JPH07294460A - X-ray analytical method and device - Google Patents
X-ray analytical method and deviceInfo
- Publication number
- JPH07294460A JPH07294460A JP6091034A JP9103494A JPH07294460A JP H07294460 A JPH07294460 A JP H07294460A JP 6091034 A JP6091034 A JP 6091034A JP 9103494 A JP9103494 A JP 9103494A JP H07294460 A JPH07294460 A JP H07294460A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- ray
- residual film
- analysis
- sample surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】本発明は表面分析技術に係り、特
に、試料表面上の残膜の分析に適したＸ線分析方法およ
び装置を提供する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface analysis technique, and particularly to an X-ray analysis method and apparatus suitable for analysis of a residual film on a sample surface.
【０００２】[0002]
【従来の技術】半導体素子の高集積化を推進するために
は、ディープサブμｍ以下のレベルでの微細加工技術を
確立しなければならない。たとえば、１ＧｂＤＲＡＭの
製作では、直径０．１６μｍ、深さ２μｍのコンタクト
ホールの加工が要求されている。このような高精度加工
技術を確立するためには、微細加工の正確さを計測、検
査する技術が必要である。これら技術のうち、ドライエ
ッチング後の残膜の種類と膜厚を分析可能な技術が特に
必要とされている。この残膜分析において留意すべき点
は、ウエハ表面上は必ずしも平坦ではなく、先のコンタ
クトホールの例に象徴されるように、起伏が大きい箇所
での分析も必要になることである。2. Description of the Related Art In order to promote high integration of semiconductor elements, it is necessary to establish a fine processing technique at a level of deep sub .mu.m or less. For example, fabrication of a 1 Gb DRAM requires processing of a contact hole having a diameter of 0.16 μm and a depth of 2 μm. In order to establish such high-precision processing technology, technology for measuring and inspecting the accuracy of fine processing is required. Among these techniques, a technique capable of analyzing the type and film thickness of the residual film after dry etching is particularly needed. A point to be noted in this residual film analysis is that the surface of the wafer is not always flat, and as shown in the above-mentioned contact hole example, analysis is also required at a portion with a large undulation.
【０００３】従来、起伏の大きな箇所における残膜分析
は、加工後のウエハを割り、その断面を走査型電子顕微
鏡（ＳＥＭ）で観察することにより行われていた。しか
し、この方法には、形状観察であるため残膜の種類の同
定が不可能であること、ウエハを割るため観察後のウエ
ハを製造プロセスに戻せないこと、また、数ｎｍオーダ
の微量残膜の観察が困難であることなど、数々の問題点
があった。Ｇｂ以降の半導体集積回路素子の開発では、
歩留まりや分析精度の低下を意味する上記問題点は致命
的である。Conventionally, the residual film analysis at a portion having a large undulation has been performed by dividing a processed wafer and observing its cross section with a scanning electron microscope (SEM). However, in this method, it is impossible to identify the type of the residual film because it is a shape observation, the wafer cannot be returned to the manufacturing process after the observation because the wafer is broken, and a small amount of residual film on the order of several nm. There were many problems, such as the difficulty of observing. In the development of semiconductor integrated circuit devices after Gb,
The above-mentioned problems, which mean a decrease in yield and analysis accuracy, are fatal.
【０００４】一方、ウエハを割ることなく分析可能な分
析法としてＸ線分析法がある。この分析法の一例として
は、たとえば、特開昭６３−２４３８５５に開示された
荷電粒子分析装置がある。この分析装置では、試料に電
子線を照射して、電子線照射により発生したＸ線を観測
する。Ｘ線の観測には、電子線中心軸と２２度の角度で
配置された分光結晶が用いられている。On the other hand, there is an X-ray analysis method as an analysis method capable of analyzing without breaking a wafer. An example of this analysis method is the charged particle analyzer disclosed in JP-A-63-243855. In this analyzer, the sample is irradiated with an electron beam and the X-ray generated by the electron beam irradiation is observed. For the X-ray observation, a dispersive crystal arranged at an angle of 22 degrees with the central axis of the electron beam is used.
【０００５】[0005]
【発明が解決しようとする課題】Ｘ線を用いて残膜を定
性、定量分析するためには、Ｘ線の観測手段の設置位置
が重要である。すなわち、発生したＸ線の吸収を避ける
ために、Ｘ線の発生位置が直視できる位置に観測手段を
設置しなければならない。しかし、Ｘ線観測手段の設置
位置に関しては、これまで明確な基準がなく、注意が払
われていなかった。たとえば、先に述べた荷電粒子分析
装置では、分光結晶が２２度の角度で配置されている
が、このような角度では発生したＸ線の吸収を避けるこ
とができない場合がある。特に、今後の半導体素子の主
流である４Ｍｂ以降のＤＲＡＭに関しては、この荷電粒
子分析装置では、試料表面上の残膜の定性、定量分析は
不可能である。In order to qualitatively and quantitatively analyze the residual film using X-rays, the installation position of the X-ray observation means is important. That is, in order to avoid absorption of the generated X-rays, the observation means must be installed at a position where the generation position of the X-rays can be viewed directly. However, no attention has been paid to the installation position of the X-ray observation means because there has been no definite standard until now. For example, in the above-mentioned charged particle analyzer, the dispersive crystal is arranged at an angle of 22 degrees, but absorption of X-rays generated at such an angle cannot be avoided. In particular, regarding a DRAM of 4 Mb or later, which will be the mainstream of semiconductor elements in the future, this charged particle analyzer cannot perform qualitative and quantitative analysis of the residual film on the sample surface.
【０００６】本発明の目的は、ウエハを割ることなく、
残膜を高精度に定性、定量分析可能なＸ線分析方法およ
び装置を提供することにある。An object of the present invention is to break a wafer without breaking it.
An object of the present invention is to provide an X-ray analysis method and apparatus capable of qualitatively and quantitatively analyzing a residual film with high accuracy.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、試料表面への低加速電子ビームの集束、照射手段
と、ビーム照射により発生したＸ線を電子ビームの近軸
方向から観測する観測手段とを設ける。In order to achieve the above object, a means for focusing and irradiating a low-acceleration electron beam on a sample surface, and an observing means for observing X-rays generated by beam irradiation from the paraxial direction of the electron beam. And.
【０００８】[0008]
【作用】物質に電子線を照射すると、Ｘ線が発生する。
Ｘ線のエネルギー（波長）は元素に固有であるため、上
記Ｘ線のエネルギー分析を行うことにより、元素の同
定、従って物質の同定を行うことができる（定性分
析）。また、Ｘ線の発生強度から物質の膜厚を把握する
ことができる（定量分析）。When the substance is irradiated with an electron beam, X-rays are generated.
Since the energy (wavelength) of X-rays is unique to each element, it is possible to identify the element and thus the substance by performing the above-mentioned X-ray energy analysis (qualitative analysis). Further, the film thickness of the substance can be grasped from the intensity of X-ray generation (quantitative analysis).
【０００９】ウエハを割ることなく起伏の大きな箇所で
も残膜の分析を可能にするためには、Ｘ線の観測方法が
重要である。半導体素子製造プロセスにおける主要残膜
は、Ｓｉ酸化膜やフォトレジストである。これらを同定
するためには、Ｃ、Ｏ、Ｓｉ等の軽元素を検出しなけれ
ばならない。電子線照射により発生したＣＫα線やＯＫ
α線はそのエネルギーが小さいため（＜１ｋｅＶ）、Ｘ
線の発生位置と観測手段との間に障害物がある場合、障
害物内部を透過できず、Ｘ線の検出は不可能である。最
も観測条件の厳しい微細孔を例にとり、この様子をさら
に詳しく説明する。An X-ray observing method is important in order to be able to analyze the residual film even at a highly uneven portion without breaking the wafer. The main residual film in the semiconductor device manufacturing process is a Si oxide film or a photoresist. In order to identify these, light elements such as C, O and Si must be detected. CKα rays and OK generated by electron beam irradiation
Since the energy of α rays is small (<1 keV), X
If there is an obstacle between the generation position of the line and the observation means, the inside of the obstacle cannot be transmitted and the X-ray cannot be detected. This situation will be described in more detail by taking a micropore, which has the strictest observation condition, as an example.
