JPH07277864A - High-temperature heat resistant member - Google Patents
High-temperature heat resistant memberInfo
- Publication number
- JPH07277864A JPH07277864A JP7474694A JP7474694A JPH07277864A JP H07277864 A JPH07277864 A JP H07277864A JP 7474694 A JP7474694 A JP 7474694A JP 7474694 A JP7474694 A JP 7474694A JP H07277864 A JPH07277864 A JP H07277864A
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- silicon
- single crystal
- silicon carbide
- temperature heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
- C04B41/5096—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高温耐熱性部材に関
し、特に半導体単結晶製造をするための装置に用いられ
る高温耐熱性部材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high temperature heat resistant member, and more particularly to a high temperature heat resistant member used in an apparatus for producing a semiconductor single crystal.
【０００２】[0002]
【従来の技術】単結晶の引上げ装置は、一般的に、図１
に示すような構成である。図１に示す装置１は、主にシ
リコン溶融のための構造体が収容される加熱チャンバ２
ａと引き上げられるシリコン結晶体Ｓを収納する引き上
げチャンバ２ｂが分離機構２０により分離、接続が可能
なように接続されたチャンバ２を有し、加熱チャンバ２
ａ内には、るつぼ５と、このるつぼ５の主に側面部を取
り囲むように配置された加熱ヒータ６とが設けられてい
る。るつぼ５にはこの加熱ヒータ６によって溶融された
シリコンが収容される。このるつぼ５は、図示されてい
ない駆動装置と回転軸４によって接続され、この駆動装
置によって所定の速度で回転される。通常、るつぼ５
は、石英るつぼ５ａとこれを保護する黒鉛製るつぼ５ｂ
とから構成されている。また、加熱ヒータ６の加熱チャ
ンバ２ａ側には断熱部材１１が設けられているが、これ
は、加熱ヒータ６からの熱が加熱チャンバ２ａ外部に逃
げるのを防止するためである。2. Description of the Related Art A single crystal pulling apparatus is generally shown in FIG.
The configuration is as shown in. The apparatus 1 shown in FIG. 1 comprises a heating chamber 2 in which a structure mainly for melting silicon is housed.
a and the pulling chamber 2b for containing the silicon crystal S to be pulled have a chamber 2 connected so that they can be separated and connected by the separating mechanism 20, and the heating chamber 2
A crucible 5 and a heater 6 arranged so as to mainly surround the side surface of the crucible 5 are provided in a. The crucible 5 contains the silicon melted by the heater 6. The crucible 5 is connected to a driving device (not shown) by a rotary shaft 4, and is rotated at a predetermined speed by the driving device. Usually a crucible 5
Is a quartz crucible 5a and a graphite crucible 5b for protecting it.
It consists of and. Further, a heat insulating member 11 is provided on the heating chamber 2a side of the heating heater 6 to prevent heat from the heating heater 6 from escaping to the outside of the heating chamber 2a.
【０００３】一方、引き上げチャンバ２ｂ内には、頂壁
を挿通して垂下された引き上げワイヤ７が設けられ、こ
の引き上げワイヤ７の下端には種結晶８を保持するチャ
ック９が設けられている。この引き上げワイヤ７の上端
側は、ワイヤ巻上機１０に巻回されており、シリコン結
晶体Ｓを所定の速度で引き上げるようになっている。そ
して、チャンバ２内には、引き上げチャンバ２ｂに形成
されたガス導入口１２からアルゴンガスが導入され、加
熱チャンバ２ａ内をまんべんなく流通してガス流出口１
３から排出される。このようにアルゴンガスを流通させ
るのは、シリコンの溶融に伴ってチャンバ２内に発生す
るＳｉＯをシリコン融液内に混入させないようにするた
めである。On the other hand, inside the pulling chamber 2b, a pulling wire 7 which is hung down through the top wall is provided, and a chuck 9 for holding a seed crystal 8 is provided at the lower end of the pulling wire 7. The upper end side of the pulling wire 7 is wound around the wire hoisting machine 10 to pull up the silicon crystal body S at a predetermined speed. Then, the argon gas is introduced into the chamber 2 from the gas introduction port 12 formed in the pulling chamber 2b, and the argon gas is evenly distributed in the heating chamber 2a and the gas outlet 1
Emitted from 3. The reason why the argon gas is circulated in this way is to prevent the SiO generated in the chamber 2 due to the melting of silicon from being mixed into the silicon melt.
