JPH07276106A - Gaseous phase synthetic diamond film brazed cutting tool - Google Patents
Gaseous phase synthetic diamond film brazed cutting toolInfo
- Publication number
- JPH07276106A JPH07276106A JP6097979A JP9797994A JPH07276106A JP H07276106 A JPH07276106 A JP H07276106A JP 6097979 A JP6097979 A JP 6097979A JP 9797994 A JP9797994 A JP 9797994A JP H07276106 A JPH07276106 A JP H07276106A
- Authority
- JP
- Japan
- Prior art keywords
- phase synthetic
- diamond layer
- cutting tool
- polycrystalline diamond
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cutting Tools, Boring Holders, And Turrets (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、微細多結晶ダイヤモ
ンド層と粗大多結晶ダイヤモンド層の２層からなる気相
合成ダイヤモンド厚膜を切削工具に強固にろう付けして
なる耐摩耗性に優れた切削工具に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has excellent wear resistance obtained by firmly brazing a vapor phase synthetic diamond thick film consisting of two layers of a fine polycrystalline diamond layer and a coarse polycrystalline diamond layer to a cutting tool. It relates to cutting tools.
【０００２】[0002]
【従来の技術】従来、気相合成法により多結晶ダイヤモ
ンド厚膜は、熱フィラメント法により長時間かけて製造
され、これを切削工具基体にろう付けすることによりダ
イヤモンド切削工具が作製されていた（特開平１−１５
３２２８号公報、特開平１−２１２７６７号公報などを
参照）。2. Description of the Related Art Conventionally, a polycrystalline diamond thick film is produced by a vapor phase synthesis method by a hot filament method for a long time, and a diamond cutting tool is produced by brazing this to a cutting tool substrate ( Japanese Patent Laid-Open No. 1-15
3228, JP-A 1-212767, etc.).
【０００３】上記熱フィラメント法で作製された気相合
成ダイヤモンド厚膜は、微細な多結晶粒ダイヤモンドか
らなるために耐摩耗性が優れているが、成膜速度が遅い
ためにコストが高い。The vapor-phase synthetic diamond thick film produced by the hot filament method is excellent in wear resistance because it is made of fine polycrystalline grains, but it is expensive because of its slow film formation rate.
【０００４】そこで、近年、成膜速度の速い高周波熱プ
ラズマ法または直流アークプラズマ法により気相合成ダ
イヤモンド厚膜を形成し、この気相合成ダイヤモンド厚
膜を切削工具基体にろう付けしてダイヤモンド切削工具
を作製する方法が特開平６−３２６９７号公報により提
案されている。この方法によると、通常の高周波熱プラ
ズマ法または直流アークプラズマ法により形成された気
相合成ダイヤモンド膜の多結晶粒は粗大になりすぎて耐
摩耗性が不足し、切削工具に使用できないため、使用す
る反応ガス中に酸素を導入し、形成される気相合成ダイ
ヤモンド膜の結晶粒を微細化し、耐摩耗性を向上させて
いる。Therefore, in recent years, a vapor phase synthetic diamond thick film is formed by a high frequency thermal plasma method or a direct current arc plasma method, which has a high film forming rate, and this vapor phase synthetic diamond thick film is brazed to a cutting tool substrate to perform diamond cutting. A method for producing a tool is proposed in Japanese Patent Laid-Open No. 6-32697. According to this method, the polycrystalline particles of the vapor-phase synthetic diamond film formed by the usual high-frequency thermal plasma method or DC arc plasma method become too coarse and wear resistance is insufficient, so it cannot be used for cutting tools. By introducing oxygen into the reaction gas, the crystal grains of the vapor-phase synthetic diamond film formed are refined to improve the wear resistance.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記従来の方
法で作製した気相合成ダイヤモンド膜は耐摩耗性が十分
ではなく、さらに上記気相合成ダイヤモンド膜はろう付
け性が悪く、切削工具基体から剥離し、使用寿命が短い
などの課題があった。However, the vapor phase synthetic diamond film produced by the above-mentioned conventional method does not have sufficient wear resistance, and further the vapor phase synthetic diamond film has a poor brazing property and is There were problems such as peeling and short service life.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明者等は、
従来よりも一層使用寿命の長い気相合成ダイヤモンド膜
