JPH07249830A - Manufacture of semiconductor light-emitting element - Google Patents

Manufacture of semiconductor light-emitting element

Info

Publication number
JPH07249830A
JPH07249830A JP3944394A JP3944394A JPH07249830A JP H07249830 A JPH07249830 A JP H07249830A JP 3944394 A JP3944394 A JP 3944394A JP 3944394 A JP3944394 A JP 3944394A JP H07249830 A JPH07249830 A JP H07249830A
Authority
JP
Japan
Prior art keywords
crystal
groove
algainn
plane
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3944394A
Other languages
Japanese (ja)
Inventor
Shigekazu Minagawa
重量 皆川
Toshiaki Tanaka
俊明 田中
Yoshihiro Ishitani
善博 石谷
So Otoshi
創 大歳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3944394A priority Critical patent/JPH07249830A/en
Publication of JPH07249830A publication Critical patent/JPH07249830A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

PURPOSE:To obtain a semiconductor light-emitting element which forms a Fabry- Perot cavity in an Al GaInN-based epitaxial crystal. CONSTITUTION:In an AlGaInN-based epitaxial crystal having a Wurtzite-type crystal structure, a groove is cut vertically in the face of the eptiaxial crystal, an epitaxial crystal is grown on side faces of the groove, and a good Fabry- Perot cavity is formed. Concretely, as shown in the figure, a groove 18 is dug in A GaInN-based crystal layers 12 to 16, a crystal growth layer 19 is formed on its sidewalls, and a flat reflecting face is formed. Thereby, it is possible to form the Fabry-Perot cavity in the AlGaInN-based epitaxial crystal, which has been difficult in conventional cases.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体発光素子の製造方
法にかかわる。The present invention relates to a method for manufacturing a semiconductor light emitting device.

【０００２】[0002]

【従来の技術】可視光領域の発光素子は従来、主として
III−Ｖ族化合物半導体のうちの燐化物あるいは砒化物
結晶を用いて製造されてきた。例えば赤色にはGaAsP,Ga
P,AlGaInP，緑色にはGaPなどが使われている。最近、よ
り波長の短い青色光を発する素子の研究開発が盛んに行
われているが、これには禁制帯幅のより広い窒化物結晶
が使われている。発光素子は通常サファイア結晶の(000
1)面上にAlGaInN系の結晶から成るホモ接合あるいはヘ
テロ接合を有機金属気相成長法によって形成することに
よって作られる。これは（0001)面上での結晶成長がも
っとも良質な結晶を与えるからである。発光ダイオード
の場合は光はチップの上面からとりだすのであまり問題
はないが、今後半導体レーザを作っていく場合にはレー
ザ発振のためのキャビテイをどのように形成するかが大
きな問題となる。2. Description of the Related Art Light-emitting elements in the visible light region have hitherto been mainly
It has been manufactured using a phosphide or arsenide crystal among III-V compound semiconductors. For example, red is GaAsP, Ga
P, AlGaInP, and GaP are used for green. Recently, research and development of a device that emits blue light having a shorter wavelength has been actively conducted, but a nitride crystal having a wider forbidden band is used for this. The light emitting device is usually made of sapphire crystal (000
1) A homojunction or a heterojunction composed of AlGaInN-based crystals is formed on the plane by metalorganic vapor phase epitaxy. This is because crystal growth on the (0001) plane gives the highest quality crystals. In the case of a light emitting diode, light is taken out from the upper surface of the chip, so there is not much problem, but in the case of making a semiconductor laser in the future, how to form a cavity for laser oscillation becomes a big problem.

【０００３】[0003]

