JP2580198B2 - Single crystal pulling device - Google Patents
Single crystal pulling deviceInfo
- Publication number
- JP2580198B2 JP2580198B2 JP62256759A JP25675987A JP2580198B2 JP 2580198 B2 JP2580198 B2 JP 2580198B2 JP 62256759 A JP62256759 A JP 62256759A JP 25675987 A JP25675987 A JP 25675987A JP 2580198 B2 JP2580198 B2 JP 2580198B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- reflector
- melt
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、チョクラルスキー法によって単結晶を引上
げ成長させる単結晶引上装置に関する。Description: TECHNICAL FIELD The present invention relates to a single crystal pulling apparatus for pulling and growing a single crystal by the Czochralski method.
従来、この種の単結晶引上装置としては、ルツボの縁
から外方へ突出している上部の平たい環状リムと、この
環状リムに取付けられ、内側に縁から円筒形状に下方に
傾斜しているまたは円錐状に先細りになっている連結部
とからなるカバー装置によって、ルツボとルツボ内に含
まれる半導体溶融物とを部分的に被覆するものが知られ
ている（特公昭57-40119号公報参照）。Conventionally, this type of single crystal pulling apparatus includes a flat annular rim that protrudes outward from an edge of a crucible, and is attached to the annular rim, and is inclined downward in a cylindrical shape from the edge inside. Alternatively, a crucible and a semiconductor melt contained in the crucible are partially covered with a cover device comprising a conical tapered connecting portion (see Japanese Patent Publication No. 57-40119). ).
このカバー装置は、露出したルツボの壁面からの熱の
放射を反射することによって単結晶棒を保護するもの
で、この温度遮蔽により、高い引上速度が可能になった
というものである。This cover device protects the single crystal rod by reflecting the heat radiation from the exposed wall surface of the crucible, and this temperature shield enables a high pulling speed.
しかしながら、上記単結晶引上装置においては、装置
上部から装置内に導入された不活性ガスは、全量がカバ
ー連結部の端縁と単結晶棒との間隙を通過した後、半導
体溶融物の融液面上を通って、融液から発生した一酸化
ケイ素（SiO）を伴ってルツボ外に排出されるものであ
るが、カバーの平たい環状リムの下面部において、融液
から蒸発発生した一酸化ケイ素の凝縮が起こり、固体化
した粒子が溶融物表面に落下して単結晶化を阻害すると
いう問題がある。However, in the single crystal pulling apparatus, the entire amount of the inert gas introduced into the apparatus from the top of the apparatus passes through the gap between the edge of the cover connecting portion and the single crystal rod, and then melts the semiconductor melt. It is discharged out of the crucible along with the silicon monoxide (SiO) generated from the melt through the liquid surface. However, on the lower surface of the flat annular rim of the cover, the monoxide generated from the melt is evaporated. There is a problem that silicon is condensed and solidified particles fall on the surface of the melt to hinder single crystallization.
また、ルツボの内周壁部付近の溶融物表面が上記環状
リムによって覆われているから、外部からその状況が観
察できず、ルツボの上端が熱変形していたり、ルツボの
内周壁近傍に再結晶やシリコン付着などの不具合が発生
しても、迅速に対応できないという問題もある。In addition, since the surface of the melt near the inner peripheral wall of the crucible is covered with the annular rim, the situation cannot be observed from the outside, and the upper end of the crucible is thermally deformed or recrystallized near the inner peripheral wall of the crucible. There is also a problem that even if a problem such as adhesion of silicon or silicon occurs, it cannot be promptly dealt with.
本発明は、上記事情に鑑みてなされたもので、その目
的とするところは、ルツボ内の溶融物から発生した一酸
化ケイ素の凝縮が起こりにくく、固体化した粒子が溶融
物表面に落下することを抑制できて、単結晶化を阻害す
る要因を未然に排除できると共に、ルツボの内周壁部付
近の溶融物表面の目視が容易な単結晶引上装置を提供す
ることにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to prevent silicon monoxide generated from a melt in a crucible from being easily condensed, and solidified particles falling onto the surface of the melt. It is an object of the present invention to provide a single crystal pulling apparatus in which the factors that hinder single crystallization can be eliminated, and the surface of the melt near the inner peripheral wall of the crucible can be easily observed.
