydrogen containing 7.4%, both the flow rate and the specific heat can be treated in the same manner as the group V source gas, and the growth temperature of the substrate can be kept constant.
【０００９】同様に、Ｖ族原料ガスに２０％に希釈した
水素ベースのホスフィン〔定圧比熱：Ｃｐ（ＰＨ3 ２０
％）＝０．８６６（ｃａｌ／ｇ・Ｋ）〕を用いる場合
は、水素に約２３．０％の窒素を加えると、その比熱は
ＣｐH2N2≒０．８６６となり、２０％のホスフィンガス
の比熱と一致させることができる。[0009] Similarly, V group material gas to the hydrogen-based phosphine diluted to 20% [specific heat at constant pressure: Cp (PH 3 20
%) = 0.866 (cal / g · K)], when about 23.0% of nitrogen is added to hydrogen, the specific heat becomes Cp H2N2 ≈ 0.866, and the specific heat of phosphine gas is 20%. Can be matched with.
【００１０】[0010]
（実施例１）図１の装置を用い、ＩｎＰ基板上にＩｎＰ
／ＩｎＧａＡｓＰ／ＩｎＰ薄膜を成長させた。基板温度
を室温から成長温度である６５０℃に昇温させた。この
とき、基板の表面状態を維持するために、２０％ホスフ
ィンを２００ｓｃｃｍで基板上に供給し、ホスフィンに
対応するダミーラインには２３．０％の窒素を含む水素
ガスをホスフィンと同流量ベント側に流しておいた。(Example 1) Using the apparatus of FIG. 1, InP was formed on an InP substrate.
/ InGaAsP / InP thin film was grown. The substrate temperature was raised from room temperature to 650 ° C. which is a growth temperature. At this time, in order to maintain the surface condition of the substrate, 20% phosphine was supplied at 200 sccm on the substrate, and a dummy line corresponding to phosphine was supplied with hydrogen gas containing 23.0% nitrogen at the same flow rate vent side as phosphine. I had it washed away.
【００１１】さらに、ＩｎＧａＡｓＰを成長させるのに
必要な５％アルシン１００ｓｃｃｍをベント側に流して
おき、対応するダミーラインには１７．４％の窒素を含
む水素ガスをアルシンと同流量流し、反応管へ流してお
いた。そして、基板温度が安定した後、Ｉｎ原料を加
え、厚さ１μｍのＩｎＰ層を成長させた。Further, 100 sccm of 5% arsine necessary for growing InGaAsP is allowed to flow to the vent side, and hydrogen gas containing 17.4% nitrogen is allowed to flow into the corresponding dummy line at the same flow rate as that of arsine. I've washed away. Then, after the substrate temperature was stabilized, an In raw material was added to grow an InP layer having a thickness of 1 μm.
【００１２】上記ＩｎＰのエピタキシャル成長は、Ｉｎ
原料を反応管側からベント側に切り換えることにより成
長を終了させ、ベント側に流していた５％アルシン１０
０ｓｃｃｍを反応管側に加え、同時に対応するダミーラ
インである１７．４％の窒素を含む水素ガス１００ｓｃ
ｃｍを反応管側からベント側へ切り換えた。さらに、Ｉ
ｎ、Ｇａ原料を加えて厚さ０．１μｍのＩｎＧａＡｓＰ
層を成長させた。The epitaxial growth of InP is
The growth was terminated by switching the raw material from the reaction tube side to the vent side, and the 5% arsine 10
0 sccm was added to the reaction tube side, and at the same time, 100 sc of hydrogen gas containing 17.4% nitrogen, which is the corresponding dummy line.
cm was switched from the reaction tube side to the vent side. Furthermore, I
InGaAsP with a thickness of 0.1 μm by adding n and Ga raw materials
The layers were grown.