ろう付け切削工具を得るべく研究を行った結果、（ａ）
膜厚方向に柱状に成長した微細多結晶ダイヤモンド層
は、ランダム方向に成長した微細多結晶ダイヤモンド層
よりも耐摩耗性に優れる、（ｂ） 膜厚方向に柱状に成
長した粗大多結晶ダイヤモンド層は、微細多結晶ダイヤ
モンド層よりもアンカー効果が有効に働き、ろう付け性
に優れかつ熱伝導性に優れる、（ｃ） したがって、膜
厚方向に柱状に成長した微細多結晶ダイヤモンド層と膜
厚方向に柱状に成長した粗大多結晶ダイヤモンド層から
なる気相合成ダイヤモンド厚膜を作製し、この気相合成
ダイヤモンド厚膜の粗大多結晶ダイヤモンド層の面を切
削工具基体にろう付けして得られたダイヤモンド切削工
具は、すくい面が上記微細多結晶ダイヤモンド層からな
るところから耐摩耗性に優れ、さらにろう付け面が粗大
多結晶ダイヤモンド層であるところから強固にろう付け
され、熱拡散も早い、という知見を得たのである。Therefore, the present inventors have
As a result of research to obtain a vapor-phase synthetic diamond film brazing cutting tool that has a longer service life than before, (a)
The fine polycrystalline diamond layer grown columnar in the film thickness direction is superior in wear resistance to the fine polycrystalline diamond layer grown randomly. (B) The coarse polycrystalline diamond layer grown columnar in the film thickness direction is The anchor effect works more effectively than the fine polycrystalline diamond layer, and the brazing property and the thermal conductivity are excellent. (C) Therefore, the fine polycrystalline diamond layer grown columnar in the film thickness direction and the film thickness direction A diamond cutting obtained by producing a vapor-phase synthetic diamond thick film consisting of a columnar-grown coarse polycrystalline diamond layer and brazing the surface of the coarse polycrystalline diamond layer of this vapor-phase synthetic diamond thick film to a cutting tool substrate. The tool has excellent wear resistance because the rake face consists of the fine polycrystalline diamond layer described above, and the brazed surface has a coarse polycrystalline diamond layer. Is firmly brazed from a certain place, faster thermal diffusion, it was obtained a finding that.
【０００７】この発明は、かかる知見に基づいてなされ
たものであって、膜厚方向に柱状に成長した平均粒径：
２０μｍ未満の微細多結晶ダイヤモンド層と、膜厚方向
に柱状に成長した平均粒径：２０〜８０μｍの粗大多結
晶ダイヤモンド層からなる気相合成ダイヤモンド厚膜
を、上記粗大多結晶ダイヤモンド層の面を切削工具基体
にろう付けしてなる気相合成ダイヤモンド膜ろう付け切
削工具に特徴を有するものである。The present invention has been made on the basis of such findings, and has an average grain size grown in a columnar shape in the film thickness direction:
A vapor phase synthetic diamond thick film composed of a fine polycrystalline diamond layer having a size of less than 20 μm and a coarse polycrystalline diamond layer having a columnar size-grown in the film thickness direction and having an average particle size of 20 to 80 μm is formed on the surface of the coarse polycrystalline diamond layer. It is characterized by a vapor phase synthetic diamond film brazing cutting tool which is brazed to a cutting tool substrate.
【０００８】上記膜厚方向に柱状に成長した微細多結晶
ダイヤモンド層の平均粒径は、微細多結晶ダイヤモンド
膜の表面から見た平均結晶粒径の値であり、その値は微
細なほど好ましいが、２０μｍ以上となると耐摩耗性が
不足するので好ましくない。The average grain size of the fine polycrystalline diamond layer grown columnar in the film thickness direction is a value of the average grain size seen from the surface of the fine polycrystalline diamond film, and the finer the value, the better. If it is 20 μm or more, abrasion resistance becomes insufficient, which is not preferable.
【０００９】一方、上記膜厚方向に柱状に成長した粗大
多結晶ダイヤモンド層の平均粒径は、粗大多結晶ダイヤ
モンド膜の表面から見た平均結晶粒径の値であり、その
値は８０μｍを越えると膜の強度が不足するところから
２０〜８０μｍに定めた。On the other hand, the average grain size of the coarse polycrystalline diamond layer grown columnar in the film thickness direction is the average grain size of the coarse polycrystalline diamond film as seen from the surface, and the value exceeds 80 μm. Since the strength of the film is insufficient, the thickness is set to 20 to 80 μm.