上記目的を達成するため、本発明は、チャンバ内で不
活性ガスの下降流雰囲気下においてルツボから単結晶棒
を引上成長させるチョクラルスキー法による単結晶引上
装置において、不活性ガスの下降流を単結晶棒に導く冷
却筒と、単結晶を包囲する如く形成され、該冷却筒を通
った不活性ガスをルツボの融液面に導くリフレクタとを
具備し、該リフレクタが、外径がルツボの内径より小径
の筒本体部と、この筒本体部の下端縁に続いて内方に先
細りし、その先細り先端縁が、単結晶棒との間及びルツ
ボ内の融液面との間にそれぞれ間隙を形成する傾斜筒部
と、該筒本体部の上端縁と上記冷却筒とをほぼ気密状態
に連結する円環状カバーとを有するものであり、かつ不
活性ガスが、上記冷却筒内に供給されると共に、該リフ
レクタ外部とチャンバ内面との空隙にも供給されること
を特徴とする単結晶引上装置を提供する。In order to achieve the above object, the present invention relates to a single crystal pulling apparatus using a Czochralski method for pulling a single crystal rod from a crucible under an inert gas descending atmosphere in a chamber. A cooling cylinder for guiding the flow to the single crystal rod, and a reflector formed so as to surround the single crystal and for guiding the inert gas passing through the cooling cylinder to the melt surface of the crucible, wherein the reflector has an outer diameter of A cylindrical main body having a diameter smaller than the inner diameter of the crucible, and tapered inward following the lower end edge of the cylindrical main body, and the tapered leading edge is between the single crystal rod and the melt surface in the crucible. The cooling cylinder has an inclined cylinder portion that forms a gap, and an annular cover that connects the upper end edge of the cylinder main body and the cooling cylinder in a substantially airtight state, and an inert gas is contained in the cooling cylinder. As well as a channel outside the reflector. Providing a single crystal pulling apparatus, characterized in that it is also supplied to the gap between the inner surface.
本発明の単結晶引上装置の不活性ガスの流れを説明す
ると、冷却筒に導入された不活性ガスは、冷却筒内を下
降して単結晶棒を冷却し、続いてリフレクタ内を流下
し、リフレクタの傾斜筒部の先端縁と単結晶棒との間
隙、次いで傾斜筒部の先端縁と融液面との間隙を通過
し、融液面の表面に導かれ、融液面から蒸発した一酸化
ケイ素を伴って筒本体部の外周面とルツボの隙間を通過
してルツボ外に排出される（第１ガス流）。一方、リフ
レクタ外部とチャンバ内面との空隙に別の不活性ガスが
供給され（第２ガス流）、ルツボの上端縁外方でこれら
の第１ガス流と第２ガス流とが合流し、その後装置外に
排出されるものである。Explaining the flow of the inert gas in the single crystal pulling apparatus of the present invention, the inert gas introduced into the cooling cylinder descends in the cooling cylinder to cool the single crystal rod, and then flows down in the reflector. , Passed through the gap between the tip edge of the inclined cylinder portion of the reflector and the single crystal rod, and then the gap between the tip edge of the inclined cylinder portion and the melt surface, guided to the surface of the melt surface, and evaporated from the melt surface. The gas is discharged out of the crucible through the gap between the outer peripheral surface of the cylinder main body and the crucible together with silicon monoxide (first gas flow). On the other hand, another inert gas is supplied to the gap between the outside of the reflector and the inner surface of the chamber (second gas flow), and the first gas flow and the second gas flow merge outside the upper end edge of the crucible. It is discharged outside the device.
このように、チャンバ内に供給する不活性ガスの流れ
を冷却筒１内部及び外部の二系統とすることによって、
融液面の表面部に流れる不活性ガスの流量及び流速を容
易にコントロールできる。また、ルツボ上端縁近傍で
は、第２ガス流によりアスピレーション効果が発生し、
そのためルツボ内を吸引する結果、融液表面から一酸化
ケイ素を含む雰囲気を巻き込んでルツボ外部に排出す
る。As described above, by making the flow of the inert gas supplied into the chamber into two systems inside and outside the cooling cylinder 1,
The flow rate and the flow rate of the inert gas flowing on the surface of the melt surface can be easily controlled. Further, in the vicinity of the upper edge of the crucible, an aspiration effect is generated by the second gas flow,
Therefore, as a result of sucking the inside of the crucible, an atmosphere containing silicon monoxide is involved from the surface of the melt and discharged out of the crucible.
