JP2996210B2 - Sample absorption current spectroscopy - Google Patents
Sample absorption current spectroscopyInfo
- Publication number
- JP2996210B2 JP2996210B2 JP9228457A JP22845797A JP2996210B2 JP 2996210 B2 JP2996210 B2 JP 2996210B2 JP 9228457 A JP9228457 A JP 9228457A JP 22845797 A JP22845797 A JP 22845797A JP 2996210 B2 JP2996210 B2 JP 2996210B2
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- JP
- Japan
- Prior art keywords
- sample
- electron beam
- energy
- change
- irradiating
- Prior art date
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は表面分析技術に関
し、電子線を加速エネルギーを変化させて試料表面に照
射することで試料に発生する吸収電流を測定し、試料の
表面に付着している、あるいは試料表面に含まれている
元素を分析する方法及びその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface analysis technique, which measures an absorption current generated in a sample by irradiating an electron beam to a sample surface while changing acceleration energy, and adheres to the surface of the sample. Alternatively, the present invention relates to a method and an apparatus for analyzing elements contained in a sample surface.
【０００２】[0002]
【従来の技術】表面および表面上に付着した物質の元素
分析の従来法としては、電子線を照射しオージェ電子励
起現象により放出された電子をエネルギー分析するオー
ジェ電子分光法（ＡＥＳ）や、Ｘ線を照射し光電子放出
による電子をエネルギー分析するＸ線光電子分光法（Ｘ
ＰＳまたはＥＳＣＡ）、電子線を照射し特性Ｘ線放出に
よるＸ線の波長分析をするＥＰＭＡ、電子線を照射し非
弾性散乱された電子のエネルギーを分析する電子線エネ
ルギー損失分光（ＥＬＳ）、イオンビームを照射し発生
する２次イオン量を質量分析する２次イオン質量分析法
（ＳＩＭＳ）などがある。これら全ての測定手法は電子
線やイオンビーム、Ｘ線等を試料に照射し、放出あるい
は散乱される電子、イオンあるいはＸ線を検出する手法
である。2. Description of the Related Art Conventional methods for elemental analysis of a surface and a substance attached to the surface include Auger electron spectroscopy (AES) in which an electron beam is irradiated and electrons emitted by an Auger electron excitation phenomenon are subjected to energy analysis. X-ray photoelectron spectroscopy (X
PS or ESCA), EPMA for irradiating an electron beam and analyzing the wavelength of X-rays by characteristic X-ray emission, electron beam energy loss spectroscopy (ELS) for irradiating an electron beam and analyzing the energy of inelastically scattered electrons, ions There is a secondary ion mass spectrometry (SIMS) for mass analysis of the amount of secondary ions generated by irradiation with a beam. All of these measurement methods irradiate a sample with an electron beam, an ion beam, X-rays, or the like, and detect emitted, scattered electrons, ions, or X-rays.
【０００３】[0003]
【発明が解決しようとする課題】最近の集積度が非常に
高い半導体素子においては、その製造工程の途中段階で
半導体素子表面上に垂直に細長い深い穴をつくる場合が
しばしばある。ところが、この穴の縦横比が非常に大き
い場合、従来の元素分析手法では表面に対し電子、イオ
ン、あるいはＸ線の入射してくる方向と、検出する電
子、イオンあるいはＸ線の出射する方向をほとんど同じ
方向にする必要があり、装置の構造上、この穴の底の元
素分析が、非常に困難であった。In recent semiconductor devices having a very high degree of integration, a vertically elongated deep hole is often formed on the surface of the semiconductor device in the middle of the manufacturing process. However, when the aspect ratio of the hole is very large, the conventional elemental analysis method determines the direction in which electrons, ions, or X-rays enter the surface and the direction in which the detected electrons, ions, or X-rays exit. The orientations should be almost the same, and the elemental analysis at the bottom of this hole was very difficult due to the structure of the device.