【発明が解決しようとする課題】問題点の第一はサファ
イアという固いセラミック基板結晶を用いていることで
ある。発光ダイオードの場合はダイアモンド・ソーでウ
エハをチップに切り出せば問題ない。しかし光をチップ
の側面から取り出すedge-emitting LED(Light Emitting
Diodes)やレーザの場合にはウエーハからチップにする
ときに、きれいに割れる必要がある。不規則に割れた
り、割った面が荒れていたりすると光の取りだしに支障
が生ずるからである。とくにレーザの場合はきれいに劈
開面が出来て平行性のよい鏡面が得られなければならな
い。第二の問題点は基板結晶ならびにその上につけるエ
ピタキシャル結晶がともにウルツ鉱型の結晶であって容
易に劈開出来る結晶面を有していないことである。結晶
が薄い場合は(0001)面を辛うじて劈開面として用いうる
が、本発明の対象となっている窒化物のエピタキシアル
成長の場合には上述のように(0001)面が結晶成長面にな
るので、通常のレーザ構造においてはキャビテイの反射
面として用いることは出来ない。(0001)面に垂直な鏡面
を劈開以外の方法で如何に形成するかがこの材料系で半
導体レーザを実現するための鍵となる。The first problem is that a hard ceramic substrate crystal called sapphire is used. In the case of a light emitting diode, it is no problem if the wafer is cut into chips with a diamond saw. However, edge-emitting LEDs (Light Emitting
In the case of Diodes) and lasers, it is necessary to cleanly break the wafer into chips. This is because if it is broken irregularly or if the split surface is rough, it will interfere with the extraction of light. Especially in the case of a laser, a cleavage plane must be formed neatly and a mirror surface with good parallelism must be obtained. The second problem is that both the substrate crystal and the epitaxial crystal formed thereon are wurtzite type crystals and do not have a crystal plane that can be easily cleaved. When the crystal is thin, the (0001) plane can barely be used as a cleavage plane, but in the case of the epitaxial growth of the nitride which is the subject of the present invention, the (0001) plane becomes the crystal growth plane as described above. Therefore, it cannot be used as a cavity reflection surface in a normal laser structure. How to form a mirror surface perpendicular to the (0001) plane by a method other than cleavage is a key for realizing a semiconductor laser with this material system.

【０００４】本発明の目的は、上記問題点を解決した半
導体発光素子の製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device that solves the above problems.

【０００５】[0005]

【課題を解決するための手段】上記目的は劈開によらず
に結晶成長によっ平坦な結晶面を形成し、これをレーザ
キャビテイの反射面として用いることによって達成され
る。まず、(0001)ウエハ上に成長したAlGaInN系結晶層
の表面を保護膜（例えばSiO2膜）を堆積することによっ
て保護し、ついでフォトリソグラフ技術とエッチングな
どの食刻技術によりウエハ上に平行な溝を形成する。溝
の側面は出来るだけ表面に対して垂直になるように実験
条件を選ぶ。このウエハを結晶成長炉にいれて溝の部分
にAlGaInN系の結晶を成長する。溝の加工によって生じ
ていた溝表面の凹凸は結晶の成長と共にしだいにならさ
れて平坦な側面を形成する。The above-mentioned object can be achieved by forming a flat crystal surface by crystal growth without using cleavage and using this as a reflecting surface of laser cavities. First, the surface of the AlGaInN-based crystal layer grown on the (0001) wafer is protected by depositing a protective film (eg, SiO 2 film), and then a parallel film is formed on the wafer by photolithography technology and etching technology such as etching. Form a groove. The experimental conditions are selected so that the side surface of the groove is as perpendicular to the surface as possible. This wafer is put into a crystal growth furnace to grow an AlGaInN-based crystal in the groove portion. The unevenness of the groove surface caused by the processing of the groove is gradually smoothed along with the growth of crystals to form a flat side surface.

【０００６】[0006]

【作用】上記の手段によりウエハ上に平行に切られた溝
の側面は結晶面で規定される平面となるので、ウルツ鉱
型AlGaInNの(0001)エピタキシャルウエハ上に反射率が
高く平行度の良いキャビテイを形成することが出来る。The side surface of the groove cut in parallel on the wafer by the above means becomes a plane defined by the crystal plane, so that the reflectance is high and the parallelism is good on the (0001) epitaxial wafer of wurtzite AlGaInN. Can form cavities.

【０００７】[0007]