【００１０】微細孔に電子線１が入射する様子を図２に
示した。先に述べたように、Ｘ線の観測は、その発生位
置と観測手段との間に障害物がない方向から行われなけ
ればならない。すなわち、図２においてＡで示した領域
（以下では、電子線の近軸方向とよぶ）からＸ線を観測
することが必要である。ここで、角θは微細孔の直径２
ａと深さｄを用いて、ｔａｎθ＝（ａ／ｄ）により決定
される角度である。今後半導体素子の高集積化が進み４
Ｍｂ以降のＤＲＡＭのコンタクトホールでは、この角θ
は、２０度以内の領域でＸ線を観測することが必要であ
る。特開昭６３−２４３８５５に示された荷電粒子分析
装置では、分光結晶が電子線中心軸と２２度の角度で配
置されているため、４Ｍｂ以降のＤＲＡＭへの適用は不
可能である。これに対し、本発明で採用しているＸ線の
観測手段に関しては、Ｘ線検出器の受光面の一部もしく
は全部、あるいは、Ｘ線検出器へＸ線を導く光学素子の
一部もしくは全部が、この角θで定義される領域内（す
なわち、図２の領域Ａ内）に設置されるように留意して
いる。このような観測手段としては様々な方式が考えら
れるが、詳細については実施例の項で説明する。FIG. 2 shows how the electron beam 1 enters the fine holes. As described above, the X-ray observation must be performed from the direction where there is no obstacle between the generation position and the observation means. That is, it is necessary to observe the X-rays from the region indicated by A in FIG. 2 (hereinafter referred to as the paraxial direction of the electron beam). Here, the angle θ is the diameter 2 of the fine hole.
It is an angle determined by tan θ = (a / d) using a and depth d. Higher integration of semiconductor devices will progress in the future 4
In the contact hole of DRAM after Mb, this angle θ
, It is necessary to observe X-rays within a range of 20 degrees or less. In the charged particle analyzer disclosed in JP-A-63-243855, since the dispersive crystal is arranged at an angle of 22 degrees with the electron beam central axis, it cannot be applied to DRAM of 4 Mb or later. On the other hand, regarding the X-ray observing means employed in the present invention, part or all of the light-receiving surface of the X-ray detector, or part or all of the optical element that guides the X-ray to the X-ray detector. Are installed within the area defined by this angle θ (that is, within the area A in FIG. 2). Although various methods are conceivable as such an observing means, details will be described in the section of Examples.
【００１１】以上述べたように、試料表面に電子線を照
射して、発生したＸ線を電子線の近軸方向から観測する
ことにより、起伏の小さい試料はもとより、微細孔等を
有する起伏の大きな試料に対してもウエハを割ることな
く、試料表面の残膜の定性、定量分析が可能である。As described above, by irradiating the sample surface with an electron beam and observing the generated X-rays from the paraxial direction of the electron beam, not only the sample with small undulations but also the undulations with fine holes or the like are observed. Even for a large sample, qualitative and quantitative analysis of the residual film on the sample surface is possible without breaking the wafer.
【００１２】[0012]
【実施例】本発明のいくつかの実施例を図を用いて具体
的に説明する。EXAMPLES Some examples of the present invention will be specifically described with reference to the drawings.
【００１３】＜実施例１＞本発明の最も基本的な実施例
を図１に示した。図では、加速された電子線１が試料２
の表面に垂直に照射されている。ここで、電子線１のビ
ーム径は残膜の堆積領域の大きさ（たとえば微細孔の直
径）に比べて十分小さく、電子線１の加速エネルギーは
５ｋｅＶ以下に制御されている。電子線１の集束、加速
は対物レンズ３およびコンデンサレンズ４により行われ
ている。<Embodiment 1> The most basic embodiment of the present invention is shown in FIG. In the figure, the accelerated electron beam 1 is the sample 2
The surface is illuminated vertically. Here, the beam diameter of the electron beam 1 is sufficiently smaller than the size of the deposition region of the residual film (for example, the diameter of the fine holes), and the acceleration energy of the electron beam 1 is controlled to 5 keV or less. Focusing and acceleration of the electron beam 1 are performed by the objective lens 3 and the condenser lens 4.
【００１４】電子線１の照射により、残膜からＸ線５が
発生する。このＸ線５は、対物レンズ３とコンデンサレ
ンズ４の中間位置で電子線１の近軸に設けられた検出器
６で検出される。検出器６は、Ｘ線固体検出器（ＳＳ
Ｄ）やハーピコン（撮像管）等に代表される、エネルギ
ー分析機能を有する検出器である。検出器６の設置に関
して重要な点は、Ｘ線５の受光面の全部もしくは一部が
図２に示した領域Ａの内部に収まるように、検出器６を
設置することである。また、検出器６をできるだけ電子
線１に近ずけるため、検出器６の側面において通過する
電子線１を集光させることが肝要である。検出器６でＸ
線５のエネルギー強度を測定することにより、残膜の定
性、定量分析ができる。By the irradiation of the electron beam 1, X-rays 5 are generated from the residual film. The X-ray 5 is detected by a detector 6 provided on the paraxial line of the electron beam 1 at an intermediate position between the objective lens 3 and the condenser lens 4. The detector 6 is an X-ray solid state detector (SS
D), a harpicon (image pickup tube), etc., and a detector having an energy analysis function. An important point regarding the installation of the detector 6 is that the detector 6 is installed so that all or part of the light-receiving surface of the X-ray 5 fits inside the area A shown in FIG. Further, in order to bring the detector 6 as close to the electron beam 1 as possible, it is important to collect the electron beam 1 passing on the side surface of the detector 6. X at detector 6
By measuring the energy intensity of the line 5, the residual film can be qualitatively and quantitatively analyzed.
【００１５】ＳｉＫα線等の高いエネルギーをもつＸ線
は、数μｍ程度の厚みを有する物質を透過することがで
きる。このような高エネルギーＸ線に関しては、側面に
設置された検出器７を用いても検出が可能である。検出
器７もエネルギー分析機能を備えたＸ線固体検出器等で
よい。さらに、検出器６および７の信号強度を比較する
ことにより、物質内部を透過することによるＸ線の減衰
率を知ることができる。この減衰率から物質の厚みを知
ることが可能であり、たとえば試料２表面上の微細孔の
深さを求めることも可能である。X-rays having high energy such as SiKα rays can pass through a substance having a thickness of several μm. Such high energy X-rays can also be detected using the detector 7 installed on the side surface. The detector 7 may also be an X-ray solid state detector having an energy analysis function. Furthermore, by comparing the signal intensities of the detectors 6 and 7, it is possible to know the attenuation rate of the X-rays that have been transmitted through the inside of the substance. The thickness of the substance can be known from this attenuation rate, and for example, the depth of the micropores on the surface of the sample 2 can be obtained.
【００１６】電子線１の照射により、試料２の表面から
２次電子も発生する。検出器８はこの２次電子を検出す
る２次電子検出器である。電子線１を試料２の表面上で
走査しながら２次電子を検出することにより、試料２表
面の２次電子像が得られる。この２次電子像を用いる
と、分析すべき残膜の位置を容易に把握、設定できる。The irradiation of the electron beam 1 also generates secondary electrons from the surface of the sample 2. The detector 8 is a secondary electron detector that detects this secondary electron. A secondary electron image on the surface of the sample 2 is obtained by detecting secondary electrons while scanning the surface of the sample 2 with the electron beam 1. By using this secondary electron image, the position of the residual film to be analyzed can be easily grasped and set.
【００１７】ハウジング９は矢印の方向に移動可能であ
る。例えば、電子線１の加速、集光が異なった状態でＸ
線分析を行う場合でも、電子線１に対するハウジング９
の距離を常に一定に設定できる。The housing 9 is movable in the direction of the arrow. For example, when the electron beam 1 is accelerated and focused differently, X
The housing 9 for the electron beam 1 even when performing line analysis
The distance can be set to always constant.