【０００４】本発明はこの問題を考慮し、この細長い穴
の底の元素分析を行うことを目的としている。The present invention has been made in view of this problem, and has as its object to perform elemental analysis of the bottom of the elongated hole.
【０００５】[0005]
【課題を解決するための手段】本発明の分析方法は、試
料表面に電子線を照射して、その電子線の加速エネルギ
ーを変化させ、試料表面から裏面に流れ込む電流の照射
電子線エネルギーに対する変化を計測することで、試料
表面上に付着あるいは試料表面に含まれる元素を分析す
ることを特徴とする。According to the analysis method of the present invention, a sample surface is irradiated with an electron beam, the acceleration energy of the electron beam is changed, and the current flowing from the sample surface to the back surface is changed with respect to the irradiation electron beam energy. Is characterized by analyzing elements that adhere to the sample surface or are contained in the sample surface.
【０００６】本発明の試料表面上に付着するあるいは試
料表面に含まれる元素の分布を分析する方法は、電子レ
ンズで集束させた電子線を、試料表面上の局所的な領域
に照射あるいは電子線照射位置を走査しながら照射し、
その電子線の加速エネルギーを変化させ、試料表面から
裏面に流れ込む電流の照射電子線エネルギーに対する変
化を計測することで、試料表面上に付着あるいは試料表
面に含まれる元素の分布を測定することを特徴とする。According to the method of the present invention for analyzing the distribution of elements adhering to or contained in a sample surface, a method of irradiating an electron beam focused by an electron lens on a local region on the sample surface or electron beam. Irradiation while scanning the irradiation position,
Changing the acceleration energy of the electron beam from the sample surface
By measuring a change with respect to the irradiation electron beam energy of a current flowing into the back surface, and measuring the distribution of elements contained in the attachment or the surface of the sample on the sample surface.
【０００７】本発明の試料表面上に付着あるいは試料表
面に含まれる元素の分析装置は、試料表面に加速エネル
ギーを変化させながら電子線を照射するための手段と、
電子線照射時に試料表面から裏面に流れ込む電流の照射
電子線エネルギーに対する変化を計測する手段とを有す
ることを特徴とする。According to the present invention, there is provided a device for analyzing an element adhered on or contained in a sample surface, comprising means for irradiating the sample surface with an electron beam while changing acceleration energy.
Means for measuring a change in the current flowing from the front surface to the back surface of the sample during irradiation with the electron beam energy.
【０００８】本発明の試料吸収電流の測定方法は、電子
線を試料に照射して、試料に流れ込む試料吸収電流を検
出する方法において、照射する電子線に加速エネルギー
を周期的に変化させ、その周期と同じ周期の試料吸収電
流変化分を、試料表面から裏面に流れる電流の変化分と
して検出することを特徴とする。The method of measuring a sample absorption current according to the present invention is a method of irradiating a sample with an electron beam and detecting the sample absorption current flowing into the sample. The change in the sample absorption current in the same cycle as the cycle is calculated as the change in the current flowing from the sample front to the back.
And detecting it.
【０００９】本発明の試料吸収電流の測定装置は、電子
線を試料に照射して、試料に流れ込む試料吸収電流を検
出する装置において、電子線をその加速エネルギーを周
期的に変化させて試料に照射する手段と、この加速エネ
ルギーの変化の周期と同じ周期の試料吸収電流変化分
を、試料表面から裏面に流れる電流の変化分として検出
するための手段とを有することを特徴とする。A sample absorption current measuring apparatus according to the present invention is an apparatus for irradiating a sample with an electron beam and detecting the sample absorption current flowing into the sample. Irradiation means and sample absorption current change in the same cycle as the change in acceleration energy
And means for detecting a change in the current flowing from the front surface to the back surface of the sample .