従って、リフレクタに一酸化ケイ素が付着することを
可及的に防止することができると共に、融液表面におけ
る酸素濃度分布が均一に維持され、高品質の単結晶を得
ることができる。Therefore, it is possible to prevent silicon monoxide from adhering to the reflector as much as possible, to maintain a uniform oxygen concentration distribution on the melt surface, and to obtain a high-quality single crystal.
また、ルツボの内周壁とリフレクタとの間には間隙が
あり、ルツボの内周壁近傍の融液表面は覆われていない
ので、装置上部に内部を透視できる覗き窓を設ければ、
融液表面を直接観察することができる。Also, since there is a gap between the inner peripheral wall of the crucible and the reflector, and the surface of the melt near the inner peripheral wall of the crucible is not covered, if a viewing window is provided at the upper part of the apparatus so that the inside can be seen through,
The melt surface can be directly observed.
以下、図面に基づいて本発明の一実施例を説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図と第２図は本発明の一実施例を示すもので、第
１図は概略構成図、第２図はリフレクタの平面図であ
る。1 and 2 show an embodiment of the present invention. FIG. 1 is a schematic configuration diagram, and FIG. 2 is a plan view of a reflector.
これらの図において、チャンバ１のほぼ中央部には石
英ルツボ２が設けられている。そして、石英ルツボ２
は、黒鉛サセプタ２′を介して回転可能で垂直方向に可
動である下軸３に取付けられている。また、上記石英ル
ツボ２の周囲には、上記石英ルツボ２内のシリコン融液
４の温度を制御するヒータ５が設置されると共に、この
ヒータ５とチャンバ１との間には、保温筒６が配置され
ている。そして、その保温筒６の上面には、リング状の
支持部材７が設けられており、この支持部材７にリフレ
クタ８が支持されている。In these figures, a quartz crucible 2 is provided substantially at the center of a chamber 1. And quartz crucible 2
Is mounted on a lower shaft 3 which is rotatable and vertically movable via a graphite susceptor 2 '. A heater 5 for controlling the temperature of the silicon melt 4 in the quartz crucible 2 is provided around the quartz crucible 2, and a heat retaining cylinder 6 is provided between the heater 5 and the chamber 1. Are located. A ring-shaped support member 7 is provided on the upper surface of the heat retaining cylinder 6, and the reflector 8 is supported by the support member 7.
上記リフレクタ８は、外径が石英ルツボ２の内径より
小に設定され、軸が鉛直方向の円筒部9aと、この円筒部
9aの上方に続いてわずかに外方に傾斜した拡開筒部9b
と、上記円筒部9aの下方に続いて下方に行くに従い漸次
内方に先細りした傾斜筒部9cとを一体形成した又は分割
組立てたリフレクタ本体９と、このリフレクタ本体９の
拡開筒部9bの上端外縁に設けられ、かつ上記支持部材７
の上面に支持された３個のＬ字状フック（係止部）10
と、上記リフレクタ本体９の拡開筒部9bの上端内縁に設
けられ、かつ単結晶11を冷却する冷却筒12の外周面とほ
ぼ気密的に配置された円環状カバー13とから構成されて
いる。また、上記円環状カバー13には、チャンバ１に設
けられた覗き窓14から単結晶11とシリコン融液４との境
界部が目視できるように石英ガラス窓15が設けられてい
る。The reflector 8 has an outer diameter smaller than the inner diameter of the quartz crucible 2, and has a vertical cylindrical portion 9 a and a cylindrical portion 9 a.