【０００４】上述のように構成された単結晶引上げ装置
の黒鉛製るつぼ５ｂや断熱部材１１等として、黒鉛が用
いられているが、シリコン単結晶引上げ装置にあって
は、単結晶体の原料であるシリコン融液中のＳｉと石英
製のるつぼから出るＯによって装置内部にＳｉＯが生
じ、このＳｉＯと黒鉛のＣが反応して黒鉛部材そのもの
が消耗したり、この黒鉛部材の消耗によって生じたＣＯ
がシリコン融液中に混入することにより単結晶の品質を
低下させるなどの問題があった。Graphite is used as the graphite crucible 5b and the heat insulating member 11 of the single crystal pulling apparatus constructed as described above, but in the silicon single crystal pulling apparatus, it is a raw material of a single crystal body. Si in a silicon melt and O emitted from a quartz crucible generate SiO in the inside of the apparatus, and the SiO reacts with C of graphite to consume the graphite member itself or CO generated by the consumption of the graphite member.
However, there is a problem in that the quality of the single crystal is deteriorated by being mixed in the silicon melt.
【０００５】このような黒鉛の消耗やＣＯの発生を防ぐ
ための方法として、特公昭５９−１４９，５９３号公報
では黒鉛製部材にＣＶＤ法により黒鉛部材表面をＳｉＣ
により被覆する方法が、また、特開昭６２−１１３，７
８２号公報には黒鉛を金属やセラミックスで被覆する方
法等が開示されている。As a method for preventing such consumption of graphite and generation of CO, Japanese Patent Publication No. 59-149,593 discloses a graphite member whose surface is covered with SiC by a CVD method.
The method of coating according to JP-A-62-113,7 is also known.
Japanese Patent Publication No. 82 discloses a method of coating graphite with metal or ceramics.
【０００６】しかしながら、内部が１１００〜１６００
℃と言った単結晶引上げ装置の内部では、高温のために
ＳｉＣも下式に示すような反応が生じて、ＳｉＣが消耗
してＣＯの発生を完全に防止することができない。 ＳｉＣ＋ＳｉＯ→２Ｓｉ＋ＣＯ↑ 一方、金属を黒鉛に被覆した場合には、高融点金属と言
えどもこの金属自体は高温により少なからず蒸発するた
め、シリコン単結晶に混入する恐れがあり、同様にセラ
ミックス等もその組成物中の成分が蒸発したり、ＳｉＯ
と反応して生じた反応生成物が単結晶中に混入する等、
超高純度の品質が求められる単結晶の品質低下をもたら
し、単結晶引上げ装置に用いることは好ましくない。However, the inside is 1100 to 1600.
In the inside of the single crystal pulling apparatus such as ℃, due to the high temperature, SiC also undergoes a reaction as shown in the following formula, so that SiC is consumed and CO cannot be completely prevented from being generated. SiC + SiO → 2Si + CO ↑ On the other hand, when a metal is coated with graphite, even if it is a refractory metal, the metal itself will evaporate to a large extent due to high temperature, and therefore it may be mixed in the silicon single crystal. The components in the composition evaporate, and SiO
The reaction product generated by reacting with is mixed in the single crystal,
It is not preferable to use it in a single crystal pulling apparatus because it causes deterioration of the quality of the single crystal which requires ultra-high purity quality.
【０００７】[0007]
【発明が解決しようとする課題】そこで、本発明の目的
は、内部が高温の装置、特に単結晶引上げ装置内部に用
いられる黒鉛または炭化ケイ素等のＳｉＯとの反応によ
る消耗を防止し、黒鉛または炭化ケイ素部材の長寿命化
を図り、かつ引き上げられる単結晶の品質低下を防止す
ることである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to prevent the consumption of graphite or silicon carbide, which is used in the inside of a high temperature apparatus, especially a single crystal pulling apparatus, by the reaction with SiO. It is intended to extend the life of the silicon carbide member and prevent the quality of the pulled single crystal from being deteriorated.
【０００８】[0008]
【課題を解決するための手段】上記諸目的は、黒鉛また
は炭化ケイ素の表面をシリコンにより被覆したことを特
徴とする高温耐熱性部材により達成される。The above objects can be achieved by a high temperature heat resistant member characterized in that the surface of graphite or silicon carbide is coated with silicon.