【００１０】本発明においては、試料に電子線が照射さ
れ、その照射によって試料に流れる試料吸収電流を試料
裏面側で測定し、得られた測定値から試料表面に付着し
ている、あるいは試料表面に含まれている元素の分析が
行われる。このため、試料表面に対して電子線が照射さ
れて来る方向に検出器を用いる必要が無いため、非常に
細長い穴の底、すなわち凹部の底部表面の分析も可能で
ある。In the present invention, a sample is irradiated with an electron beam, and the sample absorption current flowing through the sample due to the irradiation is measured.
The measurement is performed on the back surface side, and the element attached to the sample surface or contained in the sample surface is analyzed based on the obtained measurement value. For this reason, there is no need to use a detector in the direction in which the sample surface is irradiated with the electron beam, so that the bottom of a very elongated hole , that is, the bottom surface of a concave portion can be analyzed.
【００１１】[0011]
【発明の実施の形態】本発明では、検出しようとする元
素の内殻準位結合エネルギーと同程度のエネルギーに加
速した電子線を照射し、その内殻電子を真空準位以上に
励起することで試料吸収電流を変化させる。具体的に
は、例えば入射する電子のエネルギーを変化させそのと
きの試料吸収電流の変化を測定すると、内殻準位結合エ
ネルギーより入射電子のエネルギーが低い場合、内殻電
子は励起されても真空準位より低いエネルギーにしか成
り得ないが、内殻準位結合エネルギーより高いエネルギ
ーの場合、内殻電子は励起され真空準位より高いエネル
ギーになるため、真空中に放出される。このため、試料
吸収電流は入射電子のエネルギーが内殻準位結合エネル
ギーを越える際に大きな変化が生じる。内殻準位結合エ
ネルギーは元素によって大きく違うエネルギー値である
ため、照射する電子のエネルギーを変化させ、この試料
吸収電流が急に変化するエネルギーを調べることで、そ
の元素分析を行うことが可能である。また、集束させた
電子線を用いて試料表面上を走査させながら、この試料
吸収電流を測定することで元素の２次元の分布を調べる
ことが出来る。さらに、短時間で決まった元素の２次元
分布を調べる場合は、集束した入射電子線のエネルギー
をその元素の内殻準位結合エネルギーに固定して電子線
を走査し、試料吸収電流を計ることによってその分析が
可能である。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, an electron beam accelerated to the same energy as the core level binding energy of an element to be detected is irradiated, and the core electrons are excited to a vacuum level or higher. Changes the sample absorption current. Specifically, for example, when the energy of the incident electrons is changed and the change in the sample absorption current at that time is measured, when the energy of the incident electrons is lower than the inner-level binding energy, the inner-shell electrons are excited and the vacuum is obtained. Although the energy can only be lower than the energy level, but the energy is higher than the core level binding energy, the core electrons are excited and become higher in energy than the vacuum level, so that they are emitted into the vacuum. For this reason, a large change occurs in the sample absorption current when the energy of the incident electrons exceeds the core level binding energy. Since the core level binding energy varies greatly depending on the element, the elemental analysis can be performed by changing the energy of the irradiated electrons and examining the energy at which the sample absorption current changes abruptly. is there. The two-dimensional distribution of elements can be examined by measuring the sample absorption current while scanning the surface of the sample using the focused electron beam. Furthermore, when examining the two-dimensional distribution of an element determined in a short time, fix the energy of the focused incident electron beam to the core state binding energy of the element and scan the electron beam to measure the sample absorption current. Analysis is possible.
【００１２】本発明では電子銃から放出した電子線を試
料の目的の場所に照射する。本発明おける分析装置の概
略を示したものが図１である。この装置は電子線照射手
段としての電子銃１及び電子銃１からの電子線の加速エ
ネルギーを変化させるための可変電圧源４と、試料２の
内部に流れ込む試料吸収電流を測定するための電流検出
器３とを有して構成されたものである。In the present invention, an electron beam emitted from an electron gun is applied to a target location on a sample. FIG. 1 schematically shows an analyzer according to the present invention. This apparatus includes an electron gun 1 as an electron beam irradiation means and a variable voltage source 4 for changing the acceleration energy of the electron beam from the electron gun 1 and a current detection for measuring a sample absorption current flowing into the sample 2. And a container 3.