【００１８】本実施例によれば、低エネルギー電子線の
照射により発生したＸ線を電子線の近軸方向から観測で
きるため、起伏の大きな試料に対しても試料を割ること
なく、残膜を高精度に定性、定量分析可能である。従っ
て、分析後に試料（例えばウエハ）を製造プロセスに戻
すことが可能である。According to this embodiment, since X-rays generated by irradiation with a low energy electron beam can be observed from the paraxial direction of the electron beam, the residual film can be removed without breaking the sample even if the sample has large undulations. Highly accurate qualitative and quantitative analysis is possible. Therefore, it is possible to return the sample (eg wafer) to the manufacturing process after analysis.
【００１９】＜実施例２＞図３は、加速された電子線１
が検出器１０の中央部に設けられた穴１１を通過して、
試料２の表面に垂直に照射されている。穴１１の直径は
０．１〜５ｍｍ程度でよい。電子線１の照射により発生
したＸ線５は、検出器１０で検出され、エネルギー分析
される。<Embodiment 2> FIG. 3 shows an accelerated electron beam 1
Passes through a hole 11 provided in the center of the detector 10,
The surface of the sample 2 is irradiated vertically. The diameter of the hole 11 may be about 0.1 to 5 mm. The X-rays 5 generated by the irradiation of the electron beam 1 are detected by the detector 10 and energy analyzed.
【００２０】検出器１０の検出素子形状はドーナツ状で
あるため、実施例１で用いた検出器６に比べて検出素子
の受光面積を大きくすることができる。具体的には、検
出器６の素子面積は３０ｍｍ2であるが、検出器１０は
１５０ｍｍ2と５倍の素子面積にすることができる。従
って、実施例１に比べて更に高感度の残膜分析が可能で
ある。Since the detector 10 has a donut-shaped detector element, the light receiving area of the detector can be made larger than that of the detector 6 used in the first embodiment. Specifically, the detector 6 has an element area of 30 mm 2 , but the detector 10 can have an element area of 5 times 150 mm 2 . Therefore, it is possible to perform the residual film analysis with higher sensitivity than that of the first embodiment.
【００２１】なお、検出器１０は上記実施例に限定され
るものではなく、検出素子の受光面積を実質的に大きく
できる他の手段に置き換えることも可能である。例え
ば、実施例１で用いた検出器６を２式以上設置しても良
いし、ハウジング９の先端部に２個以上の検出素子を円
形に並べた構造のものを用いても良い。本実施例は、電
子線１を遮ぎることなく検出素子の受光面積を実質的に
大きくすることが肝要である。The detector 10 is not limited to the above embodiment, but may be replaced with other means capable of substantially increasing the light receiving area of the detecting element. For example, two or more detectors 6 used in the first embodiment may be installed, or a structure in which two or more detection elements are arranged in a circle at the tip of the housing 9 may be used. In the present embodiment, it is important to substantially increase the light receiving area of the detection element without blocking the electron beam 1.
【００２２】以上に述べたように、本実施例は、実施例
１に比べて検出器の検出素子面積が大きいため、更に高
感度の残膜分析が可能である。その他の効果は実施例１
と同じである。As described above, in the present embodiment, the area of the detector element of the detector is larger than that of the first embodiment, and therefore the residual film analysis with higher sensitivity can be performed. Other effects are in Example 1
Is the same as.
【００２３】＜実施例３＞図４は、対物レンズ３の内部
にエネルギー分析機能を有する検出器６を設置した実施
例である。<Embodiment 3> FIG. 4 shows an embodiment in which a detector 6 having an energy analysis function is installed inside the objective lens 3.
【００２４】本実施例ではＸ線の検出に検出器６を用い
たが、実施例２で述べた同軸型の検出器１０を対物レン
ズ３の内部に設置することも可能である。In this embodiment, the detector 6 is used for detecting X-rays, but the coaxial detector 10 described in Embodiment 2 can be installed inside the objective lens 3.
【００２５】本実施例では、実施例１、２に比べて、検
出器６を試料２の近くに設置できるため、大きな信号強
度が得られる。この結果、より高感度の残膜分析が可能
である。その他の効果は実施例１と同じである。In this embodiment, the detector 6 can be installed closer to the sample 2 as compared with the first and second embodiments, so that a large signal intensity can be obtained. As a result, a more sensitive residual film analysis is possible. Other effects are the same as those of the first embodiment.
【００２６】＜実施例４＞図５は、コンデンサレンズ４
の内部にエネルギー分析機能を有する検出器６を設置し
た実施例である。Example 4 FIG. 5 shows a condenser lens 4
This is an example in which a detector 6 having an energy analysis function is installed inside the.
【００２７】本実施例ではＸ線の検出に検出器６を用い
たが、同軸型の検出器１０をコンデンサレンズ４の内部
に設置することも可能である。In this embodiment, the detector 6 is used for detecting X-rays, but it is also possible to install the coaxial detector 10 inside the condenser lens 4.
【００２８】本実施例では、実施例１〜３に比べて検出
器６と試料２表面との距離が長いため、得られる信号強
度は若干小さくなる。しかし、検出器６と試料２表面と
の距離を長くすることにより、図２に示した角θが小さ
な試料、すなわち直径２ａがより小さな微細孔内部の残
膜分析が可能である。その他の効果は実施例１と同じで
ある。In this embodiment, since the distance between the detector 6 and the surface of the sample 2 is longer than in the first to third embodiments, the obtained signal intensity is slightly smaller. However, by increasing the distance between the detector 6 and the surface of the sample 2, it is possible to analyze the residual film inside the sample having a small angle θ shown in FIG. 2, that is, inside the micropore having a smaller diameter 2a. Other effects are the same as those of the first embodiment.
【００２９】＜実施例５＞図６は、検出器６を対物レン
ズ３の下側に設置した場合の実施例である。<Embodiment 5> FIG. 6 shows an embodiment in which the detector 6 is installed below the objective lens 3.
【００３０】本実施例では、実施例１、２に比べて、試
料２表面から検出器６までの距離を小さくすることがで
き、試料２表面より発生するＸ線５が減衰すること無く
検知、検出できる。従って、実施例１〜４に比べて強い
Ｘ線信号を得ることができ、より高感度の残膜分析が可
能である。その他に関しては、実施例１と同じである。In this embodiment, the distance from the surface of the sample 2 to the detector 6 can be made smaller than in the first and second embodiments, and the X-rays 5 generated from the surface of the sample 2 can be detected without being attenuated. Can be detected. Therefore, a stronger X-ray signal can be obtained as compared with Examples 1 to 4, and more sensitive residual film analysis is possible. Others are the same as in the first embodiment.
【００３１】＜実施例６＞図７は、ドーナツ状の検出器
１０を対物レンズ３の下側に設置した場合の実施例であ
る。Example 6 FIG. 7 shows an example in which the donut-shaped detector 10 is installed below the objective lens 3.
【００３２】本実施例では、実施例５と同様に、試料２
表面から検出器６までの距離を小さくすることができ、
更に実施例２と同様に検知素子面積を大きくすることが
できるため、実施例１〜５に比べて、より高感度の残膜
分析が可能である。その他に関しては、実施例１と同じ
である。In this example, as in Example 5, sample 2 was used.
The distance from the surface to the detector 6 can be reduced,
Further, since the detection element area can be increased similarly to the second embodiment, the residual film analysis with higher sensitivity can be performed as compared with the first to fifth embodiments. Others are the same as in the first embodiment.
【００３３】＜実施例７＞本実施例では、試料表面の残
膜厚の定量分析を行う際の分析手順について説明する。<Embodiment 7> In this embodiment, an analysis procedure for quantitatively analyzing the residual film thickness on the sample surface will be described.
【００３４】まず、分析装置内に設けられたファラデー
カップ等の計測手段により、電子線１のビーム電流値を
計測する。ビーム電流値の計測手段の設置位置は、特に
定めるものではないが、試料２を支持する試料ホルダー
上に設けた方が良い。次に、２次電子検出器８を用いて
試料２表面の分析すべき残膜の位置決めを行った後、実
施例１〜６のいずれかの方法により残膜厚の定量分析を
行う。First, the beam current value of the electron beam 1 is measured by a measuring means such as a Faraday cup provided in the analyzer. The installation position of the beam current value measuring means is not particularly limited, but it is better to provide it on the sample holder that supports the sample 2. Next, after the residual film to be analyzed on the surface of the sample 2 is positioned by using the secondary electron detector 8, the residual film thickness is quantitatively analyzed by any of the methods of Examples 1 to 6.
