JPH0728003B2 - Thin film hybrid IC - Google Patents
Thin film hybrid ICInfo
- Publication number
- JPH0728003B2 JPH0728003B2 JP61266902A JP26690286A JPH0728003B2 JP H0728003 B2 JPH0728003 B2 JP H0728003B2 JP 61266902 A JP61266902 A JP 61266902A JP 26690286 A JP26690286 A JP 26690286A JP H0728003 B2 JPH0728003 B2 JP H0728003B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film hybrid
- piezoelectric
- hybrid
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はシリコンなどの同一絶縁基板上に能動素子（I
C,トランジスタ，ダイオードなど）や受動素子（抵抗，
コンデンサなど）やZnO（酸化亜鉛）などの圧電薄膜に
よるダイヤフラム形複合薄膜共振子を形成した混成集積
回路に関する。Description: INDUSTRIAL APPLICABILITY The present invention relates to active devices (I) on the same insulating substrate such as silicon.
C, transistor, diode, etc. and passive elements (resistor,
This invention relates to a hybrid integrated circuit in which a diaphragm-type composite thin film resonator is formed by a piezoelectric thin film such as a capacitor) or ZnO (zinc oxide).
従来の技術 従来の技術を用いた薄膜ハイブリッドICではたとえば第
２図に示したように能動素子21（IC,トランジスタ，ダ
イオードなど）や受動素子22,23（抵抗，コンデンサな
ど）や圧電共振子24などをそれぞれ別々のチップ上に形
成し、それらをガラスやアルミなどの絶縁基板26上に配
置し、ワイヤボンディングなどの手法を用いて配線パタ
ーンと接続して発振回路や増幅回路を形成していた。2. Description of the Related Art In a thin film hybrid IC using the conventional technology, for example, as shown in FIG. 2, active elements 21 (ICs, transistors, diodes, etc.), passive elements 22, 23 (resistors, capacitors, etc.), and piezoelectric resonators 24 Etc. are formed on separate chips, respectively, and they are arranged on an insulating substrate 26 such as glass or aluminum, and are connected to a wiring pattern by a method such as wire bonding to form an oscillation circuit or an amplification circuit. .
発明が解決しようとする問題点 このような従来の回路では構成が複雑であり、能動素
子，受動素子，共振子などをそれぞれ別個に製作すると
いうことで工程数が多くかかり、また別々の素子を組み
合わせることによって寄生インピーダンスを発生するな
どして精度的にもやや劣る面があった。そこで本発明に
おいては従来からある半導体集積回路形成技術を十分に
生かすために圧電薄膜を能動素子，受動素子と同一基板
上に半導体集積回路を形成するのと同じ工程内で形成す
ることとし、作業工程数の削減と形成される電気回路の
精度の向上，信頼性の向上を目的としている。また、各
素子との接続は多層膜形成技術を用いてさらに軽薄短小
化をはかるものとする。Problems to be Solved by the Invention In such a conventional circuit, the configuration is complicated, and since the active element, the passive element, the resonator, and the like are separately manufactured, the number of steps is large, and separate elements are required. There is a side inferior in accuracy, such as generating parasitic impedance by combining them. Therefore, in the present invention, in order to make full use of the conventional semiconductor integrated circuit forming technique, the piezoelectric thin film is formed in the same process as forming the semiconductor integrated circuit on the same substrate as the active element and the passive element. The purpose is to reduce the number of processes, improve the accuracy of the electric circuit to be formed, and improve the reliability. In addition, the connection with each element shall be made lighter, thinner, shorter and smaller by using a multilayer film forming technique.
問題点を解決するための手段 本発明の一実施例の概略の構成を示すものとして第１図
があるが、この構成図でわかるようにZnO（酸化亜鉛）
圧電薄膜を用いたダイヤフラム形複合共振子を採用して
いる。この実施例でわかるようにシリコン・ウェハ（基
板）17上にSiO2（二酸化珪素）15,ZnO（酸化亜鉛）を形
成するという従来の半導体集積回路形成技術をそのまま
活用できる。このようにして従来の問題点を解決しよう
としたものである。FIG. 1 shows a schematic configuration of one embodiment of the present invention. As can be seen from this configuration diagram, ZnO (zinc oxide) is used.