【００１３】この装置における測定は、電子銃１から試
料２の表面に可変電圧源４からの電圧を変化させて加速
エネルギーを変化させながら電子線を照射する。この加
速エネルギーの変化に応じて、分析対象の元素が試料２
の表面に存在すれば、上述した原理に従って電流検出器
３で検出される電流に変化が生じ、分析対象の元素に特
有の電流変化を測定することで該元素の存在を検出する
ことができる。In the measurement in this apparatus, an electron beam is irradiated from the electron gun 1 to the surface of the sample 2 while changing the acceleration energy by changing the voltage from the variable voltage source 4. According to the change in the acceleration energy, the element to be analyzed is changed to the sample 2
If the element exists on the surface, a change occurs in the current detected by the current detector 3 in accordance with the above-described principle, and the presence of the element to be analyzed can be detected by measuring a current change specific to the element to be analyzed.
【００１４】試料表面上の特定の箇所だけ測定する場
合、電子銃により照射する電子線を電子レンズ等の制御
系で集束し、その特定箇所に照射し、照射する電子の加
速エネルギーを変化させ、そのエネルギー変化に対する
試料吸収電流の変動を測定する。照射する電子の加速エ
ネルギーは検出しようとする元素の内殻準位結合エネル
ギーを含む範囲で変化させる。When measuring only a specific location on the sample surface, the electron beam to be irradiated by the electron gun is focused by a control system such as an electron lens, is irradiated to the specific location, and the acceleration energy of the irradiated electron is changed. The fluctuation of the sample absorption current with respect to the energy change is measured. The acceleration energy of the irradiated electron is changed within a range including the core level binding energy of the element to be detected.
【００１５】一方、表面上の２次元的な元素の空間分布
を調べる場合には、電子レンズにより照射する電子線を
集束し、その電子線を調べたい範囲で走査して測定す
る。なお、電子線の走査系は、公知の構成のものを用い
ることができる。このような空間分布を測定するための
装置の一例を図２に示す。図２の装置は、図１の装置に
電子レンズ５を追加した構成を有するものである。On the other hand, when examining the two-dimensional spatial distribution of elements on the surface, an electron beam to be irradiated by an electron lens is focused, and the electron beam is scanned and measured in a desired range. The electron beam scanning system may have a known configuration. FIG. 2 shows an example of an apparatus for measuring such a spatial distribution. The device of FIG. 2 has a configuration in which an electron lens 5 is added to the device of FIG.
【００１６】この装置における測定での電子線走査の各
点で、入射電子の加速エネルギーを変化させ、その変化
に対する試料吸収電流の変動を測定する。この各点にお
ける試料吸収電流の大きく変化するエネルギーとその変
化量を調べることで、この測定データから２次元的な元
素の分布（空間分布）を調べることができる。At each point of electron beam scanning in the measurement in this apparatus, the acceleration energy of incident electrons is changed, and the fluctuation of the sample absorption current with respect to the change is measured. By examining the energy at which the sample absorption current greatly changes at each point and the amount of the change, the two-dimensional element distribution (spatial distribution) can be examined from the measured data.