【００３５】実施例１〜６で述べた分析方法および装置
において、残膜厚分析精度を劣化させる要因としては、
電子線１のビーム電流値が様々な要因により変動するこ
とである。試料２表面より発生するＸ線５の発生量は照
射されたビーム電流密度に比例するため、ビーム電流値
が変動するとＸ線５の発生量も変動し、正確な残膜厚を
計測できなくなる。従って、高精度の残膜厚計測を行う
ためには、ビーム電流値とＸ線５信号強度の関係を明ら
かにする必要がある。本実施例で述べた計測手順によれ
ば、ビーム電流値を計測した後にＸ線５信号強度を計測
するため、ビーム電流値とＸ線５信号強度との対応を把
握できる。Ｘ線５信号強度をビーム電流値で規格化する
ことにより、高精度の残膜厚計測が可能である。In the analysis method and apparatus described in Examples 1 to 6, the factors that deteriorate the accuracy of residual film thickness analysis are:
That is, the beam current value of the electron beam 1 varies due to various factors. The amount of X-rays 5 generated from the surface of the sample 2 is proportional to the irradiated beam current density. Therefore, if the beam current value changes, the amount of X-rays 5 also changes, making it impossible to accurately measure the residual film thickness. Therefore, in order to measure the residual film thickness with high accuracy, it is necessary to clarify the relationship between the beam current value and the X-ray 5 signal intensity. According to the measurement procedure described in the present embodiment, the X-ray 5 signal intensity is measured after measuring the beam current value, so that the correspondence between the beam current value and the X-ray 5 signal intensity can be grasped. By standardizing the X-ray 5 signal intensity by the beam current value, it is possible to measure the remaining film thickness with high accuracy.
【００３６】分析装置の試料ステージに位置検出、記
憶、および駆動制御機構を備えている場合には、ビーム
電流計測位置と試料の定量分析位置（分析位置が複数の
場合でも良い）を記憶し、試料ステージを任意の位置に
高速で移動させることにより、ビーム電流と試料表面の
交互計測を効率的に行うことができる。When the sample stage of the analyzer is equipped with a position detection, storage, and drive control mechanism, the beam current measurement position and the sample quantitative analysis position (there may be a plurality of analysis positions) are stored, By moving the sample stage to an arbitrary position at high speed, the beam current and the sample surface can be alternately measured efficiently.
【００３７】以上に述べたように、本実施例によれば、
ビーム電流値とＸ線５信号強度との対応を把握でき、Ｘ
線５信号強度をビーム電流値で規格化することにより、
高精度の残膜厚計測が可能である。As described above, according to this embodiment,
The correspondence between the beam current value and the X-ray 5 signal strength can be grasped, and X
By normalizing the line 5 signal strength with the beam current value,
Highly accurate residual film thickness measurement is possible.
【００３８】＜実施例８＞本実施例は、実施例７とは異
なる試料表面の残膜厚の定量分析手順について説明す
る。<Embodiment 8> In this embodiment, a procedure for quantitative analysis of the residual film thickness on the sample surface different from that of Embodiment 7 will be described.
【００３９】まず、あらかじめ材質のわかっている比較
用試料のＸ線強度を計測する。比較用試料の設置位置
は、特に定めるものではないが、試料２を支持する試料
ホルダー上に設けた方が良い。次に、２次電子検出器８
を用いて試料２表面の分析すべき残膜の位置決めを行っ
た後、実施例１〜６のいずれかの方法により残膜厚の定
量分析を行う。First, the X-ray intensity of a comparative sample whose material is known in advance is measured. The installation position of the comparative sample is not particularly limited, but it is better to provide it on the sample holder that supports the sample 2. Next, the secondary electron detector 8
After the residual film to be analyzed on the surface of the sample 2 is positioned by using, the quantitative analysis of the residual film thickness is performed by any of the methods of Examples 1 to 6.
【００４０】実施例７では残膜からのＸ線５信号強度を
ビーム電流値で規格化する分析手法であるが、本実施例
では、比較用試料のＸ線強度で規格化する方法である。In the seventh embodiment, the X-ray 5 signal intensity from the residual film is standardized by the beam current value, but in the present embodiment, the X-ray intensity of the comparative sample is standardized.
【００４１】本実施例においても、実施例７と同等の効
果が得られる。Also in this embodiment, the same effect as that of the seventh embodiment can be obtained.
【００４２】＜実施例９＞本実施例では、半導体製造プ
ロセスのコンタクト開口工程における開口部下地材料の
削れ量を、実施例１〜８のいずれかにより計測する方法
について述べる。<Embodiment 9> In this embodiment, a method for measuring the amount of scraping of the opening base material in the contact opening step of the semiconductor manufacturing process will be described.
【００４３】半導体素子のコンタクトホール部の断面図
を図８に示す。図中１２はシリコン基板、１３は素子分
離用絶縁膜、１４はゲート絶縁膜、１５はゲート電極、
１６はソース・ドレイン高濃度拡散層、１７はレジス
ト、１８は層間絶縁膜、１９、２０はコンタクトホー
ル、２１は下地材料（この場合は素子分離用絶縁膜１
３）削れ量評価用のコンタクトホールをそれぞれ示して
いる。本実施例の特徴は、下地材料削れ量を評価するた
めのコンタクトホールを半導体素子上に形成したことで
ある。実施例１〜８のいずれかの方法を用いて、コンタ
クトホール２１底面の素子分離用絶縁膜１３の残膜厚を
計測する。コンタクト開口前の素子分離用絶縁膜１３の
元の膜厚と計測後の残膜厚との差より、コンタクト開口
工程における下地材料の削れ量を知ることができる。A cross-sectional view of the contact hole portion of the semiconductor element is shown in FIG. In the figure, 12 is a silicon substrate, 13 is an insulating film for element isolation, 14 is a gate insulating film, 15 is a gate electrode,
Reference numeral 16 is a source / drain high-concentration diffusion layer, 17 is a resist, 18 is an interlayer insulating film, 19 and 20 are contact holes, and 21 is a base material (in this case, the element isolation insulating film 1).
3) Shows contact holes for evaluating the amount of scraping. The feature of this embodiment is that a contact hole for evaluating the amount of abrasion of the base material is formed on the semiconductor element. The remaining film thickness of the element isolation insulating film 13 on the bottom surface of the contact hole 21 is measured using any of the methods of Examples 1 to 8. From the difference between the original film thickness of the element isolation insulating film 13 before the contact opening and the remaining film thickness after the measurement, it is possible to know the abrasion amount of the base material in the contact opening step.
【００４４】素子分離用絶縁膜１３の残膜厚を計測する
うえで考慮すべき点は、残膜厚に応じて電子線の加速電
圧を適切に設定することである。Ｘ線信号強度の絶縁膜
（ＳｉＯ2膜）の膜厚依存性を図９に示す。図９より、
加速電圧が２ｋｅＶの場合は、Ｘ線信号強度は高い反
面、ＳｉＯ2膜厚が比較的厚くなるとＸ線信号強度が飽
和するため厚いＳｉＯ2膜の膜厚計測ができない。一
方、加速電圧が５ｋｅＶの場合は、Ｘ線信号強度は低い
反面、厚いＳｉＯ2膜の膜厚計測が可能である。加速電
圧が低い方がＸ線信号強度が大きいのは、Ｘ線収量は加
速電圧の関数であり、Ｘ線エネルギー（ＯＫα：約０．
５ｋｅＶ）のほぼ３倍の加速電圧で収量が最大値となる
（エー．ジー．ミチェット、オプティカル．システム
ズ．フォー．ソフト．Ｘレイズ（プレナムプレス、ニュ
ーヨーク、１９８６年）、Ｐ２２。A. G. Michette, Op
tical systems for soft X-ray (Prenum Press, New Yo
rk, 1986),p.22）ためである。なお、加速電圧を５ｋｅ
Ｖよりも高くすると、Ｘ線信号強度が著しく低下するた
め膜厚計測は不可能である。加速電圧の高い方が厚いＳ
ｉＯ2膜の膜厚計測が可能なのは、加速電圧が高いほど
ＳｉＯ2膜中への電子の侵入深さが深くなるためであ
る。以上のことより、ＳｉＯ2膜厚が薄い場合は２ｋｅ
Ｖと加速電圧を低く、厚い場合は加速電圧を５ｋｅＶと
高く設定する必要がある。A point to be considered in measuring the remaining film thickness of the element isolation insulating film 13 is to appropriately set the accelerating voltage of the electron beam according to the remaining film thickness. FIG. 9 shows the dependence of the X-ray signal intensity on the thickness of the insulating film (SiO 2 film). From Figure 9,
When the accelerating voltage is 2 keV, the X-ray signal intensity is high, but when the SiO 2 film thickness is relatively thick, the X-ray signal intensity saturates, making it impossible to measure the thickness of a thick SiO 2 film. On the other hand, when the acceleration voltage is 5 keV, the X-ray signal intensity is low, but the thickness of a thick SiO 2 film can be measured. The X-ray yield is a function of the acceleration voltage because the X-ray signal intensity is higher when the acceleration voltage is lower, and the X-ray energy (OKα: about 0.