A diaphragm type composite resonator using a piezoelectric thin film is adopted. As can be seen from this embodiment, the conventional semiconductor integrated circuit forming technique of forming SiO 2 (silicon dioxide) 15 and ZnO (zinc oxide) on a silicon wafer (substrate) 17 can be used as it is. In this way, the conventional problems are solved.
作用 以上の構成により、作業工程数の削減と形成される電気
回路の精度の向上，信頼性の向上をはかり、また、各素
子との接続は多層膜形成技術を用いてさらに軽薄短小化
がはかれた。With the above configuration, the number of working steps can be reduced, the accuracy of the electric circuit to be formed can be improved, the reliability can be improved, and the connection with each element can be made lighter, thinner, smaller and smaller by using the multilayer film forming technology. I was burned.
実施例 上述のように第１図は本発明の一実施例の構成を示す図
である。第１図において11,12,13は一般的な半導体集積
回路の製法によって作られるトランジスタ11、抵抗12、
コンデンサ13である。その製法はシリコン・ウェハ17を
エピタキシャル成長させて不純物をドープすることによ
ってP+層，Nmo層などを形成し、表面を酸化してSiO
2（二酸化珪素）15をつけ、ホトエッチング法，選択拡
散法を用いてトランジスタであればエミッタ層などを形
成していく。抵抗12,コンデンサ13などもトランジスタ1
1などを形成する過程で作ることが可能である。さて、
圧電共振子14についてであるが、これも基板はシリコン
・ウェハ17を用い、酸化膜(SiO2)15を利用してその上に
圧電膜16を形成する。ここで酸化膜15は圧電膜（ZnOな
ど）の温度係数を相殺することができるという利点があ
り、低温度係数の実現が可能である。各素子間の接続は
多層膜形成の際利用されるスルーホール，ビアホール技
術を用いて多層的に行い、ワイヤボンディング法などの
接続技術を不用とし、薄型化，小型化をねらっている。
また、第１図で構成したような薄膜ハイブリッドICの応
用展開として第３図はラジオのFM受信機の概念的なブロ
ック図を示したものである。このブロック図の中で主に
発振回路や増幅回路への適用がはかれ、現在ある小型の
薄型ラジオなどよりもさらに小型，軽量化が可能であ
る。Embodiment As described above, FIG. 1 is a diagram showing the construction of an embodiment of the present invention. In FIG. 1, reference numerals 11, 12, and 13 denote a transistor 11, a resistor 12, and a resistor 12, which are manufactured by a general semiconductor integrated circuit manufacturing method.
The capacitor 13. The manufacturing method is to epitaxially grow a silicon wafer 17 and dope impurities to form P + layers, N mo layers, etc., and oxidize the surface to form SiO 2.
2 (Silicon dioxide) 15 is attached, and if it is a transistor, the emitter layer and the like are formed by using the photoetching method and the selective diffusion method. Resistor 12, capacitor 13, etc. are also transistors 1
It can be made in the process of forming 1. Now,
As for the piezoelectric resonator 14, a silicon wafer 17 is also used as a substrate, and an oxide film (SiO 2 ) 15 is used to form a piezoelectric film 16 thereon. Here, the oxide film 15 has an advantage that it can offset the temperature coefficient of the piezoelectric film (ZnO or the like), and a low temperature coefficient can be realized. Connection between each element is made in multiple layers by using the through-hole and via-hole technology used when forming a multilayer film, and connection technology such as the wire bonding method is not required, aiming at thinning and miniaturization.