【００１７】また、短時間で特定の元素について表面上
の２次元的な量の空間分布を調べる場合、電子レンズに
より照射する電子線を集束し、その電子線の加速エネル
ギーを目的の元素の内殻準位結合エネルギーの近くで、
例えば測定対象の元素の内殻準位結合エネルギーを含む
範囲、すなわち内殻準位結合エネルギーよりも低いエネ
ルギーから内殻準位結合エネルギーよりも高いエネルギ
ーの間を周期的に変動させ、調べたい範囲で走査して測
定する。このような目的に用い得る装置の一例を図３に
示す。図３の装置は、正弦波発生器６によって走査の各
点で、電子線の加速エネルギーを目的の元素の内殻準位
結合エネルギーの近くで周期的に変動させ、ロックイン
アンプ７において照射する電子線のエネルギー変化と同
じ周波数の試料吸収電流の変動成分を検出して、出力信
号８として取り出す。この各走査点における試料吸収電
流の変動信号の大きさから、その元素の２次元的な量の
空間分布を調べることができる。Further, when examining the spatial distribution of a two-dimensional amount of a specific element on the surface in a short time, the electron beam to be irradiated is focused by an electron lens, and the acceleration energy of the electron beam is converted into the target element. Near the shell level binding energy,
For example, a range that includes the inner-level binding energy of the element to be measured, that is, a range in which the energy is periodically varied from an energy lower than the inner-level binding energy to an energy that is higher than the inner-level binding energy. Scan and measure. FIG. 3 shows an example of an apparatus that can be used for such a purpose. In the apparatus shown in FIG. 3, the sine wave generator 6 periodically fluctuates the acceleration energy of the electron beam near the core-level binding energy of the target element at each point of scanning, and irradiates the same in the lock-in amplifier 7. A fluctuation component of the sample absorption current at the same frequency as the energy change of the electron beam is detected and extracted as an output signal 8. From the magnitude of the fluctuation signal of the sample absorption current at each scanning point, the spatial distribution of the two-dimensional quantity of the element can be examined.
【００１８】[0018]
実施例１ ダイナミックランダムアクセスメモリ（ＤＲＡＭ）用ト
レンチ構造をもつシリコン半導体基板上の直径０．３５
μｍ、深さ５μｍの円筒状の穴の底に基板表面垂直方向
から集束した電子線を照射し、そのときの試料吸収電流
を測定することでその部分の組成分析を行った（図
４）。照射した電子線の加速エネルギーは１ｋｅＶから
３ｋｅＶの範囲で変化させて行い、ビーム径は０．２５
μｍ程度であった。その結果、試料吸収電流は入射電子
線のエネルギーが１８４０ｅＶ程度のエネルギーで大き
く変化する様子が観測された。この１８４０ｅＶの信号
はシリコンの１ｓ軌道の内殻準位結合エネルギーに相当
する。このことから、穴の底の表面部の元素の主成分は
シリコンであることが判る。 実施例２ 実施例１と同じＤＲＡＭ用トレンチ構造をもつシリコン
半導体基板上に、表面垂直方向から約３０°ずれた方向
から、厚さ０．０５μｍ程度のタングステン膜をスパッ
タ法によって成膜した（図５）。この試料を実施例１と
同様、基板表面垂直方向から集束した電子線を照射し、
そのときの試料吸収電流を測定することでその部分の組
成分析を行った。この実験では、電子線を走査する各点
で電子線の加速エネルギーを１ｋｅＶから３ｋｅＶまで
変化させながら、試料吸収電流の変化を観測した。その
結果、基板表面上の穴以外の部分では、入射する電子線
のエネルギーが２８２０ｅＶ、２５７５ｅＶ、２２８０
ｅＶ、１８７０ｅＶおよび１８１０ｅＶのエネルギーで
試料吸収電流に大きな変化が見られ、穴の部分では１８
４０ｅＶのエネルギーで試料吸収電流に大きな変化が見
られた。これらのうち、２８２０ｅＶ、２５７５ｅＶ、
２２８０ｅＶ、１８７０ｅＶおよび１８１０ｅＶの信号
はタングステンの３ｓ、３ｐ、３ｄの内殻準位結合エネ
ルギーに相当し、穴以外の基板表面部にはタングステン
が多く存在し、一方、穴の底の表面部にはシリコンが多
く存在することを示す。Example 1 A diameter of 0.35 on a silicon semiconductor substrate having a trench structure for a dynamic random access memory (DRAM)
The bottom of a cylindrical hole having a depth of 5 μm and a depth of 5 μm was irradiated with a focused electron beam from a direction perpendicular to the substrate surface, and the sample absorption current at that time was measured to analyze the composition of that portion (FIG. 4). The acceleration energy of the irradiated electron beam was changed in the range of 1 keV to 3 keV, and the beam diameter was 0.25.