The maximum yield is obtained at an accelerating voltage of approximately 3 times 5 keV (AG Michette, Optical Systems for Soft X Rays (Plenum Press, New York, 1986), P22. AG Michette, Op.
tical systems for soft X-ray (Prenum Press, New Yo
rk, 1986), p.22). The acceleration voltage is 5 ke
If it is higher than V, the film thickness cannot be measured because the X-ray signal intensity is significantly reduced. The higher the acceleration voltage, the thicker S
The thickness of the iO 2 film can be measured because the penetration depth of electrons into the SiO 2 film increases as the acceleration voltage increases. From the above, when the SiO 2 film thickness is thin, 2 ke
V and accelerating voltage are low, and when thick, it is necessary to set accelerating voltage as high as 5 keV.
【００４５】以上に述べたように、本実施例によれば、
半導体素子上に下地材料削れ量を評価するためのコンタ
クトホールを形成し、コンタクトホール底面の下地材料
の残膜厚を最適加速電圧で計測することにより、下地材
料の削れ量をインラインで評価することができる。As described above, according to this embodiment,
Inline evaluation of the amount of ground material scraped by forming a contact hole on the semiconductor element to evaluate the amount of ground material scraped and measuring the remaining film thickness of the ground material on the bottom of the contact hole at the optimum acceleration voltage. You can
【００４６】＜実施例１０＞図１０は試料表面を加熱す
る手段を設けた場合の実施例の一例である。本実施例で
は、試料２表面上の電子線１の照射領域を含む領域を、
電子線１の照射中に加熱しながら実施例１〜７のいずれ
かの手段により分析を行った。加熱手段としては波長８
００ｎｍの半導体レーザ２２を用い、レーザ光照射領域
（約５ｍｍφ）の試料２の表面温度を２００℃に加熱し
た。<Embodiment 10> FIG. 10 shows an example of an embodiment in which means for heating the sample surface is provided. In this embodiment, an area including the irradiation area of the electron beam 1 on the surface of the sample 2 is
The analysis was performed by any one of Examples 1 to 7 while heating during irradiation with the electron beam 1. Wavelength 8 as heating means
Using the semiconductor laser 22 of 00 nm, the surface temperature of the sample 2 in the laser light irradiation region (about 5 mmφ) was heated to 200 ° C.
【００４７】試料２表面に電子線１を照射すると、電子
線照射領域の試料表面に炭素化合物が付着する。試料表
面の残膜分析の際に、残膜からのＸ線強度が弱い（例え
ば残膜厚が薄い）場合は、前記炭素化合物の影響により
分析感度が低下する。薄い残膜を高感度に分析するため
には、電子線を照射しても試料表面への炭素化合物の付
着を防止する必要がある。本実施例によれば、試料２表
面温度を２００℃に加熱することにより、試料表面への
炭素化合物の付着を抑止することができ、残膜からのＸ
線強度が弱い場合でも高感度の残膜分析が可能である。When the sample 2 surface is irradiated with the electron beam 1, the carbon compound adheres to the sample surface in the electron beam irradiation region. When the X-ray intensity from the residual film is weak (for example, the residual film thickness is thin) in the residual film analysis of the sample surface, the analysis sensitivity is lowered due to the influence of the carbon compound. In order to analyze a thin residual film with high sensitivity, it is necessary to prevent the carbon compound from adhering to the sample surface even when irradiated with an electron beam. According to this example, by heating the surface temperature of the sample 2 to 200 ° C., it is possible to prevent the carbon compound from adhering to the surface of the sample, and the X from the residual film can be suppressed.
High sensitive residual film analysis is possible even when the line intensity is weak.
【００４８】本実施例の加熱手段には半導体レーザを用
いたが、試料表面の加熱手段を特に限定するものではな
く、実質的に試料表面の加熱が可能であれば如何なる手
段を用いてもよい。なお、試料表面への炭素化合物付着
の抑止を行うためには、加熱温度を１００℃以上にする
必要がある。Although the semiconductor laser is used as the heating means in this embodiment, the means for heating the sample surface is not particularly limited, and any means can be used as long as the sample surface can be heated substantially. . The heating temperature must be 100 ° C. or higher in order to prevent the carbon compound from adhering to the sample surface.
【００４９】試料表面への炭素化合物付着の抑止は、試
料加熱以外の手段でも達成可能である。電子線照射によ
りＸ線を発生させる手段、およびＸ線分析を行う手段は
真空中に設置されているが、真空度を１×１０‐6ｔｏ
ｒｒ以下にすることにより真空中に存在する炭素化合物
量を低減でき、試料表面への炭素化合物付着を抑止でき
る。Suppression of carbon compound adhesion to the sample surface can be achieved by means other than sample heating. The means for generating X-rays by electron beam irradiation and the means for performing X-ray analysis are installed in a vacuum, but the degree of vacuum is 1 × 10 −6 to
By setting it to be rr or less, the amount of carbon compounds existing in vacuum can be reduced, and the adhesion of carbon compounds to the sample surface can be suppressed.
【００５０】以上に述べたように、本実施例によれば、
試料表面を加熱することにより、試料表面への炭素化合
物の付着を抑止でき、高感度の残膜計測が可能である。As described above, according to this embodiment,
By heating the sample surface, it is possible to prevent carbon compounds from adhering to the sample surface, and highly sensitive residual film measurement is possible.
【００５１】＜実施例１１＞実施例１〜１０で述べた分
析方法および装置に他機能を付加することにより、分析
装置としての汎用性を広げることができる。付加する機
能としては、微細パタンの寸法測定機能（測長機能）や
電子線の高加速化機能が考えられる。<Embodiment 11> By adding other functions to the analysis method and apparatus described in Embodiments 1 to 10, versatility as an analysis apparatus can be expanded. As a function to be added, a dimension measuring function of fine pattern (length measuring function) and a function of accelerating electron beam can be considered.
【００５２】図１１にこの実施例の一例を示した。電子
源２３からの電子線１は、対物レンズ３、コンデンサレ
ンズ４により加速、集束され、試料２表面上に照射され
る。この照射により発生したＸ線５は、電子線１の近軸
方向に設置されたエネルギー分析機能を有する検出器６
で検出される。検出器６からのＸ線５の検出信号はコン
トローラ２４で処理された後、制御・処理装置２５に送
られ分析結果が表示される。FIG. 11 shows an example of this embodiment. The electron beam 1 from the electron source 23 is accelerated and focused by the objective lens 3 and the condenser lens 4, and is irradiated onto the surface of the sample 2. The X-ray 5 generated by this irradiation is a detector 6 installed in the paraxial direction of the electron beam 1 and having an energy analysis function.
Detected in. The detection signal of the X-ray 5 from the detector 6 is processed by the controller 24 and then sent to the control / processing device 25 to display the analysis result.