Further, as an application development of the thin film hybrid IC as constructed in FIG. 1, FIG. 3 shows a conceptual block diagram of a radio FM receiver. In this block diagram, it is mainly applied to the oscillation circuit and the amplification circuit, and can be made smaller and lighter than the existing small thin radios.
発明の効果 以上述べてきたように本発明によれば、ラジオやテレ
ビ，オーディオなどといった民生用、無線機，通信機，
交換機といった通信・工業用など、この発明の適用分野
は広範囲に及ぶ。本発明によれば高精度，高信頼性で軽
薄短小化のはかれる電気回路が形成できる。EFFECTS OF THE INVENTION As described above, according to the present invention, consumer products such as radios, televisions, and audios, wireless devices, communication devices,
The field of application of the present invention covers a wide range, such as communication and industrial applications such as exchanges. According to the present invention, it is possible to form an electric circuit that is highly accurate, highly reliable, and is light, thin, short, and compact.
第１図は本発明による薄膜ハイブリッドICの一実施例に
おける構成図、第２図は従来の薄膜ハイブリッドICの一
実施例における構成図、第３図は本発明を適用できるラ
ジオのFM受信機の概念的なブロック図である。 11……トランジスタ、12……抵抗、13……コンデンサ、
14……圧電共振子、15……SiO2（二酸化珪素）、16……
圧電体（酸化亜鉛）、17……シリコン・ウェハ、18……
空孔、21……ICチップ、22……抵抗チップ、23……コン
デンサ・チップ、24……圧電共振子、25……配線シー
ト、26……絶縁基板。FIG. 1 is a block diagram of an embodiment of a thin film hybrid IC according to the present invention, FIG. 2 is a block diagram of an embodiment of a conventional thin film hybrid IC, and FIG. 3 is a radio FM receiver to which the present invention can be applied. It is a conceptual block diagram. 11 …… transistor, 12 …… resistor, 13 …… capacitor,
14 …… Piezoelectric resonator, 15 …… SiO 2 (silicon dioxide), 16 ……
Piezoelectric body (zinc oxide), 17 ... Silicon wafer, 18 ...
Holes, 21 ... IC chips, 22 ... Resistance chips, 23 ... Capacitor chips, 24 ... Piezoelectric resonators, 25 ... Wiring sheets, 26 ... Insulating substrates.
Claims (1)
イヤフラム形複合薄膜共振子を構成し、前記各素子との
接続は多層膜形成技術により結合をはかり、電気回路を
形成したことを特徴とする薄膜ハイブリッドIC。1. An active element, a passive element, and a diaphragm type composite thin film resonator are formed on the same insulating substrate, and the connection with each of the elements is made by a multilayer film forming technique to form an electric circuit. Thin film hybrid IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266902A JPH0728003B2 (en) | 1986-11-10 | 1986-11-10 | Thin film hybrid IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266902A JPH0728003B2 (en) | 1986-11-10 | 1986-11-10 | Thin film hybrid IC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63120481A JPS63120481A (en) | 1988-05-24 |
| JPH0728003B2 true JPH0728003B2 (en) | 1995-03-29 |
Family
ID=17437245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61266902A Expired - Lifetime JPH0728003B2 (en) | 1986-11-10 | 1986-11-10 | Thin film hybrid IC |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0728003B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0279194U (en) * | 1988-12-06 | 1990-06-18 | ||
| JP4744849B2 (en) * | 2004-11-11 | 2011-08-10 | 株式会社東芝 | Semiconductor device |
| US8816567B2 (en) | 2011-07-19 | 2014-08-26 | Qualcomm Mems Technologies, Inc. | Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58184753A (en) * | 1982-04-23 | 1983-10-28 | Clarion Co Ltd | Composite semiconductor device |
| JPS6068710A (en) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | Piezoelectric thin film resonator |
| JPS6074671A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Hybrid ic device |
| JPS61127217A (en) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | Piezoelectric thin film resonator |
-
1986
- 1986-11-10 JP JP61266902A patent/JPH0728003B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63120481A (en) | 1988-05-24 |
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