The expanding cylinder part 9b that is slightly inclined outward following the upper part of 9a
And a reflector body 9 integrally formed or dividedly assembled with an inclined tubular portion 9c gradually tapering inward as it goes below and below the cylindrical portion 9a, and an expanded tubular portion 9b of the reflector Provided at the outer edge of the upper end and supporting member 7
L-shaped hooks (locking parts) 10 supported on the upper surface
And an annular cover 13 provided on the inner edge of the upper end of the expanded cylindrical portion 9b of the reflector main body 9 and arranged substantially airtightly with the outer peripheral surface of a cooling cylinder 12 for cooling the single crystal 11. . The annular cover 13 is provided with a quartz glass window 15 so that the boundary between the single crystal 11 and the silicon melt 4 can be seen from a viewing window 14 provided in the chamber 1.
上記のように構成された単結晶引上装置にあっては、
従来同様、石英ルツボ２内のシリコン融液４に種結晶を
浸漬させた後に、この種結晶を引上げることにより、種
結晶の下端に順次単結晶11が成長していく。In the single crystal pulling apparatus configured as described above,
As in the prior art, the seed crystal is immersed in the silicon melt 4 in the quartz crucible 2 and then pulled up, whereby the single crystal 11 grows sequentially at the lower end of the seed crystal.
なお、リフレクタ本体９の傾斜筒部9bの先端縁と引上
単結晶11との間に間隙G1、傾斜筒部9bの先端縁とルツボ
２内の融液４面との間に間隙G2が形成され、また、円筒
部9a外周面とルツボ２の内面との間にも間隙G3が形成さ
れ、これらの間隙を通して不活性ガスが流れるようにな
っている。A gap G1 is formed between the leading edge of the inclined cylindrical portion 9b of the reflector body 9 and the pulling single crystal 11, and a gap G2 is formed between the leading edge of the inclined cylindrical portion 9b and the surface of the melt 4 in the crucible 2. A gap G3 is also formed between the outer peripheral surface of the cylindrical portion 9a and the inner surface of the crucible 2, and an inert gas flows through these gaps.
この場合、単結晶の引上に伴い融液面が下がり、それ
に伴って傾斜筒部9cの下面と融液面との間隙を一定に保
つようにルツボ２を上昇させると、それだけ円筒部9aは
ルツボ２の中に進入するが、円筒部9aは鉛直方向に形成
され、かつ外径がルツボ２の内径より小になっているの
で、ルツボ２内面との間隙G3が一定に保たれるようにな
っている。In this case, the melt surface is lowered with the pulling of the single crystal, and accordingly, the crucible 2 is raised so as to keep the gap between the lower surface of the inclined cylindrical portion 9c and the melt surface constant. Although the cylindrical part 9a enters the crucible 2, the cylindrical part 9a is formed in the vertical direction, and the outer diameter is smaller than the inner diameter of the crucible 2, so that the gap G3 with the inner surface of the crucible 2 is kept constant. Has become.
次に、本発明の引上装置における不活性ガスの供給と
流れを説明する。本発明の引上装置は、チャンバ１内に
供給する不活性ガス、例えばアルゴンガスの流れを冷却
筒12の内部（第１ガス流）及び外部（第２ガス流）の二
系統とし、かつ、冷却筒12の内部側にアルゴンガスを供
給する供給管から分岐したバイパス管により冷却筒12の
外部側にアルゴンガスを供給するようにすることによっ
て、シリコン融液４の表面部に流れるアルゴンガスの流
量及び流速を容易にコントロールできる構造となってい
る。Next, the supply and flow of the inert gas in the lifting device of the present invention will be described. The pulling apparatus of the present invention is configured such that the flow of an inert gas, for example, an argon gas, supplied into the chamber 1 is divided into two systems of the inside (first gas flow) and the outside (second gas flow) of the cooling cylinder 12, and By supplying the argon gas to the outside of the cooling cylinder 12 by a bypass pipe branched from the supply pipe for supplying the argon gas to the inside of the cooling cylinder 12, the argon gas flowing on the surface of the silicon melt 4 is removed. It has a structure that can easily control the flow rate and flow velocity.