【００５３】本実施例では、制御装置２６を用いて、電
子線１の加速エネルギーを０．１〜２００ｋｅＶの間で
自由に変化させることができる。低加速エネルギーの場
合には、これまで述べてきたようにＸ線を用いて残膜の
定性、定量分析が可能であり、高加速エネルギー（＞５
０ｋｅＶ）の場合には、試料２表面からの２次電子や反
射電子を検出することにより、試料２表面の像を得るこ
とが可能である。特に、高加速エネルギーの電子は、物
質内部を透過する能力が高いため、反射電子を検出する
ことにより、たとえば微細孔内部の形状観察が可能であ
る。この２次電子や反射電子の検出には電子検出器２７
を用いる。この結果、形状観察に加え、その形状を構成
している元素の種類等の同定も可能となる。In this embodiment, the control device 26 can be used to freely change the acceleration energy of the electron beam 1 between 0.1 and 200 keV. In the case of low acceleration energy, qualitative and quantitative analysis of the residual film is possible using X-rays as described above, and high acceleration energy (> 5)
In the case of 0 keV), it is possible to obtain an image of the surface of the sample 2 by detecting secondary electrons and reflected electrons from the surface of the sample 2. In particular, since electrons with high acceleration energy have a high ability to penetrate the inside of a substance, it is possible to observe the shape of, for example, the inside of micropores by detecting reflected electrons. An electron detector 27 is used to detect the secondary electrons and the reflected electrons.
To use. As a result, in addition to shape observation, it is possible to identify the types of elements that make up the shape.
【００５４】図１１に示された装置には微細パタンの測
長機能も付加されている。微細パタンの寸法測定は、た
とえば、以下に述べるように行われる。制御装置２６を
用いて電子レンズ系３、４を制御することにより、電子
線１で試料２表面上を走査して、制御・処理装置２５の
画面上に試料２表面の２次電子像を映しだす。この場合
の電子線１の加速エネルギーは５ｋｅＶ以下でよい。こ
の２次電子像をもとに寸法測定を行う微細パタンを指定
し、電子線１の偏向量もしくはステージ２８の移動量か
らパタン寸法を得ることができる。The apparatus shown in FIG. 11 is also provided with a fine pattern length measuring function. The dimension measurement of the fine pattern is performed, for example, as described below. By controlling the electron lens systems 3 and 4 using the control device 26, the electron beam 1 scans the surface of the sample 2 and a secondary electron image of the surface of the sample 2 is displayed on the screen of the control / processing device 25. Start. In this case, the acceleration energy of the electron beam 1 may be 5 keV or less. It is possible to specify a fine pattern for dimension measurement based on this secondary electron image and obtain the pattern dimension from the deflection amount of the electron beam 1 or the movement amount of the stage 28.
【００５５】以上述べたように、本実施例では、残膜の
定性、定量分析に加え、残膜の形状観測や微細孔の寸法
測定も可能である。この結果、微細パタンに関してより
総合的な情報を得ることが可能である。As described above, in this embodiment, in addition to the qualitative and quantitative analysis of the residual film, it is possible to observe the shape of the residual film and measure the size of the fine pores. As a result, it is possible to obtain more comprehensive information regarding the fine pattern.
【００５６】以上、いくつかの実施例を用いて本発明を
説明した。より効果的にＸ線を検出するためには、光学
素子や検出器の位置を微調整する手段が必要である。こ
れらの調整手段は図示されていないが、必要に応じて位
置調整用微動機構を取付けることができるものとする。
ここで述べた実施例の組合せも本発明に含まれることは
言うまでもない。さらに、個々の実施例では述べなかっ
たが、Ｘ線の発生および検出に必要な手段の大部分は真
空中に設置されている。また、大気中の粒子によるＸ線
の吸収が少ない場合には、試料を低真空下に設置するこ
とも可能である。The present invention has been described above by using some embodiments. In order to detect X-rays more effectively, a means for finely adjusting the positions of optical elements and detectors is required. Although these adjusting means are not shown, a fine adjustment mechanism for position adjustment can be attached if necessary.
It goes without saying that combinations of the embodiments described here are also included in the present invention. Furthermore, although not mentioned in the individual examples, most of the means required for the generation and detection of X-rays are placed in a vacuum. Further, when the absorption of X-rays by particles in the air is small, the sample can be placed under a low vacuum.
【００５７】[0057]
【発明の効果】本発明によれば、収束した電子線を試料
表面に照射し、残膜から発生するＸ線を、電子線の近軸
方向から観測できる。このため、起伏の小さな試料はも
とより、起伏の大きな試料に対しても残膜の高精度定
性、定量分析が可能になる。さらに、非破壊分析である
ため、分析後の試料を製造プロセスに戻すことができ
る。According to the present invention, it is possible to irradiate the surface of a sample with a focused electron beam and observe the X-ray generated from the residual film from the paraxial direction of the electron beam. Therefore, it is possible to perform highly accurate qualitative and quantitative analysis of the residual film not only for a sample with a small undulation but also for a sample with a large undulation. Further, since it is a non-destructive analysis, the sample after analysis can be returned to the manufacturing process.
【図１】本発明の一実施例を示す装置構成図である。FIG. 1 is a device configuration diagram showing an embodiment of the present invention.
【図２】Ｘ線検出器の設置位置を説明する図である。FIG. 2 is a diagram illustrating an installation position of an X-ray detector.
【図３】本発明の一実施例を示す装置構成図である。FIG. 3 is a device configuration diagram showing an embodiment of the present invention.
【図４】本発明の一実施例を示す装置構成図である。FIG. 4 is a device configuration diagram showing an embodiment of the present invention.
【図５】本発明の一実施例を示す装置構成図である。FIG. 5 is a device configuration diagram showing an embodiment of the present invention.
【図６】本発明の一実施例を示す装置構成図である。FIG. 6 is a device configuration diagram showing an embodiment of the present invention.
【図７】本発明の一実施例を示す装置構成図である。FIG. 7 is a device configuration diagram showing an embodiment of the present invention.
【図８】コンタクトホールの断面を示す図である。FIG. 8 is a view showing a cross section of a contact hole.
【図９】Ｘ線強度のＳｉＯ2膜厚依存性を示す図であ
る。FIG. 9 is a diagram showing the SiO 2 film thickness dependence of X-ray intensity.
【図１０】本発明の一実施例を示す装置構成図である。FIG. 10 is a device configuration diagram showing an embodiment of the present invention.
【図１１】本発明の一実施例を示す装置構成図である。FIG. 11 is a device configuration diagram showing an embodiment of the present invention.
１…電子線、２…試料、３…対物レンズ、４…コンデン
サレンズ、５…Ｘ線、６、７…検出器、８…２次電子検
出器、９…ハウジング、１０…検出器、１１…穴、１２
…シリコン基板、１３…素子分離用絶縁膜、１４…ゲー
ト絶縁膜、１５…ゲート電極、１６…ソース／ドレイン
拡散層、１７…レジスト、１８…層間絶縁膜、１９、２
０…コンタクトホール、２１…下地材料削れ量評価用コ
ンタクトホール、２２…半導体レーザ、２３…電子源、
２４…コントローラ、２５…制御・処理装置、２６、３
２…制御装置、２７…電子検出器、２８…試料ステー
ジ、２９、３０…真空チャンバ、３１…排気系。1 ... Electron beam, 2 ... Sample, 3 ... Objective lens, 4 ... Condenser lens, 5 ... X-ray, 6, 7 ... Detector, 8 ... Secondary electron detector, 9 ... Housing, 10 ... Detector, 11 ... Hole, 12
... Silicon substrate, 13 ... Element isolation insulating film, 14 ... Gate insulating film, 15 ... Gate electrode, 16 ... Source / drain diffusion layer, 17 ... Resist, 18 ... Interlayer insulating film, 19, 2
0 ... Contact hole, 21 ... Contact hole for evaluating ground material scraping amount, 22 ... Semiconductor laser, 23 ... Electron source,
24 ... Controller, 25 ... Control / processing device, 26, 3
2 ... Control device, 27 ... Electron detector, 28 ... Sample stage, 29, 30 ... Vacuum chamber, 31 ... Exhaust system.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒田 勝広 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 西田 高 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 戸所 秀男 茨城県勝田市市毛882番地 株式会社日立 製作所計測器事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuhiro Kuroda 1-280, Higashi Koikekubo, Kokubunji City, Tokyo, Central Research Laboratory, Hitachi, Ltd. (72) Inventor Takashi Nishida 1-280, Higashi Koikekubo, Kokubunji City, Tokyo Hitachi, Ltd. Central Research Laboratory (72) Inventor Hideo Todokoro, 882, Ige, Katsuta-shi, Ibaraki Hitachi Instrument Co., Ltd.