It was about μm. As a result, it was observed that the sample absorption current greatly changed when the energy of the incident electron beam was about 1840 eV. This 1840 eV signal corresponds to the core level binding energy of the 1s orbit of silicon. From this, it is understood that the main component of the element on the surface portion at the bottom of the hole is silicon. Example 2 On a silicon semiconductor substrate having the same trench structure for a DRAM as in Example 1, a tungsten film having a thickness of about 0.05 μm was formed by a sputtering method from a direction shifted by about 30 ° from a direction perpendicular to the surface (FIG. 5). This sample was irradiated with an electron beam focused from the direction perpendicular to the substrate surface as in Example 1,
By measuring the sample absorption current at that time, the composition of that portion was analyzed. In this experiment, the change in the sample absorption current was observed while changing the acceleration energy of the electron beam from 1 keV to 3 keV at each point where the electron beam was scanned. As a result, in portions other than the holes on the substrate surface, the energy of the incident electron beam is 2820 eV, 2575 eV, 2280 eV.
At the energies of eV, 1870 eV, and 1810 eV, a large change was observed in the sample absorption current.
At an energy of 40 eV, a large change was observed in the sample absorption current. Of these, 2820 eV, 2575 eV,
The signals of 2280 eV, 1870 eV and 1810 eV correspond to the inner-shell binding energies of 3s, 3p and 3d of tungsten, and there is much tungsten on the surface of the substrate other than the holes, while the surface at the bottom of the holes is Indicates that silicon is abundant.
【００１９】実施例３ 実施例と同じＤＲＡＭ用トレンチ構造をもつシリコン半
導体基板上に、厚さ２００Åの薄膜を金を蒸着し、表面
垂直方向から約４５°ずれた方向からアルゴンイオンに
よるスパッタを行った（図６）。この試料を上記の実験
と同様、基板表面垂直方向から集束した電子線を照射
し、そのときの試料吸収電流を測定することでその部分
の組成分析を行った。この実験では、電子線を走査する
各点で電子線の加速エネルギーを１ｋｅＶから３ｋｅＶ
まで変化させながら、試料吸収電流の変化を観測した。
その結果、基板表面上の穴の部分では、入射する電子線
のエネルギーが２７４０ｅＶ、２２９０ｅＶおよび２２
１０ｅＶのエネルギーで試料吸収電流に大きな変化が見
られ、穴以外の部分では１８４０ｅＶのエネルギーで試
料吸収電流に大きな変化が見られた。これらのうち、２
７４０ｅＶ、２２９０ｅＶおよび２２１０ｃＶの信号は
金の３ｐ、３ｄの内殻準位結合エネルギーに相当し、穴
の底の表面部には金が多く存在し、一方、穴以外の基板
表面部にはシリコンが多く存在することを示す。Embodiment 3 A thin film having a thickness of 200.degree. Is deposited on a silicon semiconductor substrate having the same trench structure for a DRAM as in the embodiment and gold is sputtered by argon ions from a direction shifted from the surface perpendicular direction by about 45.degree. (FIG. 6). The sample was irradiated with an electron beam focused from the direction perpendicular to the surface of the substrate, and the sample absorption current at that time was measured to analyze the composition of that portion, as in the above experiment. In this experiment, the acceleration energy of the electron beam was changed from 1 keV to 3 keV at each point where the electron beam was scanned.
The change in the sample absorption current was observed while changing the current.
As a result, in the hole portion on the substrate surface, the energy of the incident electron beam is 2740 eV, 2290 eV and 22 kV.