第１ガス流の流れを説明すると、冷却筒12内に供給さ
れたアルゴンガスは、冷却筒12内を下降し、次いでリフ
レクタ本体９内に入り、その拡開筒部9bを通り円筒部9a
内周面と単結晶棒11との間を流れて単結晶棒11を冷却す
る。そして傾斜筒部9c先端縁と単結晶棒11との狭い間隙
G1を流れて融液面に誘導され、次に傾斜筒部9c先端縁と
融液面との間隙G2を流れ、融液面上を水平方向に流れて
融液面から蒸発する一酸化ケイ素を含むようになる。一
酸化ケイ素を伴ったアルゴンガスは、次いでルツボ２と
円筒部9a外周面との間隙G3を上昇し、ルツボ２の外部に
排出される。Explaining the flow of the first gas flow, the argon gas supplied into the cooling cylinder 12 descends in the cooling cylinder 12, then enters the reflector main body 9, passes through the expanded cylinder part 9b, and passes through the cylindrical part 9a.
The single crystal rod 11 is cooled by flowing between the inner peripheral surface and the single crystal rod 11. And a narrow gap between the tip edge of the inclined cylindrical portion 9c and the single crystal rod 11
G1 is guided to the melt surface, and then flows through the gap G2 between the tip edge of the inclined cylindrical portion 9c and the melt surface, flows horizontally on the melt surface, and evaporates from the melt surface. To include. The argon gas accompanied with silicon monoxide then rises in the gap G3 between the crucible 2 and the outer peripheral surface of the cylindrical portion 9a, and is discharged outside the crucible 2.
一方、第２ガス流の流れを説明すると、アルゴンガス
供給管から分岐したアルゴンガスは、チャンバ１の内面
と冷却筒12外面との空間に供給され、拡開筒部9b外面と
保温材６との間隙G4を下降してルツボ２の縁に達し、こ
こで第１ガス流と合流する。On the other hand, to explain the flow of the second gas flow, the argon gas branched from the argon gas supply pipe is supplied to the space between the inner surface of the chamber 1 and the outer surface of the cooling cylinder 12, and the outer surface of the expanding cylinder portion 9 b and the heat insulating material 6 Down the gap G4 to reach the edge of the crucible 2, where it merges with the first gas flow.
合流したアルゴンガスは、ルツボ２と保温材６との間
隙を下降した後、チャンバ１外部に排出される。The merged argon gas is discharged to the outside of the chamber 1 after descending through the gap between the crucible 2 and the heat insulating material 6.
この場合、第２ガス流によりアスピレーション効果が
発生し、そのためルツボ２内を吸引する結果、融液表面
から一酸化ケイ素を含む雰囲気を巻き込んでルツボ２外
部に排出する。従って、リフレクタ本体９に一酸化ケイ
素の付着を可及的に防止することができると共に、融液
表面における酸素濃度分布が均一に維持され、単結晶11
内に含まれる酸素濃度を制御でき、高品質の単結晶を得
ることができる。In this case, an aspiration effect is generated by the second gas flow, and as a result, the inside of the crucible 2 is sucked. As a result, an atmosphere containing silicon monoxide is involved from the surface of the melt and is discharged to the outside of the crucible 2. Accordingly, the adhesion of silicon monoxide to the reflector main body 9 can be prevented as much as possible, and the oxygen concentration distribution on the melt surface is maintained uniform, and the single crystal 11
The concentration of oxygen contained therein can be controlled, and a high-quality single crystal can be obtained.
また、チャンバ１の覗き窓14から各Ｌ字状フック10間
の間隙を通して石英ルツボ２の内周壁部付近のシリコン
融液４の表面を視認できるので、この内周壁部において
万一再結晶が発生した場合には、確認が容易で、直ちに
適切な操作が実施できる。さらに、シリコン融液４と単
結晶11との境界部も、石英ガラス窓15を通して覗き窓14
から容易に監視できる。Further, since the surface of the silicon melt 4 near the inner peripheral wall of the quartz crucible 2 can be visually recognized from the viewing window 14 of the chamber 1 through the gap between the L-shaped hooks 10, recrystallization occurs in the inner peripheral wall. In such a case, the confirmation is easy and an appropriate operation can be immediately performed. Further, the boundary between the silicon melt 4 and the single crystal 11 is also viewed through the quartz glass window 15 through the viewing window 14.
Can be easily monitored from.