【００１０】この発明の微細多結晶ダイヤモンド層と粗
大多結晶ダイヤモンド層からなる気相合成ダイヤモンド
膜は、（１） 基板表面に熱フィラメント法またはマイ
クロ波プラズマ法を用いて微細多結晶ダイヤモンド膜を
気相合成し、次に高周波熱プラズマ法または直流アーク
プラズマ法により粗大多結晶ダイヤモンド膜を形成する
方法、または、（２） 高周波熱プラズマ法または直流
アークプラズマ法を用い、反応ガスにＯ2 を導入し、基
板温度を下げて基板表面に微細多結晶ダイヤモンド膜を
気相合成し、次にＯ2 を導入することなく高周波熱プラ
ズマ法または直流アークプラズマ法により気相合成速度
を上げて粗大多結晶ダイヤモンド膜を形成する方法によ
り作製することができる。The vapor-phase synthetic diamond film comprising the fine polycrystalline diamond layer and the coarse polycrystalline diamond layer of the present invention is (1) a fine polycrystalline diamond film formed on the surface of a substrate by using a hot filament method or a microwave plasma method. Phase synthesis, and then a method of forming a coarse polycrystalline diamond film by a high frequency thermal plasma method or a direct current arc plasma method, or (2) using a high frequency thermal plasma method or a direct current arc plasma method to introduce O 2 into a reaction gas Then, the substrate temperature is lowered to vapor-phase synthesize a fine polycrystalline diamond film on the substrate surface, and then the vapor-phase synthesis rate is increased by the high frequency thermal plasma method or the DC arc plasma method without introducing O 2 to increase the coarse polycrystalline It can be manufactured by a method of forming a diamond film.
【００１１】この時に用いる基板はＭｏ，ＷまたはＳｉ
で、この基板上に（１００）に配向した微細多結晶ダイ
ヤモンド層が極めて薄く形成されるが、すぐに（１１
１）に主として配向した微細多結晶ダイヤモンド層が形
成され、次に上記微細多結晶ダイヤモンド層の上に（１
１１）に配向した粗大多結晶ダイヤモンド層が形成さ
れ、実質的に（１１１）に配向した微細多結晶ダイヤモ
ンド層および粗大多結晶ダイヤモンド層からなる気相合
成ダイヤモンド厚膜が得られる。The substrate used at this time is Mo, W or Si.
Then, a (100) -oriented fine polycrystalline diamond layer is formed extremely thin on this substrate, but immediately after (11
In (1), a finely oriented fine polycrystalline diamond layer is formed, and then (1) is formed on the fine polycrystalline diamond layer.
A coarse polycrystalline diamond layer oriented in (11) is formed, and a vapor-phase synthetic diamond thick film substantially composed of a fine polycrystalline diamond layer oriented in (111) and a coarse polycrystalline diamond layer is obtained.
【００１２】このようにして得られた気相合成ダイヤモ
ンド厚膜は基板を溶解除去することにより剥離され、粗
大多結晶ダイヤモンド層の面を切削工具にろう付けする
ことによりこの発明の気相合成ダイヤモンド膜ろう付け
切削工具が製造される。The vapor-phase synthetic diamond thick film thus obtained is peeled off by dissolving and removing the substrate, and the surface of the coarse polycrystalline diamond layer is brazed to a cutting tool to form the vapor-phase synthetic diamond of the present invention. A film brazing cutting tool is manufactured.
【００１３】上述のように耐摩耗性の優れた微細多結晶
ダイヤモンド層の下に熱伝導性の優れた粗大多結晶ダイ
ヤモンド層が形成されているこの発明の気相合成ダイヤ
モンド膜ろう付け切削工具は、切削時にすくい面に発生
する熱拡散が容易に行なわれ、気相合成ダイヤモンド膜
の熱影響が軽減されることも長寿命化の原因であると考
えられる。As described above, the vapor phase synthetic diamond film brazing cutting tool of the present invention in which the coarse polycrystalline diamond layer having excellent thermal conductivity is formed under the fine polycrystalline diamond layer having excellent wear resistance It is also considered that the long life is due to the fact that the heat diffusion generated on the rake face during cutting is easily performed and the thermal effect of the vapor phase synthetic diamond film is reduced.