【００１３】上記のＩｎＧａＡｓＰ層は、Ｉｎ、Ｇａ原
料を反応管側からベント側に切り換えることにより成長
を終了させ、続いて、５％アルシン１００ｓｃｃｍを反
応管側からベント側に切り換え、同時に対応している１
７．４％の窒素を含む水素１００ｓｃｃｍのダミーライ
ンを反応管側に切り換え、Ｉｎ原料を加えて厚さ１μｍ
のＩｎＰ層を成長させた。その後、Ｉｎ原料をベント側
に切り換えて成長を終了した。この間の基板温度の変動
は０．１℃以下であり、ＩｎＧａＡｓＰエピタキシャル
層の組成は設計通りのものが得られた。The growth of the above InGaAsP layer is terminated by switching the In and Ga raw materials from the reaction tube side to the vent side, and then 5% arsine 100 sccm is switched from the reaction tube side to the vent side. There is one
The dummy line of 100 sccm of hydrogen containing 7.4% nitrogen was switched to the reaction tube side, the In raw material was added, and the thickness was 1 μm.
InP layers were grown. Then, the In raw material was switched to the vent side to complete the growth. The fluctuation of the substrate temperature during this time was 0.1 ° C. or less, and the composition of the InGaAsP epitaxial layer was as designed.
【００１４】[0014]
【発明の効果】本発明は、上記の構成を採用することに
より、Ｖ族原料ガスの切り換えにともなう成長温度の変
動を抑制することができ、安定した成長条件の下で薄膜
を成長させることが可能になった。例えば、成長温度に
敏感なＩｎＧａＡｓＰのエピタキシャル成長などにおい
ては有効である。According to the present invention, by adopting the above configuration, it is possible to suppress the fluctuation of the growth temperature due to the switching of the group V source gas, and it is possible to grow the thin film under the stable growth conditions. It became possible. For example, it is effective in the epitaxial growth of InGaAsP that is sensitive to the growth temperature.
【図１】本発明の方法を実施する装置の説明図である。1 is an illustration of an apparatus for carrying out the method of the present invention.
【図２】従来の有機金属気相成長方法を実施する装置の
説明図である。FIG. 2 is an explanatory view of an apparatus for carrying out a conventional metal-organic vapor phase epitaxy method.
Claims (2)
出するベントラインを備え、Ｖ族原料供給ラインとダミ
ーラインを上記のランラインとベントラインに交互に接
続して有機金属気相成長法で化合物半導体薄膜を成長す
る方法において、Ｖ族原料にアルシン及び／又はホスフ
ィンを用い、Ｖ族原料供給ラインのガスの比熱とほぼ同
じ比熱を有するガスをダミーライン用ガスとして用いる
ことを特徴とする化合物半導体薄膜の成長方法。1. A metal-organic vapor phase epitaxy comprising a run line connected to a growth chamber and a vent line for discharging to the outside of the system, wherein a group V source material supply line and a dummy line are alternately connected to the run line and vent line. In the method for growing a compound semiconductor thin film by the method, a group V source is arsine and / or phosphine, and a gas having a specific heat almost the same as the specific heat of the gas of the group V source supply line is used as a dummy line gas. Method for growing compound semiconductor thin film.
ウム、アルゴン等の不活性ガスと水素との混合ガスを用
いることを特徴とする請求項１記載の化合物半導体薄膜
の成長方法。2. The method for growing a compound semiconductor thin film according to claim 1, wherein a mixed gas of hydrogen and an inert gas such as nitrogen, helium, or argon is used as the dummy line gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10695094A JP3707079B2 (en) | 1994-05-20 | 1994-05-20 | Compound semiconductor thin film growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10695094A JP3707079B2 (en) | 1994-05-20 | 1994-05-20 | Compound semiconductor thin film growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07315986A true JPH07315986A (en) | 1995-12-05 |
| JP3707079B2 JP3707079B2 (en) | 2005-10-19 |
Family
ID=14446651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10695094A Expired - Fee Related JP3707079B2 (en) | 1994-05-20 | 1994-05-20 | Compound semiconductor thin film growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3707079B2 (en) |
-
1994
- 1994-05-20 JP JP10695094A patent/JP3707079B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3707079B2 (en) | 2005-10-19 |
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