【０００９】[0009]
【作用】本発明による高温耐熱性部材は、黒鉛または炭
化ケイ素の表面をシリコンによって被覆することによ
り、単結晶体の原料であるシリコン融液中のＳｉと石英
製のるつぼから出るＯによって装置内部に生じるＳｉＯ
と黒鉛または炭化ケイ素中のＣと反応することがなくな
り、黒鉛または炭化ケイ素部材の消耗を防止することが
でき、かつこの黒鉛または炭化ケイ素部材の消耗によっ
て生じるＣＯの発生も防止することができるため、高純
度の単結晶の製造が可能となる。In the high temperature heat resistant member according to the present invention, by coating the surface of graphite or silicon carbide with silicon, Si in the silicon melt, which is the raw material of the single crystal, and O coming out of the quartz crucible are used for the inside of the apparatus. Generated in SiO
Since it does not react with C in graphite or silicon carbide, consumption of the graphite or silicon carbide member can be prevented, and generation of CO caused by consumption of the graphite or silicon carbide member can be prevented. Therefore, it becomes possible to manufacture a high-purity single crystal.
【００１０】[0010]
【実施例】以下、本発明を実施例により詳細に説明す
る。EXAMPLES The present invention will be described in detail below with reference to examples.
【００１１】本発明の高温耐熱性部材の形成は、基材と
して黒鉛を焼成もしくは焼成後の黒鉛材料の削り出し等
により所望の形に形成するか、または形成後の黒鉛材料
またはその他の金属等により形成された金属材等の表面
に炭化ケイ素を被覆したものを用いる。この所望の形に
形成した黒鉛または炭化ケイ素基材表面をＣＶＤ法や溶
射形成によりシリコン（Ｓｉ）膜により被覆する。この
シリコン膜は、多結晶状でもアモルファス状でも特に限
定されるものではないが、このとき被覆するシリコン膜
の厚みは１０００μｍ以下、好ましくは３００μｍ程度
とする。この厚みが１０００μｍを越えると黒鉛と被覆
したシリコン膜との熱膨張の違いによりシリコン膜に割
れやひびが入り、そこからシリコンが脱落したり、黒鉛
がのぞきＳｉＯと反応する等して好ましくなく、一方１
００μｍ未満であると、シリコン厚が薄すぎるためにシ
リコンでの被覆率が良くなく、黒鉛中のＣがＳｉＯと反
応して好ましくない。The high temperature heat-resistant member of the present invention is formed by firing graphite as a base material or shaving the graphite material after firing to obtain a desired shape, or the formed graphite material or other metal. The surface of the metal material or the like formed by is coated with silicon carbide is used. The surface of the graphite or silicon carbide substrate formed in this desired shape is covered with a silicon (Si) film by the CVD method or thermal spraying. The silicon film is not particularly limited to polycrystal or amorphous, but the thickness of the silicon film to be coated at this time is 1000 μm or less, preferably about 300 μm. If this thickness exceeds 1000 μm, the silicon film may be cracked or cracked due to the difference in thermal expansion between the graphite and the coated silicon film, silicon may drop off from the silicon film, or the graphite may react with the peeping SiO. While 1
When the thickness is less than 00 μm, the coverage of silicon is not good because the silicon thickness is too thin, and C in the graphite reacts with SiO, which is not preferable.
【００１２】上述のようにして形成された本発明の高温
耐熱性部材は、単結晶引上げ装置において、装置内部の
高温に晒される部分に用いられる。具体的には例えば図
１に示したような単結晶引上げ装置内部のるつぼ５ｂ、
断熱部材１１、加熱ヒータ６、さらに、図示してはいな
いが、引上げ中の単結晶体Ｓを取り囲むように形成され
る単結晶体Ｓの冷却用熱遮蔽板等である。The high temperature heat resistant member of the present invention formed as described above is used in a portion of a single crystal pulling apparatus exposed to a high temperature inside the apparatus. Specifically, for example, the crucible 5b inside the single crystal pulling apparatus as shown in FIG.
The heat insulating member 11, the heater 6, and a heat shield plate for cooling the single crystal S, which is formed so as to surround the single crystal S being pulled, are also provided, although not shown.
【００１３】上述のように本発明の高温耐熱性部材をシ
リコン単結晶引上げ装置に用いた場合、高温での装置内
部のＳｉＯと基材である黒鉛または炭化ケイ素のＣとの
反応を完全に防止することができるため、基材である黒
鉛または炭化ケイ素の消耗を防止し、これら黒鉛または
炭化ケイ素製部材の長寿命化を図り、かつ、これら黒鉛
または炭化ケイ素中のＣが製品に混入するのを防止する
ことができるため、より高純度のシリコン単結晶体を製
造することができる。As described above, when the high temperature heat resistant member of the present invention is used in a silicon single crystal pulling apparatus, the reaction between SiO inside the apparatus and C of the base material graphite or silicon carbide is completely prevented at high temperature. Therefore, the consumption of graphite or silicon carbide as a base material is prevented, the life of these graphite or silicon carbide members is extended, and C in the graphite or silicon carbide is mixed in the product. Since this can be prevented, a higher purity silicon single crystal body can be manufactured.