【００１４】[0014]
【実施例】Ｍｏ基板を鏡面状態まで研摩したのち２〜４
μｍのダイヤモンド粉末で研摩し、さらに５〜２０ｎｍ
のダイヤモンド粉末で研摩し、さらにこのダイヤモンド
粉末で研摩したＭｏ基板を超音波洗浄した。[Example] 2-4 after polishing the Mo substrate to a mirror state
Polished with μm diamond powder, then 5-20 nm
The diamond substrate was polished with the diamond powder of No. 3, and the Mo substrate polished with the diamond powder was ultrasonically cleaned.
【００１５】実施例１ 上記超音波洗浄したＭｏ基板の上に下記の条件の熱フィ
ラメント法を表１に示される合成時間行うことにより表
１に示される膜厚および平均粒径を有する微細多結晶ダ
イヤモンド層を形成した。Example 1 A fine polycrystal having a film thickness and an average grain size shown in Table 1 was prepared by performing a hot filament method under the following conditions on the above-mentioned ultrasonically cleaned Mo substrate for the synthesis time shown in Table 1. A diamond layer was formed.
【００１６】熱フィラメント法の条件、 フィラメント材：Ｔａ線、 フィラメント温度：２２２０℃、 使用ガス流量 Ｈ2 ：５００ＳＣＣＭ、Ｃ2 Ｈ5 ＯＨ：
１５ＳＣＣＭ、 圧力：２０Torr。Conditions of the hot filament method, filament material: Ta wire, filament temperature: 2220 ° C., working gas flow rate H 2 : 500 SCCM, C 2 H 5 OH:
15 SCCM, pressure: 20 Torr.
【００１７】上記表１に示される厚さおよび平均粒径を
有する微細多結晶ダイヤモンド層の上に、さらに、下記
の条件の直流アークプラズマ法を表１に示される合成時
間行うことにより表１に示される膜厚および平均粒径を
有する粗大多結晶ダイヤモンド層を形成した。On the fine polycrystalline diamond layer having the thickness and the average grain size shown in Table 1 above, a direct current arc plasma method under the following conditions was performed for the synthesis time shown in Table 1 to give Table 1. A coarse polycrystalline diamond layer having the indicated film thickness and average grain size was formed.
【００１８】直流アークプラズマ法の条件、 使用ガス流量 Ａｒ：８ＳＬＭ、Ｈ2 ：３．２ＳＬＭ、
ＣＨ4 ：０．１２ＳＬＭ、 圧力：８０Torr、 電力：１０ＫＶＡ。Conditions of DC arc plasma method, flow rate of gas used Ar: 8 SLM, H 2 : 3.2 SLM,
CH 4: 0.12SLM, pressure: 80 Torr, power: 10KVA.
【００１９】このようにしてＭｏ基板上に形成された微
細多結晶ダイヤモンド層および粗大多結晶ダイヤモンド
層からなる気相合成ダイヤモンド厚膜は、Ｍｏ基板を弗
酸硝酸の混合酸で溶解除去することにより取り出され、
超硬合金製切削工具にろう付けすべき大きさに切り出
し、粗大多結晶ダイヤモンド層がろう付け面となるよう
にろう付し、本発明気相合成ダイヤモンドろう付け切削
工具（以下、本発明切削工具という）１〜５を作製し
た。The vapor-phase synthetic diamond thick film composed of the fine polycrystalline diamond layer and the coarse polycrystalline diamond layer thus formed on the Mo substrate is obtained by dissolving and removing the Mo substrate with a mixed acid of hydrofluoric and nitric acid. Taken out,
Cutting out to a size to be brazed to a cemented carbide cutting tool, and brazing so that the coarse polycrystalline diamond layer serves as a brazing surface, and the present invention vapor phase synthetic diamond brazing cutting tool (hereinafter referred to as the present invention cutting tool 1) to 5 were produced.
【００２０】この時のろう付け条件は、市販のＡｕ−Ｓ
ｎ系ろう材を使用し、このろう材を上記気相合成ダイヤ
モンド厚膜と超硬合金製切削工具の間に挟み、これを温
度：９００℃、減圧Ｈ2 雰囲気中で７分間保持したの
ち、５００℃まで３℃／min の速さで冷却し、さらに常
温まで炉冷することによりろう付けした。The brazing conditions at this time are as follows:
An n-based brazing material is used, and the brazing material is sandwiched between the vapor phase synthetic diamond thick film and the cutting tool made of cemented carbide, and this is held at a temperature of 900 ° C. under a reduced pressure H 2 atmosphere for 7 minutes, It was brazed by cooling to 500 ° C. at a rate of 3 ° C./min and further furnace cooling to room temperature.