【実施例】本発明を図１にもとづいて説明する。結晶の
成長には有機金属気相エピタキシャル成長法を用いる。
トリメチルアルミニウム、トリメチルガリウム、トリメ
チルインジウムをIII族元素のプレカーサとし、アンモ
ニアをＶ族元素のプレカーサとして用いる。サファイア
の(0001)基板結晶11を結晶成長炉に入れて1000℃に加熱
したのち、上記プリカーサをその上に流してGaN層12、A
lGaInN層13、GaInN層14、AlGaInN層15、GaN層16の各層
をそれぞれ10μｍ、1μｍ、0.1μｍ、1μｍ、2μｍ成長
させた五層構造を形成する。この構造によりキャリアの
閉じ込めと光の導波が可能となる。このウエハを取りだ
してその表面上にSiO2膜17をつけ、フォトリソグラフと
SiCl4を用いたドライエッチングによって前記五層の窒
化物結晶の上に幅500μｍの［11-20］方向に平行な溝18
を500μｍごとに形成する。このウエハを再び結晶成長
炉に入れてAlGaN層19を5μｍ成長すると、溝の側面に平
行性の良い一対のファブリ・ペロー反射面20が形成され
た。このウエハを反射面に直角に幅400μｍに切り出
し、波長442μｍの紫外線で励起すると波長480nmの青色
光のレーザ発振を示した。本実施例では溝の方向を[11-
20]方向に取った例を示したが、[1-100]方向でも良い
し、この二つの面の間の結晶面を用いても良い。The present invention will be described with reference to FIG. A metal organic vapor phase epitaxial growth method is used for crystal growth.
Trimethylaluminum, trimethylgallium, and trimethylindium are used as group III element precursors, and ammonia is used as group V element precursors. The (0001) substrate crystal 11 of sapphire was placed in a crystal growth furnace and heated to 1000 ° C., and then the precursor was flown on the GaN layer 12, A
Each of the lGaInN layer 13, the GaInN layer 14, the AlGaInN layer 15, and the GaN layer 16 is grown in a thickness of 10 μm, 1 μm, 0.1 μm, 1 μm, and 2 μm to form a five-layer structure. With this structure, carriers can be confined and light can be guided. This wafer is taken out, a SiO 2 film 17 is attached on the surface, and a photolithography
A groove having a width of 500 μm parallel to the [11-20] direction was formed on the five-layer nitride crystal by dry etching using SiCl 4.
Are formed every 500 μm. When this wafer was put in the crystal growth furnace again and the AlGaN layer 19 was grown to a thickness of 5 μm, a pair of Fabry-Perot reflecting surfaces 20 having good parallelism were formed on the side surfaces of the groove. When this wafer was cut out at a width of 400 μm at right angles to the reflecting surface and excited by ultraviolet rays having a wavelength of 442 μm, laser oscillation of blue light having a wavelength of 480 nm was exhibited. In this embodiment, the groove direction is [11-
Although an example is shown in the [20] direction, the [1-100] direction may be used, or a crystal plane between these two surfaces may be used.

【０００８】[0008]

【発明の効果】本発明によれば、ウルツ鉱型の結晶構造
を有するAlGaInN系結晶において、従来形成困難であっ
たファブリ・ペロー・キャビテイを形成することが出来
る。According to the present invention, it is possible to form Fabry-Perot cavities, which have been difficult to form conventionally, in an AlGaInN type crystal having a wurtzite type crystal structure.

【図面の簡単な説明】[Brief description of drawings]

【図１】AlGaInN系エピタキシャル結晶による光導波構
造の断面図。FIG. 1 is a sectional view of an optical waveguide structure made of an AlGaInN-based epitaxial crystal.

【符号の説明】 11…(0001)サファイア基板結晶、12…GaN層、13…AlGaN
層、14…GaInN層、15…AlGaN層、16…GaN層、17…SiO2
膜、18…溝、19…AlGaN層。[Explanation of symbols] 11 ... (0001) sapphire substrate crystal, 12 ... GaN layer, 13 ... AlGaN
Layer, 14 ... GaInN layer, 15 ... AlGaN layer, 16 ... GaN layer, 17 ... SiO 2
Membrane, 18 ... Groove, 19 ... AlGaN layer.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 大歳 創 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoru Otoshi 1-280 Higashi Koikekubo, Kokubunji City, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】AlGaInN系窒化物結晶の(0001)エピタキシ
ャル結晶層の表面を保護膜で保護し、ついで該(0001)面
と直角に交わる相対する結晶面を露出形成し、しかるの
ちに該露出結晶面上にAlGaInN系の結晶を成長し、最後
に上記保護膜を取り去ることを特徴とする半導体発光素
子の製造方法。1. A surface of a (0001) epitaxial crystal layer of an AlGaInN-based nitride crystal is protected by a protective film, and then an opposite crystal plane intersecting with the (0001) plane at a right angle is exposed and formed. A method for manufacturing a semiconductor light emitting device, which comprises growing an AlGaInN-based crystal on a crystal plane and finally removing the protective film.
JP3944394A 1994-03-10 1994-03-10 Manufacture of semiconductor light-emitting element Pending JPH07249830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3944394A JPH07249830A (en) 1994-03-10 1994-03-10 Manufacture of semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3944394A JPH07249830A (en) 1994-03-10 1994-03-10 Manufacture of semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPH07249830A true JPH07249830A (en) 1995-09-26

Family

ID=12553169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3944394A Pending JPH07249830A (en) 1994-03-10 1994-03-10 Manufacture of semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPH07249830A (en)

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WO2001048798A1 (en) * 1999-12-24 2001-07-05 Toyoda Gosei Co., Ltd. Method for producing group iii nitride compound semiconductor and group iii nitride compound semiconductor device
WO2001048799A1 (en) * 1999-12-24 2001-07-05 Toyoda Gosei Co., Ltd. Method for producing group iii nitride compound semiconductor and group iii nitride compound semiconductor device
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
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US6835966B2 (en) 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
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