本発明の単結晶引上装置は、一酸化ケイ素の凝縮が生
じにくく、従って、単結晶化を阻害する要因を取り除く
ことができる上に、各係止部間の間隙を通してルツボ内
の溶融物の表面を視認できるという優れた効果を有す
る。The single crystal pulling apparatus according to the present invention makes it difficult for silicon monoxide to be condensed, so that it is possible to eliminate the factors that hinder single crystallization, and to remove the melt in the crucible through the gap between the locking portions. It has an excellent effect that the surface can be visually recognized.
第１図と第２図は本発明の一実施例を示すもので、第１
図は概略構成図、第２図はリフレクタの係止部の平面図
である。 １……チャンバ、２……ルツボ、６……保温筒、７……
支持部材、８……リフレクタ、９……リフレクタ本体、
9a……円筒部（筒本体部）、9b……拡開筒部（筒本体
部）、9c……傾斜筒部、10……Ｌ字状フック（係止
部）、11……単結晶棒、12……冷却筒、13……円環状カ
バー、14……覗き窓1 and 2 show an embodiment of the present invention.
FIG. 2 is a schematic configuration diagram, and FIG. 2 is a plan view of a locking portion of the reflector. 1 ... chamber, 2 ... crucible, 6 ... thermal insulation cylinder, 7 ...
Supporting member, 8 Reflector, 9 Reflector body,
9a ... cylindrical part (tube main part), 9b ... expanded cylindrical part (tube main part), 9c ... inclined cylinder part, 10 ... L-shaped hook (locking part), 11 ... single crystal rod , 12 ... Cooling cylinder, 13 ... Circular cover, 14 ... View window
Claims (1)
においてルツボから単結晶棒を引上成長させるチョクラ
ルスキー法による単結晶引上装置において、不活性ガス
の下降流を単結晶棒に導く冷却筒と、単結晶を包囲する
如く形成され、該冷却筒を通った不活性ガスをルツボの
融液面に導くリフレクタとを具備し、該リフレクタが、
外径がルツボの内径より小径の筒本体部と、この筒本体
部の下端縁に続いて内方に先細りし、その先細り先端縁
が、単結晶棒との間及びルツボ内の融液面との間にそれ
ぞれ間隙を形成する傾斜筒部と、該筒本体部の上端縁と
上記冷却筒とをほぼ気密状態に連結する円環状カバーと
を有するものであり、かつ不活性ガスが、上記冷却筒内
に供給されると共に、該リフレクタ外部とチャンバ内面
との空隙にも供給されることを特徴とする単結晶引上装
置。In a single crystal pulling apparatus using a Czochralski method for growing a single crystal rod from a crucible in an atmosphere of a downward flow of an inert gas in a chamber, the downward flow of the inert gas is applied to the single crystal rod. A cooling cylinder for guiding, and a reflector formed so as to surround the single crystal, and a reflector for guiding an inert gas passing through the cooling cylinder to the melt surface of the crucible, the reflector comprising:
The outer diameter of the cylindrical body is smaller than the inner diameter of the crucible, and the tapered tip edge is tapered inward following the lower edge of the cylindrical body, and the tapered tip edge is between the single crystal rod and the melt surface in the crucible. And an annular cover that connects the upper end edge of the cylinder main body and the cooling cylinder in a substantially airtight state, and the inert gas is used to cool the cooling cylinder. A single crystal pulling device, wherein the single crystal is pulled into the cylinder and also supplied to the gap between the outside of the reflector and the inner surface of the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256759A JP2580198B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256759A JP2580198B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100087A JPH01100087A (en) | 1989-04-18 |
| JP2580198B2 true JP2580198B2 (en) | 1997-02-12 |
Family
ID=17297047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62256759A Expired - Lifetime JP2580198B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580198B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710433B2 (en) * | 1990-01-24 | 1998-02-10 | 三菱マテリアル株式会社 | Single crystal pulling device |
| JP2807609B2 (en) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | Single crystal pulling device |
| JP2686223B2 (en) * | 1993-11-30 | 1997-12-08 | 住友シチックス株式会社 | Single crystal manufacturing equipment |
| US5683505A (en) * | 1994-11-08 | 1997-11-04 | Sumitomo Sitix Corporation | Process for producing single crystals |
-
1987
- 1987-10-12 JP JP62256759A patent/JP2580198B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01100087A (en) | 1989-04-18 |
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