【００１４】また、本発明の高温耐熱性部材は、単結晶
引上げ装置に用いられる以外に、例えば光ファイバー製
造装置、液晶ディスプレイ用硝子材製造装置、レンズ用
硝子製造装置、半導体素子製造に用いられる熱酸化およ
び熱拡散炉等のように、装置内部が高温となり、しかも
製造されるものにＳｉを含有し高純度の品質が要求され
るような製造装置において、これまで黒鉛や炭化ケイ素
等が用いられているような部材に代り好適に使用するこ
とができる。Further, the high temperature heat resistant member of the present invention is used not only in a single crystal pulling apparatus but also in an optical fiber manufacturing apparatus, a glass material manufacturing apparatus for liquid crystal displays, a glass manufacturing apparatus for lenses, a semiconductor element manufacturing apparatus. Graphite, silicon carbide, etc. have been used up to now in manufacturing equipment such as oxidation and thermal diffusion furnaces where the inside of the equipment has a high temperature and the manufactured material contains Si and requires high-purity quality. It can be suitably used in place of the member described above.
【００１５】[0015]
【発明の効果】以上説明したように、本発明の高温耐熱
性部材は、基材である黒鉛または炭化ケイ素のＣの消耗
を完全に防止することができるため、これら黒鉛または
炭化ケイ素製部材の長寿命化を図り、かつ、これら黒鉛
または炭化ケイ素中のＣが製品に混入し、製品の汚染や
純度の低下を防止することができ、より高純度の製品を
製造することができる。As described above, the high temperature heat resistant member of the present invention can completely prevent the consumption of C of graphite or silicon carbide as the base material, and therefore, the high temperature heat resistant member of the graphite or silicon carbide member can be used. It is possible to prolong the service life, prevent carbon in the graphite or silicon carbide from being mixed into the product, and prevent the product from being contaminated or the purity from being lowered, so that a product with higher purity can be manufactured.
【図１】 単結晶引上げ装置の一例を説明するための図
面である。FIG. 1 is a drawing for explaining an example of a single crystal pulling apparatus.
１…単結晶引上げ装置、 ２…チャンバ、 ２ａ…加熱チャンバ、 ２ｂ…引上げチャンバ、 ４…回転軸、 ５…るつぼ、 ５ａ…石英るつぼ、 ５ｂ…黒鉛るつぼ、 ６…加熱ヒータ、 ７…ワイヤ、 ９…チャック、 １０…ワイヤ巻上機、 １１…断熱部材、 １２…ガス導入口、 １３…ガス排出口、 ２０…分離機構。 DESCRIPTION OF SYMBOLS 1 ... Single-crystal pulling apparatus, 2 ... Chamber, 2a ... Heating chamber, 2b ... Pulling chamber, 4 ... Rotating shaft, 5 ... Crucible, 5a ... Quartz crucible, 5b ... Graphite crucible, 6 ... Heating heater, 7 ... Wire, 9 ... Chuck, 10 ... Wire hoisting machine, 11 ... Insulating member, 12 ... Gas inlet, 13 ... Gas outlet, 20 ... Separation mechanism.
Claims (1)
により被覆したことを特徴とする高温耐熱性部材。1. A high temperature heat-resistant member, characterized in that the surface of graphite or silicon carbide is coated with silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7474694A JPH07277864A (en) | 1994-04-13 | 1994-04-13 | High-temperature heat resistant member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7474694A JPH07277864A (en) | 1994-04-13 | 1994-04-13 | High-temperature heat resistant member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07277864A true JPH07277864A (en) | 1995-10-24 |
Family
ID=13556132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7474694A Pending JPH07277864A (en) | 1994-04-13 | 1994-04-13 | High-temperature heat resistant member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07277864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112899772A (en) * | 2019-11-19 | 2021-06-04 | Ｆｔｂ研究所株式会社 | Single crystal growth apparatus, method of using the same, and single crystal |
-
1994
- 1994-04-13 JP JP7474694A patent/JPH07277864A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112899772A (en) * | 2019-11-19 | 2021-06-04 | Ｆｔｂ研究所株式会社 | Single crystal growth apparatus, method of using the same, and single crystal |
| CN112899772B (en) * | 2019-11-19 | 2024-04-05 | Ｆｔｂ研究所株式会社 | Single crystal growth apparatus, method for using the same, and single crystal |
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