Claims (36)
の長さを２ａ、深さをｄとした場合、ｔａｎ（ａ／ｄ）
＝θで定まる角度をθとすると、試料表面に加速、集束
した電子線を照射し、電子線照射により発生したＸ線を
電子線の中心軸からθの範囲内で定義される領域内で観
測する分析方法において、対物レンズ内部もしくはコン
デンサレンズ内部、もしくは対物レンズとコンデンサレ
ンズの間にＸ線検出器を設けて試料表面の残膜の定性、
定量分析を行うＸ線分析方法。1. When the diameter or the length of one side of a fine hole to be analyzed by X-ray is 2a and the depth is d, tan (a / d).
= Θ is the angle determined by = θ, the sample surface is irradiated with an accelerated and focused electron beam, and the X-rays generated by the electron beam irradiation are observed within the range defined by θ from the central axis of the electron beam. In the analysis method described above, an X-ray detector is provided inside the objective lens or inside the condenser lens, or between the objective lens and the condenser lens to determine the quality of the residual film on the sample surface,
An X-ray analysis method for quantitative analysis.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析方
法において、対物レンズとコンデンサレンズの間に、電
子線貫通孔を備えたＸ線検出器を設置して試料表面の残
膜の定性、定量分析を行うＸ線分析方法。2. An analysis method for irradiating a sample surface with an accelerated and focused electron beam, and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analysis method for qualitatively and quantitatively analyzing a residual film on a sample surface by installing an X-ray detector having an electron beam through hole between an objective lens and a condenser lens.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析方
法において、対物レンズの下にＸ線検出器を設けて試料
表面の残膜の定性、定量分析を行うＸ線分析方法。3. An analysis method for irradiating a sample surface with an accelerated and focused electron beam, and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analysis method in which an X-ray detector is provided under the objective lens to perform qualitative and quantitative analysis of the residual film on the sample surface.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析方
法において、対物レンズの下に、電子線貫通孔を備えた
Ｘ線検出器を設置して試料表面の残膜の定性、定量分析
を行うＸ線分析方法。4. An analysis method for irradiating a sample surface with an accelerated and focused electron beam and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analysis method in which an X-ray detector having an electron beam through hole is installed under the objective lens to perform qualitative and quantitative analysis of the residual film on the sample surface.
べき試料との比較試料のＸ線分析を行なった後に観察す
べき試料のＸ線分析を行なうことを特徴とする請求項１
〜４記載のＸ線分析方法。5. The X-ray analysis of the sample to be observed after the probe beam current measurement of the electron beam and the X-ray analysis of the sample to be compared with the sample to be observed.
X-ray analysis method according to 4 above.
し、電子線照射により発生したＸ線を観測する分析方法
において、上記電子線照射により発生した蛍光Ｘ線を電
子線の中心軸から２０度の範囲内で定義される領域内で
観測することで、試料表面の残膜の定性、定量分析を行
うことを特徴とする請求項１〜４記載のＸ線分析方法。6. An analytical method for irradiating a sample surface with an accelerated and focused electron beam and observing the X-ray generated by the electron beam irradiation, wherein the fluorescent X-ray generated by the electron beam irradiation is from the central axis of the electron beam. The X-ray analysis method according to claim 1, wherein qualitative and quantitative analysis of the residual film on the sample surface is performed by observing in a region defined within a range of 20 degrees.
を、電子線の照射中に加熱しながら分析を行う請求項１
〜６記載のＸ線分析方法。7. The analysis is performed while heating an area including an electron beam irradiation area on the sample surface during electron beam irradiation.
X-ray analysis method according to item 6.
を、電子線の照射中に１００℃以上の温度に加熱しなが
ら分析を行う請求項１〜６記載のＸ線分析方法。8. The X-ray analysis method according to claim 1, wherein the region including the electron beam irradiation region on the sample surface is analyzed while being heated to a temperature of 100 ° C. or higher during electron beam irradiation.
により行う請求項７、８記載のＸ線分析方法。9. The X-ray analysis method according to claim 7, wherein the heating is performed by focusing light on a region to be heated.
もしくは赤外光の集光により行う請求項７、８記載のＸ
線分析方法。10. The X according to claim 7, wherein the heating is performed by focusing visible light or infrared light on an area to be heated.
Line analysis method.
よび分析に必要な手段が、真空中に設置されていること
を特徴とする請求項１〜１０記載のＸ線分析方法。11. The X-ray analysis method according to claim 1, wherein at least means necessary for X-ray generation and analysis by electron beam irradiation are installed in a vacuum.
よび分析に必要な手段が、１×１０‐6ｔｏｒｒ以下の
真空中に設置されていることを特徴とする請求項１〜１
０記載のＸ線分析方法。12. At least the means required for X-ray generation and analysis by electron beam irradiation are installed in a vacuum of 1 × 10 −6 torr or less.
X-ray analysis method described in 0.
コン原子のうち少なくとも一つ以上を含む残膜である請
求項１〜４記載のＸ線分析方法。13. The X-ray analysis method according to claim 1, wherein the residual film is a residual film containing at least one of carbon atoms, oxygen atoms and silicon atoms.
酸素原子、シリコン原子のうち少なくとも一つ以上を励
起してＸ線の発生が可能なエネルギーである請求項１〜
４記載のＸ線分析方法。14. The energy of the electron beam is a carbon atom,
An energy that can generate X-rays by exciting at least one of oxygen atoms and silicon atoms.
4. The X-ray analysis method described in 4.
である請求項１〜４記載のＸ線分析方法。15. The X-ray analysis method according to claim 1, wherein the electron beam has an energy of 5 keV or less.
光Ｘ線のエネルギーの１０倍以内である請求項１〜４記
載のＸ線分析方法。16. The X-ray analysis method according to claim 1, wherein the energy of the electron beam is within 10 times the energy of the fluorescent X-ray to be observed.
辺の長さを２ａ、深さをｄとした場合、ｔａｎ（ａ／
ｄ）＝θで定まる角度をθとすると、試料表面に加速、
集束した電子線を照射し、電子線照射により発生したＸ
線を電子線の中心軸からθの範囲内で定義される領域内
で観測する分析装置において、対物レンズ内部もしくは
コンデンサレンズ内部、もしくは対物レンズとコンデン
サレンズの間にＸ線検出器を設けたことを特徴とする試
料表面の残膜の定性、定量分析が可能なＸ線分析装置。17. When the diameter or the length of one side of the fine pores to be analyzed by X-ray is 2a and the depth is d, tan (a /
d) = θ, where θ is the angle defined by
Irradiate a focused electron beam and generate X by electron beam irradiation
An X-ray detector is provided inside the objective lens or inside the condenser lens, or between the objective lens and the condenser lens, in an analyzer that observes the rays within a range defined by θ from the central axis of the electron beam. An X-ray analyzer capable of qualitative and quantitative analysis of the residual film on the sample surface.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析装
置において、対物レンズとコンデンサレンズの間に、電
子線貫通孔を備えたＸ線検出器を設けたことを特徴とす
る試料表面の残膜の定性、定量分析が可能なＸ線分析装
置。18. An analyzer for irradiating a sample surface with an accelerated and focused electron beam and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analyzer capable of qualitative and quantitative analysis of a residual film on a sample surface, which is provided with an X-ray detector having an electron beam through hole between an objective lens and a condenser lens.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析装
置において、対物レンズの下にＸ線検出器を設けたこと
を特徴とする試料表面の残膜の定性、定量分析が可能な
Ｘ線分析装置。19. An analyzer for irradiating a sample surface with an accelerated and focused electron beam, and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analyzer capable of qualitative and quantitative analysis of a residual film on a sample surface, which is provided with an X-ray detector under the objective lens.