A large change was observed in the sample absorption current at an energy of 10 eV, and a large change was observed in a portion other than the hole at an energy of 1840 eV. Of these, two
The signals of 740 eV, 2290 eV and 2210 cV correspond to the core-level binding energies of 3p and 3d of gold, and there is a lot of gold on the surface at the bottom of the hole, while silicon is on the surface of the substrate other than the hole. Indicates that there are many.
【００２０】[0020]
【発明の効果】本発明により、半導体素子上に作製され
た縦横比の大きな細く深い穴の底の元素分析が可能であ
る。According to the present invention, it is possible to perform elemental analysis on the bottom of a thin and deep hole having a large aspect ratio and formed on a semiconductor device.
【図１】試料吸収電流分光装置の概略図である。FIG. 1 is a schematic diagram of a sample absorption current spectrometer.
【図２】局所分析を行うための試料吸収電流分光装置の
概略図である。FIG. 2 is a schematic diagram of a sample absorption current spectrometer for performing local analysis.
【図３】高速で局所分析を行うための試料吸収電流分光
装置の概略図である。FIG. 3 is a schematic view of a sample absorption current spectrometer for performing local analysis at high speed.
【図４】トレンチ構造をもつ半導体試料の測定の概略図
と、試料の拡大した断面図である。FIG. 4 is a schematic diagram of a measurement of a semiconductor sample having a trench structure and an enlarged cross-sectional view of the sample.
【図５】スパッタ法によってタングステン膜を製膜した
トレンチ構造試料の断面図である。FIG. 5 is a sectional view of a trench structure sample in which a tungsten film is formed by a sputtering method.
【図６】蒸着法によって金の薄膜を製膜し、アルゴンイ
オンスパッタ法によって表面を研磨したトレンチ構造試
料の断面図である。FIG. 6 is a cross-sectional view of a trench structure sample in which a gold thin film is formed by a vapor deposition method and the surface is polished by an argon ion sputtering method.
１ 電子銃 ２ 試料 ３ 電流検出器 ４ 可変電圧源 ５ 電子レンズ ６ 正弦波発生器 ７ ロックインアンプ ８ 出力信号 ９ トレンチ構造をもつ半導体試料 １０ トレンチの溝の部分 １１ 製膜されたタングステン膜 １２ 金蒸着膜 REFERENCE SIGNS LIST 1 electron gun 2 sample 3 current detector 4 variable voltage source 5 electron lens 6 sine wave generator 7 lock-in amplifier 8 output signal 9 semiconductor sample having trench structure 10 groove portion of trench 11 formed tungsten film 12 gold Evaporated film
Claims (10)
線の加速エネルギーを変化させ、試料表面から裏面に流
れ込む電流の照射電子線エネルギーに対する変化を計測
することで、試料表面上に付着あるいは試料表面に含ま
れる元素を分析することを特徴とする分析法。An electron beam is irradiated on the surface of a sample, the acceleration energy of the electron beam is changed, and the change of the current flowing from the surface of the sample to the back surface with respect to the irradiated electron beam energy is measured. An analysis method characterized by analyzing elements attached to or contained in a sample surface.
れた電子線であり、前記試料表面の局所的な領域に電子
線を照射する請求項１に記載の分析法。2. The analysis method according to claim 1, wherein the electron beam is an electron beam focused using an electron lens, and the local region on the sample surface is irradiated with the electron beam.
表面上の局所的な領域に照射あるいは電子線照射位置を
走査しながら照射し、その電子線の加速エネルギーを変
化させ、試料表面から裏面に流れ込む電流の照射電子線
エネルギーに対する変化を計測することで、試料表面上
に付着あるいは試料表面に含まれる元素の分布を測定す
ることを特徴とする測定法。3. An electron beam focused by an electron lens is irradiated onto a local region on a sample surface or irradiated while scanning an electron beam irradiation position, and the acceleration energy of the electron beam is changed to change the electron beam from the sample surface. By measuring the change in the current flowing into the back surface with respect to the irradiation electron beam energy, the distribution of elements attached to the sample surface or contained in the sample surface can be measured.