【００２１】上記本発明切削工具１〜５について、下記
に示す条件の切削試験を行ない、切削後の逃げ面摩耗幅
を測定し、その測定結果を表１に示した。The cutting tools 1 to 5 of the present invention were subjected to a cutting test under the following conditions, the flank wear width after cutting was measured, and the measurement results are shown in Table 1.
【００２２】切削試験条件、 被削材：Ａ３９０−Ｔ６（１８％Ｓｉ−Ａｌ合金） 切削速度：１０００ｍ／min 、 送り：０．１mm／rev ．、 切り込み：０．５mm、 切削時間：３０分、 実施例２ 超音波洗浄したＭｏ基板の上に、下記の条件のマイクロ
ウエーブプラズマ法を表１に示される合成時間実施する
ことにより表１に示される膜厚および平均結晶粒径を有
する微細多結晶ダイヤモンド層を形成した。Cutting test conditions, Work material: A390-T6 (18% Si-Al alloy) Cutting speed: 1000 m / min, Feed: 0.1 mm / rev. Incision: 0.5 mm Cutting time: 30 minutes Example 2 Shown in Table 1 by performing a microwave plasma method under the following conditions on the ultrasonically cleaned Mo substrate for the synthesis time shown in Table 1. To form a fine polycrystalline diamond layer having a film thickness and an average crystal grain size.
【００２３】マイクロウエーブプラズマ法の条件、 使用ガス流量 Ｈ2 ：３００ＳＣＣＭ、ＣＨ4 ：２ＳＣ
ＣＭ、 圧力：２０Torr、 マイクロ波電力（１３．５ＭＨｚ）：８００Ｗ これら微細多結晶ダイヤモンド層の上に、さらに実施例
１で示した条件の直流アークプラズマ法を表１に示され
る合成時間行うことにより表１に示される膜厚および平
均結晶粒径を有する粗大多結晶ダイヤモンド層を形成し
た。Conditions of the microwave plasma method, used gas flow rate H 2 : 300 SCCM, CH 4 : 2 SC
CM, pressure: 20 Torr, microwave power (13.5 MHz): 800 W By performing a DC arc plasma method under the conditions shown in Example 1 on these fine polycrystalline diamond layers, the synthesis time shown in Table 1 was applied. A coarse polycrystalline diamond layer having the film thickness and the average crystal grain size shown in Table 1 was formed.
【００２４】このようにしてＭｏ基板上に形成された微
細多結晶ダイヤモンド層および粗大多結晶ダイヤモンド
層からなる気相合成ダイヤモンド厚膜を実施例１と同様
にして取り出したのち、ろう付けして実施例１と同様に
してろう付けし、本発明切削工具６〜９を作製した。A vapor phase synthetic diamond thick film consisting of a fine polycrystalline diamond layer and a coarse polycrystalline diamond layer thus formed on a Mo substrate was taken out in the same manner as in Example 1 and then brazed. The cutting tools 6 to 9 of the present invention were produced by brazing in the same manner as in Example 1.
【００２５】得られた本発明切削工具６〜９を実施例１
の切削試験条件と同じ条件で切削試験し、切削後の逃げ
面摩耗幅を測定し、その結果を表１に示した。The obtained cutting tools 6 to 9 of the present invention were used in Example 1.
A cutting test was performed under the same cutting test conditions as above, and the flank wear width after cutting was measured. The results are shown in Table 1.
【００２６】実施例３ 上記超音波洗浄したＭｏ基板の上に、下記の条件の直流
アークプラズマ法を表１に示される合成時間行うことに
より表１に示される膜厚および平均粒径を有する微細多
結晶ダイヤモンド層を形成した。Example 3 On the above-mentioned ultrasonically cleaned Mo substrate, a DC arc plasma method under the following conditions was performed for the synthesis time shown in Table 1 to obtain fine particles having the film thickness and the average particle size shown in Table 1. A polycrystalline diamond layer was formed.