し、電子線照射により発生したＸ線を電子線の中心軸か
ら前記θの範囲内で定義される領域内で観測する分析装
置において、対物レンズの下に、電子線貫通孔を備えた
Ｘ線検出器を設けたことを特徴とする試料表面の残膜の
定性、定量分析が可能なＸ線分析装置。20. An analyzer for irradiating a sample surface with an accelerated and focused electron beam and observing X-rays generated by the electron beam irradiation within a region defined within the range of θ from the central axis of the electron beam. An X-ray analyzer capable of qualitative and quantitative analysis of a residual film on a sample surface, which is provided with an X-ray detector having an electron beam through hole under an objective lens.
観察すべき試料との比較試料のＸ線分析手段、および観
察すべき試料のＸ線分析手段を備えたことを特徴とする
請求項１７〜２０記載のＸ線分析装置。21. An electron beam probe beam current measuring means,
21. The X-ray analysis apparatus according to claim 17, further comprising an X-ray analysis means for comparing the sample with the sample to be observed and an X-ray analysis means for the sample to be observed.
し、電子線照射により発生したＸ線を観測する分析方法
において、上記電子線照射により発生したＸ線を電子線
の中心軸から２０度の範囲内で定義される領域内で観測
可能な観測手段を備えた、試料表面の残膜の定性、定量
分析が可能な請求項１７〜２０記載のＸ線分析装置。22. An analysis method of irradiating a sample surface with an accelerated and focused electron beam and observing the X-ray generated by the electron beam irradiation, wherein the X-ray generated by the electron beam irradiation is 20 from a central axis of the electron beam. 21. The X-ray analysis apparatus according to claim 17, which is capable of qualitative and quantitative analysis of the residual film on the sample surface, which is provided with an observing means capable of observing in a region defined within a range of degrees.
域を、電子線の照射中に加熱しながら分析を行う請求項
１７〜２０記載のＸ線分析装置。23. The X-ray analysis apparatus according to claim 17, wherein the region including the electron beam irradiation region on the sample surface is analyzed while being heated during the electron beam irradiation.
域を、電子線の照射中に１００℃以上の温度に加熱しな
がら分析を行う請求項１７〜２０記載のＸ線分析装置。24. The X-ray analysis apparatus according to claim 17, wherein the region including the electron beam irradiation region on the sample surface is analyzed while being heated to a temperature of 100 ° C. or higher during the electron beam irradiation.
光により行う請求項２３、２４記載のＸ線分析装置。25. The X-ray analysis apparatus according to claim 23, wherein the heating is performed by focusing light on an area to be heated.
もしくは赤外光の集光により行う請求項２３、２４記載
のＸ線分析装置。26. The X-ray analysis apparatus according to claim 23, wherein the heating is performed by focusing visible light or infrared light on a region to be heated.
よび分析に必要な手段が、真空中に設置されていること
を特徴とする請求項１７〜２６記載のＸ線分析装置。27. An X-ray analysis apparatus according to claim 17, wherein at least means necessary for X-ray generation and analysis by electron beam irradiation are installed in a vacuum.
よび分析に必要な手段が、１×１０‐6ｔｏｒｒ以下の
真空中に設置されていることを特徴とする請求項１７〜
２６記載のＸ線分析装置。28. At least the means required for X-ray generation and analysis by electron beam irradiation are installed in a vacuum of 1 × 10 −6 torr or less.
26. The X-ray analyzer according to item 26.
コン原子のうち少なくとも一つ以上を含む残膜である請
求項１７〜２０記載のＸ線分析装置。29. The X-ray analysis apparatus according to claim 17, wherein the residual film is a residual film containing at least one of carbon atoms, oxygen atoms and silicon atoms.
酸素原子、シリコン原子のうち少なくとも一つ以上を励
起してＸ線の発生が可能なエネルギーである請求項１７
〜２０記載のＸ線分析装置。30. The energy of the electron beam is a carbon atom,
18. Energy that can generate X-rays by exciting at least one of oxygen atoms and silicon atoms.
X-ray analyzer according to 20.
である請求項１７〜２０記載のＸ線分析装置。31. The X-ray analyzer according to claim 17, wherein the electron beam has an energy of 5 keV or less.
線のエネルギーの１０倍以内である請求項１７〜２０記
載のＸ線分析装置。32. The energy of the electron beam is X to be observed.
21. The X-ray analyzer according to claim 17, wherein the energy of the rays is within 10 times.
によりウェハ表面上の残膜の定性、定量分析を行うこと
により製造された半導体素子。33. A semiconductor device manufactured by qualitatively and quantitatively analyzing a residual film on a wafer surface by the means according to any one of claims 1 to 4.
行うことにより製造された半導体素子において、ウェハ
表面上に残膜分析を行うための領域を設けたことを特徴
とする請求項３３記載の半導体素子。34. A semiconductor device manufactured by performing qualitative and quantitative analysis of a residual film on a wafer surface, wherein a region for performing the residual film analysis is provided on the wafer surface. The semiconductor device described.
行うことにより製造された半導体素子において、ウェハ
表面上に残膜分析を行うための孔パターンを設けたこと
を特徴とする請求項３３記載の半導体素子。35. A semiconductor device manufactured by performing qualitative and quantitative analysis of a residual film on a wafer surface, wherein a hole pattern for performing the residual film analysis is provided on the wafer surface. 33. The semiconductor device according to 33.
をもとに異なる照射位置間の距離を測定、計算する手段
を備えた請求項１７〜３２記載のＸ線分析装置。36. The X-ray analysis apparatus according to claim 17, further comprising: an electron beam irradiation position measuring means; and a means for measuring and calculating a distance between different irradiation positions based on the irradiation positions.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091034A JPH07294460A (en) | 1994-04-28 | 1994-04-28 | X-ray analytical method and device |
| KR1019950009294A KR950033478A (en) | 1994-04-28 | 1995-04-20 | X-ray analysis method and device |
| US08/430,535 US5594246A (en) | 1994-04-11 | 1995-04-25 | Method and apparatus for x-ray analyses |
| DE19515574A DE19515574A1 (en) | 1994-04-28 | 1995-04-27 | X=ray analysis method e.g. for one Gigabyte DRAM mfr. |
| US08/893,034 US5877498A (en) | 1992-09-28 | 1997-07-15 | Method and apparatus for X-ray analyses |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091034A JPH07294460A (en) | 1994-04-28 | 1994-04-28 | X-ray analytical method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07294460A true JPH07294460A (en) | 1995-11-10 |
Family
ID=14015231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6091034A Pending JPH07294460A (en) | 1992-09-28 | 1994-04-28 | X-ray analytical method and device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07294460A (en) |
| KR (1) | KR950033478A (en) |
| DE (1) | DE19515574A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012098113A (en) * | 2010-11-01 | 2012-05-24 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| JPWO2013084904A1 (en) * | 2011-12-09 | 2015-04-27 | 株式会社堀場製作所 | X-ray analyzer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09329557A (en) * | 1996-06-11 | 1997-12-22 | Seiko Instr Inc | Fluorescent x-ray microanalyzer |
| DE19737569A1 (en) * | 1997-08-28 | 1998-02-26 | Olaf Sommer Inst Fuer Festkoer | Apparatus for determining depth distribution of particles in matrix using X=ray |
| DE102010056321B9 (en) * | 2010-12-27 | 2018-03-22 | Carl Zeiss Microscopy Gmbh | Particle beam microscope |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8100449A (en) * | 1981-01-30 | 1982-08-16 | Philips Nv | ELECTRON MICROSCOPE WITH ROENTGEND DETECTOR. |
| US5481109A (en) * | 1992-09-28 | 1996-01-02 | Hitachi, Ltd. | Surface analysis method and apparatus for carrying out the same |
-
1994
- 1994-04-28 JP JP6091034A patent/JPH07294460A/en active Pending
-
1995
- 1995-04-20 KR KR1019950009294A patent/KR950033478A/en not_active Application Discontinuation
- 1995-04-27 DE DE19515574A patent/DE19515574A1/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012098113A (en) * | 2010-11-01 | 2012-05-24 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| JPWO2013084904A1 (en) * | 2011-12-09 | 2015-04-27 | 株式会社堀場製作所 | X-ray analyzer |
| JP2017201313A (en) * | 2011-12-09 | 2017-11-09 | 株式会社堀場製作所 | X-ray analyzer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950033478A (en) | 1995-12-26 |
| DE19515574A1 (en) | 1995-11-02 |
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