Measurement method characterized by that.
の底部を含む請求項２または３に記載の方法。 4. A concave portion in which the local region is on a sample surface.
A method according to claim 2 or 3, comprising a bottom of
素の内殻準位結合エネルギーを含む範囲で周期的に変化
させる請求項１〜４のいずれかに記載の方法。5. The method according to claim 1, periodically changing the acceleration energy of the electron beam in a range including a core level binding energy of an element to be measured.
がら電子線を照射するための手段と、電子線照射時に試
料表面から裏面に流れ込む電流の照射電子線エネルギー
に対する変化を計測する手段とを有することを特徴とす
る試料表面上に付着あるいは試料表面に含まれる元素の
分析装置。6. A device for irradiating an electron beam while changing the acceleration energy on the surface of a sample, and a device for measuring a change in current flowing from the surface of the sample to the back surface of the sample during irradiation with the electron beam with respect to the irradiation electron beam energy. An analyzer for an element attached to or contained on a sample surface.
させた電子線を試料表面上の局所的な領域に照射あるい
は電子線照射位置を走査しながら照射するための電子線
制御系とを有する請求項６に記載の分析装置。7. An electron lens for focusing an electron beam, and an electron beam control system for irradiating the focused electron beam to a local region on the sample surface or irradiating the focused electron beam while scanning an electron beam irradiation position. An analyzer according to claim 6 .
元素の内殻準位結合エネルギーを含む範囲で周期的に変
化させる請求項６または７に記載の分析装置。8. The acceleration energy of the electron beam, spectrometer according to claim 6 or 7 periodically varied in a range including a core level binding energy of an element to be measured.
む試料吸収電流を検出する方法において、照射する電子
線の加速エネルギーを周期的に変化させ、その周期と同
じ周期の試料吸収電流変化分を、試料表面から裏面に流
れる電流の変化分として検出することを特徴とする試料
吸収電流の測定方法。9. A method for irradiating a sample with an electron beam and detecting a sample absorption current flowing into the sample, wherein the acceleration energy of the irradiating electron beam is periodically changed, and a change in the sample absorption current having the same cycle as the cycle is obtained. Flow from the sample front to the back.
A method for measuring a sample absorption current, which is detected as a change in a current flowing through the sample.
込む試料吸収電流を検出する装置において、電子線をそ
の加速エネルギーを周期的に変化させて試料に照射する
手段と、この加速エネルギーの変化の周期と同じ周期の
試料吸収電流変化分を、試料表面から裏面に流れる電流
の変化分として検出するための手段とを有することを特
徴とする測定装置。10. A device for irradiating a sample with an electron beam and detecting a sample absorption current flowing into the sample, means for irradiating the sample with the electron beam by periodically changing its acceleration energy, The current flowing from the sample front surface to the back surface by the sample absorption current change of the same cycle as the change cycle
A means for detecting the change in the measurement value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9228457A JP2996210B2 (en) | 1997-08-25 | 1997-08-25 | Sample absorption current spectroscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9228457A JP2996210B2 (en) | 1997-08-25 | 1997-08-25 | Sample absorption current spectroscopy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1167857A JPH1167857A (en) | 1999-03-09 |
| JP2996210B2 true JP2996210B2 (en) | 1999-12-27 |
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ID=16876797
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|---|---|---|---|
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|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002216697A (en) * | 2001-01-17 | 2002-08-02 | Horon:Kk | Inspecting device |
| JP4738610B2 (en) * | 2001-03-02 | 2011-08-03 | 株式会社トプコン | Contamination evaluation method for substrate surface, contamination evaluation apparatus and semiconductor device manufacturing method |
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1997
- 1997-08-25 JP JP9228457A patent/JP2996210B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH1167857A (en) | 1999-03-09 |
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