【００２７】微細多結晶ダイヤモンド層を形成するため
の直流アークプラズマ法の条件、 使用ガス流量 Ａｒ：８ＳＬＭ、Ｈ2 ：４ＳＬＭ、ＣＨ
4 ：０．１ＳＬＭ、Ｏ2 ：０．０２ＳＬＭ※、 圧力：６０Torr、 電力：１０ＫＶＡ、 （※Ｏ2 の導入は、ダイヤモンド合成を開始してから１
５分後に入れる） このようにしてＭｏ基板上に形成された微細多結晶ダイ
ヤモンド層の上に、さらに実施例１で示した条件の直流
アークプラズマ法を表１に示される合成時間行うことに
より表１に示される膜厚および平均結晶粒径を有する粗
大多結晶ダイヤモンド層を形成した。[0027] Conditions of DC arc plasma method for forming a fine layer of polycrystalline diamond, the usage gas flow Ar: 8SLM, H 2: 4SLM , CH
4 : 0.1 SLM, O 2 : 0.02 SLM * , pressure: 60 Torr, electric power: 10 KVA, (* O 2 was introduced after starting diamond synthesis 1
After 5 minutes, the fine polycrystal diamond layer thus formed on the Mo substrate was subjected to the direct current arc plasma method under the conditions shown in Example 1 for the synthesis time shown in Table 1 to obtain A coarse polycrystalline diamond layer having a film thickness and an average crystal grain size shown in 1 was formed.
【００２８】このようにしてＭｏ基板上に形成された微
細多結晶ダイヤモンド層および粗大多結晶ダイヤモンド
層からなる気相合成ダイヤモンド厚膜を実施例１と同様
にして取り出したのち、そう付けして実施例１と同様に
してろう付けし、本発明切削工具１０〜１３を作製し
た。A vapor-phase synthetic diamond thick film composed of a fine polycrystalline diamond layer and a coarse polycrystalline diamond layer thus formed on a Mo substrate was taken out in the same manner as in Example 1, and then attached to carry out. Brazing was performed in the same manner as in Example 1 to produce cutting tools 10 to 13 of the present invention.
【００２９】得られた本発明切削工具１０〜１３を実施
例１の切削試験条件と同じ条件で切削試験し、切削後の
逃げ面摩耗幅を測定し、その結果を表１に示した。The cutting tools 10 to 13 of the present invention thus obtained were subjected to a cutting test under the same cutting test conditions as in Example 1, the flank wear width after cutting was measured, and the results are shown in Table 1.
【００３０】従来例１ 超音波洗浄したＭｏ基板上に、下記の条件の直流アーク
プラズマ法を表１に示される合成時間行うことにより表
１に示される膜厚および平均粒径を有する粗大多結晶ダ
イヤモンド層のみを形成し、この粗大多結晶ダイヤモン
ド層を実施例１と同様にしてＭｏ基板から剥離し、超硬
合金製切削工具にろう付けして従来切削工具を作製し、
実施例１と同じ条件で切削試験を行ない、その結果を表
１に示した。Conventional Example 1 A coarse polycrystal having a film thickness and an average grain size shown in Table 1 is obtained by performing a DC arc plasma method under the following conditions on a Mo substrate that has been ultrasonically cleaned, for a synthesis time shown in Table 1. Only the diamond layer was formed, and this coarse polycrystalline diamond layer was peeled off from the Mo substrate in the same manner as in Example 1 and brazed to a cemented carbide cutting tool to produce a conventional cutting tool,
A cutting test was conducted under the same conditions as in Example 1, and the results are shown in Table 1.
【００３１】[0031]
【表１】 [Table 1]
【００３２】[0032]
【発明の効果】表１に示される結果から、微細多結晶ダ
イヤモンド層および粗大多結晶ダイヤモンド層からなる
気相合成ダイヤモンド厚膜をろう付けした本発明切削工
具１〜１３は、全体が粗大多結晶ダイヤモンド層のみか
らなる気相合成ダイヤモンド厚膜をろう付けした従来切
削工具に比べて、逃げ面摩耗幅が大幅に小さいところか
ら、耐摩耗性に優れていることがわかる。From the results shown in Table 1, the cutting tools 1 to 13 of the present invention in which the vapor phase synthetic diamond thick film consisting of the fine polycrystalline diamond layer and the coarse polycrystalline diamond layer are brazed are entirely coarse polycrystalline. Compared with a conventional cutting tool brazed with a vapor-phase synthetic diamond thick film consisting of only a diamond layer, the flank wear width is significantly smaller, indicating that it has excellent wear resistance.
【００３３】したがって、この発明の気相合成ダイヤモ
ンド膜ろう付け切削工具は、従来の気相合成ダイヤモン
ド膜ろう付け切削工具に比べて工具寿命が長く、工具の
交換周期が短くなって切削作業の効率化が計られるなど
産業上すぐれた効果を奏するものである。Therefore, the vapor phase synthetic diamond film brazing cutting tool of the present invention has a longer tool life than the conventional vapor phase synthetic diamond film brazing cutting tool, and the tool replacement cycle is shortened, resulting in efficient cutting work. It has excellent industrial effects, such as the adoption of various technologies.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ３０Ｂ 29/04 Ｘ 8216−4Ｇ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location C30B 29/04 X 8216-4G
Claims (1)
０μｍ未満の微細多結晶ダイヤモンド層と、膜厚方向に
柱状に成長した平均粒径：２０〜８０μｍの粗大多結晶
ダイヤモンド層からなる気相合成ダイヤモンド厚膜を、
上記粗大多結晶ダイヤモンド層の面を切削工具基体にろ
う付けしてなることを特徴とする気相合成ダイヤモンド
膜ろう付け切削工具。1. An average particle size of columnar growth in the thickness direction: 2
A vapor-phase synthetic diamond thick film composed of a fine polycrystalline diamond layer of less than 0 μm and a coarse polycrystalline diamond layer of columnar size-grown in the thickness direction of 20 to 80 μm,
A vapor phase synthetic diamond film brazing cutting tool, characterized in that the surface of the coarse polycrystalline diamond layer is brazed to a cutting tool substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6097979A JPH07276106A (en) | 1994-04-12 | 1994-04-12 | Gaseous phase synthetic diamond film brazed cutting tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6097979A JPH07276106A (en) | 1994-04-12 | 1994-04-12 | Gaseous phase synthetic diamond film brazed cutting tool |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07276106A true JPH07276106A (en) | 1995-10-24 |
Family
ID=14206787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6097979A Pending JPH07276106A (en) | 1994-04-12 | 1994-04-12 | Gaseous phase synthetic diamond film brazed cutting tool |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07276106A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10259482A (en) * | 1997-03-19 | 1998-09-29 | Sanyo Electric Co Ltd | Formation of hard carbon coating |
| US6528115B1 (en) | 1997-03-19 | 2003-03-04 | Sanyo Electric Co., Ltd. | Hard carbon thin film and method of forming the same |
| JP2010228031A (en) * | 2009-03-26 | 2010-10-14 | Mitsubishi Materials Corp | Diamond-coated cutting tool |
| JP2011098424A (en) * | 2009-11-09 | 2011-05-19 | Mitsubishi Materials Corp | Diamond-coated tool exhibiting excellent chipping resistance and excellent wear resistance |
| JP2015130323A (en) * | 2013-12-06 | 2015-07-16 | キヤノン株式会社 | Transmission-type target and x-ray generation tube provided with the transmission-type target |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03197677A (en) * | 1989-12-25 | 1991-08-29 | Sumitomo Electric Ind Ltd | Diamond-coated tool and its production |
-
1994
- 1994-04-12 JP JP6097979A patent/JPH07276106A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03197677A (en) * | 1989-12-25 | 1991-08-29 | Sumitomo Electric Ind Ltd | Diamond-coated tool and its production |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10259482A (en) * | 1997-03-19 | 1998-09-29 | Sanyo Electric Co Ltd | Formation of hard carbon coating |
| US6528115B1 (en) | 1997-03-19 | 2003-03-04 | Sanyo Electric Co., Ltd. | Hard carbon thin film and method of forming the same |
| JP2010228031A (en) * | 2009-03-26 | 2010-10-14 | Mitsubishi Materials Corp | Diamond-coated cutting tool |
| JP2011098424A (en) * | 2009-11-09 | 2011-05-19 | Mitsubishi Materials Corp | Diamond-coated tool exhibiting excellent chipping resistance and excellent wear resistance |
| JP2015130323A (en) * | 2013-12-06 | 2015-07-16 | キヤノン株式会社 | Transmission-type target and x-ray generation tube provided with the transmission-type target |
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